CN117080320B - LED lamp panel and production process thereof - Google Patents
LED lamp panel and production process thereof Download PDFInfo
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- CN117080320B CN117080320B CN202311048873.5A CN202311048873A CN117080320B CN 117080320 B CN117080320 B CN 117080320B CN 202311048873 A CN202311048873 A CN 202311048873A CN 117080320 B CN117080320 B CN 117080320B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000001035 drying Methods 0.000 claims abstract description 33
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 33
- 238000004806 packaging method and process Methods 0.000 claims abstract description 33
- 238000005406 washing Methods 0.000 claims abstract description 33
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000004593 Epoxy Substances 0.000 claims abstract description 30
- 238000001723 curing Methods 0.000 claims abstract description 30
- 239000002994 raw material Substances 0.000 claims abstract description 30
- 239000000178 monomer Substances 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 26
- 125000003396 thiol group Chemical group [H]S* 0.000 claims abstract description 25
- 238000002156 mixing Methods 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000003292 glue Substances 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- HXITXNWTGFUOAU-UHFFFAOYSA-N phenylboronic acid Chemical compound OB(O)C1=CC=CC=C1 HXITXNWTGFUOAU-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 239000003822 epoxy resin Substances 0.000 claims abstract description 18
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 18
- 238000003756 stirring Methods 0.000 claims abstract description 18
- 238000001914 filtration Methods 0.000 claims abstract description 17
- 239000003054 catalyst Substances 0.000 claims abstract description 13
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 claims abstract description 12
- PJUIMOJAAPLTRJ-UHFFFAOYSA-N monothioglycerol Chemical compound OCC(O)CS PJUIMOJAAPLTRJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 8
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052943 magnesium sulfate Inorganic materials 0.000 claims abstract description 6
- 235000019341 magnesium sulphate Nutrition 0.000 claims abstract description 6
- 239000002904 solvent Substances 0.000 claims abstract description 5
- -1 bisphenol A boric acid ester Chemical class 0.000 claims description 31
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 18
- 229920002554 vinyl polymer Polymers 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 13
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 13
- DCQBZYNUSLHVJC-UHFFFAOYSA-N 3-triethoxysilylpropane-1-thiol Chemical compound CCO[Si](OCC)(OCC)CCCS DCQBZYNUSLHVJC-UHFFFAOYSA-N 0.000 claims description 10
- 239000004327 boric acid Substances 0.000 claims description 10
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 claims description 10
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 238000002390 rotary evaporation Methods 0.000 claims description 5
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 4
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 2
- 239000003112 inhibitor Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 14
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 12
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000003999 initiator Substances 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 9
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 8
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 7
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 6
- FKQZIQFNOZXWJU-UHFFFAOYSA-N sulfanyloxyboronic acid Chemical compound OB(O)OS FKQZIQFNOZXWJU-UHFFFAOYSA-N 0.000 description 6
- 238000004132 cross linking Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- LRWZZZWJMFNZIK-UHFFFAOYSA-N 2-chloro-3-methyloxirane Chemical compound CC1OC1Cl LRWZZZWJMFNZIK-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- HTZCNXWZYVXIMZ-UHFFFAOYSA-M benzyl(triethyl)azanium;chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC1=CC=CC=C1 HTZCNXWZYVXIMZ-UHFFFAOYSA-M 0.000 description 4
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical class N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 238000012650 click reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000013035 low temperature curing Methods 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention relates to the technical field of LED lamp panels, in particular to an LED lamp panel and a production process thereof. Step 1: sequentially adding phenylboronic acid and 1-thioglycerol into tetrahydrofuran solvent, and uniformly mixing; adding magnesium sulfate, stirring at room temperature for 24 hours, filtering, concentrating, washing and drying to obtain mercaptoborate; step 2: (1) Modifying graphene oxide by using a vinyl silane coupling agent, and then modifying the graphene oxide by using mercaptoborate to obtain modified graphene oxide; (2) Dispersing a photoinitiator and a catalyst in a solvent to obtain a raw material A; mixing epoxy resin, modified graphene oxide, an epoxy monomer, a raw material A and a sulfhydryl organic silicon resin uniformly in sequence in a dark place to obtain packaging glue solution; step 3: uniformly arranging an LED chip array on a circuit board; and (5) coating packaging glue solution, and curing to obtain the LED lamp panel.
Description
Technical Field
The invention relates to the technical field of LED lamp panels, in particular to an LED lamp panel and a production process thereof.
Background
The LED is a green energy carrier capable of converting electric energy into light; compared with incandescent lamps and fluorescent lamps, the fluorescent lamp has the advantages of small volume, low cost, long service life, energy conservation and the like; is a great leap in human illumination history and is widely applied to devices such as lamps, semiconductors and the like. The LED lamp panel is a device packaged with an LED chip array; the quality of the packaging adhesive for packaging the LED lamp has important influence on the aspects of power, brightness, service life and the like of the LED chip array.
In the prior art, the packaging adhesive is generally epoxy resin or silicone resin; the epoxy resin sealant has higher curing temperature, curing stress and shrinkage, so that the sealant is uneven, the brightness is affected, and the yield is reduced; meanwhile, the heat conductivity is poor, so that the application of the high-power LED is seriously hindered, and the service life is influenced. The silicone resin has good thermal conductivity, but has poor adhesion performance and water resistance, and is easy to cause moisture absorption of the LED chip array, so that the service quality and service life of the LED lamp panel are affected. In addition, the light transmittance of the packaging adhesive is also important, so that the brightness and the color reduction degree are ensured; in the prior art, in order to enhance the heat conductivity, a filler is generally introduced, and the dispersibility of the filler can seriously affect the decrease of the light transmittance, thereby affecting the performance of the LED lamp panel.
Therefore, the problem is solved, and the preparation of the packaging adhesive with good heat dissipation and high transparency for the production of the LED lamp panel has important significance in effectively improving the yield, the service life and the reliability of the LED lamp panel.
Disclosure of Invention
The invention aims to provide an LED lamp panel and a production process thereof, which are used for solving the problems in the background technology.
In order to solve the technical problems, the invention provides the following technical scheme:
a production process of an LED lamp panel comprises the following steps:
step 1: sequentially adding phenylboronic acid and 1-thioglycerol into tetrahydrofuran solvent, and uniformly mixing; adding magnesium sulfate, stirring at room temperature for 24 hours, filtering, concentrating, washing and drying to obtain mercaptoborate;
step 2: (1) Modifying graphene oxide by using a vinyl silane coupling agent, and then modifying the graphene oxide by using mercaptoborate to obtain modified graphene oxide; (2) Dispersing a photoinitiator and a catalyst in a solvent to obtain a raw material A; mixing epoxy resin, modified graphene oxide, an epoxy monomer, a raw material A and a sulfhydryl organic silicon resin uniformly in sequence in a dark place to obtain packaging glue solution;
step 3: uniformly arranging an LED chip array on a circuit board; and (5) coating packaging glue solution, and curing to obtain the LED lamp panel.
More preferably, the raw materials of the packaging glue solution comprise the following components: 40-45 parts of epoxy resin, 5-6 parts of modified graphene oxide, 4-5 parts of epoxy monomer, 0.3-0.5 part of photoinitiator, 0.5-0.7 part of catalyst, 5-8 parts of solvent and 50-55 parts of sulfhydryl organic silicon resin.
More optimally, in the raw materials of the mercaptoborate, the mass ratio of phenylboronic acid to 1-thioglycerol is 1 (0.9-0.92).
More optimally, the preparation method of the modified graphene oxide comprises the following steps: (1) Adding graphene oxide into absolute ethyl alcohol, performing ultrasonic dispersion, adding a vinyl silane coupling agent and deionized water, adding hydrochloric acid to adjust the pH to be 3-3.5, stirring for 30-35 minutes, heating to 60-65 ℃ and continuously stirring for 5 hours, filtering, washing and drying to obtain vinyl graphene; (2) Sequentially adding vinyl graphene, mercaptoborate and a photoinitiator into tetrahydrofuran, performing ultraviolet irradiation reaction, filtering, washing and drying to obtain the modified graphene oxide.
More optimally, in the raw materials of the vinyl graphene, the mass ratio of the graphene oxide to the vinyl silane coupling agent is 1 (0.3-0.4); in the modified graphene oxide, the mass ratio of the vinyl graphene to the mercaptoborate is 1 (0.15-0.2).
More optimally, the preparation method of the sulfhydryl organic silicon resin comprises the following steps: uniformly mixing hexamethyldisiloxane, hydrochloric acid and water; adding dimethoxy diphenyl silane and 3-mercapto propyl triethoxy silane, reacting at 60-70 deg.c for 5-6 hr, washing and drying to obtain mercapto organosilicon resin;
wherein, the raw materials of the sulfhydryl organic silicon resin comprise the following substances: 100 parts of 3-mercaptopropyl triethoxysilane, 15-17 parts of hexamethyldisiloxane, 3.5-4 parts of hydrochloric acid, 5-6 parts of water and 50-55 parts of dimethoxy diphenylsilane.
More optimally, the preparation method of the epoxy monomer comprises the following steps: (1) Adding the o-diallyl bisphenol A, the mercaptoborate, the photoinitiator and the polymerization inhibitor into tetrahydrofuran, performing ultraviolet irradiation reaction, washing, purifying and drying to obtain bisphenol A-based borate; (2) Bisphenol A boric acid ester, a catalyst and epichlorohydrin are uniformly mixed, reacted for 4 to 6 hours at the temperature of 60 to 70 ℃, cooled to 45 to 50 ℃, added with alkali liquor dropwise, reacted for 5 hours at the temperature of 60 to 80 ℃, steamed, washed and dried in a spinning way, and the epoxy monomer is obtained.
More optimally, in the bisphenol A borate, the mass ratio of the O-diallyl bisphenol A to the mercapto borate is 1 (0.35-0.37); in the epoxy monomer, the mass ratio of bisphenol A boric acid ester to epichlorohydrin is 1 (0.5-0.6).
More optimally, the coating thickness is 0.5-2 mm in the coating packaging glue solution; the curing process is as follows: irradiating for 5-10 minutes under ultraviolet light; curing for 20-30 min at 60-70 deg.c and setting pressure of 2-2.5 MPa at 100-105 deg.c for 10-15 min.
More optimally, the LED lamp panel is prepared by the production process of the LED lamp panel.
Compared with the prior art, the beneficial effect of this application:
(1) In the scheme, sulfhydryl organic silicon resin is prepared as a curing agent based on epoxy resin; effectively forming a main body of the packaging glue solution; the two materials are optimized and complemented; the epoxy resin ensures the thermal stability and the adhesiveness of the packaging glue solution; the sulfhydryl organic silicon resin can form a heat conduction network while effectively toughening the epoxy resin, so that the heat dissipation performance of the packaging adhesive is improved. Meanwhile, the sulfhydryl organic silicon resin is used for curing the epoxy resin, so that the epoxy resin has low-temperature curing performance, can effectively reduce curing thermal stress, reduce shrinkage and increase flatness of the packaging adhesive, and therefore, the yield of the LED lamp panel package is improved. Meanwhile, the two materials have reaction compatibility, after solidification, the light transmittance is kept good, and the luminous flux is effectively ensured.
(2) In the scheme, modified graphene is introduced, so that the thermal stability and the heat dissipation are further improved, and the reliability and the service life of the LED lamp panel are enhanced.
The modified graphene is based on graphene oxide, is modified by a vinyl silane coupling agent, and is further grafted in an intercalation manner by utilizing a click reaction of vinyl and mercaptoborate, so that the dispersibility is promoted, and the thermal conductivity is improved; the mercapto borate contains phenyl, pi-pi interaction exists between the mercapto borate and graphene, and the heat conduction effect can be enhanced; meanwhile, the mercapto borate is further modified, and the epoxy monomer can be utilized to further improve the similarity in the packaging adhesive, so that the mercapto borate is effectively dispersed, the interface thermal resistance is reduced, and the thermal conductivity is improved.
The sulfhydryl borate is prepared based on the reaction of phenylboronic acid and 1-thioglycerol, and the formed boron ester bond has good thermal shock resistance and increases thermal stability, so that the service life of the LED lamp panel is prolonged.
Wherein, the epoxy monomer is based on o-diallyl bisphenol A, and is grafted with mercapto borate through allyl and epoxy chlorosilane reaction, and then grafted with epoxy groups, thus the prepared small molecular epoxy monomer has increased crosslinking density, thereby reducing thermal resistance and improving heat dissipation performance; on the other hand, the introduction thereof can promote the uniform dispersion of the modified boron nitride as a medium, thereby suppressing the decrease in light transmittance. In addition, grafting is controlled by controlling the proportion of the O-diallyl bisphenol A and the mercaptoborate, and the residual allyl can be crosslinked with the mercaptosilicone resin by using the grafting, so that the crosslinking density is improved, and the thermal conductivity and the light transmittance are enhanced.
(3) In the scheme, in the curing process, vinyl in an epoxy monomer is firstly used for crosslinking with sulfhydryl organic silicon resin, so that small molecule migration in the subsequent heat curing process is reduced, and a uniform conductive network is formed. Meanwhile, in the heat curing process, pressurizing curing is performed, and the interface crosslinking effect is increased, so that the heat conductivity is improved.
Detailed Description
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that the manufacturers of all the raw materials according to the present invention include, without any particular limitation: in the following examples, phenylboronic acid has a CAS number of 98-80-6, 1-thioglycerol CAS number of 96-27-5, graphene oxide has a product number of G139803, from Allatin, epoxy EPON828 from Guangzhou Kogyo Sunso commercial Co., ltd, hexamethyldisiloxane has a CAS number of 107-46-0, hydrochloric acid concentration of 36wt%, dimethoxydiphenyl silane has a CAS number of 6843-66-9, and 3-mercaptopropyl triethoxysilane has a CAS number of 14814-09-6; the following parts are parts by mass.
Example 1: a production process of an LED lamp panel comprises the following steps:
step 1: (1) Sequentially adding 1 part of phenylboronic acid and 0.9 part of 1-thioglycerol into 20 parts of tetrahydrofuran solvent (containing 0.025 part of water and the balance of tetrahydrofuran), and uniformly mixing; adding in15 parts of magnesium sulfate, stirring for 24 hours at room temperature, filtering, concentrating, washing with methylene dichloride and deionized water, and drying to obtain mercaptoborate; (2) 10 parts of o-diallyl bisphenol A, 0.36 part of mercaptoborate, 0.05 part of photo-initiator AIBN and 0.2 part of hydroquinone are added to 150 parts of tetrahydrofuran, and the reaction is carried out by ultraviolet irradiation: the wavelength is 350nm, and the light intensity is 100mW/cm 2 The time is 30 minutes; washing, purifying and drying to obtain bisphenol A boric acid ester; uniformly mixing 10 parts of bisphenol A boric acid ester, 0.1 part of triethylbenzyl ammonium chloride and 5-6 parts of epoxy chloropropane, reacting for 4 hours at 65 ℃, cooling to 45 ℃, dropwise adding 8 parts of 32wt% sodium hydroxide aqueous solution, reacting for 5 hours at 70 ℃, and performing rotary evaporation, washing and drying to obtain epoxy monomers;
step 2: (1) Adding 10 graphene oxide into 30 parts of absolute ethyl alcohol, performing ultrasonic dispersion, adding 3.5 parts of vinyl trimethoxy silane and 20 parts of deionized water, adding hydrochloric acid to adjust pH=3.2, stirring for 30 minutes, heating to 60 ℃, continuously stirring for 5 hours, filtering, washing and drying to obtain vinyl graphene; 10 parts of vinyl graphene, 1.8 parts of mercaptoborate and 0.02 part of photo-initiator AIBN are sequentially added into 100 parts of tetrahydrofuran, and ultraviolet irradiation reaction is carried out: the wavelength is 350nm, and the light intensity is 100mW/cm 2 The time is 30 minutes, and the modified graphene oxide is obtained through filtration, washing and drying;
(2) Uniformly mixing 16 parts of hexamethyldisiloxane, 3.6 parts of hydrochloric acid and 5 parts of water; adding 52 parts of dimethoxy diphenyl silane and 100 parts of 3-mercaptopropyl triethoxy silane, reacting for 5 hours at 65 ℃, washing and drying to obtain mercapto organic silicon resin;
(3) 0.4 part of photo initiator AIBN and 0.6 part of DBU catalyst are dispersed in 5 parts of acetone to obtain a raw material A; uniformly mixing 42 parts of epoxy resin EPON828, 5 parts of modified graphene oxide, 5 parts of epoxy monomer, raw material A and 53 parts of sulfhydryl organic silicon resin in sequence in a dark place to obtain packaging glue solution;
step 3: uniformly arranging an LED chip array on a circuit board; coating packaging glue solution, wherein the coating thickness is 1mm, and curing: irradiation under ultraviolet light: the wavelength is 350nm, and the light intensity is 150mW/cm 2 The time is 10 minutes; at 70 DEG CCuring for 30 minutes; setting the pressure to 2Mpa at 100 ℃, and curing for 15 minutes to obtain the LED lamp panel.
Example 2: a production process of an LED lamp panel comprises the following steps:
step 1: (1) Sequentially adding 1 part of phenylboronic acid and 0.9 part of 1-thioglycerol into 20 parts of tetrahydrofuran solvent (containing 0.025 part of water and the balance of tetrahydrofuran), and uniformly mixing; adding 15 parts of magnesium sulfate, stirring at room temperature for 24 hours, filtering, concentrating, washing with dichloromethane and deionized water, and drying to obtain mercaptoborate; (2) 10 parts of o-diallyl bisphenol A, 0.36 part of mercaptoborate, 0.05 part of photo-initiator AIBN and 0.2 part of hydroquinone are added to 150 parts of tetrahydrofuran, and the reaction is carried out by ultraviolet irradiation: the wavelength is 350nm, and the light intensity is 100mW/cm 2 The time is 30 minutes; washing, purifying and drying to obtain bisphenol A boric acid ester; uniformly mixing 10 parts of bisphenol A boric acid ester, 0.1 part of triethylbenzyl ammonium chloride and 5-6 parts of epoxy chloropropane, reacting for 4 hours at 65 ℃, cooling to 45 ℃, dropwise adding 8 parts of 32wt% sodium hydroxide aqueous solution, reacting for 5 hours at 70 ℃, and performing rotary evaporation, washing and drying to obtain epoxy monomers;
step 2: (1) Adding 10 graphene oxide into 30 parts of absolute ethyl alcohol, performing ultrasonic dispersion, adding 3.5 parts of vinyl trimethoxy silane and 20 parts of deionized water, adding hydrochloric acid to adjust pH=3.2, stirring for 30 minutes, heating to 60 ℃, continuously stirring for 5 hours, filtering, washing and drying to obtain vinyl graphene; 10 parts of vinyl graphene, 1.8 parts of mercaptoborate and 0.02 part of photo-initiator AIBN are sequentially added into 100 parts of tetrahydrofuran, and ultraviolet irradiation reaction is carried out: the wavelength is 350nm, and the light intensity is 100mW/cm 2 The time is 30 minutes, and the modified graphene oxide is obtained through filtration, washing and drying;
(2) Uniformly mixing 16 parts of hexamethyldisiloxane, 3.6 parts of hydrochloric acid and 5 parts of water; adding 52 parts of dimethoxy diphenyl silane and 100 parts of 3-mercaptopropyl triethoxy silane, reacting for 5 hours at 65 ℃, washing and drying to obtain mercapto organic silicon resin;
(3) Dispersing 0.3 part of photo initiator AIBN and 0.7 part of DBU catalyst in 5 parts of acetone to obtain a raw material A; uniformly mixing 45 parts of epoxy resin EPON828, 6 parts of modified graphene oxide, 4 parts of epoxy monomer, raw material A and 50 parts of sulfhydryl organic silicon resin in sequence in a dark place to obtain packaging glue solution;
step 3: uniformly arranging an LED chip array on a circuit board; coating packaging glue solution, wherein the coating thickness is 1mm, and curing: irradiation under ultraviolet light: the wavelength is 350nm, and the light intensity is 150mW/cm 2 The time is 10 minutes; curing at 70 ℃ for 30 minutes; setting the pressure to 2Mpa at 100 ℃, and curing for 15 minutes to obtain the LED lamp panel.
Example 3: a production process of an LED lamp panel comprises the following steps:
step 1: (1) Sequentially adding 1 part of phenylboronic acid and 0.9 part of 1-thioglycerol into 20 parts of tetrahydrofuran solvent (containing 0.025 part of water and the balance of tetrahydrofuran), and uniformly mixing; adding 15 parts of magnesium sulfate, stirring at room temperature for 24 hours, filtering, concentrating, washing with dichloromethane and deionized water, and drying to obtain mercaptoborate; (2) 10 parts of o-diallyl bisphenol A, 0.36 part of mercaptoborate, 0.05 part of photo-initiator AIBN and 0.2 part of hydroquinone are added to 150 parts of tetrahydrofuran, and the reaction is carried out by ultraviolet irradiation: the wavelength is 350nm, and the light intensity is 100mW/cm 2 The time is 30 minutes; washing, purifying and drying to obtain bisphenol A boric acid ester; uniformly mixing 10 parts of bisphenol A boric acid ester, 0.1 part of triethylbenzyl ammonium chloride and 5-6 parts of epoxy chloropropane, reacting for 4 hours at 65 ℃, cooling to 45 ℃, dropwise adding 8 parts of 32wt% sodium hydroxide aqueous solution, reacting for 5 hours at 70 ℃, and performing rotary evaporation, washing and drying to obtain epoxy monomers;
step 2: (1) Adding 10 graphene oxide into 30 parts of absolute ethyl alcohol, performing ultrasonic dispersion, adding 3.5 parts of vinyl trimethoxy silane and 20 parts of deionized water, adding hydrochloric acid to adjust pH=3.2, stirring for 30 minutes, heating to 60 ℃, continuously stirring for 5 hours, filtering, washing and drying to obtain vinyl graphene; 10 parts of vinyl graphene, 1.8 parts of mercaptoborate and 0.02 part of photo-initiator AIBN are sequentially added into 100 parts of tetrahydrofuran, and ultraviolet irradiation reaction is carried out: the wavelength is 350nm, and the light intensity is 100mW/cm 2 The time is 30 minutes, and the modified graphene oxide is obtained through filtration, washing and drying;
(2) Uniformly mixing 16 parts of hexamethyldisiloxane, 3.6 parts of hydrochloric acid and 5 parts of water; adding 52 parts of dimethoxy diphenyl silane and 100 parts of 3-mercaptopropyl triethoxy silane, reacting for 5 hours at 65 ℃, washing and drying to obtain mercapto organic silicon resin;
(3) Dispersing 0.5 part of photo initiator AIBN and 0.5 part of DBU catalyst in 8 parts of acetone to obtain a raw material A; uniformly mixing 40 parts of epoxy resin EPON828, 5 parts of modified graphene oxide, 5 parts of epoxy monomer, raw material A and 55 parts of sulfhydryl organic silicon resin in sequence in a dark place to obtain packaging glue solution;
step 3: uniformly arranging an LED chip array on a circuit board; coating packaging glue solution, wherein the coating thickness is 1mm, and curing: irradiation under ultraviolet light: the wavelength is 350nm, and the light intensity is 150mW/cm 2 The time is 10 minutes; curing at 70 ℃ for 30 minutes; setting the pressure to 2Mpa at 100 ℃, and curing for 15 minutes to obtain the LED lamp panel.
Comparative example 1: the other components were the same as in example 1 except that mercaptoborate was not introduced, and the following were specific:
step 1: uniformly mixing 10 parts of o-diallyl bisphenol A, 0.1 part of triethylbenzyl ammonium chloride and 5-6 parts of epoxy chloropropane, reacting for 4 hours at 65 ℃, cooling to 45 ℃, dropwise adding 8 parts of 32wt% sodium hydroxide aqueous solution, reacting for 5 hours at 70 ℃, and performing rotary evaporation, washing and drying to obtain an epoxy monomer;
step 2: (1) Adding 10 graphene oxide into 30 parts of absolute ethyl alcohol, performing ultrasonic dispersion, adding 3.5 parts of vinyl trimethoxy silane and 20 parts of deionized water, adding hydrochloric acid to adjust pH=3.2, stirring for 30 minutes, heating to 60 ℃, continuously stirring for 5 hours, filtering, washing and drying to obtain vinyl graphene;
(2) Uniformly mixing 16 parts of hexamethyldisiloxane, 3.6 parts of hydrochloric acid and 5 parts of water; adding 52 parts of dimethoxy diphenyl silane and 100 parts of 3-mercaptopropyl triethoxy silane, reacting for 5 hours at 65 ℃, washing and drying to obtain mercapto organic silicon resin;
(3) 0.4 part of photo initiator AIBN and 0.6 part of DBU catalyst are dispersed in 5 parts of acetone to obtain a raw material A; uniformly mixing 42 parts of epoxy resin EPON828, 5 parts of vinyl graphene, 5 parts of epoxy monomer, raw material A and 53 parts of sulfhydryl organic silicon resin in sequence in a dark place to obtain packaging glue solution;
step 3: uniformly arranging an LED chip array on a circuit board; coating packaging glue solution, wherein the coating thickness is 1mm, and curing: irradiation under ultraviolet light: the wavelength is 350nm, and the light intensity is 150mW/cm 2 The time is 10 minutes; curing at 70 ℃ for 30 minutes; setting the pressure to 2Mpa at 100 ℃, and curing for 15 minutes to obtain the LED lamp panel.
Comparative example 2: no epoxy monomer was introduced, and the rest was the same as in example 1; the difference is that: in the step (3) of the step 2, (3) 0.4 part of photo initiator AIBN and 0.6 part of DBU catalyst are dispersed in 5 parts of acetone to obtain a raw material A; 42 parts of epoxy resin EPON828, 5 parts of modified graphene oxide, 5 parts of epoxy monomer, raw material A and 53 parts of sulfhydryl organic silicon resin are sequentially and uniformly mixed in a dark place to obtain the packaging glue solution.
Comparative example 3: the introduction amount of the epoxy monomer is increased, and the rest is the same as in the embodiment 1; the difference is that: in the step (3) of the step 2, 0.4 part of photo initiator AIBN and 0.6 part of DBU catalyst are dispersed in 5 parts of acetone to obtain a raw material A; 42 parts of epoxy resin EPON828, 5 parts of modified graphene oxide, 10 parts of epoxy monomer, raw material A and 53 parts of sulfhydryl organic silicon resin are sequentially and uniformly mixed in a dark place to obtain the packaging glue solution.
Comparative example 4: the subsequent press curing was not performed, and the rest was the same as in example 1; the difference is that: step 3: uniformly arranging an LED chip array on a circuit board; coating packaging glue solution, wherein the coating thickness is 1mm, and curing: irradiation under ultraviolet light: the wavelength is 350nm, and the light intensity is 150mW/cm 2 The time is 10 minutes; curing at 70 ℃ for 30 minutes; and curing for 15 minutes at 100 ℃ to obtain the LED lamp panel.
Performance test: the encapsulation cement prepared in the examples and comparative examples; coating, curing and forming a film, and detecting the heat conductivity coefficient by using a laser scattering heat conductivity coefficient tester; detecting light transmittance using a light transmittance/haze tester; the data obtained are shown below:
| sample of | Thermal conductivity W/(m K) | Transmittance% |
| Example 1 | 0.256 | 87.4 |
| Example 2 | 0.252 | 86.4 |
| Example 3 | 0.250 | 84.3 |
| Comparative example 1 | 0.229 | 78.3 |
| Comparative example 2 | 0.233 | 82.7 |
| Comparative example 3 | 0.241 | 81.1 |
| Comparative example 4 | 0.242 | 83.7 |
Conclusion: from the data of example 1, the packaging adhesive prepared by the application has excellent heat dissipation and good light transmittance, so that the packaging adhesive has good heat transfer rate when being used for preparing an LED board, thereby effectively improving the high-power reliability and prolonging the service life. Comparing the data of example 1 with comparative examples 1-4, it can be found that: in comparative example 1, mercaptoborate was not introduced, so that the heat conductive property was lowered; in comparative example 2, no epoxy monomer was introduced, and the decrease in thermal conductivity was reduced due to the decrease in crosslinking density; in comparative example 3, the epoxy monomer was introduced more, resulting in partial migration, and thus, performance was lowered; in comparative example 4, no pressure curing was provided, so that the interface effect was reduced, thereby reducing the thermal conductivity.
Finally, it should be noted that: the foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. The production process of the LED lamp panel is characterized by comprising the following steps of: the method comprises the following steps:
step 1: sequentially adding phenylboronic acid and 1-thioglycerol into tetrahydrofuran solvent, and uniformly mixing; adding magnesium sulfate, stirring at room temperature for 24 hours, filtering, concentrating, washing and drying to obtain mercaptoborate;
step 2: (1) Adding the o-diallyl bisphenol A, the mercaptoborate, the photoinitiator and the polymerization inhibitor into tetrahydrofuran, performing ultraviolet irradiation reaction, washing, purifying and drying to obtain bisphenol A-based borate; uniformly mixing bisphenol A boric acid ester, a catalyst and epichlorohydrin, reacting for 4-6 hours at 60-70 ℃, cooling to 45-50 ℃, dropwise adding alkali liquor, reacting for 5 hours at 60-80 ℃, and performing rotary evaporation, washing and drying to obtain an epoxy monomer; in the raw materials of the bisphenol A borate, the mass ratio of the O-diallyl bisphenol A to the mercaptoborate is 10:0.36; in the raw materials of the epoxy monomer, the mass ratio of bisphenol A boric acid ester to epichlorohydrin is 1 (0.5-0.6);
(2) Modifying graphene oxide by using a vinyl silane coupling agent, and then modifying the graphene oxide by using mercaptoborate to obtain modified graphene oxide; (3) Dispersing a photoinitiator and a catalyst in a solvent to obtain a raw material A; (4) Mixing epoxy resin, modified graphene oxide, an epoxy monomer, a raw material A and a sulfhydryl organic silicon resin uniformly in sequence in a dark place to obtain packaging glue solution;
step 3: uniformly arranging an LED chip array on a circuit board; coating packaging glue solution; irradiating for 5-10 minutes under ultraviolet light; curing for 20-30 minutes at 60-70 ℃, and curing for 10-15 minutes at 100-105 ℃ under the pressure of 2-2.5 Mpa; obtaining an LED lamp panel;
the raw materials of the packaging glue solution comprise the following components: 40-45 parts of epoxy resin, 5-6 parts of modified graphene oxide, 4-5 parts of epoxy monomer, 0.3-0.5 part of photoinitiator, 0.5-0.7 part of catalyst, 5-8 parts of solvent and 50-55 parts of sulfhydryl organic silicon resin.
2. The process for producing the LED lamp panel according to claim 1, wherein: in the raw material of the mercaptoborate, the mass ratio of the phenylboronic acid to the 1-thioglycerol is 1 (0.9-0.92).
3. The process for producing the LED lamp panel according to claim 1, wherein: the preparation method of the modified graphene oxide comprises the following steps: (1) Adding graphene oxide into absolute ethyl alcohol, performing ultrasonic dispersion, adding a vinyl silane coupling agent and deionized water, adding hydrochloric acid to adjust the pH to be 3-3.5, stirring for 30-35 minutes, heating to 60-65 ℃ and continuously stirring for 5 hours, filtering, washing and drying to obtain vinyl graphene; (2) Sequentially adding vinyl graphene, mercaptoborate and a photoinitiator into tetrahydrofuran, performing ultraviolet irradiation reaction, filtering, washing and drying to obtain the modified graphene oxide.
4. A process for producing an LED lamp panel according to claim 3, wherein: in the raw materials of the vinyl graphene, the mass ratio of the graphene oxide to the vinyl silane coupling agent is 1 (0.3-0.4); in the raw material of the modified graphene oxide, the mass ratio of the vinyl graphene to the mercaptoborate is 1 (0.15-0.2).
5. The process for producing the LED lamp panel according to claim 1, wherein: the preparation method of the sulfhydryl organic silicon resin comprises the following steps: uniformly mixing hexamethyldisiloxane, hydrochloric acid and water; adding dimethoxy diphenyl silane and 3-mercapto propyl triethoxy silane, reacting at 60-70 deg.c for 5-6 hr, washing and drying to obtain mercapto organosilicon resin;
wherein, the raw materials of the sulfhydryl organic silicon resin comprise the following substances: 100 parts of 3-mercaptopropyl triethoxysilane, 15-17 parts of hexamethyldisiloxane, 3.5-4 parts of hydrochloric acid, 5-6 parts of water and 50-55 parts of dimethoxy diphenylsilane.
6. The process for producing the LED lamp panel according to claim 1, wherein: and in the coating packaging glue solution, the coating thickness is 0.5-2 mm.
7. The LED lamp panel according to any one of claims 1 to 6.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104193995A (en) * | 2014-08-20 | 2014-12-10 | 江西省科学院应用化学研究所 | Organic silicon packaging material for 3D printing devices and preparation method thereof |
| JP2020136577A (en) * | 2019-02-22 | 2020-08-31 | 三菱マテリアル株式会社 | Heat dissipation substrate |
| CN112831364A (en) * | 2021-02-24 | 2021-05-25 | 烟台大学 | Resin-based composite material water-based release agent and preparation method thereof |
| CN112980194A (en) * | 2021-03-04 | 2021-06-18 | 杭州安誉科技有限公司 | LED packaging material and preparation method thereof |
| CN115160925A (en) * | 2022-07-28 | 2022-10-11 | 牛牧 | UV multiple-curing organic-inorganic hybrid fluorine-silicon photodiffusion coating and preparation method thereof |
| CN115746356A (en) * | 2022-12-01 | 2023-03-07 | 深圳市佑明光电有限公司 | Composite film for LED packaging and preparation method thereof |
| CN116589973A (en) * | 2023-05-22 | 2023-08-15 | 珠海市宏科光电子有限公司 | High-temperature-resistant COB packaging adhesive and preparation method thereof |
-
2023
- 2023-08-21 CN CN202311048873.5A patent/CN117080320B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104193995A (en) * | 2014-08-20 | 2014-12-10 | 江西省科学院应用化学研究所 | Organic silicon packaging material for 3D printing devices and preparation method thereof |
| JP2020136577A (en) * | 2019-02-22 | 2020-08-31 | 三菱マテリアル株式会社 | Heat dissipation substrate |
| CN112831364A (en) * | 2021-02-24 | 2021-05-25 | 烟台大学 | Resin-based composite material water-based release agent and preparation method thereof |
| CN112980194A (en) * | 2021-03-04 | 2021-06-18 | 杭州安誉科技有限公司 | LED packaging material and preparation method thereof |
| CN115160925A (en) * | 2022-07-28 | 2022-10-11 | 牛牧 | UV multiple-curing organic-inorganic hybrid fluorine-silicon photodiffusion coating and preparation method thereof |
| CN115746356A (en) * | 2022-12-01 | 2023-03-07 | 深圳市佑明光电有限公司 | Composite film for LED packaging and preparation method thereof |
| CN116589973A (en) * | 2023-05-22 | 2023-08-15 | 珠海市宏科光电子有限公司 | High-temperature-resistant COB packaging adhesive and preparation method thereof |
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