CN117200740A - Surface acoustic wave device and method for manufacturing the same - Google Patents
Surface acoustic wave device and method for manufacturing the same Download PDFInfo
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- CN117200740A CN117200740A CN202310648924.1A CN202310648924A CN117200740A CN 117200740 A CN117200740 A CN 117200740A CN 202310648924 A CN202310648924 A CN 202310648924A CN 117200740 A CN117200740 A CN 117200740A
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000004378 air conditioning Methods 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 6
- 230000001939 inductive effect Effects 0.000 claims 1
- 238000000206 photolithography Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000012447 hatching Effects 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Coils Or Transformers For Communication (AREA)
Abstract
A surface acoustic wave device includes a device chip; a plurality of resonators formed on a first face of the device chip, each of the resonators including an IDT electrode and a reflector; an element support body formed on the first surface of the device chip in a region other than a region where electrode fingers of the IDT electrode of the resonator are formed and a region where electrode fingers of the reflector are formed; and an inductance element formed on the element support and forming a space with the resonator. Accordingly, an inductance element which imparts desired characteristics to a surface acoustic wave device, does not hinder miniaturization of the surface acoustic wave device, and is easily connected to an IDT electrode of the surface acoustic wave device can be provided in the surface acoustic wave device.
Description
Technical Field
The present disclosure relates to improvements in surface acoustic wave devices and to manufacturing methods suitable for manufacturing such surface acoustic wave devices.
Background
The surface acoustic wave device is used as a frequency filter or the like for a smart phone mobile terminal or the like. In order to impart such a characteristic of use of the surface acoustic wave device, an inductance element is included in a circuit of the conventional filter (see patent document 1).
In patent document 1 (international publication No. WO 2010125873), an internal space is formed on an IDT electrode on a first surface of a device chip (substrate on which elastic waves propagate) by the device chip, a frame portion, and a cover portion. The inductance element is arranged between the frame part and the cover part. In the case where the inductance element is provided as in patent document 1, a special structure is required to electrically connect the inductance element and the IDT electrode, and therefore, the manufacturing process of the surface acoustic wave device is complicated.
If an inductance element is formed on the device chip, a special structure for electrically connecting the inductance element and the IDT electrode is not required, but a part of the area on the device chip is occupied by the inductance element, and thus, it is difficult to miniaturize the surface acoustic wave device.
Although the inductance element is generally provided outside the surface acoustic wave device, that is, on the mounting substrate side, it is desirable to form a filter circuit including desired characteristics of the inductance element on the surface acoustic wave device itself formed of a wafer level package (Wafer Level Package, WLP).
Disclosure of Invention
[ problem to be solved by the invention ]
An object of the present invention is to provide an inductance element which imparts desired characteristics to a surface acoustic wave device, does not hinder miniaturization of the surface acoustic wave device, and is easily connected to an IDT electrode of the surface acoustic wave device.
[ means for solving the problems ]
In order to solve the above problems, a surface acoustic wave device according to the present invention includes:
a device chip;
a plurality of resonators formed on a first face of the device chip, each of the resonators including an IDT electrode and a reflector;
an element support body formed on the first surface of the device chip in a region where electrode fingers constituting an IDT electrode of the resonator are formed and in a region other than the region where electrode fingers of the reflector are formed; a kind of electronic device with high-pressure air-conditioning system
And an inductance element formed on the element support and forming a space with the resonator.
In one aspect of the present invention, the surface acoustic wave device is configured such that at least two element supports are formed, and the inductance element spans between two adjacent element supports.
In one aspect of the present invention, the inductance element passes over at least a part of the plurality of resonators.
In one aspect of the present invention, the at least two element supports include at least one insulating part, and at least one insulating part of the at least two element supports is formed on a bus bar connecting the wires of the resonator or the IDT electrode.
In one aspect of the present invention, all or a part of the plurality of resonators is a ladder filter, and the inductance element is disposed above at least one parallel resonator constituting the ladder filter.
One aspect of the present invention further comprises:
a support layer formed in a region other than the resonator formation region; a kind of electronic device with high-pressure air-conditioning system
A cover layer formed on the support layer and hermetically sealing the resonator together with the device chip and the support layer;
wherein the height of the supporting layer with respect to the first surface of the device chip is higher than the height of the inductance element with respect to the first surface of the device chip.
In one aspect of the present invention, the resonator includes a bus bar connected to the electrode fingers of the IDT electrode, and a bus bar connected to the electrode fingers of the reflector, and the element support located in the formation region of the bus bar is formed of an insulating material.
In one aspect of the present invention, the resonator includes a bus bar connected to the electrode fingers of the IDT electrode and a bus bar connected to the electrode fingers of the reflector, and the element support is entirely or partially formed of a conductive material outside the formation region of the resonator.
In order to solve the above problems, a method for manufacturing a surface acoustic wave device according to the present invention includes:
a step of forming a plurality of resonators on a first surface of a device chip;
a step of forming an element support in a region other than a region where electrode fingers of an IDT electrode and a reflector are formed, the region constituting the resonator;
forming a sacrificial layer having the same height as the element support; a kind of electronic device with high-pressure air-conditioning system
And forming an inductance element on the element support and the sacrificial layer.
One aspect of the present invention further comprises:
forming a supporting layer higher than the inductance element with reference to the first surface of the device chip in a region other than the resonator forming region;
a step of removing the sacrificial layer; a kind of electronic device with high-pressure air-conditioning system
And forming a cover layer on the support layer and hermetically sealing the resonator together with the device chip and the support layer.
Effects of the invention
According to the present invention, an inductance element that imparts desired characteristics to a surface acoustic wave device, does not hinder miniaturization of the surface acoustic wave device, and is easily connected to an IDT electrode of the surface acoustic wave device can be provided in the surface acoustic wave device.
Drawings
Fig. 1 is a cross-sectional view of a surface acoustic wave device (first example) according to an embodiment of the present invention, and is approximately a cross-sectional view of the first example taken along a sectional line A-A in fig. 2.
Fig. 2 is a schematic partial plan view of the first example along the direction B in fig. 1, with the support layer omitted.
Fig. 3 is a circuit schematic of the first example.
Fig. 4 is a sectional view illustrating a step one of the manufacturing process of the first example.
Fig. 5 is a sectional view illustrating a second step of the manufacturing process of the first example.
Fig. 6 is a sectional view illustrating a third step of the manufacturing process of the first example.
Fig. 7 is a cross-sectional view illustrating a step four of the manufacturing process of the first example.
Fig. 8 is a cross-sectional view illustrating a fifth step of the manufacturing process of the first example.
Fig. 9 is a cross-sectional view illustrating a step six of the manufacturing process of the first example.
Fig. 10 is a sectional view illustrating a step seven of the manufacturing process of the first example.
Fig. 11 is a partial perspective view of the first example.
Fig. 12 is a partial perspective view of the element support constituting the first example formed on the bus bar of the resonator.
Fig. 13 is a plan view of a variation of the first example, which has the same view angle as fig. 2.
Fig. 14 is a plan view of a surface acoustic wave device (second example) according to another embodiment of the present invention, and the second example has the same view angle as fig. 2.
Fig. 15 is a plan view of a surface acoustic wave device (third example) according to still another embodiment of the present invention, and the third example has the same view angle as fig. 2.
Detailed Description
A general embodiment of the present invention will be described below with reference to fig. 1 to 15. The surface acoustic wave device 1 according to the embodiment is suitable for use as a frequency filter for a mobile communication device or the like. In particular, the surface acoustic wave device 1 of the embodiment includes the inductance element 9 which imparts the desired characteristics to the surface acoustic wave device 1, does not hinder downsizing (i.e., does not increase the volume) of the surface acoustic wave device 1, and is easily connected to the IDT electrode 3a of the surface acoustic wave device 1.
The method for manufacturing the surface acoustic wave device 1 according to the above embodiment can appropriately and reasonably manufacture the surface acoustic wave device 1 including the inductance element 9.
As shown, the surface acoustic wave device 1 is a wafer level package (Wafer Level Package, WLP) structure.
Fig. 1 shows a cross-sectional structure of the surface acoustic wave device 1. In the surface acoustic wave device 1 of the WLP structure, a support layer 4 (wall) surrounding the resonator 3 is formed in a region other than the region where the resonator 3 of the device chip 2 is formed, and a cover layer 5 (lid) hermetically sealing the resonator 3 together with the device chip 2 and the support layer 4 is formed on the support layer 4, and a hollow structure portion 6 (an internal space or a cavity) is formed between the three.
Although not shown in the drawings, the present invention can also be applied to a surface acoustic wave device of a chip scale package (Chip Size Package, CSP) structure.
The surface acoustic wave device 1 of the embodiment includes;
a device chip 2;
a plurality of resonators 3 formed on the first face 2a of the device chip 2, each of the resonators 3 including an IDT electrode 3a and a reflector 3b;
an element support 7 formed on the first surface 2a of the device chip 2 in a region other than the formation region of the electrode finger 3c constituting the IDT electrode 3a of the resonator 3 and the formation region of the electrode finger 3c of the reflector 3b (that is, a region on the first surface 2a of the device chip 2 in which the element support 7 is formed does not include the formation region of the electrode finger 3c constituting the IDT electrode 3a of the resonator 3 and the formation region of the electrode finger 3c of the reflector 3 b); a kind of electronic device with high-pressure air-conditioning system
An inductance element 9 formed on the element support 7 and forming a space 8 with the resonator 3.
The device chip 2 has a function of propagating an elastic wave. The device chip 2 is usually lithium tantalate or lithium niobate, and the device chip 2 may be formed by stacking a piezoelectric layer such as lithium tantalate or lithium niobate on a support substrate such as sapphire, silicon, alumina, spinel, crystal, or glass.
As shown in fig. 2, one of the resonators 3 has an IDT electrode 3a, and a reflector 3b sandwiching the IDT electrode 3 a. The IDT electrode 3a is constituted of electrode pairs, a plurality of electrode fingers 3c of each of the electrode pairs are arranged in parallel so that their long directions intersect with the propagation direction x of the elastic wave, and one ends of the plurality of electrode fingers 3c are connected by bus bars 3 d. In the reflector 3b, the ends of a plurality of electrode fingers 3c provided in parallel so that the longitudinal direction thereof intersects the propagation direction x of the elastic wave are connected by bus bars 3 d.
A plurality of the resonators 3 are formed on the device chip 2. Each of the resonators 3 is typically formed of a conductive metal film by a Photolithography technique (Photolithography).
Fig. 3 illustrates a filter circuit provided in the surface acoustic wave device 1. Reference numeral 3e denotes a resonator 3 connected in series between the input and output ports, reference numeral 3f denotes a resonator 3 connected in parallel between the input and output ports, and reference numeral 9 denotes an inductance element. In other words, the filter circuit according to fig. 3 constitutes a ladder filter. The filter circuit formed on the device chip 2 is typically connected to the outside by means of bumps, not shown, formed on the second side 2b of the device chip 2.
The element support 7 is formed on the first surface 2a of the device chip 2 and protrudes from the first surface 2a. In other words, the element support 7 has a first joint 7a connected to the device chip 2 and a second joint 7b connected to the inductance element 9.
The element support 7 is formed in a region other than the formation region of the electrode finger 3c of the IDT electrode 3a and the formation region of the electrode finger 3c of the reflector 3b constituting the resonator 3.
In the case where the formation region of the element support 7 is the formation region of the bus bar 3d, the entire element support 7 is formed of an insulating material, and as shown in fig. 12, as a part of the element support 7, the first joint portion 7a side portion 7c is formed of an insulating material to make the element support 7 insulating, so that the bus bar 3d and the inductance element 9 are not electrically connected. In the case where the region where the element support 7 is formed is outside the region where the resonator 3 is formed, since the device chip 2 is not conductive, the whole or a part of the element support 7 may also be formed of a conductive material.
The shape of the element support 7 may be appropriately selected according to the need. As shown, the element support 7 is hexahedral (see fig. 11). One surface of the hexahedron is the first engaging portion 7a, and an opposite surface to the surface of the first engaging portion 7a is a second engaging portion 7b.
The size of the space 8 in the direction perpendicular to the one face 2a of the device chip 2 is determined according to the thickness of the element support 7, in other words, according to the distance between the first joint portion 7a and the second joint portion 7b. Preferably, the element support 7 has a thickness of 0.5 μm to 3 μm.
For example, at least two of the element supports 7 may be formed. A plurality of the element supports 7 are typically formed around the formation region of the resonator 3, and the inductance element 9 is supported above the resonator 3 by the element supports 7.
As shown in fig. 1 to 12, in the first example, among the plurality of resonators 3 included in the surface acoustic wave device 1, the inductance element 9 surrounds one of the two resonators 3 (the resonator 3 on the left side in fig. 2) connected in parallel.
In the first example, the inductance element 9 includes a first strip portion 9a extending along a propagation direction x of the elastic wave of the resonator 3, and a second strip portion 9b extending in a direction orthogonal to the propagation direction x.
In the first example, the inductance element 9 is composed of two first band-shaped portions 9a and two second band-shaped portions 9b. For convenience of explanation, the inductance element 9 and the element support 7 shown in fig. 2 will be described below with reference to the top, bottom, left, and right of fig. 2. For convenience of illustration, the element support 7 having conductivity is indicated by hatching with a broken line, and the element support 7 having no conductivity is indicated by X mark (X mark) with a broken line.
(1) The upper end of the first band 9a on the left side is connected to the upper end of the first band 9a on the right side by the second band 9b on the upper side.
(2) The lower end of the first band-shaped portion 9a located on the right side is connected to the right end of the second band-shaped portion 9b located on the lower side, and the second band-shaped portion 9b located on the lower side passes above the resonator 3.
(3) The five element supports 7 support the lower end of the first band-shaped portion 9a on the left side, the corner portion 9c on the upper end of the first band-shaped portion 9a on the left side and engaged with the second band-shaped portion 9b on the upper side, the corner portion 9d on the upper end of the first band-shaped portion 9a on the right side and connected with the second band-shaped portion 9b on the upper side, the corner portion 9e on the lower end of the first band-shaped portion 9a on the right side and connected with the second band-shaped portion 9b on the lower end, and the left end of the second band-shaped portion 9b on the lower side, respectively.
(4) A part of a wiring pattern 10 connecting the resonator 3 is formed below the first band portion 9a located on the left side. The element support 7 supporting the lower end of the first band portion 9a is entirely formed of a conductive material, whereby the inductance element 9 is electrically connected to the resonator 3.
(5) Although the corner 9c is located on a part of the wiring pattern 10, the element support 7 supporting the corner 9c is formed entirely or partially of an insulating material and has insulating properties, whereby the inductance element 9 is not electrically connected to the resonator 3 at the corner 9 c.
(6) Only the first face 2a of the device chip 2 is below the corner 9d, and the corner 9d supporting the element support 7 is formed of a conductive material.
(7) Although a part of the wiring pattern 10 connecting the resonator 3 is formed below the corner 9e, the element support 7 supporting the corner 9e has insulation, whereby the inductance element 9 is not electrically connected to the resonator 3 at the corner 9 e.
(8) Only the first surface 2a of the device chip 2 is located below the left end of the second band-shaped portion 9b located at the lower side, and the element support 7 supporting the left end is made of a conductive material.
In other words, the inductance element 9 spans between two adjacent element supports 7 and is supported by the element supports 7.
In fig. 13, a modification of the first example is illustrated, in which a right end of the second band portion 9b located at a lower side protrudes from the wiring pattern 10, and the element support 7 supports the right end. The element support 7 supporting the right end has conductivity because the wiring pattern 10 is not provided below the right end of the second belt-like portion 9b located on the lower side.
In the second example shown in fig. 14, the inductance element 9 has a Spiral shape (Spiral) as viewed in a direction orthogonal to the first surface 2a of the device chip 2. The bus bar 3d of the IDT electrode 3a is located below the inductance element 9, and only one of the element supports 7 located above the wiring pattern 10 has conductivity among the element supports 7 supporting the inductance element 9, and a part of the wiring pattern 10 connecting the resonator 3. In fig. 14, for convenience of illustration, the element support 7 having conductivity is indicated by hatching with a broken line, and the element support 7 having no conductivity is indicated by x mark with a broken line.
In a third example shown in fig. 15, the inductance element 9 has a meandering shape (meandering) as viewed in a direction orthogonal to the first surface 2a of the device chip 2. A part of the wiring pattern 10 connecting the resonator 3, and a bus bar 3d of the IDT electrode 3a are located below the inductance element 9, and of the element supports 7 supporting the inductance element 9, only one of the element supports 7 located on the wiring pattern 10 has conductivity. In fig. 15, for convenience of illustration, the element support 7 having conductivity is indicated by hatching with a broken line, and the element support 7 having no conductivity is indicated by x mark with a broken line.
The inductance element 9 is made of conductive metal. As shown, the inductance element 9 has a band shape with its band surface substantially parallel to the first surface 2a of the device chip 2. The inductance element 9 may be formed above the rectangular resonator 3 forming region, so as to surround the rectangular resonator 3 forming region, or may be formed above at least a part of the plurality of resonators 3, as described above. The inductance element 9 may be formed above at least one parallel resonator 3f constituting the ladder filter.
The surface acoustic wave device 1 of the embodiment includes the support layer 4 and the cover layer 5, and the support layer 4 is formed as follows: the height of the support layer 4 with respect to the first surface 2a of the device chip 2 is higher than the height of the inductance element 9 with respect to the first surface 2a of the device chip 2. Thereby, in the embodiment, the inductance element 9 is located in the hollow structure portion 6.
In the surface acoustic wave device 1 of the embodiment, since the inductance element 9 imparting the desired characteristics to the surface acoustic wave device 1 forms the space 8 with the resonator 3 provided on the first surface 2a of the device chip 2 and is supported by the element support 7, the inductance element 9 does not reduce the formation area of the resonator 3 on the device chip 2, and the inductance element 9 can be easily connected to a wiring (the wiring pattern 10 illustrated in the drawing) of a filter circuit including the resonator 3.
The steps of manufacturing the surface acoustic wave device 1 according to the embodiment are focused on fig. 4 to 10. Fig. 4 to 10 show the manufacturing process of the first example, and are sectional views taken along the sectional line A-A of fig. 2.
First, a plurality of the resonators 3 are formed on the first face 2a of the device chip 2 by a Photolithography technique (step one/fig. 4).
Next, the wiring pattern 10 connecting the resonators 3 is formed by a Photolithography technique (step two/fig. 5).
Next, the element support 7 is formed in a region other than the region where the electrode finger 3c of the IDT electrode 3a constituting the resonator 3 is formed and the region where the electrode finger 3c of the reflector 3b is formed (step three/fig. 6). As shown in the drawing, the element support 7 on the right side in fig. 6, the first bonding portion 7a thereof on the wiring pattern 10 is formed of an insulating material, and the element support 7 includes a laminated structure having a portion 7c formed of the insulating material and a portion formed of a conductive material on the portion 7 c. In some embodiments, the portion 7c can be formed on a wiring connecting the resonator 3 or a bus bar 3d of the IDT electrode 3 a.
Next, a sacrificial layer 11 having the same height as the element support 7 is formed. (step four/fig. 7).
Next, the inductance element 9 is formed on the element support 7 and the sacrifice layer 11 (step five/fig. 8). The inductance element 9 may be formed by a general electrolytic plating method.
Next, the support layer 4 is formed in a region other than the region where the resonator 3 is formed, and the height of the support layer 4 is higher than the height of the inductance element 9 with reference to the first surface 2a of the device chip 2 (step six/fig. 9).
Next, the sacrificial layer 11 is removed (step seven/fig. 10). The inductance element 9 is supported by the adjacent element support 7, and the sacrifice layer 11 is removed from between the inductance element 9 and the device chip 2 using an organic solvent.
Finally, a cover layer 5 is formed on the support layer 4, the cover layer 5 and the device chip 2 hermetically sealing the resonator 3 together with the support layer 4 (step eight/fig. 1).
In general, the surface acoustic wave device 1 has a rectangular plate-like structure having a side length of 1 to 2mm and a thickness of 0.4 to 0.5 mm. In general, although not shown, the surface acoustic wave device 1 is mounted on a module substrate having a thickness of about 0.3mm together with other devices, and forms a front end module or the like having a total thickness of about 0.8mm to 1.0 mm.
It should be understood that the present invention is not limited to the above-described embodiments, but encompasses all embodiments capable of achieving the object of the present invention.
Claims (10)
1. A surface acoustic wave device, comprising:
a device chip;
a plurality of resonators formed on a first face of the device chip, each of the resonators including an IDT electrode and a reflector;
an element support body formed on the first surface of the device chip in a region where electrode fingers constituting an IDT electrode of the resonator are formed and in a region other than the region where electrode fingers of the reflector are formed; a kind of electronic device with high-pressure air-conditioning system
And an inductance element formed on the element support and forming a space with the resonator.
2. The surface acoustic wave device according to claim 1, characterized in that: the surface acoustic wave device forms at least two of the element supports, and the inductance element spans between two adjacent element supports.
3. The surface acoustic wave device according to claim 2, characterized in that: the inductive element passes over at least a portion of the plurality of resonators.
4. A surface acoustic wave device according to claim 2 or 3, characterized in that: the surface acoustic wave device includes at least two element supports, at least a part of which has an insulating property, and at least a part of which is formed on a bus bar connecting the wiring of the resonator or the IDT electrode.
5. A surface acoustic wave device according to claim 3, wherein: all or a part of the resonators are ladder filters, and the inductance element passes over at least one parallel resonator constituting the ladder filter.
6. The surface acoustic wave device according to claim 1, characterized in that: the surface acoustic wave device further includes:
a support layer formed in a region other than the resonator formation region; a kind of electronic device with high-pressure air-conditioning system
A cover layer formed on the support layer and hermetically sealing the resonator together with the device chip and the support layer;
wherein the height of the supporting layer with respect to the first surface of the device chip is higher than the height of the inductance element with respect to the first surface of the device chip.
7. The surface acoustic wave device according to claim 1, characterized in that: the resonator includes a bus bar connected to electrode fingers of the IDT electrode, and a bus bar connected to electrode fingers of the reflector, and the element support located at a formation region of the bus bar is formed of an insulating material.
8. The surface acoustic wave device according to claim 1, characterized in that: the resonator includes a bus bar connecting electrode fingers of the IDT electrode, and a bus bar connecting electrode fingers of the reflector, and the whole or a part of the element support outside the formation region of the resonator is formed of a conductive material.
9. A method for manufacturing a surface acoustic wave device, characterized by comprising: the method for manufacturing the surface acoustic wave device includes:
a step of forming a plurality of resonators on a first surface of a device chip;
a step of forming an element support in a region other than a region where electrode fingers of an IDT electrode and a reflector are formed, the region constituting the resonator;
forming a sacrificial layer having the same height as the element support; a kind of electronic device with high-pressure air-conditioning system
And forming an inductance element on the element support and the sacrificial layer.
10. The method for manufacturing a surface acoustic wave device according to claim 9, characterized in that: the method for manufacturing the surface acoustic wave device further includes:
forming a supporting layer higher than the inductance element with reference to the first surface of the device chip in a region other than the resonator forming region;
a step of removing the sacrificial layer; a kind of electronic device with high-pressure air-conditioning system
And forming a cover layer on the support layer and hermetically sealing the resonator together with the device chip and the support layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022091347A JP2023178583A (en) | 2022-06-06 | 2022-06-06 | Surface acoustic wave device and method for manufacturing surface acoustic wave device |
| JP2022-091347 | 2022-06-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117200740A true CN117200740A (en) | 2023-12-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310648924.1A Pending CN117200740A (en) | 2022-06-06 | 2023-06-02 | Surface acoustic wave device and method for manufacturing the same |
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| Country | Link |
|---|---|
| JP (1) | JP2023178583A (en) |
| CN (1) | CN117200740A (en) |
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- 2022-06-06 JP JP2022091347A patent/JP2023178583A/en active Pending
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| JP2023178583A (en) | 2023-12-18 |
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