CN117202676B - Perovskite solar cell based on three-layer conductive polymer and gate line electrode structure - Google Patents
Perovskite solar cell based on three-layer conductive polymer and gate line electrode structure Download PDFInfo
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- 239000002019 doping agent Substances 0.000 claims description 11
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 9
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention discloses a perovskite solar cell based on a three-layer conductive polymer and a gate line electrode structure, which belongs to the technical field of perovskite cells and comprises a transparent conductive substrate, an electron transmission layer, a perovskite layer, a p-type semi-crystalline polymer layer, a p-type amorphous conductive polymer layer, a low square resistance polymer layer and a gate line electrode structure from bottom to top. The p-type semi-crystalline polymer is used as a hole transport layer material, and p-type amorphous conductive polymer is used for filling tiny holes formed in the crystallization film forming process of the p-type semi-crystalline polymer, so that the outward diffusion and the inward diffusion of water and oxygen of perovskite decomposition products are prevented, and the stability of a perovskite solar cell is enhanced; the electrode contact area is reduced by adopting the grid line electrode structure, the aging of the perovskite solar cell is relieved, and the low square resistance polymer layer effectively reduces the transverse resistance between the low square resistance polymer layer and two adjacent auxiliary grid lines so as to avoid the reduction of the photoelectric conversion efficiency.
Description
Technical Field
The invention belongs to the technical field of perovskite batteries, and particularly relates to a perovskite solar cell based on a three-layer conductive polymer and a grid electrode structure.
Background
Organic-inorganic hybrid perovskiteThe solar cell has the advantages of high photoelectric energy conversion efficiency, simple preparation process and the like, and is a focus of research. Although single perovskite solar cells have achieved 26.1% photoelectric conversion efficiency at present, the top layer electrode of most high performance perovskite solar cells is concentrated on a small area of precious metal. Some laboratories have attempted to increase the area of metal electrodes or to use conductive metal oxides such as ITO (indium tin oxide), FTO (fluorine doped SnO) 2 ) Etc.), the effective working area of the perovskite solar cell is increased, but in the experimental process, the photoelectric energy conversion efficiency and stability of the device are found to be significantly reduced compared with those of the small-area perovskite solar cell. It has been shown that the steam generated by perovskite aging decomposition has a continuous erosion effect on the electrode contact surface, and the performance of the device is obviously attenuated due to the increase of the contact area.
The industrial silicon-based solar cell adopts a grid line electrode structure, carriers are collected by utilizing narrower and more auxiliary grid lines, and wider and less main grid lines are connected with the auxiliary grid lines, so that the serial resistance is not too high in large-area production while the lower shading ratio is ensured, and the energy conversion efficiency of the cell is obviously reduced. The application of the gate line electrode in the perovskite solar cell can theoretically alleviate the aging problem of the device and increase the effective working area.
The hole transport layer materials in perovskite solar cells are currently predominantly amorphous organic semiconductor materials and semi-crystalline polymers. On the one hand, although perovskite solar cells of amorphous organic semiconductor materials, typified by spiro-ome (2, 2', 7' -tetrakis (N, N-di-p-methoxyphenylamine) 9,9' -spirobifluorene), achieve excellent photoelectric conversion efficiency, the amorphous structure of the perovskite solar cells requires doping to improve conductivity because of low conductivity, and the inclusion of lithium salts with high binding energy for water in the dopant can cause the devices to be very susceptible to humidity. Although semi-crystalline polymers avoid the hygroscopic nature of lithium salts, they tend to cause damage to the perovskite by permeation of upper materials (e.g., lewis acids, etc.) and solvents (e.g., deionized water, etc.) through the pores, and also by permeation of vapors from aging decomposition of the perovskite through the micro pores, due to the micro pores that form during crystallization to form the film. On the other hand, the conductivity of the two hole transport materials is low, and the direct contact with the gate line electrode can cause the transverse resistance of the hole transport materials between the auxiliary gate lines and the gate lines to be increased, so that the collection of carriers is affected.
Therefore, for perovskite solar cells using semi-crystalline polymers as hole transport layer materials, how to solve the problem of semi-crystalline polymer holes and the problem of large lateral resistance is a core difficulty in preparing perovskite solar cells with stable gate line electrode structures.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a perovskite solar cell based on a three-layer conductive polymer and a grid line electrode structure, which adopts the grid line electrode structure to effectively reduce the electrode contact area, combines the three-layer conductive polymer to avoid the problem of holes of a semi-crystalline polymer and the problem of large transverse resistance, relieves the aging of the perovskite solar cell and improves the photoelectric energy conversion efficiency and stability.
The technical scheme adopted by the invention is as follows:
the perovskite solar cell based on the three-layer conductive polymer and the gate line electrode structure comprises a transparent conductive substrate, an electron transmission layer, a perovskite layer, a p-type semi-crystalline polymer layer, a p-type amorphous conductive polymer layer, a low square resistance polymer layer and a gate line electrode structure from bottom to top.
Further, the P-type semi-crystalline polymer layer is made of PDCBT, P3HT, PBDB-T, PFBDB-T, PBDB-T-2F, PBDBT-2Cl, P (Cl 4) BDB-T, PBDBT-T-SF, J52-2F or J52-Cl.
Further, the material of the p-type amorphous conductive polymer layer is doped PTAA (poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ]) or doped spiro-OMeTAD; wherein the dopants of PTAA and spiro-OMeTAD are alcohol-soluble organic Lewis acid, and are specifically BCF, BTolF, C-BCF, li-BCF, N-BCF or I-BCF.
Further, the mass ratio of PTAA to the dopant is (5-30): 1, a step of; the mass ratio of the spiro-OMeTAD to the dopant is (3-20): 1.
further, the low sheet resistance polymer layer is made of an organic conductive material with sheet resistance of 10-100 ohm/sq.
Further, the material of the low sheet resistance polymer layer is specifically PEDOT: PSS.
Further, the electron transport layer is made of an n-type semiconductor material with good conductivity, specifically SnO 2 、TiO 2 One or more of ZnO, C60, PCBM and ICBA.
Further, the transparent conductive substrate is transparent conductive glass, specifically FTO or ITO.
Further, the material of the gate line electrode structure is Au, ag, pt, cu or carbon.
Further, the gate line electrode structure includes at least one main gate line, and a plurality of sub gate lines symmetrically disposed at both sides of the main gate line and having one ends connected to the corresponding main gate line.
Further, the average thickness of the main grid line is 5-15 mu m, and the line width is 200-500 mu m; the average thickness of the auxiliary grid lines is 2-5 mu m, the line width is 50-130 mu m, and the distance between the adjacent auxiliary grid lines is 0.1-0.5 cm.
The beneficial effects of the invention are as follows:
1. according to the perovskite solar cell based on the three-layer conductive polymer and the grid electrode structure, on one hand, the p-type semi-crystalline polymer is used as a hole transport layer material, so that the problem of poor stability caused by a doping agent is avoided, and the p-type amorphous conductive polymer is used for filling tiny holes formed in the crystallization film forming process of the p-type semi-crystalline polymer, so that the outward diffusion of perovskite decomposition products and the inward diffusion of water and oxygen are effectively prevented, and the stability of the perovskite solar cell is enhanced; on the other hand, the electrode contact area is effectively reduced by adopting a grid line electrode structure, the aging of the perovskite solar cell is relieved, and the problem of high transverse resistance of the p-type semi-crystalline polymer and the p-type amorphous conductive polymer is solved by arranging the low square resistance polymer layer, so that the transverse resistance between the low square resistance polymer layer and two adjacent auxiliary grid lines is reduced, and further the reduction of photoelectric conversion efficiency caused by overhigh series resistance is reduced;
2. the preparation process is simple, and other structures except the grid line electrode structure can be prepared by a solution spin-coating method;
3. the invention adopts the grid line electrode structure as the electrode layer, reduces the metal consumption compared with the metal electrode with the same area, reduces the cost and has commercial application value; more importantly, the grid line electrode structure can realize double-sided power generation of the perovskite solar cell, and is beneficial to improving short-circuit current and photoelectric conversion efficiency.
Drawings
Fig. 1 is a schematic cross-sectional structure of a perovskite solar cell based on a three-layer conductive polymer and gate electrode structure as set forth in example 1;
fig. 2 is a schematic diagram of the gate line electrode structure involved in embodiment 1;
FIG. 3 is a molecular structural formula of the P3HT material referred to in example 1;
FIG. 4 is a material molecular structural formula of the PDCBT referred to in example 1;
FIG. 5 is a molecular structural formula of a material of PBDB-T referred to in example 1;
FIG. 6 is a molecular structural formula of the PFBDB-T material involved in example 1;
FIG. 7 is a molecular structural formula of a material of PBDB-T-2F referred to in example 1;
FIG. 8 is a molecular structural formula of the material of PBDBT-2Cl as referred to in example 1;
FIG. 9 is a molecular structural formula of the material of P (Cl 4) BDB-T involved in example 1;
FIG. 10 is a molecular structural formula of a material of PBDBT-T-SF as referred to in example 1;
FIG. 11 is the molecular structural formula of the material of J52 referred to in example 1;
FIG. 12 is a molecular structural formula of a material of J52-2F referred to in example 1;
FIG. 13 is a molecular structural formula of a material of J52-Cl referred to in example 1;
FIG. 14 is a molecular structural formula of PTAA referred to in example 1;
FIG. 15 is a molecular structural formula of the material of the alcohol-soluble organic Lewis acid referred to in example 1; wherein, (a) is BCF; (b) is BTolF; (C) is C-BCF; (d) is Li-BCF; (e) is N-BCF; (f) is I-BCF;
FIG. 16 is a molecular structural formula of PEDOT: PSS as referred to in example 1;
FIG. 17 is a J-V performance comparison curve of perovskite solar cells based on three layers of conductive polymer and gate electrode structures as prepared in example 1 and example 2 with perovskite solar cells as prepared in comparative example 1, comparative example 2 and comparative example 3;
fig. 18 is a stability test comparison curve of the perovskite solar cell based on three-layer conductive polymer and gate electrode structure prepared as example 1 and example 2 with the perovskite solar cell prepared as comparative example 1, comparative example 2 and comparative example 3 under an illuminated nitrogen atmosphere;
the description of the various references in the drawings is as follows:
1-transparent conductive substrate, 2-electron transport layer, 3-perovskite layer, 4-p-type semi-crystalline polymer layer, 5-p-type amorphous conductive polymer layer, 6-low sheet resistance polymer layer, 7-grid electrode structure, 8-main grid line and 9-auxiliary grid line.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1
The embodiment provides a perovskite solar cell based on a three-layer conductive polymer and gate line electrode structure, the structure is shown in fig. 1, and the perovskite solar cell comprises a transparent conductive substrate 1, an electron transport layer 2, a perovskite layer 3, a p-type semi-crystalline polymer layer 4, a p-type amorphous conductive polymer layer 5, a low sheet resistance polymer layer 6 and a gate line electrode structure 7 from bottom to top. The cross section of the perovskite solar cell was square with a size of 2.5 a cm a.
The material of the grid line electrode structure 7 is Au, ag, pt, cu or carbon, and the specific structure is shown in fig. 2, and comprises a main grid line 8 and 10 auxiliary grid lines 9 symmetrically arranged at two sides of the main grid line 8 and one end of each auxiliary grid line 9 is connected with the main grid line 8; wherein the thickness of the main grid line 8 is 10 mu m, and the line width is 300 mu m; the sub-gate lines 9 have a thickness of 5 μm, a line width of 90 μm, and a pitch between adjacent sub-gate lines 9 is 0.4. 0.4 cm.
The P-type semi-crystalline polymer layer 4 may be made of P3HT, PDCBT, PBDB-T, PFBDB-T, PBDB-T-2F, PBDBT-2Cl, P (Cl 4) BDB-T, PBDBT-T-SF, J52-2F or J52-Cl, and the molecular structural formulas of the corresponding materials are shown in FIG. 3-FIG. 13 respectively. The present embodiment specifically employs PDCBT.
The p-type amorphous conductive polymer layer 5 is made of a doped PTAA, the molecular structural formula of the PTAA is shown in fig. 14, the doping agent is alcohol-soluble organic Lewis acid, and the doping agent can be BCF, BTolF, C-BCF, li-BCF, N-BCF or I-BCF, and the molecular structural formulas of the corresponding materials are shown in fig. 15 (a), 15 (b), 15 (c), 15 (d), 15 (e) and 15 (f) respectively. The alcohol-soluble organic Lewis acid adopted in the embodiment is specifically BCF, and the mass ratio of PTAA to BCF is 15:1.
The low sheet resistance polymer layer 6 is made of an organic conductive material with sheet resistance of 10-100 Ω/sq, specifically PEDOT: PSS, and the molecular structural formula is shown in figure 16. The mass ratio of PEDOT to PSS is 1:2.5 PEDOT: PSS, so that the sheet resistance of the low sheet resistance polymer layer 6 is lower, specifically 40 to 60 Ω/sq.
The electron transport layer 2 is made of n-type semiconductor material with good conductivity, specifically SnO 2 And PCBM.
The transparent conductive substrate 1 is transparent conductive glass, specifically an ITO substrate.
The perovskite layer 3 is made of Cs 0.05 MA 0.1 FAPb(I 0.85 Br 0.15 ) 3 。
The preparation method of the perovskite solar cell based on the three-layer conductive polymer and the gate line electrode structure provided by the embodiment comprises the following steps:
step 1, cleaning an ITO substrate, wiping by using a detergent and dust-free cloth, sequentially carrying out ultrasonic treatment in deionized water and isopropyl alcohol (IPA) for 10 min, and drying;
step 2, preparing SnO 2 Solution: 15 wt% SnO 2 The nanoparticle aqueous dispersion was mixed with deionized water and IPA at 1:2:2, mixing proportionally;
step 3, preparing PCBM solution: 10 mg PCBM was dissolved in 1 mL Chlorobenzene (CB);
step 4, preparing perovskite precursor solution: 2.4 mL of DMSO (Dimethyl sulfoxide ) solution and 0.6 mL of DMF (N, N-Dimethylformamide) solution were mixed uniformly;
step 5. Preparing perovskite lead iodide (PbI) 2 ) Precursor solution: 1313.85 mg lead iodide powder and 55.05 mg lead bromide (PbBr) 2 ) Mixing the powder, adding 3 mL perovskite precursor solution, and uniformly stirring;
step 6, preparing perovskite solution: mixing 146.2 mg dimethyl ether iodide (FAI) powder, 11.2 mg methylamine bromide (MABr) powder and 10.65 mg cesium bromide (CsBr) powder, adding 1.1 mL perovskite lead iodide precursor solution, and stirring uniformly;
step 7, preparing a PDCBT solution: 10 mg of the PDCBT solid was dissolved in 1 mL o-dichlorobenzene (ODCB) and used at 80deg.C;
step 8, preparing PTAA-BCF solution: respectively dissolving 15 mg of PTAA solid and 10 mg of BCF in two 1 mL CBs, and after shaking uniformly, respectively forming a PTAA solution and a BCF solution, wherein the PTAA solution and the BCF solution are mixed according to a ratio of 10:1, mixing the components in a volume ratio;
step 9, preparing PEDOT and PSS solution: the mass ratio of PEDOT to PSS is 1:2.5 adding the PEDOT-PSS material into deionized water to obtain a PEDOT-PSS solution with the mass fraction of 1.0 wt% -1.3 wt%;
step 10, sequentially spin-coating and annealing the solutions prepared in the steps 2, 3, 6, 7, 8 and 9 on the ITO substrate processed in the step 1, wherein the solutions specifically comprise:
SnO 2 spin coating the solution at 4000 rpm for 20 s, and then annealing at 140 ℃ for 20 min with a tinfoil coating;
the spin-coating conditions of the PCBM solution were spin-coating at 4000 rpm for 30 s, followed by annealing at 140℃for 10 min;
the spin coating conditions of the perovskite solution were spin coating 8 s at 2000 rpm, then spin coating 30 s at 4000 rpm, and adding CB dropwise at the last 19 s, then annealing at 140 ℃ for 10 min;
spin coating conditions of the PDCBT solution were spin coating at 3000 rpm for 30 s, followed by annealing at 100 ℃ for 10 min;
spin coating conditions of PTAA-BCF solution were spin coating at 4000 rpm for 30 s followed by annealing at 70 ℃ for 5 min;
the spin-coating condition of the PEDOT PSS solution is that spin-coating is carried out at a rotation speed of 1000 rpm for 30 s, and then annealing is carried out at 130 ℃ for 10 min;
further, a device in which an electron transport layer 2, a perovskite layer 3, a p-type semi-crystalline polymer layer 4, a p-type amorphous conductive polymer layer 5, and a low sheet resistance polymer layer 6 were sequentially formed on an ITO substrate was obtained;
and 11, printing 1 main grid line 8 on the center line of the surface (one surface of the low square resistance polymer layer 6) of the device prepared in the step 10, and respectively printing 5 auxiliary grid lines 9 with one ends connected with the main grid line 8 on two sides of the main grid line 8 to finally prepare the perovskite solar cell based on the three-layer conductive polymer and grid line electrode structure.
Example 2
This example provides a perovskite solar cell based on a three-layer conductive polymer and gate electrode structure, differing from example 1 only in that: adjusting the PDCBT solution prepared in the step 7 into a P (Cl 4) BDB-T solution, specifically dissolving 10 mg of P (Cl 4) BDB-T solid in 1 mL ODCB, and uniformly stirring to obtain the final product; thereafter spin coating the P (Cl 4) BDB-T solution at 3000 rpm for 30 s in step 10, and annealing at 80℃for 10 min; the remaining steps are identical.
Example 3
This example provides a perovskite solar cell based on a three-layer conductive polymer and gate electrode structure, differing from example 1 only in that: adjusting the material of the p-type amorphous conductive polymer layer 5 to be doped with spiro-OMeTAD, wherein the doping agent adopts Li-BCF, the mass ratio of spiro-OMeTAD to Li-BCF is 8:1, adjusting the PTAA-BCF solution prepared in the step 8 to be spiro-OMeTAD-Li-BCF solution, dissolving 72.3 mg spiro-OMeTAD powder and 9 mg BCF powder in 1 mL CB, adding 28.8 mu L tributyl phosphate (TBP) solution, stirring uniformly, and then spin-coating and annealing the PTAA-BCF solution in the step 10 to spin-coat the piro-OMeTAD-Li-BCF solution at 4000 rpm for 30 s; the remaining steps are identical.
Comparative example 1
This comparative example provides a perovskite solar cell differing from example 1 only in that: excluding the step of preparing PTAA-BCF solution of step 8, followed by the step of spin-coating and annealing the PTAA-BCF solution excluding the step of spin-coating and annealing between the PDCBT solution and the PEDOT: PSS solution; the remaining steps are identical.
Comparative example 2
This comparative example provides a perovskite solar cell differing from example 1 only in that: the mass ratio of PEDOT to PSS in the step of preparing the PEDOT to PSS solution in the step 9 is 1:2.5 PEDOT: PSS Material ", adjusted to" mass ratio of PEDOT to PSS was 1:3.5 PEDOT: PSS material ", where the sheet resistance of the low sheet resistance polymer layer 6 is relatively high, specifically 600 Ω/sq; the remaining steps are identical.
Comparative example 3
This comparative example provides a perovskite solar cell differing from comparative example 1 only in that: printing 1 main grid line 8 and 5 auxiliary grid lines 9 in the step 11, and adjusting the main grid lines and the auxiliary grid lines to be an integral silver electrode of which the evaporation is 80 and nm; the remaining steps are identical.
To demonstrate the performance differences between the perovskite solar cells based on the three-layer conductive polymer and gate electrode structures prepared in example 1 and example 2 and the perovskite solar cells prepared in comparative example 1, comparative example 2 and comparative example 3, the J-V performance test and the stability test were performed on each perovskite solar cell, respectively, as follows:
at 100 mW/cm 2 In the standard simulated sunlight of (1) and simulating the illumination condition of the atmospheric quality AM1.5, and testing the J-V performance of each perovskite solar cell, wherein the comparison curve is shown in figure 17, and the specific test result of the J-V performance is shown in table 1:
TABLE 1 specific test results of J-V Performance
| Photoelectric conversion efficiency (%) | Open circuit voltage (V) | Short circuit current density (mA/cm) 2 ） | Fill factor (%) | |
| Example 1 | 23.23 | 1.130 | 26.79 | 76.73 |
| Example 2 | 22.76 | 1.124 | 25.89 | 77.97 |
| Comparative example 1 | 22.29 | 1.123 | 25.82 | 76.85 |
| Comparative example 2 | 16.14 | 1.123 | 24.20 | 59.38 |
| Comparative example 3 | 19.27 | 1.128 | 24.36 | 70.15 |
At 60-65 ℃, in a nitrogen atmosphere, 100 mW/cm 2 The stability test was performed under irradiance of the halogen lamp, and the comparison curve is shown in fig. 18.
Referring to fig. 17 and 18, it can be seen that the perovskite solar cells based on the three-layer conductive polymer and gate electrode structures prepared in example 1 and example 2 are superior in overall performance to the perovskite solar cells prepared in comparative example 1, comparative example 2 and comparative example 3.
In comparison with example 1, although the p-type amorphous conductive polymer layer 5 was not used in comparative example 1, it can be seen from fig. 17 that there is no significant effect on the initial J-V performance of the perovskite solar cell, but in the stability test shown in fig. 18, the energy conversion efficiency thereof was rapidly attenuated, and it can be seen that the use of the p-type amorphous conductive polymer layer 5 helps to enhance the stability of the perovskite solar cell.
The PEDOT content of PEDOT: PSS in comparative example 2 was reduced compared to example 1, so that the resistance value of the low sheet resistance polymer layer 6 was increased, the series resistance was increased, and the fill factor was significantly reduced from 76.73% to 59.38%; since comparative example 2 also employed a p-type amorphous conductive polymer layer 5, which resulted in pore blocking of the p-type semi-crystalline polymer layer 4, there was no significant change in energy conversion efficiency during the 160 h test for the stability test shown in fig. 17.
In comparative example 3, which uses a monolithic all-silver electrode as compared with example 1, the short-circuit current was reduced as compared with example 1 because of the inability to perform the double-sided power generation of example 1, and a faster energy conversion efficiency decay was generated as compared with comparative example 1 without the protection of the p-type amorphous conductive polymer layer 5 because of the increased contact area of the interface between the metal electrode layer and the underlying low sheet resistance polymer layer 6.
In summary, the perovskite solar cell based on the three-layer conductive polymer and the gate electrode structure proposed in the embodiments 1 and 2 can effectively enhance the stability of the perovskite solar cell, alleviate the aging of the perovskite solar cell, and improve the J-V performance.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the scope of the invention, but to limit the invention to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (5)
1. The perovskite solar cell based on the three-layer conductive polymer and the gate electrode structure is characterized by comprising a transparent conductive substrate, an electron transmission layer, a perovskite layer, a p-type semi-crystalline polymer layer, a p-type amorphous conductive polymer layer, a low square resistance polymer layer and the gate electrode structure from bottom to top in sequence;
wherein the P-type semi-crystalline polymer layer is made of PDCBT, P3HT, PBDB-T, PFBDB-T, PBDB-T-2F, PBDBT-2Cl, P (Cl 4) BDB-T, PBDBT-T-SF, J52-2F or J52-Cl; the p-type amorphous conductive polymer layer is made of a doped PTAA or a doped spiro-OMeTAD, and the doping agents of the PTAA and the spiro-OMeTAD are alcohol-soluble organic Lewis acids, specifically BCF, BTolF, C-BCF, li-BCF, N-BCF or I-BCF; the low sheet resistance polymer layer is made of an organic conductive material with sheet resistance of 10-100 ohm/sq, and is specifically PEDOT: PSS.
2. The perovskite solar cell based on a three-layer conductive polymer and gate electrode structure according to claim 1, wherein the mass ratio of PTAA to dopant is (5-30): 1, a step of; the mass ratio of the spiro-OMeTAD to the dopant is (3-20): 1.
3. the perovskite solar cell based on the three-layer conductive polymer and the gate electrode structure according to claim 1, wherein the material of the electron transport layer is SnO 2 、TiO 2 One or more of ZnO, C60, PCBM and ICBA.
4. The perovskite solar cell based on the three-layer conductive polymer and gate electrode structure as claimed in claim 1, wherein the gate electrode structure comprises at least one main gate line and a plurality of sub-gate lines symmetrically disposed at both sides of the main gate line and connected to the corresponding main gate line at one end.
5. The perovskite solar cell based on the three-layer conductive polymer and gate electrode structure according to claim 4, wherein the average thickness of the main gate line is 5-15 μm and the line width is 200-500 μm; the average thickness of the auxiliary grid lines is 2-5 mu m, the line width is 50-130 mu m, and the distance between the adjacent auxiliary grid lines is 0.1-0.5 cm.
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