CN117089920A - Silicon leakage detection method, crucible driving device, single crystal furnace and computer readable storage medium - Google Patents
Silicon leakage detection method, crucible driving device, single crystal furnace and computer readable storage medium Download PDFInfo
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- CN117089920A CN117089920A CN202210525984.XA CN202210525984A CN117089920A CN 117089920 A CN117089920 A CN 117089920A CN 202210525984 A CN202210525984 A CN 202210525984A CN 117089920 A CN117089920 A CN 117089920A
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- 239000013078 crystal Substances 0.000 title claims abstract description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 56
- 239000010703 silicon Substances 0.000 title claims abstract description 56
- 238000001514 detection method Methods 0.000 title claims abstract description 18
- 238000003860 storage Methods 0.000 title claims abstract description 12
- 239000002210 silicon-based material Substances 0.000 claims abstract description 103
- 238000005303 weighing Methods 0.000 claims abstract description 71
- 230000007246 mechanism Effects 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 21
- 230000000670 limiting effect Effects 0.000 claims description 18
- 238000004891 communication Methods 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 10
- 238000004590 computer program Methods 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 7
- 230000000630 rising effect Effects 0.000 claims description 3
- 238000009434 installation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000000802 evaporation-induced self-assembly Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application discloses a silicon leakage detection method, a crucible driving device, a single crystal furnace and a computer readable storage medium, and relates to the technical field of solar photovoltaics. The crucible driving apparatus may specifically include: the device comprises a base, a crucible shaft assembly, a lifting rotating mechanism and a weighing sensor; one end of the crucible shaft assembly is connected with the lifting rotating mechanism, and the other end of the crucible shaft assembly stretches into the single crystal furnace to be connected with the crucible; the lifting rotating mechanism is arranged on the base and used for driving the crucible shaft assembly to drive the crucible to lift or rotate to a preset position; the weighing sensor is arranged on the lifting rotating mechanism and connected with the crucible shaft assembly, and the weighing sensor is used for measuring the weight of silicon materials in the crucible in real time through the crucible shaft assembly. According to the embodiment of the application, whether the silicon material in the crucible leaks silicon or not can be rapidly and accurately judged through the weighing sensor, and corresponding treatment is carried out on different silicon leakage phenomena, so that the crystal pulling safety is improved.
Description
Technical Field
The application belongs to the technical field of solar photovoltaic, and particularly relates to a silicon leakage detection method, a crucible driving device, a single crystal furnace and a computer readable storage medium.
Background
With the development of photovoltaic technology, solar energy is widely popularized as a green, environment-friendly and renewable energy source. Monocrystalline silicon is used as the most important raw material part of the solar photovoltaic module, and the demand of the monocrystalline silicon is also increasing.
Currently, as the silicon single crystal manufacturing industry develops towards large thermal fields, large charges and large sizes, the operation safety of a single crystal furnace becomes a general concern. Especially during the crystal pulling process, once serious silicon leakage occurs, the pressure in the furnace can rise rapidly and even explode. In the prior art, a mode of arranging a pressure sensor in a single crystal furnace is generally adopted, and the real-time pressure in the single crystal furnace is measured in the single crystal silicon preparation process, so that whether the silicon leakage and the like occur or not is judged.
However, the pressure change in the single crystal furnace is caused by more reasons, whether the silicon leakage problem occurs cannot be rapidly and accurately judged according to the pressure change in the furnace, and the hysteresis problem exists in pressure early warning. Therefore, how to ensure that when silicon leakage occurs in a single crystal furnace filled with a large-size crucible, rapid and accurate early warning becomes an important problem to be solved urgently.
Disclosure of Invention
The embodiment of the application aims to provide a silicon leakage detection method, a crucible driving device, a single crystal furnace and a computer readable storage medium, which can solve the problems of low hysteresis and low precision of the existing silicon leakage detection.
In a first aspect, an embodiment of the present application provides a crucible driving apparatus, which is applied to a single crystal furnace, wherein a crucible for carrying silicon material is arranged in the single crystal furnace, and the crucible driving apparatus includes: the device comprises a base, a crucible shaft assembly, a lifting rotating mechanism and a weighing sensor;
one end of the crucible shaft assembly is connected with the lifting and rotating mechanism, and the other end of the crucible shaft assembly stretches into the single crystal furnace to be connected with the crucible;
the lifting and rotating mechanism is arranged on the base and is used for driving the crucible shaft assembly to drive the crucible to lift or rotate to a preset position;
the weighing sensor is arranged on the lifting rotating mechanism and connected with the crucible shaft assembly, and the weighing sensor is used for measuring the weight of the silicon material in the crucible in real time through the crucible shaft assembly.
Optionally, the lifting rotation mechanism includes: the device comprises a bracket, a screw rod, a lifting driving assembly and a rotary driving assembly;
The screw rod is respectively in transmission connection with the bracket and the lifting driving assembly, and the lifting driving assembly drives the screw rod to rotate so as to drive the bracket to lift;
the weighing sensor, the rotary driving assembly and the crucible shaft assembly are arranged on the support, the crucible shaft assembly is respectively connected with the rotary driving assembly and the weighing sensor, and the rotary driving assembly is used for driving the crucible shaft to rotate.
Optionally, the bracket comprises a side plate and a bottom plate which are connected, and the side plate is respectively and movably connected with the screw rod and the base;
the crucible shaft assembly includes: the crucible shaft and the connecting seat are sleeved on the crucible shaft, one end of the crucible shaft is connected with the crucible, and the other end of the crucible shaft is connected with the rotary driving assembly;
the weighing sensor is clamped between the bottom plate and the connecting seat.
Optionally, the lifting rotation mechanism further includes: fine tuning the structure;
the fine adjustment structure is respectively connected with the side plate and the bottom plate and is used for driving the bottom plate to move along a first direction so as to adjust the distance between the bottom plate and the connecting seat;
The first direction is a direction parallel to the axis of the crucible shaft.
Optionally, the fine tuning structure includes: fine tuning the screw;
the side plate is provided with a first adjusting part, and the first adjusting part is provided with a first adjusting hole;
the bottom plate is provided with a second adjusting part, and the second adjusting part is provided with a second adjusting hole opposite to the first adjusting hole;
the fine adjustment screw rod penetrates through the first adjusting hole and the second adjusting hole in sequence.
Optionally, the number of the weighing sensors is one or at least two;
the weighing sensors are arranged in one-to-one correspondence with the bottom plates, and each bottom plate and each side plate are correspondingly provided with one fine adjustment structure.
Optionally, in the case that the number of the load cells is one, the load cells are coaxially disposed with the crucible shaft assembly;
and under the condition that the number of the weighing sensors is at least two, at least two weighing sensors are uniformly arranged along the circumferential direction of the crucible shaft assembly.
Optionally, the at least two load cells are located at the same horizontal plane.
Optionally, a limiting guide rail is arranged on one side of the side plate, close to the crucible shaft, and the extending direction of the limiting guide rail is parallel to the axis of the crucible shaft;
The connecting seat comprises: the crucible is characterized by comprising a crucible shaft, a crucible guide rail, a crucible cover, a limiting plate, a limiting guide rail, a limiting groove, a limiting guide rail and a limiting groove, wherein the crucible cover is arranged on the crucible cover;
the weighing sensor is clamped between the weighing connecting plate and the bottom plate.
The embodiment of the application also provides a single crystal furnace, which comprises: a furnace body and the crucible driving device;
the crucible driving device is arranged on the furnace body to drive the crucible in the furnace body to lift and/or measure the weight of the silicon material in the crucible in real time.
The embodiment of the application also provides a silicon leakage detection method which is applied to the single crystal furnace, and the single crystal furnace comprises: a furnace body and a crucible driving device; the crucible driving device is arranged on the furnace body, and a crucible shaft assembly of the crucible driving device is connected with a weighing sensor; the silicon leakage detection method comprises the following steps:
acquiring an actual weight value of the silicon material in the crucible through the weighing sensor;
obtaining a theoretical weight value of the silicon material in the crucible;
calculating the difference value between the theoretical weight value and the actual weight value at the same moment;
And when the difference value meets a preset judging condition, determining that the silicon material in the crucible leaks.
Optionally, when the difference value meets a preset judgment condition, determining that the silicon material in the crucible leaks includes:
when the difference value is smaller than or equal to a first threshold value, determining that the silicon material in the crucible is subjected to primary leakage, and performing first silicon leakage operation treatment on the primary leakage;
when the difference value is greater than or equal to a second threshold value, determining that secondary leakage occurs in the silicon material in the crucible, and performing second silicon leakage operation treatment on the secondary leakage;
wherein the first threshold is less than the second threshold.
Optionally, the single crystal furnace further includes: the upper transmission mechanism is provided with a weighing module; the step of obtaining the theoretical weight value of the silicon material in the crucible comprises the following steps:
acquiring a real-time weight value of the drawn silicon rod through the weighing module;
and calculating the theoretical weight value of the silicon material in the crucible according to the real-time weight value of the silicon rod.
Optionally, the step of obtaining the theoretical weight value of the silicon material in the crucible further includes:
obtaining crystal pulling parameters in the crystal pulling process; the crystal pulling parameters include: the seed crystal rising rate and the diameter of the crystal pulling silicon rod;
And calculating the theoretical weight value of the silicon material in the crucible according to the crystal pulling parameter.
Optionally, the step of obtaining the theoretical weight value of the silicon material in the crucible may further include:
acquiring the liquid level height value of the silicon material in the crucible;
and calculating the theoretical weight value of the silicon material through the liquid level height value and the inner diameter size of the crucible.
The embodiment of the application also provides a single crystal furnace, which comprises: the device comprises a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory are communicated with each other through the communication bus;
a memory for storing a computer program;
and the processor is used for realizing the steps of the silicon leakage detection method when executing the program stored in the memory.
The embodiment of the application also provides a computer readable storage medium, on which a computer program is stored, which when executed by a processor, causes the processor to execute the silicon leakage detection method as described above.
In the embodiment of the application, the crucible shaft assembly of the crucible driving device is connected with the weighing sensor, and the real-time weight value of the silicon material in the crucible can be measured through the weighing sensor, so that in the crystal pulling process, whether the silicon material in the crucible leaks can be rapidly and accurately judged through the difference value between the theoretical weight value of the silicon material in the crucible and the real-time weight value of the silicon material in the crucible, and corresponding treatment is carried out for different silicon leakage phenomena, thereby improving the crystal pulling safety.
Drawings
FIG. 1 is a schematic view of a crucible driving apparatus according to an embodiment of the present application;
FIG. 2 is a schematic structural diagram of a single crystal furnace according to an embodiment of the present application;
fig. 3 is a flowchart illustrating a method for detecting a silicon leakage according to an embodiment of the present application.
Reference numerals illustrate:
10: a single crystal furnace; 101: a crucible; 20: a crucible driving device; 21: a base; 22: a crucible shaft assembly; 23: a lifting and rotating mechanism; 24: a weighing sensor; 231: a bracket; 232: a screw rod; 233: a lifting driving assembly; 234: a rotary drive assembly; 235: fine tuning the structure; 2311: a side plate; 2312: a bottom plate; 221: a crucible shaft; 222: a connecting seat; 2221: a weighing connecting plate; 2222: a limiting plate; 2223: a spacing guide rail; 2224: a limit groove; 2211: a crucible support; 2351: fine tuning the screw; 2352: a first adjusting part; 2353: a second adjusting part; 211: a guide rail; 212: a fixing part.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The terms first, second and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the application may be practiced otherwise than as specifically illustrated or described herein. Furthermore, in the description and claims, "and/or" means at least one of the connected objects, and the character "/", generally means that the associated object is an "or" relationship.
The silicon leakage detection method, the crucible driving device, the single crystal furnace and the computer readable storage medium provided by the embodiment of the application are described in detail below through specific embodiments and application scenes thereof with reference to the accompanying drawings.
Referring to fig. 1, a schematic diagram of a crucible driving apparatus according to an embodiment of the present application is shown. Referring to fig. 2, a schematic structural diagram of a single crystal furnace according to an embodiment of the present application is shown.
In the embodiment of the application, the application of the crucible driving device to the single crystal furnace is taken as an example, and the concrete structure and principle of the crucible driving device are explained. In practical application, the single crystal furnace 10 is provided with a crucible 101 for carrying silicon material, a thermal field assembly and the like. The crucible 101 driving apparatus may specifically include: a base 21, a crucible shaft assembly 22, a lifting and rotating mechanism 23, and a load cell 24; one end of the crucible shaft assembly 22 is connected with the lifting and rotating mechanism 23, and the other end extends into the single crystal furnace 10 to be connected with the crucible 101; the lifting and rotating mechanism 23 is arranged on the base 21, and the lifting and rotating mechanism 23 is used for driving the crucible shaft assembly 22 to drive the crucible 101 to lift or rotate to a preset position; the weighing sensor 24 is arranged on the lifting and rotating mechanism 23 and is connected with the crucible shaft assembly 22, and the weighing sensor 24 is used for measuring the weight of the silicon material in the crucible 101 through the crucible shaft assembly 22 in real time.
The silicon material in the crucible 101 includes, but is not limited to, bulk or granular silicon material, liquid silicon material, and the like.
In the embodiment of the application, since the weighing sensor 24 is connected to the crucible shaft assembly 22 of the crucible 101 driving device, the real-time weight value of the silicon material in the crucible 101 can be measured by the weighing sensor 24, so that in the crystal pulling process, the difference between the theoretical weight value of the silicon material in the crucible 101 and the real-time weight value of the silicon material in the crucible 101 can be used for rapidly and accurately judging whether the silicon material in the crucible 101 leaks or not, and corresponding treatment is performed for different silicon leakage phenomena, thereby improving the crystal pulling safety.
In the embodiment of the present application, the specific structure of the base 21 may take various forms, and the base 21 directly or indirectly carries and supports the functions of the lifting and rotating mechanism 23, the crucible shaft assembly 22, and the load cell 24. The crucible shaft assembly 22 can function as a support and connect the lifting and rotating mechanism 23 with the crucible 101. In practical applications, a sealing member may be further disposed between the crucible shaft assembly 22 and the furnace body of the single crystal furnace 10, so as to satisfy the sealing performance of the single crystal furnace 10 during the lifting or rotating process of the crucible shaft assembly 22.
In the embodiment of the present application, the lifting and rotating mechanism 23 may provide a driving force for lifting or rotating the crucible 101. Specifically, the elevating rotation mechanism 23 includes: a bracket 231, a screw 232, a lift driving assembly 233, and a rotation driving assembly 234; the screw 232 is respectively in transmission connection with the bracket 231 and the lifting driving assembly 233, and the lifting driving assembly 233 drives the screw 232 to rotate so as to drive the bracket 231 to lift; the load cell 24, the rotary driving assembly 234 and the crucible shaft assembly 22 are all disposed on the bracket 231, and the crucible shaft assembly 22 is respectively connected with the rotary driving assembly 234 and the load cell 24, and the rotary driving assembly 234 is used for driving the crucible shaft 221 to rotate.
In the embodiment of the application, the lifting driving component 233 is used for providing power for lifting the crucible 101, and plays a role in driving the crucible 101 to stably lift at a constant speed. The elevation driving assembly 233 may include an elevation driving member fixed to the base 21, and an output shaft of the elevation driving member is connected to the screw shaft 232 to be brought to the elevation of the bracket 231 by the screw shaft 232. Specifically, the lift drive includes, but is not limited to, a motor, a cylinder, and the like. In the case where the lifting drive is a motor, the lifting drive may be a gear motor. Alternatively, the lift drive assembly 233 may also include a speed reducer that may be coupled to the lift drive via a coupling or belt-to-rotary chain drive. Similar to the lifting drive described above, the rotary drive assembly 234 is configured to provide power to rotate the crucible 101, and is configured to drive the crucible 101 to rotate at a constant speed. The rotary drive assembly 234 may also include a rotary drive member having an output shaft coupled to the crucible shaft assembly 22 to rotate the crucible 101 via the crucible shaft assembly 22. The rotary drive also includes, but is not limited to, a motor, a cylinder, and the like. Similar to the lift drive described above, the rotary drive member may be a gear motor in embodiments of the present application, or the rotary drive assembly 234 may include a gear reducer coupled to the rotary drive member.
In the embodiment of the present application, the screw 232 is used to lift the support 231, so that the precision and stability of lifting the crucible 101 can be effectively improved. In practical application, the lifting of the support 231 can be realized by other transmission modes such as a gear, a rack, a belt transmission mechanism and the like, and the embodiment of the application is not repeated.
In the embodiment of the present application, the load cell 24, the rotation driving assembly 234, and the crucible shaft assembly 22 are lifted and lowered by the support 231. In order to improve the structural stability, safety and precision of the support 231, the support 231 may specifically include a side plate 2311 and a bottom plate 2312 connected to each other, where the side plate 2311 is movably connected to the screw 232 and the base 21, respectively. In order to improve the connection reliability and stability between the side plate 2311 and the base 21, the base 21 may be further provided with a guide rail 211, where the extending direction of the guide rail 211 is the same as the length direction of the screw 232, or the guide rail 211 extends along the lifting direction of the crucible 101, the side plate 2311 is provided with a fixing portion 212 matched with the guide rail 211, and the fixing portion 212 is movably disposed on the guide rail 211, so that the guide rail 211 can provide guiding and supporting limiting effects for the side plate 2311 during the lifting process of the support 231, so that the lifting of the support 231 is more stable and accurate. In the embodiment of the application, the guide rails 211 are symmetrically arranged at two sides of the screw 232, so that the lifting of the bracket 231 can be more stable and accurate. In the embodiment of the present application, the fixing portion 212 may be provided with a fixing groove, and the guide rail 211 is at least partially embedded in the fixing groove, so as to achieve the connection between the side plate 2311 and the base 21.
It should be noted that, a fixing groove may be provided on the base 21, and a guide rail 211 is provided on the side plate 2311, so that in the lifting process of the bracket 231, through the cooperation between the fixing groove and the guide rail 211, the support and the limit of the side plate 2311 in the lifting process of the bracket 231 can be achieved, and the overall lifting of the bracket 231 is more stable.
In an embodiment of the present application, the crucible shaft assembly 22 may specifically include: the crucible shaft 221 and the connecting seat 222 sleeved on the crucible shaft 221, wherein one end of the crucible shaft 221 is connected with the crucible 101, and the other end is connected with the rotary driving assembly 234; load cell 24 is sandwiched between bottom plate 2312 and connection block 222. It should be noted that, the end of the crucible shaft 221 connected to the crucible 101 may be provided with a crucible support 2211, and the crucible 101 is disposed on the crucible support 2211, so that the crucible shaft 221 may provide more stable and effective support and lifting for the crucible 101. In an embodiment of the present application, the rotation driving assembly 234 may be connected to the crucible shaft 221 through a linkage such as a belt, a gear, etc., so as to rotate the crucible shaft 221.
In practical application, since the crucible shaft 221 rotates under the driving of the rotation driving member, in order to avoid the influence of the symmetrical weight sensor 24 caused by shaking and the like during the rotation of the crucible shaft 221, in the embodiment of the application, the weighing sensor 24 is fixedly disposed between the connecting seat 222 and the bottom plate 2312 by connecting the connecting seat 222 disposed on the crucible shaft 221 with the weighing sensor 24. It will be appreciated that the connection block 222 is disposed above the bottom plate 2312 to facilitate simultaneous weighing of the connection block 222, the rotary drive assembly 234, the crucible shaft 221, and the crucible 101 disposed on the crucible shaft 221 by the load cell 24. In practical applications, the weight of the crucible shaft 221, the connecting seat 222, the rotary driving assembly 234 and the crucible 101 without the silicon material are fixed and are easy to obtain, so that the real-time weight of the silicon material in the crucible 101 can be easily calculated by the load cell 24.
In the embodiment of the present application, the load cell 24 may measure the weight of the silicon material in any state in the crucible 101 in real time. In the embodiment of the present application, a molten silicon in which a silicon material in a crucible 101 is in a molten state will be described as an example.
In the embodiment of the present application, in order to make the installation of the load cell 24 easier and more convenient, the lifting and rotating mechanism 23 further includes: trimming structure 235; the fine adjustment structure 235 is connected to the side plate 2311 and the bottom plate 2312, and the fine adjustment structure 235 is used for driving the bottom plate 2312 to move along a first direction so as to adjust a distance between the bottom plate 2312 and the connecting seat 222; the first direction is a direction parallel to the axis of the crucible shaft 221, or the first direction is a lifting direction of the crucible 101. In the embodiment of the present application, when the load cell 24 is installed, the distance between the bottom plate 2312 and the connection seat 222 can be increased or decreased by the fine adjustment structure 235, so as to adjust the distance between the load cell 24 and the connection seat 222, thereby adjusting the installation accuracy of the load cell 24 and avoiding the problem of inaccurate weighing.
In the embodiment of the application, the fine adjustment structure 235 is disposed between the bottom plate 2312 and the connection seat 222, so that the distance between the bottom plate 2312 and the connection seat 222 is adjusted by the fine adjustment structure 235, and further the accuracy of the weighing sensor 24 is adjusted. Specifically, the structure of the fine tuning structure 235 may have various structures, and in one implementation, the fine tuning structure 235 may include: a fine tuning screw 2351; the side plate 2311 is provided with a first adjusting part 2352, and the first adjusting part 2352 is provided with a first adjusting hole; the bottom plate 2312 is provided with a second adjusting part 2353, and the second adjusting part 2353 is provided with a second adjusting hole opposite to the first adjusting hole; the fine adjustment screw 2351 is sequentially inserted into the first adjustment hole and the second adjustment hole. It should be noted that the fine adjustment screw 2351 may be in threaded connection with the first adjustment hole and the second adjustment hole. In the embodiment of the application, the fine adjustment structure 235 is simpler by the fine adjustment screw 2351 penetrating through the first adjustment hole and the second adjustment hole in sequence.
In the embodiment of the present application, the first adjusting portion 2352 and the second adjusting portion 2353 may be components of the fine adjustment structure 235, and the first adjusting portion 2352, the second adjusting portion 2353 and the fine adjustment screw 2351 may form all or part of the fine adjustment structure 235. Alternatively, the first adjusting portion 2352 may be an integral part of the side plate 2311, and the second adjusting portion 2353 may be an integral part of the bottom plate 2312. In this regard, the setting may be performed by those skilled in the art according to the actual situation.
In the embodiment of the present application, the first adjusting portion 2352 may be a first adjusting plate, and the first adjusting plate and the side plate 2311 may be connected by a fastener such as a screw; the second adjusting portion 2353 may be a second adjusting plate, where the second adjusting plate is fixedly connected with the bottom plate 2312 by welding or integrally formed, and the second adjusting plate may be connected with the side plate 2311 by a fastener such as a screw, so that the bottom plate 2312 and the side plate 2311 are detachably connected. In practical applications, the load cell 24 may be fixedly connected to the bottom plate 2312, and then the bottom plate 2312 is connected to the side plate 2311, and the fixed position of the bottom plate 2312 on the side plate 2311 is adjusted by the fine adjustment screw 2351, so as to adjust the distance (interval) between the bottom plate 2312 and the connection seat 222, so that the load cell 24 may be abutted against the connection seat 222; after the adjustment by the fine adjustment screw 2351 is completed, the first adjusting plate, the second adjusting plate and the side plate 2311 may be fixed by screws, so as to improve the connection reliability and stability between the bottom plate 2312 and the side plate 2311. In the embodiment of the application, the fine adjustment screw 2351 can be used to make the adjustment precision of the distance between the bottom plate 2312 and the connecting seat 222 higher and the controllability better.
It should be understood that, in the embodiment of the present application, the fine adjustment structure 235 is used to implement the installation and adjustment of the load cell 24, and thus, the first adjustment hole and the second adjustment hole can be understood as holes having the same direction as the gravity.
It should be noted that, in the embodiment of the present application, an exemplary description is given that the fine adjustment structure 235 includes the fine adjustment screw 2351, and those skilled in the art may also set the fine adjustment structure 235 with other structural forms, so that the installation and adjustment of the weighing sensor 24 is realized by the fine adjustment structure 235, which is not repeated in the embodiment of the present application.
In the present embodiment, the number of load cells 24 is one or at least two; in the case where the number of the load cells 24 is one, the load cells 24 are disposed coaxially with the crucible shaft assembly 22 (or the crucible shaft 221), for example, the load cells 24 are disposed directly under the crucible shaft assembly 22, so that the silicon material in the crucible 101 can be weighed more accurately. In the case where the number of the load cells 24 is at least two, the at least two load cells 24 are uniformly disposed along the circumferential direction of the crucible shaft assembly 22. For example, in the case where the number of load cells 24 is two, the two load cells 24 may be understood to be symmetrically disposed on both sides of the crucible shaft assembly 22.
In the embodiment of the present application, in order to facilitate the installation and adjustment of each load cell 24, the load cells 24 may be disposed in a one-to-one correspondence with the bottom plates 2312, and a fine adjustment structure 235 is disposed between each bottom plate 2312 and the side plate 2311, so that an independent position adjustment may be performed on each load cell 24, thereby improving the accuracy of the load cell 24.
It should be noted that, in the case where the number of the load cells 24 is at least two, the at least two load cells 24 should be located on the same horizontal plane, so that the weighing precision of the load cells 24 can be effectively ensured.
In the embodiment of the present application, the side plate 2311 serves to connect with the base 21 on one hand, and also serves to support and guide the crucible shaft 221 on the other hand. Specifically, a side plate 2311 is provided with a limit guide rail 2223 on a side close to the crucible shaft 221, and an extending direction of the limit guide rail 2223 is parallel to an axis line of the crucible shaft 221, and may be understood that the limit guide rail 2223 extends along the first direction; the connection base 222 includes: the continuous connecting plate 2221 and limiting plate 2222 weigh, the connecting plate 2221 cover of weighing locates on the crucible axle 221, and limiting plate 2222 is relative with curb plate 2311, and is provided with spacing groove 2224 on the limiting plate 2222, and spacing guide 2223 movably inlays and locates in the spacing groove 2224, like this, but can make crucible axle 221 more stable in lift and rotatory in-process through limiting plate 2222 and curb plate 2311 swing joint. In the embodiment of the present application, the load cell 24 is sandwiched between the weighing connection plate 2221 and the bottom plate 2312.
It will be appreciated that the load cell 24 is disposed between the bottom plate 2312 and the weighing connection plate 2221 and is parallel to the axis direction of the center of gravity of the crucible 101, so that a weighing error caused by eccentricity can be effectively avoided, and the accuracy of weighing the silicon material in the crucible 101 can be effectively improved.
In the embodiment of the application, two limit rails 2223 may be disposed on the side plate 2311, and two limit rails 2223 are disposed on two sides of the crucible shaft 221, and the number of corresponding limit grooves 2224 is also two and corresponds to the number of limit rails 2223 one by one, so that stability of the crucible shaft 221 in the lifting and rotating processes can be more effectively improved.
In practical applications, the limit rail 2223 may also serve as an auxiliary guide and limit for the trimming screw 2351 of the trimming structure 235 when the bottom plate 2312 is connected to the side plate 2311. In the embodiment of the application, through the cooperation of the limit guide rail 2223 and the limit groove 2224, the weighing precision of the weighing sensor 24 can be ensured, the rotation and lifting stability of the crucible shaft 221 can be higher, and the weighing error caused by the shaking of the crucible shaft 221 can be effectively reduced.
In summary, the crucible driving device according to the embodiment of the application at least comprises the following advantages:
In the embodiment of the application, the crucible shaft assembly of the crucible driving device is connected with the weighing sensor, and the real-time weight value of the silicon material in the crucible can be measured through the weighing sensor, so that in the crystal pulling process, whether the silicon material in the crucible leaks can be rapidly and accurately judged through the difference value between the theoretical weight value of the silicon material in the crucible and the real-time weight value of the silicon material in the crucible, and corresponding treatment is carried out for different silicon leakage phenomena, thereby improving the crystal pulling safety.
The embodiment of the application also provides a single crystal furnace, which particularly comprises a furnace body and the crucible driving device; the crucible driving device is arranged on the furnace body to drive the crucible in the furnace body to lift and/or measure the weight of the silicon material in the crucible in real time.
In the embodiment of the present application, the structure and the working principle of the crucible driving device are the same as those of the crucible driving device in the foregoing embodiments, and are not described herein again.
Referring to fig. 3, a flowchart of steps of a method for detecting silicon leakage according to an embodiment of the present application is shown. The method for detecting silicon leakage according to the embodiment of the present application is specifically applied to the single crystal furnace according to the above embodiments, and the specific structure and principle of the single crystal furnace may refer to the above embodiments, which are not described herein.
The method for detecting the silicon leakage in the embodiment of the application specifically comprises the following steps:
step 301, acquiring an actual weight value of silicon material in a crucible through a weighing sensor.
In practical applications, the weight value of the silicon material initially put into the crucible may be obtained before the silicon material is put into the crucible, or may be obtained by a load cell on the crucible driving device, which may be selected by those skilled in the art according to practical situations. In the crystal pulling process, the weight of the silicon material in the crucible is generally decreased along with the pulling of the seed crystal, and in the embodiment of the application, the actual weight value of the silicon material remained in the crucible can be measured in real time through the weighing sensor because the weighing sensor is arranged on the crucible driving device of the single crystal furnace.
And 303, acquiring a theoretical weight value of the silicon material in the crucible.
In the embodiment of the application, a plurality of methods for obtaining the theoretical weight value of the silicon material in the crucible can be adopted. In one possible embodiment, under the condition that the weighing module is arranged on the upper transmission mechanism of the single crystal furnace, the real-time weight value of the drawn silicon rod can be obtained through the weighing module; and then calculating the theoretical weight value of the silicon material in the crucible according to the real-time weight value of the silicon rod. Specifically, when calculating the theoretical weight value of the silicon material in the crucible, the theoretical weight value of the silicon material initially put into the crucible and the weight value of the molten silicon material measured by the weighing sensor on the crucible driving device after the silicon material in the crucible is molten can be combined, and the theoretical weight value can be set by a person skilled in the art according to practical situations, and the theoretical weight value is not limited. In practical application, the upper transmission mechanism is connected with the seed crystal, and the weight value added by the weighing module on the upper transmission mechanism is equal to or approximately equal to the weight value reduced by the weighing sensor of the crucible driving device within the error range.
In another possible embodiment of the present application, the step of obtaining a theoretical weight value of the silicon material in the crucible may further include:
obtaining crystal pulling parameters in the crystal pulling process; the crystal pulling parameters may include, but are not limited to: the rising speed of the seed crystal, the diameter of the crystal pulling silicon rod and the like; then, a theoretical weight value of the silicon material in the crucible is calculated according to the pulling parameters. According to the pulling parameters, the weight of the pulled silicon rod can be calculated firstly, and then the theoretical weight value of the residual silicon material in the crucible is calculated by combining parameters such as the weight value of the initial silicon material put in the crucible and the like.
In yet another embodiment of the present application, the step of obtaining a theoretical weight value of the silicon material in the crucible may further include: acquiring the liquid level height value of the silicon material in the crucible; and calculating the theoretical weight value of the silicon material through the liquid level height value and the inner diameter size of the crucible.
It should be noted that, one skilled in the art can optionally calculate the theoretical weight value of the silicon material in the crucible in one or more modes, so that the theoretical weight value of the silicon material in the crucible can be more accurate, and the accuracy of silicon leakage detection can be effectively improved.
Step 305, calculating the difference between the theoretical weight value and the actual weight value at the same time.
In practical application, the theoretical weight value and the actual weight value of the silicon material in the crucible can be displayed in real time in a curve mode, and the difference between the theoretical weight value and the actual weight value is displayed in a linear mode, so that a user can obtain the difference more quickly and intuitively. When calculating the theoretical weight value and the actual weight value of the silicon material in the crucible, the calculation method may be offset-compensated based on the actual empirical value.
Step 307, determining that the silicon material in the crucible leaks when the difference value meets a preset judging condition.
In the actual crystal pulling process, the silicon leakage can be in various conditions, and various treatment modes can be adopted for different silicon leakage phenomena. For example, when the silicon material slowly leaks, the heating system of the furnace platform system can be quickly closed, so that the silicon material can be quickly solidified to form a 'pier crucible', a large amount of silicon material can be prevented from entering the furnace bottom and scalding through the furnace bottom to cause explosion accidents, and a series of auxiliary operations such as alarm reporting can be provided. When the crucible is toppled or cracked to cause leakage of a large amount of silicon materials instantaneously, the pressure in the furnace is increased instantaneously due to the large amount of silicon materials in a molten state, so that an alarm is required to be generated rapidly, people around the organization are evacuated, and the like, so that the safety of the people is guaranteed to the greatest extent.
In the embodiment of the application, the difference value meets the preset judging condition to determine that the silicon material in the crucible leaks, which specifically comprises the following steps:
when the difference value is smaller than or equal to a first threshold value, determining that the silicon material in the crucible is subjected to primary leakage, and performing first silicon leakage operation treatment on the primary leakage;
when the difference value is greater than or equal to a second threshold value, determining that secondary leakage occurs in the silicon material in the crucible, and performing second silicon leakage operation treatment on the secondary leakage;
wherein the first threshold is less than the second threshold.
In the embodiment of the present application, the first threshold and the second threshold may be set according to a large amount of experience values accumulated by the user and theoretical values. The first drain operation process and the second drain operation process may include different processing methods and steps. Specifically, the first threshold value may be any value in the range of 0.5kg to 2kg, for example, the first threshold value may be 0.5kg, 1.0kg, 1.2kg, 1.5kg, 1.8kg, 2kg, or the like; the second threshold value may be any value in the range of 5kg to 15kg, and for example, the second threshold value may be 5kg, 8kg, 10kg, 11.5kg, 12kg, 14kg, 15kg, or the like.
For example, in the embodiment of the application, the first threshold value may be 2kg, and when the difference between the theoretical weight value and the actual weight value of the silicon material at the same time is less than or equal to 2kg, it may be determined that the silicon material in the crucible leaks, and at this time, the heating system of the hearth system needs to be quickly turned off, so that the silicon material is quickly solidified to "pier the crucible", so as to avoid a large amount of silicon material entering the hearth and burning through the hearth to cause an explosion accident. The second threshold value can be 10kg, when the difference value between the theoretical weight value and the actual weight value of the silicon material at the same time is greater than or equal to 10kg, the occurrence of large leakage can be determined, and at the moment, an alarm needs to be quickly generated, surrounding personnel are evacuated, and the like, so that the safety of personnel is guaranteed to the greatest extent.
In practical application, when the difference value is smaller than or equal to the third threshold value, it is determined that the silicon material in the crucible leaks three-stage, and the third silicon leakage operation is performed for the three-stage leakage. The particular third threshold may be greater than the first threshold and less than the second threshold. Of course, the person skilled in the art can also adjust the first threshold, the second threshold, the third threshold, and the like according to the actual situation for different situations of the leaked silicon, and adaptively improve the leaked silicon operation process corresponding to the different thresholds, which is not described in detail in this embodiment of the present application.
In the embodiment of the application, the crucible shaft assembly of the crucible driving device is connected with the weighing sensor, and the real-time weight value of the silicon material in the crucible can be measured through the weighing sensor, so that in the crystal pulling process, whether the silicon material in the crucible leaks can be rapidly and accurately judged through the difference value between the theoretical weight value of the silicon material in the crucible and the real-time weight value of the silicon material in the crucible, and corresponding treatment is carried out for different silicon leakage phenomena, thereby improving the crystal pulling safety.
The embodiment of the application also provides a single crystal furnace, which comprises a processor, a communication interface, a memory and a communication bus, wherein the processor and the communication interface, and the memory are communicated with each other through the communication bus;
A memory for storing a computer program;
and the processor is used for realizing any step of the silicon leakage detection method when executing the program stored in the memory.
For example, when the processor is used for executing the program stored in the memory, the following steps are implemented:
acquiring an actual weight value of the silicon material in the crucible through a weighing sensor;
obtaining a theoretical weight value of a silicon material in a crucible;
calculating the difference value between the theoretical weight and the actual weight at the same moment;
and when the difference value meets a preset judging condition, determining that the silicon material in the crucible leaks.
The communication bus mentioned by the single crystal furnace can be a peripheral component interconnect standard (Peripheral Component Interconnect, abbreviated as PCI) bus or an extended industry standard architecture (Extended Industry Standard Architecture, abbreviated as EISA) bus, etc. The communication bus may be classified as an address bus, a data bus, a control bus, or the like. For ease of illustration, the figures are shown with only one bold line, but not with only one bus or one type of bus.
The communication interface is used for communication between the single crystal furnace and other equipment.
The memory may include random access memory (Random Accessmemory, RAM) or non-volatile memory (non-volatile memory), such as at least one disk memory. Optionally, the memory may also be at least one memory device located remotely from the aforementioned processor.
The processor may be a general-purpose processor, including a central processing unit (Central Processing Unit, CPU for short), a network processor (Network Processor, NP for short), etc.; but also digital signal processors (Digital Signal Processing, DSP for short), application specific integrated circuits (Application Specific Integrated Circuit, ASIC for short), field-programmable gate arrays (Field-Programmable Gate Array, FPGA for short) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.
In yet another embodiment of the present invention, there is also provided a computer readable storage medium having a computer program stored therein, which when executed by a processor, causes the processor to perform the steps of any of the foregoing silicon leakage detection methods of the above embodiments.
In yet another embodiment of the present invention, a computer program product comprising instructions which, when run on a computer, cause the computer to perform the steps of the method of detecting silicon leakage of any of the previous embodiments is also provided.
In the above embodiments, it may be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented in software, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When loaded and executed on a computer, produces a flow or function in accordance with embodiments of the present invention, in whole or in part. The computer may be a general purpose computer, a special purpose computer, a computer network, or other programmable apparatus. The computer instructions may be stored in or transmitted from one computer-readable storage medium to another, for example, by wired (e.g., coaxial cable, optical fiber, digital Subscriber Line (DSL)), or wireless (e.g., infrared, wireless, microwave, etc.). The computer readable storage medium may be any available medium that can be accessed by a computer or a data storage device such as a server, data center, etc. that contains an integration of one or more available media. The usable medium may be a magnetic medium (e.g., floppy Disk, hard Disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., solid State Disk (SSD)), etc.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred, and that the acts are not necessarily all required in accordance with the embodiments of the application.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (e.g. ROM/RAM, magnetic disk, optical disk) comprising instructions for causing a terminal (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to perform the method according to the embodiments of the present application.
The embodiments of the present application have been described above with reference to the accompanying drawings, but the present application is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present application and the scope of the claims, which are to be protected by the present application.
Claims (17)
1. The utility model provides a crucible drive arrangement is applied to single crystal growing furnace, its characterized in that, be equipped with the crucible that bears the weight of the silicon material in the single crystal growing furnace, crucible drive arrangement includes: the device comprises a base, a crucible shaft assembly, a lifting rotating mechanism and a weighing sensor;
one end of the crucible shaft assembly is connected with the lifting and rotating mechanism, and the other end of the crucible shaft assembly stretches into the single crystal furnace to be connected with the crucible;
the lifting and rotating mechanism is arranged on the base and is used for driving the crucible shaft assembly to drive the crucible to lift or rotate to a preset position;
the weighing sensor is arranged on the lifting rotating mechanism and connected with the crucible shaft assembly, and the weighing sensor is used for measuring the weight of the silicon material in the crucible in real time through the crucible shaft assembly.
2. The crucible drive apparatus of claim 1, wherein the lifting and rotating mechanism includes: the device comprises a bracket, a screw rod, a lifting driving assembly and a rotary driving assembly;
the screw rod is respectively in transmission connection with the bracket and the lifting driving assembly, and the lifting driving assembly drives the screw rod to rotate so as to drive the bracket to lift;
the weighing sensor, the rotary driving assembly and the crucible shaft assembly are arranged on the support, the crucible shaft assembly is respectively connected with the rotary driving assembly and the weighing sensor, and the rotary driving assembly is used for driving the crucible shaft to rotate.
3. The crucible drive apparatus of claim 2, wherein the support includes a side plate and a bottom plate connected to each other, the side plate being movably connected to the lead screw and the base, respectively;
the crucible shaft assembly includes: the crucible shaft and the connecting seat are sleeved on the crucible shaft, one end of the crucible shaft is connected with the crucible, and the other end of the crucible shaft is connected with the rotary driving assembly;
the weighing sensor is clamped between the bottom plate and the connecting seat.
4. The crucible drive apparatus of claim 3, wherein the lifting and rotating mechanism further comprises: fine tuning the structure;
the fine adjustment structure is respectively connected with the side plate and the bottom plate and is used for driving the bottom plate to move along a first direction so as to adjust the distance between the bottom plate and the connecting seat;
the first direction is a direction parallel to the axis of the crucible shaft.
5. The crucible drive apparatus of claim 4, wherein the fine adjustment structure includes: fine tuning the screw;
the side plate is provided with a first adjusting part, and the first adjusting part is provided with a first adjusting hole;
the bottom plate is provided with a second adjusting part, and the second adjusting part is provided with a second adjusting hole opposite to the first adjusting hole;
The fine adjustment screw rod penetrates through the first adjusting hole and the second adjusting hole in sequence.
6. The crucible drive apparatus of claim 4, wherein the number of load cells is one or at least two;
the weighing sensors are arranged in one-to-one correspondence with the bottom plates, and each bottom plate and each side plate are correspondingly provided with one fine adjustment structure.
7. The crucible drive apparatus according to claim 6, wherein in the case where the number of the load cells is one, the load cells are coaxially disposed with the crucible shaft assembly;
and under the condition that the number of the weighing sensors is at least two, at least two weighing sensors are uniformly arranged along the circumferential direction of the crucible shaft assembly.
8. The crucible drive apparatus of claim 6, wherein the at least two load cells are located at the same level.
9. The crucible driving apparatus according to claim 3, wherein a side of the side plate, which is close to the crucible shaft, is provided with a limit rail, and an extending direction of the limit rail is parallel to an axis of the crucible shaft;
the connecting seat comprises: the crucible is characterized by comprising a crucible shaft, a crucible guide rail, a crucible cover, a limiting plate, a limiting guide rail, a limiting groove, a limiting guide rail and a limiting groove, wherein the crucible cover is arranged on the crucible cover;
The weighing sensor is clamped between the weighing connecting plate and the bottom plate.
10. A single crystal furnace, the single crystal furnace comprising: a furnace body, and a crucible drive apparatus as claimed in any one of claims 1 to 9;
the crucible driving device is arranged on the furnace body to drive the crucible in the furnace body to lift and/or measure the weight of the silicon material in the crucible in real time.
11. The silicon leakage detection method is applied to a single crystal furnace and is characterized in that the single crystal furnace comprises: a furnace body and a crucible driving device; the crucible driving device is arranged on the furnace body, and a crucible shaft assembly of the crucible driving device is connected with a weighing sensor; the silicon leakage detection method comprises the following steps:
acquiring an actual weight value of the silicon material in the crucible through the weighing sensor;
obtaining a theoretical weight value of the silicon material in the crucible;
calculating the difference value between the theoretical weight value and the actual weight value at the same moment;
and when the difference value meets a preset judging condition, determining that the silicon material in the crucible leaks.
12. The method according to claim 11, wherein determining that the silicon material in the crucible leaks when the difference satisfies a preset judgment condition comprises:
When the difference value is smaller than or equal to a first threshold value, determining that the silicon material in the crucible is subjected to primary leakage, and performing first silicon leakage operation treatment on the primary leakage;
when the difference value is greater than or equal to a second threshold value, determining that secondary leakage occurs in the silicon material in the crucible, and performing second silicon leakage operation treatment on the secondary leakage;
wherein the first threshold is less than the second threshold.
13. The method of claim 11, wherein the single crystal furnace further comprises: the upper transmission mechanism is provided with a weighing module; the step of obtaining the theoretical weight value of the silicon material in the crucible comprises the following steps:
acquiring a real-time weight value of the drawn silicon rod through the weighing module;
and calculating the theoretical weight value of the silicon material in the crucible according to the real-time weight value of the silicon rod.
14. The method of claim 11, wherein the step of obtaining a theoretical weight value of the silicon material in the crucible further comprises:
obtaining crystal pulling parameters in the crystal pulling process; the crystal pulling parameters include: the seed crystal rising rate and the diameter of the crystal pulling silicon rod;
and calculating the theoretical weight value of the silicon material in the crucible according to the crystal pulling parameter.
15. The method of claim 11, wherein the step of obtaining a theoretical weight value of the silicon material in the crucible further comprises:
acquiring the liquid level height value of the silicon material in the crucible;
and calculating the theoretical weight value of the silicon material through the liquid level height value and the inner diameter size of the crucible.
16. A single crystal furnace, the single crystal furnace comprising: the device comprises a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory are communicated with each other through the communication bus;
a memory for storing a computer program;
a processor for implementing the steps of the silicon leakage detection method according to any one of claims 11 to 15 when executing a program stored on a memory.
17. A computer-readable storage medium, having stored thereon a computer program which, when executed by a processor, causes the processor to perform the silicon leakage detection method according to any of claims 11 to 15.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210525984.XA CN117089920A (en) | 2022-05-13 | 2022-05-13 | Silicon leakage detection method, crucible driving device, single crystal furnace and computer readable storage medium |
| PCT/CN2023/076507 WO2023216668A1 (en) | 2022-05-13 | 2023-02-16 | Silicon leakage detection method, crucible driving device, single crystal furnace, and computer readable storage medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210525984.XA CN117089920A (en) | 2022-05-13 | 2022-05-13 | Silicon leakage detection method, crucible driving device, single crystal furnace and computer readable storage medium |
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| Publication Number | Publication Date |
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| CN117089920A true CN117089920A (en) | 2023-11-21 |
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| CN202210525984.XA Pending CN117089920A (en) | 2022-05-13 | 2022-05-13 | Silicon leakage detection method, crucible driving device, single crystal furnace and computer readable storage medium |
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| CN (1) | CN117089920A (en) |
| WO (1) | WO2023216668A1 (en) |
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| KR102244480B1 (en) * | 2019-07-22 | 2021-04-26 | 에스케이실트론 주식회사 | Driving unit measuring apparatus and silicon single crystal growing apparatus having same |
| CN111006824B (en) * | 2019-12-18 | 2023-02-10 | 银川隆基硅材料有限公司 | Silicon leakage detection method and device for single crystal furnace and storage medium |
| CN114318506B (en) * | 2021-12-14 | 2022-12-06 | 连城凯克斯科技有限公司 | Single crystal growing furnace crucible promotes lower axle weighing device |
| CN217733338U (en) * | 2022-05-13 | 2022-11-04 | 隆基绿能科技股份有限公司 | Crucible driving device and single crystal furnace |
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- 2022-05-13 CN CN202210525984.XA patent/CN117089920A/en active Pending
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