CN117059521A - Thin film deposition equipment, vaporization detection device and vaporization detection method - Google Patents
Thin film deposition equipment, vaporization detection device and vaporization detection method Download PDFInfo
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- 230000008016 vaporization Effects 0.000 title claims abstract description 112
- 238000009834 vaporization Methods 0.000 title claims abstract description 109
- 238000001514 detection method Methods 0.000 title claims abstract description 95
- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 34
- 239000007789 gas Substances 0.000 claims abstract description 121
- 239000000376 reactant Substances 0.000 claims abstract description 69
- 239000012495 reaction gas Substances 0.000 claims abstract description 60
- 239000007788 liquid Substances 0.000 claims abstract description 57
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 239000006200 vaporizer Substances 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 238000010521 absorption reaction Methods 0.000 claims description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 33
- 239000012295 chemical reaction liquid Substances 0.000 claims description 24
- 238000000926 separation method Methods 0.000 claims description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 230000008859 change Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000006096 absorbing agent Substances 0.000 claims 2
- 238000005137 deposition process Methods 0.000 abstract description 5
- 239000013618 particulate matter Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 230000002745 absorbent Effects 0.000 description 10
- 239000002250 absorbent Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000011109 contamination Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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Abstract
Description
技术领域Technical field
本发明涉及半导体加工技术领域,具体涉及了一种薄膜沉积设备、一种汽化检测装置、一种汽化检测方法以及一种计算机可读存储介质。The invention relates to the field of semiconductor processing technology, and specifically to a thin film deposition equipment, a vaporization detection device, a vaporization detection method and a computer-readable storage medium.
背景技术Background technique
在半导体的加工过程中,薄膜沉积设备通常使用汽化的液源作为反应物,例如四乙氧基硅烷(tetraethoxysilane,缩写为TEOS)、水等,因此需要使用到汽化装置来对这些液态反应物进行汽化,使其转为气态。During the processing of semiconductors, thin film deposition equipment usually uses vaporized liquid sources as reactants, such as tetraethoxysilane (TEOS), water, etc., so a vaporization device is needed to process these liquid reactants. Evaporate and turn it into a gaseous state.
液态反应物通过汽化装置后,往往还需通过长路径的输送,才能传送到薄膜沉积设备中进行沉积反应的反应腔体。由于气体的特殊性,通常使用不锈钢管作为输送管路材料。由于不锈钢导热极低,这就使得输送管道难以被加热。在输送过程中如果汽化不充分或气态的反应物中途冷凝,都容易造成极小液滴存在。这些小液滴会影响最后薄膜沉积的质量,导致颗粒污染、沉积薄膜不均匀等一系列问题。After the liquid reactants pass through the vaporization device, they often need to be transported through a long path before they can be transported to the reaction chamber in the thin film deposition equipment where the deposition reaction is performed. Due to the special characteristics of gas, stainless steel pipes are usually used as transportation pipeline materials. Since stainless steel has extremely low thermal conductivity, it makes the delivery pipes difficult to heat. During the transportation process, if the vaporization is insufficient or the gaseous reactants are condensed midway, it is easy to cause the existence of very small droplets. These small droplets will affect the quality of the final film deposition, leading to a series of problems such as particle contamination and uneven deposited films.
为了解决现有技术中存在的上述问题,本领域亟需一种薄膜沉积技术,能够有效检测出即将进入反应腔体内的反应气体的汽化效率,避免反应气体汽化不完全而导致沉积过程中的颗粒污染、沉积薄膜不均匀等一系列问题。In order to solve the above-mentioned problems existing in the prior art, the field is in urgent need of a thin film deposition technology that can effectively detect the vaporization efficiency of the reaction gas that is about to enter the reaction chamber, and avoid particles during the deposition process caused by incomplete vaporization of the reaction gas. A series of problems such as contamination and uneven deposited films.
发明内容Contents of the invention
以下给出一个或多个方面的简要概述以提供对这些方面的基本理解。此概述不是所有构想到的方面的详尽综览,并且既非旨在指认出所有方面的关键性或决定性要素亦非试图界定任何或所有方面的范围。其唯一的目的是要以简化形式给出一个或多个方面的一些概念以为稍后给出的更加详细的描述之前序。A brief overview of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all contemplated aspects and is intended to neither identify key or critical elements of all aspects nor attempt to delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.
为了克服现有技术存在的上述缺陷,本发明提供了一种薄膜沉积设备、一种汽化检测装置、一种汽化检测方法以及一种计算机可读存储介质,能够有效检测出即将进入反应腔体内的反应气体的汽化效率,避免反应气体汽化不完全而导致沉积过程中的颗粒污染、沉积薄膜不均匀等一系列问题。In order to overcome the above-mentioned defects of the prior art, the present invention provides a thin film deposition equipment, a vaporization detection device, a vaporization detection method and a computer-readable storage medium, which can effectively detect the vapor that is about to enter the reaction chamber. The vaporization efficiency of the reaction gas avoids a series of problems such as particle contamination during the deposition process and uneven deposited films caused by incomplete vaporization of the reaction gas.
具体来说,根据本发明的第一方面提供的上述薄膜沉积设备,包括:汽化器,用于汽化液态的反应物,以形成反应气体;反应腔体,经由管道连接所述汽化器,用于从所述汽化器获取所述反应气体,以进行薄膜沉积;以及汽化检测装置,设于所述汽化器与所述反应腔体之间,用于检测所述反应物的汽化度,以允许或阻止所述反应物进入所述反应腔体。Specifically, the above-mentioned thin film deposition equipment provided according to the first aspect of the present invention includes: a vaporizer for vaporizing liquid reactants to form reaction gas; a reaction chamber connected to the vaporizer via a pipeline for extracting from the The vaporizer obtains the reaction gas for thin film deposition; and a vaporization detection device is provided between the vaporizer and the reaction chamber for detecting the vaporization degree of the reactant to allow or prevent the reaction. material enters the reaction chamber.
进一步地,在本发明的一些实施例中,汽化后的所述反应物包括中间气体,所述汽化检测装置包括检测箱,其顶部设有吸收板,并且所述检测箱内填充标准气体,通过所述标准气体的密度对所述中间气体进行气液分离,以获得所述反应气体,所述反应气体上浮至所述吸收板,被所述吸收板吸收。Further, in some embodiments of the present invention, the vaporized reactants include intermediate gases, the vaporization detection device includes a detection box with an absorption plate on the top, and the detection box is filled with a standard gas. The density of the standard gas is used to perform gas-liquid separation of the intermediate gas to obtain the reaction gas. The reaction gas floats to the absorption plate and is absorbed by the absorption plate.
进一步地,在本发明的一些实施例中,所述检测箱中的所述标准气体的密度大于所述反应气体的密度且小于所述中间气体中的反应液体的密度,所述中间气体中的反应气体在所述标准气体的环境下悬浮上升,所述中间气体中的反应液体在所述标准气体的环境下坠落下降。Further, in some embodiments of the present invention, the density of the standard gas in the detection box is greater than the density of the reaction gas and less than the density of the reaction liquid in the intermediate gas, and the density of the reaction liquid in the intermediate gas is The reaction gas floats and rises in the environment of the standard gas, and the reaction liquid in the intermediate gas falls and falls in the environment of the standard gas.
进一步地,在本发明的一些实施例中,所述标准气体包括密度为0.9g/cm3的氮气,所述反应液体包括密度为1g/cm3的水,所述反应气体包括密度为0.6g/cm3的水蒸汽。Further, in some embodiments of the present invention, the standard gas includes nitrogen with a density of 0.9g/cm 3 , the reaction liquid includes water with a density of 1 g/cm 3 , and the reaction gas includes nitrogen with a density of 0.6g /cm 3 of water vapor.
进一步地,在本发明的一些实施例中,所述吸收板中包括吸收剂,与所述反应气体产生化学吸收反应。Further, in some embodiments of the present invention, the absorbent plate includes an absorbent, which causes a chemical absorption reaction with the reactive gas.
进一步地,在本发明的一些实施例中,薄膜沉积设备还包括加热装置,所述加热装置至少设置于所述检测箱内,以对所述标准气体进行加热。Further, in some embodiments of the present invention, the thin film deposition equipment further includes a heating device, which is at least disposed in the detection box to heat the standard gas.
进一步地,在本发明的一些实施例中,所述汽化检测装置包括前端分离机,所述前端分离机对所述中间气体进行初次气液分离,并将分离出的气态的反应物通入所述检测箱。Further, in some embodiments of the present invention, the vaporization detection device includes a front-end separator, which performs primary gas-liquid separation on the intermediate gas and passes the separated gaseous reactants into the The detection box.
进一步地,在本发明的一些实施例中,所述前端分离机包括离心装置,通过所述离心装置的高速旋转,分离出所述中间气体中的反应气体。Further, in some embodiments of the present invention, the front-end separator includes a centrifugal device, and the reaction gas in the intermediate gas is separated by high-speed rotation of the centrifugal device.
此外,根据本发明的第二方面提供的上述汽化检测装置,包括:检测箱,设有进气口,获取汽化后的液态的反应物构成的中间气体,所述检测箱内填充标准气体;吸收板,设置于所述检测箱的顶部,通过所述标准气体的密度,对所述中间气体进行气液分离,以获得反应气体,所述反应气体上浮至所述吸收板,被所述吸收板吸收,根据所述吸收板吸收前后的重量变化,以及所述反应物的初始重量,确定所述反应物的汽化度。In addition, the above-mentioned vaporization detection device provided according to the second aspect of the present invention includes: a detection box provided with an air inlet to obtain an intermediate gas composed of vaporized liquid reactants, and the detection box is filled with a standard gas; A plate is arranged on the top of the detection box. The intermediate gas is separated into gas and liquid according to the density of the standard gas to obtain a reaction gas. The reaction gas floats to the absorption plate and is absorbed by the absorption plate. Absorption, the vaporization degree of the reactant is determined based on the weight change before and after absorption by the absorption plate and the initial weight of the reactant.
此外,根据本发明的第三方面提供的上述汽化检测方法,包括以下步骤:获取汽化后的液态的反应物构成的中间气体;根据标准气体的密度,对所述中间气体进行气液分离,以获得反应气体;以及通过吸收板吸收所述反应气体,并根据所述吸收板吸收前后的重量变化,以及所述反应物的初始重量,确定所述反应物的汽化度。In addition, according to the above-mentioned vaporization detection method provided in the third aspect of the present invention, the method includes the following steps: obtaining an intermediate gas composed of vaporized liquid reactants; performing gas-liquid separation on the intermediate gas according to the density of the standard gas, so as to Obtain the reaction gas; and absorb the reaction gas through the absorption plate, and determine the vaporization degree of the reactant based on the weight change before and after absorption by the absorption plate and the initial weight of the reactant.
此外,根据本发明的第四方面还提供了一种计算机可读存储介质,其上存储有计算机指令。所述计算机指令被处理器执行时,实施本发明的第三方面提供的上述的汽化检测方法。In addition, according to a fourth aspect of the present invention, there is also provided a computer-readable storage medium having computer instructions stored thereon. When the computer instructions are executed by the processor, the above-mentioned vaporization detection method provided by the third aspect of the present invention is implemented.
附图说明Description of the drawings
在结合以下附图阅读本公开的实施例的详细描述之后,能够更好地理解本发明的上述特征和优点。在附图中,各组件不一定是按比例绘制,并且具有类似的相关特性或特征的组件可能具有相同或相近的附图标记。The above-described features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.
图1示出了根据本发明的一些实施例所提供的一种薄膜沉积设备的结构框图;Figure 1 shows a structural block diagram of a thin film deposition equipment provided according to some embodiments of the present invention;
图2示出了根据本发明的一些实施例所提供的一种汽化检测装置的结构示意图;以及Figure 2 shows a schematic structural diagram of a vaporization detection device provided according to some embodiments of the present invention; and
图3示出了根据本发明的一些实施例所提供的一种汽化检测方法的流程图。Figure 3 shows a flow chart of a vaporization detection method provided according to some embodiments of the present invention.
附图标记:Reference signs:
10 薄膜沉积设备;10 Thin film deposition equipment;
100 汽化器;100 carburetor;
200 汽化检测装置;200 vaporization detection device;
210 检测箱;210 test box;
211 吸收板;211 absorbent plate;
220 标准气体;220 standard gas;
230 前端分离机;230 front-end separator;
231 进气口;231 air inlet;
232 出气口;232 air outlet;
300 反应腔体;300 reaction chamber;
410 反应气体;410 Reactive gases;
420 反应液体;420 reaction liquid;
S310~S330 步骤。Steps S310~S330.
具体实施方式Detailed ways
以下由特定的具体实施例说明本发明的实施方式,本领域技术人员可由本说明书所揭示的内容轻易地了解本发明的其他优点及功效。虽然本发明的描述将结合优选实施例一起介绍,但这并不代表此发明的特征仅限于该实施方式。恰恰相反,结合实施方式作发明介绍的目的是为了覆盖基于本发明的权利要求而有可能延伸出的其它选择或改造。为了提供对本发明的深度了解,以下描述中将包含许多具体的细节。本发明也可以不使用这些细节实施。此外,为了避免混乱或模糊本发明的重点,有些具体细节将在描述中被省略。The implementation of the present invention is described below with specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the invention will be described in conjunction with a preferred embodiment, this does not mean that the features of the invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiments is to cover other options or modifications that may be extended based on the claims of the invention. The following description contains numerous specific details in order to provide a thorough understanding of the invention. The invention may be practiced without these details. Furthermore, some specific details will be omitted from the description in order to avoid confusing or obscuring the focus of the present invention.
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。In the description of the present invention, it should be noted that, unless otherwise clearly stated and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense. For example, it can be a fixed connection or a detachable connection. Connection, or integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood on a case-by-case basis.
另外,在以下的说明中所使用的“上”、“下”、“左”、“右”、“顶”、“底”、“水平”、“垂直”应被理解为该段以及相关附图中所绘示的方位。此相对性的用语仅是为了方便说明之用,其并不代表其所叙述的装置需以特定方位来制造或运作,因此不应理解为对本发明的限制。In addition, "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the paragraph and related appendixes. The orientation shown in the figure. This relative terminology is only for convenience of explanation. It does not mean that the device described needs to be manufactured or operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.
能理解的是,虽然在此可使用用语“第一”、“第二”、“第三”等来叙述各种组件、区域、层和/或部分,这些组件、区域、层和/或部分不应被这些用语限定,且这些用语仅是用来区别不同的组件、区域、层和/或部分。因此,以下讨论的第一组件、区域、层和/或部分可在不偏离本发明一些实施例的情况下被称为第二组件、区域、层和/或部分。It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various components, regions, layers and/or sections, these components, regions, layers and/or sections These terms should not be limited and are only used to distinguish between different components, regions, layers and/or sections. Thus, a first component, region, layer or section discussed below could be termed a second component, region, layer or section without departing from some embodiments of the invention.
如上所述,在半导体的加工过程中,薄膜沉积设备通常使用汽化的液源作为反应物,例如四乙氧基硅烷(tetraethoxysilane,缩写为TEOS)、水等,因此需要使用到汽化装置来对这些液态反应物进行汽化,使其转为气态。液态反应物通过汽化装置后,往往还需通过长路径的输送,才能传送到薄膜沉积设备中进行沉积反应的反应腔体。由于气体的特殊性,通常使用不锈钢管作为输送管路材料。由于不锈钢导热极低,这就使得输送管道难以被加热。在输送过程中如果汽化不充分或气态的反应物中途冷凝,都容易造成极小液滴存在。这些小液滴会影响最后薄膜沉积的质量,导致颗粒污染、沉积薄膜不均匀等一系列问题。As mentioned above, during the processing of semiconductors, thin film deposition equipment usually uses vaporized liquid sources as reactants, such as tetraethoxysilane (TEOS), water, etc., so a vaporization device is needed to process these The liquid reactants are vaporized and converted into gaseous state. After the liquid reactants pass through the vaporization device, they often need to be transported through a long path before they can be transported to the reaction chamber in the thin film deposition equipment where the deposition reaction is performed. Due to the special characteristics of gas, stainless steel pipes are usually used as transportation pipeline materials. Since stainless steel has extremely low thermal conductivity, it makes the delivery pipes difficult to heat. During the transportation process, if the vaporization is insufficient or the gaseous reactants are condensed midway, it is easy to cause the existence of very small droplets. These small droplets will affect the quality of the final film deposition, leading to a series of problems such as particle contamination and uneven deposited films.
为了解决现有技术中存在的上述问题,本发明提供了一种薄膜沉积设备、一种汽化检测装置、一种汽化检测方法以及一种计算机可读存储介质,能够有效检测出即将进入反应腔体内的反应气体的汽化效率,避免反应气体汽化不完全而导致沉积过程中的颗粒污染、沉积薄膜不均匀等一系列问题。In order to solve the above-mentioned problems existing in the prior art, the present invention provides a thin film deposition equipment, a vaporization detection device, a vaporization detection method and a computer-readable storage medium, which can effectively detect the impending entry into the reaction chamber. The vaporization efficiency of the reaction gas can be improved to avoid a series of problems such as particle contamination during the deposition process and uneven deposited films caused by incomplete vaporization of the reaction gas.
在一些非限制性的实施例中,本发明的第一方面提供的上述薄膜沉积设备中可以配置本发明的第二方面提供的上述汽化检测装置。另外,本发明的第三方面提供的上述汽化检测方法也可以由上述第二方面提供的汽化检测装置实施。In some non-limiting embodiments, the above-mentioned thin film deposition equipment provided by the first aspect of the present invention can be configured with the above-mentioned vaporization detection device provided by the second aspect of the present invention. In addition, the above-mentioned vaporization detection method provided in the third aspect of the present invention can also be implemented by the vaporization detection device provided in the above-mentioned second aspect.
首先,请参看图1,图1示出了根据本发明的一些实施例所提供的一种薄膜沉积设备的结构框图。First, please refer to FIG. 1 , which shows a structural block diagram of a thin film deposition equipment provided according to some embodiments of the present invention.
如图1所示,在本发明的一些实施例中,薄膜沉积设备10主要可以包括:汽化器100,可以用于汽化液态的反应物,以形成反应气体;反应腔体300,可以经由管道连接汽化器100,用于从汽化器100获取反应气体,以进行薄膜沉积。由于在实际通过汽化器100的汽化过程中,液态反应物的汽化率无法达到百分百,因而获得的反应气体中会包括一些小液滴,这些小液滴如若进入到后续的反应腔体300中,会影响到沉积出的薄膜质量。因此,在汽化器100与反应腔体300之间可以设置汽化检测装置200,主要用于检测反应物的汽化度,从而进一步允许或阻止反应物进入反应腔体300。As shown in Figure 1, in some embodiments of the present invention, the thin film deposition equipment 10 may mainly include: a vaporizer 100, which can be used to vaporize liquid reactants to form reaction gas; a reaction chamber 300, which can be connected to the vaporizer via a pipeline 100, used to obtain reaction gas from the vaporizer 100 for thin film deposition. Since the vaporization rate of the liquid reactant cannot reach 100% during the actual vaporization process through the vaporizer 100, the obtained reaction gas will include some small droplets. If these small droplets enter the subsequent reaction chamber 300 , will affect the quality of the deposited film. Therefore, a vaporization detection device 200 may be provided between the vaporizer 100 and the reaction chamber 300 , mainly for detecting the vaporization degree of the reactants, thereby further allowing or preventing the reactants from entering the reaction chamber 300 .
当汽化检测装置200检测出反应物的汽化度符合目标汽化度后,可以继续向汽化器100通入液态反应物汽化,并将经由汽化检测装置200检测后其余的反应气体通入反应腔体300中。当汽化检测装置200检测出反应物的汽化度没有符合目标汽化度,则可以通过在汽化检测装置200和反应腔体300的输送管路中设置阀门截断,以阻止反应气体通入反应腔体300中。When the vaporization detection device 200 detects that the vaporization degree of the reactant meets the target vaporization degree, the liquid reactant can be continuously introduced into the vaporizer 100 for vaporization, and the remaining reaction gas detected by the vaporization detection device 200 can be introduced into the reaction chamber 300 . When the vaporization detection device 200 detects that the vaporization degree of the reactant does not meet the target vaporization degree, a valve can be provided in the delivery pipeline between the vaporization detection device 200 and the reaction chamber 300 to prevent the reaction gas from flowing into the reaction chamber 300 middle.
具体来说,参看图2,图2示出了根据本发明的一些实施例所提供的一种汽化检测装置的结构示意图。Specifically, referring to Figure 2, Figure 2 shows a schematic structural diagram of a vaporization detection device provided according to some embodiments of the present invention.
在一些实施例中,由于通过汽化器100直接汽化获得反应气体中会包括小液滴,为了方便描述,本发明中将包括小液滴的反应气体定义为中间气体,还需对其进行后续处理。也就是说,汽化后的反应物可以定义为中间气体。In some embodiments, since the reaction gas obtained by direct vaporization by the vaporizer 100 may include small droplets, for convenience of description, the reaction gas including small droplets is defined as an intermediate gas in the present invention, and subsequent processing is required. In other words, the vaporized reactants can be defined as intermediate gases.
如图2所示,汽化检测装置200可以包括检测箱210,其顶部设有吸收板211,并且检测箱210内填充标准气体220,通过标准气体220的密度可以对中间气体进行气液分离,以获得反应气体410。反应气体410上浮至接触到吸收板211,被吸收板211吸收。As shown in Figure 2, the vaporization detection device 200 may include a detection box 210 with an absorption plate 211 on the top, and the detection box 210 is filled with a standard gas 220. The intermediate gas can be separated into gas and liquid through the density of the standard gas 220, so as to Reaction gas 410 is obtained. The reaction gas 410 floats up to contact the absorption plate 211 and is absorbed by the absorption plate 211 .
具体来说,检测箱210中的标准气体的密度可以大于中间气体中的反应气体410的密度,并且小于中间气体中的反应液体420的密度。如图2所示,这样,中间气体中的反应气体410可以在检测箱210内的标准气体220的环境下悬浮上升,而中间气体中的反应液体420可以在检测箱210内的标准气体220的环境下坠落下降,从而实现气液分离。Specifically, the density of the standard gas in the detection box 210 may be greater than the density of the reaction gas 410 in the intermediate gas, and less than the density of the reaction liquid 420 in the intermediate gas. As shown in Figure 2, in this way, the reaction gas 410 in the intermediate gas can float and rise in the environment of the standard gas 220 in the detection box 210, and the reaction liquid 420 in the intermediate gas can float in the environment of the standard gas 220 in the detection box 210. It falls and descends in the environment to achieve gas-liquid separation.
举例来说,可选地,作为反应物用于薄膜沉积的中间气体可以包括水蒸气和液态水。中间气体中的反应液体420可以为液态水,其密度为1g/cm3,对应地,中间气体中的反应气体410就可以是水蒸气,其密度0.6g/cm3。对此,在密闭的检测箱210中,标准气体220可以选用氮气,其密度在0.9g/cm3左右。在密闭的充满氮气的检测箱210中,由于氮气的密度大于水蒸气的密度且小于液体水的密度,氮气可以有助于密度较小的水蒸气上浮。中间气体中的水蒸气可以借助于氮气的浮力作用,在充满氮气的环境下悬浮上升,而中间气体中的液态水就在充满氮气的环境下坠落下降,从而实现了分离蒸汽及液滴的效果。并且,由于通入的中间气体量较少,短时间不会使检测箱210内气压变化,影响密度分离效果。For example, optionally, intermediate gases used as reactants for thin film deposition may include water vapor and liquid water. The reaction liquid 420 in the intermediate gas may be liquid water with a density of 1g/cm 3 . Correspondingly, the reaction gas 410 in the intermediate gas may be water vapor with a density of 0.6g/cm 3 . In this regard, in the sealed detection box 210, nitrogen can be selected as the standard gas 220, and its density is about 0.9g/ cm3 . In the closed detection box 210 filled with nitrogen, since the density of nitrogen is greater than the density of water vapor and less than the density of liquid water, nitrogen can help water vapor with a smaller density float to float. The water vapor in the intermediate gas can float and rise in a nitrogen-filled environment with the help of the buoyancy of nitrogen, while the liquid water in the intermediate gas falls and falls in a nitrogen-filled environment, thus achieving the effect of separating steam and liquid droplets. . Moreover, since the amount of intermediate gas introduced is small, the air pressure in the detection box 210 will not change in a short period of time, which will affect the density separation effect.
进一步地,在一些优选的实施例中,检测箱210内可以设置加热装置(图2中未绘示出),通过加热装置使检测箱210内的标准气体(例如氮气)变为高温气体,形成一个密闭高温的检测环境,从而可以避免反应气体(例如水蒸气)受冷液化。Furthermore, in some preferred embodiments, a heating device (not shown in FIG. 2 ) may be provided in the detection box 210 , and the heating device can change the standard gas (such as nitrogen) in the detection box 210 into a high-temperature gas to form A sealed high-temperature detection environment to prevent reactive gases (such as water vapor) from being cooled and liquefied.
本领域的技术人员可以理解,上述反应气体410为水蒸气、反应液体420为液态水、标准气体220为氮气的方案,只是本发明提供的一种非限制性的实施方式,旨在清楚地展示本发明的主要构思,并提供一种便于公众实施的具体方案,而非用于限制本发明的保护范围。本领域的技术人员可以根据不同反应物,选择不同的填充检测箱210的标准气体220、以及对应的吸收板211的吸收剂,因而本发明的适用范围极广。Those skilled in the art can understand that the above solution in which the reaction gas 410 is water vapor, the reaction liquid 420 is liquid water, and the standard gas 220 is nitrogen is only a non-limiting implementation provided by the present invention and is intended to be clearly demonstrated. The main idea of the present invention is to provide a specific solution that is convenient for the public to implement, but is not used to limit the protection scope of the present invention. Those skilled in the art can select different standard gases 220 for filling the detection box 210 and corresponding absorbents for the absorption plate 211 according to different reactants, so the present invention has a very wide scope of application.
在一些实施例中,检测箱210内的吸收板211中可以包括吸收剂,吸收板211中的吸收剂与反应气体可以产生化学吸收反应。举例来说,对于上述反应气体410为水蒸气的实施例,吸收板211中的吸收剂可以为无水氯化钙或氢氧化钙等可与水发生吸收反应的吸收剂。In some embodiments, the absorbent plate 211 in the detection box 210 may include absorbent, and the absorbent in the absorbent plate 211 and the reactive gas may produce a chemical absorption reaction. For example, for the above embodiment in which the reactive gas 410 is water vapor, the absorbent in the absorbing plate 211 may be an absorbent that can absorb and react with water, such as anhydrous calcium chloride or calcium hydroxide.
在上述优选的实施例中,吸收板211设置于检测箱210内的顶部,分离出的反应气体410需要上浮至检测箱210的顶部,才可以被吸收板211吸收,有利于进一步增大中间气体中分离出的反应气体410和反应液体420之间的空间,避免吸收板211误与反应液体420发生化学吸收反应,影响后续汽化检测的准确度。In the above preferred embodiment, the absorption plate 211 is arranged at the top of the detection box 210. The separated reaction gas 410 needs to float to the top of the detection box 210 before it can be absorbed by the absorption plate 211, which is conducive to further increasing the amount of intermediate gas. The space between the separated reaction gas 410 and the reaction liquid 420 prevents the absorption plate 211 from accidentally chemically absorbing the reaction liquid 420 and affecting the accuracy of subsequent vaporization detection.
在本发明的一些实施例中,可以根据吸收板211吸收反应气体410前后的重量变化,以及反应物的初始重量,确定反应物的汽化度。In some embodiments of the present invention, the vaporization degree of the reactant can be determined based on the weight change before and after the absorbing plate 211 absorbs the reaction gas 410 and the initial weight of the reactant.
具体来说,确定吸收板211的初始重量A0,在吸收板211吸收完反应气体410(例如水蒸汽)后,再次确定吸收板211的重量A1,获取吸收板211的初始重量A0和当前重量A1的重量之差A1-A0。获取未经汽化器100之前的液态的反应物的重量B1,根据重量之差A1-A0和液态的反应物初始重量B1的比值,可以确定反应物的汽化度,汽化度为(A1-A0)/B1,完成汽化效率检测。Specifically, the initial weight A0 of the absorption plate 211 is determined. After the absorption plate 211 absorbs the reaction gas 410 (such as water vapor), the weight A1 of the absorption plate 211 is determined again, and the initial weight A0 and the current weight A1 of the absorption plate 211 are obtained. The weight difference is A1-A0. Obtain the weight B1 of the liquid reactant before the vaporizer 100. According to the ratio of the weight difference A1-A0 to the initial weight B1 of the liquid reactant, the vaporization degree of the reactant can be determined. The degree of vaporization is (A1-A0)/ B1, complete the vaporization efficiency test.
进一步地,如图2所示,在另一些优选的实施例中,为了能够将汽化后的反应物中的反应气体410和反应液体420分离完全,汽化检测装置200还可以包括前端分离机230。前端分离机230可以设置于检测箱210的外部,与检测箱210通过管路连接。可选地,如图2所示,前端分离机230也可以设置于检测箱210内部,以减小汽化检测装置200的整体空间占用率。Further, as shown in FIG. 2 , in some other preferred embodiments, in order to completely separate the reaction gas 410 and the reaction liquid 420 in the vaporized reactants, the vaporization detection device 200 may also include a front-end separator 230 . The front-end separator 230 can be installed outside the detection box 210 and connected to the detection box 210 through pipelines. Optionally, as shown in FIG. 2 , the front-end separator 230 can also be disposed inside the detection box 210 to reduce the overall space occupation of the vaporization detection device 200 .
前端分离机230可以用于对汽化器100汽化后的初始中间气体进行初次气液分离,并将分离出的气态的反应物通入检测箱210,在检测箱210内通过标准气体220和吸收板211进行二次气液分离,然后进行汽化检测。The front-end separator 230 can be used to perform initial gas-liquid separation of the initial intermediate gas after vaporization in the vaporizer 100, and pass the separated gaseous reactants into the detection box 210, where they pass through the standard gas 220 and the absorption plate 211. Carry out secondary gas-liquid separation, and then conduct vaporization detection.
如图2所示,在一些可选的实施例中,前端分离机230中可以包括离心装置(图2中未绘示出)。由于半导体加工所用气体流速极快,例如,8~80m/s,可以适用于包括离心装置的分离机要求。汽化器100汽化后的初始中间气体通过进气口231进入前端分离机230,通过离心装置的高速旋转时所产生的离心力,初始中间气体中的反应液体沿旋转方向的切线方向飞出,从而可以将反应气体从初始中间气体的气流(初始中间气体的气流方向如图2中的螺旋状表示)中分离出来。将完成初次气液分离后的中间气体通过出气口232排出,对排出的反应气体410和反应液体420再进行上述基于标准气体220密度的二次气液分离。由于反应液体420所受的离心力远大于重力和惯性力,因而通过离心结构进行气液分离的分离效率较高。As shown in Figure 2, in some optional embodiments, the front-end separator 230 may include a centrifugal device (not shown in Figure 2). Since the gas flow rate used in semiconductor processing is extremely fast, for example, 8 to 80 m/s, it can be applied to the requirements of separators including centrifugal devices. The initial intermediate gas vaporized by the vaporizer 100 enters the front-end separator 230 through the air inlet 231. Through the centrifugal force generated by the high-speed rotation of the centrifugal device, the reaction liquid in the initial intermediate gas flies out along the tangential direction of the rotation direction, so that the reaction liquid can be The reaction gas is separated from the initial intermediate gas flow (the direction of the initial intermediate gas flow is represented by a spiral in Figure 2). The intermediate gas after the primary gas-liquid separation is completed is discharged through the gas outlet 232, and the discharged reaction gas 410 and reaction liquid 420 are subjected to the above-mentioned secondary gas-liquid separation based on the density of the standard gas 220. Since the centrifugal force experienced by the reaction liquid 420 is much greater than gravity and inertial force, the separation efficiency of gas-liquid separation through the centrifugal structure is relatively high.
请继续回到图1,在通过汽化检测装置200检测出液态的反应物的汽化度后,可以进一步判断允许或阻止该反应物进入反应腔体300。Please continue to return to FIG. 1 . After the vaporization degree of the liquid reactant is detected by the vaporization detection device 200 , it can be further determined whether to allow or prevent the reactant from entering the reaction chamber 300 .
具体来说,在一些实施例中,在连通汽化检测装置200和反应腔体300的管路中可以包括门阀结构。可以预设汽化阈值以对应目标汽化度,响应于检测出的液态反应物的汽化度超过汽化阈值,表示当前反应物的汽化度达到了目标汽化度,满足汽化要求,其中不包括小液滴,或小液滴含量极少,可以将其继续通入至反应腔体300。如若响应于检测出的液态反应物的汽化度小于汽化阈值,表示当前反应物的汽化度未达到目标汽化度,不满足汽化要求,其中含有较多的小液滴,可以选择将其关闭门阀,以避免反应物进入至反应腔体300。进一步地,可选地,还可以通过另一管路将汽化不达标的反应物继续传输至汽化器100,以将其二次汽化。Specifically, in some embodiments, a gate valve structure may be included in the pipeline connecting the vaporization detection device 200 and the reaction chamber 300 . The vaporization threshold can be preset to correspond to the target vaporization degree. In response to the detected vaporization degree of the liquid reactant exceeding the vaporization threshold, it means that the vaporization degree of the current reactant has reached the target vaporization degree and meets the vaporization requirements, which does not include small droplets. Or if the content of small droplets is very small, they can continue to be passed into the reaction chamber 300 . If the vaporization degree of the liquid reactant detected in response is less than the vaporization threshold, it means that the vaporization degree of the current reactant has not reached the target vaporization degree and does not meet the vaporization requirements. It contains more small droplets. You can choose to close the valve. To prevent reactants from entering the reaction chamber 300. Furthermore, optionally, the reactants whose vaporization does not meet the standard can also be continuously transported to the vaporizer 100 through another pipeline to vaporize them for a second time.
接下来,请参看图3,图3示出了根据本发明的一些实施例所提供的一种汽化检测方法的流程图。Next, please refer to Figure 3, which shows a flow chart of a vaporization detection method provided according to some embodiments of the present invention.
如图3所示,在本发明的一些实施例中,汽化检测方法可以主要包括以下步骤:As shown in Figure 3, in some embodiments of the present invention, the vaporization detection method may mainly include the following steps:
S310:获取汽化后的液态的反应物构成的中间气体。S310: Obtain the intermediate gas composed of the vaporized liquid reactants.
具体来说,在一些实施例中,本发明中将通过汽化器100直接汽化获得的包括小液滴的反应气体定义为中间气体。Specifically, in some embodiments, the reaction gas including small droplets obtained by direct vaporization by the vaporizer 100 is defined as an intermediate gas in the present invention.
进一步地,在一些优选的实施例中,可以对上述汽化器100汽化后的初始中间气体进行初次气液分离。具体来说,可以通过汽化检测装置200中的前端分离机230,其中可以包括离心装置(图2中未绘示出)。汽化器100汽化后的初始中间气体通过进气口231进入前端分离机230,通过离心装置的高速旋转时所产生的离心力,初始中间气体中的反应液体沿旋转方向的切线方向飞出,从而可以将反应气体从初始中间气体的气流中分离出来。将完成初次气液分离后的中间气体通过出气口232排出,对排出的反应气体410和反应液体420再进行上述基于标准气体220密度的二次气液分离。由于反应液体420所受的离心力远大于重力和惯性力,因而通过离心结构进行气液分离的分离效率较高。Furthermore, in some preferred embodiments, primary gas-liquid separation can be performed on the initial intermediate gas vaporized by the above-mentioned vaporizer 100 . Specifically, it can be through the front-end separator 230 in the vaporization detection device 200, which can include a centrifugal device (not shown in Figure 2). The initial intermediate gas vaporized by the vaporizer 100 enters the front-end separator 230 through the air inlet 231. Through the centrifugal force generated by the high-speed rotation of the centrifugal device, the reaction liquid in the initial intermediate gas flies out along the tangential direction of the rotation direction, so that the reaction liquid can be The reaction gas is separated from the initial flow of intermediate gas. The intermediate gas after the primary gas-liquid separation is completed is discharged through the gas outlet 232, and the discharged reaction gas 410 and reaction liquid 420 are subjected to the above-mentioned secondary gas-liquid separation based on the density of the standard gas 220. Since the centrifugal force experienced by the reaction liquid 420 is much greater than gravity and inertial force, the separation efficiency of gas-liquid separation through the centrifugal structure is relatively high.
接下来可以执行步骤S320:根据标准气体的密度,对中间气体进行气液分离,以获得反应气体。Next, step S320 can be performed: perform gas-liquid separation on the intermediate gas according to the density of the standard gas to obtain the reaction gas.
在一些实施例中,汽化检测装置200可以包括检测箱210,其顶部设有吸收板211,并且检测箱210内填充标准气体220,通过标准气体220的密度可以对中间气体进行气液分离,以获得反应气体410。反应气体410上浮至接触到吸收板211,被吸收板211吸收。In some embodiments, the vaporization detection device 200 may include a detection box 210 with an absorption plate 211 on the top, and the detection box 210 is filled with a standard gas 220. The intermediate gas can be separated into gas and liquid through the density of the standard gas 220, so as to Reaction gas 410 is obtained. The reaction gas 410 floats up to contact the absorption plate 211 and is absorbed by the absorption plate 211 .
具体来说,检测箱210中的标准气体的密度可以大于中间气体中的反应气体410的密度,并且小于中间气体中的反应液体420的密度。这样,中间气体中的反应气体410可以在检测箱210内的标准气体220的环境下悬浮上升,而中间气体中的反应液体420可以在检测箱210内的标准气体220的环境下坠落下降,从而实现二次气液分离。Specifically, the density of the standard gas in the detection box 210 may be greater than the density of the reaction gas 410 in the intermediate gas, and less than the density of the reaction liquid 420 in the intermediate gas. In this way, the reaction gas 410 in the intermediate gas can float and rise in the environment of the standard gas 220 in the detection box 210, and the reaction liquid 420 in the intermediate gas can fall and fall in the environment of the standard gas 220 in the detection box 210, thereby Achieve secondary gas-liquid separation.
举例来说,可选地,作为反应物用于薄膜沉积的中间气体可以包括水蒸气和液态水。也就是说,中间气体中的反应液体420可以为水,水的密度为1g/cm3,对应地,中间气体中的反应气体410就可以是水蒸气,水蒸气的密度0.6g/cm3。对此,在密闭的检测箱210中,标准气体220可以选用氮气,氮气的密度在0.9g/cm3左右。在密闭的充满氮气的检测箱210中,由于氮气的密度大于水蒸气的密度且小于液体水的密度,氮气可以有助于密度较小的水蒸气上浮。中间气体中的水蒸气可以借助于氮气的浮力作用,在充满氮气的环境下悬浮上升,中间气体中的液态水就在充满氮气的环境下坠落下降,从而实现了二次分离蒸汽及液滴的效果。For example, optionally, intermediate gases used as reactants for thin film deposition may include water vapor and liquid water. That is to say, the reaction liquid 420 in the intermediate gas can be water, and the density of water is 1g/cm3. Correspondingly, the reaction gas 410 in the intermediate gas can be water vapor, and the density of water vapor is 0.6g/ cm3 . In this regard, in the sealed detection box 210, nitrogen can be selected as the standard gas 220, and the density of nitrogen is about 0.9g/ cm3 . In the closed detection box 210 filled with nitrogen, since the density of nitrogen is greater than the density of water vapor and less than the density of liquid water, nitrogen can help water vapor with a smaller density float to float. The water vapor in the intermediate gas can float and rise in an environment full of nitrogen with the help of the buoyancy of nitrogen, while the liquid water in the intermediate gas falls and falls in an environment full of nitrogen, thus achieving the secondary separation of steam and droplets. Effect.
接下来可以执行步骤S330:通过吸收板吸收反应气体,并根据吸收板吸收前后的重量变化,以及反应物的初始重量,确定反应物的汽化度。Next, step S330 can be performed: absorb the reaction gas through the absorption plate, and determine the vaporization degree of the reactant based on the weight change before and after absorption by the absorption plate and the initial weight of the reactant.
具体来说,在一些实施例中,确定吸收板211的初始重量A0,在吸收板211吸收完反应气体410(例如水蒸汽)后,再次确定吸收板211的重量A1,获取吸收板211的初始重量A0和当前重量A1的重量之差A1-A0。获取未经汽化器100之前的液态的反应物的重量B1,根据重量之差A1-A0和液态的反应物初始重量B1的比值,可以确定反应物的汽化度,汽化度为(A1-A0)/B1,完成汽化效率检测。Specifically, in some embodiments, the initial weight A0 of the absorption plate 211 is determined. After the absorption plate 211 absorbs the reaction gas 410 (such as water vapor), the weight A1 of the absorption plate 211 is determined again to obtain the initial weight A1 of the absorption plate 211 . The weight difference A1-A0 between the weight A0 and the current weight A1. Obtain the weight B1 of the liquid reactant before the vaporizer 100. According to the ratio of the weight difference A1-A0 to the initial weight B1 of the liquid reactant, the vaporization degree of the reactant can be determined. The degree of vaporization is (A1-A0)/ B1, complete the vaporization efficiency test.
尽管为使解释简单化将上述方法图示并描述为一系列动作,但是应理解并领会,这些方法不受动作的次序所限,因为根据一个或多个实施例,一些动作可按不同次序发生和/或与来自本文中图示和描述或本文中未图示和描述但本领域技术人员可以理解的其他动作并发地发生。Although the methods described above are illustrated and described as a sequence of acts to simplify explanation, it should be understood and appreciated that the methods are not limited by the order of the acts, as some acts may occur in a different order in accordance with one or more embodiments. and/or occur concurrently with other actions illustrated and described herein or not illustrated and described herein but understood by those skilled in the art.
本发明的另一方面还提供了一种计算机可读存储介质,其上存储有计算机指令,可以用以实施本发明的第三方面提供的上述汽化检测方法。Another aspect of the present invention also provides a computer-readable storage medium on which computer instructions are stored, which can be used to implement the above-mentioned vaporization detection method provided by the third aspect of the present invention.
本领域的技术人员可以理解,上述这些汽化检测方法的实施例只是本发明提供的一些非限制性的实施方式,旨在清楚地展示本发明的主要构思,并提供一些便于公众实施的具体方案,而非用于限制该汽化检测装置200、以及薄膜沉积设备10的全部工作方式或全部功能。同样地,该汽化检测装置200、以及薄膜沉积设备10也只是本发明提供的一种非限制性的实施方式,不对这些汽化检测方法中各步骤的实施主体构成限制。Those skilled in the art can understand that the above-mentioned examples of vaporization detection methods are only some non-limiting implementations provided by the present invention, and are intended to clearly demonstrate the main concepts of the present invention and provide some specific solutions that are convenient for the public to implement. It is not used to limit all working modes or all functions of the vapor detection device 200 and the thin film deposition equipment 10 . Similarly, the vaporization detection device 200 and the thin film deposition equipment 10 are only non-limiting implementations provided by the present invention, and do not limit the implementation of each step in these vaporization detection methods.
综上所述,本发明提供了一种薄膜沉积设备、一种汽化检测装置、一种汽化检测方法以及一种计算机可读存储介质,能够有效检测出即将进入反应腔体内的反应气体的汽化效率,避免反应气体汽化不完全而导致沉积过程中的颗粒污染、沉积薄膜不均匀等一系列问题。To sum up, the present invention provides a thin film deposition equipment, a vaporization detection device, a vaporization detection method and a computer-readable storage medium, which can effectively detect the vaporization efficiency of the reaction gas that is about to enter the reaction chamber. , to avoid a series of problems such as particle contamination and uneven deposited films during the deposition process caused by incomplete vaporization of the reaction gas.
提供对本公开的先前描述是为使得本领域任何技术人员皆能够制作或使用本公开。对本公开的各种修改对本领域技术人员来说都将是显而易见的,且本文中所定义的普适原理可被应用到其他变体而不会脱离本公开的精神或范围。由此,本公开并非旨在被限定于本文中所描述的示例和设计,而是应被授予与本文中所公开的原理和新颖性特征相一致的最广范围。The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
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