CN117080290A - Schottky junction multichannel photoelectric detector based on micro-ring structure - Google Patents
Schottky junction multichannel photoelectric detector based on micro-ring structure Download PDFInfo
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- CN117080290A CN117080290A CN202310932390.5A CN202310932390A CN117080290A CN 117080290 A CN117080290 A CN 117080290A CN 202310932390 A CN202310932390 A CN 202310932390A CN 117080290 A CN117080290 A CN 117080290A
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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Abstract
The invention discloses a Schottky junction multichannel photoelectric detector based on a micro-ring structure, which comprises the following components: a substrate; the multimode waveguide is connected with the substrate through plate alignment bonding; a plurality of micro-ring structures on the substrate, wherein light absorption areas are grown on the micro-ring structures; growing a metal layer on one side of the light absorption region, and performing ion implantation on the other side to form a doped region; and depositing and leading out a first electrode on the metal layer, depositing and leading out a second electrode on the doped region, and realizing photoelectric conversion by potential difference between the first electrode and the second electrode. The invention couples with the micro-ring resonant cavity through the multimode waveguide, improves the quantum efficiency and the response speed of the light absorbing layer by utilizing the enhancement effect of the micro-ring resonant cavity, and simultaneously improves the absorption efficiency of the detector by simultaneously detecting light with different wavelengths through multiple channels. The invention has simple preparation process, high integration level, low loss and high stability, and is easy to integrate with optical communication devices to form an optoelectronic integrated circuit.
Description
Technical Field
The invention relates to the technical field of photoelectric detection, in particular to a Schottky junction multichannel photoelectric detector based on a micro-ring structure.
Background
With the development of social progress and scientific technology, optical communication technology plays an important role in the modern communication field as an important supporting platform for information technology. The optical communication technology is a communication mode using light as a transmission medium, and has the advantages of large communication capacity, low loss, long transmission distance, strong anti-interference capability and the like because the transmission efficiency of light waves is far higher than that of electric waves. The application and development space of the optical communication technology is very wide, and the optical communication technology becomes a main mode of modern communication, almost replaces the traditional copper cable communication technology and plays an important role in the modern information society. The method is applied to various fields of agriculture, military, medical treatment and the like at present, becomes an important way for improving communication quality and improving communication efficiency, and promotes social and economic development and scientific and technical progress.
In order to meet the information transmission requirements of larger capacity and longer communication distance, the form of the communication equipment is developed from a single channel to a multi-channel parallel transmission direction. Single channel conduction is susceptible to factors such as device size, carrier transit time, bit error rate and the like to limit data transmission flow, and multi-channel parallel transmission can multiply increase the data capacity of a communication system. In addition, the wavelength division multiplexing technology achieves higher data transmission rate by simultaneously transmitting optical signals with different wavelengths in the same optical fiber, and meets the increasing requirement of a data center on bandwidth.
The photoelectric detector is a device for converting radiation energy into an electric signal by utilizing a photoelectric effect, is a key device in an optical communication system, and plays a significant role in important fields such as communication, military, medical treatment, safety monitoring and the like. With the continuous emergence of various novel photoelectric materials, the continuous improvement of semiconductor preparation technology and the continuous innovation of novel structures, a series of performance parameters such as responsivity, quantum efficiency, sensitivity and the like of the photoelectric detector are greatly improved. For example, the resonant cavity enhancement type photoelectric detector with the absorption layer inserted into the resonant cavity can obtain higher quantum efficiency under a thinner absorption layer due to the enhancement effect of the resonant cavity, meanwhile, the transit time of photon-generated carriers in the absorption layer is reduced, and the response speed of the photoelectric detector is improved.
With the development of communication rate and communication quality, the demand for data capacity of communication systems has also increased greatly. In the wavelength division multiplexing system, the arrayed waveguide grating (Arrayed Waveguide Grating) refers to a grating formed by a group of arrayed waveguides with equal length differences, and can separate and transmit light with a plurality of channels, namely different wavelengths, into corresponding channels, so that the transmission capacity of an optical network is greatly increased, but the size is larger, the process compatibility and the integration level are smaller, and the manufacturing process is more difficult. In many cases, a single photo-detector can only detect one type of light, the stability is poor, the responsivity of light absorption is not high, and the system requirement cannot be met, so that an array photo-detector is generated, but the stability of the array photo-detector is low, and the manufacturing process is difficult. In order to meet the requirements of high conversion efficiency, low light energy loss, integration, miniaturization and the like of the photoelectric detector, the invention provides a Schottky junction multichannel photoelectric detector based on a micro-ring structure.
Disclosure of Invention
Aiming at the defects of the optical communication system, such as high capacity, high transmission rate, long-distance data transmission requirement and the problems, the invention provides a Schottky junction multichannel photoelectric detector based on a micro-ring structure.
In order to achieve the above object, the present invention discloses a schottky junction multichannel photodetector based on a micro-ring structure, comprising:
the substrate comprises a top intrinsic layer, a buried oxide layer and a bottom intrinsic layer from top to bottom in sequence;
the multimode waveguide is connected with the substrate through plate alignment bonding;
a plurality of micro-ring structures on the substrate;
a light absorption region grows on the micro-ring structure, a metal layer grows on one side of the light absorption region, and ion implantation is carried out on the other side of the light absorption region to form a doped region;
and a first electrode is deposited and led out on the metal layer, a second electrode is deposited and led out on the doped region, and a potential difference exists between the first electrode and the second electrode to realize photoelectric conversion.
Preferably, the material forming the top intrinsic layer of the microring includes, but is not limited to, one of Si, ge, siC, gaN, gaP, gaAs, inP, inAs, inSb, inGaP.
Preferably, the substrate comprises the top intrinsic layer, a dielectric film on the intrinsic layer, and a cover film covering the dielectric film, the corresponding refractive indices being n1, n2, n3, respectively, with n2> n1> n3, the light being confined to be transmitted within the dielectric film such that the light of the main mode and the plurality of higher modes is simultaneously transported within the waveguide.
Preferably, the number of the micro-ring structures is 10-60.
Preferably, the input light enters the micro-ring structure through the multimode waveguide in an evanescent coupling mode.
Preferably, the plurality of micro-rings have different radii, each micro-ring having a radius of 10 -9 -10 -7 m-order scale.
Preferably, the plurality of micro-ring structures are spaced apart from the multimode waveguide by different distances so that the light absorbing regions can absorb light of different wavelengths.
Preferably, the method can be applied to an optical interconnection system of wavelength division multiplexing, and the multichannel parallel transmission is used for simultaneous detection, so that the data capacity of the communication system is improved, and the data is transmitted.
Compared with the prior art, the invention has the beneficial effects that:
the invention utilizes the enhancement effect of the micro-ring resonant cavity to improve the quantum efficiency and response speed of the light absorbing layer by coupling the multimode waveguide with the micro-ring resonant cavity, simultaneously detects light with different wavelengths through multiple channels, improves the absorption efficiency of the detector, can be applied to an optical interconnection system of wavelength division multiplexing, and increases the data transmission capacity in a communication system. The invention has simple preparation process, high integration level, low loss and high stability, and is easy to integrate with optical communication devices to form an optoelectronic integrated circuit.
Drawings
FIG. 1 is a perspective view of a Schottky junction multichannel photodetector based on a micro-ring structure;
FIG. 2 is a schematic view of the cross-sectional x-z-axis structure of FIG. 1;
FIG. 3 is a schematic top view of the x-y axis of FIG. 1;
FIG. 4 is a side view of the y-z axis of FIG. 1;
FIG. 5 is a flow chart of a Schottky junction multichannel photodetector based on a micro-ring structure;
FIG. 6 is a schematic diagram of the transmission of light in a multimode waveguide and micro-ring structure;
FIG. 7 is a schematic diagram of a micro-ring light field distribution.
Reference numerals:
101. a multimode waveguide; 102. a substrate; 1021. a top intrinsic layer; 1022. an oxygen burying layer; 1023. a bottom intrinsic layer; 103. a microring light absorbing region; 104. a metal layer; 105. a doped region; 106. a first electrode; 107. and a second electrode.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The invention is described in further detail below with reference to the attached drawing figures:
referring to fig. 1-4, the present invention provides a schottky junction multichannel photodetector based on a micro-ring structure, comprising: the multi-mode waveguide 101, the substrate 102, the micro-ring light absorption region 103, the metal layer 104, the doped region 105, the first electrode 106 and the second electrode 107; wherein,
the substrate 102 of the present invention comprises, in order from top to bottom, a top intrinsic layer 1021, a buried oxide layer 1022, and a bottom intrinsic layer 1023; specifically, the material of the top intrinsic layer 1021 includes, but is not limited to, one of Si, ge, siC, gaN, gaP, gaAs, inP, inAs, inSb, inGaP.
In the present invention, a plurality of micro-ring structures 103 are etched on the top intrinsic layer 1021 of the substrate 102. Specifically, the substrate 102 includes a top intrinsic layer 1021, a dielectric film on the top intrinsic layer 1021, and a cover film covering the dielectric film, wherein the refractive index of the top intrinsic layer 1021 is larger than that of the dielectric film, and light is transmitted in the dielectric film, so that light of a main mode and a plurality of higher modes is simultaneously transmitted in the waveguide, and the requirement of a large capacity of a data transmission system can be better met.
In the invention, the micro-ring structure center is a micro-ring light absorption region 103, and two sides of the micro-ring light absorption region 103 are respectively provided with a metal layer 104 and a doped region 105. Specifically, a plurality of micro-ring structures are formed on the top intrinsic layer 1021 through photolithography, light absorption regions 103 are grown on the micro-ring structures, ion implantation is performed on one sides of the micro-ring light absorption regions 103 to form doped regions 104, and a metal layer 105 is grown on the other sides of the micro-ring light absorption regions 103. Input light enters the micro-ring structure through an evanescent wave coupling mode by the multimode waveguide 101 and is absorbed by the micro-ring light absorption region 103, and carriers are generated by utilizing the photoelectric conversion effect. The enhancement effect of the micro-ring resonant cavity enables absorbed light to obtain higher quantum efficiency in the thinner micro-ring absorption region 103, meanwhile, the transit time of photon-generated carriers is reduced, and the response speed of the photoelectric detector is improved.
The present invention sputters the metal layer 104 and the doped region 105 to form the first electrode 106 and the second electrode 107. Specifically, a potential difference exists between the first electrode 106 and the second electrode 107, and photoelectric conversion is achieved.
The number of the micro-ring structures is 10-60, the radiuses of the micro-ring structures are different, and the distances from the micro-ring structures to the multi-mode waveguide are different, so that the micro-ring light absorption region 103 can absorb light with different wavelengths at the same time, multi-channel detection is realized, and the transmission data capacity and the transmission rate are further improved. In a specific embodiment, the multimode waveguide 101 has a width of 500nm, the microring 103 has a radius of 200nm and a thickness of 130nm, and the fabrication technique is compatible with complementary metal oxide semiconductor CMOS.
The invention can be applied to the optical interconnection system of wavelength division multiplexing, and the multichannel parallel transmission is detected simultaneously, thereby improving the data capacity and the transmission rate of the communication system. In a wavelength division multiplexing system, an arrayed waveguide grating (Arrayed Waveguide Grating) refers to a grating formed by a group of arrayed waveguides having equal length differences, and can separate and transmit light of a plurality of channels, i.e., different wavelengths, into corresponding channels, so that the transmission capacity of an optical network is increased. Compared with the AWG, the invention has the advantages of miniaturization, simple preparation process, obvious enhancement of the optical field distribution in the micro-ring cavity of the micro-ring absorption region 103 by utilizing the resonance enhancement effect of the micro-ring cavity, and high absorption efficiency and high responsivity due to the multiplication effect of the photon-generated carriers in the metal layer 104 and the doped region 105. By the structure, the light in the multiple micro-ring structures and the multimode waveguide 101 is transmitted in parallel, so that the light in multiple modes is absorbed by the micro-ring light absorption region 103, the light absorption efficiency is improved, and the multichannel detection is realized. The invention has simple preparation process, high integration level, low loss and high stability, and is easy to integrate with optical communication devices to form an optoelectronic integrated circuit.
Referring to fig. 5, the present invention provides a fabrication method of a schottky junction multi-channel photodetector based on a micro-ring structure,
the initial structure is a substrate, and the substrate 102 sequentially comprises a top intrinsic layer 1021, an oxygen-buried layer 1022 and a bottom intrinsic layer 1023 from top to bottom, as shown in the first structure in fig. 5;
step 1: spin-coating photoresist on the top intrinsic layer 1021, performing deep ultraviolet lithography, and etching to form a plurality of micro-ring structures, such as the second graph structure of fig. 5;
step 2: ion implantation is carried out on one side of the material in the micro-ring structure, and metal is grown on the other side of the material to form a metal layer 104 and a doped region 105, as shown in the third graph structure of fig. 5;
step 3: a layer of SiO is deposited on the micro-ring structure light absorption region 103 by PECVD after etching and ion implantation 2 A film;
step 4: etching openings in the metal layer 104 and the doped region 105, evaporating the electrode metal to form a first electrode 106 and a second electrode 107, and annealing the alloy as in the fourth structure of fig. 5;
step 5: PECVD deposition of a layer of SiO on the fourth patterned structure 2 The layer is then polished, after which a recess is etched as shown in the fifth diagram of fig. 5;
step 6: etching the quartz plate to form a multimode waveguide 101 as shown in a sixth graph of fig. 5;
step 7: multimode waveguide 101 is bonded to the micro-ring structure in register as in the seventh structure of fig. 5.
Referring to fig. 6, in a specific embodiment, two different modes of light are transmitted in the multimode waveguide 101, enter the micro-ring structure through evanescent coupling mode and are absorbed by the micro-ring light absorbing region 103, so as to realize multi-channel simultaneous detection.
The working principle of the invention is as follows:
the input light is transmitted in parallel in the multimode waveguide, part of the light enters the micro-ring structure through an evanescent wave coupling mode and is absorbed by the micro-ring light absorption region 103 to generate carriers through photoelectric effect, and the carriers are accelerated to form more freely moving electron hole pairs under the action of a high electric field to generate current. The microrings with different structures can couple light with different wave bands, so that multichannel detection is realized.
Referring to fig. 7, a schematic diagram of light field distribution in the micro-ring light absorption region 103 is shown, and it can be observed that the micro-ring structure has a better absorption effect.
The invention has the advantages that:
the invention can simultaneously detect light with different wavelengths through multiple channels by coupling the multimode waveguide with the micro-ring resonant cavity, thereby improving the light absorption efficiency of the detector; the detector has simple preparation process and high stability, and is easy to integrate with an optical communication device to form an optoelectronic integrated circuit.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A schottky junction multichannel photodetector based on a micro-ring structure, comprising:
the substrate comprises a top intrinsic layer, a buried oxide layer and a bottom intrinsic layer from top to bottom in sequence;
the multimode waveguide is connected with the substrate through plate alignment bonding;
a plurality of micro-ring structures on the substrate;
a light absorption region grows on the micro-ring structure, a metal layer grows on one side of the light absorption region, and ion implantation is carried out on the other side of the light absorption region to form a doped region;
and a first electrode is deposited and led out on the metal layer, a second electrode is deposited and led out on the doped region, and a potential difference exists between the first electrode and the second electrode to realize photoelectric conversion.
2. The micro-ring structure based schottky junction multi-channel photodetector of claim 1 wherein said micro-ring forming top intrinsic layer material comprises one of Si, ge, siC, gaN, gaP, gaAs, inP, inAs, inSb, inGaP.
3. The micro-ring structure based schottky junction multichannel photodetector of claim 1 wherein said substrate comprises said top intrinsic layer, a dielectric film on said intrinsic layer and a cover film covering said dielectric film, the corresponding refractive indices n1, n2, n3, respectively, where n2> n1> n3 are present, confining light for transmission within the dielectric film such that light of the main mode and the plurality of higher modes are simultaneously transported within the waveguide.
4. The micro-ring structure based schottky junction multichannel photodetector of claim 1 wherein the number of micro-ring structures is 10-60.
5. The micro-ring structure based schottky junction multi-channel photodetector of claim 1 wherein input light is coupled into said micro-ring structure by evanescent coupling from said multimode waveguide.
6. The micro-ring structure based schottky junction multi-channel photodetector of claim 1 wherein said plurality of micro-ring structures have different radii, each micro-ring radius being 10 -9 -10 -7 m-order scale.
7. The micro-ring structure based schottky junction multichannel photodetector of claim 6 wherein said plurality of micro-ring structures are spaced different distances from said multimode waveguide such that said light absorbing regions absorb light of different wavelengths.
8. The schottky junction multichannel photodetector based on the micro-ring structure according to claim 1, wherein the schottky junction multichannel photodetector is applied to an optical interconnection system of wavelength division multiplexing.
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| CN202310932390.5A CN117080290A (en) | 2023-07-27 | 2023-07-27 | Schottky junction multichannel photoelectric detector based on micro-ring structure |
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| CN202310932390.5A CN117080290A (en) | 2023-07-27 | 2023-07-27 | Schottky junction multichannel photoelectric detector based on micro-ring structure |
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