CN117177086B - Pixel circuit of high sharpness detector, high sharpness detector and control method - Google Patents
Pixel circuit of high sharpness detector, high sharpness detector and control method Download PDFInfo
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Abstract
The application relates to the technical field of detection, in particular to a pixel circuit of a high-sharpness detector, the high-sharpness detector and a control method. The circuit comprises a voltage division branch consisting of a photosensitive detection unit, a line scanning switch unit and a current control unit, an amplifying branch consisting of a load unit and a voltage amplifying unit and an output switch unit. In the detection stage, the current control unit receives a first current control signal, the line scanning switch unit and the output switch unit receive a line scanning signal, the voltage division branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit; the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state, so that clearer detail contrast and higher image sharpness are obtained.
Description
Technical Field
The application relates to the technical field of detection, in particular to a pixel circuit of a high-sharpness detector, the high-sharpness detector and a control method.
Background
Sharpness is an indicator that reflects the sharpness of an image plane and the sharpness of an image edge. In the field of photography, the high sharpness of a lens is a double-edged sword, which on one hand makes the visual effect of a picture clear, and on the other hand, due to the improvement of contrast, some main details which are not originally good are enlarged and secondary details are covered, so that the actual details are reduced and the level of the details is lost, for example, in AOI (Automatic Optic Inspection, automatic optical detection) defect detection of a liquid crystal panel, the area of point defects is adopted to indicate the severity of the defects; therefore, the accurate detection value of the point defect area is critical to the point defect identification classification, and the judgment result of the defect grade of the liquid crystal panel is directly affected. The point defect belongs to microscopic defects, and is identified by adopting a high-resolution industrial camera at present, but the depth of field of a lens of the industrial camera is limited, and when the distance between a measured object and the lens exceeds the working distance of the lens, the imaging of the camera is out of focus, so that diffuse spots are formed. This phenomenon can cause edges in the image to become blurred and the area deviates from the true value.
For a common camera lens, sharpness (contrast) decays as the distance of the light-sensing position from the center of the lens increases, so that a photographed picture has a distribution feature with higher picture center sharpness (characterization resolution) and lower edge sharpness. That is, it is difficult to achieve a photograph taken by a current normal camera lens with a high sharpness for the entire photograph (full field of view) (e.g., sharpness for the full field of view such as sharpness for the center region of the picture). I.e. the current common camera lens cannot shoot full field high sharpness images.
Disclosure of Invention
Based on this, it is necessary to provide a pixel circuit of a high sharpness detector, and a control method for the above technical problems.
In a first aspect, an embodiment of the present invention provides a pixel circuit of a high sharpness detector, where the circuit includes a voltage division branch composed of a photosensitive detection unit, a line scanning switch unit, and a current control unit, an amplification branch composed of a load unit and a voltage amplification unit, and an output switch unit; the photosensitive detection unit, the line scanning switch unit and the current control unit are sequentially connected between a power supply end and the public ground, the load unit and the voltage amplifying unit are sequentially connected between the power supply end and the public ground, the voltage dividing branch is connected with the amplifying branch, and the output switch unit is connected with the midpoints of the load unit and the voltage amplifying unit;
in the detection stage, the current control unit receives a first current control signal, the line scanning switch unit and the output switch unit receive a line scanning signal, the voltage division branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit;
the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state.
In an embodiment, the line scanning switch unit includes a switch tube M2, the current control unit includes a switch tube M3, a gate of the switch tube M2 is connected to a line scanning signal, a source of the switch tube M2 is connected to a drain of the switch tube M3, a drain of the switch tube M2 is connected to one end of the photosensitive detection unit, a gate of the switch tube M3 is connected to a first current control signal, and a source of the switch tube M3 is connected to a common ground.
In an embodiment, the load unit includes a switching tube M1, the voltage amplifying unit includes a switching tube M4, a gate and a drain of the switching tube M1 are connected to a power supply terminal, a source of the switching tube M1 is connected to a drain of the switching tube M4, a gate of the switching tube M4 is connected to a drain of the switching tube M3, and a source of the switching tube M4 is connected to a common ground.
In an embodiment, the output switching unit includes a switching tube M5, a gate of the switching tube M5 is connected to a row scanning signal, a drain of the switching tube M5 is connected to a midpoint between the load unit and the voltage amplifying unit, and a source of the switching tube M5 outputs a detection signal.
In an embodiment, the load unit includes a switch tube M6, the voltage amplifying unit includes a switch tube M7, a gate of the switch tube M6 is connected to the second current control signal, a drain of the switch tube M6 is connected to the power supply terminal, a source of the switch tube M6 is connected to the drain of the switch tube M7, a gate of the switch tube M7 is connected to the drain of the switch tube M3, and a source of the switch tube M7 is connected to the common ground.
In an embodiment, the load unit includes a switch tube M8, the voltage amplifying unit includes a switch tube M9, a gate of the switch tube M8 is connected to a drain, a source of the switch tube M8 is connected to a power supply end, a drain of the switch tube M8 is connected to a drain of the switch tube M9, a gate of the switch tube M9 is connected to a drain of the switch tube M3, and a source of the switch tube M9 is connected to a common ground.
In an embodiment, the load unit includes a switching tube M10, the voltage amplifying unit includes a switching tube M11, a gate of the switching tube M10 is connected to a drain of the switching tube M3, a source of the switching tube M10 is connected to a power supply terminal, a drain of the switching tube M10 is connected to a drain of the switching tube M11, a gate of the switching tube M11 is connected to a drain of the switching tube M11, and a drain of the switching tube M11 is connected to a common ground.
In an embodiment, the load unit includes a switch tube M12, the voltage amplifying unit includes a switch tube M13, a gate of the switch tube M12 is connected to a drain of the switch tube M3, a source of the switch tube M12 is connected to a power supply end, a drain of the switch tube M12 is connected to a drain of the switch tube M13, a gate of the switch tube M13 is connected to a third current control signal, and a drain of the switch tube M13 is connected to a common ground.
In a second aspect, an embodiment of the present invention proposes a high sharpness detector, including an array device composed of a plurality of pixel circuit arrangements as described in the second aspect, at least one signal driving unit, and a detecting unit;
the at least one signal driving unit is connected with each pixel circuit and is used for outputting a first current control signal and a line scanning signal;
the detection unit is connected with each pixel circuit and is used for providing a power supply end and receiving detection signals.
In a third aspect, an embodiment of the present invention provides a control method for a high sharpness detector, applied to the high sharpness detector according to the second aspect, the method including:
in a detection stage, sequentially providing a first current control signal and a row scanning signal for each row of pixel circuits in an array device according to a specific switching sequence so as to control the row scanning switching unit and the output switching unit to be in a linear state, wherein the current control unit, the load unit and the voltage amplifying unit are in a saturated state;
and receiving detection signals output by each row of pixel circuits in turn.
Compared with the prior art, in the detection stage, the current control unit receives the first current control signal, the line scanning switch unit and the output switch unit receive the line scanning signal, the voltage dividing branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit; the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state, so that clearer detail contrast and higher image sharpness are obtained.
Drawings
FIG. 1 is a schematic diagram of a pixel circuit of a high sharpness detector according to an embodiment;
FIG. 2 is a circuit schematic of the pixel circuitry of the high sharpness detector in a first exemplary embodiment;
FIG. 3 is a signal diagram of stages in a first exemplary embodiment;
FIG. 4 is a circuit schematic of the pixel circuitry of the high sharpness detector in a second exemplary embodiment;
FIG. 5 is a circuit schematic of a pixel circuit of a high sharpness detector in a third exemplary embodiment;
FIG. 6 is a circuit schematic of a pixel circuit of a high sharpness detector in a fourth exemplary embodiment;
FIG. 7 is a circuit schematic of a pixel circuit of a high sharpness detector in a fifth exemplary embodiment;
FIG. 8 is a schematic diagram of a high sharpness detector in an embodiment;
FIG. 9 is a flow chart of a control method according to an embodiment;
FIG. 10 is a schematic diagram of signals in an embodiment.
Detailed Description
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are used in the description of the embodiments will be briefly described below. It is apparent that the drawings in the following description are only some examples or embodiments of the present invention, and it is apparent to those of ordinary skill in the art that the present invention may be applied to other similar situations according to the drawings without inventive effort. Unless otherwise apparent from the context of the language or otherwise specified, like reference numerals in the figures refer to like structures or operations.
As used in the specification and in the claims, the terms "a," "an," "the," and/or "the" are not specific to a singular, but may include a plurality, unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that the steps and elements are explicitly identified, and they do not constitute an exclusive list, as other steps or elements may be included in a method or apparatus.
While the present invention makes various references to certain modules in a system according to embodiments of the present invention, any number of different modules may be used and run on a computing device and/or processor. The modules are merely illustrative and different aspects of the systems and methods may use different modules.
It will be understood that when an element or module is referred to as being "connected," "coupled" to another element, module, or block, it can be directly connected or coupled or in communication with the other element, module, or block, or intervening elements, modules, or blocks may be present unless the context clearly dictates otherwise. The term "and/or" as used herein may include any and all combinations of one or more of the associated listed items.
In an embodiment, as shown in fig. 1, a pixel circuit of a high sharpness detector is provided, the circuit includes a voltage dividing branch 10 composed of a photosensitive detection unit 101, a line scanning switch unit 102, a current control unit 103, an amplifying branch 20 composed of a load unit 201, a voltage amplifying unit 202, and an output switch unit 30; the photosensitive detection unit 101, the row scanning switch unit 102 and the current control unit 103 are sequentially connected between a power supply end VDD and a common ground, the load unit 201 and the voltage amplification unit 202 are sequentially connected between the power supply end VDD and the common ground, the voltage division branch 10 is connected with the amplification branch 20, and the output switch unit 30 is connected with the midpoints of the load unit 201 and the voltage amplification unit 202.
The photosensitive detection unit 101 is a photosensitive material with a reduced or increased resistance after being illuminated, and is not limited to a photoresistor, but may be a binder resistor, a thermistor, or other units with a resistance value that changes after being stimulated by external conditions.
The current control unit 103 is connected to a first current control signal Vb for controlling the current control unit 103 to generate a desired constant current.
The load unit 201 acts as a load in the amplifying branch.
The line scanning signal is used for changing the gate voltage of the line scanning switch unit 102 and controlling the on and off of the line scanning switch unit; and also for changing the gate voltage of the output switching unit 30 for controlling the on and off of the output switching unit, the output switching unit 30 being used for isolating the mutual interference when different row signals are output.
The row scan switch unit 102, the current control unit 103, the load unit 201, and the voltage amplifying unit 202 are thin film transistors, which may be voltage controlled devices such as MOSFETs, JFETs, and the like.
When the line scanning signal reaches the current line, the voltage dividing branch 10 starts the current line of the line scanning control unit, and the rest line scanning control units are closed. When the line scanning signal reaches the current line, the current control unit generates a required current, the current generates the voltage division through the photosensitive detection unit 101, the voltage division controls the amplifying branch to generate an amplifying signal, when the photosensitive resistor receives an external illumination resistor to change through the output switch unit 30 to output a detection signal OUT, the voltage division changes, and the detection signal synchronously changes.
In the detection stage, the current control unit 103 receives a first current control signal, the line scanning switch unit 102 and the output switch unit 30 receive a line scanning signal, the voltage division branch 10 controls the amplifying branch 20 to output an amplifying signal, and the detecting signal OUT is output through the output switch unit 30; wherein the line scan switching unit 102 and the output switching unit 30 are in a linear state, and the current control unit 103, the load unit 201, and the voltage amplifying unit 202 are in a saturated state.
Because the line scanning switch unit and the output switch unit are in a linear state, namely different slope relations between the output detection signal and the input light intensity, and the larger slope means that the voltage value of the detection signal is larger under the condition of the same light intensity difference between adjacent pixels, the clearer detail contrast ratio and the larger image sharpness can be obtained.
In a first exemplary embodiment, as shown in fig. 2, the line scanning switching unit includes a switching tube M2, the current control unit includes a switching tube M3, a gate of the switching tube M2 is connected to a line scanning signal, a source of the switching tube M2 is connected to a drain of the switching tube M3, a drain of the switching tube M2 is connected to one end of the photosensitive detection unit, a gate of the switching tube M3 is connected to a first current control signal, and a source of the switching tube M3 is connected to a common ground.
The load unit comprises a switch tube M1, the voltage amplifying unit comprises a switch tube M4, a grid electrode and a drain electrode of the switch tube M1 are connected with a power supply end VDD, a source electrode of the switch tube M1 is connected with the drain electrode of the switch tube M4, a grid electrode of the switch tube M4 is connected with the drain electrode of the switch tube M3, and a source electrode of the switch tube M4 is connected with a public ground.
The output switch unit comprises a switch tube M5, a grid electrode of the switch tube M5 is connected with a line scanning signal, a drain electrode of the switch tube M5 is connected with the midpoint of the load unit and the voltage amplifying unit, and a source electrode of the switch tube M5 outputs a detection signal.
As shown in fig. 3, the operation of the pixel circuit can be divided into five stages, respectively named: a p1 reset phase, a p2 detection phase and a p3 reset phase, a p4 reset phase 1, a p5 shut down phase.
P1 reset phase: the first current control signal Vb rises from low potential to high potential, the current switching tube M3 is turned on, the grid voltage of the switching tube M4 is reset, the line scanning signal SW is at low potential, and the switching tube M2 and the switching tube M5 are in an unchanged state;
p2 detection phase: the first current control signal Vb keeps high potential, the switching tube M3 and the switching tube M4 keep on state, the line scanning signal SW is changed from low potential to high potential, the switching tube M2 and the switching tube M5 are turned on, a proper transistor size (including transistor material, transistor width-length ratio, etc.) and a proper line scanning signal SW are selected, the first current control signal Vb, the power supply VDD voltage, the switching tube M2 and the switching tube M5 are in a linear state, the switching tube M3, the switching tube M1 and the switching tube M4 are in a saturated state, and then the voltage of the output detection signal in the detection stage is:
，
wherein gm1, gm3 and gm4 are the change rates of the input admittances of the switching transistors M1, M2 and M3 to the output current, RLn is the resistance value of the photosensitive detection unit,a is the ratio of the resistance value of the photosensitive detection unit to the light intensity.
According to the above relation, we can know that only the values of the change rate gm3, the change rate gm4, the first current control signal Vb, the change rate gm1 and the ratio a need to be reasonably adjusted, so that different slope relations between the voltage of the detection signal and the input light intensity can be obtained, and the larger slope means that the difference of the detection voltage values is larger under the condition of the same light intensity difference between adjacent pixels, and clearer detail contrast and higher image sharpness can be obtained through an external system;
p3 reset phase: the first current control signal Vb is reduced from high potential to low potential, the switching tube M3 is closed, the N point potential is increased to VDD (or the threshold voltage of the switching tube M2), the switching tube M4 enters a linear region, and the M point potential is reset;
p4 reset phase: the line scanning signal SW is changed from high potential to low potential, the switching tubes M2 and M5 are closed, the first current control signal Vb is changed from low potential to high potential, the switching tube M3 is opened, the N point potential is reset to be grounded, and the switching tube M4 is closed;
p5 off phase: the current line pixel scanning and reset completion line scanning signal SW maintains a low potential, and the first current control signal Vb changes from a high potential to a low potential, cutting off the connection between the current line and the entire array.
The pixel circuit provided by the embodiment can effectively adjust the detected voltage signal difference between different pixel points under the same brightness difference through the first current control signal; the voltage of the key node in the reset circuit can be effectively reset in a reset mode, so that no circuit path exists in the pixel in the non-working stage, and the power consumption of the detector panel is reduced.
In the second exemplary embodiment, as shown in fig. 4, the load unit includes a switching tube M6, the voltage amplifying unit includes a switching tube M7, a gate of the switching tube M6 is connected to the second current control signal, a drain of the switching tube M6 is connected to the power supply terminal, a source of the switching tube M6 is connected to the drain of the switching tube M7, a gate of the switching tube M7 is connected to the drain of the switching tube M3, and a source of the switching tube M7 is connected to the common ground.
The switching tube M6 is a diode unit load, the grid electrode of the switching tube M6 is controlled by the second current control signal Va, and the switching tube M6 always works in a saturated state in the working process of the pixel circuit.
In the third exemplary embodiment, as shown in fig. 5, the load unit is different from the first exemplary embodiment in that the load unit includes a switching tube M8, the voltage amplifying unit includes a switching tube M9, a gate electrode of the switching tube M8 is connected to a drain electrode, a source electrode of the switching tube M8 is connected to a power supply terminal, a drain electrode of the switching tube M8 is connected to a drain electrode of the switching tube M9, a gate electrode of the switching tube M9 is connected to a drain electrode of the switching tube M3, and a source electrode of the switching tube M9 is connected to a common ground.
The switching transistor M8 adopts a diode connection mode of a p-type transistor.
In the fourth exemplary embodiment, as shown in fig. 6, the load unit is different from the first exemplary embodiment in that the load unit includes a switching tube M10, the voltage amplifying unit includes a switching tube M11, a gate of the switching tube M10 is connected to a drain of the switching tube M3, a source of the switching tube M10 is connected to a power supply terminal, a drain of the switching tube M10 is connected to a drain of the switching tube M11, a gate of the switching tube M11 is connected to a drain of the switching tube M11, and a drain of the switching tube M11 is connected to a common ground.
The whole output branch of the circuit adopts a p-type common source amplifying structure, namely a switching tube M10 and a switching tube M11 respectively adopt p-type transistors, and the switching tube M10 is a load connected with a p-type diode.
In a fifth exemplary embodiment, as shown in fig. 7, the load unit is different from the first exemplary embodiment in that the load unit includes a switching tube M12, the voltage amplifying unit includes a switching tube M13, a gate of the switching tube M12 is connected to a drain of the switching tube M3, a source of the switching tube M12 is connected to a power supply terminal, a drain of the switching tube M12 is connected to a drain of the switching tube M13, a gate of the switching tube M13 is connected to a third current control signal, and a drain of the switching tube M13 is connected to a common ground.
The whole output branch of the pixel circuit adopts a p-type common source amplifying structure, namely a switching tube M12 and a switching tube M13 respectively adopt p-type transistors, and the switching tube M12 is a p-type current source load.
It should be noted that, the second, third, fourth and fifth exemplary embodiments are basically the same as the pixel circuit in the first exemplary embodiment, and therefore are not described in detail.
In one embodiment, as shown in fig. 8, a high sharpness detector is proposed, which includes an array device 1 composed of a plurality of pixel circuit arrangements, at least one signal driving unit 2, and a detecting unit 3; the at least one signal driving unit 2 is connected with each pixel circuit and is used for outputting a first current control signal and a line scanning signal; the detection unit 3 is connected with each pixel circuit and is used for providing a power supply end and receiving detection signals.
Specifically, the pixel arrays are unfolded in a certain range in a close-packed mode, and row scanning signals of different rows of the pixel arrays are not connected with each other. All direct current high potential signals in the array are connected together through transverse and longitudinal wires, and the direct current high potential signal VDD is provided for the array through the detection unit. The detection units form constant currents with equal values for the voltage dividing branches by controlling the current control units of all pixel units; the detection units control the current control units of all pixel units through the connection points, and form constant currents with equal values for the voltage dividing branches; the output ends of the output switch units in the same column of the pixel array are connected together, and the detection units sequentially detect detection signals output by all pixel circuits through rows; the detection signals output by different columns of the pixel array have no connection relation.
In this embodiment, the first current control signal and the row scanning signal are generated by signal driving units distributed on the left and right sides, and are connected into the arrayed pixel circuits through transverse wiring. The constant voltage direct current high level VDD is generated by a detection unit (or a related constant voltage unit), enters the array device through a bottom wiring, is connected with each other through a transverse wiring in an array area, and has a stroke net-shaped design structure, so that the voltage drop of a VDD signal can be effectively reduced; the ground potential is connected together through the whole surface evaporation electrode mode, and the voltage drop of relevant nodes can be effectively reduced by adopting materials with smaller sheet resistance, so that the performance of the circuit is improved. The detection signals are output to the detection units through longitudinal wiring, the detection signals output by each column are simultaneously connected to the same signal, the opening and closing of each row of pixel circuits are controlled through related row scanning signals, and the detection signals are sequentially and independently input to the detection units. The detection unit is embedded into the array device in a heterogeneous connection mode and is connected with related signals.
The high sharpness detector can effectively realize sensing and calculation integration, reduce the post-stage data processing pressure and reduce the requirements on an external system; a thin film transistor process can be adopted, and a foundation is provided for flexible development.
In an embodiment, as shown in fig. 9-10, a control method of a high sharpness detector is provided, which is applied to the high sharpness detector described in the above embodiment, and the method includes:
s102: in a detection stage, sequentially providing a first current control signal and a row scanning signal for each row of pixel circuits in an array device according to a specific switching sequence so as to control the row scanning switching unit and the output switching unit to be in a linear state, wherein the current control unit, the load unit and the voltage amplifying unit are in a saturated state;
s104: and receiving detection signals output by each row of pixel circuits in turn.
For specific limitations on the control method, reference may be made to the definition of a high sharpness detector above, and no further description is given here.
Those skilled in the art will appreciate that implementing all or part of the above-described methods may be accomplished by way of a computer program, which may be stored on a non-transitory computer readable storage medium and which, when executed, may comprise the steps of the above-described embodiments of the methods. Any reference to memory, storage, database, or other medium used in embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, or the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory. By way of illustration, and not limitation, RAM can be in the form of a variety of forms, such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), and the like.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples represent only a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (8)
1. The pixel circuit of the high sharpness detector is characterized by comprising a voltage division branch circuit consisting of a photosensitive detection unit, a line scanning switch unit and a current control unit, an amplifying branch circuit consisting of a load unit and a voltage amplifying unit and an output switch unit; the photosensitive detection unit, the line scanning switch unit and the current control unit are sequentially connected between a power supply end and the public ground, the load unit and the voltage amplifying unit are sequentially connected between the power supply end and the public ground, the voltage dividing branch is connected with the amplifying branch, and the output switch unit is connected with the midpoints of the load unit and the voltage amplifying unit; the line scanning switch unit comprises a switch tube M2, the current control unit comprises a switch tube M3, a grid electrode of the switch tube M2 is connected with a line scanning signal, a source electrode of the switch tube M2 is connected with a drain electrode of the switch tube M3, the drain electrode of the switch tube M2 is connected with one end of the photosensitive detection unit, a grid electrode of the switch tube M3 is connected with a first current control signal, and a source electrode of the switch tube M3 is connected with a public ground; the load unit comprises a switching tube M1, the voltage amplifying unit comprises a switching tube M4, a grid electrode and a drain electrode of the switching tube M1 are connected with a power supply end, a source electrode of the switching tube M1 is connected with the drain electrode of the switching tube M4, a grid electrode of the switching tube M4 is connected with the drain electrode of the switching tube M3, and a source electrode of the switching tube M4 is connected with a public ground;
in the detection stage, the current control unit receives a first current control signal, the line scanning switch unit and the output switch unit receive a line scanning signal, the voltage division branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit;
the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state.
2. The circuit of claim 1, wherein the output switching unit includes a switching tube M5, a gate of the switching tube M5 is connected to a row scan signal, a drain of the switching tube M5 is connected to a midpoint of the load unit and the voltage amplifying unit, and a source of the switching tube M5 outputs a detection signal.
3. The pixel circuit of the high sharpness detector is characterized by comprising a voltage division branch circuit consisting of a photosensitive detection unit, a line scanning switch unit and a current control unit, an amplifying branch circuit consisting of a load unit and a voltage amplifying unit and an output switch unit; the photosensitive detection unit, the line scanning switch unit and the current control unit are sequentially connected between a power supply end and the public ground, the load unit and the voltage amplifying unit are sequentially connected between the power supply end and the public ground, the voltage dividing branch is connected with the amplifying branch, and the output switch unit is connected with the midpoints of the load unit and the voltage amplifying unit; the line scanning switch unit comprises a switch tube M2, the current control unit comprises a switch tube M3, a grid electrode of the switch tube M2 is connected with a line scanning signal, a source electrode of the switch tube M2 is connected with a drain electrode of the switch tube M3, the drain electrode of the switch tube M2 is connected with one end of the photosensitive detection unit, a grid electrode of the switch tube M3 is connected with a first current control signal, and a source electrode of the switch tube M3 is connected with a public ground; the load unit comprises a switch tube M6, the voltage amplifying unit comprises a switch tube M7, a grid electrode of the switch tube M6 is connected with a second current control signal, a drain electrode of the switch tube M6 is connected with a power supply end, a source electrode of the switch tube M6 is connected with a drain electrode of the switch tube M7, a grid electrode of the switch tube M7 is connected with a drain electrode of the switch tube M3, and a source electrode of the switch tube M7 is connected with a public ground;
in the detection stage, the current control unit receives a first current control signal, the line scanning switch unit and the output switch unit receive a line scanning signal, the voltage division branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit;
the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state.
4. The pixel circuit of the high sharpness detector is characterized by comprising a voltage division branch circuit consisting of a photosensitive detection unit, a line scanning switch unit and a current control unit, an amplifying branch circuit consisting of a load unit and a voltage amplifying unit and an output switch unit; the photosensitive detection unit, the line scanning switch unit and the current control unit are sequentially connected between a power supply end and the public ground, the load unit and the voltage amplifying unit are sequentially connected between the power supply end and the public ground, the voltage dividing branch is connected with the amplifying branch, and the output switch unit is connected with the midpoints of the load unit and the voltage amplifying unit; the line scanning switch unit comprises a switch tube M2, the current control unit comprises a switch tube M3, a grid electrode of the switch tube M2 is connected with a line scanning signal, a source electrode of the switch tube M2 is connected with a drain electrode of the switch tube M3, the drain electrode of the switch tube M2 is connected with one end of the photosensitive detection unit, a grid electrode of the switch tube M3 is connected with a first current control signal, and a source electrode of the switch tube M3 is connected with a public ground; the load unit comprises a switch tube M8, the voltage amplifying unit comprises a switch tube M9, the grid electrode of the switch tube M8 is connected with the drain electrode, the source electrode of the switch tube M8 is connected with the power supply end, the drain electrode of the switch tube M8 is connected with the drain electrode of the switch tube M9, the grid electrode of the switch tube M9 is connected with the drain electrode of the switch tube M3, and the source electrode of the switch tube M9 is connected with the public ground;
in the detection stage, the current control unit receives a first current control signal, the line scanning switch unit and the output switch unit receive a line scanning signal, the voltage division branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit;
the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state.
5. The pixel circuit of the high sharpness detector is characterized by comprising a voltage division branch circuit consisting of a photosensitive detection unit, a line scanning switch unit and a current control unit, an amplifying branch circuit consisting of a load unit and a voltage amplifying unit and an output switch unit; the photosensitive detection unit, the line scanning switch unit and the current control unit are sequentially connected between a power supply end and the public ground, the load unit and the voltage amplifying unit are sequentially connected between the power supply end and the public ground, the voltage dividing branch is connected with the amplifying branch, and the output switch unit is connected with the midpoints of the load unit and the voltage amplifying unit; the line scanning switch unit comprises a switch tube M2, the current control unit comprises a switch tube M3, a grid electrode of the switch tube M2 is connected with a line scanning signal, a source electrode of the switch tube M2 is connected with a drain electrode of the switch tube M3, the drain electrode of the switch tube M2 is connected with one end of the photosensitive detection unit, a grid electrode of the switch tube M3 is connected with a first current control signal, and a source electrode of the switch tube M3 is connected with a public ground; the load unit comprises a switch tube M10, the voltage amplifying unit comprises a switch tube M11, a grid electrode of the switch tube M10 is connected with a drain electrode of the switch tube M3, a source electrode of the switch tube M10 is connected with a power supply end, a drain electrode of the switch tube M10 is connected with a drain electrode of the switch tube M11, a grid electrode of the switch tube M11 is connected with the drain electrode, and the drain electrode of the switch tube M11 is connected with a public ground;
in the detection stage, the current control unit receives a first current control signal, the line scanning switch unit and the output switch unit receive a line scanning signal, the voltage division branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit;
the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state.
6. The pixel circuit of the high sharpness detector is characterized by comprising a voltage division branch circuit consisting of a photosensitive detection unit, a line scanning switch unit and a current control unit, an amplifying branch circuit consisting of a load unit and a voltage amplifying unit and an output switch unit; the photosensitive detection unit, the line scanning switch unit and the current control unit are sequentially connected between a power supply end and the public ground, the load unit and the voltage amplifying unit are sequentially connected between the power supply end and the public ground, the voltage dividing branch is connected with the amplifying branch, and the output switch unit is connected with the midpoints of the load unit and the voltage amplifying unit; the line scanning switch unit comprises a switch tube M2, the current control unit comprises a switch tube M3, a grid electrode of the switch tube M2 is connected with a line scanning signal, a source electrode of the switch tube M2 is connected with a drain electrode of the switch tube M3, the drain electrode of the switch tube M2 is connected with one end of the photosensitive detection unit, a grid electrode of the switch tube M3 is connected with a first current control signal, and a source electrode of the switch tube M3 is connected with a public ground; the load unit comprises a switch tube M12, the voltage amplifying unit comprises a switch tube M13, a grid electrode of the switch tube M12 is connected with a drain electrode of the switch tube M3, a source electrode of the switch tube M12 is connected with a power supply end, a drain electrode of the switch tube M12 is connected with a drain electrode of the switch tube M13, a grid electrode of the switch tube M13 is connected with a third current control signal, and a drain electrode of the switch tube M13 is connected with a public ground;
in the detection stage, the current control unit receives a first current control signal, the line scanning switch unit and the output switch unit receive a line scanning signal, the voltage division branch circuit controls the amplifying branch circuit to output an amplifying signal, and the detecting signal is output through the output switch unit;
the line scanning switch unit and the output switch unit are in a linear state, and the current control unit, the load unit and the voltage amplifying unit are in a saturated state.
7. A high sharpness detector comprising an array arrangement of a plurality of pixel circuit arrangements according to any of claims 1 to 6, at least one signal driving unit and a detection unit;
the at least one signal driving unit is connected with each pixel circuit and is used for outputting a first current control signal and a line scanning signal;
the detection unit is connected with each pixel circuit and is used for providing a power supply end and receiving detection signals.
8. A control method of a high sharpness detector according to claim 7, characterized in that the method comprises:
in a detection stage, sequentially providing a first current control signal and a row scanning signal for each row of pixel circuits in an array device according to a specific switching sequence so as to control the row scanning switching unit and the output switching unit to be in a linear state, wherein the current control unit, the load unit and the voltage amplifying unit are in a saturated state;
and receiving detection signals output by each row of pixel circuits in turn.
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