CN117096727A - Debugging system and method for electroabsorption modulation laser - Google Patents

Debugging system and method for electroabsorption modulation laser Download PDF

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Publication number
CN117096727A
CN117096727A CN202311024874.6A CN202311024874A CN117096727A CN 117096727 A CN117096727 A CN 117096727A CN 202311024874 A CN202311024874 A CN 202311024874A CN 117096727 A CN117096727 A CN 117096727A
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control signal
electroabsorption
module
transistor
laser
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朱雁祥
汪良华
周俊
杨建军
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Jiangsu Keda Hengxin Semiconductor Technology Co ltd
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Jiangsu Keda Hengxin Semiconductor Technology Co ltd
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Priority to CN202311024874.6A priority Critical patent/CN117096727A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The application relates to a debugging system and method of an electroabsorption modulation laser, and belongs to the technical field of lasers. Comprising the following steps: the MCU outputs a first control signal to the negative pressure control module to control the EAM negative pressure of the electroabsorption modulation laser, and based on the current EAM negative pressure, the MCU outputs a second control signal which is continuously increased to the driving module to control the current of the electroabsorption modulation laser; comparing the output power of the electroabsorption modulated laser with the target power value and other indexes and corresponding target values; when the output power is successfully debugged and other indexes are not successfully debugged, the first control signal is increased to reduce EAM negative pressure; when the output power is not successfully debugged, the first control signal is reduced to increase the EAM negative pressure until all indexes are successfully debugged. The application determines the debugging direction of the EAM negative pressure through the output power, continuously reduces the debugging range of the EAM negative pressure and improves the debugging efficiency of the electroabsorption debugging laser.

Description

Debugging system and method for electroabsorption modulation laser
Technical Field
The application relates to the technical field of lasers, in particular to a debugging system and method of an electroabsorption modulation laser.
Background
The semiconductor laser is a device for generating laser by using semiconductor crystals, and is widely applied to the fields of industry, military, medical treatment, communication and the like by virtue of the advantages of small volume, light weight, high efficiency, long service life and the like.
The electroabsorption modulated laser (External Modulated Laser, EML) is an integrated device of electroabsorption modulator (Electroabsorption Modulators, EAM) and distributed feedback laser (Distributed Feedback Laser, DFB). Before the electroabsorption modulation laser emits, the current and EAM negative pressure of the electroabsorption modulation laser are required to be adjusted, so that indexes such as output power and extinction ratio of the laser, rising time of pulse signals and the like reach target values. In a general debugging process, a minimum initial EAM negative pressure value is required to be determined first, then a dichotomy is used for debugging the current of the laser, if the current EAM negative pressure value cannot enable the output power and other indexes of the laser to reach target values, the EAM negative pressure value is deepened for debugging again until the indexes such as the output power and extinction ratio of the electroabsorption modulation laser reach the target values. The debugging method only mechanically deepens the EAM negative pressure until all indexes are successfully debugged, and the EAM negative pressure adjusting direction is not clear, so that the whole debugging process is low in efficiency and time-consuming.
In summary, the existing method for debugging the electroabsorption modulated laser has the problems of low efficiency and time consumption in the debugging process.
Disclosure of Invention
Therefore, the application aims to solve the technical problems of low efficiency and time consumption in the debugging process of the EML laser in the prior art.
In order to solve the above technical problems, the present application provides a debug system of an electroabsorption modulated laser, including:
an MCU, comprising:
the control signal output module is used for outputting a first control signal and a second control signal which is continuously increased;
the parameter receiving module is used for receiving the output power and other indexes of the electric absorption modulation laser transmitted by the external machine station;
the parameter comparison module is used for comparing the output power with the target power value and the other indexes with the corresponding target values;
a parameter adjustment module for adjusting the output power to be equal to or higher than the target power value
When the other indexes are not all larger than or equal to the corresponding target values, taking the current first control signal as a reference signal and increasing the first control signal; when the output power is smaller than the target power value, reducing a first control signal, wherein the reduced first control signal is not smaller than the reference control signal;
the input end of the negative pressure control module is connected with the control signal output module of the MCU, and the output end of the negative pressure control module is connected with the electroabsorption modulator module of the electroabsorption modulation laser and is used for converting a first control signal into a negative pressure signal and transmitting the negative pressure signal to the electroabsorption modulator module so as to control the EAM negative pressure of the electroabsorption modulation laser;
and the input end of the driving module is connected with the control signal output module of the MCU, and the output end of the driving module is connected with the DFB laser module of the electroabsorption modulation laser and is used for converting the second control signal into a current signal and transmitting the current signal to the DFB laser module so as to control the current of the electroabsorption modulation laser.
In one embodiment of the present application, a first protection circuit is further included, including:
the first port of the first resistor is connected with the output end of the driving module, and the second port of the first resistor is connected with the DFB laser module;
and the emitter of the first transistor is connected with the first port of the first resistor, the collector of the first transistor is connected with the MCU, the first transistor is grounded through the second resistor, and the base of the first transistor is connected with the second port of the first resistor through the first switch.
In one embodiment of the present application, the first protection circuit further includes a second transistor, a source of which is connected to the second port of the first resistor, a drain of which is connected to the base of the first transistor, and a gate of which is connected to the MCU, for receiving a third control signal output from the MCU to control the first protection circuit to be turned on or off.
In one embodiment of the application, the temperature control device further comprises a TEC controller, wherein the input end of the TEC controller is connected with the control signal output module of the MCU, the output end of the TEC controller is connected with the temperature controller module of the electroabsorption modulation laser, and the TEC controller is used for receiving a fourth control signal output by the MCU, converting the fourth control signal into a voltage signal and transmitting the voltage signal to the temperature controller module so as to control the working temperature of the electroabsorption modulation laser.
In one embodiment of the present application, a second protection circuit is further included, including:
the first port of the third resistor is connected with the output end of the TEC controller, and the second port of the third resistor is connected with the temperature controller module;
and the source electrode of the third transistor is connected with the first port of the third resistor, the drain electrode of the third transistor is connected with the MCU, the third transistor is grounded through a fourth resistor, and the grid electrode of the third transistor is connected with the second port of the third resistor through a second switch.
In one embodiment of the present application, the second protection circuit further includes a fourth transistor, a source of which is connected to the second port of the third resistor, a drain of which is connected to the base of the third transistor, and a gate of which is connected to the MCU, for receiving a fifth control signal output from the MCU to control the second protection circuit to be turned on or off.
The application also provides a debugging method of the electroabsorption modulation laser, which is applied to the debugging system of the electroabsorption modulation laser and comprises the following steps:
s10: the MCU outputs a first control signal to a negative pressure control module, the negative pressure control module converts the first control signal into a negative pressure signal and transmits the negative pressure signal to an electroabsorption modulator module of the electroabsorption modulation laser, and EAM negative pressure of the electroabsorption modulation laser is controlled;
s20: the MCU outputs a continuously increased second control signal to a driving module, the driving module converts the second control signal into a current signal and transmits the current signal to a DFB laser module of the electroabsorption modulation laser, and the current of the electroabsorption modulation laser is controlled;
s30: the MCU monitors the output power and other indexes of the electroabsorption modulation laser in real time, and compares the output power with a target power value;
s40: if the output power is greater than or equal to the target power value, taking the current first control signal as a reference control signal, judging whether other indexes are all greater than or equal to corresponding target values by the MCU, and if so, ending debugging; if not, the first control signal is increased and the step S10 is executed in a return mode;
s50: if the output power is smaller than the target power value, reducing a first control signal and returning to execute the step S10; wherein the reduced first control signal is not less than the reference control signal.
In one embodiment of the present application, step S30 includes:
the MCU outputs a third control signal to the grid electrode of the second transistor, and monitors the collector voltage of the first transistor in real time;
when the collector voltage of the first transistor increases, the MCU compares the output power of the electroabsorption modulated laser with a target power value.
In one embodiment of the present application, step S10 further includes: the MCU outputs a fourth control signal to the TEC controller, and the TEC controller converts the fourth control signal into a voltage signal and transmits the voltage signal to a temperature controller module of the electroabsorption modulation laser so as to control the working temperature of the electroabsorption modulation laser.
In one embodiment of the present application, further comprising: the MCU outputs a fifth control signal to the grid electrode of the fourth transistor, monitors the drain voltage of the third transistor in real time, and reduces the fourth control signal when the drain voltage of the third transistor increases.
The debugging system of the electric absorption modulation laser provided by the application is characterized in that a control signal output module of an MCU outputs a first control signal to a negative pressure control module so as to control the EAM negative pressure of the electric absorption modulation laser, and under the current EAM negative pressure, the control signal output module outputs a second control signal which is continuously increased to a driving module so as to control the current of the electric absorption modulation laser; receiving the output power and other indexes of the electroabsorption modulated laser by a parameter receiving module of the MCU, and comparing the output power with the target power value and the other indexes with the corresponding target values by a parameter comparing module; when the output power is successfully debugged and other indexes are not successfully debugged, taking the current first control signal as a reference control signal and reducing EAM negative pressure by increasing the first control signal; when the output power is not successfully debugged, increasing the EAM negative pressure by reducing the first control signal; the reduced first control signal is not smaller than the reference control signal, so that the debugging range of EAM negative pressure is continuously reduced.
The debugging system of the electroabsorption modulation laser provided by the application determines the debugging direction of the EAM negative pressure through the output power of the electroabsorption modulation laser, takes the first control signal as the reference control signal when the output power is successfully debugged, continuously reduces the debugging range of the EAM negative pressure, and improves the debugging efficiency of the electroabsorption modulation laser.
Drawings
In order that the application may be more readily understood, a more particular description of the application will be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings, in which
FIG. 1 is a schematic diagram of a debug system of an electro-absorption modulated laser according to the present application;
FIG. 2 is a schematic diagram of a first protection circuit according to the present application;
FIG. 3 is a schematic diagram of a second first protection circuit according to the present application;
FIG. 4 is a schematic diagram of a third first protection circuit according to the present application;
FIG. 5 is a schematic diagram of another system for tuning an electro-absorption modulated laser according to the present application;
FIG. 6 is a schematic diagram of a second protection circuit according to the present application;
FIG. 7 is a schematic diagram of a second protection circuit according to the present application;
FIG. 8 is a schematic diagram of a third second protection circuit according to the present application;
fig. 9 is a flowchart of a method for debugging an electroabsorption modulated laser according to the present application.
Detailed Description
The present application will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the application and practice it.
Example 1
Referring to fig. 1, the debug system of the electroabsorption modulated laser provided by the present application includes:
an MCU, comprising:
and the control signal output module is used for outputting the first control signal and the second control signal which is continuously increased.
In particular, the initial first control signal may be determined from the eye diagram quality of the electroabsorption modulated laser; the range of the second control signal may be determined from a current threshold of the electroabsorption modulated laser.
And the parameter receiving module is used for receiving the output power and other indexes of the electroabsorption modulation laser transmitted by the external machine station.
Specifically, the external machine is used for measuring the output power and other indexes of the electroabsorption modulation laser, and transmitting the measured output power and other indexes to the MCU through the I2C protocol.
Other indicators here include extinction ratio of the electroabsorption modulated laser, rise time of eye pattern, etc.
And the parameter comparison module is used for comparing the output power with the magnitude of the target power value and the magnitude of other indexes and corresponding target values.
The parameter adjustment module is used for taking the current first control signal as a reference signal and increasing the first control signal when the output power is greater than or equal to the target power value and other indexes are not all greater than or equal to the corresponding target values; when the output power is less than the target power value, the first control signal is reduced,
wherein the reduced first control signal is not less than the reference control signal.
And the input end of the negative pressure control module is connected with the control signal output module of the MCU, and the output end of the negative pressure control module is connected with the electroabsorption modulator module of the electroabsorption modulation laser and is used for converting the first control signal into a negative pressure signal and transmitting the negative pressure signal to the electroabsorption modulator module so as to control the EAM negative pressure of the electroabsorption modulation laser.
In particular, the negative pressure control module may be a negative pressure circuit or a negative pressure chip.
And the input end of the driving module is connected with the control signal output module of the MCU, and the output end of the driving module is connected with the DFB laser module of the electroabsorption modulation laser and is used for converting the second control signal into a current signal and transmitting the current signal to the DFB laser module so as to control the current of the electroabsorption modulation laser.
When the electroabsorption modulation laser is debugged, the MCU outputs a first control signal to stabilize the EAM negative pressure of the laser at an initial value, then outputs a second control signal which is continuously increased to the driving module, and receives the output power and other indexes of the laser transmitted by an external machine in real time along with the gradual increase of the current of the laser, and compares the output power with a target power value. When the output power is larger than or equal to the target power value, the output power of the electric absorption modulation laser is successfully debugged, the MCU takes the current first control signal as a reference control signal, judges whether other indexes are successfully debugged, and if the other indexes are successfully debugged, the electric absorption modulation laser is finished; if all other indexes are not successfully debugged, the first control signal is required to be increased to reduce the EAM negative pressure of the electroabsorption modulation laser so as to debug the other indexes to reach corresponding target values; if the output power is smaller than the target power value, the first control signal needs to be reduced to increase the EAM negative pressure so that the output power reaches the target power value.
According to the application, an output power debugging result is used as a reference for adjusting the EAM negative pressure, and after the output power is successfully debugged, other indexes can be successfully debugged by reducing the EAM negative pressure; if the output power debugging fails, increasing the EAM negative pressure to enable the output power to reach a target power value; in the whole debugging process, each time the output power is successfully debugged, a new reference control signal is generated, so that the debugging range of EAM negative pressure is reduced, and the debugging efficiency of the electroabsorption modulation laser is improved.
Optionally, the present application further includes a first protection circuit, as shown in fig. 2, including:
first resistor R 1 The first port of the first-type laser is connected with the output end of the driving module, and the second port of the first-type laser is connected with the DFB laser module;
first transistor Q 1 The emitter is connected with the first port of the first resistor, the collector is connected with the MCU, and the second resistor R 2 The base of the first resistor is connected with the second port of the first resistor through the first switch.
Specifically, in this embodiment, the first transistor is a PNP transistor, when the first switch is turned on, the first protection circuit is turned on, and as the second control signal increases, the current signal output by the driving module also increases gradually, and when the voltage difference between the base and the emitter of the first transistor is greater than the turn-on voltage of the first transistor, the first transistor is turned on, and a part of current flows to the second resistor through the first transistor, so that the electric absorption modulated laser is prevented from being damaged by a large current.
For example, if the on-voltage between the base and emitter of the first transistor is 0.6V, the maximum current that the electro-absorption modulated laser can flow through is I max First resistor R 1 Has a resistance value of 0.6/I max Therefore, when the current signal output by the driving module exceeds I max When the first transistor is turned on.
Optionally, the on-off of the first protection circuit may be controlled by setting a MOS transistor in addition to the first switch, as shown in fig. 3, where the first protection circuit further includes:
second transistor Q 2 The source electrode of the first resistor is connected with the second port of the first resistor, the drain electrode of the first resistor is connected with the base electrode of the first transistor, the grid electrode of the first resistor is connected with the MCU, and the third resistor is used for receiving a third control signal output by the MCU to control the first protection circuit to be turned on or turned off.
Alternatively, in other embodiments, the on or off of the second transistor may also be controlled by pulling VCC or GND down on the gate of the second transistor to control the on or off of the first protection circuit, as shown in fig. 4.
Optionally, as shown in fig. 5, the debug system of the electroabsorption modulated laser provided in this embodiment further includes:
and the input end of the TEC controller is connected with the control signal output module of the MCU, and the output end of the TEC controller is connected with the temperature controller module of the electroabsorption modulation laser and is used for receiving a fourth control signal output by the MCU and converting the fourth control signal into a voltage signal so as to control the working temperature of the electroabsorption modulation laser.
In the process of debugging and working an electroabsorption modulated laser, the working temperature of the electroabsorption modulated laser needs to be stabilized at the ambient temperature generally, so in the embodiment, a TEC controller is added in the debugging system of the electroabsorption modulated laser to control the working temperature of the electroabsorption modulated laser.
Optionally, based on the TEC controller controlling the operating temperature of the electroabsorption modulated laser, a corresponding second protection circuit is also provided in this embodiment, as shown in fig. 6, which includes:
third resistor R 3 The first port of the temperature controller is connected with the output end of the TEC controller, and the second port of the temperature controller is connected with the temperature controller module;
third transistor Q 3 The source electrode is connected with the first port of the third resistor, the drain electrode is connected with the MCU and passes through the fourth resistor R 4 And the grid electrode of the third resistor is connected with the second port of the third resistor through a second switch.
Specifically, the third transistor in this embodiment is a PMOS, when the second switch is turned on, the second protection circuit is turned on, and if the fourth control signal output by the MCU is too large, so that the voltage signal output by the TEC controller is too large, the third transistor is turned on, and a part of current flows through the third transistor to the fourth resistor, so that the electric absorption modulation laser is prevented from being damaged by a large current.
Optionally, the second protection circuit may further control on or off of the second protection circuit by setting a MOS transistor, as shown in fig. 7, where the second protection circuit further includes:
fourth transistor Q 4 The source electrode of the second resistor is connected with the second port of the third resistor, the drain electrode of the second resistor is connected with the grid electrode of the second transistor, the grid electrode of the second resistor is connected with the MCU, and the second resistor is used for receiving a fifth control signal output by the MCU to control the second protection circuit to be turned on or off.
Alternatively, in other embodiments, the fourth transistor may be controlled to be turned on or off by pulling VCC or GND down on the gate of the fourth transistor to control the second protection circuit to be turned on or off, as shown in fig. 8.
In the embodiment, a first protection circuit is added in a debugging system of the electroabsorption modulation laser, so that the electroabsorption modulation laser is prevented from being damaged by high current in the debugging process; and through setting up TEC controller and second protection circuit, can be through MCU output control signal debugging electroabsorption modulation laser's operating temperature to in the temperature debugging process, utilize the reposition of redundant personnel of second protection circuit to make electroabsorption modulation laser not damaged by the heavy current.
Example 2
Based on the above-mentioned debugging system of the electroabsorption modulated laser provided in embodiment 1, in this embodiment, a method for debugging an electroabsorption modulated laser is provided, as shown in fig. 9, which includes:
s10: the MCU outputs a first control signal to the negative pressure control module, and the negative pressure control module converts the first control signal into a negative pressure signal and transmits the negative pressure signal to the electroabsorption modulator module of the electroabsorption modulation laser to control the EAM negative pressure of the electroabsorption modulation laser.
S20: the MCU outputs a continuously increased second control signal to the driving module, the driving module converts the second control signal into a current signal and transmits the current signal to the DFB laser module of the electroabsorption modulation laser, and the current of the electroabsorption modulation laser is controlled.
S30: the MCU monitors the output power and other indexes of the electroabsorption modulation laser in real time, and compares the output power with a target power value.
S40: if the output power is greater than or equal to the target power value, the MCU judges whether other indexes are all greater than or equal to the target value by taking the current first control signal as a reference control signal, and if so, the debugging is finished; if not, the first control signal is increased and the process returns to step S10.
S50: if the output power is smaller than the target power value, reducing the first control signal and returning to execute the step S10; wherein the reduced first control signal is not less than the reference control signal.
Specifically, since the EAM negative pressure is a negative value, the first control signal increases, the negative pressure signal converted by the negative pressure control module based on the first control signal decreases, and accordingly, the EAM negative pressure value decreases; the first control signal decreases and the negative pressure control module increases based on the negative pressure signal converted by the first control signal, and accordingly, the EAM negative pressure value increases.
For example, if EAM negative pressure value is V 1 The current is I 1 When the output power is larger than or equal to the target power value, and other indexes do not all reach the corresponding target values, the first control signal is increased to reduce the EAM negative pressure value; if the reduced EAM negative pressure value is V 2 If the output power of the EAM negative voltage value does not have a corresponding current value to enable the output power of the EAM to reach the target power value, the first control signal is required to be reduced again to increase the EAM negative voltage value, the output power of the EAM laser is enabled to reach the target value first, and at the moment, the increased EAM negative voltage value is larger than V 2 Less than V 1 . Therefore, in the whole debugging process, whether the output power is debugged into a function can continuously reduce the debugging range of the EAM negative pressure so as to find out proper EAM negative pressure and current as soon as possible.
Specifically, in some embodiments of the present application, step S30 includes:
s300: the MCU outputs a third control signal to the grid electrode of the second transistor, and monitors the collector voltage of the first transistor in real time.
S301: when the collector voltage of the first transistor increases, the MCU compares the output power of the electroabsorption modulated laser with the target power value.
The MCU outputs a third control signal to the grid electrode of the second transistor, so that the second transistor is conducted, and correspondingly, the first protection circuit is conducted. As the second control signal increases, the current signal output by the driving module also gradually increases, and the first transistor in the first protection circuit is turned on. At this time, the MCU does not need to monitor and compare the output power of the electroabsorption modulation laser with the target power value in real time, but compares the output power of the electroabsorption modulation laser with the target power value again when the collector voltage of the first transistor is increased, so that the debugging process is simplified. This is because the first transistor turns on indicating that the current output by the driving module is larger, and the output power of the electroabsorption modulated laser is closer to the target power value.
Optionally, based on the TEC controller in embodiment 1, before step S10, the method further includes: the MCU outputs a fourth control signal to the TEC controller, and the TEC controller converts the fourth control signal into a voltage signal and transmits the voltage signal to a temperature controller module of the electroabsorption modulation laser so as to control the working temperature of the electroabsorption modulation laser.
The working temperature of the electroabsorption modulation laser can be stabilized at the ambient temperature through the TEC controller, so that the influence of the larger difference between the working temperature and the ambient temperature on the light emitting efficiency of the electroabsorption modulation laser is avoided.
Optionally, based on the second protection circuit in embodiment 1, in the process of debugging the operating temperature of the electroabsorption modulated laser, the method further includes: the MCU outputs a fifth control signal to the grid electrode of the fourth transistor, monitors the drain voltage of the third transistor in real time, and reduces the fourth control signal when the drain voltage of the third transistor increases.
The MCU outputs a fifth control signal to the grid electrode of the fourth transistor to enable the fourth transistor to be conducted, and correspondingly, the second protection circuit is conducted, if the fourth control signal is large to enable the third transistor in the second protection circuit to be conducted, the MCU needs to monitor the drain voltage of the third transistor in real time, and when the drain voltage of the third transistor is increased, the fourth control signal needs to be reduced to reduce the voltage signal output by the TEC controller, so that damage to the electroabsorption modulation laser is avoided.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present application will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the application.

Claims (10)

1. A debug system for an electroabsorption modulated laser, comprising:
an MCU, comprising:
the control signal output module is used for outputting a first control signal and a second control signal which is continuously increased;
the parameter receiving module is used for receiving the output power and other indexes of the electric absorption modulation laser transmitted by the external machine station;
the parameter comparison module is used for comparing the output power with the target power value and the other indexes with the corresponding target values;
the parameter adjustment module is used for taking the current first control signal as a reference signal and increasing the first control signal when the output power is greater than or equal to the target power value and the other indexes are not all greater than or equal to the corresponding target values; when the output power is smaller than the target power value, reducing a first control signal, wherein the reduced first control signal is not smaller than the reference control signal;
the input end of the negative pressure control module is connected with the control signal output module of the MCU, and the output end of the negative pressure control module is connected with the electroabsorption modulator module of the electroabsorption modulation laser and is used for converting a first control signal into a negative pressure signal and transmitting the negative pressure signal to the electroabsorption modulator module so as to control the EAM negative pressure of the electroabsorption modulation laser;
and the input end of the driving module is connected with the control signal output module of the MCU, and the output end of the driving module is connected with the DFB laser module of the electroabsorption modulation laser and is used for converting the second control signal into a current signal and transmitting the current signal to the DFB laser module so as to control the current of the electroabsorption modulation laser.
2. The tuning system of an electroabsorption modulated laser of claim 1, further comprising a first protection circuit comprising:
the first port of the first resistor is connected with the output end of the driving module, and the second port of the first resistor is connected with the DFB laser module;
and the emitter of the first transistor is connected with the first port of the first resistor, the collector of the first transistor is connected with the MCU, the first transistor is grounded through the second resistor, and the base of the first transistor is connected with the second port of the first resistor through the first switch.
3. The tuning system of the electro-absorption modulated laser according to claim 2, wherein the first protection circuit further comprises a second transistor, a source electrode of which is connected to the second port of the first resistor, a drain electrode of which is connected to the base electrode of the first transistor, and a gate electrode of which is connected to the MCU, for receiving a third control signal outputted from the MCU to control the first protection circuit to be turned on or off.
4. The system according to claim 1, further comprising a TEC controller, an input end of which is connected to the control signal output module of the MCU, and an output end of which is connected to the temperature controller module of the electroabsorption modulated laser, and configured to receive a fourth control signal output by the MCU, and convert the fourth control signal into a voltage signal, and transmit the voltage signal to the temperature controller module, so as to control an operating temperature of the electroabsorption modulated laser.
5. The tuning system of the electroabsorption modulated laser of claim 4, further comprising a second protection circuit comprising:
the first port of the third resistor is connected with the output end of the TEC controller, and the second port of the third resistor is connected with the temperature controller module;
and the source electrode of the third transistor is connected with the first port of the third resistor, the drain electrode of the third transistor is connected with the MCU, the third transistor is grounded through a fourth resistor, and the grid electrode of the third transistor is connected with the second port of the third resistor through a second switch.
6. The system according to claim 5, wherein the second protection circuit further comprises a fourth transistor, a source of which is connected to the second port of the third resistor, a drain of which is connected to the base of the third transistor, and a gate of which is connected to the MCU, for receiving a fifth control signal outputted from the MCU to control the second protection circuit to be turned on or off.
7. A method for tuning an electroabsorption modulated laser, wherein the method is applied to the tuning system of the electroabsorption modulated laser according to any one of claims 1 to 6, and comprises:
s10: the MCU outputs a first control signal to a negative pressure control module, the negative pressure control module converts the first control signal into a negative pressure signal and transmits the negative pressure signal to an electroabsorption modulator module of the electroabsorption modulation laser, and EAM negative pressure of the electroabsorption modulation laser is controlled;
s20: the MCU outputs a continuously increased second control signal to a driving module, the driving module converts the second control signal into a current signal and transmits the current signal to a DFB laser module of the electroabsorption modulation laser, and the current of the electroabsorption modulation laser is controlled;
s30: the MCU monitors the output power and other indexes of the electroabsorption modulation laser in real time, and compares the output power with a target power value;
s40: if the output power is greater than or equal to the target power value, taking the current first control signal as a reference control signal, judging whether other indexes are all greater than or equal to corresponding target values by the MCU, and if so, ending debugging; if not, the first control signal is increased and the step S10 is executed in a return mode;
s50: if the output power is smaller than the target power value, reducing a first control signal and returning to execute the step S10; wherein the reduced first control signal is not less than the reference control signal.
8. The method for tuning an electroabsorption modulated laser as defined in claim 7, wherein step S30 comprises:
the MCU outputs a third control signal to the grid electrode of the second transistor, and monitors the collector voltage of the first transistor in real time;
when the collector voltage of the first transistor increases, the MCU compares the output power of the electroabsorption modulated laser with a target power value.
9. The method for tuning an electroabsorption modulated laser as defined in claim 7, further comprising, prior to step S10: the MCU outputs a fourth control signal to the TEC controller, and the TEC controller converts the fourth control signal into a voltage signal and transmits the voltage signal to a temperature controller module of the electroabsorption modulation laser so as to control the working temperature of the electroabsorption modulation laser.
10. The method of tuning an electroabsorption modulated laser of claim 9, further comprising: the MCU outputs a fifth control signal to the grid electrode of the fourth transistor, monitors the drain voltage of the third transistor in real time, and reduces the fourth control signal when the drain voltage of the third transistor increases.
CN202311024874.6A 2023-08-15 2023-08-15 Debugging system and method for electroabsorption modulation laser Pending CN117096727A (en)

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