CN117117506A - Electric control dual-band and polarization conversion dual-function intelligent super-surface - Google Patents
Electric control dual-band and polarization conversion dual-function intelligent super-surface Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/24—Polarising devices; Polarisation filters
- H01Q15/242—Polarisation converters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/10—Resonant antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/30—Arrangements for providing operation on different wavebands
- H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
- H01Q5/314—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
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- General Physics & Mathematics (AREA)
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Abstract
The application relates to a metamaterial and an electromagnetic functional device, discloses an electric control dual-band and polarization conversion dual-function intelligent super surface, and provides an array which is simple in structure, easy to process, small in loss, adjustable in dual-band phase shift and capable of realizing polarization conversion amplitude modulation. This intelligence super surface includes: a metal bottom plate, a dielectric substrate and a phase shift structure layer; the phase shift structure layer comprises a plurality of phase shift units arranged in an MXN quadrature array mode; the phase shift unit comprises a circular opening resonance ring and an HEMT transistor, and an opening in the 45-degree direction of the resonance ring divides the resonance ring into an upper semicircular ring and a lower semicircular ring; the HEMT transistor is embedded in an opening of the resonant ring, and two sides of the opening are respectively connected with a source electrode and a drain electrode of the HEMT transistor; the two semicircular rings are connected to the cathode bus through a cathode outgoing line, and the grid electrode of the HEMT transistor is connected to the column anode bus of the column through an anode outgoing line.
Description
Technical Field
The application relates to a metamaterial and an electromagnetic functional device, in particular to an intelligent super-surface technology.
Background
This section is intended to provide a background or context to the embodiments of the application that are recited in the claims. The description herein is not admitted to be prior art by inclusion in this section.
Terahertz (THz) waves are a new electromagnetic spectrum to be developed, generally referred to as electromagnetic waves with frequencies in the range of 0.1THz to 10 THz. The frequency range is positioned between millimeter waves and infrared light, and has a plurality of unique electromagnetic characteristics, so that the frequency range has extremely important potential utilization value in the fields of physics, chemistry, electronic information, imaging, life science, material science, astronomy, atmosphere and environment monitoring, national security and anti-terrorism, communication, radar and the like.
The super surface is one of research hotspots in the fields of physics and information, but once the traditional static super surface is prepared, the functions of the traditional static super surface are fixed, and electromagnetic waves cannot be regulated and controlled in real time according to different environmental requirements, so that different functions are realized. From the artificial micro-structure super-surface of the 90 th century of the 20 th year to the coding super-surface concept of 2010, and to the Cui Tiejun institution of 2014, an information coding super-surface is proposed, and the form of the super-surface has been developed from passive to active modes such as intelligent controllable, digital programmable and the like, which can be called as an intelligent reconfigurable surface (Reconfigurable Intelligent Surface, abbreviated as "RIS"). RIS is the evolution of Massive MIMO, it only reflects or refracts the incoming signal, does not need the radio frequency link, has avoided the problem of hardware complexity and power consumption, and can further promote the multi-antenna scale, obtain higher wave beam shaping gain. The dual-frequency RIS studied at home and abroad is generally of two types, namely a high-frequency structure and a low-frequency structure layering type of a metal layer-medium-metal layer and a high-frequency structure and a low-frequency structure layering type of a metal layer-medium-metal layer, and for a reflection array, although the bandwidth is limited, a specific technology can cover two widely separated frequencies. The dual-band structure is typically represented by combining two sets of different-sized structures of resonances at different frequency bands into one structure (Zhang, n., et al, "Programmable Coding Metasurface for Dual-Band Independent Real-Time Beam control," IEEE Journal on Emerging and Selected Topics in Circuits and Systems pp.99 (2020): 1-1). The double-layer double-frequency structure is characterized in that the high-frequency structure and the low-frequency structure are arranged left and right and up and down or are nested, the double-layer double-frequency structure is formed by distributing the high-frequency structure and the low-frequency structure on different metal layers, the low-frequency structure is arranged on the top layer, the high-frequency structure is arranged on the middle layer, and as long as the isolation degree of the two frequency bands is enough to achieve impedance matching, the resonance states of the two frequency bands are achieved on one unit structure. The above-mentioned structure operation frequency band is mostly in millimeter wave band, and is generally implemented based on ferrite material, positive-intrinsic-negative diode, field effect transistor, and other switch arrays. However, the problem with this solution is that ferrite materials are bulky, costly and not easy to integrate, while the problems of high losses of the semiconductor switch, high crosstalk between the high frequency structure and the low frequency structure, poor linearity, etc. prevent the application of dual-frequency RIS in the terahertz band.
Disclosure of Invention
The application aims to provide an electric control dual-band and polarization conversion dual-function intelligent super-surface, which can provide an array with a simple structure, easy processing, small loss, adjustable dual-band phase shift and polarization conversion amplitude modulation.
The application discloses an electric control dual-band and polarization conversion dual-function intelligent super-surface, which comprises the following components: a metal bottom plate (1), a dielectric substrate (2) and a phase shift structure layer (3) are arranged layer by layer from bottom to top;
the phase shift structure layer (3) comprises a plurality of phase shift units arranged in an MxN quadrature array; each phase shift unit comprises a circular split resonant ring (4) and a HEMT transistor; the opening of the resonance ring is arranged on the ring in a 45-degree clockwise rotation direction along the vertical direction, and the resonance ring is divided into an upper semicircular ring and a lower semicircular ring; the HEMT transistor is embedded in an opening of the resonant ring, and two sides of the opening are respectively connected with a source electrode and a drain electrode of the HEMT transistor, wherein M and N are integers larger than 2;
in the phase shift unit array, two semicircular rings of each phase shift unit are connected to a cathode bus (6) through a cathode lead-out wire (5), a grid electrode of a HEMT transistor of each phase shift unit is connected to a column anode bus (8) of a column through an anode lead-out wire (7), and each column of phase shift units is positioned between the cathode lead-out wire and the anode lead-out wire corresponding to the column;
the cathode buses (6) of each column are electrically connected together, and the anode buses (8) of each column are independent of each other.
In a preferred embodiment, the leading-out point of the cathode lead-out wire of the upper semicircle of the resonance ring is the position of the upper semicircle closest to the cathode bus, and the cathode lead-out wire is perpendicular to the cathode bus;
the cathode lead-out wire of the lower semicircular ring of the resonance ring is arranged at the lowest position in the vertical direction of the lower semicircular ring, the cathode lead-out wire of the lower semicircular ring comprises a vertical first part and a horizontal second part, the first end of the first part is connected with the lead-out point of the lower semicircular ring, the second end of the first part is connected with the first end of the second part, and the second end of the second part is connected with the cathode bus;
the anode lead-out wires (7) extend to the column anode bus (8) along the 45-degree direction of the opening of the resonant ring.
In a preferred embodiment, the HEMT transistor comprises a dipole metal strip embedded at the opening of the resonant ring and parallel to the opening direction, wherein the middle of the metal strip is provided with an opening, an ohmic patch is arranged on the upper surface of the dielectric substrate between two rectangular metal strips at the opening of the metal strip, and a doping hetero-wire is arranged above the ohmic patch, and the doping hetero-wire is parallel to and equidistant from the two rectangular metal strips; the two rectangular metal strips respectively form a source electrode and a drain electrode of the HEMT transistor, and the doped heterogeneous wire forms a grid electrode of the HEMT transistor.
In a preferred embodiment, the material of the doped hetero-wire is any one of the following materials: alGaN, gaN, inGaN, gaN, alGaAs, gaAs.
In a preferred embodiment, the material of the dielectric substrate (2) is any one of the following materials: sapphire, high-resistance silicon, inP, gaAs, and silicon carbide.
In a preferred embodiment, the metal base plate (1) and the phase shift structure layer (3) are made of a metal material with good conductors.
In a preferred embodiment, the metal material of the good conductor includes aluminum, silver, and gold.
In a preferred embodiment, the thickness of the dielectric substrate (2) is in the range of 100-600 μm;
the inner radius of the metal coupling ring (4) is in the range of 10-100 mu m, and the outer radius is in the range of 35-200 mu m;
the widths of the cathode outgoing line (5), the cathode bus (6), the anode outgoing line (7) and the column anode bus (8) are equal, and the range is 5-30 mu m;
the length range of the horizontal line and the vertical line which are directly connected with the ring by the cathode lead-out wire (5) is 5-50 mu m;
the distance between the cathode bus (6) and the column anode bus (8) is 80-550 mu m;
the thickness range of the metal coupling ring (4), the cathode outgoing line (5), the cathode bus (6), the anode outgoing line (7) and the column anode bus (8) is 100-500nm.
In a preferred embodiment, the inner radius is 28 μm and the outer radius is 90 μm;
the widths of the cathode outgoing line (5), the cathode bus (6), the anode outgoing line (7) and the column anode bus (8) are 5 mu m;
the lengths of a horizontal line and a vertical line which are directly connected with the ring of the cathode lead-out wire (5) are 5 mu m;
-the cathode bus (6) is spaced from the column anode bus (8) by 205 μm;
the thicknesses of the metal coupling ring (4), the cathode outgoing line (5), the cathode bus (6), the anode outgoing line (7) and the column anode bus (8) are 500nm.
In a preferred embodiment, the super surface is for terahertz frequency bands.
Aiming at the defect of single frequency band control in the prior art, the application provides a method for realizing unit phase modulation based on HEMT transistor-ultra-surface microstructure composite array polarization diversity, because the HEMT transistor is only suitable for the design of a high frequency band, the terahertz dual-polarization cannot be designed in a low frequency band. The arrangement mode of the transistors corresponds to terahertz waves in different polarization directions, so that the arrangement angle and the coupling structure of the phase shifting unit can be adjusted to show the phase shifting of two frequency bands in different polarization directions in one unit, and the controllable polarization conversion effect is realized. Polarization diversity is different from polarization and frequency multiplexing in that: polarization multiplexing is that multiple polarizations correspond to one resonant frequency, one frequency multiplexing is that the same frequency band adopts different polarizations, and the other frequency multiplexing is that the same frequency band is reused in different beams. The polarization diversity mode is to set the direction of the HEMT on the unit structure so that the phase of the terahertz wave in the X polarization direction can be controlled in the low frequency band, and the phase of the terahertz wave in the Y polarization direction can be controlled in the high frequency band, so that one diversity regulation and control on the polarization direction can be achieved.
According to the anisotropic phase modulation structure provided by the application, the HEMT transistor switch is obliquely arranged at 45 degrees, and meanwhile, the dual-function terahertz wave regulation and control of polarization diversity and polarization conversion are realized. The transistor switch placed obliquely has modulation effects on terahertz waves in two polarization directions, namely horizontal and vertical, under electric control, and the phase modulation effect on the two polarization directions is realized through one structure, so that the structural complexity is reduced. Meanwhile, the anisotropic unit phase shifting structure can realize cross polarization conversion of incident waves. Therefore, the application can realize the dual-function terahertz wave regulation and control of polarization diversity phase shift and cross polarization conversion. The polarization multiplexing structure has the advantages of realizing feeder multiplexing, simpler wiring and simpler overall process, and compared with the frequency multiplexing structure of the traditional electronic control diode, the frequency multiplexing structure of the traditional electronic control diode has higher control frequency section and more channels by using HEMT transistors, and is more flexible to control compared with the static frequency multiplexing structure without an external power supply. The dual-frequency RIS working mode is quasi-light, and meanwhile, beam scanning and beam forming of 1bit train control coding can be further realized in a 180-degree frequency band range of phase shifting, and the electronic gas characteristics and resonance modes of the composite super-surface micro-structure array are controlled by adopting an external electric control means to carry out phase coding regulation and control on terahertz waves, so that the dual-frequency RIS working mode is one of the research of the forefront of the international direction at present, and is a brand new way for realizing advanced scanning technology.
In the embodiment of the application, the equal-amplitude phase shift modulation is realized in the dual-band corresponding to the dual polarization through the anisotropic structure, and meanwhile, the cross polarization converted wave amplitude modulation can be realized on the incident wave in the vertical polarization incident wave phase shift modulation band, so that the structure parameters are less, and the optimization is simple. High-speed phase shift characteristics are realized by the HEMT transistor. The two-dimensional planar artificial microstructure is adopted, polarization diversity is realized by inserting a switch structure into the annular oblique direction, the single-layer array realizes the phase regulation and control of two frequency bands of terahertz waves in different polarization directions, and the two-dimensional planar artificial microstructure has the characteristics of more frequency band control than the common artificial microstructure, is simple in structure, can be realized by a micro-machining means, is mature in process and is easy to manufacture. The phase-locked loop works through electric control, so that dynamic broadband regulation and control of the phase are realized, other complicated excitation modes such as external light excitation, temperature excitation and the like are not needed, and the device has great advantages in the aspects of miniaturization, practicality and yield.
The technical features disclosed in the above summary, the technical features disclosed in the following embodiments and examples, and the technical features disclosed in the drawings may be freely combined with each other to constitute various novel technical solutions (which should be regarded as having been described in the present specification) unless such a combination of technical features is technically impossible. For example, in one example, feature a+b+c is disclosed, in another example, feature a+b+d+e is disclosed, and features C and D are equivalent technical means that perform the same function, technically only by alternative use, and may not be adopted simultaneously, feature E may be technically combined with feature C, and then the solution of a+b+c+d should not be considered as already described because of technical impossibility, and the solution of a+b+c+e should be considered as already described.
Drawings
FIG. 1 is a schematic diagram of the structure of a reconfigurable intelligent surface according to one embodiment of the application;
fig. 2 (a) and 2 (b) are schematic views of a phase shift unit structure according to an embodiment of the present application, wherein fig. 2 (a) is a hierarchical structure diagram, and fig. 2 (b) is a view from the top down in fig. 2 (a);
FIG. 3 is a graph of amplitude and phase shift of a cell structure in two polarization directions according to one embodiment of the application;
FIG. 4 is a graph of the electric field of current in the high frequency range of the Y polarization direction for a cell structure in an ideal ON state, according to one embodiment of the application;
FIG. 5 is a diagram of a current field of a cell structure in the low frequency range of the X polarization direction in an ideal ON state according to one embodiment of the present application;
fig. 6 (a) and 6 (b) are beam simulation scans of the wavefront modulation array according to an embodiment of the present application at high frequency ranges of 15 ° to 75 ° in the X-polarization low frequency range direction and the Y-polarization direction, respectively.
The relevant reference numerals are as follows:
1: metal bottom plate
2: dielectric substrate
3: phase shift structure layer
4: circular opening resonance ring
5: cathode lead-out wire
6: column cathode bus
7: anode lead-out wire
8: column anode bus
It should be noted that the upper, lower, left, right, horizontal, vertical, etc. orientations referred to herein are relative to the drawings, such as relative to the device positions in the drawings of fig. 1 and 2. These orientation terms are used only for clarity of description of the structure and do not represent that the device is so placed. Those skilled in the art will recognize that these devices may be rotated and flipped as desired in a particular installation environment and application scenario.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, it will be understood by those skilled in the art that the claimed application may be practiced without these specific details and with various changes and modifications from the embodiments that follow.
HEMTs (high electron mobility transistors) are field effect transistors that utilize two different energy band structures in a semiconductor material to achieve high electron mobility. The main advantage of such a transistor is that it can operate at very high frequencies.
According to the application, an artificial microstructure is combined with an HEMT transistor to form a terahertz electric control dual-band and polarization conversion dual-function intelligent super-surface phase shift array, a composite array reflecting surface capable of polarization diversity is formed through two-dimensional plane arrangement, and the resonance mode is changed by controlling the on-off of the HEMT transistor, so that the control of the phase of terahertz waves in a low frequency band in the Y polarization direction and a high frequency band in the X polarization direction is realized. Polarization diversity makes the coding amount, state number and channel number of the structure twice that of the common structure. The working mode is quasi-light, and beam scanning and beam forming of 1bit column control coding can be further realized in the 180-degree frequency band range of phase shift.
The application provides an artificial micro-structure reflection array with frequency response to terahertz electromagnetic waves on specific two frequency bands, wherein a micro-electronic processing technology is used for combining an array structure with an HEMT transistor, the on-off of the HEMT transistor is controlled through an externally applied voltage, and finally the phase of the terahertz waves is controlled through the resonance mode of an artificial micro-structure of which the structure is electrically controlled to be changed.
Setting a vertical negative metal feeder line for each column of unit antennas, wherein all the negative metal feeder lines in the array are connected with the same external negative electrode; a vertical anode lead-out wire (positive electrode feeder) is arranged for each column of unit antennas and is positioned on the right side of the unit, the anode lead-out wire is connected with all doped heterogeneous materials in the column, and positive electrodes are additionally arranged on each column of positive electrode feeder, so that single column independent control can be realized. The carrier concentration of the doped heterogeneous material between the openings of the resonant ring is controlled by the voltage difference between the external positive electrode and the external negative electrode, so that on-off regulation is realized, and the phase of the incident electromagnetic wave is regulated.
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.
Referring to fig. 1 and 2, in one embodiment, an electronically controlled dual band and polarization conversion dual function smart supersurface comprises:
the phase shift structure layer comprises phase shift units arranged in an MxN orthogonal array mode, each phase shift unit comprises an open resonance ring, the opening of the resonance ring rotates on the ring clockwise by 45 degrees along the vertical direction, and the resonance ring is divided into an upper semicircular ring and a lower semicircular ring; dipole metal strips parallel to the opening direction are embedded in the opening of the resonant ring, and the middle of each dipole metal strip is provided with an opening; an ohmic patch is arranged on the upper surface of the dielectric substrate between two rectangular metal strips at the opening of the metal strip, a doped hetero-wire is arranged above the ohmic patch, the doped hetero-wire is parallel to and equidistant from the two rectangular metal strips, and M, N is an integer greater than 2;
in the phase shift unit array, two semicircular rings are connected to a cathode bus on the left side of a phase shift unit through a cathode outgoing line; the doped heterogeneous wires of the phase shift units are connected to the column anode bus of the column through the anode outgoing lines, and each column of phase shift units is positioned between the cathode outgoing line and the anode outgoing line corresponding to the column;
each cathode outgoing line is connected with the same cathode bus, and the cathode bus is provided with an external cathode connecting end; the column anode buses are independent of each other.
In the above technical solution, the related structure (including dipole metal strip, ohmic patch, doped hetero-wire, etc.) embedded in the opening of the resonant ring forms a HEMT transistor. In addition to this structure, HEMT transistors can also be implemented in other ways as disclosed in the prior art.
The antenna elements are square, with a side length in the range of 100-600 μm, preferably 300 μm,
the thickness of the base dielectric substrate is in the range of 100-600 μm, preferably 300 μm,
the inner radius of the metal coupling ring is in the range of 10-100 μm, preferably 28 μm, the outer radius is in the range of 35-200 μm, preferably 90 μm,
the widths of the cathode lead, the cathode bus, the anode lead and the column anode bus are equal, the range is 5-30 μm, preferably 5 μm,
the length of the horizontal line and the vertical line, which are directly connected with the ring, of the cathode lead (5) ranges from 5 to 50 mu m, preferably 5 mu m,
the cathode bus and column anode bus spacing ranges from 80 to 550 μm, preferably 205 μm,
the thickness of the metal coupling ring, the cathode lead, the cathode bus, the anode lead and the column anode bus ranges from 100 nm to 500nm, and is preferably 500nm.
The substrate may be sapphire, high resistance silicon, inP, gaAs, or silicon carbide.
The metal materials used for the metal bottom plate and the phase shift structure layer are Au, ag, cu or Al.
The ohmic patch is made of Ti, al.Ni or Au.
The doped hetero-material may be AlGaN/GaN, inGaN/GaN or AlGaAs/GaAs.
The artificial microstructure polarization deflection reflection array is an M multiplied by N array formed by a plurality of units, wherein M is more than 2 and N is more than 2.
In one embodiment, the metal material used for the metal base plate and the phase shift structure layer is gold, and the semiconductor substrate material is silicon carbide.
The phase shift units are arranged in an m×n orthogonal array on the semiconductor substrate, and the unit structure parameters are the above-mentioned preferred.
As shown in fig. 2, anode lead wires and cathode lead wires are respectively arranged at the left and right sides of each row of units, the anode lead wires are connected with doped heterogeneous wires between all circular opening resonance ring openings of the row, and all anode lead wires are connected with different external positive electrodes, so that the carrier concentration of the doped heterogeneous materials between the circular opening resonance ring openings is controlled by the voltage difference between the external positive electrodes and the external negative electrodes, on-off switching is realized, and further phase regulation and control are performed on electromagnetic beams.
The embodiment realizes the phase regulation and control of the terahertz reflection electromagnetic wave by changing the on-off state of the transistor, and the on-off state of the terahertz reflection electromagnetic wave is controlled by the magnitude of the external voltage. The method comprises the following steps: when the voltage difference applied to the positive electrode line and the negative electrode line connected with the electrodes of the transistor in the structure is changed, the transistor will be in a cut-off or on state.
Simulation results show that the applied voltage changes the cut-off and conduction states of the transistor, and the phase regulation and control of the terahertz wave beam are realized. Fig. 3 (a) shows the amplitude state characteristics of y-polarization and x-polarization, and fig. 3 (c) and (d) show the phase shift unit in y-polarization direction, where ns=1×10 16 m -2 And ns=6×10 16 m -2 In both states, the dynamically adjustable array can achieve high efficiency modulation of phase. Ns=1×10 in fig. 3 16 m -2 Indicating that at a certain voltage, the transistor under artificial electromagnetic medium is in pinch-off state, ns=6×10 16 m -2 Indicating that the transistor is in an on state when no voltage is applied. The reflection phase of the visible unit structure is obviously changed along with the state of the crystal tube, and is in ns=1×10 when the y polarized wave of 0.25THz is incident and the x polarized wave of 0.21THz is incident 16 m -2 And ns=6×10 16 m -2 There is a 180 degree phase difference between the cells of (a). Fig. 3 (b) is a cross-polarization efficiency plot of the present application. When the incident wave is a y-polarized wave, the cross-polarized reflection amplitude is defined as rxy= |exr|/| Eyi |. Polarization Conversion Ratio (PCR)) Defined as pcr=r xy 2 /(R xy 2 +R yy 2 ). At the incidence of y polarized wave of 0.251THz, the on and off of the transistor can realize the change of PCR from 0.98 to 0.48, and realize the adjustable cross linear polarization conversion.
Fig. 4 is a graph of the amplitude of the on and off electric fields in the Y polarization direction of the phase shift unit, mainly by the phase shift of the resonant ring resonant mode switching control structure. Fig. 5 is an on-off field amplitude diagram of the X-polarization direction of the phase shift unit, mainly by the phase shift of the resonant ring resonant mode switching control structure. The designed anode lead-out wire and cathode lead-out wire have little influence on the electric field distribution of the structure during resonance switching, and the electric field distribution on the anode lead-out wire and the cathode lead-out wire is less in change when the transistor is switched on or switched off, so that extra resonance response to incident waves can not be generated to cause the resonance characteristic change of the ring. A resonant structure symmetrical about a 45 ° clockwise axis can achieve better cross-polarization transfer switching characteristics. Fig. 4 and 5 illustrate the phase shifting mechanism of the polarization diversity phase shifting structure, with the resonant ring exhibiting electric dipole resonance in the polarization direction when the transistor is on and electric quadrupole resonance in the polarization direction when the transistor is off. The electric quadrupole resonance when the transistor is disconnected can be decomposed into electric dipole resonance of two semicircular rings, and the electric dipole vector direction deviates from the co-polarization direction due to the anisotropy of the semicircular ring structure, so that cross polarization components are generated, and the polarization conversion effect is realized. Table 1 is a code sequence of beam scanning, and fig. 6 (a) and 6 (b) are beam simulation scan patterns of the wavefront control array in the X-polarization low-frequency band direction and the Y-polarization high-frequency band direction by 15 ° to 75 °, respectively.
Note that: n represents the number of adjacent in-phase cell intervals
TABLE 1
It is noted that in the present disclosure, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element. In the present application, if it is mentioned that a certain action is performed according to a certain element, it means that the action is performed at least according to the element, and two cases are included: the act is performed solely on the basis of the element and is performed on the basis of the element and other elements. Multiple, etc. expressions include 2, 2 times, 2, and 2 or more, 2 or more times, 2 or more.
This specification includes combinations of the various embodiments described herein. Separate references to embodiments (e.g., "one embodiment" or "some embodiments" or "preferred embodiments") do not necessarily refer to the same embodiment; however, unless indicated as mutually exclusive or as would be apparent to one of skill in the art, the embodiments are not mutually exclusive. It should be noted that the term "or" is used in this specification in a non-exclusive sense unless the context clearly indicates otherwise or requires otherwise.
All references mentioned in this disclosure are to be considered as being included in the disclosure of the application in its entirety so that modifications may be made as necessary. Further, it is understood that various changes and modifications of the application may be made by those skilled in the art after reading the disclosure of the application, and such equivalents are intended to fall within the scope of the application as claimed.
Claims (10)
1. An automatically controlled dual-frenquency band and polarization conversion difunctional intelligence super surface, its characterized in that includes: a metal bottom plate (1), a dielectric substrate (2) and a phase shift structure layer (3) are arranged layer by layer from bottom to top;
the phase shift structure layer (3) comprises a plurality of phase shift units arranged in an MxN quadrature array; each phase shift unit comprises a circular split resonant ring (4) and a HEMT transistor; the opening of the resonance ring is arranged on the ring in a 45-degree clockwise rotation direction along the vertical direction, and the resonance ring is divided into an upper semicircular ring and a lower semicircular ring; the HEMT transistor is embedded in an opening of the resonant ring, and two sides of the opening are respectively connected with a source electrode and a drain electrode of the HEMT transistor, wherein M and N are integers larger than 2;
in the phase shift unit array, two semicircular rings of each phase shift unit are connected to a cathode bus (6) through a cathode lead-out wire (5), a grid electrode of a HEMT transistor of each phase shift unit is connected to a column anode bus (8) of a column through an anode lead-out wire (7), and each column of phase shift units is positioned between the cathode lead-out wire and the anode lead-out wire corresponding to the column;
the cathode buses (6) of each column are electrically connected together, and the anode buses (8) of each column are independent of each other.
2. The electric control dual-band and polarization conversion dual-functional intelligent super-surface according to claim 1, wherein the leading-out point of the cathode lead-out wire of the upper semicircular ring of the resonant ring is the position of the upper semicircular ring closest to the cathode bus, and the cathode lead-out wire is perpendicular to the cathode bus;
the cathode lead-out wire of the lower semicircular ring of the resonance ring is arranged at the lowest position in the vertical direction of the lower semicircular ring, the cathode lead-out wire of the lower semicircular ring comprises a vertical first part and a horizontal second part, the first end of the first part is connected with the lead-out point of the lower semicircular ring, the second end of the first part is connected with the first end of the second part, and the second end of the second part is connected with the cathode bus;
the anode lead-out wires (7) extend to the column anode bus (8) along the 45-degree direction of the opening of the resonant ring.
3. The electric control dual-band and polarization conversion dual-function intelligent super-surface according to claim 1, wherein the HEMT transistor comprises a dipole metal strip which is embedded at the opening of the resonant ring and is parallel to the opening direction, the middle of the metal strip is opened, an ohmic patch is arranged on the upper surface of the dielectric substrate between two rectangular metal strips at the opening of the metal strip, and a doping hetero-wire is arranged above the ohmic patch, and the doping hetero-wire is parallel to and equidistant with the two rectangular metal strips; the two rectangular metal strips respectively form a source electrode and a drain electrode of the HEMT transistor, and the doped heterogeneous wire forms a grid electrode of the HEMT transistor.
4. The electrically controlled dual band and polarization conversion dual function intelligent subsurface of claim 3, wherein the material of the doped hetero-wire is any of the following materials: alGaN, gaN, inGaN, gaN, alGaAs, gaAs.
5. The electrically controlled dual-band and polarization conversion dual-functional intelligent super-surface according to claim 1, wherein the material of the dielectric substrate (2) is any one of the following materials: sapphire, high-resistance silicon, inP, gaAs, and silicon carbide.
6. The electrically controlled dual band and polarization conversion dual function intelligent supersurface of claim 1, wherein said metallic base plate (1) and said phase shift structural layer (3) are made of metallic materials of good conductor.
7. The electrically controlled dual-band and polarization conversion dual-functional intelligent super-surface of claim 6, wherein the metallic material of said good conductor comprises metallic aluminum, silver, gold.
8. The electrically controlled dual-band and polarization conversion dual-functional intelligent supersurface according to claim 1, wherein the thickness of said dielectric substrate (2) ranges from 100 μm to 600 μm;
the inner radius of the metal coupling ring (4) is in the range of 10-100 mu m, and the outer radius is in the range of 35-200 mu m;
the widths of the cathode outgoing line (5), the cathode bus (6), the anode outgoing line (7) and the column anode bus (8) are equal, and the range is 5-30 mu m;
the length range of the horizontal line and the vertical line which are directly connected with the ring by the cathode lead-out wire (5) is 5-50 mu m;
the distance between the cathode bus (6) and the column anode bus (8) is 80-550 mu m;
the thickness range of the metal coupling ring (4), the cathode outgoing line (5), the cathode bus (6), the anode outgoing line (7) and the column anode bus (8) is 100-500nm.
9. The electrically controlled dual band and polarization conversion dual function intelligent subsurface of claim 8, wherein the inner radius is 28 μm and the outer radius is 90 μm;
the widths of the cathode outgoing line (5), the cathode bus (6), the anode outgoing line (7) and the column anode bus (8) are 5 mu m;
the lengths of a horizontal line and a vertical line which are directly connected with the ring of the cathode lead-out wire (5) are 5 mu m;
-the cathode bus (6) is spaced from the column anode bus (8) by 205 μm;
the thicknesses of the metal coupling ring (4), the cathode outgoing line (5), the cathode bus (6), the anode outgoing line (7) and the column anode bus (8) are 500nm.
10. The electrically controlled dual band and polarization conversion dual function intelligent subsurface of any one of claims 1-9, wherein the subsurface is for terahertz frequency bands.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108711680A (en) * | 2018-04-08 | 2018-10-26 | 电子科技大学 | The controllable reflective polarization rotation device of terahertz wave band dynamic |
| CN111884593A (en) * | 2020-08-04 | 2020-11-03 | 重庆邮电大学 | Ring-shaped opening terahertz amplitude modulator based on HEMT and manufacturing method |
| CN116259980A (en) * | 2023-04-19 | 2023-06-13 | 电子科技大学长三角研究院(湖州) | Terahertz electric control composite resonance reconfigurable intelligent surface |
| CN116417803A (en) * | 2023-04-19 | 2023-07-11 | 电子科技大学长三角研究院(湖州) | Terahertz electric control diversity switching dual-band reconfigurable intelligent surface |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108711680A (en) * | 2018-04-08 | 2018-10-26 | 电子科技大学 | The controllable reflective polarization rotation device of terahertz wave band dynamic |
| CN111884593A (en) * | 2020-08-04 | 2020-11-03 | 重庆邮电大学 | Ring-shaped opening terahertz amplitude modulator based on HEMT and manufacturing method |
| CN116259980A (en) * | 2023-04-19 | 2023-06-13 | 电子科技大学长三角研究院(湖州) | Terahertz electric control composite resonance reconfigurable intelligent surface |
| CN116417803A (en) * | 2023-04-19 | 2023-07-11 | 电子科技大学长三角研究院(湖州) | Terahertz electric control diversity switching dual-band reconfigurable intelligent surface |
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