CN117107203A - MiniLED coating method - Google Patents

MiniLED coating method Download PDF

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Publication number
CN117107203A
CN117107203A CN202311052787.1A CN202311052787A CN117107203A CN 117107203 A CN117107203 A CN 117107203A CN 202311052787 A CN202311052787 A CN 202311052787A CN 117107203 A CN117107203 A CN 117107203A
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CN
China
Prior art keywords
substrate
film
miniled
coating
coating method
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Pending
Application number
CN202311052787.1A
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Chinese (zh)
Inventor
朱照生
王胜
郑建军
齐彦杰
王超
钟素文
余志辉
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Wuhu Token Sciences Co Ltd
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Wuhu Token Sciences Co Ltd
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Priority to CN202311052787.1A priority Critical patent/CN117107203A/en
Publication of CN117107203A publication Critical patent/CN117107203A/en
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • C23C14/021Cleaning or etching treatments
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641Nitrides
    • C23C14/0652Silicon nitride
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process

Abstract

The invention discloses a MiniLED coating method, which comprises the following steps: 1) Priming SiNx coating; 2) MOCUMO coating; the step 1) includes: a. preparing a raw material substrate; b. cleaning a substrate; c, siNx coating; the step 2) includes: a. cleaning a substrate; MOCUMO plating; c. physical and chemical property evaluation; d. the method for adjusting the stress of the film and the film plated on the surface of the substrate prepared by the method are used for improving the stress state of the film.

Description

MiniLED coating method
Technical Field
The invention belongs to the technical field of MiniLED processing, and particularly relates to a MiniLED film coating method.
Background
In carrying out the invention, the inventors have found that the prior art has at least the following problems:
the magnetron sputtering technology is widely applied to metal surface coating treatment. In the magnetron sputtering process, columnar crystals are usually formed during the growth of the film, the columnar crystals compete with each other to grow, and the release of residual stress of the film is very unfavorable, so that in the physical vapor deposition technology (including multi-arc ion degree and magnetron sputtering), the situation that the film stress is too large, the bonding force of a film base is reduced, and even the film falls off and fails is caused.
CN115959837A-Mini LED coated glass and a preparation method and application thereof, and discloses Mini LED coated glass and a preparation method and application thereof. The Mini LED coated glass comprises a glass substrate, a first metal film layer, a second metal film layer and a conductive layer which are sequentially laminated; the material of the first metal film layer comprises metal molybdenum, the material of the second metal film layer comprises tin-lead alloy, and the material of the conductive layer comprises metal copper, so that the technical problems cannot be solved.
Disclosure of Invention
The invention aims to solve the technical problem of providing a MiniLED film coating method, a method for adjusting film stress and a film coated on the surface of a substrate prepared by the method so as to improve the stress state of the film.
In order to solve the technical problems, the invention adopts the following technical scheme: a MiniLED coating method comprises the following steps:
1) Priming SiNx coating; 2) MoCuMo coating;
the step 1) includes: a. preparing a raw material substrate; b. cleaning a substrate; c, siNx coating;
the step 2) includes: a. cleaning a substrate; moCuMo coating; c. physical and chemical property evaluation; d. and (5) mass production of products.
In the step a of the step 1), a predetermined substrate is selected, wherein the substrate size and the substrate type are selected, and the substrate type comprises a strong substrate or a non-strong substrate.
In the step b of the step 1), the KOH liquid with the volume ratio of 5% is added into a cleaning machine, an upper brush and a lower brush are pressed in, an AP machine is started, and organic matters and dirt on the surface of a substrate are treated.
In the step c of the step 1), first part evaluation is firstly carried out, the temperature of the substrate is selected to be 230 ℃, 1KW is calculated to be 23A according to the SiNx sputtering rate, 26KW is started according to the film thickness requirement of 600A, film coating is started on a substrate frame on a product to be plated, and mass production is started after all physicochemical projects, film thickness and adhesive force are qualified.
In the step a of the step 2), KOH liquid with the volume ratio of 3% is added into a cleaning machine, an upper brush and a lower brush are pressed in normally, an AP machine is started, and a substrate plated with SiNx process is cleaned.
In the step b of the step 2), firstly, the performance of the film forming machine needs to be confirmed, 7 heating cavities are respectively 3# room and 9# room, and when MoCuMo is plated: heating the 3# chamber and the 4# chamber, setting the temperature of the substrate to 150 ℃, and closing the 5# 9# heating; when the temperature is reduced to about 40 ℃ of the chamber, starting to debug the first piece, introducing 375sccm into a Cu target Ar, setting the transmission speed to 0.6m/min, and according to the film thickness requirement F-MO of each layer: 300 + -100A; CU:15000±800A; S-MO: calculating the sputtering rate of the target material of 300+/-100A, wherein the F-MO power is 3.5KW, and CU:93KW, S-MO:3.5KW, the first part is evaluated, the film thickness and the physical and chemical properties of the finished product are evaluated, high-temperature adhesive tapes are adhered to the plain glass substrate at equal intervals, and film coating is started after film loading.
In the step c of the step 2), the film thickness of the film coated product, namely the MoCuMo film thickness, is measured by a film thickness machine for the film coated product, and the finished product sample is required to confirm the appearance, the film surface and non-film surface optical property, the resistance and the adhesive force, and the mass production is started after the physicochemical properties are all qualified.
And d) in the step 2), the products are produced in batches, the apparent film color of the coated products is subjected to spot check and sheet resistance measurement and monitoring in the production process, and finally all the products are packaged and put in storage for subsequent processing.
In the step b of the step 2), the pressure of the cavity gas is regulated, the background vacuum degree of a normal vacuum cavity is 5.0x10 < -3 > Pa, when Ar-300sccm gas is introduced to boost the pressure to 0.4 Pa-0.6 Pa, a substrate is filled into the vacuum cavity, ar gas is introduced to apply negative bias to the substrate, magnetron sputtering is adopted to bombard the surface of the substrate, cu target positions are regulated through external stress, 375sccm gas is respectively introduced, and the pressure of the gas is increased to 0.5-0.7 Pa.
In step b of the above step 2), F-MO is not purged with oxygen.
One of the above technical solutions has the following advantages or beneficial effects, a method for adjusting the stress of a film and a film plated on the surface of a substrate prepared by the method, so as to improve the stress state of the film.
Drawings
FIG. 1 is a schematic diagram of a MiniLED coating method according to an embodiment of the present invention;
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, a MiniLED coating method includes the steps of:
and (3) a priming SiNx coating process:
a. preparing a raw material substrate: selecting proper base plate according to the requirement of customer, such as base plate size, base plate type (strong or weak);
b. cleaning a substrate: adding KOH liquid medicine with the volume ratio of 5% into a cleaning machine, pressing an upper brush and a lower brush normally, and starting an AP machine normally to clean organic matters and dirt on the surface of a substrate;
SiNx coating: firstly, first piece evaluation is required, the temperature of a substrate is selected to be 230 ℃, about 23A of 1KW is calculated according to the SiNx sputtering rate, 26KW is started according to the film thickness requirement of 600A, film plating is started on a substrate frame to be plated, and batch production is started after all physicochemical projects (film thickness and adhesive force) are OK;
MOCUMO coating process:
a. cleaning a substrate: adding KOH liquid medicine with the volume ratio of 3% into a cleaning machine, pressing an upper hairbrush and a lower hairbrush normally, starting an AP machine normally, and cleaning the appearance of the substrate plated with the SiNx process;
MOCUMO coating: firstly, confirming the performance of film forming equipment, (transmission, air extraction, heating and the like), wherein 7 heating cavities are respectively 3# room and 9# room, when MOCUMO is plated, heating 3# -4# is started, the temperature of a substrate is set to 150 ℃, heating 5# -9# is closed, cooling to about 40 ℃ is carried out (the temperature is too high to prevent serious side etching in the etching process), debugging of a first piece is started, a CU target Ar is introduced into 375sccm, the transmission speed is set to 0.6m/min, and F-MO is required according to the film thickness of each layer: 300 + -100A; CU:15000±800A; S-MO: 300+ -100A) target sputtering rate calculation, F-MO power 3.5KW, CU:93KW, S-MO:3.5KW, beginning to evaluate the first piece, wherein the first piece needs to evaluate the film thickness and the physical and chemical properties of the finished product, the film thickness needs to be coated with high-temperature adhesive tapes on a plain glass substrate at equal intervals, and the film coating is started on the upper piece;
c. physical and chemical property evaluation: the film thickness of the film-coated sample and the film thickness of the product with the high-temperature adhesive tape are measured by a film thickness machine, the appearance, the optical properties of the film surface and the non-film surface, the resistance and the adhesive force are confirmed, and the mass production is started after the physicochemical properties are all OK.
d. In the production process, the apparent film color of the coated product is inspected in a sampling way, the sheet resistance is measured and monitored, and finally, all the coated product is packaged and put in storage for the subsequent process.
The specific improvement contrast of MoCuMo stress is as follows:
the film adhesion force is changed by changing the film stress. The formation of film stress is a complex process that develops during film formation and aging after film formation. For the reasons of film stress generation, there are mainly 3 mechanisms for causing film stress: thermal stress, internal stress, and external stress.
a. Thermal stress: in the film coating process, the substrate and the film are heated to a certain temperature at the same time, and after film coating is completed, when the substrate and the film are cooled to an initial temperature at the same time, the shrinkage degree of the substrate and the film is inconsistent due to the difference of expansion coefficients of the film material and the substrate. When the expansion coefficient of the substrate is smaller than that of the film material, generating tensile stress; otherwise, compressive stress is generated. If the substrate is at a certain temperature during film deposition and the temperature during stress measurement is the thermal stress due to the difference in thermal expansion coefficients between the film and the substrate.
b. Internal stress: also known as intrinsic stress, is mainly dependent on the microstructure and defects of the film, and the interaction caused by the grain boundaries and the mismatch of the film lattice and the substrate lattice is mainly. The cause of internal stress is relatively complex with respect to thermal stress, and is closely related to the source material and the process parameters of the deposition process, and each combination of materials and deposition processes needs to be studied in detail.
c. External stress: after the film coating is finished, the physical environment (such as working pressure, humidity and the like) of the film is changed, and when the changed conditions are greatly different from the original conditions, stress is caused, and the stress is called external stress. For the evaporated film, the film is relatively loose in structure, so that water molecules in the air are more or less absorbed in the cavity in the process of being transferred to the atmosphere and stored in the vacuum chamber after the deposition, and the mechanical stability of the film is affected.
The conventional metal structure of the MiniLED is MoCuMo (the film thickness range is that the bottom layer MO is 300+/-100A, the CU is 15000+/-800A, and the top layer MO is 300+/-100A); the main adjustment direction of improving the adhesive force by changing the film stress is as follows:
1. internal stress adjustment, compared with the original design of normal film structure, MOCUMO is sputtered on the plain glass substrate, but due to the influence of the internal stress, the film is torn by using a 3M610 adhesive tape after being plated, and the film is fallen off in a large area. At present, a layer of SiNx is plated between a CU film layer and a substrate, the thickness of the SiNx film is about 600A, and the SiNx film layer has a compressive stress due to the existence of a tensile stress of the CU film layer, so that the stress balance effect is achieved through a stress reduction principle;
2. the temperature of a conventional metal coating substrate is adjusted to 75 ℃, and as the thickness of a cu layer is thicker, the speed is reduced or sputtering is required for 2 or even 3 circles in the coating process, and the expansion coefficients of a film material and a substrate are different, so that the contraction degree of the film material and the substrate is inconsistent, the thermal stress of the film layer is overlarge, the adhesion force is abnormal, the target is heated and the auxiliary heating is completely closed for improving the thermal stress sputtering, and the room-temperature coating is used (usually, the heating is closed and the temperature is reduced by about 3H).
3. External stress adjustment:
a. adjusting the gas pressure of a cavity, wherein the background vacuum degree of a normal vacuum cavity is 5.0x10 < -3 > Pa, when Ar (300 sccm) gas is introduced to boost the pressure to 0.4 Pa-0.6 Pa, filling a substrate into the vacuum cavity, introducing Ar gas, applying negative bias to the substrate, bombarding the surface of the substrate by adopting magnetron sputtering, adjusting cu target gas through external stress, respectively introducing 375sccm, and reducing the external stress to improve the film adhesion by boosting the gas to 0.5-0.7 Pa;
b.F-MO oxygen ventilation amount is regulated, normal metal plating is carried out, F-MO oxygen ventilation amount is about 20-30 sccm, the purpose is to improve the adhesive force of a metal film layer, but the thicker stress of a MoCuMo film layer is larger, and F-MO is directly not ventilated to oxygen in order to reduce the stress between the film layers;
and c, adjusting the power of the cu film layer, wherein the thicker the film thickness of the cu film layer, the more corresponding targets are used, and the average power of each target is opened under normal conditions, but the effect of decreasing the power from large to small is optimal by comparing and verifying the different distribution of the power due to the influences of stress, crystallization degree and etching back side etching among the film layers;
after the scheme is adopted, the MoCuMo adhesive force is improved to be qualified through the improvement of the film stress, and a foundation is laid for the development of MiniLED.
In the description of the present invention, it should be understood that the terms "coaxial," "bottom," "one end," "top," "middle," "another end," "upper," "one side," "top," "inner," "front," "center," "two ends," etc. indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "configured," "connected," "secured," "screwed," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intermediaries, or in communication with each other or in interaction with each other, unless explicitly defined otherwise, the meaning of the terms described above in this application will be understood by those of ordinary skill in the art in view of the specific circumstances.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (10)

1. The MiniLED coating method is characterized by comprising the following steps of:
1) Priming SiNx coating; 2) MoCuMo coating;
the step 1) includes: a. preparing a raw material substrate; b. cleaning a substrate; c, siNx coating;
the step 2) includes: a. cleaning a substrate; moCuMo coating; c. physical and chemical property evaluation; d. and (5) mass production of products.
2. The MiniLED coating method of claim 1, wherein in the step a of the step 1), a predetermined substrate is selected, wherein the substrate size and the substrate type are selected, and the substrate type is selected to include a strong substrate or a non-strong substrate.
3. The MiniLED coating method of claim 2, wherein in the step b of the step 1), a cleaning machine is added with KOH liquid with a volume ratio of 5%, an upper brush and a lower brush are pressed in, an AP machine is started, and organic matters and dirt on the surface of the substrate are treated.
4. The MiniLED coating method as in claim 3, wherein in step c of step 1), first part evaluation is performed, the substrate temperature is selected to be 230 ℃, 1KW is calculated to be 23A according to SiNx sputtering rate, 26KW is started according to film thickness requirement 600A, coating is started on a substrate frame to be coated, and mass production is started after all physicochemical items, film thickness and adhesion are qualified.
5. The MiniLED coating method of claim 4, wherein in step a of step 2), KOH liquid with a volume ratio of 3% is added into the cleaning machine, the upper and lower brushes are pressed in normally, the AP machine is started, and the substrate plated with SiNx process is cleaned.
6. The MiniLED coating method of claim 5, wherein in the step b of the step 2), the performance of the film forming machine is firstly required to be confirmed, 7 heating chambers are respectively 3# chamber to 9# chamber, and when MoCuMo is coated: heating the 3# chamber and the 4# chamber, setting the temperature of the substrate to 150 ℃, and closing the 5# 9# heating; when the temperature is reduced to about 40 ℃ of the chamber, starting to debug the first part, introducing 375sccm into a CU target Ar, setting the transmission speed to 0.6m/min, and according to the film thickness requirement F-Mo of each layer: 300 + -100A; cu:15000±800A; S-Mo: calculating the sputtering rate of the target material of 300+/-100A, wherein the F-Mo power is 3.5KW, and Cu:93KW, S-Mo:3.5KW, the first part is evaluated, the film thickness and the physical and chemical properties of the finished product are evaluated, high-temperature adhesive tapes are adhered to the plain glass substrate at equal intervals, and film coating is started after film loading.
7. The MiniLED coating method as in claim 6, wherein in step c) above, the coated sample is measured for the thickness of the coated film by a film thickness machine, the appearance, optical and non-film surface of the finished sample is confirmed, the resistance is measured, and the adhesion is confirmed, and mass production is started after all physical and chemical properties are qualified.
8. The MiniLED coating method of claim 7, wherein in the step d of the step 2), the products are produced in batch, the apparent film color of the coated products is subjected to spot check and sheet resistance measurement and monitoring in the production process, and finally all the coated products are packaged and put in storage for subsequent processing.
9. The MiniLED coating method as in claim 8, wherein in step b) above, the cavity gas pressure is adjusted, the background vacuum degree of the normal vacuum cavity is 5.0X10-3 pa, when Ar-300sccm gas is introduced to boost the pressure to 0.4 pa-0.6 pa, the substrate is placed in the vacuum cavity, ar gas is introduced, negative bias is applied to the substrate, the surface of the substrate is bombarded by magnetron sputtering, cu target position is adjusted by external stress, 375sccm gas is introduced respectively, and the gas is boosted to 0.5-0.7 pa.
10. The MiniLED coating method of claim 9, wherein F-Mo is not introduced with oxygen in the step b of the step 2).
CN202311052787.1A 2023-08-21 2023-08-21 MiniLED coating method Pending CN117107203A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311052787.1A CN117107203A (en) 2023-08-21 2023-08-21 MiniLED coating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311052787.1A CN117107203A (en) 2023-08-21 2023-08-21 MiniLED coating method

Publications (1)

Publication Number Publication Date
CN117107203A true CN117107203A (en) 2023-11-24

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