CN117148996A - Touch substrate and manufacturing method thereof - Google Patents

Touch substrate and manufacturing method thereof Download PDF

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Publication number
CN117148996A
CN117148996A CN202311107929.XA CN202311107929A CN117148996A CN 117148996 A CN117148996 A CN 117148996A CN 202311107929 A CN202311107929 A CN 202311107929A CN 117148996 A CN117148996 A CN 117148996A
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CN
China
Prior art keywords
layer
reflection layer
metal layer
touch
reflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311107929.XA
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Chinese (zh)
Inventor
韩龙
李振行
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InfoVision Optoelectronics Kunshan Co Ltd
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InfoVision Optoelectronics Kunshan Co Ltd
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Application filed by InfoVision Optoelectronics Kunshan Co Ltd filed Critical InfoVision Optoelectronics Kunshan Co Ltd
Priority to CN202311107929.XA priority Critical patent/CN117148996A/en
Publication of CN117148996A publication Critical patent/CN117148996A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416Control or interface arrangements specially adapted for digitisers
    • G06F3/04164Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/13338Input devices, e.g. touch panels
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes

Abstract

The application discloses a touch substrate and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: providing a transparent substrate; sequentially forming a first metal layer and a first anti-reflection layer on a transparent substrate; the method comprises the steps of firstly carrying out wet etching treatment on a first metal layer and a first anti-reflection layer, and then carrying out dry etching treatment on the first anti-reflection layer, so that a patterned first touch signal wire, a first peripheral lead wire and a first pin are formed on the first metal layer, the first peripheral lead wire is connected between the first touch signal wire and the first pin, and the pattern of the first anti-reflection layer corresponds to the pattern of the first metal layer and covers the first metal layer. The first metal layer and the first anti-reflection layer are subjected to wet etching treatment, and then the first anti-reflection layer is subjected to dry etching treatment, so that sharp corners formed on the side surface of the first anti-reflection layer due to wet etching are removed, and the undercut phenomenon of the first anti-reflection layer is eliminated.

Description

Touch substrate and manufacturing method thereof
Technical Field
The present disclosure relates to touch technology, and more particularly, to a touch substrate and a method for manufacturing the same.
Background
With rapid development of display technology, touch display panels have been widely accepted and used by people, such as smart phones and tablet computers. The touch display panel combines the touch panel and the display panel into a whole by adopting an embedded touch technology, and the function of the touch panel is embedded into the display panel, so that the display panel has the functions of displaying and sensing touch input.
According to the different arrangement modes of the touch sensing layer In the display panel, the touch display panel is divided into structures such as an externally-hung (Addon Mode), an embedded (In-cell) and an externally-embedded (On-cell). The embedded touch screen integrates the touch function in the display screen, so that the thickness of the whole display can be effectively reduced, the production process is simplified, the product is lighter and thinner, and the production cost is lower. The embedded touch screen is a touch panel directly configured on the liquid crystal display panel, so that the difficulty is reduced compared with In-Cell technology, and the embedded touch screen is widely applied and is one of the mainstream touch technologies In the liquid crystal display device at present.
The touch display panel generally has a display area and a non-display area, the touch range is the same as or slightly larger than the display area, a touch line is arranged in the touch range to receive touch information, and peripheral leads, pins and the like are arranged in the non-touch range to connect the touch line and the touch circuit board. Because these metal wires (touch control wire, peripheral lead wire, pin, etc.) are distributed on the surface of the whole touch control panel, the human eye can see the reflection phenomenon of the metal wires, especially the peripheral wiring is denser, the reflection phenomenon is more severe, and the display effect of the externally embedded touch screen is greatly reduced.
The current method for solving the reflection problem of the metal wire is to set an anti-reflection layer on the metal wire, in order to improve the efficiency of the process, the metal layer and the anti-reflection layer are usually etched simultaneously by adopting an etching process, but the etching rate of the etching solution to the metal layer is faster, the problem of undercut is easy to occur, the line width of the metal wire is smaller, and the impedance is increased.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the application aims to provide a touch substrate and a manufacturing method thereof, which are used for solving the problem that undercut is easy to occur when a metal layer and an anti-reflection layer are etched in the prior art.
The aim of the application is achieved by the following technical scheme:
the application provides a manufacturing method of a touch substrate, which comprises the following steps:
providing a transparent substrate;
sequentially forming a first metal layer and a first anti-reflection layer on the transparent substrate;
and performing wet etching treatment on the first metal layer and the first anti-reflection layer, and performing dry etching treatment on the first anti-reflection layer to form a patterned first touch signal line, a first peripheral lead and a first pin on the first metal layer, wherein the first peripheral lead is connected between the first touch signal line and the first pin, and the pattern of the first anti-reflection layer corresponds to the pattern of the first metal layer and covers the first metal layer.
The application also provides a manufacturing method of the touch substrate, which comprises the following steps:
providing a transparent substrate;
forming a first metal layer on the whole surface of the transparent substrate, firstly etching the first metal layer to enable the first metal layer to form a patterned first touch signal wire, a first peripheral lead and a first pin, wherein the first peripheral lead is connected between the first touch signal wire and the first pin;
and forming a first anti-reflection layer covering the first metal layer on the transparent substrate, and etching the first anti-reflection layer to enable the pattern of the first anti-reflection layer to correspond to the pattern of the first metal layer and cover the first metal layer.
Further, the first anti-reflection layer wraps the first touch signal line, the first peripheral lead and the top surface and the side surface of the first pin.
Further, the manufacturing method comprises the following steps:
and forming a first anti-corrosion protection layer covering the first anti-reflection layer on the transparent substrate, wherein the pattern of the first anti-corrosion protection layer corresponds to the pattern of the first anti-reflection layer and covers the first anti-reflection layer.
Further, the manufacturing method comprises the following steps:
forming a first insulating layer covering the first anti-reflection layer on the transparent substrate;
sequentially forming a second metal layer and a second anti-reflection layer on the first insulating layer;
and performing wet etching treatment on the second metal layer and the second anti-reflection layer, and performing dry etching treatment on the second anti-reflection layer to form a patterned second touch signal line, a second peripheral lead and a second pin on the second metal layer, wherein the second peripheral lead is connected between the second touch signal line and the second pin, and the pattern of the second anti-reflection layer corresponds to the pattern of the second metal layer and covers the second metal layer.
Further, the manufacturing method comprises the following steps:
and forming a second anti-corrosion protection layer covering the second anti-reflection layer on the first insulating layer, wherein the pattern of the second anti-corrosion protection layer corresponds to the pattern of the second anti-reflection layer and covers the second anti-reflection layer.
Further, the manufacturing method comprises the following steps:
forming a first insulating layer covering the first anti-reflection layer on the transparent substrate;
forming a second metal layer on the first insulating layer, etching the second metal layer to form a patterned second touch signal line, a second peripheral lead and a second pin, wherein the second peripheral lead is connected between the second touch signal line and the second pin;
and forming a second anti-reflection layer covering the second metal layer on the first insulating layer, and etching the second anti-reflection layer to enable the pattern of the second anti-reflection layer to correspond to the pattern of the second metal layer and cover the second metal layer.
Further, the manufacturing method comprises the following steps:
and forming a second anti-corrosion protection layer covering the second anti-reflection layer on the first insulating layer, wherein the pattern of the second anti-corrosion protection layer corresponds to the pattern of the second anti-reflection layer and covers the second anti-reflection layer.
Further, the second anti-reflection layer wraps the second touch signal line, the second peripheral lead and the top and side surfaces of the second pin.
The application also provides a touch substrate which is manufactured by adopting the manufacturing method.
The application has the beneficial effects that: the first metal layer and the first anti-reflection layer are subjected to wet etching treatment together, and then the first anti-reflection layer is subjected to dry etching treatment, so that sharp corners formed on the side surface of the first anti-reflection layer due to wet etching are removed, the undercut phenomenon of the first anti-reflection layer is eliminated, the problem that the first metal layer reflects light is avoided, the surface of the whole touch substrate is basically free of metal wires visible to human eyes, and the display effect is improved.
Drawings
Fig. 1 is a schematic structural diagram of a touch display device according to a first embodiment of the application.
Fig. 2 is a schematic plan view of a first metal layer according to a first embodiment of the present application.
Fig. 3 is a schematic plan view of a first anti-reflection layer and a first metal layer in a first embodiment of the present application.
Fig. 4a to 4h are schematic structural views illustrating a manufacturing process of a touch panel according to a first embodiment of the present application.
FIG. 5 is a schematic diagram of the structure of the first metal layer and the first anti-reflective layer corresponding to the step of FIG. 4c in the first embodiment of the present application.
FIG. 6 is a schematic diagram of the first metal layer and the first anti-reflective layer corresponding to the step of FIG. 4d in the first embodiment of the present application.
Fig. 7a to 7g are schematic structural views illustrating a manufacturing process of a touch panel according to a second embodiment of the present application.
Fig. 8a to 8h are schematic structural views illustrating a manufacturing process of a touch panel according to a third embodiment of the present application.
Detailed Description
In order to further describe the technical means and effects adopted by the application to achieve the preset aim, the following detailed description is given of the specific implementation, structure, characteristics and effects of the touch substrate and the manufacturing method thereof according to the application by combining the accompanying drawings and the preferred embodiment:
example one
Fig. 1 is a schematic structural diagram of a touch display device according to a first embodiment of the application. Fig. 2 is a schematic plan view of a first metal layer according to a first embodiment of the present application. Fig. 3 is a schematic plan view of a first anti-reflection layer and a first metal layer in a first embodiment of the present application. As shown in fig. 1 to 3, a touch substrate according to a first embodiment of the present application includes:
a transparent substrate 10. The transparent substrate 10 may be made of glass, quartz, silicon, acrylic, polycarbonate, or the like.
The first metal layer 11 on the transparent substrate 10 is disposed, and the first metal layer 11 includes a patterned first touch signal line 111, a first peripheral lead 112, and a first pin 113, where the first peripheral lead 112 is connected between the first touch signal line 111 and the first pin 113. The first metal layer 11 may be made of a metal such as copper (Cu), silver (Ag), chromium (Cr), molybdenum (Mo), aluminum (Al), titanium (Ti), manganese (Mn), nickel (Ni), or the like, or a combination of the above metals such as Al/Mo, cu/Mo, or the like. The number of the first pins 113 is plural, and the first pins are arranged side by side on one side of the transparent substrate 10.
The first anti-reflection layer 12 is disposed on the first metal layer 11, and the pattern of the first anti-reflection layer 12 corresponds to the pattern of the first metal layer 11 and covers the first metal layer 11. The first anti-reflection layer 12 is made of a ferrous metal oxide material, for example, the first light shielding layer 12 is molybdenum oxide (MoOx). The scattered light incident on the outside environment and inside the panel can be effectively absorbed, and the phenomenon of reflection of the metal wires in the first metal layer 11 is avoided.
A first insulating layer 13 is formed on the transparent substrate 10 to cover the first anti-reflection layer 12, and the material of the first insulating layer 13 is silicon oxide (SiOx), silicon nitride (SiNx), or a combination of both, however, the material of the first insulating layer 13 may be OC material.
In this embodiment, the touch substrate is a mutual capacitive touch substrate. Therefore, the touch substrate further includes a second metal layer 14 disposed on the first insulating layer 13, the second metal layer 14 includes a patterned second touch signal line 141, a second peripheral lead 142, and a second pin 143, and the second peripheral lead 142 is connected between the second touch signal line 141 and the second pin 143. The extending directions of the first touch signal lines 111 and the second touch signal lines 141 are perpendicular to each other, and the first touch signal lines 111 and the second touch signal lines 141 are electrodes of a grid structure, so that uniformity of light transmission can be improved, the grid structures between two adjacent first touch signal lines 111 are disconnected from each other (not shown), and the grid structures between two adjacent second touch signal lines 141 are disconnected from each other (not shown). The second metal layer 14 may be made of a metal such as copper (Cu), silver (Ag), chromium (Cr), molybdenum (Mo), aluminum (Al), titanium (Ti), manganese (Mn), nickel (Ni), or the like, or a combination of the above metals such as Al/Mo, cu/Mo, or the like. The second pins 143 are plural in number and are disposed side by side on one side of the transparent substrate 10. Of course, in other embodiments, the touch substrate may be a self-contained touch substrate, and thus the second metal layer 14 is not required to be fabricated.
The second anti-reflection layer 15 is disposed on the second metal layer 14, and the pattern of the second anti-reflection layer 15 corresponds to the pattern of the second metal layer 14 and covers the second metal layer 14. The second anti-reflection layer 15 is made of a ferrous metal oxide material, for example, the second anti-reflection layer 15 is molybdenum oxide (MoOx). The second light shielding layer 15 can effectively absorb the scattered light of the external environment light incident on the panel inside, and avoids the phenomenon of reflection of the metal wires in the second metal layer 14.
A second insulating layer 16 is formed on the first insulating layer 13 to cover the second anti-reflection layer 15, and the material of the second insulating layer 16 is silicon oxide (SiOx), silicon nitride (SiNx), or a combination of both, however, the material of the second insulating layer 16 may be OC material.
As shown in fig. 1, the present application further provides a touch display device, which includes a color film substrate 20, an array substrate 40 disposed opposite to the color film substrate 20, and a liquid crystal layer 30 disposed between the color film substrate 20 and the array substrate 40, wherein one side of the color film substrate 20 away from the liquid crystal layer 30 is provided with the touch substrate as described above. An upper polarizer 51 is arranged on one side of the touch substrate far away from the color film substrate 20, a lower polarizer 52 is arranged on the array substrate 40, and a light transmission axis of the upper polarizer 51 is perpendicular to a light transmission axis of the lower polarizer 52. The liquid crystal molecules in the liquid crystal layer 30 are positive liquid crystal molecules (liquid crystal molecules with positive dielectric anisotropy), and in the initial state, the positive liquid crystal molecules are in a lying posture, and the alignment direction of the positive liquid crystal molecules near the color film substrate 20 is parallel to the alignment direction of the positive liquid crystal molecules near the array substrate 40. It is understood that the array substrate 40 and the color film substrate 20 are further provided with an alignment layer at a layer facing the liquid crystal layer 30, so as to align the positive liquid crystal molecules in the liquid crystal layer 30.
The color film substrate 20 is provided with a color resistance layer 22 arranged in an array and a black matrix 21 for spacing the color resistance layer 22, wherein the color resistance layer 22 comprises red (R), green (G) and blue (B) color resistance materials, and sub-pixel units of the red (R), green (G) and blue (B) colors are correspondingly formed.
The array substrate 40 is provided with a pixel electrode 42 and a common electrode 41 on a side facing the liquid crystal layer 30, and the common electrode 41 is positioned on different layers from the pixel electrode 42 and insulated and isolated by an insulating layer. The common electrode 41 is shown in fig. 1 below the pixel electrode 42, the common electrode 41 is a planar electrode disposed entirely, and the pixel electrode 42 is a slit electrode having a plurality of electrode bars disposed entirely within each pixel unit to form a fringe field switching pattern (Fringe Field Switching, FFS). Of course, the common electrode 41 may also be located above the pixel electrode 42, the pixel electrode 42 is a block electrode integrally disposed in each pixel unit, and the common electrode 41 is a slit electrode having a plurality of electrode strips to form another fringe field switching mode (Fringe Field Switching, FFS). In other embodiments, the pixel electrode 42 and the common electrode 41 may be located at the same layer, but they are insulated from each other, each of the pixel electrode 42 and the common electrode 41 may include a plurality of electrode bars, and the electrode bars of the pixel electrode 42 and the electrode bars of the common electrode 41 are alternately arranged with each other to form an In-Plane Switching (IPS); alternatively, in other embodiments, the array substrate is provided with the pixel electrode 42 on a side facing the liquid crystal layer 30, and the color film substrate 20 is provided with the common electrode 41 on a side facing the liquid crystal layer 30 to form a TN mode or a VA mode.
The display device further includes a backlight module 60, and the backlight module 60 is located below the array substrate 40 and is used for providing a backlight source for the whole display device.
Fig. 4a to 4h are schematic structural views illustrating a manufacturing process of a touch panel according to a first embodiment of the present application. As shown in fig. 4a to 4h, a method for manufacturing a touch substrate is further provided in an embodiment of the present application, which is used for manufacturing the touch substrate described above. The manufacturing method comprises the following steps:
a transparent substrate 10 is provided. The transparent substrate 10 may be made of glass, quartz, silicon, acrylic, polycarbonate, or the like.
As shown in fig. 4a, a first metal layer 11 and a first anti-reflection layer 12 are sequentially formed on a transparent substrate 10 over the entire surface thereof. The first metal layer 11 may employ a metal such as copper (Cu), silver (Ag), chromium (Cr), molybdenum (Mo), aluminum (Al), titanium (Ti), manganese (Mn), nickel (Ni), etc., or a combination of the above metals such as Al/Mo, cu/Mo, etc. The first anti-reflection layer 12 is made of a ferrous metal oxide material, for example, the first light shielding layer 12 is molybdenum oxide (MoOx).
As shown in fig. 4b, a photoresist layer 2 is formed on the first anti-reflection layer 12, and patterning (exposure, development) is performed to block the photoresist layer 2 using the mask 1.
As shown in fig. 4c and 4d, with the patterned photoresist layer 2 as a mask, WET Etching (WET) is performed on the first metal layer 11 and the first anti-reflective layer 12 together, and then Dry Etching (DET) is performed on the first anti-reflective layer 12, so that the first metal layer 11 forms a patterned first touch signal line 111, a first peripheral lead 112 and a first lead 113, the first peripheral lead 112 is connected between the first touch signal line 111 and the first lead 113, and the pattern of the first anti-reflective layer 12 corresponds to the pattern of the first metal layer 11 and covers the first metal layer 11. Wherein the etching gas of the dry etching is at least two mixed gases of Cl2, SF6 and O2.
FIG. 5 is a schematic illustration of the first metal layer and the first anti-reflective layer corresponding to the step of FIG. 4c in the first embodiment of the present applicationA drawing. FIG. 6 is a schematic diagram of the first metal layer and the first anti-reflective layer corresponding to the step of FIG. 4d in the first embodiment of the present application. As shown in fig. 5, when the first metal layer 11 and the first anti-reflection layer 12 are subjected to wet etching together, the etching rate of the first metal layer 11 is the following because the etching rates of the first metal layer 11 and the first anti-reflection layer 12 are differentThe etching rate of the first anti-reflection layer 12 is +.>The first metal layer 11 may be Al/Mo, and the film thickness of the metal aluminum layer isThe film thickness of the metal molybdenum layer is->The film thickness of the first anti-reflection layer 12 is +.>So that an undercut problem occurs after etching. As shown in FIG. 6, after the first anti-reflection layer 12 is subjected to the dry etching treatment, the etching rate of the dry etching to the first anti-reflection layer 12 is about +.>The etching rate of the first metal layer 11 is small and negligible, so that there is almost no damage to the first metal layer 11, thereby eliminating the undercut phenomenon.
As shown in fig. 4e, after the dry etching treatment is completed on the first anti-reflection layer 12, the photoresist layer 2 is peeled off.
As shown in fig. 4f, a first insulating layer 13 covering the first anti-reflection layer 12 is formed on the transparent substrate 10. The material of the first insulating layer 13 is silicon oxide (SiOx), silicon nitride (SiNx), or a combination of both, and of course, the material of the first insulating layer 13 may be OC material.
As shown in fig. 4g, the entire second metal layer 14 and the second anti-reflection layer 15 are sequentially formed on the first insulating layer 13. The second metal layer 14 and the second anti-reflection layer 15 are etched by the same process as the first metal layer 11 and the first anti-reflection layer 12, for example, a patterned photoresist layer 2 is formed on the second anti-reflection layer 15, and the second metal layer 14 and the second anti-reflection layer 15 are wet etched together with the patterned photoresist layer 2 as a mask, and then the second anti-reflection layer 15 is dry etched. The second metal layer 14 is formed into a patterned second touch signal line 141, a second peripheral lead 142 and a second lead 143, the second peripheral lead 142 is connected between the second touch signal line 141 and the second lead 143, and the pattern of the second anti-reflection layer 15 corresponds to the pattern of the second metal layer 14 and covers the second metal layer 14. Of course, in other embodiments, the entire second metal layer 14 may be formed on the first insulating layer 13, and the second metal layer 14 may be etched. After the second metal layer 14 is etched, a second anti-reflection layer 15 covering the second metal layer 14 is formed on the first insulating layer 13, and the second anti-reflection layer 15 is etched, so that the pattern of the second anti-reflection layer 15 corresponds to the pattern of the second metal layer 14 and covers the second metal layer 14.
As shown in fig. 4h, a second insulating layer 16 is formed on the first insulating layer 13 to cover the second anti-reflection layer 15, and the material of the second insulating layer 16 is silicon oxide (SiOx), silicon nitride (SiNx), or a combination of both, however, the material of the second insulating layer 16 may be OC material.
Example two
Fig. 7a to 7g are schematic structural views illustrating a manufacturing process of a touch panel according to a second embodiment of the present application. As shown in fig. 7a to 7g, the touch substrate and the manufacturing method thereof provided in the second embodiment of the present application are substantially the same as those in the first embodiment (fig. 1 to 6), except that in the present embodiment:
the manufacturing method of the touch substrate in the embodiment comprises the following steps:
a transparent substrate 10 is provided. The transparent substrate 10 may be made of glass, quartz, silicon, acrylic, polycarbonate, or the like.
As shown in fig. 7a, an entire first metal layer 11 is formed on a transparent substrate 10. The first metal layer 11 may be made of a metal such as copper (Cu), silver (Ag), chromium (Cr), molybdenum (Mo), aluminum (Al), titanium (Ti), manganese (Mn), nickel (Ni), or the like, or a combination of the above metals such as Al/Mo, cu/Mo, or the like.
As shown in fig. 7b and 7c, a photoresist layer 2 is formed on the first metal layer 11, and patterning (exposure, development) is performed to block the photoresist layer 2 using a mask. With the patterned photoresist layer 2 as a mask, the first metal layer 11 is etched first, so that the first metal layer 11 forms a patterned first touch signal line 111, a first peripheral lead 112 and a first lead 113, and the first peripheral lead 112 is connected between the first touch signal line 111 and the first lead 113. The photoresist layer 2 is then stripped off.
As shown in fig. 7d and 7e, a first anti-reflection layer 12 is formed on the transparent substrate 10 to cover the first metal layer 11, and a mask process (including photoresist application, exposure, development, etching and photoresist removal) is used to etch the first anti-reflection layer 12, so that the pattern of the first anti-reflection layer 12 corresponds to the pattern of the first metal layer 11 and covers the first metal layer 11. The first anti-reflection layer 12 is made of a ferrous metal oxide material, for example, the first light shielding layer 12 is molybdenum oxide (MoOx).
Further, the first anti-reflection layer 12 wraps the first touch signal line 111, the first peripheral lead 112, and the top and side surfaces of the first lead 113, so that the first anti-reflection layer 12 can protect the electrodes in the first metal layer 11.
As shown in fig. 7f, a first insulating layer 13 covering the first anti-reflection layer 12 is formed on the transparent substrate 10. The material of the first insulating layer 13 is silicon oxide (SiOx), silicon nitride (SiNx), or a combination of both.
As shown in fig. 7g, a second metal layer 14 is formed on the first insulating layer 13, and a mask process is used to etch the second metal layer 14 first, so that the second metal layer 14 forms patterned second touch signal lines 141, second peripheral leads 142 and second pins 143, and the second peripheral leads 142 are connected between the second touch signal lines 141 and the second pins 143. After the second metal layer 14 is etched, a second anti-reflection layer 15 covering the second metal layer 14 is formed on the first insulating layer 13, and the second anti-reflection layer 15 is etched by using a mask process, so that the pattern of the second anti-reflection layer 15 corresponds to the pattern of the second metal layer 14 and covers the second metal layer 14. Preferably, the second anti-reflection layer 15 wraps the second touch signal line 141, the second peripheral lead 142, and the top and side surfaces of the second lead 143, so that the first anti-reflection layer 12 may protect the electrodes in the first metal layer 11. Of course, in other embodiments, the entire second metal layer 14 and the second anti-reflection layer 15 may be sequentially formed on the first insulating layer 13, the second metal layer 14 and the second anti-reflection layer 15 are first wet etched together, and then the second anti-reflection layer 15 is dry etched, so that the pattern of the second anti-reflection layer 15 corresponds to the pattern of the second metal layer 14 and covers the second metal layer 14.
In this embodiment, the first metal layer 11, the first anti-reflection layer 12, the second metal layer 14 and the second anti-reflection layer 15 are etched by using a mask process, so that the undercut problem is avoided, the first anti-reflection layer 12 can completely encapsulate the electrode in the first metal layer 11, the second anti-reflection layer 15 can completely encapsulate the electrode in the second metal layer 14, and a good guarantee effect is achieved on the electrodes in the first metal layer 11 and the second metal layer 14.
Those skilled in the art will understand that the other structures and working principles of the present embodiment are the same as those of the first embodiment, and will not be described herein.
Example III
Fig. 8a to 8h are schematic structural views illustrating a manufacturing process of a touch panel according to a third embodiment of the present application. As shown in fig. 8a to 8h, the touch substrate and the manufacturing method thereof provided in the third embodiment of the present application are substantially the same as those in the first embodiment (fig. 1 to 6) and the second embodiment (fig. 7a to 7 g), except that in the present embodiment:
a first anti-corrosion protection layer 17 covering the first anti-reflection layer 12 is formed on the transparent substrate 10, and the pattern of the first anti-corrosion protection layer 17 corresponds to the pattern of the first anti-reflection layer 12 and covers the first anti-reflection layer 12. Since the first anti-reflection layer 12 has certain water absorption and is easy to be corroded, the first anti-corrosion protection layer 17 is arranged on the first anti-reflection layer 12, so that the circuit in the first anti-reflection layer 12 and the first metal layer 11 can be protected, the corrosion of environmental water vapor is prevented, and the first anti-reflection layer has good conductive property and the like. The first anticorrosive protective layer 17 is, for example, ln-IZO or Ln-IGZO, etc.
Further, a second anti-corrosion protection layer 18 covering the second anti-reflection layer 15 is formed on the first insulating layer 13, and the pattern of the second anti-corrosion protection layer 18 corresponds to the pattern of the second anti-reflection layer 15 and covers the second anti-reflection layer 15. Since the second anti-reflection layer 15 has a certain water absorption and is easy to be corroded, the second anti-corrosion protection layer 18 is arranged on the second anti-reflection layer 15, so that the protection effect on the circuits in the second anti-reflection layer 15 and the second metal layer 14 can be achieved, the corrosion of environmental water vapor is prevented, and the second anti-reflection layer has good conductive characteristics and the like. The second anticorrosive protective layer 18 is, for example, ln-IZO or Ln-IGZO.
As shown in fig. 8a to 8h, the embodiment of the application further provides a method for manufacturing a touch substrate, which is used for manufacturing the touch substrate. The manufacturing method comprises the following steps:
as shown in fig. 8a, a first metal layer 11, a first anti-reflection layer 12, and a first anti-corrosion protection layer 17 are sequentially formed over a transparent substrate 10. The first metal layer 11 may employ a metal such as copper (Cu), silver (Ag), chromium (Cr), molybdenum (Mo), aluminum (Al), titanium (Ti), manganese (Mn), nickel (Ni), etc., or a combination of the above metals such as Al/Mo, cu/Mo, etc. The first anti-reflection layer 12 is made of a ferrous metal oxide material, for example, the first light shielding layer 12 is molybdenum oxide (MoOx). The first anticorrosive protective layer 17 is, for example, ln-IZO or Ln-IGZO, etc.
As shown in fig. 8b, a photoresist layer 2 is formed on the first anti-corrosion protection layer 17, and patterning (exposure, development) is performed to block the photoresist layer 2 by using the mask 1.
As shown in fig. 8c and 8d, with the patterned photoresist layer 2 as a mask, WET Etching (WET) is performed on the first metal layer 11, the first anti-reflection layer 12 and the first anti-corrosion protection layer 17 together, then Dry Etching (DET) is performed on the first anti-reflection layer 12, so that the first metal layer 11 forms a patterned first touch signal line 111, a first peripheral lead 112 and a first lead 113, the first peripheral lead 112 is connected between the first touch signal line 111 and the first lead 113, the pattern of the first anti-reflection layer 12 corresponds to the pattern of the first metal layer 11 and covers the first metal layer 11, and the pattern of the first anti-corrosion protection layer 17 corresponds to the pattern of the first anti-reflection layer 12 and covers the first anti-reflection layer 12. Wherein the etching gas of the dry etching is at least two mixed gases of Cl2, SF6 and O2.
As shown in fig. 8e, after the dry etching treatment is completed on the first anti-reflection layer 12, the photoresist layer 2 is peeled off.
As shown in fig. 8f, a first insulating layer 13 covering the first anti-corrosion protective layer 17 is formed on the transparent substrate 10. The material of the first insulating layer 13 is silicon oxide (SiOx), silicon nitride (SiNx), or a combination of both.
As shown in fig. 8g, a second metal layer 14, a second anti-reflection layer 15, and a second anti-corrosion protection layer 18 are sequentially formed over the first insulating layer 13. The second metal layer 14, the second anti-reflection layer 15 and the second anti-corrosion protection layer 18 are etched by the same process as the first metal layer 11, the first anti-reflection layer 12 and the first anti-corrosion protection layer 17, for example, a patterned photoresist layer 2 is formed on the second anti-corrosion protection layer 18, the patterned photoresist layer 2 is used as a shielding layer, the second metal layer 14, the second anti-reflection layer 15 and the second anti-corrosion protection layer 18 are wet etched together, and then the second anti-reflection layer 15 is dry etched. The second metal layer 14 is patterned to form a second touch signal line 141, a second peripheral lead 142 and a second lead 143, the second peripheral lead 142 is connected between the second touch signal line 141 and the second lead 143, the pattern of the second anti-reflection layer 15 corresponds to the pattern of the second metal layer 14 and covers the second metal layer 14, and the pattern of the second anti-corrosion protection layer 18 corresponds to the pattern of the second anti-reflection layer 15 and covers the second anti-reflection layer 15.
As shown in fig. 8h, a second insulating layer 16 covering the second anti-corrosion protection layer 18 is formed on the first insulating layer 13, and the material of the second insulating layer 16 is silicon oxide (SiOx), silicon nitride (SiNx), or a combination of both.
Of course, in other embodiments, the first and second anti-corrosion protection layers 17 and 18 may be etched by using a masking process, respectively.
Those skilled in the art will understand that the other structures and working principles of the present embodiment are the same as those of the first and second embodiments, and will not be described herein.
In this document, terms such as up, down, left, right, front, rear, etc. are defined by the positions of the structures in the drawings and the positions of the structures with respect to each other, for the sake of clarity and convenience in expressing the technical solution. It should be understood that the use of such orientation terms should not limit the scope of the claimed application. It should also be understood that the terms "first" and "second," etc., as used herein, are used merely for distinguishing between names and not for limiting the number and order.
The present application is not limited to the preferred embodiments, but is capable of modification and variation in detail, and other modifications and variations can be made by those skilled in the art without departing from the scope of the present application.

Claims (10)

1. The manufacturing method of the touch substrate is characterized by comprising the following steps of:
providing a transparent substrate (10);
sequentially forming a first metal layer (11) and a first anti-reflection layer (12) on the transparent substrate (10);
the method comprises the steps of firstly carrying out wet etching treatment on the first metal layer (11) and the first anti-reflection layer (12) together, then carrying out dry etching treatment on the first anti-reflection layer (12) to enable the first metal layer (11) to form a patterned first touch signal line (111), a first peripheral lead (112) and a first pin (113), wherein the first peripheral lead (112) is connected between the first touch signal line (111) and the first pin (113), and the pattern of the first anti-reflection layer (12) corresponds to the pattern of the first metal layer (11) and covers the first metal layer (11).
2. The manufacturing method of the touch substrate is characterized by comprising the following steps of:
providing a transparent substrate (10);
forming a first metal layer (11) on the transparent substrate (10), etching the first metal layer (11) to form a patterned first touch signal line (111), a first peripheral lead (112) and a first pin (113) on the first metal layer (11), wherein the first peripheral lead (112) is connected between the first touch signal line (111) and the first pin (113);
and forming a first anti-reflection layer (12) covering the first metal layer (11) on the transparent substrate (10), and etching the first anti-reflection layer (12) to enable the pattern of the first anti-reflection layer (12) to correspond to the pattern of the first metal layer (11) and cover the first metal layer (11).
3. The method for manufacturing a touch substrate according to claim 2, wherein the first anti-reflection layer (12) encapsulates the first touch signal line (111), the first peripheral lead (112), and top and side surfaces of the first pin (113).
4. The method for manufacturing a touch substrate according to claim 1 or 2, wherein the method for manufacturing the touch substrate comprises:
a first anti-corrosion protection layer (17) covering the first anti-reflection layer (12) is formed on the transparent substrate (10), and the pattern of the first anti-corrosion protection layer (17) corresponds to the pattern of the first anti-reflection layer (12) and covers the first anti-reflection layer (12).
5. The method for manufacturing a touch substrate according to claim 1 or 2, wherein the method for manufacturing the touch substrate comprises:
forming a first insulating layer (13) covering the first anti-reflection layer (12) on the transparent substrate (10);
sequentially forming a second metal layer (14) and a second anti-reflection layer (15) on the first insulating layer (13);
the second metal layer (14) and the second anti-reflection layer (15) are subjected to wet etching together, and then the second anti-reflection layer (15) is subjected to dry etching, so that the second metal layer (14) forms a patterned second touch signal line (141), a second peripheral lead (142) and a second pin (143), the second peripheral lead (142) is connected between the second touch signal line (141) and the second pin (143), and the pattern of the second anti-reflection layer (15) corresponds to the pattern of the second metal layer (14) and covers the second metal layer (14).
6. The method for manufacturing a touch substrate according to claim 5, wherein the method for manufacturing the touch substrate comprises:
-forming a second anti-corrosion protection layer (18) on the first insulating layer (13) covering the second anti-reflection layer (15), the pattern of the second anti-corrosion protection layer (18) corresponding to the pattern of the second anti-reflection layer (15) and covering the second anti-reflection layer (15).
7. The method for manufacturing a touch substrate according to claim 1 or 2, wherein the method for manufacturing the touch substrate comprises:
forming a first insulating layer (13) covering the first anti-reflection layer (12) on the transparent substrate (10);
forming a second metal layer (14) on the first insulating layer (13), etching the second metal layer (14) to form a patterned second touch signal line (141), a second peripheral lead (142) and a second pin (143) on the second metal layer (14), wherein the second peripheral lead (142) is connected between the second touch signal line (141) and the second pin (143);
and forming a second anti-reflection layer (15) covering the second metal layer (14) on the first insulating layer (13), and etching the second anti-reflection layer (15) to enable the pattern of the second anti-reflection layer (15) to correspond to the pattern of the second metal layer (14) and cover the second metal layer (14).
8. The method for manufacturing a touch substrate according to claim 7, wherein the method for manufacturing the touch substrate comprises:
-forming a second anti-corrosion protection layer (18) on the first insulating layer (13) covering the second anti-reflection layer (15), the pattern of the second anti-corrosion protection layer (18) corresponding to the pattern of the second anti-reflection layer (15) and covering the second anti-reflection layer (15).
9. The method of manufacturing a touch substrate according to claim 7, wherein the second anti-reflection layer (15) encapsulates the top surface and the side surface of the second touch signal line (141), the second peripheral lead (142) and the second pin (143).
10. A touch substrate manufactured by the manufacturing method according to any one of claims 1 to 9.
CN202311107929.XA 2023-08-30 2023-08-30 Touch substrate and manufacturing method thereof Pending CN117148996A (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
CN202311107929.XA CN117148996A (en) 2023-08-30 2023-08-30 Touch substrate and manufacturing method thereof

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CN117148996A true CN117148996A (en) 2023-12-01

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