CN117228720A - Preparation method of ceramic material, application of ceramic material as wave absorber and wave absorbing material - Google Patents
Preparation method of ceramic material, application of ceramic material as wave absorber and wave absorbing material Download PDFInfo
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- CN117228720A CN117228720A CN202311167643.0A CN202311167643A CN117228720A CN 117228720 A CN117228720 A CN 117228720A CN 202311167643 A CN202311167643 A CN 202311167643A CN 117228720 A CN117228720 A CN 117228720A
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 58
- 239000011358 absorbing material Substances 0.000 title claims abstract description 53
- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000000126 substance Substances 0.000 claims abstract description 18
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 10
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 10
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
- 238000005245 sintering Methods 0.000 claims description 44
- 238000002156 mixing Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- 239000012188 paraffin wax Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
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- 238000009413 insulation Methods 0.000 claims description 2
- 238000000498 ball milling Methods 0.000 description 26
- 239000000463 material Substances 0.000 description 20
- 239000011812 mixed powder Substances 0.000 description 16
- 239000011651 chromium Substances 0.000 description 14
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 229910010413 TiO 2 Inorganic materials 0.000 description 10
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 10
- 238000001816 cooling Methods 0.000 description 10
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 10
- 239000011268 mixed slurry Substances 0.000 description 10
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- 239000010936 titanium Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 description 6
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
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- 230000005291 magnetic effect Effects 0.000 description 5
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- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- SICLLPHPVFCNTJ-UHFFFAOYSA-N 1,1,1',1'-tetramethyl-3,3'-spirobi[2h-indene]-5,5'-diol Chemical compound C12=CC(O)=CC=C2C(C)(C)CC11C2=CC(O)=CC=C2C(C)(C)C1 SICLLPHPVFCNTJ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910000023 beryllium carbonate Inorganic materials 0.000 description 2
- ZBUQRSWEONVBES-UHFFFAOYSA-L beryllium carbonate Chemical compound [Be+2].[O-]C([O-])=O ZBUQRSWEONVBES-UHFFFAOYSA-L 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
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- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000002122 magnetic nanoparticle Substances 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical group [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005350 ferromagnetic resonance Effects 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000036314 physical performance Effects 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002910 solid waste Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000003911 water pollution Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/006—Compounds containing, besides molybdenum, two or more other elements, with the exception of oxygen or hydrogen
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The application relates to the technical field of wave-absorbing materials, in particular to a preparation method of a ceramic material, application of the ceramic material as a wave-absorbing agent and the wave-absorbing material. Application of ceramic material as wave absorber, wherein the chemical formula of the ceramic material is M 2 XYO 6 Wherein M is Be, mg, ca, sr or Ba, X is Ti, zr or Hf, and Y is Cr, mo or W. The ceramic material with a specific structure is used as the wave absorber, so that the wave absorbing performance of the wave absorber can be improved, the process is simple, and the cost is low.
Description
The application relates to a wave absorber with the application date of 2022, 10 months and 10 days, the application number of 2022112356257 and the patent name of the wave absorber, a preparation method thereof, a wave absorbing material and a divisional application of stealth equipment.
Technical Field
The application relates to the technical field of wave-absorbing materials, in particular to a preparation method of a ceramic material, application of the ceramic material as a wave-absorbing agent and the wave-absorbing material.
Background
The radar wave-absorbing material can effectively reduce the radar scattering cross section area of a target object, so that the radar detection precision is reduced, and the survivability and the sudden prevention capability of weapon equipment are improved. Simultaneously, with the rapid development of modern electronic communication technology, electromagnetic pollution has become a fifth pollution source after air pollution, noise pollution, water pollution and solid waste pollution, and constitutes serious threat to human life and health. The electromagnetic wave absorption effect of the wave absorbing material can effectively reduce the pollution and prevent secondary pollution caused by electromagnetic shielding effect.
The wave-absorbing material can be generally classified into a dielectric loss material and a magnetic loss material. Dielectric loss materials primarily consume incident electromagnetic waves by means of electron polarization, dipole polarization, space charge polarization, drain conduction loss, and the like. The magnetic loss material mainly loses incident electromagnetic waves through hysteresis loss, eddy current loss, ferromagnetic resonance, dimensional resonance, domain wall resonance, natural resonance and the like. The magnetic loss material has the defects of low Curie temperature, high density and the like, so that the practical application is limited. Dielectric materials are popular among researchers because of their wide variety and diverse properties and a wide range of selectivity as a wave-absorbing material.
The development of low-dimension and structuring is an effective means of improving the wave-absorbing performance of dielectric loss materials or magnetic loss materials. The traditional wave-absorbing material has poor wave-absorbing performance when the thickness of the material is smaller due to the limitation of physical performance. In addition, the low-dimensional wave-absorbing material prepared by the traditional acid solution etching, chemical vapor deposition and sol-gel method has the defects of complicated preparation process, economy, environmental protection and the like, and is not beneficial to mass production.
Disclosure of Invention
Based on this, it is necessary to provide a method for producing a ceramic material, which can improve the wave absorbing performance and is simple in process and low in cost, and an application as a wave absorbing agent and a wave absorbing material.
In a first aspect, the present application provides the use of a ceramic material having the formula M as a wave absorber 2 XYO 6 Wherein M is selected from Be, mg, ca, sr or Ba, XSelected from Ti, zr or Hf, and the Y element is selected from Cr, mo or W.
In one embodiment, the ceramic material is Sr 2 TiMoO 6 、Sr 2 ZrMoO 6 、Sr 2 TiCrO 6 、Ba 2 HfCrO 6 、Mg 2 TiCrO 6 、Ca 2 ZrMoO 6 、Be 2 HfWO 6 Or Sr 2 TiWO 6 。
In one embodiment, the ceramic material is powder, and the particle size of the ceramic material is 0.01-10 μm.
In a second aspect, the present application provides a method for preparing a ceramic material having the chemical formula M 2 XYO 6 Wherein M is Be, mg, ca, sr or Ba, X is Ti, zr or Hf, and Y is Cr, mo or W; the method comprises the following steps:
mixing M source, X source and Y source, and mixing the mixture with O 2 After sintering in a first atmosphere, then in the presence of H 2 Performing secondary sintering in a second atmosphere of (2);
wherein the M source, the X source and the Y source are respectively selected from carbonates and/or oxides containing M element, oxides containing X element and oxides containing Y element.
In one embodiment, the method of preparation meets at least one of the following characteristics:
1) The temperature of the primary sintering and the secondary sintering are respectively and independently 800-1000 ℃, the time is respectively and independently 8-12 h, and the heating rate is respectively and independently 3-5 ℃/min;
2) The second atmosphere further comprises Ar or N 2 。
In a third aspect, the present application provides a wave absorbing material, including a wave transmitting agent and a wave absorbing agent, wherein the wave absorbing agent is a ceramic material, and the chemical formula of the ceramic material is M 2 XYO 6 Wherein M is Be, mg, ca, sr or Ba, X is Ti, zr or Hf, and Y is Cr, mo or W.
In one embodiment, the wave-absorbing material meets at least one of the following characteristics:
(1) The wave-absorbing material is a wave-absorbing film or a wave-absorbing coating, and the thickness of the wave-absorbing material is 0.5 mm-2 mm;
(2) The wave-transparent agent comprises one or more of resin, paraffin and electric insulation oxide.
In one embodiment, the thickness of the wave absorbing material is 1 mm-1.5 mm.
In one embodiment, the wave absorbing frequency of the wave absorbing material is 1 GHz-18 GHz, and the reflection loss is-1 dB to-16 dB.
In a fourth aspect, the present application provides a stealth device, including a device body and a wave-absorbing material layer formed on a surface of the device body, where a material of the wave-absorbing material layer includes the wave-absorbing material of the third aspect.
In the application of the ceramic material serving as the wave absorber, the ceramic material with a specific structure has the characteristic of high electromagnetic loss when being applied as the wave absorber, and can be used in the field of electromagnetic stealth. The wave-absorbing material prepared by the method has wide wave-absorbing bandwidth and low reflection loss, for example, when the thickness of the wave-absorbing material is only 0.8-1.2 mm, the effective wave-absorbing bandwidth with the reflection loss value smaller than-10 dB can reach at least 3.3GHz, and the whole X wave band can be covered.
The preparation method of the ceramic material provided by the application is simple, and the ceramic material with the wave absorbing performance can be formed by only two times of sintering without processing and designing of special morphology. Compared with the traditional method for preparing special microcosmic morphology by an acid solution etching method, chemical vapor deposition or sol-gel method, the method provided by the application does not involve chemical synthesis, has no pollution reaction product, and is more environment-friendly. In addition, compared with the traditional mode that special microcosmic appearance is needed to be prepared to have better wave absorbing performance, such as SiC nanowires, magnetic nanoparticle modified multiwall carbon nanotubes and nano hollow structures (Zn) x Fe 3-x O 4 ) C coats ZnO nano-wires and the like, and when the ceramic material provided by the application is applied as a wave absorber, special morphology is not required, so that the processing convenience and the economy are improved.
In addition, the wave-absorbing material provided by the application has the advantages of good wave-absorbing performance, thin thickness, simple process and strong controllability, and is suitable for industrialized and large-scale production.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 shows Sr produced in example 1 of the present application 2 TiMoO 6 An XRD pattern of (b);
FIG. 2 shows Sr produced in example 1 of the present application 2 TiMoO 6 SEM images of (a);
FIG. 3 shows Sr produced in example 1 of the present application 2 TiMoO 6 Distribution diagram of Sr element in the steel;
FIG. 4 shows Sr produced in example 1 of the present application 2 TiMoO 6 Distribution diagram of Ti element in the steel;
FIG. 5 shows Sr produced in example 1 of the present application 2 TiMoO 6 Distribution diagram of the element Mo;
FIG. 6 shows Sr produced in example 1 of the present application 2 TiMoO 6 Distribution diagram of the element O;
FIG. 7 shows Sr produced in example 1 of the present application 2 TiMoO 6 Reflection loss performance diagram in the bandwidth range of 1 GHz-18 GHz.
Detailed Description
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items. In the description herein, the meaning of "plurality" is at least two, such as two, three, etc., unless specifically defined otherwise. The terms "comprising," "including," "having," "containing," or any other variation thereof, as used herein, are intended to cover a non-exclusive inclusion. For example, a composition, step, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, step, method, article, or apparatus.
Except where shown or otherwise indicated in the operating examples, all numbers expressing quantities of ingredients, physical and chemical properties, and so forth, used in the specification and claims are to be understood as being modified in all instances by the term "about". For example, therefore, unless indicated to the contrary, the numerical parameters set forth in the foregoing specification and attached claims are approximations that can be varied appropriately by those skilled in the art utilizing the teachings disclosed herein seeking to obtain the desired properties. The use of numerical ranges by endpoints includes all numbers subsumed within that range and any range within that range, e.g., 1 to 5 includes 1, 1.1, 1.3, 1.5, 2, 2.75, 3, 3.80, 4, 5, and the like.
In this context, "preferred" is merely to describe embodiments or examples that are more effective, and it should be understood that they are not intended to limit the scope of the application.
Herein, "optional" refers to the presence or absence of the possibility, i.e., to any one of the two juxtaposed schemes selected from "with" or "without". If multiple "alternatives" occur in a technical solution, if no particular description exists and there is no contradiction or mutual constraint, then each "alternative" is independent.
Herein, the terms "first," "second," "third," "fourth," and the like are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or quantity, nor as implying an importance or quantity of a technical feature being indicated. Moreover, the terms "first," "second," "third," "fourth," and the like are used for non-exhaustive list description purposes only, and are not to be construed as limiting the number of closed forms.
The temperature parameter herein is not particularly limited, and may be a constant temperature process or may vary within a certain temperature range. It should be appreciated that the constant temperature process described allows the temperature to fluctuate within the accuracy of the instrument control. For example, it is allowed to fluctuate within a range such as + -5 ℃, + -4 ℃, + -3 ℃, + -2 ℃, + -1 ℃.
Aiming at the defects that the preparation method is complex, the cost is high, the method is not suitable for mass production and large-scale application and the like in the prior art of the high-performance radar wave-absorbing material, the application provides the ceramic material which is simple in preparation method, low in cost, strong in synthesis controllability, good in powder wave-absorbing performance, and suitable for mass production and large-scale application and used as the wave-absorbing agent. The ceramic material with a specific structure has conductivity and excellent wave absorbing performance when being used as a wave absorbing agent, and can be used in the field of electromagnetic stealth. It has a wide wave-absorbing bandwidth and low reflection loss, for example, when the thickness of the wave-absorbing material is only 0.8-1.2 mm, the effective wave-absorbing bandwidth with the reflection loss value smaller than-10 dB can reach at least 3.3GHz, and the whole X wave band (8.2 GHz-12.4 GHz) can be covered.
In a first aspect, the present application provides the use of a ceramic material having the formula M as a wave absorber 2 XYO 6 Wherein M is selected from beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr) or barium (Ba), X is selected from titanium (Ti), zirconium (Zr) or hafnium (Hf), and Y is selected from chromium (Cr), molybdenum (Mo) or tungsten (W).
In the application of the ceramic material serving as the wave absorber, the ceramic material with a specific structure has the characteristic of high electromagnetic loss when being applied as the wave absorber, and can be used in the field of electromagnetic stealth. The wave-absorbing material prepared by the method has wide wave-absorbing bandwidth and low reflection loss, for example, when the thickness of the wave-absorbing material is only 0.8-1.2 mm, the effective wave-absorbing bandwidth with the reflection loss value smaller than-10 dB can reach at least 3.3GHz, and the whole X wave band can be covered.
In some embodiments, the ceramic material has the formula Sr 2 TiMoO 6 、Sr 2 ZrMoO 6 、Sr 2 TiCrO 6 、Ba 2 HfCrO 6 、Mg 2 TiCrO 6 、Ca 2 ZrMoO 6 、Be 2 HfWO 6 、Sr 2 TiWO 6 Etc. Preferably, the wave absorber has the chemical formula Sr 2 TiMoO 6 。
In some embodiments, the ceramic material is a powder, and the particle size of the ceramic material may be any value between 0.01 μm and 10 μm, for example, may be 0.05 μm, 0.08 μm, 0.1 μm, 0.5 μm, 0.2 μm, 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm.
In a second aspect, the present application provides a method for preparing a ceramic material having the chemical formula M 2 XYO 6 Wherein M is Be, mg, ca, sr or Ba, X is Ti, zr or Hf, and Y is Cr, mo or W; the method comprises the following steps:
mixing M source, X source and Y source, and mixing the mixture with O 2 After sintering in a first atmosphere, then in the presence of H 2 Performing secondary sintering in a second atmosphere of (2);
wherein the M source, the X source and the Y source are respectively selected from carbonates and/or oxides containing M element, oxides containing X element and oxides containing Y element.
The preparation method of the ceramic material provided by the application is simple, and the ceramic material with the wave absorbing performance can be formed only by two times of sintering, and special shape processing and design are not needed. Compared with the traditional method for preparing special microcosmic morphology by acid solution etching method, chemical vapor deposition or sol-gel, the method provided by the application does not involve chemical synthesisThe method has no pollution reaction products and is more environment-friendly. In addition, compared with the traditional mode that special microcosmic appearance is needed to be prepared to have better wave absorbing performance, such as SiC nanowires, magnetic nanoparticle modified multiwall carbon nanotubes and nano hollow structures (Zn) x Fe 3-x O 4 ) C coats ZnO nano-wires and the like, and when the ceramic material provided by the application is applied as a wave absorber, special morphology is not required, so that the processing convenience and the economy are improved.
In some embodiments, the M-containing carbonate includes, but is not limited to, strontium carbonate (SrCO) 3 ) Barium carbonate (BaCO) 3 ) Calcium carbonate (CaCO) 3 ) Magnesium carbonate (MgCO) 3 ) Beryllium carbonate (BeCO) 3 ) One or more of the following; the M-containing oxide includes, but is not limited to, one or more of strontium oxide (SrO), barium oxide (BaO), calcium oxide (CaO), magnesium oxide (MgO), and beryllium oxide (BeO).
In some embodiments, the oxide containing the X element may be specifically titanium oxide (TiO 2 ) Zirconium oxide (ZrO) 2 ) Hafnium oxide (HfO) 2 ) One or more of the following.
In some embodiments, the oxides containing the Y element include, but are not limited to, chromium oxide (Cr 2 O 3 ) Molybdenum oxide (MoO) 3 ) Tungsten oxide (WO) 3 ) One or more of the following.
In some embodiments, the process parameters of the primary sintering and the secondary sintering are not limited, and the process parameters commonly used in the art may be selected. As an exemplary illustration, the temperature of the primary sintering may be 800 ℃ to 1000 ℃, the time may be 8 hours to 12 hours, and the temperature rising rate may be 3 ℃/min to 5 ℃/min. The temperature of the secondary sintering can be 800-1000 ℃, the time can be 8-12 h, and the heating rate can be 3-5 ℃/min. It will be appreciated that the process parameters for the primary and secondary sintering may be the same or different.
In some embodiments, the composition contains O 2 The first atmosphere of (2) may be in particular an air atmosphere and/or an oxygen atmosphere, containing H 2 The second atmosphere of (2) may be H 2 And Ar, or H 2 And N 2 Is a mixed gas atmosphere of (a).
In some embodiments, the method for preparing a ceramic material may specifically include the steps of:
step S1: according to the chemical formula M 2 XYO 6 And respectively weighing an M source, an X source and a Y source, and mixing to prepare mixed powder.
It will be appreciated that the specific manner of mixing is not limited, and mixing techniques and parameters commonly used in the art may be selected so as to be capable of uniform mixing. For example, the mixing may be performed using a planetary ball milling process.
Step S2: mixing the powder prepared in the step S1 in the presence of O 2 Is subjected to primary sintering under a first atmosphere.
Step S3: the product obtained in the step S2 is added with H 2 And (3) carrying out secondary sintering under a second atmosphere.
In a third aspect, the present application provides a wave absorbing material, including a wave transmitting agent and a wave absorbing agent, wherein the wave absorbing agent is a ceramic material, and the chemical formula of the ceramic material is M 2 XYO 6 Wherein M is Be, mg, ca, sr or Ba, X is Ti, zr or Hf, and Y is Cr, mo or W.
The wave-absorbing material provided by the application has the advantages of good wave-absorbing performance, thin thickness, simple process and strong controllability, and is suitable for industrialized and large-scale production. When the thickness of the wave-absorbing material is only 0.8-1.2 mm, the effective wave-absorbing bandwidth with the reflection loss value smaller than-10 dB reaches at least 3.3GHz, and the whole X wave band can be covered.
It will be appreciated that the wave-absorbing material may in particular be a wave-absorbing film or a wave-absorbing coating. Further, the thickness of the wave-absorbing material may be any value between 0.5mm and 2mm, for example, 1mm, 1.2mm, 1.5mm, 1.8mm may also be used. Preferably, the thickness of the wave-absorbing material may be any value between 1mm and 1.5mm.
In some embodiments, the wave-transparent agent may be any known wave-transparent agent commonly used in the art, for example, the wave-transparent agent may be a resin, paraffin, or an electrically insulating oxide. Wherein the resin can be phenol resin, polystyrene, polytetrafluoroethylene, etc., and the electrically insulating oxide can beIs Al 2 O 3 、SiO 2 Mullite, cordierite, and the like.
In some embodiments, the weight ratio of wave-transparent agent to wave-absorbing agent may be 1:1 to 1:4.
In some embodiments, the wave-absorbing material may have a wave-absorbing frequency in any range between 1GHz and 18GHz, for example, 2GHz-4 GHz, 4GHz-8 GHz, 8GHz-12 GHz, and 12GHz-18 GHz, and the reflection loss may be at least any value between-1 dB and-16 dB.
In a fourth aspect, the present application provides a stealth device, which includes a device body and a wave-absorbing material layer formed on a surface of the device body, where a material of the wave-absorbing material layer includes the wave-absorbing material.
In some embodiments, the cloaking device may specifically be a device that utilizes magnetic cloaking technology, e.g., may be an aircraft, a wearable device, etc.
The present application will be described in further detail with reference to specific examples.
Example 1
1. Preparation of wave-absorbing agent
In this embodiment, srCO 3 、TiO 2 And MoO 3 The chemical formula of the wave absorber is Sr 2 TiMoO 6 . The wave absorber is prepared by the following steps:
(1) 14.763g SrCO is weighed 3 、3.993g TiO 2 And 7.197g MoO 3 And uniformly mixing by adopting a planetary ball milling process to prepare mixed slurry. Wherein the solvent adopted in the ball milling is absolute ethyl alcohol, and the ball milling medium is ZrO 2 The ball milling rotating speed is 500rpm, the ball milling time is 10 hours, and the feed-liquid ratio is 1:4;
(2) Placing the mixed slurry prepared in the step (1) into a constant temperature drying oven at 70 ℃ for 10 hours to remove absolute ethyl alcohol, obtaining mixed powder, and sieving the obtained mixed powder with a 200-mesh sieve;
(3) And (3) sintering the mixed powder obtained in the step (2) for 10 hours at 900 ℃ in an air atmosphere to finish primary sintering, thereby obtaining a sintered material. Wherein the heating and cooling rates are all 5 ℃/min;
(4) Sintering the sintering material in the step (3) in a tubular furnace at 1000 ℃ for 10 hours under a weak reducing atmosphere to finish secondary sintering to prepare Sr 2 TiMoO 6 Wave absorbing agent. Wherein the weak reducing atmosphere is formed by mixing 5% of hydrogen and 95% of argon, the tube furnace is always kept in a positive pressure state in the reaction, the gas flow is more than 0.1mL/min, and the heating and cooling speeds are 5 ℃/min.
Sr produced in this example 2 TiMoO 6 The XRD pattern of (2) is shown in figure 1, the morphology pattern is shown in figure 2, and the distribution of Sr element, ti element, mo element and O element in the wave absorber is shown in figures 3-6 respectively. From this, it can be seen that this example produced a compound of the formula Sr 2 TiMoO 6 Is a wave absorber of (a).
2. Preparation of wave-absorbing material and test of wave-absorbing performance
The wave absorber Sr is mixed with 2 TiMoO 6 Mixing with paraffin according to a mass ratio of 4:1, and adopting uniaxial compression to prepare the concentric ring with a hollow diameter of 3.04mm, an outer ring diameter of 7mm and a section thickness of 2 mm. And carrying out electromagnetic parameter test on the coaxial ring by adopting a vector network analyzer, thereby obtaining the reflection loss performance of the wave-absorbing material. Wherein the uniaxial compression pressure is 2MPa, the electromagnetic parameter test adopts a sweep frequency model, the test wavelength range is 1 GHz-18 GHz, and the step length is 0.01GHz.
The radar reflection loss performance of the coaxial ring in the range of 1 GHz-18 GHz is shown in FIG. 7. As can be seen from FIG. 7, the effective absorption bandwidth covers the whole X-band (8.2 GHz-12.4 GHz), and the reflection loss value is smaller than-5 dB, and the bandwidth is 6GHz, which shows that the absorber has excellent absorption performance.
Example 2
The method for producing the wave-absorbing agent of example 2 is substantially the same as the method for producing the wave-absorbing agent of example 1, except that: replacement of SrCO with SrO 3 The method comprises the steps of carrying out a first treatment on the surface of the The method comprises the following specific steps:
in this embodiment, srO and TiO 2 And MoO 3 The chemical formula of the wave absorber is Sr 2 TiMoO 6 . Step tool for preparing wave absorbing agentThe body is as follows:
(1) 10.362g SrO and 3.993g TiO are weighed 2 And 7.197g MoO 3 And uniformly mixing by adopting a planetary ball milling process to prepare mixed slurry. Wherein the solvent adopted in the ball milling is absolute ethyl alcohol, and the ball milling medium is ZrO 2 The ball milling rotating speed is 500rpm, the ball milling time is 10 hours, and the feed-liquid ratio is 1:4;
(2) Placing the mixed slurry prepared in the step (1) into a constant temperature drying oven at 70 ℃ for 10 hours to remove absolute ethyl alcohol, obtaining mixed powder, and sieving the obtained mixed powder with a 200-mesh sieve;
(3) And (3) sintering the mixed powder obtained in the step (2) for 10 hours at 900 ℃ in an air atmosphere to finish primary sintering, thereby obtaining a sintered material. Wherein the heating and cooling rates are all 5 ℃/min;
(4) Sintering the sintering material in the step (3) in a tubular furnace at 1000 ℃ for 10 hours under a weak reducing atmosphere to finish secondary sintering to prepare Sr 2 TiMoO 6 Wave absorbing agent. Wherein the weak reducing atmosphere is formed by mixing 5% of hydrogen and 95% of argon, the tube furnace is always kept in a positive pressure state in the reaction, the gas flow is more than 0.1mL/min, and the heating and cooling speeds are 5 ℃/min.
Example 3
The method for producing the wave-absorbing agent of example 3 is substantially the same as the method for producing the wave-absorbing agent of example 1, except that: zrO (ZrO) 2 Replacement of TiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The method comprises the following specific steps:
in this embodiment, srCO 3 、ZrO 2 And MoO 3 The chemical formula of the wave absorber is Sr 2 ZrMoO 6 . The wave absorber is prepared by the following steps:
(1) 14.763g SrCO is weighed 3 、6.161g ZrO 2 And 7.197g MoO 3 And uniformly mixing by adopting a planetary ball milling process to prepare mixed slurry. Wherein the solvent adopted in the ball milling is absolute ethyl alcohol, and the ball milling medium is ZrO 2 The ball milling rotating speed is 500rpm, the ball milling time is 10 hours, and the feed-liquid ratio is 1:4;
(2) Placing the mixed slurry prepared in the step (1) into a constant temperature drying oven at 70 ℃ for 10 hours to remove absolute ethyl alcohol, obtaining mixed powder, and sieving the obtained mixed powder with a 200-mesh sieve;
(3) And (3) sintering the mixed powder obtained in the step (2) for 10 hours at 900 ℃ in an air atmosphere to finish primary sintering, thereby obtaining a sintered material. Wherein the heating and cooling rates are all 5 ℃/min;
(4) Sintering the sintering material in the step (3) in a tubular furnace at 1000 ℃ for 10 hours under a weak reducing atmosphere to finish secondary sintering to obtain Sr 2 ZrMoO 6 Wave absorbing agent. Wherein the weak reducing atmosphere is formed by mixing 5% of hydrogen and 95% of argon, the tube furnace is always kept in a positive pressure state in the reaction, the gas flow is more than 0.1mL/min, and the heating and cooling speeds are 5 ℃/min.
Example 4
The method for producing the wave-absorbing agent of example 4 is substantially the same as the method for producing the wave-absorbing agent of example 1, except that: cr is added to 2 O 3 Replacement of MoO 3 The method comprises the steps of carrying out a first treatment on the surface of the The method comprises the following specific steps:
in this embodiment, srCO 3 、TiO 2 And Cr (V) 2 O 3 The chemical formula of the wave absorber is Sr 2 TiCrO 6 . The wave absorber is prepared by the following steps:
(1) 14.763g SrCO is weighed 3 、3.993g TiO 2 And 3.8g Cr 2 O 3 And uniformly mixing by adopting a planetary ball milling process to prepare mixed slurry. Wherein the solvent adopted in the ball milling is absolute ethyl alcohol, and the ball milling medium is ZrO 2 The ball milling rotating speed is 500rpm, the ball milling time is 10 hours, and the feed-liquid ratio is 1:4;
(2) Placing the mixed slurry prepared in the step (1) into a constant temperature drying oven at 70 ℃ for 10 hours to remove absolute ethyl alcohol, obtaining mixed powder, and sieving the obtained mixed powder with a 200-mesh sieve;
(3) And (3) sintering the mixed powder obtained in the step (2) for 10 hours at 900 ℃ in an air atmosphere to finish primary sintering, thereby obtaining a sintered material. Wherein the heating and cooling rates are all 5 ℃/min;
(4)sintering the sintering material in the step (3) in a tubular furnace at 1000 ℃ for 10 hours under a weak reducing atmosphere to finish secondary sintering to obtain Sr 2 TiCrO 6 Wave absorbing agent. Wherein the weak reducing atmosphere is formed by mixing 5% of hydrogen and 95% of argon, the tube furnace is always kept in a positive pressure state in the reaction, the gas flow is more than 0.1mL/min, and the heating and cooling speeds are 5 ℃/min.
Example 5
The method for producing the wave-absorbing agent of example 5 is substantially the same as the method for producing the wave-absorbing agent of example 1, except that: baCO is carried out 3 Replacement of SrCO 3 ，HfO 2 Replacement of TiO 2 ，Cr 2 O 3 Replacement of MoO 3 The method comprises the steps of carrying out a first treatment on the surface of the The method comprises the following specific steps:
the embodiment uses BaCO 3 、HfO 2 And Cr (V) 2 O 3 The wave absorber is used as raw material and has a chemical formula of Ba 2 HfCrO 6 . The wave absorber is prepared by the following steps:
(1) 19.73g of BaCO was weighed 3 、10.525g HfO 2 And 3.8g Cr 2 O 3 And uniformly mixing by adopting a planetary ball milling process to prepare mixed slurry. Wherein the solvent adopted in the ball milling is absolute ethyl alcohol, and the ball milling medium is ZrO 2 The ball milling rotating speed is 500rpm, the ball milling time is 10 hours, and the feed-liquid ratio is 1:4;
(2) Placing the mixed slurry prepared in the step (1) into a constant temperature drying oven at 70 ℃ for 10 hours to remove absolute ethyl alcohol, obtaining mixed powder, and sieving the obtained mixed powder with a 200-mesh sieve;
(3) And (3) sintering the mixed powder obtained in the step (2) for 10 hours at 900 ℃ in an air atmosphere to finish primary sintering, thereby obtaining a sintered material. Wherein the heating and cooling rates are all 5 ℃/min;
(4) Sintering the sintering material in the step (3) in a tubular furnace at 1000 ℃ for 10 hours under a weak reducing atmosphere to finish secondary sintering to obtain Ba 2 HfCrO 6 Wave absorbing agent. Wherein, the weak reducing atmosphere is argon, the tube furnace is always kept in a positive pressure state during the reaction, the gas flow is more than 0.1mL/min, the temperature is raised,The cooling rate is 5 ℃/min.
The raw material list in the method for producing the wave-absorbing agent of examples 1 to 5 is as follows in table 1:
TABLE 1
| Group of | M source (g) | X source (g) | Y source (g) | Chemical formula of wave absorber |
| Example 1 | 14.763g SrCO 3 | 3.993g TiO 2 | 7.197g MoO 3 | Sr 2 TiMoO 6 |
| Example 2 | 10.362g SrO | 3.9935g TiO 2 | 7.197g MoO 3 | Sr 2 TiMoO 6 |
| Example 3 | 14.763g SrCO 3 | 6.161g g ZrO 2 | 7.197g MoO 3 | Sr 2 ZrMoO 6 |
| Example 4 | 14.763g SrCO 3 | 3.993g TiO 2 | 3.8g Cr 2 O 3 | Sr 2 TiCrO 6 |
| Example 5 | 19.73g BaCO 3 | 10.525g HfO 2 | 3.8g Cr 2 O 3 | Ba 2 HfCrO 6 |
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. The scope of the application is therefore intended to be covered by the appended claims, and the description and drawings should be construed in view of the scope of the appended claims.
Claims (10)
1. The application of ceramic material as wave absorber is characterized by thatThe chemical formula of the ceramic material is M 2 XYO 6 Wherein M is Be, mg, ca, sr or Ba, X is Ti, zr or Hf, and Y is Cr, mo or W.
2. The use according to claim 1, wherein the ceramic material is Sr 2 TiMoO 6 、Sr 2 ZrMoO 6 、Sr 2 TiCrO 6 、Ba 2 HfCrO 6 、Mg 2 TiCrO 6 、Ca 2 ZrMoO 6 、Be 2 HfWO 6 Or Sr 2 TiWO 6 。
3. The use according to claim 1 or 2, wherein the ceramic material is a powder, the particle size of the ceramic material being 0.01 μm to 10 μm.
4. A preparation method of a ceramic material is characterized in that the chemical formula of the ceramic material is M 2 XYO 6 Wherein M is Be, mg, ca, sr or Ba, X is Ti, zr or Hf, and Y is Cr, mo or W; the method comprises the following steps:
mixing M source, X source and Y source, and mixing the mixture with O 2 After sintering in a first atmosphere, then in the presence of H 2 Performing secondary sintering in a second atmosphere of (2);
wherein the M source, the X source and the Y source are respectively selected from carbonates and/or oxides containing M element, oxides containing X element and oxides containing Y element.
5. The method of manufacturing of claim 4, wherein at least one of the following characteristics is satisfied:
1) The temperature of the primary sintering and the secondary sintering are respectively and independently 800-1000 ℃, the time is respectively and independently 8-12 h, and the heating rate is respectively and independently 3-5 ℃/min;
2) The second atmosphere further comprises Ar or N 2 。
6. A wave absorbing material is characterized by comprising a wave transmitting agent and a wave absorbing agent, wherein the wave absorbing agent is a ceramic material, and the chemical formula of the ceramic material is M 2 XYO 6 Wherein M is Be, mg, ca, sr or Ba, X is Ti, zr or Hf, and Y is Cr, mo or W.
7. The wave absorbing material of claim 6, wherein at least one of the following characteristics is satisfied:
(1) The wave-absorbing material is a wave-absorbing film or a wave-absorbing coating, and the thickness of the wave-absorbing material is 0.5 mm-2 mm;
(2) The wave-transparent agent comprises one or more of resin, paraffin and electric insulation oxide.
8. The wave absorbing material of claim 6, wherein the wave absorbing material has a thickness of 1mm to 1.5mm.
9. The wave-absorbing material of claim 6, wherein the wave-absorbing material has a wave-absorbing frequency of 1 GHz-18 GHz and a reflection loss of-1 dB to-16 dB.
10. A stealth device, comprising a device body and a wave-absorbing material layer formed on the surface of the device body, wherein the wave-absorbing material layer is made of the wave-absorbing material according to any one of claims 6 to 9.
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