CN117082420A

CN117082420A - Electronic device, sounding module, touch module and intelligent terminal

Info

Publication number: CN117082420A
Application number: CN202311166999.2A
Authority: CN
Inventors: 李芳庆; 颜嘉甫
Original assignee: Yinwei Hong Kong Ltd
Current assignee: Yinwei Hong Kong Ltd
Priority date: 2023-09-08
Filing date: 2023-09-08
Publication date: 2023-11-17

Abstract

The disclosure relates to an electronic device, a sounding module, a touch module and an intelligent terminal. The electronic device includes: a conductive aperture plate; the first piezoelectric film layer is stacked on one side of the conductive aperture plate, and the surface of the first piezoelectric film layer facing the conductive aperture plate continuously carries first static charges; the second piezoelectric film layer is stacked on one side of the conductive aperture plate, which is away from the first piezoelectric film layer, and the surface of the second piezoelectric film layer, which faces the conductive aperture plate, is continuously provided with second static charges, and the polarities of the second static charges and the first static charges are opposite; the insulating columns are arranged between the first piezoelectric film layer and the conductive opening plate, and part of the insulating columns are arranged between the second piezoelectric film layer and the conductive opening plate; the first conductive layer is arranged on the surface of the first piezoelectric film layer, which is away from the conductive aperture plate; the second conductive layer is arranged on the surface of the second piezoelectric film layer, which is away from the second conductive layer.

Description

Electronic device, sounding module, touch module and intelligent terminal

Technical Field

The disclosure relates to the technical field of terminals, and in particular relates to an electronic device, a sounding module, a touch module and an intelligent terminal.

Background

In general, the electronic devices have only a single implementation function, for example, the structure of the speaker cannot be used as other functional modules by adjusting the introduced electrical signals, so that a special single-device architecture is required for a large number of electronic devices in the terminal equipment, and architecture compatibility cannot be realized.

Disclosure of Invention

The disclosure provides an electronic device, a sounding module, a touch module and an intelligent terminal, which are used for solving the defects in the related art.

According to a first aspect of embodiments of the present disclosure, there is provided an electronic device comprising:

a conductive aperture plate;

a first piezoelectric film layer stacked on one side of the conductive aperture plate, the first piezoelectric film layer continuously carrying a first electrostatic charge toward the surface of the conductive aperture plate;

the second piezoelectric film layer is stacked on one side of the conductive aperture plate, which is away from the first piezoelectric film layer, and the surface of the second piezoelectric film layer, which faces the conductive aperture plate, is continuously provided with a second static charge, and the polarity of the second static charge is opposite to that of the first static charge;

the insulating columns are arranged between the first piezoelectric film layer and the conductive opening plate, and part of the insulating columns are arranged between the second piezoelectric film layer and the conductive opening plate;

The first conductive layer is arranged on the surface of the first piezoelectric film layer, which is away from the conductive aperture plate;

the second conductive layer is arranged on the surface, away from the second conductive layer, of the second piezoelectric film layer.

According to a second aspect of embodiments of the present disclosure, there is provided a sound emitting module comprising an electronic device according to any one of the embodiments described above.

According to a second aspect of embodiments of the present disclosure, there is provided a touch module, including an electronic device according to any one of the embodiments described above.

According to a second aspect of embodiments of the present disclosure, there is provided an intelligent terminal, including an electronic device according to any one of the embodiments described above.

The technical scheme provided by the disclosed embodiment can include the following beneficial effects:

as can be seen from the above embodiments, in the electronic device of the present disclosure, the electrical wires connected to the conductive aperture plate, the first conductive layer and the second conductive layer may be adjusted, so that the electronic device may exhibit different usage functions, and achieve architecture compatibility of the electronic device; and the polarity of the first electrostatic charge carried by the first piezoelectric film layer and the polarity of the second electrostatic charge carried by the second piezoelectric film layer in the electronic device are opposite, so that the neutrality inside the electronic device is kept, and the electric shock caused by pressure difference is avoided.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.

Fig. 1 is a schematic cross-sectional view of an electronic device, shown according to an example embodiment.

Fig. 2 is an exploded schematic view of an electronic device, shown according to an exemplary embodiment.

Fig. 3 is a schematic view of a partial structure at a of the electronic device in fig. 2.

Fig. 4 is an exploded schematic view of another electronic device shown according to an exemplary embodiment.

Fig. 5 is an exploded schematic view of yet another electronic device shown according to an exemplary embodiment.

Fig. 6 is an exploded view of the electronic device of fig. 5 at another angle.

Fig. 7 is a diagram showing a positional relationship between an insulation post and a first insulation ring according to an exemplary embodiment.

Detailed Description

Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples are not representative of all implementations consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with some aspects of the present disclosure as detailed in the accompanying claims.

The terminology used in the present disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used in this disclosure and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any or all possible combinations of one or more of the associated listed items.

It should be understood that although the terms first, second, third, etc. may be used in this disclosure to describe various information, these information should not be limited to these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the present disclosure. The word "if" as used herein may be interpreted as "at … …" or "at … …" or "responsive to a determination", depending on the context.

Fig. 1 is a schematic cross-sectional view of an electronic device according to an exemplary embodiment, fig. 2 is an exploded schematic view of an electronic device according to an exemplary embodiment, and fig. 3 is a schematic view of a partial structure at a of the electronic device in fig. 2. As shown in fig. 1 to 3, the electronic device includes a conductive aperture plate 1, a first piezoelectric film layer 2, a second piezoelectric film layer 3, an insulating column 4, a first conductive layer 5, and a second conductive layer 6. The first conductive layer 5 is stacked on one side of the conductive aperture plate 1, and the surface of the first piezoelectric film layer 2 facing the conductive aperture plate 1 continuously carries a first electrostatic charge, the second piezoelectric film layer 3 is stacked on one side of the conductive aperture plate 1 facing away from the first piezoelectric film layer 2, the surface of the second piezoelectric film layer 3 facing the conductive aperture plate 1 continuously carries a second electrostatic charge, the polarity of the second electrostatic charge is opposite to that of the first electrostatic charge, such as shown in fig. 2, the surface of the second piezoelectric film layer 3 continuously carries a positive charge, and the surface of the first piezoelectric film layer 2 continuously carries a negative charge. Alternatively, the surface of the first piezoelectric film layer 2 may be continuously positively charged, and the surface of the second piezoelectric film layer 3 may be continuously negatively charged. In which the surface is permanently charged with the first electrostatic charge or the second electrostatic charge, it is understood that the first electrostatic charge and the second electrostatic charge may be permanently disposed on the corresponding surfaces with a small loss of electrostatic charge. The electronic device may be formed by a semiconductor fabrication process to form a microelectronic device, or may be formed by other processes, which the present disclosure is not limited to.

A part of insulating column 4 is arranged between the first piezoelectric film layer 2 and the conductive aperture plate 1, for example, two ends of the insulating column 4 can be respectively contacted with the first piezoelectric film layer 2 and the conductive aperture plate 1 so as to realize insulation arrangement between the first piezoelectric film layer 2 and the conductive aperture plate 1 through the insulating column 4; similarly, a portion of the insulating column 4 is also provided between the second piezoelectric film layer 3 and the conductive aperture plate 1 to achieve an insulating arrangement between the second piezoelectric film layer 3 and the conductive aperture plate 1. The insulating column 4 may be an insulating double sided tape, so that the first piezoelectric film layer 2 and the conductive aperture plate 1 may be bonded, or the second piezoelectric film layer 3 and the conductive aperture plate 1 may be bonded, respectively, while insulation is achieved. The first conductive layer 5 is arranged on the surface of the first piezoelectric film layer 2, which is away from the conductive aperture plate 1, and the second conductive layer 6 is arranged on the surface of the second piezoelectric film layer 3, which is away from the conductive aperture plate 1. Of course, at least part of the perforations of the conductive aperture plate 1 are not shielded by the insulating columns 4 in order to keep the air flow inside the electronic device.

Based on the above, one of the first conductive layer 5 and the conductive aperture plate 1 can be grounded, and the other is connected with an electric signal, so that the first piezoelectric film layer 2 is driven to vibrate by utilizing the principle that like charges attract and opposite charges repel each other; similarly, one of the second conductive layer 6 and the conductive aperture plate 1 can be grounded, the other is connected with an electric signal, and the second piezoelectric film layer 3 is driven to vibrate by utilizing the principle that like charges attract each other and opposite charges repel each other, so that the loudspeaker function of the electronic device is realized. Wherein, only one of the first piezoelectric film layer 2 and the second piezoelectric film layer 3 can vibrate to sound at the same time, or synchronous vibration in the first piezoelectric film layer 2 and the second piezoelectric film layer 3 can also vibrate to sound at the same time, it can be understood that the first piezoelectric film layer 2 and the second piezoelectric film layer 3 need to vibrate in the same direction, so that the first piezoelectric film layer 2 and the second piezoelectric film layer 3 shown in fig. 1 need to be subjected to upward acting force or downward acting force at the same time, and therefore, incapacitation caused by mutual offset between internal acting forces of electronic devices is avoided. When the first piezoelectric film layer 2 and the second piezoelectric film layer 3 are used as the diaphragms of the loudspeaker modules, the polarities of the first static charge carried by the first piezoelectric film layer 2 and the second static charge carried by the second piezoelectric film layer 3 are opposite, so that one of the first conductive layer 5 and the conductive aperture plate 1 connected with an electric signal and one of the second conductive layer 6 and the conductive aperture plate 1 connected with an electric signal can be connected to the same signal end, signals can be respectively input through the same signal end, static charges with opposite polarities carried by the first piezoelectric film layer 2 and the second piezoelectric film layer 3 can be utilized, difference of positive and negative signals can be realized inside, and the purpose that the input signals are subjected to the same direction acting force by the first piezoelectric film layer 2 and the second piezoelectric film layer 3 can be realized without arranging special difference devices.

Alternatively, the conductive aperture plate 1 is grounded, and the first conductive layer 5 and the second conductive layer 6 may also be used as signal output layers respectively, for example, when the side of the first piezoelectric film layer 2 facing away from the conductive aperture plate 1 is pressed, an induced current is generated in the first conductive layer 5 due to the piezoelectric effect, and the output induced current can be used for realizing touch detection, for example, it can be known that an external object is currently in contact with the electronic device or a panel provided with the electronic device; of course, when the side of the second piezoelectric film layer 3 facing away from the conductive aperture plate 1 is pressed, an induced current is generated in the second conductive layer 6 due to the piezoelectric effect, and touch detection can be realized by the output induced current as well.

As can be seen from the above embodiments, in the electronic device of the present disclosure, various functions of the electronic device can be realized by adjusting the electrical wires connected to the conductive aperture plate 1, the first conductive layer 5 and the second conductive layer 6, and the polarity of the first electrostatic charge carried by the first piezoelectric film layer 2 and the polarity of the second electrostatic charge carried by the second piezoelectric film layer 3 in the electronic device are opposite, so that it is beneficial to keep neutrality inside the electronic device and avoid electric shock caused by pressure difference; the first electrostatic charge carried by the first piezoelectric film layer 2 is located on the surface away from the first conductive layer 5, the second electrostatic charge carried by the second piezoelectric film layer 3 is located on the surface away from the second conductive layer 6, and the second electrostatic charge is relatively closer to the inside of the electronic device, so that electrostatic charge escape caused by the fact that a subsequent user touches the upper surface of the electronic device is reduced, the electrostatic charge amounts of the surfaces of the first piezoelectric film layer 2 and the second piezoelectric film layer 3 are maintained, and the service life of the electronic device is prolonged. Moreover, the inside of the electronic device can provide space for the flow of air flow through the holes on the conductive perforated plate 1 and the gaps between the insulating columns 4, thereby being beneficial to improving the air permeability of the electronic device.

In some embodiments, the first piezoelectric film layer 2 may be a material with better adsorption performance to positive charges, and the second piezoelectric film layer 3 may be a material with better adsorption performance to negative charges; alternatively, the second piezoelectric film layer 3 may be a material having a better positive charge adsorption property, and the first piezoelectric film layer 2 may be a material having a better negative charge adsorption property.

In other embodiments, at least one of the first piezoelectric film layer 2 and the second piezoelectric film layer 3 may be an electret piezoelectric film layer. For example, the electret piezoelectric film layer may be a permanent charged film layer formed by a base layer through a charging process, taking a first electrostatic charge as an example, the first piezoelectric film layer 2 may be a permanent charged film layer formed by a base layer through a charging process, taking a second electrostatic charge as an example, and the second piezoelectric film layer 3 may be a permanent charged film layer formed by a polymer through a charging process. The charging process may be a high-voltage corona process or a polarization process, and the surfaces of the first piezoelectric film layer 2 and the second piezoelectric film layer 3 can be kept with a certain charge for a long period of time and are not attenuated any more by the high-voltage corona process or the polarization process, and the charging process for the base layer can be considered to be completed at this time, so that the first piezoelectric film layer 2 and the second piezoelectric film layer 3 with static charges are obtained.

In order to capture static charges, the surface or the interior of the base layer is provided with nano-scale holes, the holes can be formed by the polymer at the forming stage, or the holes can be formed by the related process for the base layer later, for example, the nano-scale holes can be formed by the nano-micro pore forming process or the supercritical foaming process for the base layer, the area of the surface of the polymer can be increased through the nano-scale holes, and the surface of the base layer can be beneficial to keeping a larger amount of static charges. Wherein the base layer may be a material with permanently high charge characteristics. For example, the base layer may be a polymer base layer of a fluorine-containing material such as polytetrafluoroethylene, polyvinylidene fluoride and perfluoroethylene propylene copolymer. For another example, the substrate may be a semiconductor material having piezoelectric properties, such as silicon oxide, silicon dioxide, or silicon nitride.

The waterproof coefficient of the base material is higher than a set value and the air permeability index is higher than the set value, for example, when polytetrafluoroethylene, polyvinylidene fluoride and perfluoroethylene propylene copolymer are adopted as the polymer, the waterproof and air permeability performances can be simultaneously satisfied. Because the first piezoelectric film layer 2 and the second piezoelectric film layer 3 are positioned at the positions relatively outside, the center part of the electronic device is kept dry, meanwhile, the first piezoelectric film layer 2 and the second piezoelectric film layer 3 are made of polymers with better air permeability indexes, and the gaps between the openings of the conductive perforated plate 1 and the insulating columns 4 are combined, so that internal air flow can smoothly flow when the electronic device is pressed or vibrated, and damage caused by internal pressurization of the electronic device is avoided.

For example, the thickness of the first piezoelectric film layer 2 is greater than or equal to 0.1um and less than or equal to 2mm, for example, when depositing a semiconductor compound film layer in a semiconductor manufacturing process to obtain a substrate, a thinner first piezoelectric film layer 2, such as 0.15um, 0.2um, or 0.4um, etc., may be deposited; when the base material is formed using a fluorine-containing polymer, the thickness of the first piezoelectric film layer 2 may be relatively thick, for example, may be 50um, 60um, or the like; similarly, the thickness of the second piezoelectric film layer 3 is greater than or equal to 0.1um and less than or equal to 2mm, for example, when depositing a semiconductor compound film layer in a semiconductor manufacturing process to obtain a substrate, a thinner second piezoelectric film layer 3, such as 0.15um, 0.2um, or 0.4um, etc., may be deposited; when the base material is formed of a fluorine-containing polymer, the thickness of the second piezoelectric film layer 3 may be 50um, 60um, or the like, and the thicknesses of the first piezoelectric film layer 2 and the second piezoelectric film layer 3 may be equal or unequal, specifically designed as needed.

The electrostatic voltage of the first piezoelectric film layer 2 may be in a range between 10V and 1200V, wherein the electrostatic voltage requirement on the first piezoelectric film layer 2 is reduced due to the thinner thickness of the first piezoelectric film layer 2 when the semiconductor material having piezoelectric characteristics is charged through the semiconductor manufacturing process, the electrostatic voltage carried by the first piezoelectric film layer 2 may be relatively low, for example, may be as low as 10V, or 20V, and the electrostatic voltage may be relatively high, for example, may be 500V, 1000V, or the like when the electret piezoelectric film layer is formed using the fluorine-containing polymer.

The electrostatic voltage of the second piezoelectric film layer 3 may be in the range of 10V-1200V, wherein the electrostatic voltage requirement on the first piezoelectric film layer 2 is reduced due to the thinner thickness of the first piezoelectric film layer 2 when the semiconductor material having piezoelectric characteristics is charged through the semiconductor manufacturing process, the electrostatic voltage carried by the first piezoelectric film layer 2 may be relatively low, such as may be as low as 10V, or 20V, and the electrostatic voltage carried may be relatively high, such as may be 500V, 1000V, or the like when the electret piezoelectric film layer is formed using the fluorine-containing polymer; the electrostatic voltages between the first piezoelectric film layer 2 and the second piezoelectric film layer 3 may be equal or unequal, that is, the electrostatic charge amounts carried by the first piezoelectric film layer 2 and the second piezoelectric film layer 3 may be equal or unequal, which may be specifically designed as required.

In some embodiments, still as shown in fig. 2 and 3, the electrical device comprises a first conductive electrode 7 and a second conductive electrode 8, the first conductive electrode 7 is disposed on a side of the first conductive layer 5 facing away from the conductive aperture plate 1, the second conductive electrode 8 is disposed on a side of the second conductive layer 6 facing away from the conductive aperture plate 1, a third conductive electrode 9 can be led out from the conductive aperture plate 1, wherein the third conductive electrode 9 can be connected to an audio signal terminal, and the first conductive electrode 7 and the second conductive electrode 8 can be respectively grounded. Based on this, when a negative voltage is introduced through the third conductive electrode 9, the conductive aperture plate 1 and the first piezoelectric film layer 2 repel each other, generating a first force pushing the first piezoelectric film layer 2 to move upward, the conductive aperture plate 1 and the second piezoelectric film layer 3 attract each other, generating a second force pulling the second piezoelectric film layer 3 to move upward, and the first piezoelectric film layer 2 and the second piezoelectric film layer 3 can be pushed to vibrate synchronously by the action of the first force and the second force, thereby sounding. And through the combined action of first effort and second effort, can increase the play vibrating force, reduce the play difficulty of vibrating, audio signal input can direct input signal of telecommunication simultaneously, need not to set up the device and carry out the difference.

Alternatively, the first conductive electrode 7 and the second conductive electrode 8 may be connected to the same audio signal input end, and the third conductive electrode 9 is grounded, so that a first acting force may be generated by introducing an electrical signal between the first conductive electrode 7 and the first conductive layer 5, and a first acting force may be generated between the first conductive layer 5 and the first piezoelectric film layer 2, and an electrical signal may be introduced between the second conductive electrode 8 and the second conductive layer 6, so that a second acting force may be generated between the second conductive layer 6 and the second piezoelectric film layer 3, so as to realize synchronous vibration of the first piezoelectric film layer 2 and the second piezoelectric film layer 3.

The first conductive electrode 7 may be disposed at any position of the first conductive layer 5, such as a middle portion, for example, parallel to the edge of the first conductive layer 5, or disposed obliquely with respect to the edge of the first conductive layer 5, etc., and may be specifically designed as required. The second conductive electrode 8 may be disposed at any position of the second conductive layer 6, such as in the middle, for example, parallel to the edge of the second conductive layer 6, or inclined with respect to the edge of the second conductive layer 6, etc., and may be specifically designed as desired.

In the foregoing embodiments, the synchronous action of the first acting force and the second acting force is taken as an example, and in other embodiments, when the force is sufficient, the first acting force or the second acting force may act to drive the synchronous vibration of the first piezoelectric film layer 2 and the second piezoelectric film layer 3, in other words, only the first conductive electrode 7 or the second conductive electrode 8 may be provided. As shown in fig. 2, the number of the first conductive electrodes 7 and the second conductive electrodes 8 may be one, in other embodiments, the number of the first conductive electrodes 7 may be plural, the number of the second conductive electrodes 8 may be plural, and the number of the first conductive electrodes 7 and the second conductive electrodes 8 may be equal or unequal. Compared with the scheme of arranging a single first conductive electrode 7, the scheme of arranging a plurality of first conductive electrodes 7 is beneficial to improving the consistency of the surface resistance of the first conductive layer 5, and the sound-raising effect of the electronic device is better; similarly, the arrangement of the plurality of second conductive electrodes 8 is advantageous in improving the uniformity of the surface resistance of the second conductive layer 6, and the speaker effect of the electronic device is better than the arrangement of the single second conductive electrode 8. The audio signal input end can input audio alternating current signals, static charges with different polarities are arranged on the surfaces of the first piezoelectric film layer 2 and the second piezoelectric film layer 3, the audio alternating current signals do not need to be differentiated outside an electronic device later, the audio signal input end can directly input the audio alternating current signals, and the audio signal input end is beneficial to simplifying a matched circuit by differentiating the static charges with different polarities of the first piezoelectric film layer 2 and the second piezoelectric film layer 3.

In some embodiments, as shown in fig. 4, the electronic device may include a single upper metal electrode 10, where the single upper metal electrode 10 is disposed along any edge of the first conductive layer 5, that is, the single upper metal electrode 10 is disposed parallel to any edge of the first conductive layer 5, and the conductive aperture plate 1 leads out the third conductive electrode 9, and then when the electronic device is used as a speaker device, one of the upper metal electrode 10 and the third conductive electrode 9 may be connected to an audio signal input terminal, and the other may be grounded, so as to drive the first piezoelectric film layer 2 and the second piezoelectric film layer 3 to vibrate; when the electronic device is used as a pressure sensing device, the third conductive electrode 9 is grounded, the upper metal electrode 10 is used as an output electrode, when the first piezoelectric film layer 2 is pressed or touched, a voltage difference is generated due to a piezoelectric effect, and meanwhile, a relative impedance is generated due to a distance between a pressed point and the upper metal electrode 10, so that an induced current can be generated at the upper metal electrode 10, and whether the current electronic device is pressed or touched can be determined based on the output induced current.

And since the larger the pressure is, the larger the generated voltage difference is, it can be determined whether the current pressure is increased or decreased according to the trend of the induced current. Alternatively, an integral algorithm may be used to obtain a specific pressure value, alternatively, a mapping relationship between pressure and induced current may be obtained through a test and stored in a master control terminal configuring the electronic device, and a subsequent master control terminal may obtain a pressure value according to the mapping relationship.

It will be appreciated that when the induced current is a transient current generated when the first piezoelectric film layer 2 is pressed, no current is generated in both the continuously pressed state and the continuously unpressed state of the first piezoelectric film layer 2, and therefore, in order to distinguish the two states, in some embodiments, a small bias voltage V may be input to the conductive aperture plate 1 through the third conductive electrode 9, in the continuously pressed state, the voltage at the moment of pressing is v+Δv, where Δv is a differential pressure generated due to the piezoelectric effect of the first piezoelectric film layer 2 when pressed, and the bias voltage V is maintained in the continuously unpressed state, based on which the two states can be distinguished. Alternatively, the first conductive layer 5 and the second conductive layer 6 may be equivalent to a capacitance, a constant capacitance value is maintained in an unpressurized state, and when the first piezoelectric film layer 2 is pressurized, a distance between the first conductive layer 5 and the second conductive layer 6 is changed, and thus the capacitance value is changed, so that the two states can be distinguished based on the change in the capacitance value. The above description of the determination schemes of the continuously stressed state and the continuously unstressed state will be made by taking the first piezoelectric film layer 2 as an example, and in practice, reference may be made to the above embodiments for determining the continuously stressed state and the continuously unstressed state of the second piezoelectric film layer 3.

In other embodiments, as shown in fig. 5, the conductive aperture plate 1 may lead out a third conductive electrode 9, and the electronic device includes a plurality of upper metal electrodes 10, each upper metal electrode 10 may be disposed along at least one edge of the first conductive layer 5, and when any upper metal electrode 10 is disposed along two or more edges of the first conductive layer 5, the upper metal electrode 10 may be bent adaptively according to the bending of the first conductive layer 5. At least one upper metal electrode is provided at each edge of the first conductive layer 5, and the number of edges corresponding to a plurality of upper metal electrodes provided at the same edge of the first conductive layer 5 increases in the direction from inside to outside of the first conductive layer 5, that is, in the direction indicated by arrow a in fig. 5.

For example, taking the first conductive layer 5 as a quadrangle in fig. 5 as an example, at least one upper metal electrode 10 is disposed at each edge of the first conductive layer 5, for example, the first conductive layer 5 includes a first edge 51, a second edge 52, a third edge 53 and a fourth edge 54, where the first edge 51 and the third edge 53 are disposed opposite to each other, and the second edge 52 and the fourth edge 54 are disposed opposite to each other. The upper metal electrode 10 includes a first metal electrode 101, a second metal electrode 102, a third metal electrode 103, and a fourth metal electrode 104, wherein the first metal electrode 101 is disposed along the first edge 51, the second metal electrode 102 is disposed along the first edge 51 and the second edge 52, and the second metal electrode 102 is disposed inward relative to the first metal electrode 101 at the first edge 51; the third metal electrode 103 is disposed along the third edge 53 and the fourth edge 54, the fourth metal electrode 104 is disposed along the fourth edge 54, and at the third edge 53, the fourth metal electrode 104 is disposed inward with respect to the third metal electrode 103; that is, the design principle that the number of edges corresponding to a plurality of upper metal electrodes arranged at the same edge of the first conductive layer 5 is increased in the direction from inside to outside of the first conductive layer 5, that is, in the direction indicated by an arrow a in fig. 5 is satisfied. The first metal electrode 101, the second metal electrode 102, the third metal electrode 103 and the fourth metal electrode 104 are led out from the first edge, so that the plurality of upper metal electrodes 10 are led out from the same edge of the same first conductive layer 5, the wiring difficulty of the subsequent peripheral circuit can be reduced, and the mass production of electronic devices is facilitated. Alternatively, the first metal electrode 101, the second metal electrode 102, the third metal electrode 103 and the fourth metal electrode 104 may be led out together at the third edge 53.

It should be noted that, an arrangement manner of the upper metal electrode 10 is illustrated, and in other embodiments, other arrangements manners of the upper metal electrode 10 on the first conductive layer 5 may be adopted, as long as each edge of the first conductive layer 5 is provided with the upper metal electrode 10, and the number of edges corresponding to a plurality of upper metal electrodes disposed at the same edge of the first conductive layer 5 increases in the direction from inside to outside of the first conductive layer 5.

As another example, the number of upper metal electrodes 10 is equal to the number of edges of the first conductive layer 5. Taking the first conductive layer 5 as a quadrilateral structure as an example, the first conductive layer 5 includes a first edge 51, a second edge 52, a third edge 53 and a fourth edge 54, the upper metal electrode 10 may also include a first metal electrode 101, a second metal electrode 102, a third metal electrode 103 and a fourth metal electrode 104, and the first edge 51, the second edge 52, the third edge 53 and the fourth edge 54 and the first metal electrode 101, the second metal electrode 102, the third metal electrode 103 and the fourth metal electrode 104 may be disposed in a one-to-one correspondence. Here, the number of the upper metal electrodes 10 and the number of the edges of the first conductive layer 5 are equal, and one-to-one correspondence is described as an example, and in other embodiments, the number of the upper metal electrodes 10 and the number of the edges of the first conductive layer 5 are equal, but the same upper metal electrode 10 may also be disposed corresponding to a plurality of edges of the first conductive layer 5, which is not limited in this disclosure.

In the embodiment of fig. 5, taking the first conductive layer 5 as an example of a quadrilateral structure, the first conductive layer 5 may also have other polygonal structures, and the arrangement manner of the upper metal electrode 10 may also refer to the foregoing embodiment.

It will be appreciated that in a polygonal structure, after the distance from any point within the polygon to each edge is determined, the position of that point in the polygonal structure can then be uniquely determined. Based on this principle, by providing the upper metal electrode 10 at each edge of the first conductive layer 5, the distance from any point to the upper metal electrode 10 at each edge of the first conductive layer 5 can be made to be a relative impedance, so that a plurality of induced currents are generated when being pressed, and the position of the pressed point in the polygonal structure can be obtained by combining the plurality of current calculations, that is, the current pressed point or touch point can be obtained. If each edge corresponds to a plurality of upper metal electrodes, the number of edges corresponding to the plurality of upper metal electrodes disposed at the same edge of the first conductive layer 5 is gradually increased, so that the outermost layer at the edge where the plurality of upper metal electrodes 10 are disposed may be the upper metal electrode 10 corresponding to the edge only, and the induced current generated by the upper metal electrode 10 of the outermost layer may be used to determine the touch position of the pressed point, so as to avoid the touch detection error caused by the induced current generated by the same upper metal electrode 10 serving as the plurality of edges.

In the above embodiments, when the electronic device includes a plurality of upper metal electrodes 10, the plurality of upper metal electrodes 10 may be led out from the same side edge of the first conductive layer 5, thereby reducing the difficulty in configuring the peripheral circuit. For example, the electronic device may further include a circuit board located outside the first conductive layer 5, where the circuit board may include a plurality of contacts, each of which is respectively electrically connected to each of the upper metal electrodes 10, and since the plurality of upper metal electrodes 10 are led out from the same edge of the first conductive layer 5, the circuit board may be configured in a strip shape, so that a hard circuit board may be used, thereby increasing the type selection range of the kit.

In some embodiments, the plurality of upper metal electrodes 10 may also be led out from a plurality of edges of the first conductive layer 5, and the electronic device further includes a plurality of first transmission lines, where the plurality of first transmission lines and the plurality of upper metal electrodes 10 are connected in a one-to-one correspondence, and then connection with an external circuit board may be achieved through the plurality of first transmission lines. Of course, when the plurality of upper metal electrodes 10 are led out from the same edge of the first conductive layer 5, signal derivation may be achieved by one-to-one correspondence connection between the plurality of first transmission lines and the plurality of upper metal electrodes 10. The first transmission line may be located partly on the surface of the first conductive layer 5 or may be located entirely outside the first conductive layer 5, in particular adaptively designed according to the arrangement of the upper metal electrode 10.

The ratio of the material resistivity of the first conductive layer 5 to the material resistivity of the upper metal electrode 10 is greater than or equal to 10, so as to facilitate generating a large enough induced current and to facilitate improving the touch detection accuracy. The upper metal electrode 10 may be a first conductive glue line, for example, the first conductive glue line may be a gold conductive glue line, a silver conductive glue line, a copper conductive glue line, a carbon conductive glue line or a carbon nanotube conductive glue line.

In the embodiment illustrated in fig. 5, the voltage control and touch detection are realized by disposing the metal electrode 10 on the surface of the first conductive layer 5, and as the robot technology advances, the demand for the tactile feedback of the robot is gradually increased, and the tactile feedback can be realized by the electronic device provided in the disclosure.

For example, as shown in fig. 6, the electronic device includes a plurality of lower metal electrodes 11, each lower metal electrode 11 may be disposed along at least one edge of the second conductive layer 6, and when any lower metal electrode 11 is disposed along two or more edges of the second conductive layer 6, the lower metal electrode 11 may be adaptively bent according to the bending of the second conductive layer 6. At least one lower metal electrode is provided at each edge of the second conductive layer 6, and the number of edges corresponding to a plurality of lower metal electrodes provided at the same edge of the second conductive layer 6 increases in the direction from inside to outside of the second conductive layer 6, that is, in the direction indicated by arrow B in fig. 6.

For example, taking the second conductive layer 6 as a quadrangle in fig. 6 as an example, at least one lower metal electrode 11 is disposed at each edge of the second conductive layer 6, for example, the second conductive layer 6 includes a fifth edge 61, a sixth edge 62, a seventh edge 63, and a fourth edge 54, where the fifth edge 61 and the seventh edge 63 are disposed opposite to each other, and the sixth edge 62 and the fourth edge 54 are disposed opposite to each other. The lower metal electrode 11 includes a fifth metal electrode 111, a sixth metal electrode 112, a seventh metal electrode 113, and an eighth metal electrode 114, wherein the fifth metal electrode 111 is disposed along the fifth edge 61, the sixth metal electrode 112 is disposed along the fifth edge 61 and the sixth edge 62, and the sixth metal electrode 112 is disposed inward with respect to the fifth metal electrode 111 at the fifth edge 61; the seventh metal electrode 113 is disposed along the seventh edge 63 and the eighth edge 64, the eighth metal electrode 114 is disposed along the eighth edge 64, and at the eighth edge 64, the eighth metal electrode 114 is disposed inward with respect to the seventh metal electrode 113; that is, the design principle that the number of edges corresponding to the plurality of lower metal electrodes arranged at the same edge of the second conductive layer 6 is increased in the direction from inside to outside of the second conductive layer 6, that is, in the direction indicated by an arrow B in fig. 6, is satisfied. The fifth metal electrode 111, the sixth metal electrode 112, the seventh metal electrode 113 and the eighth metal electrode 114 are led out from the first edge, so that the plurality of lower metal electrodes 11 are led out from the same edge of the same second conductive layer 6, which can reduce the wiring difficulty of the subsequent peripheral circuit and is beneficial to the mass production of electronic devices. Optionally, the fifth metal electrode 111, the sixth metal electrode 112, the seventh metal electrode 113 and the eighth metal electrode 114 may also be collected at the seventh edge 63 and led out.

It should be noted that, an arrangement manner of the lower metal electrodes 11 is illustrated, and in other embodiments, other arrangements manners of the lower metal electrodes 11 on the second conductive layer 6 may be adopted, as long as each edge of the second conductive layer 6 is provided with the lower metal electrodes 11, and the number of edges corresponding to the plurality of lower metal electrodes disposed at the same edge of the second conductive layer 6 increases in the direction from inside to outside of the second conductive layer 6.

As another example, the number of lower metal electrodes 11 and the number of edges of the second conductive layer 6 are equal. Taking the second conductive layer 6 as a quadrilateral structure as an example, the second conductive layer 6 includes a fifth edge 61, a sixth edge 62, a seventh edge 63, and a fourth edge 54, the lower metal electrode 11 may also include a fifth metal electrode 111, a sixth metal electrode 112, a seventh metal electrode 113, and an eighth metal electrode 114, and the fifth edge 61, the sixth edge 62, the seventh edge 63, and the fourth edge 54 may be disposed in one-to-one correspondence with the fifth metal electrode 111, the sixth metal electrode 112, the seventh metal electrode 113, and the eighth metal electrode 114. Here, the number of the lower metal electrodes 11 and the number of the edges of the second conductive layer 6 are equal, and one-to-one correspondence is described as an example, and in other embodiments, the number of the lower metal electrodes 11 and the number of the edges of the second conductive layer 6 are equal, but the same lower metal electrode 11 may also be disposed corresponding to a plurality of edges of the second conductive layer 6, which is not limited in this disclosure.

In the embodiment of fig. 6, taking the second conductive layer 6 as an example of a quadrilateral structure, the second conductive layer 6 may also have other polygonal structures, and the arrangement of the lower metal electrode 11 may also refer to the foregoing embodiment.

It will be appreciated that in a polygonal structure, after the distance from any point within the polygon to each edge is determined, the position of that point in the polygonal structure can then be uniquely determined. Based on this principle, by providing the lower metal electrode 11 at each edge of the second conductive layer 6, the distance from any point to the lower metal electrode 11 at each edge of the second conductive layer 6 can be made to be a relative impedance, so that a plurality of induced currents are generated when being pressed, and the position of the pressed point in the polygonal structure can be obtained by combining the plurality of current calculations, that is, the current pressed point or touch point can be obtained. In the technical solution of fig. 6, one of the first conductive layer 5 and the second conductive layer 6 may be in contact with the hard body of the robot, and the other may be disposed near the surface of the electronic device for touch control. Therefore, the plurality of upper metal electrodes 10 arranged on the first conductive layer 5 can output a group of induced current data, the plurality of lower metal electrodes 11 arranged on the second conductive layer 6 can output a group of induced current data, and the comparison of the hard touch feeling and other touch feeling can be realized through the comparison of the two groups of current data, so that the robot can obtain the touch feeling of the current touch object to form touch feeling consciousness. If each edge corresponds to a plurality of lower metal electrodes, the number of edges corresponding to the plurality of lower metal electrodes disposed at the same edge of the second conductive layer 6 is gradually increased, so that the outermost layer at the edge where the plurality of lower metal electrodes 11 are disposed may be the lower metal electrode 11 corresponding to the edge only, and the induced current generated by the lower metal electrode 11 of the outermost layer may be used to determine the touch position of the pressed point, so as to avoid the touch detection error caused by the induced current generated by the same lower metal electrode 11 serving as the plurality of edges.

In the above embodiments, when the electronic device includes a plurality of lower metal electrodes 11, the plurality of lower metal electrodes 11 may be led out from the same side edge of the second conductive layer 6, thereby reducing the difficulty in configuring the peripheral circuit. For example, the electronic device may further include a circuit board located outside the second conductive layer 6, where the circuit board may include a plurality of contacts, each of which is respectively electrically connected to each of the lower metal electrodes 11, and since the plurality of lower metal electrodes 11 are led out from the same edge of the second conductive layer 6, the circuit board may be configured in a strip shape, so that a hard circuit board may be used, thereby increasing the type selection range of the kit.

In some embodiments, the plurality of lower metal electrodes 11 may also be led out from a plurality of edges of the second conductive layer 6, and the electronic device further includes a plurality of first transmission lines, where the plurality of first transmission lines and the plurality of lower metal electrodes 11 are connected in a one-to-one correspondence, and then connection with an external circuit board may be achieved through the plurality of first transmission lines. Of course, when the plurality of lower metal electrodes 11 are led out from the same edge of the second conductive layer 6, signal derivation may be achieved by one-to-one correspondence connection between the plurality of first transmission lines and the plurality of lower metal electrodes 11. The first transmission line may be located partly on the surface of the second conductive layer 6 or may be located entirely outside the second conductive layer 6, in particular adaptively designed according to the arrangement of the lower metal electrode 11. The number of the upper metal electrodes 10 and the lower metal electrodes 11 may be the same or different, and may be specifically designed as needed.

The ratio of the material resistivity of the second conductive layer 6 to the material resistivity of the lower metal electrode 11 is greater than or equal to 10, so as to facilitate generating a large enough induced current and to facilitate improving the touch detection accuracy. The lower metal electrode 11 may be a second conductive glue line, for example, the second conductive glue line may be a gold conductive glue line, a silver conductive glue line, a copper conductive glue line, a carbon conductive glue line or a carbon nanotube conductive glue line.

In the foregoing embodiment, the arrangement of the upper metal electrode 10 and the lower metal electrode 11 is described as an example, and in other embodiments, the arrangement of the upper metal electrode 10 and the lower metal electrode 11 may be different, and they may be respectively arranged under the condition of meeting the design principle of the two metal electrodes, for example, the edges of the upper metal electrode 10 and the first conductive layer 5 are disposed in a one-to-one correspondence manner, and the lower metal electrode 11 may be arranged in a manner referring to fig. 6, or other different arrangements may be adopted, which are not illustrated herein. The plurality of upper metal electrodes 10 and the plurality of lower metal electrodes 11 may be led out from the same side of the electronic device, thereby facilitating the electrical connection with the plurality of upper metal electrodes 10 and the plurality of lower metal electrodes 11, respectively, through a single wiring board.

In the above-described respective embodiments, as shown in fig. 5 and 6, the top view shape of the first conductive layer 5 is the same as the top view shape of the first piezoelectric film layer 2, both of which are quadrangular; in other embodiments, the top view shape of the first conductive layer 5 and the top view shape of the first piezoelectric film layer 2 are the same other polygonal structures; in still other embodiments, the top view shape of the first conductive layer 5 and the top view shape of the first piezoelectric film layer 2 may be different shapes, for example, the top view shape of the first piezoelectric film layer 2 may be a quadrangle, and the top view shape of the first conductive layer 5 may be a triangle, as long as the first piezoelectric film layer 2 can completely cover the first conductive layer 5, and the top view shapes of both are not limited.

Similarly, as shown in fig. 5 and 6, the top view shape of the second conductive layer 6 is the same as the top view shape of the second piezoelectric film layer 3, both of which are quadrangular; in other embodiments, the top view shape of the second conductive layer 6 and the top view shape of the second piezoelectric film layer 3 are the same other polygonal structures; in still other embodiments, the top view shape of the second conductive layer 6 and the top view shape of the second piezoelectric film layer 3 may be different shapes, for example, the top view shape of the second piezoelectric film layer 3 may be a quadrangle, and the top view shape of the second conductive layer 6 may be a triangle, as long as the second piezoelectric film layer 3 can completely cover the second conductive layer 6, and the top view shapes of both are not limited.

Similarly, as shown in fig. 5 and 6, the top view shape of the second conductive layer 6 is the same as the top view shape of the first conductive layer 5, both of which are quadrangular; in other embodiments, the top view shape of the second conductive layer 6 and the top view shape of the first conductive layer 5 are the same other polygonal structures; in still other embodiments, the top view shape of the second conductive layer 6 and the top view shape of the first conductive layer 5 may be different shapes, for example, the top view shape of the first conductive layer 5 may be quadrilateral, the top view shape of the second conductive layer 6 may be triangular, and the top view shapes of both are not limited.

Similarly, as shown in fig. 5 and 6, the top view shape of the first piezoelectric film layer 2 and the top view shape of the second piezoelectric film layer 3 are the same, both of which are quadrangular; in other embodiments, the top view shape of the first piezoelectric film layer 2 and the top view shape of the second piezoelectric film layer 3 are the same other polygonal structures; in still other embodiments, the top view shape of the first piezoelectric film layer 2 and the top view shape of the second piezoelectric film layer 3 may be different shapes, for example, the top view shape of the second piezoelectric film layer 3 may be quadrilateral, the top view shape of the first piezoelectric film layer 2 may be triangular, and the top view shapes of both are not limited.

In the above embodiments, the material of the first conductive layer 5 includes, but is not limited to, stainless steel, copper, silver, chromium, gold, and indium tin oxide. Similarly, the material of the second conductive layer 6 includes, but is not limited to, stainless steel, copper, silver, chromium, gold, and indium tin oxide. The first conductive layer 5 and the second conductive layer 6 may be conductive layers made of the same material or conductive layers made of different materials, and may be designed as required. At least one of the first conductive layer 5 and the second conductive layer 6 may be formed by a sputtering vapor deposition process or a physical vapor deposition process. The first conductive electrode 7, the second conductive electrode 8, the third conductive electrode 9, the upper metal electrode 10, and the lower metal electrode 11 may also be formed using a sputtering evaporation process or a physical evaporation process.

In some embodiments, adjacent insulating columns 4 may be disposed in contact with each other, with minimal gaps between the contacts for airflow. In other embodiments, each insulating column 4 may be spaced from at least one adjacent insulating column 4, for example, a plurality of insulating columns may be disposed around each insulating column 4, and may be spaced from each adjacent insulating column 4, or may be spaced from one or more insulating columns 4 and may be disposed in contact with other insulating columns 4.

The insulating column 4 may have a height between 0.5um and 1mm, so as to provide a deformation space for the first piezoelectric film layer 2 and the second piezoelectric film layer 3 when vibrating or being pressed, and simultaneously avoid short circuit caused by contact between the first piezoelectric film layer 2 and the second piezoelectric film layer 3 and the conductive aperture plate 1, and simultaneously, the thickness dimension of the electronic device may be compatible within the designed height range. By doing so, the height of the insulating column 4 can be made relatively low, for example, up to 0.6um, 0.7um, etc., when the insulating column 4 is formed by performing an exposure and etching process for a photoresist material. The height of the insulating columns 4 provided between the first piezoelectric film layer 2 and the conductive aperture plate 1 and the height of the insulating columns 4 provided between the second piezoelectric film layer 3 and the conductive aperture plate 1 may be the same or different.

In order to improve the waterproof performance of the electronic device, as shown in fig. 5 and 6, the electronic device further includes a first insulating ring 12, the first insulating ring 12 is disposed between the conductive aperture plate 1 and the first piezoelectric film layer 2, and the first insulating ring 12 surrounds all the insulating columns 4 disposed between the conductive aperture plate 1 and the first piezoelectric film layer 2, so that the moisture sealing between the conductive aperture plate 1 and the first piezoelectric film layer 2 can be achieved by the disposition of the first insulating ring 12. As shown in fig. 5 and 6, the inner side of the first insulating ring 12 may protrude one or more protruding columns, which may be spaced from or in contact with the insulating columns 4, and the top view shape of the protruding columns may be the same as or different from the top view shape of the insulating columns 4; in other embodiments, as shown in fig. 7, the inner side of the first insulating ring 12 may be formed with a flat surface without providing a protrusion.

Similarly, as shown in fig. 5 and 6, the electronic device further includes a second insulating ring 13, the second insulating ring 13 being disposed between the conductive aperture plate 1 and the second piezoelectric film layer 3, and the second insulating ring 13 surrounding all of the insulating columns 4 disposed between the conductive aperture plate 1 and the second piezoelectric film layer 3, whereby by the disposition of the second insulating ring 13, vapor sealing between the conductive aperture plate 1 and the second piezoelectric film layer 3 can be achieved. As shown in fig. 5 and 6, the inner side of the second insulating ring 13 may protrude one or more protruding columns, which may be spaced from or in contact with the insulating columns 4, and the top view shape of the protruding columns may be the same as or different from the top view shape of the insulating columns 4; in other embodiments, the second insulating ring 13 may not have a protrusion, and may have a flat surface, as in the embodiment of fig. 7.

In the same electronic device, the first insulating ring 12 and the second insulating ring 13 may have the same structure, or the first insulating ring 12 and the second insulating ring 13 may have different structures, so long as all insulating columns 4 surrounding between the corresponding piezoelectric film layers and the conductive aperture plate 1 are satisfied. The first insulating ring 12 and the second insulating ring 13 may be included in the same electronic device at the same time, or alternatively, the first insulating ring 12 or the second insulating ring 13 may be included in the same electronic device.

In some embodiments, the top view shape of the insulating column 4 may be any shape, for example, the top view shape of the insulating column 4 may be a cross, T, triangle, square, parallelogram, pentagon, or polygon above. As shown in fig. 5 and 6, the top view shapes of the plurality of insulating columns 4 disposed between the first piezoelectric film layer 2 and the conductive aperture plate 1 may be the same shape; alternatively, the top view shape of the plurality of insulating columns 4 disposed between the first piezoelectric film layer 2 and the conductive aperture plate 1 may be various shapes; similarly, the top view shapes of the plurality of insulating columns 4 disposed between the second piezoelectric film layer 3 and the conductive aperture plate 1 may be the same shape; alternatively, the shape of the top view of the plurality of insulating columns 4 disposed between the first piezoelectric film layer 2 and the conductive aperture plate 1 may be various shapes.

In some embodiments, as shown in fig. 5 and 6, the insulating columns 4 disposed between the conductive aperture plate 1 and the first piezoelectric film layer 2 and the insulating columns 4 disposed between the conductive aperture plate 1 and the second piezoelectric film layer 3 are respectively arranged in an array. Wherein, the gap between two adjacent insulating columns 4 is greater than or equal to 0, and the gap between two adjacent insulating columns 4 is zero, which is understood as that the two insulating columns 4 are in contact. Optionally, the gap between two adjacent insulating columns 4 is less than or equal to 95 of the length of any insulating column 4 in the side-by-side direction of the two adjacent insulating columns 4. For example, as shown in fig. 6, the gap between two adjacent insulating columns 4 is D, and the length of the insulating column 4 having a smaller length between the two adjacent insulating columns 4 in the side-by-side direction is L, D is less than or equal to 95% L, and for example, l=50% D.

In the above embodiments, the opening ratio of the conductive aperture plate 1 may be 10% or more. Alternatively, the conductive aperture plate 1 may be an all-metal plate, for example, the conductive aperture plate 1 may be an all-steel plate with holes; alternatively, the conductive aperture plate 1 may comprise a non-conductive body and a conductive outer layer entirely surrounding the non-conductive body, through which conductive outer layer the conductive properties of the conductive aperture plate 1 are achieved. The non-conductive body is understood to be a non-conductive body, wherein each outer surface of the non-conductive body is covered by the conductive outer layer. The non-conductive body may be made of any non-conductive material, such as rubber or silica gel. The conductive aperture plate 1 may also be formed using an exposure etching process.

The conductive material of the conductive aperture plate 1 includes, but is not limited to, stainless steel, copper, silver, gold, chromium, and iron. The conductive aperture plate 1 may be provided in a plate-like structure, or other three-dimensional structure, such as a cylinder, or a tetragonal body, etc., so that a set of first piezoelectric film layers 2 or second piezoelectric film layers 3 may be subsequently provided on each set of oppositely disposed surfaces of the conductive aperture plate 1, as well as some of the related structures in the foregoing embodiments. Alternatively, the conductive aperture plate 1 may have a high degree of flexibility, and the electronic device may be subsequently wound into a target shape.

In the above embodiments, in order to protect the electronic device, the electronic device further includes the first protection film 14 and the second protection film 15, where the first protection film 14 covers the surface of the first conductive layer 5 facing away from the insulating post 4, and the second protection film 15 covers the surface of the second conductive layer 6 facing away from the insulating post 4, so that the external surface of the electronic device can be formed by the first protection film 14 and the second protection film 15, and protection of the electronic device is achieved. At least one of the first protective film 14 and the second protective film 15 may be provided with a through hole, so that the subsequent sound emission of the electronic device as a speaker member can be facilitated.

Based on the technical scheme of the disclosure, a sounding module is further provided, and the sounding module can comprise the electronic device in any one of the embodiments. The sound generating module may be a built-in speaker of the terminal device, or the sound generating module may be an audio terminal, such as a speaker, an earphone, etc.

Based on the technical scheme of the disclosure, a touch module is further provided, and the touch module may include the electronic device described in any one of the embodiments. The touch module may be a built-in touch pad of the terminal device, for example, the touch module may be a touch screen of a mobile phone terminal or a touch screen of a robot, or the touch module may be used as an appearance skin of the robot.

Based on the technical scheme of the disclosure, there is further provided an intelligent terminal, which may include one or more of the electronic devices described in any one of the foregoing embodiments. The intelligent terminal can comprise a robot, a mobile phone terminal, an intelligent sound box and the like.

Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This disclosure is intended to cover any adaptations, uses, or adaptations of the disclosure following the general principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.

It is to be understood that the present disclosure is not limited to the precise arrangements and instrumentalities shown in the drawings, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims

1. An electronic device, comprising:

a conductive aperture plate;

2. The electronic device of claim 1, wherein the first and/or second piezoelectric film layers are electret piezoelectric film layers.

3. The electronic device of claim 2, wherein the electret film layer is a permanent charged film layer formed by a charging process with respect to a substrate.

4. An electronic device according to claim 3, wherein the charging process is a high voltage corona method or a polarization method.

5. The electronic device of claim 3, wherein the substrate has nanoscale pores on a surface or inside.

6. The electronic device of claim 3, wherein the substrate is a material having permanently high-charge characteristics.

7. The electronic device according to claim 3, wherein the base material is a material having a waterproof coefficient higher than a set value and an air permeability index higher than the set value.

8. The electronic device of claim 3, wherein the substrate is a fluorine-containing material polymer substrate.

9. The electronic device of claim 8, wherein the substrate is one of:

polytetrafluoroethylene, polyvinylidene fluoride and perfluoroethylene propylene copolymers.

10. The electronic device of claim 8, wherein the substrate is a semiconductor material having piezoelectric properties.

11. The electronic device of claim 10, wherein the substrate is silicon oxide, silicon dioxide or silicon nitride.

12. The electronic device of claim 1, further comprising:

the at least one first conductive electrode is arranged on one side, away from the conductive aperture plate, of the first conductive layer;

The at least one second conductive electrode is arranged on one side, away from the conductive aperture plate, of the second conductive layer;

the conductive aperture plate leads out a third conductive electrode;

the first conductive electrode and the second conductive electrode are connected to the same audio signal input end, and the third conductive electrode is grounded; or the third conductive electrode is connected to the audio signal input end, and the first conductive electrode and the second conductive electrode are grounded.

13. The electronic device according to claim 12, wherein when the audio signal input terminal inputs a signal, the first piezoelectric film layer and the second piezoelectric film layer vibrate in the same direction.

14. The electronic device of claim 12, wherein the audio signal input is an audio ac voltage.

15. The electronic device of claim 1, further comprising a single upper metal electrode disposed along either edge of the first conductive layer, the conductive aperture plate leading out a third conductive electrode.

16. The electronic device of claim 1, further comprising a plurality of upper metal electrodes, each upper metal electrode disposed along at least one edge of the first conductive layer;

At least one upper metal electrode is arranged at each edge of the first conductive layer, the number of edges corresponding to a plurality of upper metal electrodes arranged at the same edge is increased in the direction from inside to outside of the first conductive layer,

and the conductive aperture plate leads out a third conductive electrode.

17. The electronic device of claim 16, wherein the number of upper metal electrodes is equal to the number of edges of the first conductive layer.

18. The electronic device of claim 16, wherein a plurality of upper metal electrodes are disposed in one-to-one correspondence with a plurality of edges of the first conductive layer.

19. The electronic device of claim 16, wherein a plurality of the upper metal electrodes are gathered at the same side of the first conductive layer.

20. The electronic device of claim 19, further comprising a wiring board located outside the first conductive layer, the wiring board being in electrical communication with each of the upper metal electrodes.

21. The electronic device of claim 16, further comprising a plurality of first transmission lines, wherein a plurality of the first transmission lines are connected in one-to-one correspondence with a plurality of the upper metal electrodes.

22. The electronic device of claim 16, wherein the first conductive layer is a quadrilateral structure, the first conductive layer comprising a first edge, a second edge, a third edge, and a fourth edge, the first edge and the third edge being disposed opposite one another, the second edge and the fourth edge being disposed opposite one another;

the upper metal electrode comprises a first metal electrode, a second metal electrode, a third metal electrode and a fourth metal electrode;

the first metal electrode is disposed along the first edge, the second metal electrode is disposed along the first edge and the second edge, and the second metal electrode is disposed inward of the first metal electrode at the first edge;

the third metal electrode is arranged along the third edge and a fourth edge, the fourth metal electrode is arranged along the fourth edge, and the fourth metal electrode is arranged at the fourth edge to be positioned at the inner side relative to the third metal electrode;

the first metal electrode, the second metal electrode, the third metal electrode and the fourth metal electrode are collected at the fourth edge or led out from the first edge.

23. The electronic device according to claim 15 or 16, wherein a ratio of a material resistivity of the first conductive layer to a material resistivity of the upper metal electrode is 10 or more.

24. The electronic device of claim 15 or 16, wherein the upper metal electrode is a first conductive glue line.

25. The electronic device of claim 24, wherein the first conductive glue line is one of:

gold conductive adhesive wire, silver conductive adhesive wire, copper conductive adhesive wire, carbon conductive adhesive wire and carbon nanotube conductive adhesive wire.

26. The electronic device of claim 16, further comprising a plurality of lower metal electrodes, each lower metal electrode disposed along at least one edge of the second conductive layer;

at least one lower metal electrode is arranged at each edge of the second conductive layer, and the number of edges corresponding to a plurality of lower metal electrodes arranged at the same edge is increased in the direction from inside to outside of the second conductive layer.

27. The electronic device of claim 26, wherein the number of lower metal electrodes is equal to the number of edges of the second conductive layer.

28. The electronic device of claim 26, wherein a plurality of lower metal electrodes are disposed in one-to-one correspondence with a plurality of edges of the second conductive layer.

29. The electronic device of claim 26, wherein a plurality of said lower metal electrodes are gathered at a same side edge of said second conductive layer.

30. The electronic device of claim 29, further comprising a wiring board located outside the second conductive layer, wherein a plurality of contacts of the wiring board are in one-to-one communication with a plurality of lower metal electrodes.

31. The electronic device of claim 26, further comprising a plurality of second transmission lines, each of the second transmission lines connecting a single one of the lower metal electrodes, an electrical signal corresponding to the lower metal electrode being routed through the second transmission line.

32. The electronic device of claim 26, wherein the second conductive layer is rectangular in configuration, the second conductive layer including a fifth edge, a sixth edge, a seventh edge, and an eighth edge, the fifth edge and the seventh edge being disposed opposite each other, the sixth edge and the eighth edge being disposed opposite each other;

the lower metal electrode comprises a fifth metal electrode, a sixth metal electrode, a seventh metal electrode and an eighth metal electrode;

The fifth metal electrode is arranged along the fifth edge, the sixth metal electrode is arranged along the fifth edge and the sixth edge, and the fifth metal electrode is arranged on the inner side relative to the fifth metal electrode;

the seventh metal electrode is disposed along the seventh edge and an eighth edge, the eighth metal electrode is disposed along an eighth edge, and the eighth metal electrode is disposed inside with respect to the seventh metal electrode at the eighth edge;

and the fifth metal electrode, the sixth metal electrode, the seventh metal electrode and the eighth metal electrode are converged on the eighth edge or the fifth edge to be led out.

33. The electronic device of claim 26, wherein a ratio of a material resistivity of the second conductive layer to a material resistivity of the lower metal electrode is greater than or equal to 10.

34. The electronic device of claim 26, wherein the lower metal electrode is a second conductive glue line.

35. The electronic device of claim 34, wherein the second conductive glue line is one of:

36. The electronic device of claim 35, wherein the number of lower metal electrodes and the number of upper metal electrodes are equal or unequal.

37. The electronic device of claim 1, wherein a top view shape of the first conductive layer and a top view shape of the first piezoelectric film layer are the same or different.

38. The electronic device of claim 1, wherein a top view shape of the second conductive layer and a top view shape of the second piezoelectric film layer are the same or different.

39. The electronic device of claim 1, wherein a top view shape of the first conductive layer and a top view shape of the second conductive layer are the same or different.

40. The electronic device of claim 1, wherein the material of the first conductive layer includes, but is not limited to, stainless steel, copper, silver, chromium, gold, and indium tin oxide.

41. The electronic device of claim 1, wherein the material of the second conductive layer includes, but is not limited to, stainless steel, copper, silver, chromium, gold, and indium tin oxide.

42. The electronic device of claim 1, wherein the first conductive layer and/or the second conductive layer is formed by a sputter evaporation process or a physical evaporation process.

43. The electronic device of claim 1, wherein each insulating post is spaced apart from at least one adjacent insulating post.

44. The electronic device of claim 1, wherein the height of the insulating pillars is in the range of 0.5ummm-1 mm.

45. The electronic device of claim 1, further comprising a first insulating collar disposed between the conductive aperture plate and the first piezoelectric film layer, the first insulating collar surrounding all insulating posts disposed between the first piezoelectric film layer and the conductive aperture plate.

46. The electronic device of claim 1, further comprising a second insulating collar disposed between the conductive aperture plate and the second piezoelectric film layer, the second insulating collar surrounding all insulating posts disposed between the first piezoelectric film layer and the conductive aperture plate.

47. The electronic device according to claim 1, wherein the top view shape of the insulating column is a cross, T, triangle, square, parallelogram, or pentagon or more.

48. The electronic device of claim 1, wherein the insulating columns disposed between the conductive aperture plate and the first piezoelectric film layer and the insulating columns disposed between the conductive aperture plate and the second piezoelectric film layer are arranged in an array, respectively.

49. The electronic device of claim 48, wherein a gap between two adjacent insulating posts is greater than or equal to 0.

50. The electronic device of claim 49, wherein a gap between two adjacent insulating posts is less than or equal to 95% of a length of any insulating post in a side-by-side direction of the two adjacent insulating posts.

51. The electronic device of claim 1, wherein the conductive aperture plate has an aperture ratio of greater than or equal to 10%.

52. The electronic device of claim 1, wherein the conductive aperture plate is an all-metal plate.

53. The electronic device of claim 1, wherein the conductive aperture plate comprises a non-conductive body and a conductive outer layer that entirely encases the non-conductive body.

54. The electronic device of claim 1, wherein the conductive material of the conductive aperture plate includes, but is not limited to, stainless steel, copper, silver, gold, chromium, and iron.

55. The electronic device of claim 1, wherein the first and second piezoelectric film layers have a thickness greater than or equal to 0.1um and less than or equal to 2mm.

56. The electronic device of claim 1, wherein the electrostatic voltages of the first and second piezoelectric film layers are each in a range between 10v-1200 v.

57. The electronic device of claim 1, further comprising:

a first protective film covering a surface of the first conductive layer facing away from the insulating column;

and the second protective film covers the surface of the second conductive layer, which is away from the insulating column.

58. The electronic device according to claim 57, wherein a through hole is provided in the first protective film and/or the second protective film.

59. A sound module comprising the electronic device of any one of claims 1-58.

60. A touch module comprising the electronic device of any one of claims 1-57.

61. An intelligent terminal, characterized in that at least one comprises an electronic device as claimed in any of claims 1-58.