CN117114024B - SOC chip capable of reducing unnecessary NFC recognition times - Google Patents
SOC chip capable of reducing unnecessary NFC recognition times Download PDFInfo
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- CN117114024B CN117114024B CN202311386515.5A CN202311386515A CN117114024B CN 117114024 B CN117114024 B CN 117114024B CN 202311386515 A CN202311386515 A CN 202311386515A CN 117114024 B CN117114024 B CN 117114024B
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- 238000012216 screening Methods 0.000 claims abstract description 56
- 230000006854 communication Effects 0.000 claims abstract description 12
- 238000004891 communication Methods 0.000 claims abstract description 10
- 230000002708 enhancing effect Effects 0.000 claims abstract description 3
- 230000036961 partial effect Effects 0.000 claims abstract description 3
- 239000004020 conductor Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 8
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 229910000859 α-Fe Inorganic materials 0.000 claims description 5
- 238000013461 design Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003313 weakening effect Effects 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002618 waking effect Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
- G06K7/10—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
- G06K7/10009—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves
- G06K7/10019—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves resolving collision on the communication channels between simultaneously or concurrently interrogated record carriers.
- G06K7/10108—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves resolving collision on the communication channels between simultaneously or concurrently interrogated record carriers. interrogating only those RFIDs that fulfill a predetermined requirement, e.g. selecting all RFIDs having the same speed and moving in a cloud like fashion, e.g. on the same train; interrogating only RFIDs having a certain predetermined temperature, e.g. in the same fridge, another possibility being the active ignoring of a group of tags that fulfill a predetermined requirement, equivalent to the Boolean NOT operation
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/02—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the selection of materials, e.g. to avoid wear during transport through the machine
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
- G06K7/10—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
- G06K7/10009—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves
- G06K7/10297—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves arrangements for handling protocols designed for non-contact record carriers such as RFIDs NFCs, e.g. ISO/IEC 14443 and 18092
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Theoretical Computer Science (AREA)
- Electromagnetism (AREA)
- General Health & Medical Sciences (AREA)
- Artificial Intelligence (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Computer Networks & Wireless Communication (AREA)
- Computer Security & Cryptography (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention relates to the technical field of SOC chips, in particular to an SOC chip capable of reducing unnecessary NFC recognition times. The embodiment of the invention provides an SOC chip for reducing unnecessary NFC recognition times, which comprises the following components: the chip body is used for converting the received radio frequency signals into feedback signals so as to complete near field communication; the screening structure is arranged at one side of the chip main body for receiving signals and transmitting signals, and is used for enabling partial radio frequency signals passing through the screening structure to generate total reflection; a shielding structure is arranged between the chip main body and the screening structure and is used for shielding radio frequency signals with signal strength lower than a preset value; a signal amplifier is arranged between the chip main body and the shielding structure, and the signal amplifier is used for enhancing signals transmitted to the chip main body through the shielding structure. The embodiment of the invention provides an SOC chip capable of reducing unnecessary NFC recognition times.
Description
Technical Field
The invention relates to the technical field of SOC chips, in particular to an SOC chip capable of reducing unnecessary NFC recognition times.
Background
Currently, NFC (Near Field Communication) near field communication technology is widely applied to intelligent terminals. The NFC technology is realized through an SOC chip on the intelligent terminal.
When the radio frequency signals transmitted by the external equipment reach a certain intensity, the near field communication process of the SOC chip is aroused. However, when the user does not need to perform near field communication, the terminal is not directly aligned to the external device, and when some radio frequency signals directly sent or reflected by the external device are incident on the SOC chip, the approach communication process of the chip may be evoked, so that the energy consumption of the terminal is increased.
Therefore, in order to address the above-described drawbacks, there is an urgent need for an SOC chip that reduces the number of unnecessary NFC recognition times.
Disclosure of Invention
The embodiment of the invention provides an SOC chip capable of reducing unnecessary NFC recognition times.
The embodiment of the invention provides an SOC chip for reducing unnecessary NFC recognition times, which comprises the following components:
the chip body is used for converting the received radio frequency signals into feedback signals so as to complete near field communication;
the screening structure is arranged on one side of the chip main body for receiving signals and transmitting signals, and is used for enabling radio frequency signals which partially pass through the screening structure to be totally reflected;
a shielding structure is arranged between the chip main body and the screening structure and is used for shielding radio frequency signals with signal intensity lower than a preset value;
a signal booster is disposed between the chip body and the shielding structure for enhancing signals transmitted through the shielding structure to the chip body.
In one possible design, the screening structure is layered, and the refractive index of the material from which the screening structure is made is smaller than the refractive index of air.
In one possible design, the screening structure is spherical and the refractive index of the material from which the screening structure is made is greater than the refractive index of air.
In one possible design, the shielding structure is made of a material that includes a conductive material.
In one possible design, the shielding structure comprises a metal plate.
In one possible design, the shielding structure comprises a shielding layer and a regulating layer in sequence along the thickness direction, wherein the shielding layer is a metal plate, and the regulating layer is a layered ferrite.
In one possible design, the shielding structure includes an insulating base layer and an impedance layer along a thickness direction, the impedance layer includes a plurality of annular units which are arranged on the base layer and are not contacted with each other, the annular units include a conductor part and a semiconductor part, two ends of the conductor part are connected through the semiconductor part, the shielding structure includes a front surface and a back surface, when the shielding structure is seen to the front surface, the semiconductor part on the annular unit is a passage along a clockwise direction and is an open circuit along a anticlockwise direction, and the front surface is one surface of the shielding structure facing the chip main body.
In one possible design, from the front side to the back side, the shielding structure comprises a base layer and an impedance layer in that order.
In one possible design, the ring-shaped unit is a square ring, the diameter of the conductor is 0.01-0.02 mm, and the side length of the ring-shaped unit is 0.35-0.4 mm.
Compared with the prior art, the invention has at least the following beneficial effects:
in this embodiment, the screening structure is capable of totally reflecting some of the rf signals incident thereon, thereby screening the rf signals. Only radio frequency signals incident on the central location of the screening structure or radio frequency signals incident on the screening structure at small angles of incidence can pass through the screening structure. It should be noted that the screening structure does not reduce the intensity of the radio frequency signal, but only screens the position or the incidence angle of the radio frequency signal on the screening layer. In summary, only the radio frequency signal approaching to the vertical screening structure or the radio frequency signal incident to the center of the screening structure can be identified, so that the radio frequency signals generated by other non-target devices or the radio frequency signals reflected by other directions are prevented from waking up the NFC identification process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a structure of an SOC chip according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another SOC chip according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a shielding structure according to an embodiment of the present invention;
FIG. 4 is a schematic view of another shielding structure according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of an annular unit according to an embodiment of the present invention.
In the figure:
1-a chip body;
2-screening of the structure;
3-shielding structure;
31-a shielding layer;
32-a regulating layer;
33-an impedance layer;
331-a cyclic unit;
331 a-a conductor portion;
331 b-a semiconductor portion;
34-a substrate layer;
4-signal booster.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments, and all other embodiments obtained by those skilled in the art without making any inventive effort based on the embodiments of the present invention are within the scope of protection of the present invention.
In the description of embodiments of the present invention, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying any relative importance unless explicitly specified or limited otherwise; the term "plurality" means two or more, unless specified or indicated otherwise; the terms "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, integrally connected, or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present specification, it should be understood that the terms "upper", "lower", and the like used in the embodiments of the present invention are described in terms of the angles shown in the drawings, and should not be construed as limiting the embodiments of the present invention. In the context of this document, it will also be understood that when an element is referred to as being "on" or "under" another element, it can be directly on the other element or be indirectly on the other element through intervening elements.
The embodiment of the invention provides an SOC chip for reducing unnecessary NFC recognition times, which comprises the following components:
the chip main body 1 is used for converting a received radio frequency signal into a feedback signal to complete near field communication;
the screening structure 2 is arranged on one side of the chip main body 1 for receiving signals and transmitting signals, and the screening structure 2 is used for enabling partial radio frequency signals passing through the screening structure 2 to generate total reflection;
a shielding structure 3 is arranged between the chip main body 1 and the screening structure 2, and the shielding structure 3 is used for shielding radio frequency signals with signal intensity lower than a preset value;
a signal booster 4 is provided between the chip body 1 and the shielding structure 3, the signal booster 4 being used to boost the signal transmitted through the shielding structure 3 to the chip body 1.
In this embodiment, the screening arrangement 2 is capable of totally reflecting some of the rf signals incident thereon, thereby screening the rf signals. Only radio frequency signals incident on the central position of the screening arrangement 2 or radio frequency signals incident on the screening arrangement 2 with a small angle of incidence can pass through the screening arrangement 2. It should be noted that, the screening structure 2 does not reduce the intensity of the rf signal, but only screens the position or the incidence angle of the rf signal on the screening layer. In summary, only the radio frequency signal approaching the vertical screening structure 2 or the radio frequency signal incident to the center of the screening structure 2 can be identified, so that the radio frequency signals generated by other non-target devices or the radio frequency signals reflected by other directions are prevented from waking up the NFC identification process.
The radio frequency signals passing through the screening structure 2 are incident to the screening structure 3, the screening structure 3 can screen the radio frequency signals with the signal intensity lower than a preset value, the radio frequency signals with the signal intensity higher than the preset value enter the signal amplifier 4 after being weakened, and the radio frequency signals enter the chip main body 1 after being reinforced by the signal amplifier 4. In this way, the radio frequency signal with the radio frequency signal lower than the preset value cannot pass through the shielding structure 3, and therefore cannot wake up the NFC recognition function of the chip main body 1. Only radio frequency signals having an intensity higher than a preset value can pass through the shielding structure 3, but their signal intensity is reduced. The reduced signal strength may result in that the rf signal passing through the shielding structure 3 may not reach the receiving sensitivity of the rf signal received by the chip body 1, and in order to facilitate the extraction of information in the rf signal, the signal booster 4 is required to enhance the signal strength.
In summary, the radio frequency signal below the preset value is directly shielded by the shielding structure 3. Therefore, only radio frequency signals of sufficiently high intensity can pass through the shielding structure 3, i.e. it is possible to wake up the near field communication function of the chip body 1 only if the chip body 1 and the external device emitting the radio frequency signals are sufficiently close together. Thus, function awakening caused by the fact that the chip main body 1 is close to an external device for transmitting radio frequency signals when near field communication is not needed is avoided.
It will be appreciated that the power of the signal booster 4 may be flexibly adjusted according to the shielding effect of the shielding structure 3, and that the signal booster 4 may not be provided if the shielding effect is required to be low.
Referring to fig. 1, in some embodiments of the present invention, the screening structure 2 is layered, and the refractive index of the material of which the screening structure 2 is made is smaller than that of air.
In this embodiment, when the screening structure 2 is layered and the refractive index of the material of which the screening structure 2 is made is lower than that of air, the radio frequency signal having an incident angle greater than the critical angle is totally reflected. The critical angle may be adjusted by adjusting the refractive index difference between the screening structure 2 and air.
Referring to fig. 2, in some embodiments of the present invention, the screening structure 2 is spherical, and the refractive index of the material of which the screening structure 2 is made is greater than that of air.
In this embodiment, when the screening structure 2 is spherical and the refractive index of the material of which the screening structure 2 is made is greater than that of air, the rf signal incident on the edge of the screening structure 2 is totally reflected, and only the rf signal incident on the center of the screening structure 2 can pass through. It should be noted that the range of the total edge reflection can be adjusted by adjusting the refractive index difference between the screening structure 2 and air.
In some embodiments of the invention, the shielding structure 3 is made of a material comprising an electrically conductive material.
In this embodiment, the conductive material has an inductance and a resistance, so that the radio frequency signal incident thereon can be attenuated, thereby achieving the effect of shielding the radio frequency signal. In addition, the radio frequency signal incident on the conductive material is partially reflected, so as to partially shield the radio frequency signal.
In some embodiments of the invention, the shielding structure 3 comprises a metal plate.
In the present embodiment, the metal plate has an advantage of simple structure and low cost as the shielding structure 3.
As shown in fig. 3, in some embodiments of the present invention, the shielding structure 3 includes a shielding layer 31 and an adjustment layer 32 in this order in the thickness direction, the shielding layer 31 is a metal plate, and the adjustment layer 32 is a layered ferrite.
In this embodiment, the shielding layer 31 is a monolithic metal plate, which can cause electromagnetic induction between the shielding layer 31 and other metal materials in the terminal, and thus eddy currents can be formed, resulting in heating of the terminal. In order to avoid the eddy current effect of the shielding layer 31, a regulating layer 32 made of ferrite is provided on one side of the shielding layer 31, which ferrite is capable of weakening the radio frequency signal on the one hand and suppressing the eddy current on the other hand.
It should be noted that, in order to prevent the chip body 1 from failing to receive the radio frequency signal due to the excessively strong weakening ability of the shielding layer 31 and the adjustment layer 32, it is necessary to control the thicknesses of the shielding layer 31 and the adjustment layer 32 to be in a thin range. The planar dimensions of the adjustment layer 32 are preferably the same as the dimensions of the shielding layer 31.
As shown in fig. 4 and 5, in some embodiments of the present invention, the shielding structure 3 includes an insulating base layer 34 and an impedance layer 33 along a thickness direction, the impedance layer 33 includes a plurality of ring-shaped units 331 disposed on the base layer 34 and not contacting each other, the ring-shaped units 331 include a conductor portion 331a and a semiconductor portion 331b, both ends of the conductor portion 331a are connected by the semiconductor portion 331b, the shielding structure 3 includes a front surface and a back surface, the semiconductor portion 331b on the ring-shaped units 331 is a via in a clockwise direction and an open circuit in a counterclockwise direction when looking toward the front surface, and the front surface is a surface of the shielding structure 3 facing the chip body 1.
In this embodiment, the impedance layer 33 of the shielding structure 3 is a plurality of ring units 331 that are not in contact with each other, when the radio frequency signal is incident on the ring units 331, the current on the ring units 331 can flow through the semiconductor portion 331b, and the plurality of ring units 331 form a loss array, so as to further achieve the effect of weakening the radio frequency signal. Since the propagation direction of the feedback signal is opposite to that of the rf signal, when the feedback signal is incident on the loop unit 331, the semiconductor portion 331b makes the loop unit 331 unable to form a path, and thus it is difficult to form a loss array.
In summary, when the reflection of the signal is not considered, the radio frequency signal is weakened when passing through the shielding structure 3, and when the feedback signal passes through the shielding structure 3, the weakening effect is not obvious. Therefore, the feedback signal can still maintain high intensity after passing through the shielding structure 3, so as to complete near field communication with external equipment.
In some embodiments of the invention, the shielding structure 3 comprises, from front to back, a base layer 34 and an impedance layer 33 in that order.
In this embodiment, the base layer 34 is made of an insulating material, for example, polyimide. The dielectric constant of the insulating material is relatively close to that of air, so that the feedback signal is incident on the substrate layer 34 with fewer reflected portions. The strength of the feedback signal passing out of the shielding structure 3 can be further ensured.
It should be noted that, in order to further increase the strength of the feedback signal, the signal booster 4 may also be used to match the scheme in the above embodiment.
In some embodiments of the present invention, the annular unit 331 is a square ring, the diameter of the conductor is 0.01-0.02 mm, and the side length of the annular unit 331 is 0.35-0.4 mm.
In the present embodiment, by limiting the above parameters, the plurality of annular units 331 can be made to form a loss array for the frequency of the radio frequency signal.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (9)
1. An SOC chip for reducing the number of unnecessary NFC recognitions, comprising:
the chip main body (1) is used for converting a received radio frequency signal into a feedback signal so as to complete near field communication;
the screening structure (2) is arranged on one side of the chip main body (1) for receiving signals and transmitting signals, and the screening structure (2) is used for enabling partial radio frequency signals passing through the screening structure (2) to be subjected to total reflection;
a shielding structure (3) is arranged between the chip main body (1) and the screening structure (2), and the shielding structure (3) is used for shielding radio frequency signals with signal intensity lower than a preset value;
a signal booster (4) is arranged between the chip main body (1) and the shielding structure (3), and the signal booster (4) is used for enhancing signals transmitted to the chip main body (1) through the shielding structure (3).
2. The SOC chip of claim 1, wherein the screening structure (2) is layered, and the refractive index of the material of which the screening structure (2) is made is smaller than the refractive index of air.
3. The SOC chip of claim 1, wherein the screening structure (2) is spherical, and the refractive index of the material of which the screening structure (2) is made is greater than the refractive index of air.
4. SOC chip according to claim 1, characterized in that the preparation material of the shielding structure (3) comprises an electrically conductive material.
5. SOC chip according to claim 4, characterized in that the shielding structure (3) comprises a metal plate.
6. The SOC chip of claim 5, wherein the shielding structure (3) includes a shielding layer (31) and a regulating layer (32) in order in a thickness direction, the shielding layer (31) is a metal plate, and the regulating layer (32) is a layered ferrite.
7. The SOC chip of claim 4 wherein the shielding structure (3) includes an insulating base layer (34) and an impedance layer (33) in a thickness direction, the impedance layer (33) includes a plurality of ring-shaped units (331) disposed on the base layer (34) and not in contact with each other, the ring-shaped units (331) include a conductor portion (331 a) and a semiconductor portion (331 b), both ends of the conductor portion (331 a) are connected by the semiconductor portion (331 b), the shielding structure (3) includes a front surface and a back surface, the semiconductor portion (331 b) on the ring-shaped units (331) is a via in a clockwise direction and an open circuit in a counterclockwise direction when looking at the front surface, and the front surface is a surface of the shielding structure (3) facing the chip main body (1).
8. The SOC chip of claim 7, wherein the shielding structure (3) comprises, from the front side to the back side, a base layer (34) and an impedance layer (33) in that order.
9. The SOC chip of claim 8, wherein the annular unit (331) is a square ring, the conductor portion has a diameter of 0.01 to 0.02mm, and a side length of the annular unit (331) is 0.35 to 0.4mm.
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CN111224688A (en) * | 2019-12-30 | 2020-06-02 | 中国电子科技集团公司第十三研究所 | Radio frequency front end chip structure |
CN212572572U (en) * | 2020-07-31 | 2021-02-19 | 河北交投智能交通技术有限责任公司 | RSU signal strength detection device |
CN217444388U (en) * | 2022-05-25 | 2022-09-16 | 杭州芯迈半导体技术有限公司 | Semiconductor packaging structure with electromagnetic shielding layer |
CN115577725A (en) * | 2022-10-26 | 2023-01-06 | 深圳市国芯物联科技有限公司 | Baseband signal processing SOC chip of multi-protocol UHF RFID reader-writer |
CN116823120A (en) * | 2023-07-21 | 2023-09-29 | 尚戎信息技术(深圳)有限公司 | Cargo warehouse-in and warehouse-out detection method, device, equipment and storage medium |
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