CN117130225A - Method for coating photoresist and method for manufacturing semiconductor device - Google Patents

Method for coating photoresist and method for manufacturing semiconductor device Download PDF

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Publication number
CN117130225A
CN117130225A CN202210563177.7A CN202210563177A CN117130225A CN 117130225 A CN117130225 A CN 117130225A CN 202210563177 A CN202210563177 A CN 202210563177A CN 117130225 A CN117130225 A CN 117130225A
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China
Prior art keywords
photoresist
substrate
wafer
rotational speed
spraying
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Pending
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CN202210563177.7A
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Chinese (zh)
Inventor
刘涛
龚燕飞
邰立
罗波涛
吴俊�
王诗男
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Shanghai Industrial Utechnology Research Institute
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Shanghai Industrial Utechnology Research Institute
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Priority to CN202210563177.7A priority Critical patent/CN117130225A/en
Publication of CN117130225A publication Critical patent/CN117130225A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The application provides a method for coating photoresist and a method for manufacturing a semiconductor device, which comprises the following steps: spraying photoresist at a first position of the substrate rotated at a first rotational speed; spraying photoresist at a second position of the substrate, wherein the distance from the second position and the first position to the edge of the substrate in the radial direction of the substrate are different; and rotating the substrate at a second rotational speed for a predetermined time. By spraying the photoresist at different positions in the radial direction of the substrate, the uniformity of the photoresist can be improved.

Description

Method for coating photoresist and method for manufacturing semiconductor device
Technical Field
The present application relates to the field of semiconductor integrated circuit process manufacturing, and more particularly, to a photoresist coating method and a semiconductor device manufacturing method.
Background
Spin (Spin) coating is widely used in photolithography processes for semiconductor integrated circuit fabrication. Spin coating methods are generally classified into dynamic coating and static coating.
Dynamic gluing refers to: after the wafer is transmitted into a coating unit of the glue spreader, the photoresist nozzle sprays photoresist to the center position of the wafer in the high-speed rotation process of the wafer through the pre-wetting treatment of the solvent, and the photoresist is uniformly distributed on the wafer by utilizing the centrifugal force generated by the rotation of the wafer. Dynamic gluing refers to: after the wafer is transferred into a coating unit of the gumming machine, the wafer is generally not subjected to pre-wetting treatment of a solvent, and the photoresist nozzle ejects photoresist to the center position of the wafer under the low-speed rotation or static state, so that the rotating speed of the wafer is gradually increased, and the photoresist is covered on the surface of the wafer.
In general, dynamic photoresist is suitable for low viscosity photoresist, and static photoresist is suitable for high viscosity photoresist. Wherein the low viscosity photoresist has a viscosity of, for example, less than 100 centipoise (cp), and the high viscosity photoresist has a viscosity of, for example, greater than 100 cp.
Typically, dynamic glue application is less than 1% uniform and static glue application is less than 5% uniform.
It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section.
Disclosure of Invention
The inventors of the present application found that when photoresist is coated by a static coating process, centrifugal force of the center of the wafer is small, and thus photoresist in the center of the wafer is thick and thus uniformity of photoresist thickness is poor.
For example, fig. 1 is a schematic diagram of a photoresist thickness distribution on a wafer surface after static photoresist coating, as shown in fig. 1, positions 1 to 9 are a plurality of positions on a wafer diameter, position 5 corresponds to a center of the wafer, and positions 1 and 9 correspond to edges of the wafer. As shown in fig. 1, the photoresist thickness at the location 5 (i.e., the center of the wafer) is thicker, and thus, the uniformity of the photoresist thickness is worse.
The embodiment of the application provides a photoresist coating method and a semiconductor device manufacturing method, which can improve the uniformity of photoresist by spraying the photoresist at different positions in the radial direction of a substrate.
According to an aspect of an embodiment of the present application, there is provided a method of coating photoresist, the method including:
spraying photoresist at a first position of the substrate rotated at a first rotational speed;
spraying photoresist at a second position of the substrate, wherein the distance from the second position and the first position to the edge of the substrate in the radial direction of the substrate are different; and
the substrate is rotated at a second rotational speed for a first predetermined time.
According to another aspect of the embodiment of the present application, the distance from the first position to the edge of the substrate is 2/5 to 3/5 of the radius of the substrate.
According to another aspect of an embodiment of the present application, the distance from the first position to the edge of the substrate is 1/2 of the radius of the substrate.
According to another aspect of an embodiment of the present application, the second position is a center of the substrate.
According to another aspect of an embodiment of the application, the second rotational speed is higher than the first rotational speed.
According to another aspect of an embodiment of the application, wherein the first rotational speed is 40 to 60 revolutions per minute.
According to another aspect of an embodiment of the present application, the substrate is rotated by an angle of at least 720 degrees during the spraying of the photoresist to the first location.
According to another aspect of an embodiment of the application, wherein the photoresist has a viscosity of greater than 100 centipoise (cp).
According to another aspect of an embodiment of the present application, there is provided a manufacturing method of a semiconductor device, the manufacturing method including:
coating a photoresist on a substrate using the method of any of the above embodiments; and
the photoresist is exposed and developed.
The application has the beneficial effects that: by spraying the photoresist at different positions in the radial direction of the substrate, the uniformity of the photoresist can be improved.
Specific embodiments of the application are disclosed in detail below with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the application are not limited in scope thereby. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is evident that the drawings in the following description are only some embodiments of the present application and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art. In the drawings:
FIG. 1 is a schematic diagram of a photoresist thickness distribution on a wafer surface after static photoresist application;
FIG. 2 is a schematic diagram of a method of coating photoresist according to example 1 of the present application;
FIG. 3 is a schematic view of a substrate;
FIG. 4 is a schematic illustration of the photoresist sprayed to a first location;
fig. 5 is a schematic illustration of the photoresist sprayed to the second location.
Detailed Description
The foregoing and other features of the application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the specification and drawings, there have been specifically disclosed specific embodiments of the application that are indicative of some of the ways in which the principles of the application may be employed, it being understood that the application is not limited to the specific embodiments described, but, on the contrary, the application includes all modifications, variations and equivalents falling within the scope of the appended claims.
As described in detail in the embodiments of the present application, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.
In the context of the present application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
In the description of the embodiments of the present application, for convenience of description, a direction parallel to a substrate surface is referred to as a "lateral direction", and a direction perpendicular to the substrate surface is referred to as a "longitudinal direction", wherein "thickness" of each member refers to a dimension of the member in the "longitudinal direction"; the straight line direction passing through the center of the substrate is referred to as a "radial direction".
Example 1
Embodiment 1 of the present application provides a method of coating a photoresist.
Fig. 2 is a schematic diagram of a method for coating photoresist according to embodiment 1 of the present application, as shown in fig. 2, the method comprising:
an operation 21 of spraying photoresist at a first position of the substrate rotated at a first rotational speed;
an operation 22 of spraying photoresist at a second position of the substrate, the second position and the first position being different distances from the edge of the substrate in a radial direction of the substrate; and
operation 23 rotates the substrate at a second rotational speed for a predetermined time.
According to embodiment 1 of the present application, photoresist is sprayed at different positions in the radial direction of the substrate, so that the uniformity of the photoresist can be improved.
In this embodiment, the substrate may be a wafer commonly used in the field of semiconductor manufacturing, such as a silicon wafer, a silicon on insulator (SOI: silicon On Insulator) wafer, a silicon germanium wafer, a germanium wafer or gallium nitride wafer, a silicon carbide (SiC) wafer, or the like, or may be an insulating wafer such as quartz, sapphire, glass, or the like. In addition, various thin films required for semiconductor devices and/or microelectromechanical system (MEMS) devices, as well as various configurations, may be further provided on the surface of the substrate. The present embodiment is not limited thereto.
Fig. 3 is a schematic view of a substrate. As shown in fig. 3, the radius of the substrate 3 is R. In fig. 3, the substrate 3 is circular, and the substrate 3 may be other shapes, for example, polygonal.
In operation 21, the distance L1 from the first location D1 to the edge of the substrate 3 is 2/5 to 3/5 of the radius R of the substrate 3, e.g., L1 is 1/2 of the radius R of the substrate 3.
When the photoresist is sprayed to the first position, the substrate 3 may be in a state of being rotated (for example, with the geometric center of the substrate 3 as the rotation center), and the rotation speed of the substrate 3 may be the first rotation speed. The first rotational speed may be 40 revolutions per minute to 60 revolutions per minute, for example 50 revolutions per minute.
In spraying the photoresist to the first position D1, the substrate 3 is rotated for a predetermined time at the first rotation speed, thereby enabling the photoresist sprayed on the first position D1 to be spread. Wherein during the predetermined time the substrate 3 is rotated at least n weeks, n may be a value greater than zero, e.g. n=2, i.e. the substrate 3 is rotated at least 720 degrees during the predetermined time. Thereby, the photoresist is made to be sprayed on the entire circumference of the distance L1 to the edge of the substrate 3.
In operation 21, the amount of photoresist sprayed to the first location may be a fraction of the total amount of photoresist required on the substrate 3, such as around 1/2 of the total amount.
Fig. 4 is a schematic illustration of the photoresist sprayed to the first location. As shown in fig. 4, the photoresist 4 is sprayed on the entire circumference of the distance L1 to the edge of the substrate 3.
In operation 22 of the present application, the second position may be a position of the center O of the substrate 3, i.e., the second position is a distance from the edge of the substrate 3 equal to the radius R. Thereby, the second position is at a different distance from the edge of the substrate 3 in the radial direction than the first position.
In operation 22, the amount of photoresist sprayed to the second location may be another portion of the total amount of photoresist required on the substrate 3, such as around 1/2 of the total amount.
Fig. 5 is a schematic illustration of the photoresist sprayed to the second location. As shown in fig. 5, a photoresist 5 is sprayed at the center O of the substrate 3.
In operation 23, the substrate 3 is rotated at a second rotation speed for a first predetermined time. The second rotational speed may be higher than the first rotational speed described above.
In the above operations 21 to 23, by performing the spraying of the photoresist twice at different positions in the radial direction, the thickness uniformity of the photoresist can be improved.
The method of spraying photoresist of the present application can improve thickness uniformity of high viscosity photoresist, for example, the viscosity of high viscosity photoresist is greater than 100 centipoise (cp), such as PI photoresist or SU8 photoresist, etc. In particular, when the substrate is a large-sized wafer, there is a significant effect on the improvement of the thickness uniformity of the photoresist, thereby improving the process window. In addition, the method of spraying photoresist of the present application can also improve thickness uniformity of low viscosity photoresist, for example, the low viscosity photoresist has a viscosity of less than or equal to 100 centipoise (cp).
The method of coating photoresist of the present application is described below with a specific example. This example includes the steps of:
step 1, a photoresist nozzle is moved above a substrate, the distance from the edge of the substrate in the radial direction is 1/2 of the radius of the substrate, when the substrate (e.g. a wafer) keeps rotating at a low speed (e.g. 50 revolutions per minute), photoresist is sprayed on the surface of the substrate, and in the process of spraying the photoresist, the substrate rotates for more than two circles, so that one circle of the substrate is ensured to be coated with the photoresist;
step 2, the substrate keeps rotating at a low speed (for example, 50 revolutions per minute), the photoresist nozzle moves to be above the center of the substrate, and photoresist is sprayed to the center of the substrate;
and step 3, after the step 2 is completed, the rotating speed of the substrate is increased, and the photoresist on the surface of the substrate 3 is uniformly coated, so that the photoresist with better film thickness uniformity is obtained.
Example 2
Embodiment 2 of the present application provides a method of manufacturing a semiconductor device.
The manufacturing method of the semiconductor device comprises the following steps:
step 1, a method of coating photoresist of example 1 is adopted; and
and 2, exposing and developing the photoresist.
With embodiment 2 of the present application, since the thickness uniformity of the photoresist on the substrate is improved, the performance and reliability of the manufactured semiconductor device can be improved.
While the application has been described in connection with specific embodiments, it will be apparent to those skilled in the art that the description is intended to be illustrative and not limiting in scope. Various modifications and alterations of this application will occur to those skilled in the art in light of the spirit and principles of this application, and such modifications and alterations are also within the scope of this application.

Claims (9)

1. A method of coating a photoresist, the method comprising:
spraying photoresist at a first position of the substrate rotated at a first rotational speed;
spraying photoresist at a second position of the substrate, wherein the distance from the second position and the first position to the edge of the substrate in the radial direction of the substrate are different; and
the substrate is rotated at a second rotational speed for a first predetermined time.
2. The method of claim 1, wherein,
the distance from the first position to the edge of the substrate is 2/5 to 3/5 of the radius of the substrate.
3. The method of claim 2, wherein,
the distance from the first position to the edge of the substrate is 1/2 of the radius of the substrate.
4. The method of claim 1, wherein,
the second location is a center of the substrate.
5. The method of claim 1, wherein,
the second rotational speed is higher than the first rotational speed.
6. The method of claim 1, wherein,
the first rotational speed is 40 to 60 revolutions per minute.
7. The method of claim 1, wherein,
the substrate is rotated through an angle of at least 720 degrees during the spraying of the photoresist to the first location.
8. The method according to any one of claim 1 to 6,
the photoresist has a viscosity greater than 100 centipoise (cp).
9. A method of manufacturing a semiconductor device, the method comprising:
coating a photoresist on a substrate using the method of any one of claims 1 to 8; and
the photoresist is exposed and developed.
CN202210563177.7A 2022-05-18 2022-05-18 Method for coating photoresist and method for manufacturing semiconductor device Pending CN117130225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210563177.7A CN117130225A (en) 2022-05-18 2022-05-18 Method for coating photoresist and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210563177.7A CN117130225A (en) 2022-05-18 2022-05-18 Method for coating photoresist and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
CN117130225A true CN117130225A (en) 2023-11-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210563177.7A Pending CN117130225A (en) 2022-05-18 2022-05-18 Method for coating photoresist and method for manufacturing semiconductor device

Country Status (1)

Country Link
CN (1) CN117130225A (en)

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