CN117097288B - Dual-mode resonance device, dual-output MEMS oscillator and temperature compensation method - Google Patents
Dual-mode resonance device, dual-output MEMS oscillator and temperature compensation method Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
- H03H9/02448—Means for compensation or elimination of undesired effects of temperature influence
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- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques
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Abstract
The invention provides a dual-mode resonance device, which comprises an inner resonator and an outer resonator which are arranged in a nested way, wherein the inner resonator comprises an inner resonance body and an inner ring electrode, and the inner ring electrode array is arranged near the inner resonance body so as to enable the inner resonance body to generate vibration of a first frequency when an excitation signal is applied; the outer resonator comprises an outer resonator body and outer ring electrodes on the inner side and the outer side of the outer resonator body, and the outer ring electrodes are arranged at intervals so as to enable the outer resonator body to generate vibration of a second frequency when an excitation signal is applied; the second frequency has higher-order modal frequency compared with the first frequency, and the inner resonator and the outer resonator which are combined in a nested way are adopted to replace the existing mode of arranging the double resonators side by side, so that double-frequency output is realized through the double resonators, and the dynamic impedance of a high-frequency vibration mode can be reduced. By using the dual-mode resonance device to execute the temperature compensation method, the accuracy of temperature measurement can be improved, so that the dual-frequency output signal is compensated, and the stability of the frequency output signal is improved.
Description
Technical Field
The invention relates to the technical field of micro-electromechanical systems, in particular to a dual-mode resonance device, a dual-output MEMS oscillator and a temperature compensation method.
Background
Microelectromechanical systems (MEMS, micro-Electro-Mechanical System) are a high-tech field based on microelectronics and micromachining technologies. MEMS technology can integrate mechanical components, drive components, electrical control systems, digital processing systems, etc. into one integral miniature unit. MEMS devices have the advantages of being small, intelligent, executable, integrated, good in process compatibility, low in cost and the like. The development of MEMS technology opens up a brand new technical field and industry, and micro sensors, micro actuators, micro components, micro mechanical optical devices, vacuum microelectronic devices, power electronic devices and the like manufactured by utilizing the MEMS technology have very wide application prospects in the fields of aviation, aerospace, automobiles, biomedicine, environmental monitoring, military, internet of things and the like.
The frequency-temperature drift is one of key performance indexes of the micro-electromechanical resonator, the frequency temperature stability of the resonator is measured by a frequency temperature coefficient (Temperature coefficient of frequency, TCF), the first-order frequency temperature coefficient is determined by a temperature elastic coefficient (TCE) and a thermal expansion coefficient (a) of a resonator material, namely the frequency temperature coefficient of the micro-electromechanical resonator which is not subjected to temperature compensation is generally larger, and the output frequency of the micro-electromechanical resonator can generate frequency drift exceeding 3500ppm in the range of industrial-grade temperature-40-85 ℃, so that the output frequency of the micro-electromechanical resonator cannot meet the actual application requirements of industry. For this purpose, the amount of change in the resonant frequency due to temperature decrease needs to be compensated, and the effective compensation is required to accurately acquire the temperature measurement result causing the change in the resonant frequency. Therefore, temperature compensation of microelectromechanical resonators is required in clock applications. Currently, existing MEMS TCXO (temperature compensated oscillator) products mainly use a single resonator dual mode or dual resonator mode to achieve temperature measurement and compensate for frequency output based on measured temperature information.
At present, a single resonator dual-mode structure generally uses an in-plane electrode to excite an in-plane lablab (lame) vibration mode, and uses an out-of-plane electrode to excite an out-of-plane vibration mode, wherein the lame (lame) vibration mode is kept to vibrate at a frequency of 1-10 MHz so as to ensure lower dynamic impedance. However, in high frequency clock applications (clock signal generated by resonator vibration), additional up-conversion using a phase locked loop is often required, which may result in poor stability of the frequency output signal, i.e., poor phase noise and jitter performance of the frequency output signal. The dual resonator structure generally adopts a mode of arranging two resonators side by side, and under the structural arrangement, if a temperature difference exists at two sides of a chip, a temperature gradient also exists between the two resonators, so that the accuracy of temperature measurement is affected.
Therefore, how to improve the temperature measurement accuracy of the resonator and the stability of the output frequency signal has become one of the technical problems to be solved by those skilled in the art.
It should be noted that the foregoing description of the background art is only for the purpose of facilitating a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background section of the present application.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a dual-mode resonator device, a dual-output MEMS oscillator and a temperature compensation method for solving the problems of insufficient temperature measurement accuracy in the existing dual-mode resonator and significant rise of dynamic impedance with the resonant frequency in the application of generating a high-frequency clock.
To achieve the above and other related objects, the present invention provides a dual mode resonant device comprising a bottom-up substrate layer, a dielectric layer, and a device layer, the device layer comprising inner and outer resonators in a nested arrangement, the inner resonator comprising an inner resonator body and an inner ring electrode, the inner ring electrode array being disposed adjacent the inner resonator body to cause the inner resonator body to vibrate at a first frequency upon application of an excitation signal; the outer resonator comprises an outer resonator body and outer ring electrodes inside and outside the outer resonator body, the outer resonator body is laterally connected through a peripheral anchoring part so that the outer resonator body is suspended above the substrate layer, and the outer ring electrodes are arranged at intervals so that the outer resonator body generates vibration of a second frequency when an excitation signal is applied; wherein the second frequency has a higher order modal frequency than the first frequency.
Optionally, the inner resonator body is configured as a square block shaped single resonator body, and the outer resonator body comprises a plurality of outer resonator units coupled in cascade.
Optionally, the inner ring electrodes are arranged in an array around each corner of the inner resonator body and the inner ring electrodes are applied with an ac drive signal to operate the inner resonator body in a face shear mode.
Optionally, the inner ring electrodes are located on the inner resonator body and arranged in an array, and the inner ring electrodes are applied with an alternating drive signal to cause the inner resonator body to operate in out-of-plane vibration.
Optionally, an isolating ring is arranged between the inner resonator body and the outer resonator body, the inner resonator body is fixedly connected to the substrate layer through a central anchor point, so that the inner resonator body is in a suspended state, the central anchor point is connected with a direct-current bias voltage, and the isolating ring is grounded so that the inner resonator is electrically isolated from the outer resonator.
Optionally, an isolating ring is arranged between the inner resonator and the outer resonator, the isolating ring is fixedly connected with the inner resonator through a coupling beam so that the inner resonator is in a suspended state, and the isolating ring is connected with direct-current bias voltage.
Optionally, the outer resonator is configured such that the outer resonator unit and the coupling section are diagonally coupled to form a ring-shaped array structure, and the outer resonator operates in an in-plane shear mode or a lame mode.
The invention also provides a temperature compensation method, which is executed by using the dual-mode resonance device, and comprises the following steps:
exciting the inner resonator to generate an output signal at a first frequency, and exciting the outer resonator to generate an output signal at a second frequency;
performing signal processing on the first frequency output signal and the second frequency output signal to obtain an output signal of a third frequency, wherein the third frequency has an approximately linear frequency-temperature relation curve;
temperature information of the resonator chip is extracted from the third frequency, and the output signal of the first frequency and/or the second frequency is temperature compensated based on the resonator chip temperature information.
Optionally, the step of acquiring the third frequency output signal includes: and mixing the first frequency output signal and the second frequency output signal.
The present invention provides a dual output MEMS oscillator configured to temperature compensate a resonance signal according to the aforementioned temperature compensation method.
As described above, the dual-mode resonance device and the temperature compensation method have the following beneficial effects:
according to the dual-mode resonance device, the inner resonator and the outer resonator which are combined in a nested manner are adopted to replace the existing dual-resonator side-by-side arrangement mode, dual-frequency output is achieved through the dual-resonator, the dynamic impedance of a high-frequency vibration mode can be reduced, and the performance requirements of the resonators are completely met.
According to the temperature compensation method, the dual-mode resonance device is used for acquiring the first frequency signal and the second frequency signal with a higher order mode, and the third frequency which is strongly correlated with the temperature is acquired based on the first frequency and the second frequency and is used for indicating the ambient temperature of the resonator chip, so that the accuracy of temperature measurement can be improved, the dual-frequency output signal is compensated, and the stability of the frequency output signal is improved.
Drawings
Fig. 1 shows an exemplary isometric view of a dual mode resonant device of the present invention.
Fig. 2 is a top view of the dual mode resonator device of fig. 1.
Fig. 3 is a schematic diagram showing cascade coupling of external resonant cells in a dual mode resonant device of the present invention.
Fig. 4 is a schematic diagram showing another example of cascade coupling of external resonance units in the dual mode resonance device of the present invention.
FIG. 5 is a schematic diagram of a portion of a dual mode resonator device of the present invention.
Fig. 6 shows another exemplary isometric view of the dual mode resonator device of the present invention.
Fig. 7 is a diagram showing a profile of a vibration mode of an inner resonator body in the dual-mode resonance device according to the present invention.
Fig. 8 is a graph showing the relationship between the first frequency and the temperature obtained in step S110 of the MEMS-based temperature compensation method according to the present invention.
Fig. 9 is a graph showing the vibration amplitude of a displacement node of an external resonator operating in an in-plane shear mode in the MEMS-based temperature compensation method of the present invention.
Fig. 10 is a graph showing the relationship between the second frequency and the temperature obtained in step S110 of the temperature compensation method according to the present invention.
FIG. 11 shows a table of structural parameters of an external resonator and its components in a dual mode resonator device of the present invention.
Fig. 12 is a graph illustrating a third frequency versus temperature relationship obtained in step S120 of the temperature compensation method of the present invention.
Fig. 13 shows a flow chart of the temperature compensation method of the present invention.
Reference numerals illustrate:
a substrate layer-10; dielectric layer-20; device layer-30; an inner resonator body-310; a central anchor point-312; inner ring in-plane electrode-314; an inner ring surface outer electrode-414; an inner coupling beam-332; spacer ring-316; an outer resonator body-320; an outer resonant cell-321; a coupling portion-322; outer ring electrode-324; a support beam-334; an out-coupling beam-336; peripheral anchor-326.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
It should be noted that the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
Hereinafter, the details of the present invention will be described in detail with reference to the accompanying drawings.
The invention provides a dual mode resonant device comprising a substrate layer 10, a dielectric layer 20 and a device layer 30 from bottom to top, the device layer 30 comprising an inner resonator and an outer resonator in a nested arrangement, the outer resonator being centrally disposed around the inner resonator.
Referring to fig. 1, a schematic structure of a dual-mode resonator device according to the present invention is shown. The inner resonator includes an inner resonator body 310 and an inner ring electrode array disposed near the inner resonator body 310 to cause the inner resonator body 310 to generate vibration of a first frequency when an excitation signal is applied. The outer resonator includes an outer resonator body 320 and an outer ring electrode 324, the outer resonator body 320 is laterally connected to the substrate layer 10 through a peripheral anchor 326, the outer ring electrode 324 is disposed at intervals inside and outside the outer resonator body 320 to generate vibration of a second frequency in the outer resonator body 320 when an excitation signal is applied; wherein the second frequency has a higher order modal frequency than the first frequency. Through the combination of nested setting inner resonator and outer resonator, the dual-mode resonance signal output is realized to the dual-resonator, optimizes the dynamic impedance under the high frequency mode, and the inner resonator and the outer resonator of concentric setting possess better structural symmetry simultaneously, are favorable to promoting the accuracy in the temperature measurement application.
In an embodiment of the present application, an in-plane driven or out-of-plane driven mode of the inner resonator may be implemented according to the positioning of the inner ring electrode, wherein the inner resonator body 310 may operate in an in-plane vibration mode, or an out-of-plane vibration mode, wherein the in-plane vibration mode of the inner resonator body 310 includes one of a lame (lame) vibration mode and a face shear (face-shear) vibration mode; whereby another in-plane or out-of-plane vibration can be provided simultaneously for temperature measurement of the resonator.
In some embodiments, the inner resonator body 310 is configured as a square-block shaped single resonator body, and the outer resonator body 320 includes a plurality of outer resonator elements 321 coupled in cascade.
In the dual-mode resonant device shown in fig. 2, inner ring electrodes are located at the periphery of the inner resonant body 310, the inner ring electrodes are arranged in an array around inner ring surface inner electrodes 314 at each corner of the inner resonant body 310, the inner ring surface inner electrodes 314 are configured as right angles, and an ac driving signal is applied to adjacent inner ring surface inner electrodes 314 to excite the inner resonant body 310 to operate in a face-shear (face-shear) mode.
In the dual mode resonance device shown in fig. 6, inner ring electrodes are disposed on the inner resonator body 310 and are arranged in an array, the inner ring electrodes are arranged as inner ring surface outer electrodes 414, the inner ring surface outer electrodes 414 are configured as isosceles trapezoids, and an ac driving signal is applied to the adjacent inner ring surface outer electrodes 414 to excite the inner resonator body 310 to operate in out-of-plane vibration.
Further, an isolation ring 316 is disposed between the inner resonator body 310 and the outer resonator body 320, and the isolation ring 316 is grounded to electrically isolate the inner resonator body 310 from the outer resonator body 320; accordingly, as shown in fig. 5, the inner resonator further includes a central anchor point 312, and the inner resonator body 310 may be fixedly connected to the substrate layer 10 through the central anchor point 312, so that the inner resonator body 310 is in a suspended state and is vibrated, and meanwhile, the central anchor point 312 is connected to a dc bias voltage and is used as a dc bias electrode of the inner resonator.
In an additional or alternative implementation, the isolation ring 316 is fixedly connected to the inner resonator body 310 by an inner coupling beam 332, so that the inner resonator body 310 is in a suspended state, and the isolation ring 316 is connected to a dc bias voltage, which acts as a dc bias electrode for the inner resonator.
In some embodiments, referring to fig. 3-4, the outer resonator body 320 is arranged in a cascade coupling of a plurality of outer resonator elements 321 into a ring array, the outer resonator body 320 may be connected to a peripheral anchor 326 by a support beam 334, the peripheral anchor 326 being configured to apply a dc bias voltage to the outer resonator body 320. For example, the support beam 334 may have a single beam structure or a composite beam structure, and the shape is at least one of rectangular, frame-shaped, arc-shaped, and comb-shaped.
For example, referring to fig. 3 to 4, the outer resonant unit 321 is configured in a square block shape, and the outer resonant body 320 is provided such that the outer resonant unit 321 and the coupling part 322 are sequentially coupled in a ring array, wherein the coupling part 322 may have a bar shape, a square block shape, a cross shape, or a shape similar to the outer resonant unit 321. As shown in fig. 1, the plurality of external resonant cells 321 are coupled in a one-dimensional array by opposite sides of the square coupling portion. As shown in fig. 3, a plurality of outer resonant cells 321 are diagonally coupled into a one-dimensional array through square coupling parts, and the outer resonant cells 321 positioned at the ends may construct an outer resonant array around the inner resonant body 310 through the outer coupling beams 336 and the support beams 334. As shown in fig. 4, adjacent outer resonant cells 321 are sequentially diagonally coupled in a ring-shaped array by coupling portions of the beam structure. Since the external resonance unit 321 has the same eigenfrequency as the coupling portion 322, it is used to achieve modal coupling and energy transfer.
It should be noted that the arrangement of the outer resonator body 320 described in connection with the illustration is only exemplary, and different forms of outer resonator may be implemented according to the cascade arrangement of the outer resonator body 320.
In a specific example, the inner resonator operates in a face shear mode driven by an inner ring face inner electrode 314 positioned adjacent to the inner resonator body 310, the inner resonator body 310 vibrating in the face shear mode and having a first frequency, the first frequency being a low frequency/low order mode, typically below 10MHz, the first frequency having a first frequency temperature coefficient; accordingly, the outer resonator may also operate in an in-plane shear mode driven by the outer ring electrodes 324 on the inner and outer sides of the distributed outer resonator body 320, the outer resonator body 320 vibrating in a lame mode having a second frequency, which is a high frequency/high order mode, typically above 10MHz, with a second frequency temperature coefficient. Referring to fig. 7, which shows a vibration mode profile of the inner resonator body 310, the inner resonator body 310 is shown operating in a face shear mode with a mode frequency of 7.218MHz. Referring to fig. 9, which shows a vibration mode profile of the outer resonator body 320, the outer resonator body 320 is shown operating in a high frequency lame mode with a mode frequency of 50.73MHz.
In order to verify the advantages of the dual-mode resonance device in the aspect of electrical performance, as the outer resonator 320 vibrates in a Lam (lame) mode and is in a high-frequency mode, a preferable implementation mode of the outer resonator is adopted to perform simulation analysis, and the obtained simulation parameters and results thereof are shown in fig. 11, and according to the results, the width of an outer resonance unit is 65 [ mu ] m, the length of one side of the outer resonance array is 845 [ mu ] m, the thickness of the outer resonance unit is 40 [ mu ] m, the interval between an outer ring electrode and the outer resonator is 0.27 [ mu ] m, the alternating current voltage of the outer ring electrode is 0.1V, the direct current bias voltage of the outer resonator is 25V, and the simulation result shows that the outer resonator works in the high-frequency mode and has the dynamic impedance of 1.48kΩ, and the impedance of the high-frequency resonance mode can be reduced. The output of the high-frequency Lame vibration mode signal can be realized under the condition of low impedance, and the phase-locked loop is not needed to be used for carrying out additional up-conversion, so that the problems of poor phase noise and jitter performance of the frequency output signal caused by the additional up-conversion of the phase-locked loop are avoided.
The present invention also provides a MEMS-based temperature compensation method, which has been described in detail in the embodiments of the present application hereinabove with respect to a plurality of different implementations of a dual-mode resonant device, and the temperature compensation method described herein is preferably performed using the dual-mode resonant device as described hereinabove.
In the temperature compensation method shown in fig. 13, the temperature compensation method is performed using the aforementioned dual mode resonance apparatus, and includes:
s110: exciting the inner resonator to generate an output signal at a first frequency, and exciting the outer resonator to generate an output signal at a second frequency;
s120: performing signal processing on the first frequency output signal and the second frequency output signal to obtain an output signal of a third frequency, wherein the third frequency has an approximately linear frequency-temperature relation curve;
s130: temperature information of the resonator chip is extracted from the third frequency, and the output signal of the first frequency and/or the second frequency is temperature compensated based on the resonator chip temperature information.
Based on the technical scheme, the temperature information of the resonator chip is acquired based on the high-frequency output signal by operating the dual-mode resonance device, so that the accuracy of temperature measurement can be improved, and the stability of frequency output is improved.
Specifically, at step S110, the inner resonator and the outer resonator have a first frequency temperature coefficient and a second frequency temperature coefficient, respectively, the two frequency temperature coefficients having different values and trends. Taking a silicon resonator as an example, the temperature dependence of the resonant frequency is generally determined by a first-order coefficient and a second-order coefficient, and can be represented by the following formula 1:
1 (1)
Wherein,andthe first order frequency temperature coefficient and the second order frequency temperature coefficient,is a temperature change.
As shown in fig. 8 and 10, which are graphs showing the first frequency and the second frequency of the microelectromechanical resonator output of the present invention as a function of temperature, wherein the first frequency is a temperature coefficient= -11.218ppm/K, second frequency temperature coefficient=2.8366ppm/K。
In some embodiments, step S120 includes: performing a mixing process on the output signal of the first frequency and the output signal of the second frequency by using a temperature extraction unit to obtain an output signal with a third frequency, wherein the mixing process is configured to be a second order temperature coefficient of the first frequency and the second frequency during the processingAndcancellation, i.e. subtracting the product of the second order temperature coefficient of the first frequency multiplied by a given factor from the second order temperature coefficient of the second frequency minimizes or zeroes out, the third frequency output signal is obtained with a linear and strongly temperature dependent frequency temperature dependence. Because the outer resonator generates vibration in a higher order mode than the inner resonator, a frequency-temperature relation curve with approximate linearity can be obtained based on the mixing process, the up-conversion process of the phase-locked loop circuit is reduced, and the phase-locked loop circuit is changedPhase noise and jitter performance of the frequency output signal are improved.
As shown in fig. 12, a graph of a third frequency versus temperature is shown, temperature information of the resonator is extracted based on the third frequency, and the temperature compensation is performed on the first frequency output signal or the second frequency output signal, the third frequency has a third frequency temperature relationship curve which is linear and has strong correlation with temperature, and the temperature measurement is performed by using the third frequency.
According to the technical scheme, based on the extracted resonator chip temperature information, temperature compensation is performed on the first frequency output signal or the second frequency output signal, so that temperature stability of the output frequency is realized.
In some embodiments, step S130 includes: using a temperature compensation unit, performing temperature compensation on the output signal of the first frequency and/or the output signal of the second frequency based on the extracted resonator chip temperature information, wherein the temperature compensation method comprises the following steps of: the extracted environmental temperature data is subjected to temperature fitting circuit to obtain a compensation value of a first frequency output signal and/or a second frequency output signal; and then performing temperature compensation based on the first frequency output signal and/or the second frequency output signal and compensation values thereof.
Optionally, after the temperature compensation method is performed, the compensated first frequency output signal and/or second frequency output signal is subjected to frequency division processing or frequency multiplication processing, and output via a buffer amplifier.
The present invention also provides a dual output MEMS oscillator configured to temperature compensate a resonance signal according to the aforementioned temperature compensation method,
according to the dual-mode resonance device, the inner resonator and the outer resonator which are combined in a nested mode are adopted to replace the existing dual-resonator side-by-side mode, dual-frequency output is achieved through the dual-resonator, dynamic impedance of a high-frequency vibration mode can be reduced, high-frequency Lame vibration mode signal output can be achieved under the condition of low impedance, and additional up-conversion is not needed by using a phase-locked loop, so that the problem that phase noise and jitter performance of a frequency output signal are poor due to the fact that the phase-locked loop is used for additional up-conversion is avoided. Completely meets the performance requirement of the resonator.
According to the MEMS-based temperature compensation method, the dual-mode resonance device is used for acquiring the first frequency signal and the second frequency signal with a higher order mode, and acquiring the third frequency with strong temperature correlation based on the first frequency and the second frequency, so that the ambient temperature of the resonator chip is indicated, the accuracy of temperature measurement can be improved, the dual-frequency output signal is compensated, and the stability of the frequency output signal is improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (9)
1. A dual mode resonator device comprising a bottom-up substrate layer, a dielectric layer and a device layer, characterized in that: the device layer comprises an inner resonator and an outer resonator which are arranged in a nested manner, the inner resonator comprises an inner resonator body and an inner ring electrode, the inner ring electrode array is arranged near the inner resonator body so as to enable the inner resonator body to generate vibration of a first frequency when an excitation signal is applied, and the inner resonator body works in out-of-plane vibration; the outer resonator comprises an outer resonator body and outer ring electrodes inside and outside the outer resonator body, the outer resonator body is laterally connected through a peripheral anchoring part so that the outer resonator body is suspended above the substrate layer, the outer ring electrodes are arranged at intervals so that the outer resonator body generates vibration of a second frequency when an excitation signal is applied, and the outer resonator body works in an in-plane shearing mode or a Ramez mode; the external resonance body is arranged into a plurality of external resonance units which are coupled in cascade to form a ring-shaped array, adjacent external resonance units in the plurality of external resonance units are sequentially coupled diagonally or in opposite sides through a coupling part, the external resonance units are configured into a square block shape, the shape of the coupling part is configured into a bar shape, a square block shape or a cross shape, and the second frequency has a higher-order modal frequency than the first frequency;
the dual mode resonant device is operated to temperature compensate the resonant signal by: exciting the inner resonator to generate an output signal at a first frequency, and exciting the outer resonator to generate an output signal at a second frequency; performing signal processing on the first frequency output signal and the second frequency output signal to obtain an output signal of a third frequency, wherein the third frequency has an approximately linear frequency-temperature relation curve; temperature information of the resonator chip is extracted from the third frequency, and the output signal of the first frequency and/or the second frequency is temperature compensated based on the resonator chip temperature information.
2. The dual mode resonating device of claim 1, wherein: the inner resonator body is configured as a square-block-shaped single resonator body, and the outer resonator body includes a plurality of outer resonator units coupled in cascade.
3. The dual mode resonating device of claim 2, wherein: the inner ring electrodes are arranged in an array around each corner of the inner resonator body and are applied with an alternating drive signal to operate the inner resonator body in a face shear mode.
4. The dual mode resonating device of claim 2, wherein: the inner ring electrodes are located on the inner resonator body and arranged in an array, and the inner ring electrodes are applied with an alternating current driving signal.
5. The dual mode resonating device of claim 1, wherein: an isolation ring is arranged between the inner resonator body and the outer resonator body, the inner resonator body is fixedly connected to the substrate layer through a central anchor point so that the inner resonator body is in a suspended state, the central anchor point is connected with direct-current bias voltage, and the isolation ring is grounded so that the inner resonator is electrically isolated from the outer resonator.
6. The dual mode resonating device of claim 1, wherein: an isolating ring is arranged between the inner resonant body and the outer resonant body, the isolating ring is fixedly connected with the inner resonant body through a coupling beam so that the inner resonant body is in a suspended state, and the isolating ring is connected with direct-current bias voltage.
7. The dual mode resonating device of claim 2, wherein: the outer resonator body is arranged in a circular array structure formed by diagonally coupling the outer resonator unit and the coupling part.
8. The dual mode resonating device of claim 1, wherein: the step of obtaining the third frequency output signal includes: and mixing the first frequency output signal and the second frequency output signal.
9. A dual output MEMS oscillator, characterized by: the dual output MEMS oscillator is configured to temperature compensate a resonance signal using the dual mode resonance device according to any one of claims 1 to 8.
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| WO2014112951A1 (en) * | 2013-01-15 | 2014-07-24 | Agency For Science, Technology And Research | Dual mode resonator |
| CN112352143A (en) * | 2018-06-29 | 2021-02-09 | 斯塔特拉Ip控股公司 | Dual output microelectromechanical resonator and methods of making and operating same |
| CN114785310A (en) * | 2022-04-29 | 2022-07-22 | 西安交通大学 | Silicon MEMS resonator and self-compensation method for realizing frequency drift by body piezoresistance heat thereof |
| CN115242209A (en) * | 2021-04-23 | 2022-10-25 | 华为技术有限公司 | Resonator package and oscillator |
| CN116232229A (en) * | 2022-09-08 | 2023-06-06 | 北京无线电计量测试研究所 | Temperature compensation method of temperature compensation crystal oscillator and crystal oscillator |
| CN116667807A (en) * | 2023-06-16 | 2023-08-29 | 麦斯塔微电子(深圳)有限公司 | Double-sided internal mode temperature compensation resonator |
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| WO2014112951A1 (en) * | 2013-01-15 | 2014-07-24 | Agency For Science, Technology And Research | Dual mode resonator |
| CN112352143A (en) * | 2018-06-29 | 2021-02-09 | 斯塔特拉Ip控股公司 | Dual output microelectromechanical resonator and methods of making and operating same |
| CN115242209A (en) * | 2021-04-23 | 2022-10-25 | 华为技术有限公司 | Resonator package and oscillator |
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