CN117190888A

CN117190888A - Crystal bar diameter detection device and crystal bar growth equipment

Info

Publication number: CN117190888A
Application number: CN202311283702.0A
Authority: CN
Inventors: 赵旭良; 金光勳; 李寅锋; 李嘉伟
Original assignee: Zing Semiconductor Corp
Current assignee: Zing Semiconductor Corp
Priority date: 2023-09-28
Filing date: 2023-09-28
Publication date: 2023-12-08

Abstract

A crystal bar diameter detection device and crystal bar growth equipment, this crystal bar diameter detection device for crystal bar growth equipment includes: the first image acquisition device is used for acquiring a first image of the crystal bar at the liquid level of the melt, wherein the first image comprises an image of a first edge area of the crystal bar; the second image acquisition device is used for acquiring a second image of the crystal bar at the liquid level of the melt, and the first image comprises an image of a second edge area of the crystal bar; the processor is connected with the first image acquisition device and the second image acquisition device and is used for determining the detection diameter of the crystal bar based on the first image and the second image; the frame module is arranged on the crystal bar growth equipment and is used for fixing the first image acquisition device and the second image acquisition device, and the first image acquisition device and the second image acquisition device are symmetrically arranged relative to the central axis of the crystal bar.

Description

Crystal bar diameter detection device and crystal bar growth equipment

Technical Field

The application relates to the field of crystal growth, in particular to a crystal bar diameter detection device and crystal bar growth equipment.

Background

High quality single crystal silicon is an important part of the fabrication of semiconductor materials. The growth of a monocrystalline silicon crystal rod is generally carried out by adopting a large-throw crystal pulling furnace and pulling and growing in a CZ mode, during the process of pulling a silicon monocrystalline, seed crystals are generally immersed into a silicon melt first, dislocation is arranged by a seeding and growing process to achieve zero dislocation crystal growth, then the crystal is enabled to be grown from small to a target diameter through a shouldering process, the crystal length of a required size is obtained through equal-diameter growth, and finally the crystal rod is separated from a liquid level through a final process to obtain a complete crystal.

The isodiametric process is the most critical technological process in the crystal growth process and is also the core for ensuring the quality yield of crystals. The diameter of the crystal is a core element of quality on the premise of ensuring the growth stability of the crystal; the automatic control device of the crystal diameter is a key for ensuring the automatic control of the diameter in the crystal growth process; at present, a single-group CCD optical camera is mainly used for detecting the diameter of a crystal, the CCD has the convenience of detection and use, and can be installed and used in combination with different thermal field installation conditions, but the single-group CCD optical camera is installed anyway, and can be subjected to factors such as shaking generated by crystal rotation, change of detection angle and the like, under the condition, the single-group CCD optical camera is limited, the control accuracy and the actual precision of the device on the diameter are greatly influenced, so that the fluctuation of the power of the growth pulling speed is larger, and the final quality of a monocrystalline silicon rod is influenced.

Disclosure of Invention

The application aims to solve the problems, and provides a crystal bar diameter detection device and crystal bar growth equipment.

According to a first aspect of the present application, there is provided a crystal rod diameter detection apparatus for a crystal rod growth apparatus, comprising:

the first image acquisition device is used for acquiring a first image of the crystal bar at the liquid level of the melt, wherein the first image comprises an image of a first edge area of the crystal bar;

the second image acquisition device is used for acquiring a second image of the crystal bar at the liquid level of the melt, and the first image comprises an image of a second edge area of the crystal bar;

the processor is connected with the first image acquisition device and the second image acquisition device and is used for determining the detection diameter of the crystal bar based on the first image and the second image;

the frame module is arranged on the crystal bar growth equipment and is used for fixing the first image acquisition device and the second image acquisition device, and the first image acquisition device and the second image acquisition device are symmetrically arranged relative to the central axis of the crystal bar.

In some embodiments, an absolute value of a difference between a camera spacing between the first image capture device and the second image capture device and a desired diameter of the ingot is not greater than a predetermined threshold.

In some embodiments, the rack module further comprises an adjustment mechanism for adjusting a camera spacing between the first image capture device and the second image capture device.

In some embodiments, the ingot growing apparatus is further provided with a viewing port, the first image acquisition device and the second image acquisition device being disposed above the viewing port.

In some embodiments, the optical axis of the first image capturing device is parallel to the optical axis of the second image capturing device, and the optical axes of the first and second image capturing devices are respectively perpendicular to the axial direction of the ingot.

In some embodiments, the frame module further comprises a guide rail perpendicular to an axial direction of the ingot, the first image capture device and the second image capture device are connected to the guide rail, and the first image capture device and the second image capture device are configured to be movable along the guide rail.

In some embodiments, further comprising:

the device comprises a calibration disc, wherein a plurality of first slits and a plurality of second slits are arranged in the edge areas of two sides of the calibration disc, the first slits and the second slits are symmetrically distributed around the circle center of the calibration disc, the first slits correspond to the first image acquisition device, and the second slits correspond to the second image acquisition device;

during calibration, the calibration disc is arranged in the crystal bar growth equipment, is perpendicular to the axial direction of a crystal bar to be grown and intersects with the circle center of the calibration disc;

the first slits are provided with first calibration light sources, and the second slits are provided with second calibration light sources;

the first image acquisition device is further configured to: acquiring a first slit image of the first slit when the first calibration light source is lightened;

the second image acquisition device is further configured to: acquiring a second slit image of the second slit when the second calibration light source is lightened;

the processor is further configured to:

obtaining a first slit image distance between any two first slits according to the first slit image, and obtaining a second slit image distance between any two second slits according to the second slit image;

and calibrating the first image acquisition device and the second image acquisition device respectively, so that the first slit image distance is equal to a first slit distance between two corresponding first slits on the calibration disc, and the second slit image distance is equal to a second slit distance between two corresponding second slits.

In some embodiments, the diameter of the calibration disk is greater than the desired diameter.

In some embodiments, the first slits are adjacent to each other with equal or unequal spacing therebetween, and the second slits are adjacent to each other with equal or unequal spacing therebetween.

In a further aspect, the application provides a crystal rod growing device, which comprises the crystal rod diameter detection device.

According to the crystal bar diameter detection device and crystal bar growth equipment provided by the application, the first image acquisition device and the second image acquisition device synchronously detect, so that errors caused by crystal bar rotation shaking and melt liquid level height change can be eliminated, the control accuracy and actual accuracy of the crystal bar diameter are improved, the growth pulling rate power fluctuation is reduced, the growth quality of a monocrystalline silicon bar is ensured, and the first image acquisition device and the second image acquisition device respectively and independently acquire images, the detection area is concentrated, the resolution of the first image and the second image is improved, and the detection accuracy is improved.

Drawings

The following drawings are included to provide an understanding of the application and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the application and their description to explain the principles and apparatus of the application. In the drawings of which there are shown,

FIG. 1 is a schematic view of an apparatus for growing a crystal ingot according to an embodiment of the present application;

FIG. 2A is a schematic diagram of a single CCD for partial ingot diameter measurement in accordance with an embodiment of the present application;

FIG. 2B is a schematic diagram of a single CCD for partial ingot diameter measurement in accordance with an embodiment of the present application;

FIG. 3 is a schematic view of an apparatus for detecting diameter of a crystal ingot according to an embodiment of the present application;

FIG. 4 is a schematic illustration of calibration of a boule diameter detection apparatus according to an embodiment of the application.

Reference numerals:

100-furnace body, 110-crucible, 120-heating unit, 130-guide cylinder, 140-heat insulation layer, 150-crystal bar lifting unit, 160-crucible lifting unit, 170-diameter obtaining unit, 180-control unit and 190-guide cylinder lifting unit;

200-crystal bar and 210-melt;

101-first image acquisition device, 102-first image acquisition device, 103-calibration disk, 301-crystal bar, 111, 112, 113, 114-first slit, 121, 122, 123, 124-second slit

Detailed Description

In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. It will be apparent, however, to one skilled in the art that the application may be practiced without one or more of these details. In other instances, well-known features have not been described in detail in order to avoid obscuring the application.

It should be understood that the present application may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the application to those skilled in the art. In the drawings, the size and relative sizes of various components may be exaggerated for clarity. Like numbers refer to like elements throughout.

Spatially relative terms, such as "under," "below," "beneath," "under," "above," "over," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

Embodiments of the application are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the application. In this way, variations from the illustrated shape due to, for example, manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present application should not be limited to the particular shapes of the regions illustrated herein, but rather include deviations in shapes that result, for example, from manufacturing. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present application.

In order to provide a thorough understanding of the present application, detailed structures and detailed steps will be presented in the following description in order to explain the technical solution presented by the present application. Preferred embodiments of the present application are described in detail below, however, the present application may have other embodiments in addition to these detailed descriptions.

An ingot growing apparatus according to an embodiment of the application is exemplarily described with reference to fig. 1.

In this embodiment, the ingot growing apparatus may be a single crystal furnace for growing single crystal silicon by a Czochralski method. The ingot growing apparatus includes a furnace body 100, a crucible 110, a heating unit 120, a guide cylinder 130, an insulating layer 140, an ingot pulling unit 150, a crucible lifting unit 160, a diameter acquiring unit 170, a guide cylinder lifting unit 190, and a control unit 180.

The crucible 110 is provided in the furnace body 100 for accommodating a polycrystalline silicon raw material for growing single crystal silicon, the crucible 110 including a quartz crucible in which the polycrystalline silicon raw material is located and a graphite crucible in which the quartz crucible is located.

The heating unit 120 may be a graphite heater, which is located in the furnace body 100, for heating the crucible 110 so that the polycrystalline silicon raw material in the crucible 110 becomes the melt 210 and maintains a molten state.

A guide cylinder 130 (also referred to as a heat shield) is positioned within the furnace body 100 and above the level of the melt 210 in the crucible 110 around the growth region of the ingot 200, which is typically an inverted cone shield made of graphite material, to regulate the flow direction and velocity of argon gas, concentrate the downward blowing argon gas near the growth interface of the ingot 200, and prevent the high temperature level and heat radiation transfer from the crucible 110 to the cooling ingot 200, increase the heat output from the surface of the ingot 200 to the surrounding, increase the ingot side heat transfer rate, and increase the temperature gradient on the ingot side.

The insulating layer 140 may be a carbon felt, which is located in the furnace body 100 and between the heating unit 120 and the furnace body 100, for maintaining the temperature in the furnace.

The ingot pulling unit 150 (also referred to as a pulling head) is fixedly connected to the furnace body 100, and may include a fast motor, a slow motor, a rotating motor, a steel cable, a seed weighing head, etc., for lifting and rotating the seed, and recording data of the weight, displacement, etc. of the ingot 200.

The crucible lifting unit 160 is fixedly connected with the furnace body 100, and may include a ball linear guide, a high-precision screw, a lifting motor, a rotating motor, and the like, for driving the crucible 110 to lift and rotate.

The diameter obtaining unit 170 may include a CCD (charge coupled device ) camera, where the CCD camera may obtain an image at a solid-liquid interface of the ingot 200, so that an ingot profile may be obtained according to a bright ring at the solid-liquid interface, then the ingot profile may be fitted to obtain an elliptical boundary, then the elliptical boundary may be corrected to a circular boundary, and then 3 or more pixel coordinates from the circular boundary may be substituted into a circular coordinate formula to solve, so that the center coordinates and the diameter may be calculated, and the ingot diameter may be obtained.

The guide cylinder lifting unit 190 is fixedly connected with the furnace body 100, and may include a motor and a transmission component, where the motor may be a stepper motor or a servo motor, and the motor is connected with the guide cylinder 130 through the transmission component to drive the guide cylinder 130 to rise or fall relative to the liquid level of the melt 210.

The control unit 180 may include a PC control module and/or a PLC control module, and in particular, it may include a processor, a memory, an input-output interface, and the like. In this embodiment, the control unit 180 is connected to the diameter acquisition unit 170, the heating unit 120, the ingot pulling unit 150, the crucible lifting unit 160, and the guide cylinder lifting unit 190, and is configured to calculate, during growth of the ingot 200 (especially during equal diameter growth), a diameter deviation between the current ingot diameter and a preset target ingot diameter according to the current ingot diameter acquired by the diameter acquisition unit 170, calculate a liquid level deviation to be adjusted according to the diameter deviation, and adjust the position of the guide cylinder 130 according to the liquid level deviation to change the liquid level accordingly, thereby correcting the diameter deviation (i.e., when the current ingot diameter is greater than the preset target ingot diameter, the ingot diameter is reduced by changing the liquid level, and when the current ingot diameter is smaller than the target ingot diameter, the ingot diameter is increased by changing the liquid level), so that the ingot diameter is controlled to be as close to the target ingot diameter as possible, and suppress fluctuation of diameter variation. The liquid level distance referred to herein refers to the distance between the liquid level of the silicon melt 210 in the crucible 110 and the lower portion of the guide cylinder 130. In addition, the control unit 180 adjusts the crystal pulling speed and the heating power of the heating unit 120 according to the diameter deviation to correct the diameter deviation.

In the crystal pulling process, a commonly used method for measuring the diameter of the crystal bar by using a single-diameter CCD camera is as follows: the measurement mode of using a single CCD camera to measure the diameter of a local crystal bar adopts a test semicircle mode to measure the actual diameter of a measured object, the measurement mode is simple, but the error is larger, and as shown in FIG. 2A, the single-side detection is carried out by using a group of CCD cameras, so that the method has the following defects: 1) When the measured object rotates, the measured object can shake, so that the single-side measurement can correspondingly generate a certain deviation value between the actual measurement and the tested result. 2) When the measured object rises or falls along with the liquid level, the included angle between the CCD camera and the measured object is changed due to the fixed angle of the CCD camera, so that a certain amount of deviation value exists between the actual measured object and the tested result. Another commonly used method for measuring the diameter of the ingot by a single diameter CCD camera is as follows: as shown in fig. 2B, the single CCD camera is used to measure the diameter of the entire ingot, the actual diameter of the measured object can be obtained easily by using a multi-point capturing method, and the measured object diameter can be measured intuitively and accurately because the measured area exceeds 1/3 of the arc length by using multi-point dynamic measurement, however, the method has the following disadvantages: 1. the larger detection area of the CCD camera leads to the reduction of the average resolution of the camera, influences the accuracy of the measured object, and cannot achieve an accuracy value smaller than 1 mm. 2. Since the CCD camera is a single mount, it is subject to an error amount caused by a change in the measurement angle when the liquid level changes.

In view of the foregoing, the present application provides a rod diameter detection apparatus, which will be described below with reference to fig. 3 and 4, wherein the features of the various embodiments of the present application may be combined with each other without conflict.

As an example, as shown in fig. 3, the present application provides a crystal rod diameter detection apparatus for a crystal rod growing apparatus, the crystal rod diameter detection apparatus comprising: a first image acquisition device 101, configured to acquire a first image of the ingot at the melt level, where the first image includes an image of a first edge area A1 of the ingot; and a second image acquisition device 102 for acquiring a second image of the ingot 301 at the melt level, wherein the first image includes an image of a second edge region B1 of the ingot 301, and wherein an absolute value of a difference between a camera spacing between the first image acquisition device 101 and the second image acquisition device 102 and a required diameter of the ingot is not greater than a predetermined threshold, optionally, the predetermined threshold is equal to half of a sum of a field diameter of the first image acquisition device 101 and a field diameter of the second image acquisition device 102 (as indicated by a dot-dash line in fig. 3). The first image collector and the second image collector may be, for example, a CCD camera or any other device capable of collecting image information.

Alternatively, the camera distance L between the first image acquisition device 101 and the second image acquisition device 102 is equal to the required diameter D of the ingot, which may be understood as the diameter of the ingot intended to be grown. In some embodiments, the optical axis of the first image capturing device 101 is parallel to the optical axis of the second image capturing device 102, and the optical axes of the first image capturing device 101 and the second image capturing device 102 are respectively perpendicular to the axial direction of the ingot, that is, the connection line of the first image capturing device 101 and the second image capturing device 102 is parallel to the required diameter of the object to be tested (e.g. ingot). With such an arrangement, during diameter measurement of the ingot, the first image acquisition device 101 may capture a first image of one side edge region of the ingot, while the second image acquisition device 102 may capture a second image of the other side edge region of the ingot, and the processor may obtain the diameter of the ingot by performing processing analysis on the first image and the second image.

Further, the ingot diameter detecting apparatus further includes a frame module (not shown) provided in the ingot growing device for fixing the first image pickup device 101 and the second image pickup device 102, and symmetrically arranging the first image pickup device 101 and the second image pickup device 102 with respect to a central axis of the ingot.

The gantry module may be implemented by any suitable structure, for example, the gantry module further comprises an adjusting mechanism for adjusting a camera distance between the first image capturing device 101 and the second image capturing device 102, such that the camera distance between the first image capturing device 101 and the second image capturing device 102 meets a requirement, such that an absolute value of a difference between the first image capturing device 101 and the second image capturing device 102 and a required diameter of the ingot is not larger than the predetermined threshold, for example, such that the camera distance between the first image capturing device 101 and the second image capturing device 102 is equal to the required diameter of the ingot, which may be understood as a diameter of the ingot of predetermined growth. The adjustment mechanism may be implemented by any enabling mechanism, for example, a motor or other driving device may be used to drive the first image capturing device 101 and the second image capturing device 102 to move, so as to adjust the distance between the two.

In some embodiments, the frame module further includes a guide rail perpendicular to the axial direction of the ingot, the first image capturing device 101 and the second image capturing device 102 are connected to the guide rail, and the first image capturing device 101 and the second image capturing device 102 are configured to be movable along the guide rail, for example, the frame module further includes a first support arm and a second support arm, wherein the first image capturing device 101 may be fixed to one end of the first support arm, the other end of the first support arm is connected to the guide rail, and the first support arm is further in driving connection with an adjustment mechanism, the second image capturing device 102 may be fixed to one end of the second support arm, the other end of the second support arm is connected to the guide rail, and the second support arm is further in driving connection with the adjustment mechanism, and at least one of the first support arm and the second support arm is driven to move along the guide rail by the adjustment mechanism, thereby adjusting a camera distance between the first image capturing device 101 and the second image capturing device 102.

Further, in order to calculate and obtain the measured diameter of the ingot, the ingot diameter detection device of the present application further includes a processor connected to the first image acquisition device 101 and the second image acquisition device 102, for determining the detected diameter of the ingot based on the first image and the second image, any suitable method may be used to determine the detected diameter of the ingot based on the first image and the second image, for example, the first diameter of the ingot may be obtained by processing the first image, or the second diameter of the ingot may be obtained by processing the second image, and then the measured diameter of the ingot may be obtained by averaging the first diameter and the second diameter, and for example, the measured diameter may be obtained by calculating the first image and the second image together, and for example, the first image of a plurality of measurement points on the ingot, and the second image of a plurality of measurement points on the ingot may be obtained, and then the first diameter and the second diameter may be obtained by averaging the plurality of first diameters and the second diameter. It should be appreciated that the above is by way of example only and that any other suitable method may be applied to the present application.

Because two groups of independent image acquisition devices are adopted, the camera distance between the two image acquisition devices is equal to the required diameter, and the optical axes of the two image acquisition devices are parallel to the axial direction of the crystal bar, the measured object such as the crystal bar can still keep a parallel view when the liquid level changes, and therefore the error between the actual diameter value and the measured diameter value is eliminated. Meanwhile, the capturing function of synchronous cooperation of the two cameras can eliminate the left-right deviation amount generated when the crystal bar rotates, so that the measuring diameter is more accurate.

Further, when the ingot diameter detection system is applied to measuring the ingot diameter, in order to ensure the measurement accuracy and the accuracy of the position of the image capturing device and the quality of the captured image, the position of the image capturing device may be calibrated in advance, in some embodiments, as shown in fig. 4, the ingot diameter detection device further includes a calibration plate 103, where the calibration plate 103 is provided with a plurality of first slits 111, 112, 113, 114 and a plurality of second slits 121, 122, 123, 124 in two side edge areas, the first slits 111, 112, 113, 114 and the second slits 121, 122, 123, 124 may be slots, or holes penetrating the calibration plate 103, and when the holes are slots, the first slits 111, 112, 113, 114 and the second slits 121, 122, 123, 124 are not distributed symmetrically about the center of the calibration plate 103, and the plurality of first slits 111, 112, 113, 114 correspond to the first image capturing device 101, and the plurality of second slits 121, 122, 124 correspond to the second slits 121, 122, 124 and the second slit 102 may also capture images in at least a first view field of view of the first view of the device in the first view of at least one view of the first view of the device 102.

In some embodiments, the diameter of the calibration disk 103 is greater than the desired diameter of the ingot. The distance between a first slit and a second slit symmetrical to the first slit about the center of the calibration disk 103 may be equal to the required diameter of the ingot, and the distance between two first slits symmetrical about the center of the circle and the second slit may be larger than the required diameter or smaller than the required diameter, so that at least one first slit needs to be ensured to be within the field of view of the first image capturing device 101 (for example, the left oval dashed box in fig. 4), and at least one second slit needs to be ensured to be within the field of view of the second image capturing device 102 (for example, the right oval dashed box in fig. 4), thereby ensuring that the calibration is achieved.

In some embodiments, the first slits are equally or unequally spaced, and the second slits are equally or unequally spaced.

Further, in some embodiments, the calibration plate 103 is disposed within the ingot growth apparatus during calibration, and the calibration plate 103 is perpendicular to the axial direction of the ingot to be grown and intersects the center of the calibration plate 103; the plurality of first slits 111, 112, 113, 114 are provided with a first calibration light source, the plurality of second slits are provided with a second calibration light source, the first calibration light source may be disposed in the first slits 111, 112, 113, 114, or may be disposed below the first slits 111, 112, 113, 114, which may be one light source or a plurality of light sources, the light exiting from the first slits 111, 112, 113, 114 exits towards the first image capturing device 101, and the second calibration light source may be disposed in the first slits 111, 112, 113, 114, or may be disposed below the second slits, which may be one light source or a plurality of light sources, the light exiting from the second slits exits towards the second image capturing device 102.

Further, in some embodiments, the first image acquisition device 101 is further configured to: acquiring a first slit image of the first slit when the first calibration light source is lightened; the second image acquisition device 102 is further configured to: and when the second calibration light source is lightened, acquiring a second slit image of the second slit. The processor may be connected to the first calibration light source and the second calibration light source, respectively, to thereby effect control of the turning on or off of the light sources, wherein the second calibration light source may be turned off or may be turned on when the first calibration light source is turned on, and the first calibration light source may be turned off or may be turned on when the second calibration light source is turned on. Can be reasonably selected according to actual needs.

The first and second calibration light sources may be laser light sources or LED light sources or any other suitable light source.

Further, in some embodiments, the processor is further configured to: obtaining a first slit image distance between any two first slits according to the first slit image, and obtaining a second slit image distance between any two second slits according to the second slit image; the first image capturing device 101 and the second image capturing device 102 are calibrated respectively, so that the first slit image distance is equal to the first slit distance between two corresponding first slits on the calibration disk 103, and the second slit image distance is equal to the second slit distance between two corresponding second slits, thereby realizing the calibration of the first image capturing device 101 and the second image capturing device 102.

For example, as shown in fig. 4, the first and second slits are provided at both sides of the calibration disk 103 at predetermined intervals, and the intervals may be any suitable size, for example, any size between 2mm and 20mm, for example, 2mm, 3mm, 5mm, 8mm, 12mm, 18mm, 20mm, etc., wherein the sizes, for example, widths, of the first and second slits in the radial direction may be any suitable size, for example, between 0.05 and 1mm, for example, 0.05mm, 0.1mm, 0.5mm, 0.8mm, 1mm, etc., wherein the different slits may have the same size or different sizes, without being particularly limited thereto. Wherein, be provided with first calibration light source below first crack, be provided with the second calibration light source at second crack slit, the calibration light source is used for lighting dark space to make image acquisition device can catch light and shoot the image of crack.

During calibration, the calibration disk 103 sequentially lights up the different slits on one side according to the requirement, if the first slit image distance obtained by calculating the first slit image distance according to the first slit image acquired by the first image acquisition device 101 is ab=5 mm, ac=10 mm and ad=15 mm, the position of the first image acquisition device 101 and the acquired image can truly reflect the actual measurement condition, and if the first slit image distance is not met, the position of the first image acquisition device 101 can be adjusted or the shooting angle can be adjusted so that the first slit image distance is equal to the first slit distance between the corresponding slits on the first image acquisition device 103, and the calibration result can be accurately achieved by the same calibration disk 102 in a similar manner if the first slit image distance obtained by calculating the first slit image according to the first image acquisition device 101 is ab=5 mm, ac=10 mm and ad=15 mm.

Further, in some embodiments, to facilitate the first image acquisition device 101 being able to photograph the ingot within the ingot growth apparatus, the ingot growth apparatus is further provided with a viewing port, the first image acquisition device 101 and the second image acquisition device 102 being disposed above the viewing port.

Further, in one aspect, the present application also provides a crystal rod growing apparatus, which includes the crystal rod diameter detecting device of the foregoing embodiment. And the crystal bar growth apparatus in the embodiment of the present application may also be implemented as the aforementioned crystal bar growth apparatus of fig. 1.

In summary, according to the crystal bar diameter detection device and the crystal bar growth equipment provided by the application, two groups of independent image acquisition devices are adopted, so that the camera distance between the two image acquisition devices is equal to the required diameter, the optical axes of the two image acquisition devices are parallel to the axial direction of the crystal bar, and the measured object such as the crystal bar can still keep a parallel view when the liquid level changes, thereby eliminating the error between the actual diameter value and the measured diameter value. Meanwhile, the capturing function of synchronous cooperation of the two cameras can eliminate the left-right deviation amount generated when the crystal bar rotates, so that the measuring diameter is more accurate.

Although the illustrative embodiments have been described herein with reference to the accompanying drawings, it is to be understood that the above illustrative embodiments are merely illustrative and are not intended to limit the scope of the present application thereto. Various changes and modifications may be made therein by one of ordinary skill in the art without departing from the scope and spirit of the application. All such changes and modifications are intended to be included within the scope of the present application as set forth in the appended claims.

Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.

In the several embodiments provided by the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. For example, the above-described device embodiments are merely illustrative, e.g., the division of the elements is merely a logical functional division, and there may be additional divisions when actually implemented, e.g., multiple elements or components may be combined or integrated into another device, or some features may be omitted or not performed.

In the description provided herein, numerous specific details are set forth. However, it is understood that embodiments of the application may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.

Similarly, it should be appreciated that in order to streamline the application and aid in understanding one or more of the various inventive aspects, various features of the application are sometimes grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of the application. However, the method of the present application should not be construed as reflecting the following intent: i.e., the claimed application requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this application.

It will be understood by those skilled in the art that all of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or units of any method or apparatus so disclosed, may be combined in any combination, except combinations where the features are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.

Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features but not others included in other embodiments, combinations of features of different embodiments are meant to be within the scope of the application and form different embodiments. For example, in the claims, any of the claimed embodiments may be used in any combination.

It should be noted that the above-mentioned embodiments illustrate rather than limit the application, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The application may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.

Claims

1. A crystal bar diameter detection device for crystal bar growth equipment, characterized by comprising:

2. The ingot diameter inspection apparatus of claim 1, wherein an absolute value of a difference between a camera spacing between the first image capturing device and the second image capturing device and a required diameter of the ingot is not greater than a predetermined threshold.

3. The ingot diameter inspection apparatus of claim 1, wherein the rack module further comprises an adjustment mechanism for adjusting a camera spacing between the first and second image capture devices.

4. The ingot diameter inspection apparatus of claim 1, wherein the ingot growing equipment is further provided with a viewing port, the first and second image capturing devices being disposed above the viewing port.

5. The ingot diameter inspection apparatus as set forth in claim 1, wherein an optical axis of the first image pickup device is parallel to an optical axis of the second image pickup device, and the optical axes of the first and second image pickup devices are perpendicular to an axial direction of the ingot, respectively.

6. The ingot diameter inspection apparatus of claim 1, wherein the rack module further comprises a rail perpendicular to an axial direction of the ingot, the first and second image capture devices are connected to the rail, and the first and second image capture devices are configured to be movable along the rail.

7. The ingot diameter sensing apparatus of claim 1, further comprising:

the processor is further configured to:

8. The ingot diameter sensing apparatus of claim 7, wherein the diameter of the calibration disk is greater than the desired diameter.

9. The ingot diameter sensing apparatus of claim 7, wherein the first slits are adjacent to each other with equal or unequal spacing therebetween, and the second slits are adjacent to each other with equal or unequal spacing therebetween.

10. A crystal rod growing apparatus comprising the crystal rod diameter detecting device according to any one of claims 1 to 9.