CN117060872A - DC-18GHz high-performance IPD low-pass filter chip - Google Patents

DC-18GHz high-performance IPD low-pass filter chip Download PDF

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Publication number
CN117060872A
CN117060872A CN202310995694.6A CN202310995694A CN117060872A CN 117060872 A CN117060872 A CN 117060872A CN 202310995694 A CN202310995694 A CN 202310995694A CN 117060872 A CN117060872 A CN 117060872A
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CN
China
Prior art keywords
pass filter
transmission
18ghz
ipd
filter chip
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CN202310995694.6A
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Chinese (zh)
Inventor
董建成
杨涛
方建
王勇
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Nanhu Laboratory
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Nanhu Laboratory
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0123—Frequency selective two-port networks comprising distributed impedance elements together with lumped impedance elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/165—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed inductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Filters And Equalizers (AREA)

Abstract

The invention belongs to the technical field of radio frequency integrated circuits, and particularly relates to a DC-18GHz high-performance IPD low-pass filter chip. The DC-18GHz high-performance IPD low-pass filter chip comprises a scribing channel, two grounding-signal-grounding structures, a plurality of transmission lines and a plurality of capacitors, wherein the transmission lines are arranged in the scribing channel, each transmission line comprises a plurality of equivalent inductance transmission lines positioned in a transmission branch, and the equivalent inductance transmission lines and the corresponding capacitors are connected in series and then grounded to form a plurality of transmission zeros. According to the DC-18GHz high-performance IPD low-pass filter chip, the equivalent inductance transmission line is arranged to replace the traditional on-chip inductance, so that the inductance value of the equivalent inductance transmission line reaches the required inductance value, the overall loss is greatly reduced, and the low-loss implementation of the chip is facilitated; the equivalent inductance transmission line is utilized to generate and control a plurality of transmission zeros, so that the roll-off coefficient and the far-band out-of-band suppression capability of the filter are greatly improved, and the overall performance of the chip is improved.

Description

DC-18GHz high-performance IPD low-pass filter chip
Technical Field
The invention belongs to the technical field of radio frequency integrated circuits, and particularly relates to a DC-18GHz high-performance IPD low-pass filter chip.
Background
Along with the continuous development of radio frequency integrated circuits, the requirements of modern communication systems on radio frequency filter chips are increasingly increasing, wherein Integrated Passive Devices, namely the IPD filter chip, is widely paid attention to because of the characteristics of high integration level, low loss, miniaturization, high reliability, low cost and the like. In modern wireless electronic systems, a filter in radio frequency microwaves is better utilized to select useful signals, unwanted signals are filtered out, and particularly, a high-performance low-pass filter chip is more required in the frequency range of DC-18 GHz. The high performance requirements for low-pass filter chips in practical applications are mainly focused on low loss, wide frequency band, high roll-off coefficient, sufficient far-out-of-band rejection, small size, and the like.
In the prior art, as disclosed in chinese patent application with publication number CN1 14866054a, a low-pass filter chip based on IPD technology is proposed, the low-pass filter chip is formed by a dielectric substrate, an input electrode, an output electrode, a plurality of ground electrodes, a plurality of ground vias, a first inductor, a second inductor, a third inductor, a fourth inductor, a fifth inductor, a sixth inductor, a first capacitor, a second capacitor and a third capacitor, and the low-pass filter chip is formed by the seven-order serial elliptic function response low-pass filter circuit. Through simulation design, the input return loss S11 of the low-pass filter chip is smaller than-16.0 dB in the whole DC0 Hz-12 GHz frequency band, which shows that the loss of the radio frequency signal reflected back is small, and the low-pass filter achieves impedance matching.
The prior art has the following problems: (1) The high-frequency blocking low-frequency pass in the frequency range is realized by utilizing a plurality of inductors, the loss of the whole chip is high, and the low-loss performance requirement of the low-pass filter chip is difficult to realize; (2) The inductance area of the traditional on-chip inductor is large, the overall layout of the chip is difficult, and the chip miniaturization is not facilitated.
Disclosure of Invention
The invention aims to provide a DC-18GHz high-performance IPD low-pass filter chip, which has the characteristics of low loss, wide frequency band, high roll-off coefficient, small size, high in-band flatness, sufficient far-band external inhibition and the like.
In order to achieve the above object, the present invention has the following technical scheme:
the DC-18GHz high-performance IPD low-pass filter chip comprises a scribing channel, two grounding-signal-grounding structures, a plurality of transmission lines and a plurality of capacitors, wherein the transmission lines are arranged in the scribing channel, each transmission line comprises a plurality of equivalent inductance transmission lines positioned in a transmission branch, and the equivalent inductance transmission lines and the corresponding capacitors are connected in series and then grounded to form a plurality of transmission zeros.
The DC-18GHz high-performance IPD low-pass filter chip avoids the use of circular inductors and square inductors in PDK (Process Design Kit), and the equivalent inductor transmission line is arranged to replace the traditional on-chip inductor, so that the inductance value of the equivalent inductor transmission line reaches the required inductance value, the overall loss is greatly reduced, and the low-loss implementation of the chip is facilitated; and a plurality of transmission zeros are generated and controlled by using an equivalent inductance transmission line, so that the roll-off coefficient and the far-band out-of-band suppression capability of the filter are greatly improved, and the overall performance of the chip is improved.
In the above-mentioned DC-18GHz high-performance IPD low-pass filter chip, the plurality of transmission lines further includes a plurality of transmission main lines, the plurality of transmission main lines are sequentially connected in series to form a transmission main line, two ends of the transmission main line are respectively connected with two ground-signal-ground structures, and a corresponding equivalent inductance transmission line is connected in parallel at a connection position of the two transmission main lines.
The transmission main lines connected in series on the transmission main lines have little obstruction to radio frequency signals, and the signal passing in the DC-18GHz range is ensured. The invention obtains broadband low-pass filter response with a plurality of transmission zeros by loading a plurality of grounding capacitors on the branches of a plurality of transmission lines connected in series and parallel, and realizes the high-performance IPD low-pass filter chip with the characteristics of low loss, wide bandwidth, high roll-off coefficient, small size, high in-band flatness, sufficient far-band external inhibition and the like.
In the DC-18GHz high-performance IPD low-pass filter chip, the equivalent inductance transmission lines have high distribution parameters at high frequency, and separation gaps are arranged between adjacent equivalent inductance transmission lines.
The invention replaces the traditional on-chip inductor with the extremely strong distribution parameters of the equivalent inductance transmission lines at high frequency, so that the inductance value of the equivalent inductance of each transmission line reaches the required inductance value.
Further, the Q value of the equivalent inductance transmission line is not less than 50 at the 18GHz frequency point.
The Q value of the equivalent inductance transmission line is not less than 50 and is far higher than the Q value of the traditional on-chip inductance by about 20 at the 18GHz frequency point, so that the overall loss is greatly reduced, and the realization of low loss of a chip is facilitated.
In the DC-18GHz high-performance IPD low-pass filter chip, the transmission lines are constructed by forming an equivalent inductance structure through autonomous winding, and the shapes of the transmission lines are different.
The transmission line constructed by adopting the independent winding has different shapes, flexible and changeable layout modes, greatly reduces the inductance area compared with the traditional on-chip inductance, and is beneficial to the realization of the overall layout of the chip and the miniaturization of the chip.
In the DC-18GHz high-performance IPD low-pass filter chip, the low-pass filter chip comprises at least three transmission zero points uniformly distributed at high frequency, and the equivalent inductance transmission line and the corresponding capacitor are connected in series to form a resonator and then reach metal ground through a metallized grounding hole.
The out-of-band signal can be well restrained by distributing at least three transmission zeros, the out-of-band signal restraining degree in the frequency band range is greatly improved, and the filter is guaranteed to have extremely high roll-off coefficient and far-band out-of-band restraining capability.
In the above-mentioned DC-18GHz high-performance IPD low-pass filter chip, the ground-signal-ground structure includes a GSG1 center patch and a GSG2 center patch which can be externally connected to both a signal input port and a signal output port, and the GSG1 center patch and the GSG2 center patch are not externally connected to the same signal input port or signal output port.
Namely, the central patch of the GSG1 is externally connected with the signal input port, and the central patch of the GSG2 is externally connected with the signal output port. Meanwhile, the central patch of the GSG2 can be externally connected with a signal input port, and the central patch of the corresponding GSG1 is externally connected with a signal output port.
Preferably, the transmission line comprises five transmission main lines which are sequentially connected in series to form a transmission main line and four equivalent inductance transmission lines which are positioned in branches, and the capacitor comprises four capacitors which are in one-to-one correspondence with the four equivalent inductance transmission lines.
In the DC-18GHz high-performance IPD low-pass filter chip, the substrate also comprises a substrate, and the substrate material of the substrate is gallium arsenide. Namely, the IPD technology of the GaAs substrate is adopted to prepare the DC-18GHz high-performance IPD low-pass filter chip.
A low pass filter comprising a low pass filter chip, wherein the low pass filter chip is a DC-18GHz high performance IPD low pass filter chip as described in any one of the above.
The physical dimensions of the filter chip are not greater than 1.7mm by 0.7mm.
Based on the IPD technology, the invention loads a plurality of capacitors on the basis of a plurality of transmission lines connected in series and parallel, and replaces the traditional on-chip inductor by utilizing the extremely strong distribution parameters of the transmission lines at high frequency, thereby realizing the DC-18GHz high-performance IPD low-pass filter chip with low loss, wide frequency band, high roll-off coefficient, small size, high in-band flatness and high far-band external suppression.
Compared with the prior art, the invention has the beneficial effects that:
(1) The DC-18GHz high-performance IPD low-pass filter chip avoids the use of round inductors and square inductors in the traditional process, and the equivalent inductor transmission line is arranged to replace the traditional on-chip inductor, so that the inductance value of the equivalent inductor transmission line reaches the required inductance value, the overall loss is greatly reduced, and the low-loss implementation of the chip is facilitated; and a plurality of transmission zeros are generated and controlled by using an equivalent inductance transmission line, so that the roll-off coefficient and the far-band out-of-band suppression capability of the filter are greatly improved, and the overall performance of the chip is improved.
(2) The invention obtains broadband low-pass filter response with a plurality of transmission zeros by loading a plurality of grounding capacitors on the branches of a plurality of transmission lines connected in series and parallel, and realizes the high-performance IPD low-pass filter chip with the characteristics of low loss, wide bandwidth, high roll-off coefficient, small size, high in-band flatness, sufficient far-band external inhibition and the like.
(3) The invention replaces the traditional on-chip inductor with the transmission line with extremely strong distribution parameters at high frequency, so that the inductance value of the equivalent inductor of each transmission line reaches the required inductance value, and the Q value of the equivalent inductor is about 50 at the 18GHz frequency point and is far higher than the Q value of the traditional on-chip inductor, thereby greatly reducing the overall loss and being beneficial to the realization of low loss of chips.
(4) The transmission line constructed by adopting the independent winding has different shapes, flexible and changeable layout modes, greatly reduces the inductance area compared with the traditional on-chip inductance, and is beneficial to the realization of the overall layout of the chip and the miniaturization of the chip.
(5) Based on the IPD technology, the invention loads a plurality of capacitors on the basis of a plurality of transmission lines connected in series and parallel, and replaces the traditional on-chip inductor by utilizing the extremely strong distribution parameters of the transmission lines at high frequency, thereby realizing the DC-18GHz high-performance IPD low-pass filter chip with low loss, wide frequency band, high roll-off coefficient, small size, high in-band flatness and high far-band external suppression.
Drawings
FIG. 1 is a schematic diagram of a circuit structure of a DC-18GHz high-performance IPD low-pass filter chip;
FIG. 2 is a schematic diagram of a full-wave simulation result of a DC-18GHz high-performance IPD low-pass filter chip at-55 ℃;
FIG. 3 is a schematic diagram of a full-wave simulation result of a DC-18GHz high-performance IPD low-pass filter chip at 25 ℃;
FIG. 4 is a schematic diagram of the full-wave simulation result of a DC-18GHz high-performance IPD low-pass filter chip at 85 ℃.
Detailed Description
The following describes the technical scheme of the invention in further detail by using specific embodiments.
Example 1
As shown in fig. 1, the present embodiment provides a DC-18GHz high-performance IPD low-pass filter chip prepared by an IPD process using a GaAs substrate.
The DC-18GHz high-performance IPD low-pass filter chip mainly comprises two grounding-signal-grounding structures, wherein each grounding-signal-grounding structure comprises a GSG1 center patch and a GSG2 center patch which can be externally connected with a signal input port and a signal output port; nine sections of transmission lines of different shapes: the device comprises five transmission main lines L1, L2, L3, L4 and L5 which are sequentially connected in series to form a transmission main path, four equivalent inductance transmission lines La, lb, lc and Ld which are positioned on the branches, four capacitors Ca, cb, cc and Cd which are in one-to-one correspondence with the four equivalent inductance transmission lines, a scribing channel (1) and four metallized grounding holes (2), (3), (4) and (5). The transmission main line L1 is connected to the GSG1, and the transmission main line L5 is connected to the GSG 2.
The equivalent inductance transmission lines La, lb, lc, and Ld are located in the branches, and the equivalent inductance transmission line La is connected in parallel to the junction of the transmission lines L1 and L2, the equivalent inductance transmission line Lb is connected in parallel to the junction of the transmission lines L2 and L3, the equivalent inductance transmission line Lc is connected in parallel to the junction of the transmission lines L3 and L4, and the equivalent inductance transmission line Ld is connected in parallel to the junction of the transmission lines L4 and L5.
The capacitor Ca and the equivalent inductance transmission line La are connected in series and then grounded through a metallized grounding hole (2); the capacitor Cb and the transmission line Lb are connected in series and then grounded through a metallized grounding hole (3); the capacitor Cc and the equivalent inductance transmission line Lc are connected in series and then grounded through a metallized grounding hole (4); the capacitor Cd and the equivalent inductance transmission line Ld are connected in series and then grounded through the metallized grounding hole (5). When the capacitor Ca and the equivalent inductance transmission line La are connected in series, the equivalent inductance transmission line La is equivalent to an on-chip high Q value inductor, so that Ca and La form a resonator a, and when the frequency reaches the resonance frequency, a signal reaches a metal ground through the metallized grounding hole (2), so that a transmission zero point is generated. Similarly, when the resonator b formed by connecting the capacitor Cb and the equivalent inductor transmission line Lb in series is in resonance, the signal reaches the metal ground through the metallized grounding hole (3), so that a transmission zero point is generated; when a resonator c formed by connecting a capacitor Cc and an equivalent inductance transmission line Lc in series is in resonance, a signal reaches a metal ground through a metallized grounding hole (4), so that a transmission zero point is generated; when a resonator d formed by connecting a capacitor Cd and an equivalent inductance of an equivalent inductance transmission line Ld in series resonates, a signal reaches a metal ground through a metallized grounding hole (5), so that a transmission zero point is generated.
All the above circuits are within the area of the scribe line (1), nine sections of transmission lines L1, L2, L3, L4, L5 and La, lb, lc, ld having different shapes are used as inductors having high Q values, respectively.
For the proposed DC-18GHz high-performance IPD low-pass filter chip, the transmission main lines L1, L2, L3, L4 and L5 connected in series on the main circuit have little obstruction to radio frequency signals, and the signal passing in the DC-18GHz range is ensured. The filter has four transmission zeros which are uniformly distributed at high frequency, so that the filter is ensured to have extremely high far-band out-of-band rejection and roll-off coefficients. The bandwidth and matching of the filter are mainly controlled by transmission lines L1, L2, L3, L4, L5 and capacitances Ca, cb, cc, cd, and out-of-band transmission zeros, roll-off coefficients, and far out-of-band rejection are mainly controlled by transmission lines La, lb, lc, ld.
Test case
The DC-18GHZ high-performance IPD low-pass filter chip is prepared into filter chips with physical dimensions of 1.7mm multiplied by 0.7mm, and full-wave simulation tests are respectively carried out at low temperature (-55 ℃), normal temperature (25 ℃) and high temperature (85 ℃).
As shown in fig. 2, fig. 3 and fig. 4, the passband frequency range of the filter chip provided in this embodiment is DC-18GHz, the maximum insertion loss in the passband range is located at 18GHz, the loss is 1.82dB, the losses at 5GHz,10GHz and 15GHz are 0.42d,0.56dB and 0.91dB, respectively, the overall in-band loss is low, and the in-band flatness is excellent. The in-band return loss is higher than 15.9dB, and the in-band impedance matching effect is good.
There are three transmission zeros at the far outside of the band, respectively at 21.65GHz,24.11GHz and 30.2GHz, where there should theoretically be four transmission zeros, and the reason why there are only three actual simulation results is that two transmission zeros are too close to each other, and a phenomenon that two transmission zeros merge with each other occurs. The three distributed transmission zeros well inhibit out-of-band signals, so that the inhibition degree in the range from 21.4GHz to 30GHz is more than 43dB, and the filter is ensured to have extremely high roll-off coefficient and far-band out-of-band inhibition capability.
The specific embodiments described herein are offered by way of example only to illustrate the spirit of the invention. Those skilled in the art may make various modifications or additions to the described embodiments or substitutions thereof without departing from the spirit of the invention or exceeding the scope of the invention as defined in the accompanying claims.

Claims (10)

1. The utility model provides a DC-18GHz high performance IPD low pass filter chip, includes the scribing lane, its characterized in that: the device also comprises two grounding-signal-grounding structures, a plurality of transmission lines and a plurality of capacitors, wherein the transmission lines are arranged in the scribing channel and comprise a plurality of equivalent inductance transmission lines positioned in the transmission branches, and the equivalent inductance transmission lines and the corresponding capacitors are connected in series and then grounded to form a plurality of transmission zeros.
2. The DC-18GHz high performance IPD low pass filter chip of claim 1, wherein: the transmission lines also comprise a plurality of transmission main lines, the transmission main lines are sequentially connected in series to form a transmission main line, two ends of the transmission main line are respectively connected with two grounding-signal-grounding structures, and a corresponding equivalent inductance transmission line is connected in parallel at the joint of the two transmission main lines.
3. The DC-18GHz high performance IPD low pass filter chip of claim 2, wherein: the equivalent inductance transmission lines have high distribution parameters at high frequency, and separation gaps are arranged between adjacent equivalent inductance transmission lines.
4. A DC-18GHz high performance IPD low pass filter chip as claimed in claim 3, wherein: the Q value of the equivalent inductance transmission line is not less than 50 at the 18GHz frequency point.
5. The DC-18GHz high performance IPD low pass filter chip of claim 1, wherein: the transmission lines are constructed by forming an equivalent inductance structure through autonomous winding, and the shapes of the transmission lines are different.
6. The DC-18GHz high performance IPD low pass filter chip of claim 1, wherein: the equivalent inductance transmission line and the corresponding capacitor are connected in series to form a resonator and then reach metal ground through a metallized grounding hole.
7. The DC-18GHz high performance IPD low pass filter chip of claim 1, wherein: the grounding-signal-grounding structure comprises a GSG1 center patch and a GSG2 center patch which can be externally connected with the signal input port and the signal output port, wherein the GSG1 center patch and the GSG2 center patch are not externally connected with the same signal input port or signal output port.
8. The DC-18GHz high performance IPD low pass filter chip of claim 1, wherein: the transmission line comprises five transmission main lines which are sequentially connected in series to form a transmission main path and four equivalent inductance transmission lines which are positioned on the branches, and the capacitors comprise four capacitors which are in one-to-one correspondence with the four equivalent inductance transmission lines.
9. A DC-18GHz high performance IPD low pass filter chip according to any of the claims 1-8, wherein: the semiconductor device further comprises a substrate, wherein the substrate material of the substrate is gallium arsenide.
10. A low pass filter comprising a low pass filter chip characterized by: the low-pass filter chip is a DC-18GHz high-performance IPD low-pass filter chip as claimed in any one of claims 1-8.
CN202310995694.6A 2023-08-08 2023-08-08 DC-18GHz high-performance IPD low-pass filter chip Pending CN117060872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310995694.6A CN117060872A (en) 2023-08-08 2023-08-08 DC-18GHz high-performance IPD low-pass filter chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310995694.6A CN117060872A (en) 2023-08-08 2023-08-08 DC-18GHz high-performance IPD low-pass filter chip

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CN117060872A true CN117060872A (en) 2023-11-14

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