CN117080337A - Monolithically integrated LED chip and display device - Google Patents
Monolithically integrated LED chip and display device Download PDFInfo
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- CN117080337A CN117080337A CN202311149255.XA CN202311149255A CN117080337A CN 117080337 A CN117080337 A CN 117080337A CN 202311149255 A CN202311149255 A CN 202311149255A CN 117080337 A CN117080337 A CN 117080337A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims description 67
- 239000000463 material Substances 0.000 claims description 22
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 39
- 239000002184 metal Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 28
- 230000008569 process Effects 0.000 description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 238000005530 etching Methods 0.000 description 11
- 229910052594 sapphire Inorganic materials 0.000 description 10
- 239000010980 sapphire Substances 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910005887 NiSn Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910006119 NiIn Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- YLZGECKKLOSBPL-UHFFFAOYSA-N indium nickel Chemical compound [Ni].[In] YLZGECKKLOSBPL-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- -1 indium tin metal oxide Chemical class 0.000 description 1
- 239000000087 laser glass Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The application relates to the technical field of semiconductor devices, in particular to a monolithic integrated LED chip and a display device, which solve the technical problem of how to design the structure of the integrated LED chip and facilitate the connection of the integrated LED chip and PM-driven IC chips.
Description
Technical Field
The application relates to the technical field of semiconductor devices, in particular to a monolithically integrated LED chip and a display device.
Background
Currently, in LED display screen systems, the manner of controlling the light emitting unit (i.e., LED chip or LED chip package) to be turned on or off mainly includes the following two ways: passive driving (i.e., PM driving), active driving (i.e., AM driving), wherein the passive driving includes IC chip driving, and the active driving includes CMOS driving, TFT driving, and the like.
The TFT (i.e. thin film transistor substrate) drive is the AM drive of the most common OLED and LCD display screen, which is directly manufactured on glass, has higher integration level, but because the material is oxide or polysilicon, the carrier concentration is very low, the drive current is smaller and belongs to the nA level, therefore, the TFT (i.e. thin film transistor substrate) drive is suitable for being applied to various OLED and LCD display screens (the screen size is about 1 inch-100 inches, the PPI value is about 50-300) with low brightness requirement and Micro-LED (the length-width size is below 60 mu m) with medium and large sizes (the size is about 10 inches-100 inches), and the brightness of the Micro-LED display screen is superior to that of the OLED and LCD display screen, but the LED chip has low drive current density and cannot exert the characteristics of high current resistance and high brightness of inorganic luminescent materials such as LED chips.
The CMOS drive belongs to an advanced IC preparation process, the size is smaller, the length and width of a single drive unit are generally 1-4 mu m, compared with the TFT drive, the CMOS drive has the advantages of current and higher integration level, and can be applied to micro-display screens, and the light-emitting unit is generally micro-LED. However, in practical applications, at least one CMOS driving unit or several CMOS driving units can be shared to realize driving of one micro-scale LED chip unit, so CMOS driving is generally applied to micro-display panels (PPI values of about 1000, even tens of thousands) with dimensions of VR, AR, MR, etc. less than 1 inch.
The PM-driven IC chip is a discrete package device, and a driving unit generally includes a positive IC chip and a negative IC chip, and the size of a single IC chip is generally in millimeter level, and the driving current is in mA level, which is beneficial to fully exerting the working characteristics of the LED chip such as high current density and high brightness, so that the PM-driven IC chip is generally applied to a medium-sized, large-sized or ultra-large LED display screen with a size greater than 10 inches (PPI value is generally less than 50), for example: and the LED display screens for information display in public places of airports, advertising in markets, indoor command, conferences and the like have the point spacing of more than P0.6mm and are suitable for medium-distance and long-distance viewing.
However, at present, the light emitting units adopted in the LED display screen are usually discrete devices (for example, the package structure of a single mini-LED chip), and when the discrete devices are connected with the IC chip, the discrete devices need to be processed one by one, that is, the discrete devices are connected with the circuits (the circuits are usually in a vertical and horizontal structure) in the substrate one by one, so that the positive IC chip and the negative IC chip are connected, and the way of connecting one by one is not beneficial to further improving the production efficiency.
In the prior art, an LED chip vertical chip structure is provided, the application number is 201510778998.2, and the chip is an integrated structure of array distributed LED chip units, so that the problem of low production efficiency caused by individual processing of discrete devices can be solved, but the electrodes of the LED chip units are still in discrete structures, and independent control of each LED chip unit can be realized by using CMOS driving. Due to the application limitation of the LED vertical chip discrete electrode structure and the CMOS drive, the LED vertical chip structure cannot be applied to medium-sized display screens and large-sized display screens containing a large number of micron-sized LED chip units, and the application range is limited.
Therefore, there is a need to develop an integrated LED chip that can be applied to a medium-sized or more display screen and is conveniently connected to a PM-driven driving unit.
Disclosure of Invention
In view of the above-mentioned shortcomings in the prior art, the present application provides a monolithically integrated LED chip that is convenient to connect with a PM-driven IC chip, and can be applied to a display screen of medium or above.
In order to achieve the above purpose, the application adopts the following technical scheme:
the monolithic integrated LED chip comprises a first substrate and a plurality of LED chip units distributed on the first substrate in an array manner, wherein each LED chip unit comprises an epitaxial layer, a current expansion layer and a first insulating layer which are sequentially distributed from bottom to top, and each epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially distributed from bottom to top; the LED chip is characterized by further comprising a first electrode and a second electrode, wherein the first electrode is positioned on the back surface of the same row of LED chip units and is used for realizing the serial connection of first semiconductor layers of the same row of LED chip units;
the second electrodes are positioned on the front surfaces of the LED chip units in the same column, the second semiconductor layers of the LED chip units in the same column are connected in series through the current expansion layer, a second insulating layer is arranged between the first electrodes and the second electrodes, and the second insulating layer is used for preventing the first electrodes from being conducted with the second electrodes;
the first electrode is provided with light-transmitting areas, and the light-transmitting areas are in one-to-one correspondence with the light-emitting surfaces of the single LED chip units;
the first electrode and the second electrode are used for connecting the LED chip unit with an external circuit or a driving unit, and the driving mode of the driving unit is PM driving;
when the integrated LED chip works, the driving unit drives and controls the corresponding LED chip unit through the first electrode and the second electrode.
It is further characterized in that,
the first semiconductor layer is an N-type semiconductor layer, and the second semiconductor layer is a P-type semiconductor layer;
optionally, the N-type semiconductor layer is an N-GaN layer or an N-ALGaInP layer, and the P-type semiconductor layer is a P-GaN layer or a P-ALGaInP layer;
optionally, the first electrode is an anode, and the second electrode is a cathode;
optionally, the material of the first insulating layer is Al 2 O 3 、SiO 2 Thin film or SiNx thin film, but not limited to Al 2 O 3 、SiO 2 A thin film or a SiNx thin film;
optionally, the light-emitting layer is a quantum well layer;
optionally, the current expansion layer is a conductive layer, and the conductive layer has good current expansion and can form ohmic contact with the P-type semiconductor layer;
optionally, the material of the current spreading layer is ITO or silver, but is not limited to ITO or silver;
optionally, the second insulating layer is made of SiO 2 、SiNx、AlO 3 Or AlN, but not limited to SiO 2 、SiNx、AlO 3 Or AlN, has very good insulativity;
optionally, the first electrode includes a first chip connection portion and a first bonding wire connection portion, one end of the first electrode extends along the row direction of the LED chip units, the area protruding from the row of LED chip units is the first bonding wire connection portion, and the area located below the row of LED chip units is the first chip connection portion; the second electrode comprises a second chip connecting part and a second bonding wire connecting part, one end of the second electrode extends along the array direction of the LED chip units, the area protruding out of the array of the LED chip units is the second bonding wire connecting part, the area below the array of the LED chip units is the second chip connecting part, and the first bonding wire connecting part and the second bonding wire connecting part are respectively connected with an external circuit or a driving unit through bonding wires;
alternatively, the first bonding wire connection parts of the two adjacent rows of the first electrodes are staggered or distributed in the same direction, and the second bonding wire connection parts of the two adjacent columns of the second electrodes are staggered or distributed in the same direction;
optionally, the first substrate is an opaque substrate, and is made of Si, but is not limited to Si, which is beneficial to avoiding light stray;
optionally, the length and width dimensions of the LED chip units are 10-100 μm;
the display device comprises a plurality of LED display panels distributed in an array, wherein the LED display panels comprise a substrate, integrated LED chips distributed on the substrate in an array and a driving unit, and the display device is characterized in that the integrated LED chips are the monolithic integrated LED chips, and the integrated LED chips are electrically connected with the driving unit through a first electrode and a second electrode.
The structure of the application can achieve the following beneficial effects:
according to the application, the first electrode and the second electrode of the integrated LED chip are respectively positioned on the front side and the back side of the integrated LED chip (i.e. not positioned on the same side of the integrated LED chip), and are respectively electrically connected with the first semiconductor layer and the current expansion layer, the driving current of the driving unit is transmitted to the first semiconductor layer of the same row of LED chip units through the first electrode and is transmitted to the second semiconductor layer of the same column of LED chip units through the second electrode, so that the opening or closing control of the single LED chip unit is realized.
In addition, the array distributed LED chip units are integrated in the same integrated LED chip through the first electrode in the row direction and the second electrode in the column direction, the first electrode in the row direction can connect the LED chip units in the same row with the positive electrode or the negative electrode of the driving unit, the second electrode in the column direction can connect the LED chip units in the same column with the negative electrode or the positive electrode of the driving unit, the LED chip units do not need to be connected with the driving unit one by one, and the production efficiency is improved.
In addition, the monolithic integrated LED chip is arranged in the LED display panel, and the LED display panel is spliced to form the display device, and because the monolithic integrated LCD chip is provided with the first electrode and the second electrode in the row direction, the integrated LED chip is convenient to be connected with a PM driving unit, and PM driving is a main driving mode of a medium-sized display screen, a large-sized display screen and an ultra-large display screen (the light emitting unit is the integrated LED chip in the application), so that the monolithic integrated LED chip is not limited by an electrode structure and the driving unit and can be applied to the medium-sized display screen, the large-sized display screen and the ultra-large display screen.
Drawings
FIG. 1 is a flow chart of a method for manufacturing a monolithically integrated LED chip of the present application;
FIG. 2 is a schematic cross-sectional structure after preparing an epitaxial layer and a current spreading layer on a second substrate;
FIG. 3 is a schematic cross-sectional structure after preparing a boss on a second substrate;
FIG. 4 is a schematic cross-sectional structure of the LED chip unit after fabrication on a second substrate;
FIG. 5 is a schematic cross-sectional view of the first insulating layer formed on the second substrate and etched;
FIG. 6 is a schematic cross-sectional view of a first metal layer deposited on the surface of the first insulating layer and the LED chip unit;
FIG. 7 is a schematic cross-sectional structure of a first metal layer and a second metal layer bonded correspondingly;
FIG. 8 is a schematic cross-sectional view of the first metal layer and the second metal layer after bonding to form a bonding metal layer;
FIG. 9 is a schematic cross-sectional view of the second substrate after removal;
FIG. 10 is a schematic cross-sectional view of the first semiconductor layer after partial removal;
FIG. 11 is a schematic top view of a first substrate with second electrodes arranged in a column direction;
FIG. 12 is a schematic cross-sectional view of the structure B-B of FIG. 11 in front view;
FIG. 13 is a schematic cross-sectional view of the third metal layer overlying the first substrate;
FIG. 14 is a schematic top view of a first electrode formed on a first substrate in a row configuration;
FIG. 15 is a schematic cross-sectional view of the structure of FIG. 14 from A-A;
fig. 16 is a diagram showing the effect of the integrated LED chip of the present application.
Reference numerals: a first electrode 1, a first chip connection portion 101, a first bonding wire connection portion 102, and an LED chip unit 10;
a second electrode 2, a second chip connection portion 201, and a second bonding wire connection portion 202;
a second substrate 3, a first metal layer 301, a reflective layer 302, a barrier layer 303;
an epitaxial layer 4, a first semiconductor layer 401, a light emitting layer 402, a second semiconductor layer 403;
a current spreading layer 5, a first insulating layer 6, a second insulating layer 7;
a first substrate 8, a second metal layer 801, a bonding metal layer a, and a third metal layer 901.
Detailed Description
In order that those skilled in the art will better understand the present application, a technical solution in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
It is noted that the terms "comprises" and "comprising," and any variations thereof, in the description and claims of the present application and in the foregoing figures, are intended to cover a non-exclusive inclusion, such that a process, method, apparatus, article, or device that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed or inherent to such process, method, article, or device.
The following provides a specific embodiment of a monolithically integrated LED chip, where the monolithically integrated LED chip includes a first substrate, a plurality of LED chip units 10 distributed on the first substrate in an array structure, a first electrode 1 distributed on the front surface of the LED chip unit 10, and a second electrode 2 distributed on the back surface of the LED chip unit 10, the first electrode 1 is an N-type metal electrode, the second electrode 2 is a P-type metal electrode, a second insulating layer 7 is disposed between the first electrode 1 and the second electrode 2, and the second insulating layer 7 is used for preventing the first electrode 1 and the second electrode 2 from being conducted.
Each LED chip unit comprises a second substrate 3, an epitaxial layer 4, a current expansion layer 5 and a first insulating layer 6, wherein the epitaxial layer 4, the current expansion layer 5 and the first insulating layer 6 are positioned on the front surface of the second substrate 3 and are distributed from bottom to top in sequence. The epitaxial layer 4 includes a first semiconductor layer 401, a light emitting layer 402, and a second semiconductor layer 403 sequentially distributed from bottom to top, where the first semiconductor layer 401 is an N-type semiconductor layer, the second semiconductor layer 403 is a P-type semiconductor layer, and the light emitting layer 402 is a quantum well layer.
In this embodiment, the materials of the N-type semiconductor layer, the P-type semiconductor layer, the first insulating layer 6, the current spreading layer 5, the second insulating layer 7, the N-type metal electrode, and the P-type metal electrode are not particularly limited, the material of the N-type semiconductor layer is preferably N-GaN or N-ALGaInP, and the material of the P-type semiconductor layer is preferably P-GaN or P-ALGaInP; the material of the first insulating layer 6 is preferably SiO 2 Film or SiN X A film; the material of the current expansion layer 5 is preferably nano indium tin metal oxide, niAu or Ag; second insulating layer 7 materialPreferably SiO 2 、SiNx、AlO 3 Or AlN.
The arrangement structure of the first electrode 1 and the second electrode 2 is as follows: the first electrode 1 is located at the back of the same row of LED chip units, and is used for connecting the first semiconductor layers 401 of the same row of LED chip units in series, the second electrode 2 is located at the front of the same column of LED chip units, and is electrically connected with the second semiconductor layers 403 through the current expansion layer 5, and is used for connecting the second semiconductor layers 403 of the same column of LED chip units in series.
In order to facilitate connection of the row direction LED chip unit to an external circuit or an IC chip through the corresponding first electrode 1 and bonding wire, and connection of the column direction LED chip to the external circuit or the IC chip through the corresponding second electrode 2 and bonding wire, in this embodiment, the first electrode 1 and the second electrode 2 are set to the following structures: the first electrode 1 includes a first chip connection portion 101 and a first bonding wire connection portion 102, one end of which extends along the row direction of the LED chip units 10, the area protruding from the row of LED chip units 10 is the first bonding wire connection portion 102, and the area located below the row of LED chip units 10 is the first chip connection portion 101; the second electrode 2 includes a second chip connection portion 201 and a second wire connection portion 202, one end of which extends along the row direction of the LED chip units, the area protruding from the row of the LED chip units is the second wire connection portion 202, the area located below the row of the LED chip units is the second chip connection portion 201, the first chip connection portion 101 and the second chip connection portion 201 are respectively used for connecting the corresponding row direction LED chip units and the row direction LED chip units, and the first wire connection portion 102 and the second wire connection portion 202 are respectively used for connecting the wire bonds.
In this embodiment, the first bonding wire connection portions 102 of two adjacent rows of the first electrodes 1 are staggered, and the second bonding wire connection portions 201 of two adjacent columns of the second electrodes 2 are staggered. Taking the first electrodes 1 as an example, the first bonding wire connection portions 102 of one row of the first electrodes 1 are distributed in a staggered manner, namely, the first bonding wire connection portions 102 of the adjacent other row of the first electrodes 1 are located at one side of the row of the LED chip units, and the first bonding wire connection portions 102 of the adjacent other row of the first electrodes 1 are located at the other side of the row of the LED chip units.
In the prior art, when the chip integration level is too high, the number of bonding pads is increased, the bonding pads and the bonding pad spacing are smaller, a certain difficulty is brought to the subsequent bonding wire process, for example, the accurate bonding of bonding wires and bonding pads is not facilitated, and the staggered distribution mode in the application reduces the number of bonding pads on one side of an LED chip unit, which is beneficial to enlarging the area of bonding pads (namely a first bonding wire connecting part and a second bonding wire connecting part), so that the size of a welding electrode is enlarged while the effective area of the chip is not reduced, and the application is beneficial to improving the subsequent connection precision of an integrated LED chip with other devices or external circuits especially when the integrated LED chip corresponds to a scene with more pins of a packaging substrate.
In addition, the first electrode extends along the row direction and is provided with the first bonding wire connecting part protruding from the corresponding row of LED chip units, the second electrode extends along the column direction and is provided with the second bonding wire connecting part protruding from the corresponding column of LED chip units, and the arrangement of the first bonding wire connecting part and the second bonding wire connecting part enables bonding wires to be LED out from the edge of one side of the row of LED chip units or the column of LED chip units and connected with PM-driven IC chips, so that the connection of the middle LED chip unit and an external driving unit is facilitated.
It should be noted that, in another embodiment, a distribution structure in which the first wire bonding portions 102 are distributed in the same direction and/or the second wire bonding portions 202 are distributed in the same direction may be adopted, that is, the first wire bonding portions 102 of each row of the first electrodes 1 are located on the same side of the row of the LED chip units, and/or the second wire bonding portions 202 of each column of the second electrodes 2 are located on the same side of the column of the LED chip units, which is not beneficial to the expansion of the pad size. In practical applications, the orientations of the first wire bonding portion 102 and the second wire bonding portion 202 may be adjusted according to the specific positions where the wire bonding is connected to an external circuit or a driving IC, for example, the first wire bonding portions 102 of the first electrodes 1 in each row are distributed in the same direction, and the second wire bonding portions 202 of the second electrodes 2 in two adjacent rows are distributed in a staggered manner.
In order to ensure that the light emitted by the single LED chip unit can be emitted, in this case, a light-transmitting area 10 is provided on the first electrode 1, and the light-transmitting area 10 corresponds to the light-emitting surface of the single LED chip unit one by one.
The working principle of the monolithic integrated LED chip in the scheme is as follows: when the integrated LED chip works, the PM-driven IC chip transmits driving current to the corresponding LED chip unit 10 through the bonding wire, the first electrode 1 and the second electrode 2, and controls the on or off of the LED chip unit 10, for example, the position coordinates of each LED chip unit 10 in the integrated LED chip are set to be (X1, Y1), (X2, Y2) … … (Xn, yn), where n is an integer, the first bonding wire connection portion 102 includes P1 and P2 … … PM, and corresponds to the first row and the second row … … m of the integrated LED chip, the second bonding wire connection portion 202 includes K1 and K2 … … Km, and corresponds to the first column and the second column … … m of the integrated LED chip, where m is an integer, and when P1 and K1 are turned on, the LED chip unit 10 at the position (X1, Y1) in the corresponding first row and first column is controlled to be turned on.
In order to realize the above structure and functions of the monolithically integrated LED chip, this embodiment provides a process for manufacturing the monolithically integrated LED chip, which includes the following specific process steps:
s1, providing a second substrate 3;
in this embodiment, the material of the second substrate 3 is not particularly limited, and the second substrate 3 is preferably a sapphire substrate, a SiC substrate, a gallium arsenide substrate, or a Si substrate.
When the second substrate 3 is a sapphire substrate and the sapphire substrate is subsequently peeled by a laser glass method, if the surface roughness of the sapphire substrate is high, the laser beam is easily scattered or reflected, so that absorption of laser energy in different areas of GaN is inconsistent.
S2, preparing LED chip units 10 distributed in an array on the front surface of the second substrate 3, wherein the LED chip units 10 comprise an epitaxial layer 4, a current expansion layer 5 and a first insulating layer 6 which are sequentially distributed from bottom to top, and the epitaxial layer 4 comprises a first semiconductor layer 401, a light-emitting layer 402 and a second semiconductor layer 403 which are sequentially distributed from bottom to top.
The specific preparation steps of the LED chip unit comprise: s21, conducting material evaporation is conducted on the upper surface of the second semiconductor layer 403 by adopting an evaporation device, so that a current expansion layer 5 is formed, and referring to FIG. 2;
s22, sequentially etching the current expansion layer 5 and the epitaxial layer 4 to form LED chip units 10 distributed in an array, firstly, adopting a photoetching process (such as an ICP process) to process the current expansion layer 5, wherein the method comprises the steps of S221, covering the surface of the current expansion layer 5 with first photoresist;
s222, photoetching the first photoresist based on the first mask;
s223, corroding the current expansion layer 5 by adopting a plasma dry etching or chemical liquid wet etching mode to form an array distributed boss;
s224, cleaning and removing the first photoresist, and referring to FIG. 3.
Etching the epitaxial layer by using a photoetching process, specifically: s2251, coating a second photoresist on the surface of the boss, the front surface of the second semiconductor layer 403 and the like, namely, the whole surface;
s2252, exposing and developing the second photoresist based on the second mask plate to expose the to-be-etched area on the front surface of the second semiconductor layer 403;
s2253, etching the region to be etched of the second semiconductor layer 403, the light-emitting layer 402 below the region to be etched and the first semiconductor layer 401 with a certain thickness by adopting a plasma etching method to form an array distributed frustum, namely an LED chip unit 10;
s2254, cleaning and removing the second photoresist, referring to FIG. 4.
S23, growing a first insulating layer 6 on the front surface of the LED chip unit 10, the front surface of the residual first semiconductor layer 401 and the like, namely the whole surface by adopting a plasma enhanced chemical vapor deposition (namely PECVD); in the present embodiment, the material of the first insulating layer 6 is not particularly limited, and optionally, the first insulating layer 6 is SiO 2 Film or SiN X The film has an insulating effect.
It should be noted that a chemical vapor deposition (CVD/ALD) method can be used to grow the thin film as the first insulating layer 6, and the material of the first insulating layer 6 is Al 2 O 3 Or AlN, also has an insulating effect.
S24, etching a local area of the first insulating layer 6 by adopting a photoetching process to expose the needed contact position of the current expansion layer 5 to form an LED chip unit;
specifically: s241, spin-coating a layer of third photoresist on the surface of the first insulating layer 6;
s242, exposing and developing the third photoresist based on the third mask plate to expose the area to be etched of the first insulating layer 6;
s243, etching the to-be-etched area of the first insulating layer 6 by adopting a plasma dry etching or chemical liquid wet etching mode to expose the needed contact position of the current expansion layer 5;
s244, cleaning and removing the third photoresist, and referring to FIG. 5.
S3, preparing a second electrode 2 on the front surface of the LED chip unit, wherein the second electrode comprises the following components:
sequentially performing metal evaporation on the whole surface including the front surface of the residual first insulating layer 6 by an electron gun to form a reflecting layer 302, a barrier layer 303 and a first metal layer 301 which are distributed from bottom to top, referring to fig. 6;
the reflective layer is preferably a Ni/Ag/Au metal reflective layer or an ITO/Ag/Tiw mixed reflective layer, and the reflective layer 302 has a light reflection effect, which is beneficial to improving the luminous efficiency.
The material of the barrier layer 303 is preferably a high melting point metal such as Ti or Pt, in order to prevent diffusion between the metal layers.
In this embodiment, the material of the first metal layer 301 is not particularly limited, and any one of the materials NiSn, au, auSn, inSn, inAu, niIn is preferable for the material of the first metal layer 301.
The first substrate 8 is provided, and a metal material is deposited on the front surface of the first substrate 8 to form a second metal layer 801, wherein the material of the second metal layer 801 is the same as that of the first metal layer 301, and the first electrode 1 is manufactured. The first metal layer 301 and the second metal layer 801 are made of the same material, which is favorable for subsequent thermocompression bonding.
The first metal layer 301 on the second substrate 3 and the second metal layer 801 on the first substrate 8 are thermally compression bonded to form a bonding metal layer, see fig. 7 and 8.
Forming second electrodes 2 in the bonding metal layer at intervals in the column direction, comprising: s31, sequentially removing the second substrate 3 and the back surface region of the first semiconductor layer 401: first, the second substrate 3 is removed, referring to fig. 9.
In this embodiment, the LED chip unit is a sapphire chip or a green light chip, and the second substrate 3 is a sapphire substrate, and the sapphire substrate is removed by laser lift-off: the first semiconductor layer 401 is an N-GaN layer, and GaN is decomposed into Ga and N by laser beam during lift-off 2 The sapphire substrate is rapidly separated from the N-GaN layer. The sapphire substrate is made of transparent materials and is easy to generate light crosstalk, and in the embodiment, the sapphire substrate is peeled off, so that the luminous efficiency is improved, and the crosstalk of reflection of the transparent substrate is overcome.
In another embodiment, if the LED chip unit is a blue light chip or a green light chip, the second substrate 3 is a silicon substrate, which is easy to generate light absorption phenomenon, so that the light emitting efficiency of the LED chip unit is low, and therefore, the silicon substrate can be removed by chemical etching; if the LED chip unit is a red light chip, the second substrate 3 is GaA S Substrate, gaA S The substrate is easy to absorb light, so that the light-emitting efficiency of the LED chip unit is low, and the GaA can be chemically etched S And (5) removing the substrate.
Then, a photolithography etching process is used to etch the back surface region of the first semiconductor layer 401, including: s311, spin-coating a fourth photoresist on the whole surface including the back surface of the first semiconductor layer 401;
s312, photoetching the fourth photoresist based on the fourth mask plate to expose the area to be etched of the first semiconductor layer 401;
s313, etching the to-be-etched area of the first semiconductor layer 401 by adopting a plasma dry etching or chemical liquid wet etching mode, so that the back surface of the first insulating layer 6 and the back surface of the rest first semiconductor layer 401 are exposed;
s314, cleaning to remove the fourth photoresist, referring to FIG. 10.
S32, performing graphical etching on the first insulating layer 6 by adopting a photoetching process (such as an ICP process) in a similar way, so that the back surface of the bond metal layer is exposed, wherein the exposed bond metal layer comprises a region to be etched and a connecting region, and the connecting region is a first bonding wire connecting part 102;
and S33, performing patterned etching on the region to be etched by adopting an ICP process, so that the back surface of the first substrate 8 is exposed, and forming strip-shaped second electrodes 2 which are distributed at intervals in the column direction, and referring to fig. 11 and 12.
S4, preparing first electrodes 1 distributed at intervals in the row direction on the back surface of the LED chip unit 10, wherein the first electrodes comprise:
s41, depositing a second insulating layer 7 on the whole surface including the surface of the rest first insulating layer 6 by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method;
carrying out graphical etching on a local area of the second insulating layer 8 by adopting an ICP process to expose the surface of the connecting layer;
s42, a lift-off process is used to form a plurality of first electrodes 1 distributed at intervals in a row direction in the third metal layer 901, and referring to fig. 14 and 15, the method includes: s421, spin-coating a fifth photoresist on the surface of the second insulating layer 7, the surface of the connecting layer and the like, namely the whole surface of the back, and performing graphical etching (namely exposing and developing);
s422, depositing a third metal layer 901 on the entire surface including the fifth photoresist surface based on the developed pattern, referring to fig. 13;
s423, the third metal layer 901 is stripped to form the first electrodes 1 distributed at intervals in the row direction, and the surface of the connection layer is exposed.
In the present embodiment, the material of the third metal layer 901 is not particularly limited, and any one of NiSn (i.e., nickel-tin alloy), au (i.e., gold), auSn (i.e., gold-tin alloy), inSn (i.e., indium-tin alloy), inAu (i.e., jin Yin alloy), and NiIn (i.e., nickel-indium alloy) is preferable as the material of the third metal layer 901.
In the monolithic integrated LED chip, the same type of semiconductor layers of a plurality of LED chip units can share the same electrode, and in the electrode preparation process, the whole bonding metal layer is only required to be divided according to row spacing, and the whole third metal layer 901 is required to be divided according to column spacing, so that the preparation difficulty is greatly reduced, and the preparation process is simplified.
In the monolithically integrated LED chip manufactured by the process method, the unit size of the LED chip can reach 10-100 mu m, the integrated LED chip unit number can gradually increase the integration level according to the development of the processing technology, for example, in the integrated chip 1mm by 1mm in the present stage, the LED chip unit number is as follows: 15×16, i.e. 1mm×1mm integrated chips are provided with 15 rows and 16 columns of LED chip units, as shown in fig. 16, after the process yield is improved, the number of LED chip units integrated in the integrated chips with the same area can be further improved.
Compared with discrete devices, the monolithic integrated LED chip is an integrated chip, in the structural design of the first electrode 1 and the second electrode 2, the first electrode and the second electrode are used as wiring, LED chip units distributed in the row direction or the column direction in the same integrated LED chip can be connected into a circuit of a substrate together, wiring is not required to be additionally arranged for each LED chip unit, and only welding wires are required to be arranged at the edges of the first electrode and the second electrode to be connected with an external driving unit, so that connection with the external driving unit is facilitated.
The common electrode LED chip is applied to a display device or lighting equipment, for example, the display device comprises an array distributed LED display panel, the LED display panel comprises a substrate, an array distributed integrated LED chip and a driving unit, the array is distributed on the substrate, the driving unit is electrically connected with the integrated LED chip, the integrated LED chip is a single integrated LED chip manufactured by the preparation process, the driving unit is an PM driven IC chip, and the driving current of the IC chip can reach mA level.
In the prior art, when the PM-driven IC chip controls the light-emitting unit (such as the LED chip or the package of the LED chip), the light-emitting unit is connected with the LED chip mainly through a connecting wire and a bonding wire which are arranged on a substrate (such as a PCB board) and distributed longitudinally and transversely, the IC chip comprises an anode IC chip and a cathode IC chip, and the first electrode and the second electrode in the integrated LED chip are respectively arranged into a row direction structure and a column direction structure and can be matched with the connection structure of the PM-driven IC chip, so that the connection requirement of the traditional PM-driven IC chip is met, and the specific connection structure of the integrated LED chip and the driving unit is as follows: the first electrodes in the row direction are connected with connecting wires distributed transversely through bonding wires, so that the connection of the LED chip units in the same row with the positive electrode (such as positive electrode IC chips) or the negative electrode of the driving unit is realized, and the second electrodes in the column direction are connected with connecting wires distributed longitudinally through bonding wires, so that the connection of the LED chip units in the same column with the negative electrode (such as negative electrode IC chips) or the positive electrode of the driving unit is realized.
PM driving is the main driving mode of medium-sized display screens, large-sized display screens and ultra-large display screens (the light emitting units are integrated LED chips in the application), so that the integrated LED chips are not limited by electrode structures and driving units, and can be applied to medium-sized display screens (the size is about 10-50 inches), large-sized display screens (the size is about 50-100 inches) or ultra-large display screens (the size is more than about 100 inches).
It is to be understood that the foregoing detailed description of the application is merely illustrative of the application and is not limited to the embodiments of the application. It will be understood by those of ordinary skill in the art that the present application may be modified or substituted for elements thereof to achieve the same technical effects; as long as the use requirement is met, the application is within the protection scope of the application.
Claims (10)
1. A monolithically integrated LED chip, which comprises a first substrate (8) and a plurality of LED chip units (10) distributed on the first substrate (8) in an array, wherein each LED chip unit (10) comprises an epitaxial layer (4), a current expansion layer (5) and a first insulating layer (6) which are sequentially distributed from bottom to top, and the epitaxial layer (4) comprises a first semiconductor layer (401), a light-emitting layer (402) and a second semiconductor layer (403) which are sequentially distributed from bottom to top; the LED chip is characterized by further comprising a first electrode (1) and a second electrode (2), wherein the first electrode (1) is positioned on the back surface of the same row of LED chip units (10) and is used for realizing the serial connection of first semiconductor layers (401) of the same row of LED chip units (10);
the second electrodes (2) are positioned on the front sides of the LED chip units (10) in the same column, the second semiconductor layers (403) of the LED chip units (10) in the same column are connected in series through the current expansion layers (5), a second insulating layer (6) is arranged between the first electrodes (1) and the second electrodes (2), and the second insulating layer (6) is used for preventing the first electrodes (1) from being conducted with the second electrodes (2);
the first electrode (1) is provided with light-transmitting areas, and the light-transmitting areas are in one-to-one correspondence with the light-emitting surfaces of the single LED chip units (10);
the first electrode (1) and the second electrode (2) are used for connecting the LED chip unit (10) with an external circuit or a driving unit, and the driving mode of the driving unit is PM driving;
when the integrated LED chip works, the driving unit controls the corresponding LED chip unit (10) through the first electrode (1) and the second electrode (2).
2. The monolithically integrated LED chip of claim 1, wherein the first semiconductor layer (401) is an N-type semiconductor layer and the second semiconductor layer (403) is a P-type semiconductor layer; the first electrode (1) is an anode, the second electrode (2) is a cathode, and the light-emitting layer (402) is a quantum well layer; the current expansion layer (5) is a conductive layer.
3. The monolithically integrated LED chip of claim 1 or 2, wherein the N-type semiconductor layer is an N-GaN layer or an N-ALGaInP layer and the P-type semiconductor layer is a P-GaN layer or a P-ALGaInP layer.
4. The monolithically integrated LED chip according to claim 1, wherein the material of the first insulating layer (6) is Al 2 O 3 、SiO 2 Film or SiN X A film.
5. The monolithically integrated LED chip of claim 1 or 4, wherein the material of the second insulating layer (7) is SiO 2 、SiNx、AlO 3 Or AlN.
6. The monolithically integrated LED chip according to claim 1, wherein the first electrode (1) comprises a first chip connection portion (101) and a first wire connection portion (102), one end of which extends in the integrated LED chip row direction, the area protruding from the row of LED chip units (10) is the first wire connection portion (102), and the area located below the row of LED chip units (10) is the first chip connection portion (101); the second electrode (2) comprises a second chip connecting part (201) and a second bonding wire connecting part (202), one end of the second electrode extends along the array direction of the LED chip units (10), the area protruding out of the array of the LED chip units (10) is the second bonding wire connecting part (202), the area located below the array of the LED chip units (10) is the second chip connecting part (201), and the first bonding wire connecting part (102) and the second bonding wire connecting part (202) are connected with the driving unit through bonding wires.
7. The monolithically integrated LED chip of claim 6, wherein the first wire bond connections (102) of two adjacent rows of first electrodes (1) are staggered or co-directionally distributed and the second wire bond connections (202) of two adjacent columns of second electrodes (2) are staggered or co-directionally distributed.
8. Monolithically integrated LED chip according to claim 1, characterized in that the first substrate (8) is an opaque substrate.
9. The monolithically integrated LED chip according to claim 1, wherein the LED chip unit (10) has a size of 10 μm to 100 μm.
10. The display device comprises a plurality of LED display panels distributed in an array, wherein each LED display panel comprises a substrate, LED chips distributed on the substrate in an array and a driving unit, and the display device is characterized in that the LED chips are monolithically integrated LED chips according to any one of claims 1, 2, 4 and 6-9, the driving mode of the driving unit is PM driving, and the driving unit is electrically connected with the monolithically integrated LED chips.
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| CN202311149255.XA CN117080337A (en) | 2023-09-07 | 2023-09-07 | Monolithically integrated LED chip and display device |
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