CN117117482B - Single-layer high-isolation dual-polarized antenna - Google Patents

Single-layer high-isolation dual-polarized antenna Download PDF

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Publication number
CN117117482B
CN117117482B CN202311212361.8A CN202311212361A CN117117482B CN 117117482 B CN117117482 B CN 117117482B CN 202311212361 A CN202311212361 A CN 202311212361A CN 117117482 B CN117117482 B CN 117117482B
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antenna
dielectric substrate
polarized
isolation
layer high
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CN117117482A (en
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张丹
郭涵涵
刘佳仔
丁振东
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Nanjing Forestry University
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Nanjing Forestry University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/08—Radiating ends of two-conductor microwave transmission lines, e.g. of coaxial lines, of microstrip lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/24—Polarising devices; Polarisation filters 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Abstract

The invention relates to a single-layer high-isolation dual-polarized antenna, which comprises: the device comprises a dielectric substrate, wherein a metal ground is arranged on one side of the dielectric substrate, a radiation patch is arranged on the other side of the dielectric substrate, a gap in a target shape is arranged at the central position of the radiation patch, through holes are formed in two sides of a feed port at the edge of the radiation patch, the through holes extend to the metal ground to form a defect ground structure, metal columns are arranged in the through holes, a feeder line is arranged above the metal columns, and the feeder line is connected with the radiation patch below the metal ground through the metal columns. After the continuous current band is introduced, the port isolation of the antenna is 7dB higher than that of the traditional dual-polarized patch antenna, so that the coupling effect between two ports is effectively reduced, and the port isolation of the antenna is improved.

Description

Single-layer high-isolation dual-polarized antenna
Technical Field
The invention relates to the technical field of antenna port isolation, in particular to a single-layer high-isolation dual-polarized antenna.
Background
Antennas are important in wireless transmission systems, and the nature of antennas is energy conversion devices, which can be broadly classified into broadcast antennas, radar antennas, base station antennas, and the like, depending on the application. At present, the fifth generation mobile communication technology is widely applied, from the initial first generation mobile communication technology (1G) with poor signals, only the basic use of few users can be met, the signals are strong and the network speed is high in the current 5G communication age, the requirements of a large number of users can be met at the same time, and the importance and the necessity of developing the mobile communication technology are fully illustrated. As a transceiver device for radio waves, a base station antenna is critical to the entire communication system, is a bridge between users, base stations, and networks, and realizes coverage of a mobile communication network. Therefore, improving the performance of the antenna is to improve the performance of the mobile communication system.
With the development of mobile communication technology, the requirements for base station antennas are gradually increased, especially dual-polarized antennas widely used in base station antennas, but the problems of narrow bandwidth, poor isolation between ports, low gain and the like of the traditional antenna structure are not solved effectively. Therefore, it is needed to provide a single-layer high-isolation dual-polarized antenna to solve the above problems.
Disclosure of Invention
The invention aims to provide a single-layer high-isolation dual-polarized antenna, which solves the problems in the prior art, and has the advantages that the port isolation of the antenna is 7dB higher than that of the traditional dual-polarized patch antenna after a continuous current band is introduced, so that the coupling effect between two ports is effectively reduced, and the port isolation of the antenna is improved.
In order to achieve the above object, the present invention provides the following solutions:
The utility model provides a single-layer high isolation dual polarized antenna, the dielectric substrate, one side of dielectric substrate is provided with the metal ground, the opposite side of dielectric substrate is provided with the radiation paster the central point of radiation paster puts the gap of target shape set up the feed port both sides at radiation paster edge set up the through-hole, the through-hole extends to the metal ground forms defective ground structure put the metal post in the through-hole, be provided with the feeder above the metal post, the feeder passes through the metal post with the radiation paster below the metal is connected.
Optionally, the dielectric substrate is made of an FR4 epoxy board.
Optionally, the dielectric substrate has a relative permittivity of 4.4.
Alternatively, the dielectric substrate has a loss tangent of 0.02.
Optionally, the thickness of the dielectric substrate is 1mm.
Optionally, the method for acquiring the width of the radiation patch comprises the following steps:
where c is the speed of light, fr is the resonant frequency of the antenna, ε r is the relative permittivity;
The length acquisition method of the radiation patch comprises the following steps:
Where λ e is the effective wavelength and ε e is the effective dielectric constant.
Optionally, the method for acquiring the effective dielectric constant of the radiation patch comprises the following steps:
Wherein epsilon e is the effective dielectric constant, epsilon r is the relative dielectric constant, w is the patch width, and h is the thickness of the dielectric substrate.
Optionally, the slit of the target shape is a cross-shaped slit.
To achieve the above object, the present invention provides a single-layer high-isolation dual polarized antenna, comprising: the dielectric substrate, one side of dielectric substrate is provided with the metal ground, target shape groove has been seted up to the center of metal ground the both ends in target shape groove adopt many microstrip lines to connect, the both sides of microstrip line set up coplanar waveguide feeder, will coplanar waveguide feeder extends to the metal ground bottom the coplanar waveguide feeder both sides are provided with the gap, and be provided with square paster on the top of coplanar waveguide feeder.
The beneficial effects of the invention are as follows:
On the basis of the theory of microstrip patch antenna design, the invention designs a single-layer high-isolation dual-polarized antenna, the port isolation of the antenna is-18 dB, a continuous current band structure consisting of a through hole, a defective ground and a metal column is introduced, the resonance frequencies of two polarized ports of the dual-polarized antenna which introduces the continuous current band are covered with 3.43-3.57 GHz, the bandwidth is 140MHz, the bandwidth is increased by 50MHz compared with the bandwidth of the traditional single-layer dual-polarized antenna, and the port isolation of the antenna in the resonance frequency is improved to-25 dB;
after the continuous current band is introduced, the port isolation of the antenna is 7dB higher than that of the traditional dual-polarized patch antenna, so that the coupling effect between two ports is effectively reduced, and the port isolation of the antenna is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a first schematic diagram of a single-layer high-isolation dual-polarized antenna according to an embodiment of the present invention; wherein fig. 1 (a) is a three-dimensional diagram of a single-layer high-isolation dual-polarized antenna, fig. 1 (b) is a front view of the single-layer high-isolation dual-polarized antenna, fig. 1 (c) is a schematic diagram of a radiation patch layer, and fig. 1 (d) is a schematic diagram of a defective ground structure;
fig. 2 is a first schematic diagram illustrating performance of a single-layer high-isolation dual-polarized antenna according to an embodiment of the present invention; wherein, fig. 2 (a) is an S parameter schematic diagram, and fig. 2 (b) is a gain pattern at 3.5 GHz;
fig. 3 is a first comparison chart of the current distribution on the surface of the radiating patch of the antenna according to the embodiment of the present invention; fig. 3 (a) is a current distribution diagram of a conventional dual-polarized patch antenna, and fig. 3 (b) is a current distribution diagram of a dual-polarized patch antenna with a continuous current band;
Fig. 4 is a schematic diagram of a transmission line model of a rectangular patch antenna according to an embodiment of the present invention; fig. 4 (a) is a schematic diagram of a transmission line model, and fig. 4 (b) is a schematic diagram of an equivalent circuit;
fig. 5 is a schematic diagram of electric field distribution of a rectangular patch antenna according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a coplanar waveguide feed structure in accordance with an embodiment of the present invention;
fig. 7 is a second schematic diagram of a single-layer high-isolation dual-polarized antenna according to an embodiment of the present invention; fig. 7 (a) is a three-dimensional diagram of a single-layer high-isolation dual-polarized antenna, fig. 7 (b) is a front view of the single-layer high-isolation dual-polarized antenna, fig. 7 (c) is a schematic diagram of a conventional patch layer, and fig. 7 (d) is a schematic diagram of a patch layer with an isolation strip;
fig. 8 is a second schematic diagram illustrating performance of a single-layer high-isolation dual-polarized antenna according to an embodiment of the present invention; wherein, fig. 8 (a) is an S parameter schematic diagram, and fig. 8 (b) is a gain pattern at 3.5 GHz;
Fig. 9 is a second comparative graph of the current distribution on the surface of a radiating patch of an antenna according to an embodiment of the present invention; fig. 9 (a) is a schematic diagram of a conventional dual polarized slot antenna, and fig. 9 (b) is a schematic diagram of a dual polarized slot antenna in which an isolation strip is inserted.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Compared with a multi-layer structure, the single-layer structure has the advantages of low section, easier processing, lower processing cost and the like, so that the defect of poor port isolation of the single-layer structure dual-polarized antenna is overcome.
The invention discloses a single-layer high-isolation dual-polarized antenna, which comprises: the dielectric substrate, the lower surface of dielectric substrate is provided with the metal ground, and the upper surface of dielectric substrate is provided with the radiation paster, sets up fixed shape's gap in the central point of radiation paster, sets up the through-hole in the feed port both sides at radiation paster edge to excavate the metal ground, forms the defected ground structure, puts the metal post in the through-hole, is provided with the feeder above the metal post, the feeder pass through the metal post with the radiation paster connection of metal below.
The single-layer high-isolation dual-polarized antenna is divided into three layers, namely an upper radiation patch, a middle base layer and a lower metal ground patch; the radiation patch and the metal ground are adhered on the upper and lower surfaces of the base layer. The feeder line is not connected with the radiation patch, and the radiation patch is connected with two rectangular patches on the same layer of the ground through a metal column. Two rectangular patches on the same layer as the ground are separated from the ground by a peripheral rectangular frame groove.
The dielectric substrate used for the antenna designed in this embodiment is an fr4_epoxy plate, the relative dielectric constant epsilon r =4.4, the loss tangent tan δ=0.02, and the resonance frequency is 3.5GHz. After the parameters are determined, the width w and the length l of the rectangular patch are calculated according to the following formulas by combining the working principle of the microstrip patch antenna:
Where c is the speed of light, fr is the resonant frequency of the antenna, ε r is the relative permittivity, ε e is the effective permittivity, and λ e is the guided wave wavelength in the medium.
From the above, it can be seen that the patch length l is related to the effective dielectric constant ε e and the resonance frequency fr. The patch width w is related to the resonant frequency fr, which can affect the impedance matching bandwidth and radiation efficiency of the antenna.
In general, a larger value of the width increases the radiation efficiency and bandwidth of the antenna, but cannot be larger than the value calculated by the equation (3-1), otherwise higher order modes are generated, resulting in distortion of the electromagnetic field.
The magnitude of the effective dielectric constant εe can be calculated by equation (3-3):
For an antenna with a resonant frequency of 3.5GHz wmax=26 mm can be calculated from equation (3-1) and εe=4.14 can be calculated from equation (3-3). Theoretically, the patch length should be half the microstrip line dielectric wavelength λm, however, considering the edge effect of the microstrip patch, the rectangular patch length l should be reduced somewhat, and therefore, l should be calculated by the following equation:
wherein Δl is the extension length:
Substituting the patch width wmax=26 mm and the effective dielectric constant epsilon e =4.14 into the formulas (3-4) and (3-5), the extension length Δl=0.15×103mm, and the length l=20.76 mm of the rectangular patch were calculated. Since the dual polarized antenna is designed in this embodiment, in order to maintain the consistency of the two polarized ports as much as possible, a square with symmetrical structure is selected as the shape of the radiating patch, and the length and width of the radiating patch are both 20mm.
The embodiment provides a single-layer high-isolation dual-polarized antenna, as shown in fig. 1 (a) -1 (d), unlike the conventional embedded feed, the antenna designed in this embodiment digs two through holes at positions corresponding to two feed ports at the edge of a patch on a dielectric substrate, digs a piece on the metal ground below to form a defective ground structure, connects the patch with the defective ground structure below through two metal posts placed in the through holes, and forms a continuous current band. In addition, a cross-shaped slot is cut in the middle of the radiating patch in order to extend the bandwidth.
The dielectric substrate was made of an fr4_epoxy plate material, and had a relative permittivity of er=4.4, a loss tangent tan δ=0.02, and a thickness h=1 mm. Table 1 shows the design parameters of the antenna.
TABLE 1
lp ls l1 w1 l2 w2 l3 w3
20 32.4 6 1.4 3.2 0.1 3 0.7
l4 w4 l5 w5 l6 w6 r H
2 0.5 2.5 0.7 3 1.2 0.3 1
The working principle of the microstrip patch antenna comprises:
In this embodiment, the working principle of the microstrip antenna is analyzed by taking a rectangular patch as an example. As shown in fig. 4 (a), the rectangular patch has a size of a×b, the dielectric substrate has a thickness of h, and h < λ, and the patch can be equivalently a microstrip transmission line with a width a and a length b. The patch length b is typically taken to be λm/2, where λm is the wavelength on the microstrip line. The radiation of the microstrip antenna is mainly formed by an a-side gap between the patch and the ground plate along the two ends. The two sides a are radiating sides, so the rectangular patch can be regarded as two gaps with a distance b and complex admittance of GS+ jBS, and the equivalent circuit is shown in fig. 4 (b).
According to the equivalent principle, the electric field radiation on the narrow slits can be equivalent to the radiation of the surface magnetic current. The electric field on the narrow slit between the patch and the grounding plate is:
Wherein, E 0 is the electric field amplitude, pi is the circumference ratio, y is the variable of the rectangular waveguide width, and b is the rectangular waveguide width;
Thus, the equivalent areal magnetic current density of the a-side gap at y=0 is:
The equivalent areal magnetic current density of the a-side gap at y=b is:
Wherein, Is the normal unit vector of the interface,/>Is the electric field intensity vector,/>Is the unit vector of the y-axis,/>For the unit vector of the x-axis, E 0 is the electric field at y=0,/>Is the unit vector of the z-axis.
As shown in fig. 5, the electric field distribution of a rectangular patch antenna is shown. The fields at the edges of the antenna are decomposed in horizontal and vertical directions, and since the vertical electric field components are inverted, they cancel each other out spatially, while the horizontal electric field components are in phase, so that only the horizontal electric field components remain. In addition, due to the presence of the ground plate, for the upper half-space it is equivalent to the introduction of magnetic currentAnd because h < lambda, corresponds to the ratio ofDoubling while the pattern is unchanged, while the lower half space is theoretically non-radiative.
As shown in fig. 2 (a) -2 (b), the bandwidth of the antenna proposed in this embodiment is 140MHz, which is increased by 50MHz compared with the bandwidth of the conventional dual-polarized patch antenna. After the continuous current band is introduced, the port isolation degree |S21| of the antenna is improved from-18 dB to-25 dB, which shows that the continuous current band can effectively reduce the interference between microstrip lines and reduce the coupling effect between two ports, thereby improving the port isolation degree.
Taking the excitation of the vertical polarized port as an example, the current distribution conditions on the radiation patch surfaces and the feeder lines of the conventional dual-polarized patch antenna and the dual-polarized patch antenna added with the continuous current band are analyzed.
Fig. 3 (a) shows a conventional dual polarized patch antenna, where in addition to the stronger current distribution on the excitation port and the feed line, there is also a stronger current distribution near the horizontal polarized port when the vertical polarized port is excited, which indicates that a portion of the electromagnetic energy excited by the vertical polarized port is coupled to the horizontal polarized port, thus resulting in poor port isolation of the conventional antenna.
Fig. 3 (b) shows a dual polarized patch antenna with continuous current bands added according to this embodiment, and it can be seen that when the vertical polarized ports are excited, most of the current is concentrated on the excitation ports and the feeder, and almost no current is distributed near the horizontal polarized ports, which indicates that the introduction of continuous current bands effectively suppresses the coupling between the two polarized ports, thereby improving the port isolation of the dual polarized patch antenna.
In the embodiment, on the basis of the theory of microstrip patch antenna design, a single-layer high-isolation dual-polarized antenna is designed, the port isolation |S21| of the antenna is-18 dB, and in order to improve the isolation, a continuous current band structure consisting of a through hole, a defective area and a metal column is introduced. Simulation results show that the resonance frequency of two polarized ports of the dual-polarized antenna introducing the continuous current band is covered with 3.43-3.57 GHz, the bandwidth is 140MHz, the bandwidth is increased by 50MHz compared with that of the traditional single-layer dual-polarized antenna, and the port isolation degree |S21| of the antenna in the resonance frequency is improved to-25 dB.
The invention discloses a single-layer high-isolation dual-polarized antenna, which comprises the following steps: the dielectric substrate, one side of the dielectric substrate is provided with a metal ground, the center of the metal ground is provided with a target-shaped groove, two ends of the target-shaped groove are connected by adopting a plurality of microstrip lines, two sides of the microstrip lines are provided with coplanar waveguide feeder lines, the coplanar waveguide feeder lines extend to the bottom end of the metal ground, two sides of the coplanar waveguide feeder lines are provided with gaps, and the top ends of the coplanar waveguide feeder lines are provided with square patches.
The microstrip slot antenna design theory is: the slot antenna is also called slot antenna, and is composed of microstrip line and slot on metal plate, and electromagnetic wave is radiated outwards by electric field excited in slot. The slot shape may be classified into a rectangular slot antenna, a tapered slot antenna, a loop slot antenna, and the like, according to the slot shape. The barbiting principle is originally a principle applied to optics, and is introduced into electromagnetism by Henry Booker to solve the problem of ideal conductive screens and complementary screens corresponding to ideal conductive screens, and in slot antennas, the use of the barbiting principle can simplify many problems.
The content of the babbitt principle is "the field at any point behind the barrier is the same as the total field after the addition of the field at the same location after the replacement with the complementary barrier, which is the ideal magnetic conductor plane, and the field at that point is the same in the complete absence of the barrier", which is extended and generalized by Booker in order to apply this principle to the theoretical analysis of electromagnetic fields, assuming that the barrier is an infinitely thin ideal conductive plane. Although ideal electric conductors and magnetic conductors do not exist in reality, materials having high conductivity such as copper, silver, and the like may be used. The operation principle of the slot antenna will be discussed below by taking an ideal slot antenna in an ideal space as an example. The electric field and the equivalent magnetic current surface density in the gap are respectively as follows:
wherein E x is the electric field in the gap, U ms is the antinode voltage, ω is the angular frequency, k 0 is ω/G, G is the total distance between the floors on both sides, l is 1/2 of the gap length, z is the direction, J ms is the equivalent magnetic current surface density, Is a vector in the direction.
The slit magnetic current is evenly distributed along the x direction, and the magnetic current is:
Ims＝2Umssin k0(l-|z|) (3-8)
Wherein I ms is magnetic current, and U ms is antinode voltage.
After feeding, electromagnetic energy excites the antenna through the slot edges, where surface currents are distributed across the slot. The barbites principle shows that the pattern of the ideal slot antenna is the same as the form of the dipoles which are coupled with the pattern, but the E plane and the H plane are exchanged, so that the electric field of the ideal slot antenna can be deduced from the radiation field of the dipoles. θ is defined as the angle between the vibrator axes, so:
Wherein E is an electric field, j is a complex number, I M is an antinode current, θ is a field point direction angle, k is a constant, l is a single arm length of the vibrator, r is a distance from the center of the vibrator to a field point, σ is a medium parameter, Is a field point direction angle vector.
In an ideal steady magnetic field, the line integral of the dipole magnetic induction B along any closed path is equal to the algebraic sum of all currents surrounded by the closed path and multiplied by magnetic permeability, and when the oscillator current is at an antinode, the tangential component of the magnetic field is H T, so that the oscillator current can be obtained:
IM＝2WHT (3-10)
wherein W is the gap width, and H T is the tangential component of the magnetic field.
Substituting formula (3-10) into formula (3-9) yields:
The method comprises the following steps:
Wherein E dt is the electric field component, U M is the antinode voltage, Z 0 is the input impedance, and H t is the magnetic field component.
The electric field of the available remote zone is:
Wherein, Is the angular component of the H-plane.
The magnetic field of the far zone is:
In the design of microstrip slot antenna, the most commonly used feed structure is coplanar waveguide (Coplanar Waveguide, abbreviated as CPW) feed, as shown in fig. 6, the structure is composed of a central conduction band, two metal plates at both sides and two band gaps in the middle, and the advantage is that the feed structure is located on the upper surface of the dielectric plate, so that it is easier to feed the radiation slot of the slot antenna. In addition, the coplanar waveguide is designed into a gradual change form, so that a wider impedance matching bandwidth can be realized, and the coplanar waveguide is a broadband and easily-integrated transmission line structure, but the wiring difficulty of the structure is large, so that the coplanar waveguide is not suitable for antenna array, and is used for feeding of a single antenna.
As shown in fig. 7 (a) -7 (b), the present invention proposes a single-layer high-isolation dual-polarized antenna in which the metal layer is composed of coplanar waveguide feed lines, square patches, metal grounds, and gaps therebetween. As can be seen from the figure, the coplanar waveguide feed structure is integrated with the square patch on the upper surface of the dielectric substrate. The rectangular slot is formed in the center of the metal floor, two parallel microstrip lines connected with the metal ground are adopted to separate the two square patches, and the purpose is to enable the two patches to radiate through gaps around the two patches respectively, so that the coupling effect between two polarized ports is reduced, and the port isolation of the antenna is improved.
The dielectric substrate was made of an fr4_epoxy plate material, and had a relative permittivity of er=4.4, a loss tangent tan δ=0.02, and a thickness h=1.6 mm. Fig. 7 (c) is a conventional dual polarized slot antenna before insertion of the isolation strip, and all the structural parameters and dimensions thereof are identical to those designated in fig. 7 (d), except for the isolation strip. And the structures and parameters of the horizontal polarized port and the vertical polarized port of the antenna are the same, namely the two polarized ports are symmetrical. Table 2 shows the design parameters of the antenna.
TABLE 2
ls lc lP l1 w1 l2 w2 w3 w4 H
50 30 45 13.75 2 9.3 3.2 1 2 1.6
Fig. 8 (a) and 8 (b) are S-parameters and gain patterns at 3.5GHz of the single layer high isolation dual polarized slot antenna. It can be seen that the resonant frequencies of the two polarized ports of the dual-polarized slot antenna provided by the embodiment cover 2.38-4.60 GHz, and the bandwidth is 2.22GHz, which is basically consistent with that of the traditional single-layer dual-polarized slot antenna. In the resonance frequency, the isolation degree |S21| between ports of the traditional dual-polarized slot antenna is about-10 dB, and the isolation degree |S21| between ports of the dual-polarized slot antenna added with the isolation belt provided by the embodiment is about-20 dB, so that the port isolation degree of the antenna is obviously improved. This shows that the introduction of the isolation strip can effectively reduce the interference between the two radiating patches of the dual-polarized slot antenna, and reduce the coupling between the two polarized ports, thereby improving the isolation of the ports.
Fig. 9 shows current distribution of the antenna at the 3.5GHz center frequency point, and when the vertical polarized port is excited, the current distribution of the conventional slot antenna and the slot antenna patch surface inserted into the isolation band and the feed line are analyzed respectively.
Fig. 9 (a) shows a conventional dual polarized slot antenna, which can be seen that when the vertical polarized port is excited, in addition to the strong current distribution on the excitation port and the feed line, there is also a strong current distribution near the horizontal polarized port, which indicates that a part of electromagnetic energy excited by the vertical polarized port is coupled to the horizontal polarized port, so that the port isolation of the conventional antenna is poor.
Fig. 9 (b) shows a dual polarized slot antenna with an isolation strip interposed therebetween according to this embodiment, in which most of the current is concentrated on the excitation port and the feeder line when the vertical polarized port is excited, and almost no current is distributed near the horizontal polarized port, which means that the coupling between the two polarized ports is effectively suppressed after the isolation strip is interposed, thereby improving the port isolation of the antenna.
According to the design theory of the microstrip slot antenna, the dual-polarized microstrip slot antenna with the isolation zone is designed by combining a coplanar waveguide feed structure. Simulation results show that after the isolation belt is inserted, the coupling effect between the two ports is effectively reduced, the port isolation degree |S21| of the antenna is reduced from-10 dB to about-20 dB, the resonance frequencies of the two polarized ports of the dual-polarized slot antenna are covered with 2.38-4.60 GHz, and the bandwidth is 2.22GHz.
The above embodiments are merely illustrative of the preferred embodiments of the present invention, and the scope of the present invention is not limited thereto, but various modifications and improvements made by those skilled in the art to which the present invention pertains are made without departing from the spirit of the present invention, and all modifications and improvements fall within the scope of the present invention as defined in the appended claims.

Claims (8)

1. A single-layer high-isolation dual-polarized antenna, comprising: a dielectric substrate, wherein a metal ground is arranged on one side of the dielectric substrate, a radiation patch is arranged on the other side of the dielectric substrate, a gap with a target shape is arranged at the central position of the radiation patch, through holes are formed on two sides of a feed port at the edge of the radiation patch, the through holes extend to the metal ground to form a defected ground structure, a metal column is arranged in the through holes, a feeder line is arranged above the metal column, and the feeder line is connected with the radiation patch below the metal ground through the metal column;
the method for acquiring the width of the radiation patch comprises the following steps:
where c is the speed of light, fr is the resonant frequency of the antenna, ε r is the relative permittivity;
The length acquisition method of the radiation patch comprises the following steps:
Where λ e is the effective wavelength and ε e is the effective dielectric constant.
2. The single-layer high-isolation dual-polarized antenna of claim 1, wherein the dielectric substrate is an FR4 epoxy board.
3. The single-layer high-isolation dual-polarized antenna of claim 1, wherein the dielectric substrate has a relative permittivity of 4.4.
4. The single layer high isolation dual polarized antenna of claim 1, wherein the dielectric substrate has a loss tangent of 0.02.
5. The single-layer high-isolation dual-polarized antenna of claim 1, wherein the dielectric substrate has a thickness of 1mm.
6. The single-layer high-isolation dual-polarized antenna of claim 1, wherein the effective dielectric constant acquisition method of the radiation patch is as follows:
Wherein epsilon e is the effective dielectric constant, epsilon r is the relative dielectric constant, w is the patch width, and h is the thickness of the dielectric substrate.
7. The single-layer high-isolation dual-polarized antenna of claim 1, wherein the target-shaped slot is a cross-shaped slot.
8. A single-layer high-isolation dual-polarized antenna, comprising: a dielectric substrate, wherein a metal ground is arranged on one side of the dielectric substrate, a target-shaped groove is formed in the center of the metal ground, two ends of the target-shaped groove are connected by a plurality of microstrip lines, coplanar waveguide feeder lines are arranged on two sides of the microstrip lines, the coplanar waveguide feeder lines extend to the bottom end of the metal ground, gaps are formed on two sides of the coplanar waveguide feeder lines, and square patches are arranged on the top ends of the coplanar waveguide feeder lines;
the method for acquiring the width of the radiation patch comprises the following steps:
Where c is the speed of light, fr is the resonant frequency of the antenna, ε e is the relative permittivity;
The length acquisition method of the radiation patch comprises the following steps:
Where λ e is the effective wavelength and ε e is the effective dielectric constant.
CN202311212361.8A 2023-09-19 2023-09-19 Single-layer high-isolation dual-polarized antenna Active CN117117482B (en)

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Publication number Priority date Publication date Assignee Title
CN106816705A (en) * 2017-01-17 2017-06-09 厦门大学 A kind of UWB mimo antennas with double trap structures
CN109860996A (en) * 2019-03-01 2019-06-07 华南理工大学 A kind of low section dual polarization filtering magnetoelectricity dipole antenna
CN114614248A (en) * 2022-03-28 2022-06-10 重庆邮电大学 Broadband dual-polarization crossed dipole antenna loaded with high-impedance surface
CN115149243A (en) * 2022-05-26 2022-10-04 深圳大学 Dual-frequency dual-polarization laminated patch antenna and wireless communication equipment
CN116111357A (en) * 2023-02-28 2023-05-12 华南理工大学 Millimeter wave application-oriented single-layer broadband dual-polarized patch antenna and equipment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106816705A (en) * 2017-01-17 2017-06-09 厦门大学 A kind of UWB mimo antennas with double trap structures
CN109860996A (en) * 2019-03-01 2019-06-07 华南理工大学 A kind of low section dual polarization filtering magnetoelectricity dipole antenna
CN114614248A (en) * 2022-03-28 2022-06-10 重庆邮电大学 Broadband dual-polarization crossed dipole antenna loaded with high-impedance surface
CN115149243A (en) * 2022-05-26 2022-10-04 深圳大学 Dual-frequency dual-polarization laminated patch antenna and wireless communication equipment
CN116111357A (en) * 2023-02-28 2023-05-12 华南理工大学 Millimeter wave application-oriented single-layer broadband dual-polarized patch antenna and equipment

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