CN117091550B - Auxiliary positioning device for film thickness measurement - Google Patents
Auxiliary positioning device for film thickness measurement Download PDFInfo
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- CN117091550B CN117091550B CN202311351976.9A CN202311351976A CN117091550B CN 117091550 B CN117091550 B CN 117091550B CN 202311351976 A CN202311351976 A CN 202311351976A CN 117091550 B CN117091550 B CN 117091550B
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- 238000005259 measurement Methods 0.000 title claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 137
- 239000011248 coating agent Substances 0.000 claims abstract description 136
- 239000004065 semiconductor Substances 0.000 claims abstract description 116
- 238000001514 detection method Methods 0.000 claims abstract description 85
- 239000002184 metal Substances 0.000 claims abstract description 67
- 230000000694 effects Effects 0.000 claims abstract description 43
- 210000000078 claw Anatomy 0.000 claims abstract description 42
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 238000007747 plating Methods 0.000 claims description 46
- 239000010410 layer Substances 0.000 claims description 26
- 239000011247 coating layer Substances 0.000 claims description 24
- 238000012937 correction Methods 0.000 claims description 20
- 239000002994 raw material Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 13
- 230000001105 regulatory effect Effects 0.000 abstract description 4
- 238000012544 monitoring process Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 25
- 238000001228 spectrum Methods 0.000 description 7
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
- B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to the technical field of semiconductor chips, in particular to an auxiliary positioning device for film thickness measurement. Comprising the following steps: a base; positioning device, comprising: a pressing claw, a clamping groove and a rotary lifting device; a metal film deposition device; a detection unit; and the central control unit: judging whether the thickness of the metal coating on the surface of the semiconductor chip meets the preset standard according to the monitoring data of the detection unit, and detecting the thickness of the coating at a plurality of detection points to carry out secondary judgment when the thickness does not meet the preset standard, or adjusting the pressure of the pressing claw to a corresponding value. Compared with the prior art, the method has the beneficial effects that by rapidly completing the judgment of whether the coating effect of the semiconductor chip meets the preset standard, when the preset standard is not met, the secondary judgment is carried out according to different detection point position numbers and rotation angles or the pressure of the pressing claw is regulated to the corresponding value, so that the detection precision of the surface metal coating of the semiconductor chip is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor chips, in particular to an auxiliary positioning device for film thickness measurement.
Background
Chinese patent publication No.: CN101865641B discloses a method and apparatus for measuring the thickness of a semiconductor thin film, comprising: measuring the actual reflection spectrum of the semiconductor film to be measured; determining an actual reflection curve segment corresponding to a transparent region in an actual reflection spectrum; obtaining simulated reflection curve segments corresponding to transparent areas in a plurality of simulated reflection spectrums, wherein the simulated reflection spectrums comprise reflection spectrums of film samples with the same refractive index as the semiconductor film to be tested under different thicknesses; fitting the actual reflection curve segment with a plurality of simulated reflection curve segments; the thickness corresponding to the simulated reflection spectrum with the smallest fitting error is measured to be the thickness of the semiconductor film to be measured, so that the method and the device for measuring the thickness of the semiconductor film have the following problems: the film thickness can be measured entirely by analyzing the spectrum, and the film thickness in a local area or a plurality of points cannot be detected, so that the problem of insufficient detection accuracy exists.
Disclosure of Invention
Therefore, the invention provides an auxiliary positioning device for film thickness measurement, which is used for solving the problem of insufficient detection precision in the prior art.
In order to achieve the above object, the present invention provides an auxiliary positioning device for film thickness measurement. Comprising the following steps:
a base;
the positioning device is connected with the base body and comprises a plurality of pressing claws for fixing the semiconductor chip, a clamping groove for fixing the chip and a rotary lifting device capable of lifting and rotating, wherein the pressing claws are driven to separate from the chip by lifting and rotating of the rotary lifting device and drive the chip in the clamping groove to rotate;
the metal film deposition device is arranged at a corresponding position of the matrix and is used for performing metal film deposition operation on the semiconductor chip fixed on the positioning device;
the detection unit is arranged at a position corresponding to the substrate and used for detecting the thickness of the metal film of the semiconductor chip;
the central control unit is connected with the positioning device and the detection unit and is used for judging whether the thickness of the metal coating on the surface of the semiconductor chip meets the preset standard according to the detection data of the detection unit, detecting the thickness of the metal coating on the plurality of detection points according to the number of detection points preset in the central control unit and the rotation angle to judge whether the thickness of the metal coating meets the preset standard or not for the second time when the thickness of the metal coating does not meet the preset standard, or adjusting the pressure of the pressing claw to a corresponding value according to the detection data of the detection unit.
Further, when the central control unit judges that the coating effect of the semiconductor chip does not meet the preset standard, the difference between the first-stage preset coating thickness preset in the central control unit and the metal coating layer thickness on the surface of the semiconductor chip is recorded as a coating thickness difference, and a plurality of regulation modes aiming at the pressure of the pressing claw are arranged according to the coating thickness difference, wherein the regulation amplitudes of the regulation modes aiming at the pressure of the pressing claw are different.
Further, after the central control unit completes the determination of the pressure regulation mode of the pressing claw, a plurality of correction modes aiming at the pressure of the pressing claw are arranged according to the layer thickness of the metal coating of the semiconductor chip, and the correction amplitudes of the correction modes aiming at the pressure of the pressing claw are different.
Further, after finishing the correction of the pressure of the pressing claw and performing metal coating on the semiconductor chip according to the preset coating time, the central control unit controls the detection unit to re-detect the thickness of the metal coating of the semiconductor chip, if the re-detection judges that the coating effect of the semiconductor chip does not meet the preset standard, the central control unit marks the difference between the first-stage preset coating thickness and the thickness after coating completion as a thickness difference, a plurality of determination modes aiming at the coating raw material addition amount are arranged according to the thickness difference, and the determination modes are different aiming at the raw material addition amount.
Further, when the central control unit judges that the coating effect on the surface of the semiconductor chip does not meet the preset standard, the central control unit controls the rotary lifting device to carry out multi-point detection on the surface coating thickness of the semiconductor chip according to the preset rotation angle and the preset detection point number preset in the central control unit, the variance value of the coating thickness of each detection point is recorded as a coating thickness variance value, whether the coating effect on the semiconductor chip meets the preset standard or not is judged for the second time according to the coating thickness variance value, if the central control unit judges that the coating effect on the semiconductor chip meets the preset standard, the average value of the coating layer thicknesses of each detection point is calculated, and whether the preset standard is met or not is judged according to the average value of the coating layer thicknesses of each detection point, or the central control unit judges that the coating effect on the semiconductor chip does not meet the preset standard, the surface of the semiconductor chip is uneven, and the central control unit adjusts the primary preset coating thickness and the secondary preset coating thickness in the central control unit to the corresponding value according to the coating thickness variance value.
Further, when the central control unit secondarily judges that the coating effect of the semiconductor chip meets the preset standard, a judging mode of whether the coating effect of the surface of the semiconductor chip meets the preset standard is determined according to the average value of the coating layers of all the detection points, or when the central control unit judges that the coating effect of the surface of the semiconductor chip does not meet the preset standard, a raw material shortage notification is sent out.
Further, when the secondary judgment of the coating effect of the semiconductor chip does not meet the preset standard, the central control unit marks the difference value between the coating thickness variance value and the preset coating thickness variance value preset in the central control unit as a variance difference value, a plurality of standard adjustment modes aiming at the primary preset coating thickness and the secondary preset coating thickness are arranged according to the variance difference value, and the adjustment modes are different in adjustment amplitude aiming at the primary preset coating thickness and the secondary preset coating thickness.
Further, when the central control unit preliminarily judges that the plating effect of the surface of the semiconductor chip does not meet the preset standard, the difference between the thickness of the secondary preset plating layer and the thickness of the metal plating layer of the surface of the semiconductor chip is recorded as a thickness difference, a plurality of determination modes aiming at the number of detection points and the rotation angle of the rotation lifting device are arranged according to the thickness difference, and the number of the detection points and the rotation angle of the rotation lifting device are different in each determination mode.
Further, the central control unit stops coating when judging that the coating thickness of the semiconductor chip reaches the preset thickness preset in the central control unit.
Compared with the prior art, the method has the beneficial effects that after the semiconductor chip is placed at the corresponding position and the metal coating is carried out for a preset time, the thickness of the metal coating on the semiconductor surface is detected and compared with the preset standard, so that whether the coating effect of the semiconductor chip meets the preset standard or not is rapidly finished, when the preset standard is not met, secondary judgment is carried out according to different detection point positions and rotation angles or the pressure of the pressing claw is regulated to the corresponding value, and the corresponding parameter is rapidly regulated to the corresponding value, so that the detection precision of the surface metal coating of the semiconductor chip is further improved.
Further, the method and the device can quickly judge whether the preset standard is met or not by detecting the thickness of the metal coating layer of the preset detection point position corresponding to the surface of the chip, and quickly determine the corresponding processing mode according to the judging result, so that when the preset standard is not met, the corresponding parameters are quickly adjusted to the corresponding values or whether the preset standard is met or not is judged secondarily according to the monitoring data of a plurality of point positions, and the detection precision of the surface metal coating layer of the semiconductor chip is further improved.
Furthermore, the invention calculates the thickness difference of the coating and compares the thickness difference with the preset standard to quickly determine the adjusting mode aiming at the pressure of the pressing claw, thereby quickly adjusting the pressure to the corresponding value, preventing the relative displacement between the semiconductor chip and the clamping groove in the surface metal coating process of the semiconductor chip, and further improving the detection precision when the surface metal coating is carried out on the semiconductor chip.
Further, the pressure is corrected according to the thickness of the semiconductor chip, so that the semiconductor is prevented from being cracked due to overlarge pressure and overlarge thinness in the pressure adjusting process, and the safety of the semiconductor chip is ensured.
Further, the method and the device can quickly determine the addition amount of the coating raw material by calculating the thickness difference and comparing the thickness difference with the preset standard, so that the coating raw material is quickly added, and the coating effect is ensured.
Further, by calculating the thickness difference of the coating, the corresponding secondary judgment mode can be rapidly determined according to the preset standard, so that whether the coating effect of the semiconductor chip meets the preset standard or not is rapidly judged secondarily, and the detection precision of the surface metal coating of the semiconductor chip is further improved.
Further, whether the plating effect on the surface of the semiconductor chip meets the preset standard or not is further judged by calculating the average value, when the preset standard is not met, a raw material shortage notification is sent out, and when the preset standard is met, corresponding parameters are kept unchanged and metal plating is continued, so that the detection precision of the surface metal plating of the semiconductor chip is further improved.
Furthermore, the variance difference is calculated and compared with the preset standard, so that the adjustment mode aiming at the judging standard is completed rapidly, misjudgment caused by the difference of the surface thickness is avoided by widening the evaluation interval, and the detection precision of the semiconductor chip when the surface metal coating is carried out is further improved.
Further, the method for determining the number of the detection points and the rotation angle of the rotation lifting device by calculating the thickness difference is used for selecting the corresponding number of the detection points according to actual conditions, so that the monitoring data of all the detection points can be comprehensively analyzed by adding the calibration point positions and the detection points with different angles, and the detection precision of the surface metal coating of the semiconductor chip is further improved.
Drawings
FIG. 1 is a diagram showing a construction of an auxiliary positioning device for film thickness measurement according to the present invention;
FIG. 2 is a decision flow chart of a decision mode according to the present invention;
FIG. 3 is a flow chart of the adjustment mode determination according to the present invention;
FIG. 4 is a flowchart of the correction mode determination according to the present invention;
wherein: 1-base body, 2-positioner, 21-press claw, 22-draw-in groove, 23-rotation elevating gear, 3-metal film deposition equipment, 4-detecting element, 5-well accuse unit.
Detailed Description
In order that the objects and advantages of the invention will become more apparent, the invention will be further described with reference to the following examples; it should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are merely for explaining the technical principles of the present invention, and are not intended to limit the scope of the present invention.
It should be noted that, in the description of the present invention, terms such as "upper," "lower," "left," "right," "inner," "outer," and the like indicate directions or positional relationships based on the directions or positional relationships shown in the drawings, which are merely for convenience of description, and do not indicate or imply that the apparatus or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, it should be noted that, in the description of the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those skilled in the art according to the specific circumstances.
Referring to fig. 1, the structure diagram of the auxiliary positioning device for film thickness measurement according to the present invention includes:
a base 1;
the positioning device 2 is connected with the base body and comprises a plurality of pressing claws 21 used for fixing chips, a clamping groove 22 used for fixing semiconductor chips and a rotary lifting device 23 capable of lifting and rotating, wherein the pressing claws are driven by the lifting and rotation of the rotary lifting device to separate from the chips and drive the chips in the clamping groove to rotate;
a metal film deposition device 3 connected to the base body for performing a metal film deposition operation on the semiconductor chip fixed on the positioning device;
a detection unit 4 connected to the base body for detecting the thickness of the metal thin film of the semiconductor chip;
and the central control unit 5 is connected with the positioning device and the detection unit and is used for judging whether the thickness of the metal coating on the surface of the semiconductor chip meets the preset standard according to the detection data of the detection unit, detecting the thickness of the metal coating at a plurality of detection points according to the number of the detection points preset in the central control unit and the rotation angle to judge whether the thickness of the metal coating meets the preset standard or not for carrying out secondary judgment according to the number of the detection points preset in the central control unit when the thickness of the metal coating is judged not to meet the preset standard, or regulating the pressure of the pressing claw to a corresponding value according to the detection data of the detection unit.
After the semiconductor chip is placed into the clamping groove 22 of the semiconductor chip by an operator, the central control unit controls the rotary lifting device 23 to lift to a corresponding position, the pressing claw 21 is connected with the substrate 1 through a sliding rail (not shown in a sliding rail diagram), the pressing claw 21 fixes the semiconductor chip in the clamping groove 22 according to preset pressure through the sliding rail, after the pressing claw 21 is fixed, the central control unit 5 controls the metal film deposition device 3 to start to perform surface metal coating on the semiconductor chip according to preset parameters in the central control unit 5, the rotary lifting device 23 drives the clamping groove 22 to rotate and lift so that coating materials uniformly cover the surface of the semiconductor chip, after the metal film deposition device 3 operates for preset coating time, the central control unit controls the detection unit 4 to detect the metal coating layer thickness of a preset detection point corresponding to the surface of the semiconductor chip, so that whether the coating effect of the semiconductor chip meets preset standards or not is judged, when judging that the preset standards are not met, the corresponding parameters are adjusted to corresponding values according to judgment results, the metal coating is controlled by the central control unit 3 to continue to perform metal coating according to preset parameters, and when judging that the preset standards are met, the relevant preset parameters are kept not met, and a complete coating operation link is completed.
Please refer to fig. 2, which is a decision flow chart of the decision mode according to the present invention, wherein the central control unit controls the detection unit to detect the metal coating layer thickness of the preset detection point corresponding to the chip surface and determine whether the coating effect on the semiconductor chip meets the preset standard according to the metal coating layer thickness of the semiconductor chip surface under the first preset condition, wherein:
the first judging mode is that the central control unit judges that the plating effect of the surface of the semiconductor chip does not meet the preset standard because the pressing claw is not pressed, and the central control unit adjusts the pressure of the pressing claw on the semiconductor chip to a corresponding value according to the thickness of the metal plating layer; the first judging mode meets the condition that the thickness of a metal coating layer on the surface of the semiconductor chip is smaller than 10 mu m of a first-level preset coating layer preset in the central control unit;
the second judging mode is that the central control unit preliminarily judges that the coating effect of the surface of the semiconductor chip does not meet the preset standard, the central control unit controls the rotary lifting device to carry out multi-point detection on the coating thickness of the surface of the semiconductor chip according to the preset rotation angle and the preset detection point number preset in the central control unit, and the secondary judgment is carried out on whether the coating effect of the semiconductor chip meets the preset standard according to the coating thickness of each detection point; the second judging mode meets the condition that the thickness of a metal coating layer on the surface of the semiconductor chip is larger than or equal to the thickness of the first-stage preset coating layer and smaller than or equal to the thickness of a second-stage preset coating layer preset in the central control unit by 20 mu m;
the third judging mode is that the central control unit judges that the plating effect of the surface of the semiconductor chip meets the preset standard; the third judging mode meets the condition that the thickness of a metal coating layer on the surface of the semiconductor chip is larger than the thickness of the second-level preset coating layer;
the first preset condition is that after the central control unit controls the positioning device to fix the semiconductor chip according to the pressure of 50 megapascals of the pressing claws preset in the central control unit, metal coating is carried out on the semiconductor chip according to the preset coating time preset in the central control unit for 10 minutes.
Referring to fig. 3, which is a flowchart illustrating a determination method of the adjustment method according to the present invention, the central control unit records a difference between the first-level preset plating thickness and the metal plating layer thickness on the surface of the semiconductor chip as a plating thickness difference and determines an adjustment method for the pressing jaw pressure according to the plating thickness difference in the first determination method, wherein:
the first adjusting mode is that the central control unit adjusts the pressure of the pressing claw to a corresponding value by using a first adjusting coefficient 1.05; the first adjusting mode meets the condition that the thickness difference of the plating layer is smaller than the first-level preset plating layer thickness difference of 2.5 mu m preset in the central control unit;
the second adjusting mode is that the central control unit adjusts the pressure of the pressing claw to a corresponding value by using a second adjusting coefficient 1.10; the second adjustment mode meets the condition that the thickness difference of the plating layer is larger than or equal to the first-level preset plating layer thickness difference and smaller than or equal to the second-level preset plating layer thickness difference preset in the central control unit by 5 mu m;
the third adjusting mode is that the central control unit adjusts the pressure of the pressing claw to a corresponding value by using a third adjusting coefficient 1.15; the third adjusting mode meets the condition that the thickness difference of the plating layer is larger than the second-level preset plating layer thickness difference.
Referring to fig. 4, which is a flowchart illustrating a method for determining the correction mode according to the present invention, the central control unit determines the correction mode for the pressure of the pressing claw according to the thickness of the semiconductor chip to be plated under the second preset condition, wherein:
the first correction mode is that the central control unit uses a first correction coefficient 0.97 to adjust the pressure of the pressing claw to a corresponding value; the first correction mode meets the condition that the thickness of the semiconductor chip to be plated is smaller than a first-level preset thickness of 200 nanometers preset in the central control unit;
the second correction mode is that the central control unit uses a second correction coefficient of 0.98 to adjust the pressure of the pressing claw to a corresponding value; the second correction mode meets the requirement that the thickness of the semiconductor chip to be plated is larger than or equal to the first-level preset thickness and smaller than or equal to 350 nanometers of the second-level preset thickness preset in the central control unit;
the third correction mode is that the central control unit uses a third correction coefficient of 0.99 to adjust the pressure of the pressing claw to a corresponding value; the third correction mode meets the condition that the thickness of the semiconductor chip to be plated is larger than the second-level preset thickness;
the second preset condition is that the central control unit completes the determination of the pressure regulation mode of the pressing claw.
Specifically, the central control unit judges that the coating effect of the semiconductor chip does not meet a preset standard under a third preset condition, the central control unit marks the difference between the first-level preset coating thickness and the thickness after coating completion as a thickness difference, and determines a determination mode for the coating raw material addition according to the thickness difference, wherein:
the first determination mode is that the central control unit adds a coating raw material to the metal film deposition device by using a first raw material adding amount; the first determination mode meets the condition that the thickness difference is smaller than a first-level preset thickness difference value preset in the central control unit by 2.5 mu m;
the second determination mode is that the central control unit uses a second raw material adding amount to add a coating raw material to the metal film deposition device; the second determination mode meets the condition that the thickness difference is larger than or equal to the first-level preset thickness difference and smaller than or equal to a second-level preset thickness difference preset in the central control unit by 5 mu m;
the third determination mode is that the central control unit adds a plating raw material to the metal film deposition device by using a third raw material adding amount; the third determination mode satisfies that the thickness difference is greater than the second-level preset thickness difference by 5 μm.
And the third preset condition is that the central control unit finishes correcting the pressure of the pressing claw, and controls the detection unit to re-detect the thickness of the metal coating layer of the semiconductor chip after the metal coating is carried out on the semiconductor chip according to the preset coating time.
Specifically, the central control unit records the variance value of the coating thickness of each detection point as a coating thickness variance value in the second determination mode, and determines whether the coating effect of the semiconductor chip meets a preset standard according to the coating thickness variance value to perform secondary determination, wherein:
the first secondary judgment mode is that the central control unit judges that the coating effect of the semiconductor chip meets a preset standard, the central control unit calculates the average value of the coating layer thicknesses of all detection points, and judges whether the coating effect of the semiconductor chip meets the preset standard according to the average value of the coating layer thicknesses of all the detection points; the first secondary judgment mode meets the condition that the coating thickness variance value is smaller than or equal to a preset coating thickness variance value 200 preset in the central control unit;
the second secondary judgment mode is that the central control unit judges that the coating effect of the semiconductor chip does not meet a preset standard, the central control unit judges that the surface of the semiconductor chip is uneven, and the central control unit adjusts the first-level preset coating thickness and the second-level preset coating thickness to corresponding values according to the coating thickness variance value; the second secondary judgment mode satisfies that the coating thickness variance value is larger than the preset coating thickness variance value 200.
Specifically, the central control unit calculates an average value of the coating layer thicknesses of the detection points in the first secondary judgment mode, and determines a judgment mode of whether the coating effect on the surface of the semiconductor chip meets a preset standard according to the average value of the coating layer thicknesses of the detection points, wherein:
the first judging mode is that the central control unit judges that the plating effect of the surface of the semiconductor chip meets the preset standard; the first judging mode meets the condition that the plating effect of the surface of the semiconductor chip meets the preset standard; the first judging mode meets the condition that the average value of the coating layer thickness of each detection point is larger than the preset average value of 19 mu m preset in the central control unit;
the second judging mode is that the central control unit judges that the plating effect of the surface of the semiconductor chip does not meet a preset standard and sends out a raw material shortage notification; the first judging mode meets the condition that the plating effect of the surface of the semiconductor chip meets the preset standard; and the second judging mode meets the condition that the average value of the coating layer thicknesses of all the detection points is smaller than or equal to the preset average value.
Specifically, the central control unit marks the difference between the coating thickness variance value and the preset coating thickness variance value as a variance difference value in the second secondary judgment mode, and determines a standard adjustment mode for the first-stage preset coating thickness and the second-stage preset coating thickness according to the variance difference value, wherein:
the first standard adjusting mode is that the central control unit adjusts the thickness of the primary preset plating layer and the thickness of the secondary preset plating layer to corresponding values by using a first adjusting coefficient of 0.75; the first adjustment mode meets the condition that the variance difference is smaller than a first-level preset variance difference 50 preset in the central control unit;
the second standard adjusting mode is that the central control unit adjusts the thickness of the primary preset plating layer and the thickness of the secondary preset plating layer to corresponding values by using a second adjusting coefficient of 0.85; the second adjustment mode meets the condition that the variance difference is larger than or equal to the first-level preset variance difference and smaller than or equal to a second-level preset variance difference 100 preset in the central control unit;
the third standard adjusting mode is that the central control unit adjusts the thickness of the primary preset plating layer and the thickness of the secondary preset plating layer to corresponding values by using a third adjusting coefficient of 0.95; the third adjustment mode satisfies that the variance difference is greater than the second-level preset variance difference 100.
Specifically, the central control unit records the difference between the thickness of the secondary preset plating layer and the thickness of the metal plating layer on the surface of the semiconductor chip as a thickness difference in the second determination mode, and determines the number of detection points and the determination mode of the rotation angle of the rotation lifting device according to the thickness difference, wherein:
the first determining mode is that the central control unit selects corresponding detection points by using a first preset number 10 and a first rotation angle 36 degrees; the first determination mode meets the condition that the thickness difference is 7.5 mu m larger than a first-level preset thickness difference preset in the central control unit;
a second determining mode is that the central control unit selects corresponding detection points by using a second preset number 8 and a second rotation angle of 45 degrees; the second determination mode meets the conditions that the thickness difference is smaller than or equal to the first-level preset thickness difference and larger than or equal to a second-level preset thickness difference preset in the central control unit by 4.5 mu m;
a third determining mode is that the central control unit selects corresponding detection points by using a third preset number 4 and a third rotation angle 90 degrees; the third determination mode satisfies that the thickness difference is smaller than the second-level preset thickness difference.
Specifically, the central control unit stops coating when judging that the thickness of the coating film of the semiconductor chip reaches 50 μm of the preset thickness preset in the central control unit.
Thus far, the technical solution of the present invention has been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of protection of the present invention is not limited to these specific embodiments. Equivalent modifications and substitutions for related technical features may be made by those skilled in the art without departing from the principles of the present invention, and such modifications and substitutions will be within the scope of the present invention.
The foregoing description is only of the preferred embodiments of the invention and is not intended to limit the invention; various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. An auxiliary positioning device for film thickness measurement, comprising:
a base;
the positioning device is connected with the base body and comprises a plurality of pressing claws for fixing the chip, a clamping groove for fixing the semiconductor chip and a rotary lifting device capable of lifting and rotating, wherein the pressing claws are driven to separate from the chip by lifting and rotating of the rotary lifting device and drive the chip in the clamping groove to rotate;
the metal film deposition device is arranged at a corresponding position of the matrix and is used for performing metal film deposition operation on the semiconductor chip fixed on the positioning device;
the detection unit is arranged at a position corresponding to the substrate and used for detecting the thickness of the metal film of the semiconductor chip;
the central control unit is connected with the positioning device and the detection unit and is used for judging whether the thickness of the metal coating on the surface of the semiconductor chip meets the preset standard according to the detection data of the detection unit, detecting the thickness of the metal coating at a plurality of detection points according to the number of the detection points preset in the central control unit and the rotation angle to judge whether the thickness of the metal coating meets the preset standard or not for the second time when the thickness of the metal coating does not meet the preset standard, or adjusting the pressure of the pressing claw to a corresponding value according to the detection data of the detection unit;
when the plating effect of the semiconductor chip is judged to not meet the preset standard, the central control unit marks the difference between the first-level preset plating thickness preset in the central control unit and the metal plating layer thickness on the surface of the semiconductor chip as a plating thickness difference, and a plurality of regulation modes aiming at the pressure of the pressing claw are arranged according to the plating thickness difference, wherein the regulation amplitudes of the regulation modes aiming at the pressure of the pressing claw are different.
2. The auxiliary positioning device for film thickness measurement according to claim 1, wherein after the central control unit completes the determination of the pressure adjustment modes of the pressing claws, a plurality of correction modes for the pressure of the pressing claws are arranged according to the layer thickness of the metal plating layer of the semiconductor chip, and the correction amplitudes of the correction modes for the pressure of the pressing claws are different.
3. The auxiliary positioning device for film thickness measurement according to claim 2, wherein the central control unit controls the detection unit to re-detect the thickness of the metal coating layer of the semiconductor chip after finishing the correction of the pressure of the pressing claw and performing metal coating on the semiconductor chip according to the preset coating time, and if the re-detection judges that the coating effect of the semiconductor chip does not meet the preset standard, the central control unit marks the difference between the first-stage preset coating thickness and the thickness after coating completion as a thickness difference, a plurality of determination modes aiming at the coating raw material addition amount are provided according to the thickness difference, and the determination modes are different aiming at the raw material addition amount.
4. The auxiliary positioning device for film thickness measurement according to claim 3, wherein when the central control unit determines that the coating effect of the surface of the semiconductor chip does not meet the preset standard, the central control unit controls the rotary lifting device to perform multi-point detection on the surface coating thickness of the semiconductor chip according to the preset rotation angle and the preset detection point number preset in the central control unit, marks the variance value of the coating thickness of each detection point as a coating thickness variance value, determines whether the coating effect of the semiconductor chip meets the preset standard according to the coating thickness variance value, performs secondary determination, calculates the average value of the coating thickness of each detection point if the central control unit determines that the coating effect of the semiconductor chip meets the preset standard, and determines whether the coating effect of each detection point meets the preset standard according to the average value of the coating thickness of each detection point, or determines that the surface of the semiconductor chip is uneven, and the central control unit adjusts the primary coating thickness and the secondary preset coating thickness preset in the central control unit to the corresponding value according to the coating thickness variance value.
5. The auxiliary positioning device for film thickness measurement according to claim 4, wherein the central control unit determines a determination mode of whether the plating effect on the surface of the semiconductor chip meets a preset standard according to an average value of the plating layer thicknesses of the detection points when the plating effect of the semiconductor chip meets the preset standard is determined for the second time, or sends a raw material shortage notification when the central control unit determines that the plating effect on the surface of the semiconductor chip does not meet the preset standard.
6. The auxiliary positioning device for film thickness measurement according to claim 4, wherein the central control unit marks a difference between the coating thickness variance value and a preset coating thickness variance value preset in the central control unit as a variance difference value when the secondary judgment is that the coating effect of the semiconductor chip does not meet a preset standard, and a plurality of standard adjustment modes for the first-stage preset coating thickness and the second-stage preset coating thickness are provided according to the variance difference value, wherein the adjustment modes are different for the first-stage preset coating thickness and the second-stage preset coating thickness.
7. The auxiliary positioning device for film thickness measurement according to claim 4, wherein the central control unit records a difference between the thickness of the secondary preset plating layer and the thickness of the metal plating layer on the surface of the semiconductor chip as a thickness difference when preliminarily judging that the plating effect on the surface of the semiconductor chip does not meet a preset standard, and a plurality of determination modes for the number of detection points and the rotation angle of the rotation lifting device are arranged according to the thickness difference, wherein the number of the detection points and the rotation angle of the rotation lifting device are different;
and stopping coating when the central control unit judges that the thickness of the coating film of the semiconductor chip reaches the preset thickness preset in the central control unit.
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