CN117165912B - Method and system for monitoring magnetron sputtering chamber data - Google Patents
Method and system for monitoring magnetron sputtering chamber data Download PDFInfo
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 206
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000012544 monitoring process Methods 0.000 title claims abstract description 32
- 238000005070 sampling Methods 0.000 claims abstract description 434
- 238000001514 detection method Methods 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 21
- 238000007789 sealing Methods 0.000 claims abstract description 10
- 238000002955 isolation Methods 0.000 claims description 30
- 238000007639 printing Methods 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 9
- 238000005086 pumping Methods 0.000 claims description 8
- 230000033001 locomotion Effects 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 238000000576 coating method Methods 0.000 abstract description 27
- 239000011248 coating agent Substances 0.000 abstract description 22
- 239000000523 sample Substances 0.000 description 66
- 239000000758 substrate Substances 0.000 description 30
- 230000007246 mechanism Effects 0.000 description 22
- 239000007789 gas Substances 0.000 description 18
- 238000003860 storage Methods 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 238000011084 recovery Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 210000001503 joint Anatomy 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000004804 winding Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
The invention discloses a method and a system for monitoring data of a magnetron sputtering chamber, and relates to the technical field of magnetron sputtering coating. The method comprises the following steps: data sampling of magnetron sputtering is carried out by arranging sampling points in the magnetron sputtering chamber; after forming a vacuum chamber, sampling according to the magnetron sputtering process, and placing the sampled sample into a relay bin, wherein a conveying channel is arranged on the magnetron sputtering chamber corresponding to the relay bin; controlling the interface of the conveying channel and the magnetron sputtering chamber to be closed so as to form a sealing channel; after vacuumizing the conveying channel, controlling the relay bin to move in the conveying channel so as to move the sampling sample out of the magnetron sputtering chamber; after the corresponding detection is completed, the control relay bin returns to the magnetron sputtering chamber again through the conveying channel. According to the invention, sampling can be controlled according to the magnetron sputtering process, and the sampled sample is moved out of the magnetron sputtering chamber in real time for detection, so that the real-time performance and the accuracy of the vacuum chamber data monitoring are considered.
Description
Technical Field
The invention relates to the technical field of magnetron sputtering coating, in particular to a method and a system for monitoring data of a magnetron sputtering chamber.
Background
Sputtering film coating refers to a technology of forming a film by depositing sputtered target particles on the surface of a substrate by bombarding the surface of the target material with particles with a function under a vacuum condition to enable atoms on the surface of the target material to obtain enough energy to escape, and belongs to physical vapor deposition PVD film forming. The incident ions in the sputtering coating are generally obtained by low-pressure inert gas glow discharge, and the sputtered particles are easy to collide with gas molecules in the vacuum chamber in the process of flying to the substrate, so that the movement direction is random, and the deposited film is easy to be uniform. The magnetron sputtering coating film further introduces a magnetic field on the surface of the target cathode, the plasma density is improved by utilizing the constraint of the magnetic field on the charged particles so as to increase the sputtering rate, and the magnetron sputtering can conveniently coat the materials in the target material in a vapor deposition mode. Along with the development of the magnetron sputtering technology, the existing large-scale magnetron sputtering coating device has great development in the aspects of deposition growth rate, film adhesion, process repeatability, winding coating and continuous processing of a substrate. Magnetron sputtering is widely used for film formation in display screens, semiconductor fields and optical fields.
In the production process of magnetron sputtering coating, the magnetron sputtering process in the magnetron sputtering chamber is often required to be monitored so as to record the coating process and ensure the coating quality, and the coating process in the magnetron sputtering chamber can be controlled and adjusted (controllability and adjustability) according to monitoring information when needed, so that the coating precision and the coating effect are improved. The monitoring of the magnetron sputtering chamber is important to the production control and the improvement of the product quality. Currently, magnetron sputtering monitoring schemes commonly adopted in the industry are divided into two types: the first monitoring scheme is to install the relevant magnetron sputtering coating monitoring device in the magnetron sputtering chamber according to the data to be monitored; after the film plating is started, monitoring/sampling the chamber by a magnetron sputtering film plating monitoring device in the chamber; and taking out the monitoring sheet/sampling sample after coating, and measuring the relevant parameters of the monitoring sheet/sampling sample. The second monitoring scheme is to use sensor technology to install one or more sensor probes (such as optical fiber probes for specific spectrum detection) in the magnetron sputtering chamber to monitor magnetron sputtering data, such as analyzing the state of the reaction gas in the chamber, and the sensor probes can also generate optical signals and/or electrical signals representing the measurement result, and can also adjust the reaction gas in the chamber according to the analysis result when necessary. The magnetron sputtering coating data monitoring technology using the sensor technology can refer to the technical schemes disclosed in patent applications with publication numbers CN104584184A and CN 110592542A.
For the first monitoring scheme described above, there are the following drawbacks: in order to ensure that the magnetron sputtering chamber is in a high vacuum state, a monitoring sheet/sampling sample can be taken out only when the whole coating process is finished, the chamber environment data in the magnetron sputtering process can not be timely obtained, the process reproduction is difficult to carry out when the problem of product quality occurs in the later stage, and the controllability and the adjustability of the magnetron sputtering process are affected. For the second monitoring scheme described above, there are the following drawbacks: the scheme is to directly detect and measure in the magnetron chamber, and although the real-time performance of magnetron sputtering data monitoring is achieved, various particles in the magnetron sputtering chamber are considered to be diffused, and various particles possibly adhere to the sensor probe in the magnetron sputtering chamber to influence the detection of the sensor probe, so that the obtained measurement result cannot truly reflect the actual situation, and the accuracy is still insufficient.
Disclosure of Invention
The invention aims at: overcomes the defects of the prior art and provides a method and a system for monitoring magnetron sputtering chamber data. According to the magnetron sputtering chamber data monitoring scheme provided by the invention, sampling points in the magnetron sputtering chamber can be controlled to sample according to the magnetron sputtering process, the obtained sampling samples are placed in the relay bin, then the sampling samples are timely moved out of the magnetron sputtering chamber through the relay bin conveying channel to carry out corresponding detection, the sampling samples are detected outside the magnetron sputtering chamber, the interference of various particles in the magnetron sputtering chamber is avoided, and the real-time performance and the accuracy of the vacuum chamber data monitoring are considered.
In order to achieve the above object, the present invention provides the following technical solutions:
a method of magnetron sputtering chamber data monitoring comprising the steps of:
arranging sampling points in the magnetron sputtering chamber, wherein the sampling points are used for performing data sampling of magnetron sputtering to obtain sampling samples;
the magnetron sputtering chamber is subjected to sealing and vacuumizing treatment to form a vacuum chamber;
according to the magnetron sputtering process, sampling by a sampling point is controlled, the obtained sampling sample is placed in a relay bin, and a conveying channel is arranged on a magnetron sputtering chamber corresponding to the relay bin; controlling the connection between the conveying channel and the magnetron sputtering chamber to be closed so as to form a sealing channel isolated from the inside of the magnetron sputtering chamber;
after the vacuum pumping treatment is carried out on the conveying channel, the relay bin is controlled to move in the conveying channel so as to move the sampling sample out of the magnetron sputtering chamber through the relay bin; and after the corresponding detection is finished, controlling the relay bin to return to the magnetron sputtering chamber again through the conveying channel.
Further, the step of controlling the relay bin to return to the magnetron sputtering chamber again through the conveying channel comprises the following steps:
under the condition that the conveying channel is judged to be sealed, purifying and vacuumizing the conveying channel and a relay bin in the conveying channel;
After the vacuumizing treatment is finished, controlling the opening of the interface between the conveying channel and the magnetron sputtering chamber so as to enable the conveying channel to be communicated with the inside of the magnetron sputtering chamber;
and controlling the relay bin to move in the conveying channel so as to move the relay bin to the position of the sampling point in the magnetron sputtering chamber.
Further, the conveying channel penetrates through the cavity wall of the magnetron sputtering cavity and is at least partially positioned inside the magnetron sputtering cavity, and the conveying channel comprises an internal interface and an external interface; the inner interface end of the conveying channel is connected with the inside of the magnetron sputtering chamber through a first isolation valve, and the first isolation valve is used for isolating or communicating the conveying channel with the inner space of the magnetron sputtering chamber; the outer interface end of the conveying channel is externally connected with the magnetron sputtering chamber through a second isolation valve, and the second isolation valve is used for isolating or communicating the conveying channel with an external environment space;
when the conveying channel is required to be vacuumized, the first isolation valve and the second isolation valve are controlled to close the corresponding interfaces.
Further, the sampling mode of the sampling points is one of the following modes:
in a first mode, corresponding to the areas to be sampled, sampling devices are respectively arranged in each area to perform sampling operation in the corresponding area;
Secondly, arranging strip-type sampling devices corresponding to the areas to be sampled, wherein sampling strip lines of the sampling devices are continuously distributed in a magnetron sputtering chamber along a preset direction;
in a third mode, a sampling device capable of movably sampling is arranged in the magnetron sputtering chamber, the sampling device comprises a sampling arm, and the sampling arm is controlled to flexibly sample corresponding to an area needing to be sampled.
Further, a multidirectional rotary sampling device is arranged at the sampling point and comprises a mounting seat, a plurality of sampling execution parts are arranged on the front surface of the mounting seat in a circumferential array, and the mounting seat can rotate along a central rotating shaft to drive the sampling execution parts to rotate together; meanwhile, each sampling execution part is in sliding connection with the mounting seat, so that the sampling execution parts can do telescopic movement relative to the mounting seat, and are close to or far away from the mounting seat;
when sampling, according to the region position to be sampled, after the multi-azimuth rotary sampling device is controlled to rotate, one or more sampling execution parts are controlled to stretch and retract relative to the mounting seat so as to enter the corresponding region position for sampling, and sampling region information and sampling time information of each sampling execution part are recorded.
Further, the relay bin is provided with sampling data information, and the sampling data information is used for recording sampling area information and sampling time information of the sampling operation;
the sampling area information comprises the position information of the sampling area in the magnetron sputtering chamber;
the sampling time information comprises sampling start time, sampling end time and magnetron sputtering operation stage to which the sampling time period belongs.
The sampling point is provided with a relay bin stop position, a sampling execution part, an imaging part and a printing part, and the sampling execution part, the imaging part and the printing part are connected with a sampling control part and receive the control of the sampling control part;
the sampling execution part is used for carrying out sampling operation in the magnetron sputtering chamber to obtain a sampling sample and placing the sampling sample into a relay bin positioned at the stop position of the relay bin;
the image pickup part is used for shooting image data of a current sampling area and transmitting the image data to an associated image recognition device for recognition so as to acquire sampling area information;
the printing part is used for carrying out the printing operation of the sampling data information corresponding to the relay bin of the relay bin stop bit.
Further, the relay bin stop positions can accommodate a plurality of relay bin stops, the head ends of the relay bin stop positions are connected with the conveying channel, and when the interface between the conveying channel and the magnetron sputtering chamber is opened, the relay bin can move to the relay bin stop positions from the conveying channel through the interface to stop or move to the conveying channel from the relay bin stop positions to transmit; at this time, the plurality of relay bins are sequentially parked on the relay bin parking position, and the first relay bin at the head end of the relay bin parking position is the current sampling relay bin for placing the sampling sample of the current sampling operation.
Further, the sampling control section is configured to:
according to the current sampling operation executed by the sampling execution part, after the current sampling operation is finished, acquiring corresponding sampling time information, acquiring image data and/or identified sampling area information shot by the shooting part, and integrating the acquired information to acquire sampling data information of the current sampling operation; the method comprises the steps of,
printing the obtained sampling data information on the outer surface of the current sampling relay bin, wherein the outer surface of the relay bin is a material suitable for information printing; or,
Printing the obtained sampling data information on a attachable carrier, and attaching the attachable carrier to the outer surface of the current sampling relay bin; or,
and carrying out digital coding processing on the obtained sampling data information to generate a corresponding digital code, and printing or pasting the digital code on the outer surface of the current sampling relay bin.
The invention also provides a magnetron sputtering chamber data monitoring system, which comprises:
the sampling points are distributed in the magnetron sputtering cavity and are used for performing data sampling of magnetron sputtering to obtain sampling samples; a relay bin is arranged corresponding to the sampling point, and a conveying channel is arranged on the magnetron sputtering chamber corresponding to the relay bin;
a sampling control section configured to: according to the magnetron sputtering process, controlling sampling points to sample and placing the obtained sampled samples into the relay bin, and then controlling the interface between the conveying channel and the magnetron sputtering chamber to be closed so as to form a sealing channel isolated from the inside of the magnetron sputtering chamber; after the vacuum pumping treatment is carried out on the conveying channel, the relay bin is controlled to move in the conveying channel so as to move the sampling sample out of the magnetron sputtering chamber through the relay bin; and after the corresponding detection is finished, controlling the relay bin to return to the magnetron sputtering chamber again through the conveying channel.
Compared with the prior art, the invention has the following advantages and positive effects by taking the technical scheme as an example: according to the magnetron sputtering chamber data monitoring scheme provided by the invention, sampling points in the magnetron sputtering chamber can be controlled to sample according to the magnetron sputtering process, the obtained sampling samples are placed in the relay bin, then the sampling samples are timely moved out of the magnetron sputtering chamber through the relay bin conveying channel to carry out corresponding detection, the sampling samples are detected outside the magnetron sputtering chamber, the interference of various particles in the magnetron sputtering chamber is avoided, and the real-time performance and the accuracy of the vacuum chamber data monitoring are considered.
Drawings
Fig. 1 is a schematic structural diagram of a layout of sampling points in a magnetron sputtering chamber according to an embodiment of the present invention.
Fig. 2 is a flowchart of a magnetron sputtering chamber data monitoring method according to an embodiment of the invention.
Fig. 3 is a schematic diagram of an operation of placing a sampling sample into a relay bin according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a sealed channel formed by a closed conveying channel according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of moving a sampled relay bin out of a conveying channel according to an embodiment of the present invention.
Fig. 6 is a schematic diagram of a conveying channel structure for conveying a plurality of relay bins according to an embodiment of the present invention.
Fig. 7 is a schematic structural diagram of a sampling arm according to an embodiment of the present invention.
Reference numerals illustrate:
a magnetron sputtering chamber 100, a chamber wall 110, an exhaust mechanism 120, a vacuum pump 121, a gas supply mechanism 130, and a gas supply portion 131;
a substrate 200;
a target 300;
sampling point 400, sampling sample 410, sampling device 420, multi-degree-of-freedom mechanical arm 421, sampling part 422, sampling hole 4221, sampling sheet 4222, sampling sheet transport structure 4223, sampling sheet storage chamber 4224, image pickup part 4225, printing part 4226;
a relay bin 500, a bin gate 510;
a transfer tunnel 600, a first isolation valve 610, a second isolation valve 620, and a transfer tunnel evacuation system 630.
Detailed Description
The method and system for magnetron sputtering chamber data monitoring disclosed by the invention are further described in detail below with reference to the accompanying drawings and specific examples. It is noted that techniques (including methods and apparatus) known to those of ordinary skill in the relevant art may not be discussed in detail, but are considered to be part of the specification where appropriate. Meanwhile, other examples of the exemplary embodiment may have different values. The structures, proportions, sizes, etc. shown in the drawings are shown only in connection with the present disclosure for purposes of understanding and reading by those skilled in the art and are not intended to limit the scope of the invention.
In the description of the embodiment of the present application, "/" means "and/or" is used to describe the association relationship of the association object, which means that three relationships may exist, for example, "a and/or b" means: there are three cases of A and B separately. In the description of the embodiments of the present application, "plurality" means two or more.
Hereinafter, the technical concept and the scheme of the present invention will be described according to an exemplary application scenario.
Examples
Referring to fig. 1, a typical structure of a magnetron sputtering apparatus is illustrated. The magnetron sputtering apparatus includes a housing for performing a magnetron sputtering coating operation, and a magnetron sputtering chamber 100 is formed in the housing. The housing may have various shapes, such as, by way of example and not limitation, a housing having a circular, triangular, square, or rectangular cross-section. In a preferred embodiment, the housing is cylindrical, circular in cross-section and rectangular in cross-section. The specific size of the housing can be adaptively selected according to the actual coating requirements. The housing may be formed of a metallic material such as stainless steel, and the housing may be grounded. The enclosure further includes a cover that seals the enclosure during a magnetron sputtering operation. During magnetron sputtering operations, the enclosure may be maintained under vacuum-for example, the enclosure may be maintained under vacuum with the aid of a gas pumping system.
As shown in fig. 1, an exhaust mechanism 120 is provided in the magnetron sputtering chamber 100 (housing), and the exhaust mechanism 120 includes a valve provided in a chamber wall of the magnetron sputtering chamber, and a vacuum pump 121 (provided outside the magnetron sputtering chamber) connected to the valve, and the inside of the magnetron sputtering chamber is exhausted by the exhaust mechanism 120 to be a vacuum atmosphere of a desired pressure.
A gas supply mechanism 130 is further provided on the magnetron sputtering chamber 100 (housing), and the gas supply mechanism 130 includes a gas inlet pipe, and a gas supply part 131 (provided outside the magnetron sputtering chamber) connected to the gas inlet pipe. The gas supply part 131 supplies an inert gas such as argon Ar or the like required for the magnetron sputtering chamber 100. In the present embodiment, the gas supply unit 131 is an argon gas supply unit, and the argon gas supply unit may include a supply source of Ar gas as a gas for forming plasma, a mass flow controller, a valve, and the like, and is configured to be capable of outputting a desired flow rate of Ar gas to an intake pipe, and supplying the Ar gas into the magnetron sputtering chamber 100 through the intake pipe.
The magnetron sputtering chamber 100 is provided with a base material 200 and a target 300.
The substrate 200 is preferably a removable substrate. Specifically, a substrate unreeling mechanism and a substrate reeling mechanism can be provided corresponding to the substrate 200, the substrate unreeling mechanism and the substrate reeling mechanism can both adopt roller shaft structures, the substrate unreeling mechanism is used for installing a substrate coiled material and unwinding the coiled material, and the substrate reeling mechanism is used for winding the unwound flexible substrate to form the coiled material. The flexible substrate to be coated is unfolded between the substrate unreeling mechanism and the substrate reeling mechanism, and the unfolded substrate section is positioned in the vacuum coating chamber and is subjected to magnetron sputtering coating process treatment in the vacuum coating chamber. When coating film, the substrate unreeling mechanism and the substrate reeling mechanism unreel and reel synchronously, so as to realize reeling coating film.
The target 300 serves as a sputtering source for generating target atoms. Specifically, the target is made of a coating material, the target is used as a cathode (also called a cathode target) in a magnetron sputtering process, the substrate is used as an anode, argon is introduced into a vacuum chamber, the cathode target is connected with a power supply (not shown in the figure), and ionized argon ions (Ar+) are used for bombarding the surface of the target in the vacuum chamber, so that target atoms are sputtered and deposited on the substrate to form a film.
It should be noted that the target arrangement illustrated in fig. 1 is by way of example and not limitation, and a rotatable magnetron sputtering target may be used, and a target magnetron may be used. The specific arrangement of the target and the substrate in the magnetron sputtering coating process, and the deposition, regulation and control of the gas in the vacuum chamber can refer to the prior art, and are not repeated here.
The invention aims at improving the existing magnetron sputtering coating scheme on the monitoring of chamber data, and provides a scheme for sampling in the magnetron sputtering chamber 100 in real time and transmitting a sampled sample to the outside of the magnetron sputtering chamber 100 at any time for detection.
Referring to fig. 2, a method for monitoring data of a magnetron sputtering chamber provided by the invention comprises the following steps.
And S100, distributing sampling points in the magnetron sputtering chamber, wherein the sampling points are used for performing data sampling of magnetron sputtering to obtain sampling samples.
S200, sealing and vacuumizing the magnetron sputtering chamber to form a vacuum chamber.
S300, controlling sampling points to sample according to a magnetron sputtering process, and placing the obtained sampled samples into a relay bin, wherein a conveying channel is arranged on a magnetron sputtering chamber corresponding to the relay bin; and controlling the interface between the conveying channel and the magnetron sputtering chamber to be closed so as to form a sealing channel isolated from the inside of the magnetron sputtering chamber.
And S400, after the vacuum pumping treatment is carried out on the conveying channel, controlling the relay bin to move in the conveying channel so as to move the sampling sample out of the magnetron sputtering chamber through the relay bin.
S500, after the corresponding detection is completed, the relay bin is controlled to return to the magnetron sputtering chamber again through the conveying channel.
In this embodiment, the manner of detecting the sampled sample in the relay bin may be to directly set a sample detection device in the foregoing conveying channel, and perform corresponding test or measurement on the sampled sample in the relay bin by using the sample detection device; the special detection cavity can be arranged at the external interface end of the conveying channel, the detection cavity is internally provided with a sample detection device, and after the relay bin enters the detection cavity through the conveying channel, the sample detection device in the detection cavity is used for testing or measuring the sampled sample in the relay bin. Preferably, a special detection cavity is arranged.
The sample detection device may be used to test or measure the sampled sample, or may be used to test or measure the sampled sample after the sampled sample is taken out of the relay bin, or may be used to test or measure the sampled sample after the sample detection device extends the probe into the relay bin, which is not limited herein.
In step S500 in this embodiment, the specific steps of controlling the relay bin to return to the magnetron sputtering chamber through the conveying channel are as follows: s510, under the condition that the conveying channel is sealed, purifying and vacuumizing the conveying channel and a relay bin in the conveying channel; s520, after the vacuumizing treatment is finished, controlling the interface between the conveying channel and the magnetron sputtering chamber to be opened so as to enable the conveying channel to be communicated with the inside of the magnetron sputtering chamber; and S530, controlling the relay bin to move in the conveying channel so as to move the relay bin to the sampling point position in the magnetron sputtering chamber. When the relay bin returns to the magnetron sputtering chamber again, the conveying channel and the relay bin are required to be purified and vacuumized, so that the pollution of the conveying channel and the relay bin to the magnetron sputtering environment of the magnetron sputtering chamber or the influence on the high vacuum environment of the magnetron sputtering chamber is avoided.
With continued reference to FIG. 1, a magnetron sputtering chamber is illustrated in which a sampling point 400 is provided. It should be noted that, although only one sampling point is illustrated in fig. 1, it should be understood by those skilled in the art that, depending on the magnetron sputtering area focused by the user, a plurality of sampling points 400 may be disposed in the magnetron sputtering chamber 100, for example, a sampling point may be disposed near the target, a sampling point may be disposed between the target and the substrate, and a sampling point may be disposed near the coating surface of the substrate.
A relay bin 500 and a conveyance path 600 are provided corresponding to the sampling point 400. According to the requirement, a conveying channel can be arranged at one sampling point, namely, the sampling points are arranged in one-to-one correspondence with the conveying channels; a single transport channel may be shared by a plurality of sampling points, and is not limited herein. When a plurality of sampling points share a conveying channel, a connecting channel which is in butt joint with the conveying channel can be arranged in the magnetron sputtering chamber for each sampling point, and the relay bin filled with the sample can be conveyed into the conveying channel through the connecting channel. Of course, those skilled in the art will appreciate that the arrangement of the connecting channel should not affect the magnetron sputtering coating operation.
The relay bin 500 is used for placing a sampled sample obtained by sampling. Specifically, referring to fig. 3, after sampling is completed, the sampling device 420 in the sampling point 400 may place the sampled sample 410 into the relay bin 500. After the sampling sample 410 is placed in the relay bin 500, the bin gate 510 of the relay bin 500 can be controlled to be closed (an automatic bin gate opening and closing system is arranged corresponding to the bin gate 510), so that the sampling sample is hermetically stored through the relay bin.
The conveying channel 600 is used for conveying the relay bin out of or into the magnetron sputtering chamber.
The conveying passage 600 of the present embodiment may specifically adopt the following structure: the transfer passage 600 extends through the chamber wall 110 of the magnetron sputtering chamber 100 and is at least partially located inside the magnetron sputtering chamber 100, the transfer passage 600 comprising an internal interface and an external interface. The inner interface end of the conveying channel 600 may be connected to the inside of the magnetron sputtering chamber 100 through a first isolation valve 610, where the first isolation valve 610 is used to isolate or communicate the conveying channel 600 with the inner space of the magnetron sputtering chamber 100. The external interface end of the conveying channel 600 may be connected to the outside of the magnetron sputtering chamber 100 through a second isolation valve 620, where the second isolation valve 620 is used to isolate or communicate the conveying channel with the external environment space. When the vacuum pumping process is required to be performed on the conveying channel, the first isolation valve 610 and the second isolation valve 620 may be controlled to close the corresponding internal interface and the corresponding external interface, respectively, so that the conveying channel 600 becomes a closed and sealed space. Then, the conveyance path 600 is subjected to a vacuum process by the conveyance path vacuum system 630.
By way of example and not limitation, the first isolation valve 610 may be in an open (or "on") state and the second isolation valve 620 may be in a closed state during sampling, the transfer passage 600 may be in communication with the magnetron sputtering chamber 100 and isolated from the external environment, and the internal space relay compartment 500 may be located in the transfer passage 600 and located at the first isolation valve 610. After the sampling is completed, the sampling device 420 may directly put the sampled sample 410 into the relay bin 500 with the bin gate opened, and then control the bin gate of the relay bin 500 to be closed. Then, the first isolation valve 610 is controlled to be closed, and at this time, the transfer passage 600 becomes a closed and sealed space, as shown in fig. 4; after the vacuum process is performed on the transfer channel 600, the relay bin is controlled to move in the transfer channel to move the sampled sample out of the magnetron sputtering chamber through the relay bin 500.
When the relay bin 500 moves to the position of the second isolation valve 620, the second isolation valve 620 may be controlled to open, as shown in fig. 5, and the relay bin 500 is controlled to move into a dedicated detection chamber (not shown), and the sample sampled in the relay bin is tested or measured by the sample detection device in the detection chamber. The sampling and transmission process of the sampling sample can not influence the air tightness of the magnetron sputtering chamber 100, and meanwhile, the detection of the sampling sample outside the magnetron sputtering chamber 100 is realized, so that the interference of various particles in the magnetron sputtering chamber on the detection/measurement is avoided compared with the mode of directly detecting/measuring in the magnetron sputtering chamber.
Referring to fig. 6, in the present embodiment, the conveying path 600 may accommodate a plurality of relay bins 500 and may simultaneously convey (send out/send in) the plurality of relay bins as needed.
At this time, preferably, a relay bin storage channel may be provided corresponding to the sampling point 400, where the relay bins in the relay bin storage channel are empty relay bins and are arranged in a row, and after a sampling operation is completed, the sampling device 420 may place a sampled sample obtained by sampling in an empty relay bin arranged at the first position, such as a relay bin A1, and after the relay bin A1 is filled with the sampled sample, the sampled sample is conveyed to the conveying channel 600 to be the first sampled relay bin B1 in the conveying channel 600. While the relay bin A1 leaves from the relay bin storage channel, the empty relay bins arranged behind the relay bin A1 in the relay bin storage channel sequentially move forward by one bin space, and at the moment, the empty relay bin arranged at the first position is the relay bin A2. After the second sampling operation is completed, the sampling device 420 may place the sampled sample obtained when the sampling operation is completed into the first relay bin A2, and after the relay bin A2 is filled with the sampled sample, the sampled sample is conveyed into the conveying channel 600 to become a second sampled relay bin B2 in the conveying channel 600. While the relay bin A2 leaves from the relay bin storage channel, the empty relay bins arranged behind the relay bin A2 in the relay bin storage channel sequentially move forward by one bin space, and the empty relay bin arranged at the first position is the relay bin A3. And so on until the number of N sampling relay bins Bn (N is a number of 2 or more) placed in the conveyance path 600 reaches a preset number N. As an example, for example, the preset number N has a value of 4, i.e., the conveying path 600 can convey at most 4 relay bins at a time. When the 4 sampling relay bins B1, B2, B3 and B4 are placed in the conveying channel 600, the first isolation valve 610 can be controlled to be closed, and then after the conveying channel 600 is vacuumized, the 4 relay bins B1, B2, B3 and B4 are controlled to move in the conveying channel so as to move the corresponding 4 sampling samples out of the magnetron sputtering chamber.
In this embodiment, the sampling manner of the sampling points may be specifically as follows.
In one mode, corresponding to the region to be sampled, sampling devices are respectively arranged in each region to perform sampling operation in the corresponding region.
At this time, the plurality of sampling devices are distributed in scattered points in the magnetron sputtering chamber, a relay bin is arranged corresponding to each sampling device, and after the sampling device finishes sampling, the sampling samples are placed in the corresponding relay bins. The sampling device can record sampling area information and sampling time information corresponding to the sampled samples sampled by the sampling device.
In a second mode, a strip-type sampling device is arranged corresponding to the area to be sampled, and sampling strips of the sampling device are continuously distributed in the magnetron sputtering chamber along a preset direction.
Compared with the first mode, the second mode can continuously sample along the preset direction in the magnetron sputtering chamber. As an example, for example, a sampling strip line (generally arranged in a horizontal direction) penetrating through a gap channel between the target and the substrate is arranged in the magnetron sputtering chamber, the sampling strip line is arranged parallel to the substrate, and two ends of the sampling strip line can be fixed by a strip line retracting mechanism, so that the coating condition of the substrate in the magnetron sputtering chamber is sampled and monitored.
Specifically, the strip line sampling device may include a sampling strip line storage chamber, a sampling strip line recovery chamber, and a sampling strip line cutting structure. And the sampling strip line is arranged between the sampling strip line storage cavity and the sampling strip line recovery cavity. The sampling strip line storage cavity is internally provided with a strip line disc and an unreeling mechanism, the sampling strip line is wound on the strip line disc, and the unreeling mechanism is used for unreeling the strip line disc to output the sampling strip line. The sampling strip line recovery cavity is internally provided with a recovery disc and a winding mechanism, and the winding mechanism is used for winding the sampled sampling strip line so as to recover the sampling strip line, and the recovered sampling strip line is wound on the recovery disc. The retracted sampling strip line is a sampling sample, and when the sampling time or the sampling stage reaches a preset value, the sampling device can control the sampling strip line cutting structure to cut off the sampling strip line at the end where the sampling strip line recovery cavity is located, and then the recovery disc is acquired and placed in the relay bin. And recording sampling area information and sampling time information corresponding to the sampling strip line segments on the recovery disk.
Preferably, the sampling strip line severing structure further comprises a strip line holder. The strip clamp is used for fixedly limiting the vicinity of the cutting end of the sampling strip line before the sampling strip line is cut off, and after the sampling strip line is cut off, the strip clamp can fixedly limit the free end of the sampling strip line generated by cutting off so as to prevent the sampling strip line segment left in the magnetron sputtering chamber from moving in the magnetron sputtering chamber.
Preferably, the sampling strip line recycling cavity can be directly abutted with the relay bin, so that a recycling tray after sampling can be directly conveyed into the relay bin. The chamber-to-chamber interfacing and the transfer of objects between multiple chambers are well known in the art and will not be described in detail herein.
In a third mode, a sampling device capable of movably sampling is arranged in the magnetron sputtering chamber, the sampling device comprises a sampling arm, and the sampling arm is controlled to flexibly sample corresponding to an area needing to be sampled.
At this time, the sampling arm includes multi freedom arm and sampling portion, the sampling portion is located the free end of many freedom arm, sampling portion includes sampling hole, sampling piece and sampling piece transmission structure, carries out magnetron sputtering environment data sampling through the sampling piece under the sampling hole after, control sampling piece transmission structure work in order to transmit the sampling piece to the relay storehouse. And recording sampling area information and sampling time information corresponding to each sampling slice.
Specifically, referring to fig. 7, a typical structure of a sampling arm is illustrated. The sampling arm includes multi freedom arm 421 and sampling portion 422, sampling portion 422 includes sampling hole 4221, is provided with sampling piece transmission structure 4223 under the sampling hole 4221, and sampling piece storage chamber 4224 is provided with to sampling piece transmission structure 4223's one end, has deposited sampling piece 4222 in the sampling piece storage chamber. When sampling is needed, the sampling sheet storage cavity 4224 is controlled to output a sampling sheet 4222 to the sampling sheet transmission structure 4223, the sampling sheet transmission structure 4223 is controlled to move the sampling sheet 4222 to the position of the sampling hole 4221, and the sampling sheet 4222 samples the magnetron sputtering chamber environment through the sampling hole. After reaching the preset sampling time/sampling stage, the sampling sheet transmission structure 4223 is controlled to transmit the sampling sheet 4222 into the relay bin 500, and then the bin gate 510 of the relay bin is controlled to be closed. Thereafter, the sampling arm is controlled to interface with the transport channel 600 such that a relay cartridge containing the sampled sample is introduced into the transport channel 600. When the sampling arm is specifically arranged, the sampling part 422 of the sampling arm can adopt a hollow cavity structure, the upper part of one end of the hollow cavity structure is opened to form a sampling hole 4221, a sampling sheet 4222 and a sampling sheet transmission structure 4223 are correspondingly arranged below the sampling hole, the output end of the sampling sheet transmission structure 4223 is in butt joint with a relay bin, and the relay bin can move in the hollow cavity structure; the other end of the hollow cavity structure is provided with an isolation valve, the end where the isolation valve is located can be in butt joint with the conveying channel 600, and when the sampling arm is in butt joint with the conveying channel 600, the isolation valve at the end is opened to enable the relay bin to enter the conveying channel.
The manner of driving the relay bin into the conveying channel may be driven by a driving structure (such as an electric push rod or a conveying belt) in the hollow cavity, or may be driven by a power driving structure of the relay bin itself, which is not limited herein.
In this embodiment, the relay bin may further be provided with sampling data information, where the sampling data information is used to record sampling area information and sampling time information of the sampling operation. At this time, the sampling part 422 of the sampling arm may further include an image pickup part 4225 and a printing part 4226, as shown in fig. 7.
The image capturing unit 4225 is configured to capture image data of a current sampling area after the sampling arm drives the sampling unit 422 to reach the area to be sampled, and transmit the image data to the associated image recognition device for recognition to obtain sampling area information. The sampling region information belongs to sampling data information, which is used to identify the location of the sample (the location of the sampling region in the magnetron sputtering chamber).
As an example of a typical manner, for example, a user may preset 3 regions of interest for a magnetron sputtering process, and target sputtering regions, target base gap regions, and substrate film coating regions respectively, and according to image data of a current sampling region captured by the image capturing portion 4225, identify the image data by a preset trained image identification model, and obtain a sampling region identification result. The sampling region identification result includes information of whether the sampling region belongs to a region of interest and to which region of interest the sampling region belongs. The sampling area identification result is the sampling area information of the sampling operation. Preferably, when the result of the identification is a non-attention area, the corresponding sampling area information may be identified as a non-attention area or as an invalid sampling.
The printing unit 4226 performs a printing operation of the sampled data information on the sampled relay bin 500. The printing operation may be to print the sampling data information directly on the outer surface of the relay bin, or to print the sampling data information on the attachable carrier and attach the attachable carrier to the outer surface of the relay bin.
In another implementation manner of this embodiment, a multi-azimuth rotary sampling device may also be disposed at the sampling point.
The multi-azimuth rotary sampling device may specifically include: the mounting seat is provided with a plurality of sampling execution parts which are arranged in a circumferential array on the front surface of the mounting seat, and the mounting seat can rotate along a central rotating shaft to drive the plurality of sampling execution parts to rotate together; simultaneously, each sampling execution part is in sliding connection with the mounting seat, so that the sampling execution parts can do telescopic motion relative to the mounting seat, and are close to or far away from the mounting seat. When sampling, according to the region position to be sampled, after the multi-azimuth rotary sampling device is controlled to rotate, one or more sampling execution parts are controlled to stretch and retract relative to the mounting seat so as to enter the corresponding region position for sampling, and sampling region information and sampling time information of each sampling execution part are recorded.
The sampling execution portion may also place the sampled sample into a corresponding relay bin. Specifically, on the mount pad of diversified rotatory sampling device, corresponding to the setting position of every sampling execution portion, can be provided with relay storehouse mounting groove, every can hold a relay storehouse in the relay storehouse mounting groove, a plurality of relay storehouse mounting grooves are also in the front of mount pad is the circumference array. Preferably, the relay bin mounting grooves and the sampling execution parts are arranged at intervals in the circumferential direction, namely, one relay bin mounting groove is arranged between two adjacent sampling execution parts, and one sampling execution part is also arranged between two adjacent relay bin mounting grooves. Then, the multidirectional rotary sampling device can control the mounting seat to rotate, so that the relay bin filled with the sample is sequentially in butt joint with the conveying channel. And after the interface of the control conveying channel and the magnetron sputtering chamber is opened, the relay bin is controlled to enter the conveying channel for conveying.
In this embodiment, the sampled data information further includes sampling time information for recording the sampling operation.
The sampling time information can specifically comprise sampling start time, sampling end time and magnetron sputtering operation stage information to which the sampling time period belongs.
The sampling point can be provided with a relay bin stop position, a sampling execution part, an image pickup part and a printing part, and the sampling execution part, the image pickup part and the printing part are all connected with a sampling control part and receive the control of the sampling control part. The sampling execution part and the printing part are arranged corresponding to the stop position of the relay bin.
And the sampling execution part is used for carrying out sampling operation in the magnetron sputtering chamber to obtain a sampling sample and placing the sampling sample into a relay bin positioned at the stop position of the relay bin.
The image pickup part is used for shooting image data of the current sampling area and transmitting the image data to the associated image recognition device for recognition so as to acquire sampling area information.
The printing part is used for carrying out the printing operation of the sampling data information corresponding to the relay bin of the relay bin stop bit.
Preferably, the relay bin stop positions can accommodate a plurality of relay bin stops, the head ends of the relay bin stop positions are connected with the conveying channel, and when the interface between the conveying channel and the magnetron sputtering chamber is opened, the relay bin can move to the relay bin stop positions from the conveying channel through the interface to stop or move to the conveying channel from the relay bin stop positions to transmit; at this time, the plurality of relay bins are sequentially parked on the relay bin parking position, and the first relay bin at the head end of the relay bin parking position is the current sampling relay bin for placing the sampling sample of the current sampling operation.
At this time, the sampling control section is configured to: according to the current sampling operation executed by the sampling execution part, after the current sampling operation is finished, acquiring corresponding sampling time information, acquiring image data and/or identified sampling area information shot by the shooting part, and integrating the acquired information to obtain sampling data information of the current sampling operation.
The sampling control section is further configured to perform a printing operation employing the data information.
In one embodiment, the obtained sampling data information is printed on the outer surface of the current sampling relay bin, and at this time, the outer surface of the relay bin is a material suitable for information printing.
In another embodiment, the attachable carrier is attached to the outer surface of the current sampling relay bin after the obtained sampling data information is printed on the attachable carrier.
In another embodiment, the obtained sampling data information is subjected to digital coding processing to generate a corresponding digital code, and the digital code is printed or pasted on the outer surface of the current sampling relay bin.
In another embodiment of the invention, a magnetron sputtering chamber data monitoring system is also provided.
The system comprises a sampling point and a sampling control part.
The sampling points are distributed in the magnetron sputtering chamber and are used for performing data sampling of magnetron sputtering to obtain sampling samples; and a relay bin is arranged corresponding to the sampling point, and a conveying channel is arranged on the magnetron sputtering chamber corresponding to the relay bin.
The sampling control section is configured to: according to the magnetron sputtering process, controlling sampling points to sample and placing the obtained sampled samples into the relay bin, and then controlling the interface between the conveying channel and the magnetron sputtering chamber to be closed so as to form a sealing channel isolated from the inside of the magnetron sputtering chamber; after the vacuum pumping treatment is carried out on the conveying channel, the relay bin is controlled to move in the conveying channel so as to move the sampling sample out of the magnetron sputtering chamber through the relay bin; and after the corresponding detection is finished, controlling the relay bin to return to the magnetron sputtering chamber again through the conveying channel.
Other technical features are described in the previous embodiments and are not described in detail here.
In the above description, the disclosure of the present invention is not intended to limit itself to these aspects. Rather, the components may be selectively and operatively combined in any number within the scope of the present disclosure. In addition, terms like "comprising," "including," and "having" should be construed by default as inclusive or open-ended, rather than exclusive or closed-ended, unless expressly defined to the contrary. All technical, scientific, or other terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Common terms found in dictionaries should not be too idealized or too unrealistically interpreted in the context of the relevant technical document unless the present disclosure explicitly defines them as such. Any alterations and modifications of the present invention, which are made by those of ordinary skill in the art based on the above disclosure, are intended to be within the scope of the appended claims.
Claims (9)
1. A method for magnetron sputtering chamber data monitoring, comprising the steps of:
arranging sampling points in the magnetron sputtering chamber, wherein the sampling points are used for performing data sampling of magnetron sputtering to obtain sampling samples;
the magnetron sputtering chamber is subjected to sealing and vacuumizing treatment to form a vacuum chamber;
according to the magnetron sputtering process, sampling by a sampling point is controlled, the obtained sampling sample is placed in a relay bin, and a conveying channel is arranged on a magnetron sputtering chamber corresponding to the relay bin; controlling the connection between the conveying channel and the magnetron sputtering chamber to be closed so as to form a sealing channel isolated from the inside of the magnetron sputtering chamber;
after the vacuum pumping treatment is carried out on the conveying channel, the relay bin is controlled to move in the conveying channel so as to move the sampling sample out of the magnetron sputtering chamber through the relay bin, then the relay bin is controlled to move into a special detection cavity, and the sampling sample in the relay bin is tested or measured through a sample detection device in the detection cavity; after the corresponding detection is finished, the relay bin is controlled to return to the magnetron sputtering chamber again through the conveying channel;
the conveying channel penetrates through the cavity wall of the magnetron sputtering cavity and is at least partially positioned in the magnetron sputtering cavity, and the conveying channel comprises an internal interface and an external interface; the inner interface end of the conveying channel is connected with the inside of the magnetron sputtering chamber through a first isolation valve, and the first isolation valve is used for isolating or communicating the conveying channel with the inner space of the magnetron sputtering chamber; the outer interface end of the conveying channel is externally connected with the magnetron sputtering chamber through a second isolation valve, and the second isolation valve is used for isolating or communicating the conveying channel with an external environment space; when the conveying channel is required to be vacuumized, the first isolation valve and the second isolation valve are controlled to close the corresponding interfaces.
2. The method of claim 1, wherein the step of controlling the relay magazine to return to the magnetron sputtering chamber via the transport path comprises:
under the condition that the conveying channel is judged to be sealed, purifying and vacuumizing the conveying channel and a relay bin in the conveying channel;
after the vacuumizing treatment is finished, controlling the opening of the interface between the conveying channel and the magnetron sputtering chamber so as to enable the conveying channel to be communicated with the inside of the magnetron sputtering chamber;
and controlling the relay bin to move in the conveying channel so as to move the relay bin to the position of the sampling point in the magnetron sputtering chamber.
3. The method according to claim 1, wherein the sampling manner of the sampling point is one of the following manners:
in a first mode, corresponding to the areas to be sampled, sampling devices are respectively arranged in each area to perform sampling operation in the corresponding area;
secondly, arranging strip-type sampling devices corresponding to the areas to be sampled, wherein sampling strip lines of the sampling devices are continuously distributed in a magnetron sputtering chamber along a preset direction;
in a third mode, a sampling device capable of movably sampling is arranged in the magnetron sputtering chamber, the sampling device comprises a sampling arm, and the sampling arm is controlled to flexibly sample corresponding to an area needing to be sampled.
4. The method according to claim 1, characterized in that: the sampling point is provided with a multidirectional rotary sampling device, the multidirectional rotary sampling device comprises a mounting seat, a plurality of sampling execution parts are arranged on the front surface of the mounting seat in a circumferential array, and the mounting seat is arranged on a central rotating shaft and can rotate along the central rotating shaft so as to drive the sampling execution parts to rotate together; meanwhile, each sampling execution part is in sliding connection with the mounting seat, so that the sampling execution parts can do telescopic movement relative to the mounting seat, and are close to or far away from the mounting seat;
when sampling, according to the region position to be sampled, after the multi-azimuth rotary sampling device is controlled to rotate, one or more sampling execution parts are controlled to extend out relative to the mounting seat so as to enter the corresponding region position for sampling, and sampling region information and sampling time information of each sampling execution part are recorded.
5. The method according to claim 1, characterized in that: the relay bin is provided with sampling data information, and the sampling data information is used for recording sampling area information and sampling time information of the sampling operation;
the sampling area information comprises the position information of the sampling area in the magnetron sputtering chamber;
The sampling time information comprises sampling start time, sampling end time and magnetron sputtering operation stage to which the sampling time period belongs.
6. The method according to claim 5, wherein: the sampling point is provided with a relay bin stop position, a sampling execution part, an image pickup part and a printing part, and the sampling execution part, the image pickup part and the printing part are all connected with a sampling control part and receive the control of the sampling control part;
the sampling execution part is used for carrying out sampling operation in the magnetron sputtering chamber to obtain a sampling sample and placing the sampling sample into a relay bin positioned at the stop position of the relay bin;
the image pickup part is used for shooting image data of a current sampling area and transmitting the image data to an associated image recognition device for recognition so as to acquire sampling area information;
the printing part is used for carrying out the printing operation of the sampling data information corresponding to the relay bin of the relay bin stop bit.
7. The method according to claim 6, wherein: the relay bin stopping position can accommodate a plurality of relay bin stopping positions, the head end of the relay bin stopping position is connected with the conveying channel, and when an interface between the conveying channel and the magnetron sputtering chamber is opened, the relay bin can move from the conveying channel to the relay bin stopping position for stopping or move from the relay bin stopping position to the conveying channel for conveying through the interface; at this time, the plurality of relay bins are sequentially parked on the relay bin parking position, and the first relay bin at the head end of the relay bin parking position is the current sampling relay bin for placing the sampling sample of the current sampling operation.
8. The method of claim 7, wherein the sampling control portion is configured to:
according to the current sampling operation executed by the sampling execution part, after the current sampling operation is finished, acquiring corresponding sampling time information, acquiring image data and/or identified sampling area information shot by the shooting part, and integrating the acquired information to acquire sampling data information of the current sampling operation; the method comprises the steps of,
printing the obtained sampling data information on the outer surface of the current sampling relay bin, wherein the outer surface of the relay bin is a material suitable for information printing; or,
printing the obtained sampling data information on a attachable carrier, and attaching the attachable carrier to the outer surface of the current sampling relay bin; or,
and carrying out digital coding processing on the obtained sampling data information to generate a corresponding digital code, and printing or pasting the digital code on the outer surface of the current sampling relay bin.
9. A magnetron sputtering chamber data monitoring system according to the method of claim 8, comprising:
the sampling points are distributed in the magnetron sputtering cavity and are used for performing data sampling of magnetron sputtering to obtain sampling samples; a relay bin is arranged corresponding to the sampling point, and a conveying channel is arranged on the magnetron sputtering chamber corresponding to the relay bin;
A sampling control section configured to: according to the magnetron sputtering process, controlling sampling points to sample and placing the obtained sampled samples into the relay bin, and then controlling the interface between the conveying channel and the magnetron sputtering chamber to be closed so as to form a sealing channel isolated from the inside of the magnetron sputtering chamber; after the vacuum pumping treatment is carried out on the conveying channel, the relay bin is controlled to move in the conveying channel so as to move the sampling sample out of the magnetron sputtering chamber through the relay bin, then the relay bin is controlled to move into a special detection cavity, and the sampling sample in the relay bin is tested or measured through a sample detection device in the detection cavity; and after the corresponding detection is finished, controlling the relay bin to return to the magnetron sputtering chamber again through the conveying channel.
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| WO2022033026A1 (en) * | 2020-08-13 | 2022-02-17 | 北京航空航天大学合肥创新研究院 | Integrated processing device of ultrathin multilayer film and application method |
| CN115096439A (en) * | 2022-05-12 | 2022-09-23 | 宣城开盛新能源科技有限公司 | Sealed collection structure for improving collection accuracy of spectral data |
| CN116772916A (en) * | 2023-03-28 | 2023-09-19 | 北京空间飞行器总体设计部 | Small celestial body excitation sampling and air blowing sample vacuum experiment verification system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2022033026A1 (en) * | 2020-08-13 | 2022-02-17 | 北京航空航天大学合肥创新研究院 | Integrated processing device of ultrathin multilayer film and application method |
| CN115096439A (en) * | 2022-05-12 | 2022-09-23 | 宣城开盛新能源科技有限公司 | Sealed collection structure for improving collection accuracy of spectral data |
| CN116772916A (en) * | 2023-03-28 | 2023-09-19 | 北京空间飞行器总体设计部 | Small celestial body excitation sampling and air blowing sample vacuum experiment verification system |
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