CN117148689B - Simulation processing method, device, equipment and medium for photoetching process - Google Patents
Simulation processing method, device, equipment and medium for photoetching process Download PDFInfo
- Publication number
- CN117148689B CN117148689B CN202311433814.XA CN202311433814A CN117148689B CN 117148689 B CN117148689 B CN 117148689B CN 202311433814 A CN202311433814 A CN 202311433814A CN 117148689 B CN117148689 B CN 117148689B
- Authority
- CN
- China
- Prior art keywords
- light intensity
- intensity distribution
- distribution data
- data
- acquiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 90
- 238000004088 simulation Methods 0.000 title claims abstract description 47
- 238000001259 photo etching Methods 0.000 title claims abstract description 30
- 238000003672 processing method Methods 0.000 title claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 79
- 238000002834 transmittance Methods 0.000 claims abstract description 77
- 238000012545 processing Methods 0.000 claims abstract description 25
- 230000006870 function Effects 0.000 claims description 51
- 238000000206 photolithography Methods 0.000 claims description 23
- 238000004590 computer program Methods 0.000 claims description 17
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a simulation processing method, a device, equipment and a medium of a photoetching process, which comprise the following steps: acquiring initial light intensity distribution data; based on the initial light intensity distribution data, the width of the scattering bars and/or the light transmittance of the photomask are adjusted to obtain corresponding intermediate light intensity distribution data; acquiring corresponding target width and target light transmittance based on the intermediate light intensity distribution data; and adjusting the width of the scattering bars in the photoetching process to be the target width and/or the light transmittance of the photomask to be the target light transmittance, and completing the simulation processing of the photoetching process so as to improve the condition of the photoresist bulge. The simulation processing method, the simulation processing device, the simulation processing equipment and the simulation processing medium for the photoetching process can improve the problem that the photoresist bulge occurs in the photoetching process.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a method, an apparatus, a device, and a medium for performing simulation processing on a photolithography process.
Background
Photolithography (photolithography) processes provide a sparse pattern on a photoresist layer using exposure and development, and then transfer the sparse pattern on a photomask to a wafer through an etching process. In the existing photoetching process, after the development process, the condition that the consumption of the photoresist at the scattering bar area is inconsistent with that of the photoresist at other areas possibly occurs, so that the problem of photoresist bulge at the scattering bar area is caused, and finally, the yield loss caused by the etching process can be influenced. Therefore, there is a need for improvement.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a simulation processing method, apparatus, device and medium for a photolithography process, which can improve the problem of occurrence of photoresist protrusions in the photolithography process.
To achieve the above and other related objects, the present invention provides a simulation processing method of a photolithography process, including:
acquiring initial light intensity distribution data, wherein the initial light intensity distribution data comprises initial light intensity distribution data of a convex part of the photoresist and initial light intensity distribution data of a flat part of the photoresist;
based on the initial light intensity distribution data, the corresponding intermediate light intensity distribution data are obtained by adjusting the width of the scattering bars and/or the light transmittance of the light cover, wherein the intermediate light intensity distribution data are divided into first-type intermediate light intensity distribution data and second-type intermediate light intensity distribution data;
acquiring corresponding target width and target light transmittance based on the intermediate light intensity distribution data;
and adjusting the width of the scattering bars in the photoetching process to be the target width and/or the light transmittance of the photomask to be the target light transmittance, and completing the simulation processing of the photoetching process so as to improve the condition of the photoresist bulge.
In an embodiment of the present invention, the step of obtaining the corresponding intermediate light intensity distribution data by adjusting the width of the scattering bar and/or the light transmittance of the photomask based on the initial light intensity distribution data includes:
based on the initial light intensity distribution data, obtaining first-type intermediate light intensity distribution data by adjusting the width of the scattering bar, wherein the first-type intermediate light intensity distribution data comprises first-type intermediate light resistance bulge light intensity distribution data and first-type intermediate flat light intensity distribution data;
and obtaining second-type intermediate light intensity distribution data by adjusting the light transmittance of the photomask based on the initial light intensity distribution data, wherein the second-type intermediate light intensity distribution data comprises second-type intermediate light resistance bulge light intensity distribution data and second-type intermediate flat light intensity distribution data.
In an embodiment of the present invention, the step of obtaining the corresponding target width and target light transmittance based on the intermediate light intensity distribution data includes:
acquiring a light intensity stability function based on the intermediate light intensity distribution data;
and acquiring an optimal solution according to the light intensity stability function to obtain a target width and a target light transmittance corresponding to the optimal solution.
In an embodiment of the present invention, the step of obtaining the light intensity stability function based on the intermediate light intensity distribution data includes:
acquiring difference value data of light intensity distribution data of a convex part of the middle light resistance and light intensity distribution data of a flat part of the middle light resistance;
acquiring accumulated data of light intensity distribution data of a convex part of the middle light resistance and light intensity distribution data of a flat part of the middle light resistance;
and acquiring a light intensity stability function based on the difference data and the accumulated data.
In one embodiment of the present invention, the difference data bias is expressed as: bias= | mean (background) -mean (SRAF) |, where,
mean (background) as an average value of the first-type intermediate flat portion light intensity distribution data or an average value of the second-type intermediate flat portion light intensity distribution data;
mean (SRAF) is expressed as an average value of light intensity distribution data of the first type of intermediate photoresist relief portion or an average value of light intensity distribution data of the second type of intermediate photoresist relief portion.
In one embodiment of the present invention, the light intensity stability function F (i) is expressed as: f (i) =1sig/(1-bias), where 1sig is represented as the sum of the standard deviation of the light intensity of the background region and the SRAF region, the background region is represented as a region on the mask surface except for the scattering bars and the main pattern portion, and the SRAF region is represented as a region on the mask surface where the scattering bars are partially.
In an embodiment of the present invention, the step of obtaining an optimal solution according to the light intensity stability function to obtain a target width and a target light transmittance corresponding to the optimal solution includes:
based on the first type of intermediate light intensity distribution data, acquiring a minimum value of the corresponding light intensity stability function, representing the minimum value as an optimal solution, and acquiring a target width of a corresponding scattering bar according to the optimal solution;
and acquiring the minimum value of the corresponding light intensity stability function based on the second-class intermediate light intensity distribution data, representing the minimum value as an optimal solution, and acquiring the target light transmittance of the corresponding photomask according to the optimal solution.
The invention also provides a simulation processing device of the photoetching process, which comprises:
the data acquisition module is used for acquiring initial light intensity distribution data, wherein the initial light intensity distribution data comprise initial light intensity distribution data of a convex part of the photoresist and initial light intensity distribution data of a flat part of the photoresist;
the data adjustment module is used for obtaining corresponding intermediate light intensity distribution data by adjusting the width of the scattering bar and/or the light transmittance of the photomask based on the initial light intensity distribution data, wherein the intermediate light intensity distribution data is divided into first intermediate light intensity distribution data and second intermediate light intensity distribution data;
the data processing module is used for acquiring corresponding target width and target light transmittance based on the intermediate light intensity distribution data; and
and the data simulation module is used for adjusting the width of the scattering bar in the photoetching process to be the target width and/or adjusting the light transmittance of the photomask to be the target light transmittance, and completing the simulation processing of the photoetching process so as to improve the condition of the photoresist bulge.
The invention also provides a computer device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, the processor implementing the steps of the simulation processing method of the lithographic process when executing the computer program.
The present invention also provides a computer readable storage medium storing a computer program which, when executed by a processor, implements the steps of a simulation processing method of a lithographic process.
As described above, the simulation processing method, device, equipment and medium for the photoetching process provided by the invention have the unexpected effect that the photoresist consumption of the wafer area corresponding to the scattering bar and the wafer back Jing Guangjiang intensity area can be relatively close by adjusting the width of the scattering bar and/or the light transmittance of the photomask, so that the problem that the photoresist bulges on the wafer surface in the photoetching process are effectively solved, the stability of the photoetching process is improved, the stability of the etching process is ensured, and the yield is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a simulation method of a lithographic process according to the present invention;
FIG. 2 is a schematic diagram showing initial light intensity distribution data in a simulation processing method of a photolithography process according to the present invention;
FIG. 3 is a schematic view of a photoresist bump in a simulation method of a photolithography process according to the present invention;
FIG. 4 is a flowchart showing step S20 in FIG. 1;
FIG. 5 is a schematic diagram showing first intermediate light intensity distribution data in a simulation method of a photolithography process according to the present invention;
FIG. 6 is a schematic view of a part of the enlarged structure of FIG. 5;
FIG. 7 is a schematic diagram showing a second type of intermediate light intensity distribution data in a simulation method of a photolithography process according to the present invention;
FIG. 8 is a schematic view of a part of the enlarged structure of FIG. 7;
FIG. 9 is a flowchart showing step S30 in FIG. 1;
fig. 10 is a flowchart showing step S31 in fig. 9;
FIG. 11 is a flowchart showing step S32 in FIG. 9;
FIG. 12 is a graph showing the difference in light intensity of scattering bars of different widths in a simulation method of photolithography according to the present invention;
FIG. 13 is a schematic diagram showing the light intensity stability function of scattering bars based on different widths in a simulation processing method of a photolithography process according to the present invention;
FIG. 14 is a graph showing the light intensity differences of different transmittance photomasks in a simulation processing method of a photolithography process according to the present invention;
FIG. 15 is a graph showing the light intensity stability function of a photomask based on different light transmittance in a simulation processing method of a photolithography process according to the present invention;
FIG. 16 is a schematic view of a lithographic process simulation apparatus according to the present invention;
FIG. 17 is a schematic diagram of a computer device according to the present invention;
fig. 18 is a schematic diagram showing another configuration of a computer device according to the present invention.
Description of element numbers:
110. initial flat portion light intensity distribution data; 120. light intensity distribution data of the convex part of the initial photoresist; 130. a photoresist bump;
210. intermediate light intensity distribution data of the first type; 220. light intensity distribution data of the convex part of the first type of intermediate photoresist; 230. light intensity distribution data of the middle flat portion of the first type;
310. intermediate light intensity distribution data of the second type; 320. light intensity distribution data of the convex part of the second type of intermediate photoresist; 330. light intensity distribution data of the middle flat part of the second class;
410. a data acquisition module; 420. a data adjustment module; 430. a data processing module; 440. and a data simulation module.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 and 3, the present invention provides a simulation method of a photolithography process, which can be applied to a photolithography process of a wafer, so that after the wafer is subjected to a developing process, a problem of occurrence of photoresist protrusions 130 on a wafer corresponding to a scattering bar can be improved. The processing method can comprise the following steps:
s10, acquiring initial light intensity distribution data, wherein the initial light intensity distribution data comprise initial light intensity distribution data of a convex part of the photoresist and initial light intensity distribution data of a flat part of the photoresist;
step S20, based on the initial light intensity distribution data, the corresponding intermediate light intensity distribution data are obtained by adjusting the width of the scattering bars and/or the light transmittance of the photomask, wherein the intermediate light intensity distribution data are divided into first-type intermediate light intensity distribution data and second-type intermediate light intensity distribution data;
step S30, acquiring corresponding target width and target light transmittance based on the intermediate light intensity distribution data;
and S40, adjusting the width of the scattering bars in the photoetching process to be the target width and/or adjusting the light transmittance of the photomask to be the target light transmittance, and completing the simulation processing of the photoetching process so as to improve the condition of the photoresist bulge.
In one embodiment of the present invention, when the step S10 is performed and the problem of the photoresist bump is to be improved, the light intensity distribution on the surface of the photoresist may be simulated by software, so as to obtain corresponding initial light intensity distribution data. Specifically, as shown in fig. 2 and 3, the initial light intensity distribution data may include initial photoresist convex portion light intensity distribution data 120 and initial flat portion light intensity distribution data 110. The initial flat portion light intensity distribution data 110 may be represented as light intensity distribution data of an area on the mask surface except for the scattering bars and the main pattern portion, i.e., a background light intensity. The initial photoresist relief segment light intensity distribution data 120 may be represented as light intensity distribution data of a scattering bar segment region on the reticle surface. The area of the mask surface except the scattering bars and the main pattern portion is hereinafter referred to as a background area, and the scattering bar portion area of the mask surface is hereinafter referred to as an SRAF area. At the junction of 180 ° and 0 °, the light intensity of the background region and the SRAF region is destructively interfered, so that the light intensity of the SRAF region is reduced, a slope is further formed, and after the developing process, a photoresist bump 130 is formed on the wafer corresponding to the SRAF region.
Referring to fig. 4, in one embodiment of the present invention, when step S20 is performed, specifically, step S20 may include the following steps:
step S21, based on the initial light intensity distribution data, obtaining first-type intermediate light intensity distribution data by adjusting the width of the scattering bar, wherein the first-type intermediate light intensity distribution data comprises first-type intermediate light resistance bulge light intensity distribution data and first-type intermediate flat light intensity distribution data;
step S22, based on the initial light intensity distribution data, obtaining second-type intermediate light intensity distribution data by adjusting the light transmittance of the photomask, wherein the second-type intermediate light intensity distribution data comprises second-type intermediate photoresist bulge light intensity distribution data and second-type intermediate flat light intensity distribution data.
Referring to fig. 5 and 6, in an embodiment of the present invention, when step S21 is performed, specifically, based on the initial flat portion light intensity distribution data 110 and the initial photoresist bump portion light intensity distribution data 120, different first type intermediate light intensity distribution data 210 can be obtained by inputting scattering bars with different widths on software. The first type of intermediate light intensity distribution data 210 may include first type of intermediate photoresist protrusion portion light intensity distribution data 220 and first type of intermediate flat portion light intensity distribution data 230. For example, in an environment where the light transmittance of the photomask is 6%, the widths of the scattering bars can be sequentially set to 20nm, 22nm, 24nm, 26nm, 28nm, 30nm, 32nm, and the like, and the light intensity difference between the background region and the SRAF region can be adjusted by changing the widths of the scattering bars, so that the light resistance consumption of the background region is basically consistent with that of the SRAF region, and the problem of light resistance protrusion is improved. By changing the width of the scattering bars, the corresponding first type of intermediate light intensity distribution data 210 can be obtained. When the different first-type intermediate light intensity distribution data 210 is acquired, the different first-type intermediate light intensity distribution data 210 may be plotted in the same graph.
Referring to fig. 7 and 8, in an embodiment of the present invention, when step S22 is performed, specifically, based on the initial flat portion light intensity distribution data 110 and the initial photoresist bump portion light intensity distribution data 120, different second type intermediate light intensity distribution data 310 can be obtained by inputting different light transmittance masks on software. The second type intermediate light intensity distribution data 310 may include second type intermediate photoresist protrusion portion light intensity distribution data 320 and second type intermediate flat portion light intensity distribution data 330. For example, in an environment where the width of the scattering bars is 30nm, the light transmittance (Transmission) of the mask can be set to 0%, 1%, 2%, 3%, 4%, 5%, 6% in sequence, and the light intensity difference between the background region and the SRAF region can be adjusted by changing the light transmittance of the mask, so that the light resistance consumption of the background region and the light resistance consumption of the SRAF region are basically consistent, and the problem of light resistance protrusion can be improved. By changing the light transmittance of the mask, the corresponding second type of intermediate light intensity distribution data 310 can be obtained. When the different second-type intermediate light intensity distribution data 310 is acquired, the different second-type intermediate light intensity distribution data 310 may be plotted in the same graph.
Referring to fig. 9, in one embodiment of the present invention, when step S30 is performed, specifically, step S30 may include the following steps:
step S31, acquiring a light intensity stability function based on the intermediate light intensity distribution data;
and S32, acquiring an optimal solution according to the light intensity stability function so as to obtain a target width and a target light transmittance corresponding to the optimal solution.
Referring to fig. 10, in one embodiment of the present invention, when step S31 is performed, specifically, step S31 may include the following steps:
step S311, obtaining the difference data bias between the light intensity distribution data of the convex portion of the middle photoresist and the light intensity distribution data of the flat portion, which is expressed as: bias= | mean (background) -mean (SRAF) |;
step S312, acquiring accumulated data 1sig of the light intensity distribution data of the convex part of the middle photoresist and the light intensity distribution data of the middle flat part;
step S313, based on the difference data and the accumulated data, obtains a light intensity stability function F (i), expressed as: f (i) =1sig/(1-bias).
In one embodiment of the present invention, after the intermediate light intensity distribution data is acquired, the difference data bias of the average value of the first type intermediate photoresist relief section light intensity distribution data 220 and the average value of the first type intermediate flat section light intensity distribution data 230 may be acquired based on the first type intermediate light intensity distribution data 210. The difference data bias of the average value of the second-type intermediate photoresist convex section light intensity distribution data 320 and the average value of the second-type intermediate flat section light intensity distribution data 330 is obtained based on the second-type intermediate light intensity distribution data 310. The difference data bias can be expressed as the difference in light intensity between the background region and the SRAF region, bias= mean (background) -mean (SRAF). Wherein mean (background) can be expressed as an average value of the first-type middle flat portion light intensity distribution data 230 or an average value of the second-type middle flat portion light intensity distribution data 330. mean (SRAF) may be expressed as an average value of the first type of intermediate photoresist relief section light intensity distribution data 220 or an average value of the second type of intermediate photoresist relief section light intensity distribution data 320. Mean (background) -mean (SRAF) | can be expressed as the absolute value of the difference between the two.
Meanwhile, the accumulated data 1sig of the first-type intermediate photoresist convex part light intensity distribution data 220 and the first-type intermediate flat part light intensity distribution data 230 may also be obtained based on the first-type intermediate light intensity distribution data 210. The accumulated data 1sig of the second-type intermediate photoresist convex part light intensity distribution data 320 and the second-type intermediate flat part light intensity distribution data 330 is obtained based on the second-type intermediate light intensity distribution data 310. The accumulated data 1sig may be expressed as the sum of standard deviations of the light intensities of the background region and the SRAF region, and may be used to measure the stability of the light intensities at the background region and the SRAF region.
Further, the corresponding difference data bias and the accumulated data 1sig may be obtained based on the first type of intermediate light intensity distribution data 210. For the first type of intermediate light intensity distribution data 210, a light intensity stability function F (i) may be obtained based on the difference data bias and the accumulated data 1sig, expressed as: f (i) =1sig/(1-bias). Of course, the corresponding difference data bias and the accumulated data 1sig may also be obtained based on the second type of intermediate light intensity distribution data 310. For the second type of intermediate light intensity distribution data 310, a light intensity stability function F (i) may be obtained based on the difference data bias and the accumulated data 1sig, expressed as: f (i) =1sig/(1-bias). That is, the light intensity stability function F (i) can be obtained based on the difference data bias and the accumulated data 1sig, expressed as: f (i) =1sig/(1-bias).
Referring to fig. 11, in one embodiment of the present invention, when step S32 is performed, specifically, step S32 may include the following steps:
step S321, acquiring a minimum value of a corresponding light intensity stability function based on first-class intermediate light intensity distribution data, representing the minimum value as an optimal solution, and acquiring a target width of a corresponding scattering bar according to the optimal solution;
step S322, based on the second type intermediate light intensity distribution data, obtaining the minimum value of the corresponding light intensity stability function, representing the minimum value as an optimal solution, and obtaining the target light transmittance of the corresponding photomask according to the optimal solution.
Referring to fig. 12 and 13, when step S321 is performed, the light intensity stability function F (i) can be obtained based on the difference data bias and the accumulated data 1sig of the first-type intermediate light intensity distribution data 210. For scattering bars of different widths, different first-class intermediate light intensity distribution data 210 can be obtained, and further, based on the different first-class intermediate light intensity distribution data 210, different function values of the light intensity stability function F (i) can be obtained. Different function values may be plotted in the same graph to obtain a minimum value of the light intensity stability function. The smaller the difference data bias and the accumulated data 1sig, the smaller the light intensity difference between the background area and the SRAF area, the closer the photoresist loss amount of the background area and the photoresist consumption amount of the SRAF area are, so that the problem that the photoresist bulge occurs in the SRAF area can be solved. That is, when the minimum function value is acquired, the minimum value may be represented as an optimal solution, and the target width of the corresponding scattering bar may be acquired according to the optimal solution. For example, for a scattering bar of 20nm, 22nm, 24nm, 26nm, 28nm, 30nm, 32nm width, the light intensity stability function F (i) of a scattering bar of 30nm width is minimal, where the target width of the scattering bar may be expressed as 30nm.
Referring to fig. 14 and 15, when step S322 is performed, the light intensity stability function F (i) may be obtained based on the difference data bias and the accumulated data 1sig of the second type of intermediate light intensity distribution data 310. For scattering bars of different widths, different second-class intermediate light intensity distribution data 310 can be obtained, and further, different function values of the light intensity stability function F (i) can be obtained based on the different second-class intermediate light intensity distribution data 310. Different function values may be plotted in the same graph to obtain a minimum value of the light intensity stability function. The smaller the difference data bias and the accumulated data 1sig, the smaller the light intensity difference between the background area and the SRAF area, the closer the photoresist loss amount of the background area and the photoresist consumption amount of the SRAF area are, so that the problem that the photoresist bulge occurs in the SRAF area can be solved. That is, when the minimum function value is obtained, the minimum value may be expressed as an optimal solution, and the light transmittance of the corresponding mask may be obtained according to the optimal solution. For example, for a mask having a transmittance of 0%, 1%, 2%, 3%, 4%, 5%, 6%, the light intensity stability function F (i) of the mask having a transmittance of 3% is smallest, and the target transmittance of the mask may be represented as 3%.
In one embodiment of the present invention, when step S40 is performed, specifically, when the target width and the target transmittance are obtained, the width of the scattering bar may be adjusted to the target width to complete the simulation process of the photolithography process, thereby improving the condition of the photoresist protrusion. Alternatively, the light transmittance of the photomask may be adjusted to a target light transmittance to complete the simulation process of the photolithography process, thereby improving the condition of the photoresist bump. Of course, the width of the scattering bar can be adjusted to be the target width, and the light transmittance of the photomask can be adjusted to be the target light transmittance at the same time, so that the simulation processing of the photoetching process is completed, and the condition of the photoresist bulge is improved. For example, the target width is 30nm and the target light transmittance is 3% will be described. When the width of the scattering bars is 24nm and the light transmittance of the photomask is 6%, obvious photoresist bulge problems can appear on the wafer corresponding to the SRAF area after the photoetching process. When the width of the scattering bars is 30nm and the light transmittance of the photomask is 6%, no photoresist bulge basically appears on the wafer corresponding to the SRAF area. When the width of the scattering bars is 24nm and the light transmittance of the photomask is 3%, the photoresist bulge is not generated on the wafer corresponding to the SRAF area.
In one embodiment of the invention, based on the correlation between the light transmittance and the scattering bar, when the intermediate intensity distribution data is obtained, the light intensity distribution on the surface of the photoresist is simulated by software by adopting different scattering bar widths and different light transmittance, so as to obtain a light intensity stability function F (i) under the corresponding environment, and then the three-dimensional relationship among the light intensity stability function F (i), the scattering bar widths and the light transmittance of the photomask is fitted, so that the scattering bar widths and the light transmittance of the photomask under the condition that the light intensity stability function F (i) is in a minimum value are obtained. Wherein the obtained scattering bar width and the light transmittance of the photomask are in an adjustable and conventional setting range.
Therefore, in the above scheme, by adjusting the width of the scattering bars and/or the light transmittance of the photomask, the unexpected effect is that the area of the wafer corresponding to the scattering bars is relatively close to the photoresist consumption of the area of the wafer back Jing Guangjiang intensity, so that the problem that the photoresist bulges on the surface of the wafer in the photoetching process is effectively solved, the stability of the photoetching process is improved, the stability of the etching process is ensured, and the yield is improved.
It should be understood that the sequence number of each step in the foregoing embodiment does not mean that the execution sequence of each process should be determined by the function and the internal logic, and should not limit the implementation process of the embodiment of the present invention.
Referring to fig. 16, the present invention further provides a simulation processing apparatus for a photolithography process, where the processing apparatus corresponds to the processing method in the above embodiment one by one. The processing device may include a data acquisition module 410, a data adjustment module 420, a data processing module 430, and a data simulation module 440. The functional modules are described in detail as follows:
the data acquisition module 410 may be configured to acquire initial light intensity distribution data, where the initial light intensity distribution data includes initial light intensity distribution data of a raised portion of the photoresist and initial light intensity distribution data of a flat portion.
The data adjustment module 420 may be configured to obtain corresponding intermediate light intensity distribution data by adjusting the width of the scattering bar and/or the light transmittance of the mask based on the initial light intensity distribution data, where the intermediate light intensity distribution data is divided into first type intermediate light intensity distribution data and second type intermediate light intensity distribution data. Specifically, the data adjustment module 420 may be configured to obtain the first type of intermediate light intensity distribution data by adjusting the width of the scattering bar based on the initial light intensity distribution data, where the first type of intermediate light intensity distribution data includes the first type of intermediate photoresist protrusion portion light intensity distribution data and the first type of intermediate flat portion light intensity distribution data. The data adjustment module 420 may be further configured to obtain second-type intermediate light intensity distribution data by adjusting the light transmittance of the mask based on the initial light intensity distribution data, where the second-type intermediate light intensity distribution data includes second-type intermediate photoresist bulge portion light intensity distribution data and second-type intermediate flat portion light intensity distribution data.
The data processing module 430 may be configured to obtain the corresponding target width and target transmittance based on the intermediate light intensity distribution data. The data processing module 430 may be configured to obtain a light intensity stability function based on the intermediate light intensity distribution data, and obtain an optimal solution according to the light intensity stability function, so as to obtain a target width and a target light transmittance corresponding to the optimal solution. Specifically, the data processing module 430 may be configured to obtain the difference data bias between the light intensity distribution data of the convex portion and the light intensity distribution data of the flat portion of the intermediate photoresist, which is expressed as: bias= mean (background) -mean (SRAF) |, the accumulated data 1sig of the light intensity distribution data of the middle photoresist convex part and the light intensity distribution data of the middle flat part are obtained, and the light intensity stability function F (i) is obtained based on the difference data and the accumulated data, expressed as: f (i) =1sig/(1-bias). The data processing module 430 may be further configured to obtain a minimum value of the corresponding light intensity stability function based on the first type of intermediate light intensity distribution data, and represent the minimum value as an optimal solution, obtain the target width of the corresponding scattering bar according to the optimal solution, obtain the minimum value of the corresponding light intensity stability function based on the second type of intermediate light intensity distribution data, and represent the minimum value as the optimal solution, and obtain the target light transmittance of the corresponding photomask according to the optimal solution.
The data simulation module 440 may be configured to adjust the width of the scattering bar in the photolithography process to a target width and/or adjust the light transmittance of the photomask to a target light transmittance, thereby completing the simulation process of the photolithography process to improve the condition of the photoresist protrusion.
The specific limitations of the treatment device can be found in the above description of the treatment method, and will not be repeated here. Each of the modules in the processing apparatus described above may be implemented in whole or in part by software, hardware, and combinations thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.
Referring to fig. 17, the present invention further provides a computer device, which may be a server. The computer device includes a processor, a memory, a network interface, and a database connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes non-volatile and/or volatile storage media and internal memory. The non-volatile storage medium stores an operating system, computer programs, and a database. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The network interface of the computer device is for communicating with an external client via a network connection. The computer program is executed by a processor to perform the functions or steps of a method for simulating a lithographic process.
Referring to fig. 18, the present invention also provides another computer device, which may be a client. The computer device includes a processor, a memory, a network interface, a display screen, and an input device connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The network interface of the computer device is for communicating with an external server via a network connection. The computer program is executed by a processor to perform the functions or steps of a method for simulating a lithographic process.
In one embodiment of the invention, a computer device is provided comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the following steps when executing the computer program:
acquiring initial light intensity distribution data, wherein the initial light intensity distribution data comprises initial light intensity distribution data of a convex part of the photoresist and initial light intensity distribution data of a flat part of the photoresist;
based on the initial light intensity distribution data, the corresponding intermediate light intensity distribution data are obtained by adjusting the width of the scattering bars and/or the light transmittance of the light cover, wherein the intermediate light intensity distribution data are divided into first-type intermediate light intensity distribution data and second-type intermediate light intensity distribution data;
acquiring a corresponding target width and target light transmittance based on the intermediate light intensity distribution data;
and adjusting the width of the scattering bars in the photoetching process to be the target width and/or adjusting the light transmittance of the photomask to be the target light transmittance, and completing the simulation treatment of the photoetching process so as to improve the condition of the photoresist bulge.
In one embodiment of the present invention, there is provided a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, performs the steps of:
acquiring initial light intensity distribution data, wherein the initial light intensity distribution data comprises initial light intensity distribution data of a convex part of the photoresist and initial light intensity distribution data of a flat part of the photoresist;
based on the initial light intensity distribution data, the corresponding intermediate light intensity distribution data are obtained by adjusting the width of the scattering bars and/or the light transmittance of the light cover, wherein the intermediate light intensity distribution data are divided into first-type intermediate light intensity distribution data and second-type intermediate light intensity distribution data;
acquiring a corresponding target width and target light transmittance based on the intermediate light intensity distribution data;
and adjusting the width of the scattering bars in the photoetching process to be the target width and/or adjusting the light transmittance of the photomask to be the target light transmittance, and completing the simulation treatment of the photoetching process so as to improve the condition of the photoresist bulge.
It should be noted that, the functions or steps that can be implemented by the computer readable storage medium or the computer device may correspond to those described in the foregoing method embodiments, and are not described herein for avoiding repetition.
Those skilled in the art will appreciate that implementing all or part of the above-described methods may be accomplished by way of a computer program, which may be stored on a non-transitory computer readable storage medium and which, when executed, may comprise the steps of the above-described embodiments of the methods. Any reference to memory, storage, database, or other medium used in the various embodiments provided herein may include non-volatile and/or volatile memory. The nonvolatile memory can include Read Only Memory (ROM), programmable ROM (PROM), electrically Programmable ROM (EPROM), electrically Erasable Programmable ROM (EEPROM), or flash memory. Volatile memory can include Random Access Memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms such as Static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double Data Rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous Link DRAM (SLDRAM), memory bus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), among others.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Thus, although the invention has been described herein with reference to particular embodiments thereof, a latitude of modification, various changes and substitutions are intended in the foregoing disclosures, and it will be appreciated that in some instances some features of the invention will be employed without a corresponding use of other features without departing from the scope and spirit of the invention as set forth. Therefore, many modifications may be made to adapt a particular situation or material to the essential scope and spirit of the present invention. It is intended that the invention not be limited to the particular terms used in following claims and/or to the particular embodiment disclosed as the best mode contemplated for carrying out this invention, but that the invention will include any and all embodiments and equivalents falling within the scope of the appended claims. Accordingly, the scope of the invention should be determined only by the following claims.
Claims (7)
1. A simulation processing method of a photolithography process, comprising:
acquiring initial light intensity distribution data, wherein the initial light intensity distribution data comprises initial light intensity distribution data of a convex part of the photoresist and initial light intensity distribution data of a flat part of the photoresist;
based on the initial light intensity distribution data, the corresponding intermediate light intensity distribution data are obtained by adjusting the width of the scattering bars and/or the light transmittance of the light cover, wherein the intermediate light intensity distribution data are divided into first-type intermediate light intensity distribution data and second-type intermediate light intensity distribution data;
acquiring difference value data of light intensity distribution data of a convex part of the middle light resistance and light intensity distribution data of a flat part of the middle light resistance;
acquiring accumulated data of light intensity distribution data of a convex part of the middle light resistance and light intensity distribution data of a flat part of the middle light resistance;
acquiring a light intensity stability function based on the difference data and the accumulated data;
based on the first type of intermediate light intensity distribution data, acquiring a minimum value of the corresponding light intensity stability function, representing the minimum value as an optimal solution, and acquiring a target width of a corresponding scattering bar according to the optimal solution;
based on the second-class intermediate light intensity distribution data, acquiring a minimum value of the corresponding light intensity stability function, representing the minimum value as an optimal solution, and acquiring the target light transmittance of the corresponding photomask according to the optimal solution;
and adjusting the width of the scattering bars in the photoetching process to be the target width and/or the light transmittance of the photomask to be the target light transmittance, and completing the simulation processing of the photoetching process so as to improve the condition of the photoresist bulge.
2. The method according to claim 1, wherein the step of obtaining the corresponding intermediate light intensity distribution data by adjusting the width of the scattering bars and/or the light transmittance of the mask based on the initial light intensity distribution data comprises:
based on the initial light intensity distribution data, obtaining first-type intermediate light intensity distribution data by adjusting the width of the scattering bar, wherein the first-type intermediate light intensity distribution data comprises first-type intermediate light resistance bulge light intensity distribution data and first-type intermediate flat light intensity distribution data;
and obtaining second-type intermediate light intensity distribution data by adjusting the light transmittance of the photomask based on the initial light intensity distribution data, wherein the second-type intermediate light intensity distribution data comprises second-type intermediate light resistance bulge light intensity distribution data and second-type intermediate flat light intensity distribution data.
3. A method of simulation of a lithographic process according to claim 1, wherein the difference data bias is expressed as: bias= | mean (background) -mean (SRAF) |, where,
mean (background) as an average value of the first-type intermediate flat portion light intensity distribution data or an average value of the second-type intermediate flat portion light intensity distribution data;
mean (SRAF) is expressed as an average value of light intensity distribution data of the first type of intermediate photoresist relief portion or an average value of light intensity distribution data of the second type of intermediate photoresist relief portion.
4. A method of simulating a lithographic process according to claim 3, wherein the light intensity stability function F (i) is expressed as: f (i) =1sig/(1-bias), where 1sig is represented as the sum of the standard deviation of the light intensity of the background region and the SRAF region, the background region is represented as a region on the mask surface except for the scattering bars and the main pattern portion, and the SRAF region is represented as a region on the mask surface where the scattering bars are partially.
5. A simulation processing apparatus for a photolithography process, comprising:
the data acquisition module is used for acquiring initial light intensity distribution data, wherein the initial light intensity distribution data comprise initial light intensity distribution data of a convex part of the photoresist and initial light intensity distribution data of a flat part of the photoresist;
the data adjustment module is used for obtaining corresponding intermediate light intensity distribution data by adjusting the width of the scattering bar and/or the light transmittance of the photomask based on the initial light intensity distribution data, wherein the intermediate light intensity distribution data is divided into first intermediate light intensity distribution data and second intermediate light intensity distribution data;
the data processing module is used for acquiring difference value data of light intensity distribution data of the middle light resistance convex part and light intensity distribution data of the middle flat part of the middle light intensity distribution data, acquiring accumulated data of the light intensity distribution data of the middle light resistance convex part and the light intensity distribution data of the middle flat part of the middle light intensity distribution data, acquiring a light intensity stability function based on the difference value data and the accumulated data, acquiring a minimum value of the corresponding light intensity stability function based on first-class middle light intensity distribution data, acquiring a target width of a corresponding scattering bar according to the optimal solution, acquiring a minimum value of the corresponding light intensity stability function based on second-class middle light intensity distribution data, and acquiring a target light transmittance of a corresponding photomask according to the optimal solution; and
and the data simulation module is used for adjusting the width of the scattering bar in the photoetching process to be the target width and/or adjusting the light transmittance of the photomask to be the target light transmittance, and completing the simulation processing of the photoetching process so as to improve the condition of the photoresist bulge.
6. Computer device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that the processor, when executing the computer program, realizes the steps of the simulation processing method of a lithographic process according to any of claims 1 to 4.
7. A computer readable storage medium storing a computer program, wherein the computer program when executed by a processor performs the steps of a method of simulating a lithographic process according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311433814.XA CN117148689B (en) | 2023-11-01 | 2023-11-01 | Simulation processing method, device, equipment and medium for photoetching process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311433814.XA CN117148689B (en) | 2023-11-01 | 2023-11-01 | Simulation processing method, device, equipment and medium for photoetching process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117148689A CN117148689A (en) | 2023-12-01 |
| CN117148689B true CN117148689B (en) | 2024-03-01 |
Family
ID=88908575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311433814.XA Active CN117148689B (en) | 2023-11-01 | 2023-11-01 | Simulation processing method, device, equipment and medium for photoetching process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117148689B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107290931A (en) * | 2016-03-30 | 2017-10-24 | 上海微电子装备（集团）股份有限公司 | It is a kind of to improve the method and Optical Coatings for Photolithography of photoresist packaging technology |
| CN108459461A (en) * | 2017-02-18 | 2018-08-28 | 力晶科技股份有限公司 | Photomask and method for manufacturing the same |
| CN110597023A (en) * | 2019-11-18 | 2019-12-20 | 墨研计算科学（南京）有限公司 | Photoetching process resolution enhancement method and device based on multi-objective optimization |
| CN111812940A (en) * | 2020-08-11 | 2020-10-23 | 上海华力微电子有限公司 | Method for optimizing exposure auxiliary graph in optical proximity effect correction |
| CN114326288A (en) * | 2021-12-29 | 2022-04-12 | 全芯智造技术有限公司 | Method for enlarging photoetching process window, electronic equipment and storage medium |
| CN114895521A (en) * | 2021-04-09 | 2022-08-12 | 台湾积体电路制造股份有限公司 | Patterning process and photomask |
| CN115598934A (en) * | 2022-10-18 | 2023-01-13 | 深圳晶源信息技术有限公司（Cn） | Photoetching model construction method, method for predicting SRAF graph exposure imaging and program product |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6670080B2 (en) * | 1998-07-21 | 2003-12-30 | Canon Kabushiki Kaisha | Mask pattern creating method and mask pattern creating apparatus |
-
2023
- 2023-11-01 CN CN202311433814.XA patent/CN117148689B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107290931A (en) * | 2016-03-30 | 2017-10-24 | 上海微电子装备（集团）股份有限公司 | It is a kind of to improve the method and Optical Coatings for Photolithography of photoresist packaging technology |
| CN108459461A (en) * | 2017-02-18 | 2018-08-28 | 力晶科技股份有限公司 | Photomask and method for manufacturing the same |
| CN110597023A (en) * | 2019-11-18 | 2019-12-20 | 墨研计算科学（南京）有限公司 | Photoetching process resolution enhancement method and device based on multi-objective optimization |
| CN111812940A (en) * | 2020-08-11 | 2020-10-23 | 上海华力微电子有限公司 | Method for optimizing exposure auxiliary graph in optical proximity effect correction |
| CN114895521A (en) * | 2021-04-09 | 2022-08-12 | 台湾积体电路制造股份有限公司 | Patterning process and photomask |
| CN114326288A (en) * | 2021-12-29 | 2022-04-12 | 全芯智造技术有限公司 | Method for enlarging photoetching process window, electronic equipment and storage medium |
| CN115598934A (en) * | 2022-10-18 | 2023-01-13 | 深圳晶源信息技术有限公司（Cn） | Photoetching model construction method, method for predicting SRAF graph exposure imaging and program product |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117148689A (en) | 2023-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7475383B2 (en) | Method of fabricating photo mask | |
| US8732625B2 (en) | Methods for performing model-based lithography guided layout design | |
| US7627837B2 (en) | Model-based pattern characterization to generate rules for rule-model-based hybrid optical proximity correction | |
| US9870443B2 (en) | Method and apparatus for integrated circuit mask patterning | |
| US8037429B2 (en) | Model-based SRAF insertion | |
| US20080301620A1 (en) | System and method for model-based sub-resolution assist feature generation | |
| DE60210852T2 (en) | Lighting optimization for specific mask patterns | |
| TWI621957B (en) | Sub-resolution assist feature implementation using shot optimization | |
| US6178360B1 (en) | Methods and apparatus for determining optimum exposure threshold for a given photolithographic model | |
| US11079672B2 (en) | Method and system for layout enhancement based on inter-cell correlation | |
| US11061318B2 (en) | Lithography model calibration | |
| KR100725170B1 (en) | System And Method For Fabricating Photomask | |
| US9779186B2 (en) | Methods for performing model-based lithography guided layout design | |
| CN114609857A (en) | Optical proximity effect correction method and system and mask | |
| US8498469B2 (en) | Full-field mask error enhancement function | |
| Palmer et al. | Dual-mask model-based proximity correction for high-performance 0.10-um CMOS process | |
| US7604912B2 (en) | Local flare correction | |
| CN117148689B (en) | Simulation processing method, device, equipment and medium for photoetching process | |
| US11281839B2 (en) | Method, apparatus and electronic device for photolithographic mask optimization of joint optimization of pattern and image | |
| US10386718B2 (en) | Method for modeling a photoresist profile | |
| KR101962492B1 (en) | Pattern generation method, program, information processing apparatus, and mask fabrication method | |
| US8793626B2 (en) | Computational lithography with feature upsizing | |
| CN115933305B (en) | Photomask pattern correction method, device, equipment and medium | |
| US7127699B2 (en) | Method for optimizing a number of kernels used in a sum of coherent sources for optical proximity correction in an optical microlithography process | |
| CN115877651A (en) | Mask plate layout correction method and system and mask plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |