CN117153854A - Solid imaging element and method for manufacturing the same - Google Patents
Solid imaging element and method for manufacturing the same Download PDFInfo
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- CN117153854A CN117153854A CN202310581560.XA CN202310581560A CN117153854A CN 117153854 A CN117153854 A CN 117153854A CN 202310581560 A CN202310581560 A CN 202310581560A CN 117153854 A CN117153854 A CN 117153854A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000007787 solid Substances 0.000 title claims description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000011248 coating agent Substances 0.000 claims description 39
- 238000000576 coating method Methods 0.000 claims description 39
- 239000007788 liquid Substances 0.000 claims description 21
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical group CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 claims description 12
- -1 polysiloxane Polymers 0.000 claims description 10
- 229920001296 polysiloxane Polymers 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 7
- 239000000945 filler Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 15
- 230000004313 glare Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 52
- 239000000463 material Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 7
- 239000003086 colorant Substances 0.000 description 5
- 238000005192 partition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000008199 coating composition Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000001055 blue pigment Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001056 green pigment Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000001054 red pigment Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Provided are a solid-state imaging element capable of suppressing the occurrence of phenomena such as ghosting and glare and suppressing the reduction in sensitivity of a photoelectric conversion element, and a method for manufacturing the same. A solid-state imaging element (10) is provided with: a semiconductor substrate (11) having a plurality of photoelectric conversion elements (12), a microlens array having a plurality of microlenses (17) for allowing light to be incident on the photoelectric conversion elements (12) of the semiconductor substrate (11), and an antireflection layer (18) covering the surface of the microlenses (17), wherein the refractive index of the microlenses (17) at a wavelength of 550nm is 1.5 to 1.7, the refractive index of the antireflection layer (18) at a wavelength of 550nm is 1.2 to 1.3, and the planarization ratio Rf, which is the ratio of the height T3 of the antireflection layer (18) to the height T1 of the microlenses (17), is 32.6% to 64.2%.
Description
Technical Field
The present invention relates to a solid imaging element and a method of manufacturing the same.
Background
A solid-state imaging device such as an inductive coupling device (CCD) or a Complementary Metal Oxide Semiconductor (CMOS) using a photoelectric conversion device such as a photodiode is used in a digital still camera, a digital video camera, or the like. In such a solid-state imaging element, in order to make incident light efficiently enter the light receiving section, a microlens array in which microlenses of a plurality of pixels are formed is provided.
In order to increase the light condensing rate, a material having a relatively large refractive index (about 1.5 to 1.7) is used for the microlens array. In a microlens of a microlens array using such a material, light reflection is likely to occur at an interface (surface), and phenomena such as ghost and flare are likely to occur. For this reason, for example, patent document 1 below proposes that an antireflection layer of a material having a refractive index smaller than that of the microlens array is provided on the surface of each microlens, thereby reducing light reflection to suppress occurrence of phenomena such as ghost and flare.
The antireflective layer is usually formed by vacuum film formation such as CVD 2 And forming a film. However, in the vacuum film forming method, not only it is difficult to form a large area, but also the equipment cost becomes high. For this reason, for example, patent document 2 below proposes that a polysiloxane solution obtained by adding polysiloxane to a solvent is applied to the surface of a microlens array and heated to be dried and cured, so that an antireflection layer is easily provided on the surface of each microlens.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 4-223371
Patent document 2: international publication No. 2016/121598
Disclosure of Invention
[ problem to be solved by the invention ]
However, in the solid-state imaging element, when the conventional antireflection layer as described above is provided on the surface of each microlens of the microlens array, there is a problem that the sensitivity of the photoelectric conversion element is easily lowered.
Accordingly, an object of the present invention is to provide a solid-state imaging element capable of suppressing the occurrence of phenomena such as ghost and flare and suppressing the decrease in sensitivity of a photoelectric conversion element, and a method for manufacturing the same.
[ means for solving the problems ]
In order to solve the above problems, a solid-state imaging element according to the present invention includes: the semiconductor device includes a semiconductor substrate having a plurality of photoelectric conversion elements, a microlens array having a plurality of microlenses for allowing light to be incident on the photoelectric conversion elements of the semiconductor substrate, and an antireflection layer covering the surface of the microlenses, wherein the refractive index of the microlenses at a wavelength of 550nm is 1.5 to 1.7, the refractive index of the antireflection layer at a wavelength of 550nm is 1.2 to 1.3, and a planarization ratio Rf, which is a ratio of a height T3 of the antireflection layer to a height T1 of the microlenses, is 32.6% to 64.2%.
In the solid-state imaging element according to the present invention, it is preferable that the planarization rate (Rf) is 40% to 60%.
In the solid-state imaging element according to the present invention, it is preferable that the height T3 of the antireflection layer in the solid-state imaging element is: when the position of the antireflection layer closest to the surface of the semiconductor substrate between adjacent microlenses is set as a bottom P3, and a position at which a parallel line L1 to the surface of the semiconductor substrate with the top P2 of the antireflection layer as a starting point intersects a perpendicular L2 to the surface of the semiconductor substrate with the bottom P3 of the antireflection layer as a starting point is set as an intersection point P4, the length of the perpendicular L2 between the bottom P3 and the intersection point P4.
In the solid-state imaging element according to the present invention, it is preferable that the thickness T2 of the antireflection layer is 80nm to 150nm in the solid-state imaging element.
In the solid-state imaging element according to the present invention, it is preferable that the antireflection layer is formed of polysiloxane.
In the solid-state imaging element according to the present invention, it is preferable that the antireflection layer contains a silica filler.
In order to solve the above-described problems, a method for manufacturing a solid-state imaging device according to the present invention is a method for manufacturing the solid-state imaging device, wherein a coating liquid is obtained by mixing a solvent with a coating component having a refractive index of 1.2 to 1.3 at a wavelength of 550nm in a proportion of 1.5 to 9 mass%, coating the surface of the microlens with the coating liquid, and then drying and curing the coating liquid to provide the antireflection layer on the surface of the microlens.
In the method for manufacturing a solid-state imaging element according to the present invention, it is preferable that the coating component is polysiloxane.
In the method for manufacturing a solid-state imaging element according to the present invention, it is preferable that the solvent is 2-butanol.
[ Effect of the invention ]
According to the solid-state imaging element of the present invention, since the refractive index of the microlens is 1.5 to 1.7 at the wavelength of 550nm, the refractive index of the antireflection layer is 1.2 to 1.3 at the wavelength of 550nm, and the planarization ratio Rf is 32.6% to 64.2%, it is possible to suppress the occurrence of phenomena such as ghost and flare while suppressing the decrease in sensitivity of the photoelectric conversion element.
Further, according to the method for manufacturing a solid-state imaging element of the present invention, a coating liquid is obtained by mixing a coating component having a refractive index of 1.2 to 1.3 at a wavelength of 550nm with a solvent so that the content thereof is 1.5 to 9 mass%, and the surface of a microlens is coated with the coating liquid, and then the coating liquid is dried and cured, whereby an antireflection layer is provided on the surface of the microlens, whereby it is possible to easily manufacture a solid-state imaging element capable of suppressing occurrence of phenomena such as ghost and flare and suppressing a decrease in sensitivity of a photoelectric conversion element.
Drawings
Fig. 1 is a cross-sectional view showing a schematic structure of a main embodiment of a solid-state imaging element according to the present invention.
FIG. 2 is a graph showing the relationship between the thickness of the antireflection layer and the glare luminance.
FIG. 3 is a graph showing the relationship between the planarization rate and the glare luminance.
Fig. 4 is a graph showing a relationship between the thickness of the antireflection layer and the peak sensitivity of the photoelectric conversion element.
Fig. 5 is a graph showing a relationship between a planarization rate and a peak sensitivity of a photoelectric conversion element.
FIG. 6 is a graph showing the relationship between the concentration of a coating component in a coating liquid and the planarization rate.
[ description of symbols ]
10. Solid imaging element
11. Semiconductor substrate
12. Photoelectric conversion element
13. Light shielding layer
14A-14C color filter
15. Partition wall
16. Microlens forming layer
17. Micro lens
18. Anti-reflection layer
Detailed Description
Hereinafter, embodiments of a solid-state imaging element and a method of manufacturing the same according to the present invention will be described with reference to the drawings, but the present invention is not limited to the following embodiments described based on the drawings.
Main embodiment(s)
A main embodiment of a solid-state imaging element and a method of manufacturing the same according to the present invention will be described with reference to fig. 1.
As shown in fig. 1, a plurality of photoelectric conversion elements 12 such as photodiodes are two-dimensionally arranged inside a semiconductor substrate 11. That is, the semiconductor substrate 11 is two-dimensionally provided with a plurality of photoelectric conversion elements 12 corresponding to pixels. Each photoelectric conversion element 12 has a function of converting light into an electrical signal.
The semiconductor substrate 11 provided with the photoelectric conversion element 12 is generally provided with a protective layer on the outermost surface for protection and planarization of the surface (light incident surface). The semiconductor substrate 11 is formed of a material that transmits visible light and can withstand a temperature of at least about 300 ℃. Examples of such a material include: si, siO 2 And Si-containing materials such as oxides, nitrides, and mixtures thereof.
A light shielding layer 13 for shielding a part of incident light is disposed on the semiconductor substrate 11 in correspondence with the light receiving region of the photoelectric conversion element 3. A plurality of color filters 14A to 14C of respective colors are arranged on the light shielding layer 13 so as to correspond to the respective photoelectric conversion elements 12. The color filters 14A to 14C are arranged in a predetermined pattern and correspond to respective colors that color-decompose incident light.
The color filters 14A to 14C are arranged in a bayer arrangement, which is a regular pattern preset so as to correspond to each of the plurality of photoelectric conversion elements 12, in correspondence with the pixel positions. The color filters 14A to 14C are not necessarily limited to the bayer arrangement, but may be arranged in other ways.
The color filters 14A to 14C contain a pigment (colorant) of a predetermined color and a thermally curable component or a photo-curable component. As the colorant, for example, a green pigment (G) may be contained in the color filter 14A, a blue pigment (B) may be contained in the color filter 14B, and a red pigment (R) may be contained in the color filter 14C.
The color filters 14A to 14C are not limited to RGB three colors, and may be a combination of cyan, magenta, yellow, and the like. The color filters 14A to 14C may be provided with a near infrared cut filter, a band pass filter, or the like. The color filters 14A to 14C may be provided with transparent layers having adjusted refractive indices in a part of the arrangement.
Partition walls 15 are disposed between adjacent color filters 14A to 14C, respectively. The partition wall 15 may be omitted. A microlens forming layer 16 as a substrate for forming microlenses is disposed on the color filters 14A to 14C. A plurality of microlenses 17 each having a hemispherical shape for allowing light to enter are formed so as to protrude from the microlens forming layer 16 in correspondence with each photoelectric conversion element 12, and the microlenses 17 are formed of a material (for example, MFR512 (product number) manufactured by JSR corporation) having a refractive index of 1.5 to 1.7 at a wavelength of 550 nm. The microlenses 17 may contain a hollow filler such as a silica filler.
In the microlens 17, a height T1, which is the shortest distance between the surface of the microlens-forming layer 16 and the top P1 farthest from the surface, is 0.3 μm or more and 1.5 μm or less (preferably 0.4 μm or more and 0.7 μm or less). The microlens 17 has a diameter on the surface of the microlens-forming layer 16, that is, a pitch D1 of 1 μm or more and 3 μm or less. The microlens array in the present embodiment is constituted by such a microlens-forming layer 16, microlens 17, and the like.
An antireflection layer 18 made of a material (for example, polysiloxane or the like) having a refractive index of 1.2 to 1.3 at a wavelength of 550nm is provided on the surface of the microlens 17 so as to cover the surface of the microlens 17. The thickness T2, which is the shortest distance between the top P2 farthest from the surface of the microlens-forming layer 16 and the top P1 of the surface of the microlens 17, on the surface of the antireflection layer 18 is 80nm to 150 nm.
Here, the position of the antireflection layer 18 closest to the surface of the microlens-forming layer 16, that is, closest to the surface of the semiconductor substrate 11, between adjacent microlenses 17 is set as the bottom P3. Further, a position where a parallel line L1 with respect to the surface of the microlens-forming layer 16, that is, the surface of the semiconductor substrate 11, starting from the top P2 of the antireflection layer 18 intersects a perpendicular line L2 with respect to the surface of the microlens-forming layer 16, that is, the surface of the semiconductor substrate 11, starting from the bottom P3 of the antireflection layer 18 is set as an intersection point P4. The length of the perpendicular L2 between the bottom P3 and the intersection P4 is set to the height T3 of the antireflection layer 18.
At this time, the planarization ratio Rf (= (T3/T1) ×100) which is the ratio of the height T3 of the antireflection layer 18 to the height T1 of the microlens 17 is 32.6% or more and 64.2% or less (32.6% or less Rf. Ltoreq.64.2%), and particularly preferably 40% or more and 60% or less (40% or less Rf. Ltoreq.60%). This is because: when the planarization ratio Rf exceeds 64.2%, phenomena such as ghost and flare are easily caused; when less than 32.6%, the sensitivity of the photoelectric conversion element 3 is easily lowered. The smaller the value of the planarization ratio Rf, the smaller the irregularities of the microlens array.
Next, a method of manufacturing the solid-state imaging element 10 according to this embodiment will be described. First, the following steps are performed: the light shielding layer 13, the color filters 14A to 14C, the partition wall 15, the microlens formation layer 16, and the microlenses 17 are sequentially provided on the substrate 11 having the photoelectric conversion element 12 by respective known means.
Next, a coating liquid containing a material (for example, polysiloxane or the like) having a refractive index of 1.2 to 1.3 at a wavelength of 550nm is attached to the surface of the microlens 17 by coating or the like, so that the surface is coated with the coating liquid.
The coating liquid is obtained by mixing a solvent such as 2-butanol and a coating component such as polysiloxane. The coating liquid may further contain an additive such as a surfactant, a filler such as a hollow silica filler, or the like. The ratio of the coating component in the coating liquid is 1.5 to 9 mass%, preferably 1.5 to 6 mass%, more preferably 1.5 to 4 mass%, and still more preferably 2 to 3 mass%.
The method for adhering the coating liquid to the surface of the microlens 17 is not particularly limited, and examples thereof include spin coating, spray coating, slit coating, dip coating, and the like, and spin coating is preferable.
In this way, after the surface of the microlens 17 is coated with the coating liquid, the coating liquid is dried and cured by heating (about 200 ℃ to 230 ℃) using a heater such as a heating plate or an oven. By performing the above steps, the antireflection layer 18 covering the surface of the microlens 17 is formed, and the solid imaging element 10 can be obtained.
When the solid-state imaging element 10 is manufactured in this way, the solid-state imaging element 10 having the planarization rate Rf of 32.6% or more and 64.2% or less can be easily obtained.
Therefore, according to the solid-state imaging element 10 according to the present embodiment, the occurrence of ghost and flare can be suppressed while suppressing the decrease in sensitivity of the photoelectric conversion element.
Examples (example)
Hereinafter, embodiments of a solid-state imaging element and a method of manufacturing the same according to the present invention are described, but the present invention is not limited to only the embodiments described below.
[ test A ]
Test body and comparison body production
The following coating solutions were spin-coated on the following microlenses in such an amount as to form an antireflection layer having the following thickness T2, and the coating solutions were heated (200 ℃ c.×180 seconds) by a hot plate and dried and cured to prepare test pieces A1 to A3. A comparative body A0 was also prepared without applying a coating liquid to the microlens described below.
Micro lens
Materials: "C007 (product number)" manufactured by Tokyo applied chemical Co., ltd "
Refractive index (wavelength 550 nm): 1.61
Height T1:0.5 μm
Distance D1:1.1 μm
Coating liquid
Materials: polysiloxane "SC510KF (product number)" 2-butanol 5% by mass solution manufactured by Pibond Co., finland
Refractive index: 1.25
TABLE 1
| Anti-reflection layer | Thickness T2 (nm) | Planarization ratio Rf (%) |
| Test body A1 | 50 | 64.2 |
| Test body A2 | 120 | 56.0 |
| Test body A3 | 160 | 32.6 |
| Comparator A0 | 0 | 100 |
Glare brightness
The test pieces A1 to A3 and the comparative piece A0 were irradiated with laser light (wavelength: 635 nm), and the intensity of the reflected diffracted light was measured by a luminance meter to obtain relative values of the glare luminance (100) with respect to the comparative piece A0. The smaller the number, the better the indication. The results are shown in FIGS. 2 and 3.
As can be seen from fig. 2, it can be confirmed that: if the thickness T2 of the antireflection layer is 80nm or more, the occurrence of the phenomena such as ghost and flare can be suppressed to the same extent or more as the comparative body A0 without the antireflection layer. As can be seen from fig. 3, it can be confirmed that: if the planarization ratio Rf is 64.2% or less, the occurrence of phenomena such as ghosts and glare can be suppressed to the same extent or more as the comparative body A0 without the antireflection layer.
Peak sensitivity
The maximum value (peak sensitivity) of the intensity of Green light incident on the photoelectric conversion element to which the solid-state imaging elements of the test bodies A1 to A3 and the comparison body A0 were applied was obtained. The results are shown in FIGS. 4 and 5.
As can be seen from fig. 4, it can be confirmed that: if the thickness T2 of the antireflection layer is 150nm or less, the decrease in sensitivity of the photoelectric conversion element can be suppressed to the same extent or more as that of the comparative body A0 without the antireflection layer. As can be seen from fig. 5, it can be confirmed that: if the planarization ratio Rf is 32.6% or more, the decrease in sensitivity of the photoelectric conversion element can be suppressed to the same extent or more as that of the comparative body A0 having no antireflection layer.
From the above, it can be considered that: if the planarization ratio Rf is set to 32.6% or more and 64.2% or less (32.6% or more and Rf. Ltoreq.64.2%) then the occurrence of phenomena such as ghosting and glare can be suppressed while the decrease in sensitivity of the photoelectric conversion element can be suppressed.
[ test B ]
Coating solutions (see table 2 below) having different coating component concentrations were prepared from the same materials as in test a, and were applied dropwise to microlenses identical to test a in a predetermined amount (20 mL) to spin coat, and the samples were dried and cured in the same manner as in test a to prepare test bodies B1 to B5, and the planarization ratios Rf were obtained. The results are shown in FIG. 6.
TABLE 2
| Test body | Coating component (mass%) |
| B1 | 1.5 |
| B2 | 2 |
| B3 | 3 |
| B4 | 5 |
| B5 | 10 |
As can be seen from fig. 6, it can be confirmed that: when the coating composition of the coating liquid is 9 mass% or less, the planarization rate Rf may be 40% or more; when it is 6 mass% or less, the planarization rate Rf may be 45% or more; when it is 4 mass% or less, the planarization rate Rf may be 50% or more; when it is 2 mass% or more and 3 mass% or less, the planarization rate Rf can be maximized, and the coating composition can be most effectively used.
[ Industrial Applicability ]
The present invention can provide a solid-state imaging element and a method for manufacturing the same, which can suppress the occurrence of phenomena such as ghosting and glare and can also suppress the reduction in sensitivity of a photoelectric conversion element, and therefore can be used industrially extremely advantageously.
Claims (9)
1. A solid-state imaging element is provided with:
a semiconductor substrate having a plurality of photoelectric conversion elements,
A microlens array having a plurality of microlenses for making light incident on the photoelectric conversion elements of the semiconductor substrate, respectively, and
an anti-reflection layer covering the surface of the microlens,
is characterized in that the method comprises the steps of,
the refractive index of the microlens at the wavelength of 550nm is 1.5 to 1.7,
the refractive index of the anti-reflection layer at the wavelength of 550nm is 1.2 to 1.3,
the planarization rate (Rf) as a ratio of the height (T3) of the antireflection layer to the height (T1) of the microlens is 32.6% to 64.2%.
2. The solid imaging element of claim 1, wherein,
the planarization rate (Rf) is 40-60%.
3. The solid imaging element of claim 1, wherein,
the height (T3) of the anti-reflection layer is:
when the position of the antireflection layer closest to the surface of the semiconductor substrate between adjacent microlenses is set as a bottom (P3), and
when a position where a parallel line (L1) to the surface of the semiconductor substrate starting from the top (P2) of the anti-reflection layer intersects a perpendicular line (L2) to the surface of the semiconductor substrate starting from the bottom (P3) of the anti-reflection layer is set as an intersection point (P4),
-the length of the perpendicular (L2) between the bottom (P3) and the intersection point (P4).
4. A solid imaging element according to any one of claims 1 to 3, characterized in that the thickness (T2) of the anti-reflection layer is 80nm or more and 150nm or less.
5. A solid imaging element according to any one of claims 1 to 3, wherein said anti-reflective layer is composed of polysiloxane.
6. A solid imaging element according to any one of claims 1 to 3, wherein said anti-reflective layer comprises a silica filler.
7. A method of manufacturing a solid-state imaging element according to any one of claims 1 to 3, characterized in that the following steps are performed:
a step of disposing the microlens array on the semiconductor substrate; and
and a step of mixing a coating component having a refractive index of 1.2 to 1.3 at a wavelength of 550nm with a solvent so as to contain 1.5 to 9 mass% of the coating component, thereby obtaining a coating liquid, coating the surface of the microlens with the coating liquid, and drying and curing the coating liquid, thereby providing the antireflection layer on the surface of the microlens.
8. The method of manufacturing a solid imaging element according to claim 7, wherein the coating component is polysiloxane.
9. The method of manufacturing a solid imaging element according to claim 8, wherein the solvent is 2-butanol.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-089173 | 2022-05-31 | ||
| JP2022089173A JP2023176737A (en) | 2022-05-31 | 2022-05-31 | Solid-state image sensing device and method for manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117153854A true CN117153854A (en) | 2023-12-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310581560.XA Pending CN117153854A (en) | 2022-05-31 | 2023-05-23 | Solid imaging element and method for manufacturing the same |
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| Country | Link |
|---|---|
| JP (1) | JP2023176737A (en) |
| CN (1) | CN117153854A (en) |
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2022
- 2022-05-31 JP JP2022089173A patent/JP2023176737A/en active Pending
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