CN117059521A - Thin film deposition equipment, vaporization detection device and vaporization detection method - Google Patents

Thin film deposition equipment, vaporization detection device and vaporization detection method Download PDF

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Publication number
CN117059521A
CN117059521A CN202311013077.8A CN202311013077A CN117059521A CN 117059521 A CN117059521 A CN 117059521A CN 202311013077 A CN202311013077 A CN 202311013077A CN 117059521 A CN117059521 A CN 117059521A
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gas
vaporization
reactant
reaction
thin film
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鞠子辰
谈太德
章志敏
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Tuojing Chuangyi Shenyang Semiconductor Equipment Co ltd
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Tuojing Chuangyi Shenyang Semiconductor Equipment Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

The invention discloses a thin film deposition device, a vaporization detection device and a vaporization detection method. The thin film deposition apparatus includes: a vaporizer for vaporizing a reactant in a liquid state to form a reactant gas; the reaction cavity is connected with the vaporizer through a pipeline and is used for acquiring the reaction gas from the vaporizer so as to perform film deposition; and the vaporization detection device is arranged between the vaporizer and the reaction cavity and is used for detecting the vaporization degree of the reactant so as to allow or prevent the reactant from entering the reaction cavity. By using the thin film deposition equipment, the vaporization efficiency of the reaction gas which is about to enter the reaction cavity can be effectively detected, and a series of problems of particle pollution, uneven deposited thin film and the like in the deposition process caused by incomplete vaporization of the reaction gas are avoided.

Description

Thin film deposition equipment, vaporization detection device and vaporization detection method
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to thin film deposition equipment, a vaporization detection device, a vaporization detection method and a computer readable storage medium.
Background
In the processing of semiconductors, thin film deposition apparatuses generally use a vaporized liquid source such as tetraethoxysilane (abbreviated as TEOS), water, etc., and thus a vaporization device is required to vaporize these liquid reactants to be gaseous.
After passing through the vaporizing device, the liquid reactant is often conveyed to a reaction cavity for carrying out deposition reaction in the thin film deposition equipment through long-path conveying. Stainless steel pipes are commonly used as the material for the transfer line due to the specificity of the gas. This makes the transfer tubing difficult to heat because of the extremely low heat conduction of stainless steel. The presence of very small droplets is easily caused during transport if insufficient vaporization or if gaseous reactants condense partway through. These droplets can affect the quality of the final film deposition, leading to a series of problems such as particle contamination, non-uniformity of the deposited film, etc.
In order to solve the above problems in the prior art, a thin film deposition technology is needed in the art, which can effectively detect the vaporization efficiency of the reaction gas to be introduced into the reaction chamber, and avoid a series of problems such as particle pollution, non-uniformity of deposited thin film and the like in the deposition process caused by incomplete vaporization of the reaction gas.
Disclosure of Invention
The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.
In order to overcome the above-mentioned drawbacks of the prior art, the present invention provides a thin film deposition apparatus, a vaporization detection device, a vaporization detection method, and a computer readable storage medium, which can effectively detect the vaporization efficiency of a reaction gas to be introduced into a reaction chamber, and avoid a series of problems such as particle pollution, non-uniformity of a deposited thin film, etc. caused by incomplete vaporization of the reaction gas.
Specifically, the thin film deposition apparatus provided according to the first aspect of the present invention includes: a vaporizer for vaporizing a reactant in a liquid state to form a reactant gas; the reaction cavity is connected with the vaporizer through a pipeline and is used for acquiring the reaction gas from the vaporizer so as to perform film deposition; and the vaporization detection device is arranged between the vaporizer and the reaction cavity and is used for detecting the vaporization degree of the reactant so as to allow or prevent the reactant from entering the reaction cavity.
Further, in some embodiments of the present invention, the vaporized reactant includes an intermediate gas, the vaporization detection device includes a detection tank, an absorption plate is disposed at the top of the detection tank, and the detection tank is filled with a standard gas, and the intermediate gas is subjected to gas-liquid separation by the density of the standard gas, so as to obtain the reaction gas, and the reaction gas floats to the absorption plate and is absorbed by the absorption plate.
Further, in some embodiments of the invention, the density of the standard gas in the detection tank is greater than the density of the reactive gas and less than the density of the reactive liquid in the intermediate gas, the reactive gas in the intermediate gas being suspended in the environment of the standard gas and the reactive liquid in the intermediate gas being dropped in the environment of the standard gas.
Further, in some embodiments of the invention, the standard gas comprises a density of 0.9g/cm 3 The reaction liquid comprising nitrogen having a density of 1g/cm 3 The reaction gas includes water having a density of 0.6g/cm 3 Is a water vapor of (a).
Further, in some embodiments of the invention, an absorber is included in the absorber plate to produce a chemical absorption reaction with the reactant gas.
Further, in some embodiments of the present invention, the thin film deposition apparatus further includes a heating device disposed at least in the detection chamber to heat the standard gas.
Further, in some embodiments of the invention, the vaporization detection apparatus includes a front end separator that performs a primary gas-liquid separation of the intermediate gas and passes the separated gaseous reactants into the detection chamber.
Further, in some embodiments of the invention, the front end separator includes a centrifugal device, and the reaction gas in the intermediate gas is separated by high-speed rotation of the centrifugal device.
Further, the above vaporization detection apparatus provided according to the second aspect of the present invention includes: the detection box is provided with an air inlet, and is used for acquiring intermediate gas formed by the vaporized liquid reactant, and standard gas is filled in the detection box; the absorption plate is arranged at the top of the detection box, the gas-liquid separation is carried out on the intermediate gas through the density of the standard gas, so that reaction gas is obtained, floats to the absorption plate and is absorbed by the absorption plate, and the vaporization degree of the reactant is determined according to the weight change before and after the absorption of the absorption plate and the initial weight of the reactant.
Further, the above vaporization detection method according to the third aspect of the present invention includes the steps of: obtaining intermediate gas formed by vaporized liquid reactants; according to the density of the standard gas, carrying out gas-liquid separation on the intermediate gas to obtain a reaction gas; and absorbing the reaction gas by an absorbing plate, and determining the vaporization degree of the reactant according to the weight change before and after the absorption by the absorbing plate and the initial weight of the reactant.
Further, according to a fourth aspect of the present invention, there is also provided a computer-readable storage medium having stored thereon computer instructions. The computer instructions, when executed by a processor, implement the above-mentioned vaporization detection method provided by the third aspect of the present invention.
Drawings
The above features and advantages of the present invention will be better understood after reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily to scale and components having similar related features or characteristics may have the same or similar reference numerals.
FIG. 1 illustrates a block diagram of a thin film deposition apparatus provided according to some embodiments of the present invention;
FIG. 2 illustrates a schematic diagram of a vaporization detection apparatus provided in accordance with some embodiments of the present invention; and
fig. 3 illustrates a flow chart of a vaporization detection method provided in accordance with some embodiments of the present invention.
Reference numerals:
10. a thin film deposition apparatus;
100. a vaporizer;
200. a vaporization detection device;
210. a detection box;
211. an absorption plate;
220. a standard gas;
230. a front separator;
231. an air inlet;
232. an air outlet;
300. a reaction chamber;
410. a reaction gas;
420. a reaction liquid;
s310 to S330.
Detailed Description
Further advantages and effects of the present invention will become apparent to those skilled in the art from the disclosure of the present specification, by describing the embodiments of the present invention with specific examples. While the description of the invention will be presented in connection with a preferred embodiment, it is not intended to limit the inventive features to that embodiment. Rather, the purpose of the invention described in connection with the embodiments is to cover other alternatives or modifications, which may be extended by the claims based on the invention. The following description contains many specific details for the purpose of providing a thorough understanding of the present invention. The invention may be practiced without these specific details. Furthermore, some specific details are omitted from the description in order to avoid obscuring the invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" as used in the following description should be understood as referring to the orientation depicted in this paragraph and the associated drawings. This relative terminology is for convenience only and is not intended to be limiting of the invention as it is described in terms of the apparatus being manufactured or operated in a particular orientation.
It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms and these terms are merely used to distinguish between different elements, regions, layers and/or sections. Accordingly, a first component, region, layer, and/or section discussed below could be termed a second component, region, layer, and/or section without departing from some embodiments of the present invention.
As described above, in the process of semiconductor processing, thin film deposition apparatuses generally use a vaporized liquid source such as tetraethoxysilane (abbreviated as TEOS), water, etc., and thus a vaporization device is required to vaporize these liquid reactants to be gaseous. After passing through the vaporizing device, the liquid reactant is often conveyed to a reaction cavity for carrying out deposition reaction in the thin film deposition equipment through long-path conveying. Stainless steel pipes are commonly used as the material for the transfer line due to the specificity of the gas. This makes the transfer tubing difficult to heat because of the extremely low heat conduction of stainless steel. The presence of very small droplets is easily caused during transport if insufficient vaporization or if gaseous reactants condense partway through. These droplets can affect the quality of the final film deposition, leading to a series of problems such as particle contamination, non-uniformity of the deposited film, etc.
In order to solve the above problems in the prior art, the present invention provides a thin film deposition apparatus, a vaporization detection device, a vaporization detection method, and a computer readable storage medium, which can effectively detect vaporization efficiency of a reaction gas to be introduced into a reaction chamber, and avoid a series of problems such as particle pollution, non-uniformity of a deposited thin film, etc. caused by incomplete vaporization of the reaction gas.
In some non-limiting embodiments, the vaporization detection device provided in the second aspect of the present invention may be configured in the thin film deposition apparatus provided in the first aspect of the present invention. In addition, the vaporization detection method provided in the third aspect of the present invention may be implemented by the vaporization detection device provided in the second aspect.
Referring first to fig. 1, fig. 1 illustrates a block diagram of a thin film deposition apparatus according to some embodiments of the present invention.
As shown in fig. 1, in some embodiments of the present invention, a thin film deposition apparatus 10 may mainly include: vaporizer 100, which may be used to vaporize reactants in a liquid state to form a reactant gas; the reaction chamber 300 may be connected to the vaporizer 100 via a pipe for taking out a reaction gas from the vaporizer 100 for thin film deposition. Since the vaporization rate of the liquid reactant cannot reach a percentage during the actual vaporization process through the vaporizer 100, the obtained reaction gas may include some small droplets, which may affect the quality of the deposited film if entering the subsequent reaction chamber 300. Accordingly, a vaporization detection device 200 may be provided between the vaporizer 100 and the reaction chamber 300, mainly for detecting the vaporization degree of the reactant, thereby further allowing or preventing the reactant from entering the reaction chamber 300.
When the vaporization detection device 200 detects that the vaporization degree of the reactant meets the target vaporization degree, the vaporizer 100 may be continuously introduced with the liquid reactant for vaporization, and the remaining reactant gas detected by the vaporization detection device 200 may be introduced into the reaction chamber 300. When the vaporization detection device 200 detects that the vaporization degree of the reactant does not meet the target vaporization degree, the valve cut-off can be arranged in the delivery pipelines of the vaporization detection device 200 and the reaction cavity 300 to prevent the reaction gas from being introduced into the reaction cavity 300.
In particular, referring to fig. 2, fig. 2 illustrates a schematic diagram of a vaporization detection apparatus provided in accordance with some embodiments of the present invention.
In some embodiments, since droplets are included in the reaction gas obtained by direct vaporization through the vaporizer 100, the reaction gas including the droplets is defined as an intermediate gas for convenience of description, and further, it is necessary to perform a subsequent process. That is, the vaporized reactant may be defined as an intermediate gas.
As shown in fig. 2, the vaporization detection apparatus 200 may include a detection tank 210 having an absorption plate 211 at the top thereof, and the detection tank 210 is filled with a standard gas 220, and the gas-liquid separation of the intermediate gas may be performed by the density of the standard gas 220 to obtain a reaction gas 410. The reaction gas 410 floats up to contact the absorber plate 211 and is absorbed by the absorber plate 211.
Specifically, the density of the standard gas in the detection tank 210 may be greater than the density of the reaction gas 410 in the intermediate gas and less than the density of the reaction liquid 420 in the intermediate gas. As shown in fig. 2, in this way, the reaction gas 410 in the intermediate gas may float up under the environment of the standard gas 220 in the detection tank 210, and the reaction liquid 420 in the intermediate gas may fall down under the environment of the standard gas 220 in the detection tank 210, thereby achieving gas-liquid separation.
For example, alternatively, the intermediate gas used as a reactant for thin film deposition may include water vapor and liquid water. The reaction liquid 420 in the intermediate gas may be liquid water having a density of 1g/cm 3 Correspondingly, the reaction gas 410 in the intermediate gas can be steam with the density of 0.6g/cm 3 . In the closed test chamber 210, the standard gas 220 may be nitrogen gas with a density of 0.9g/cm 3 Left and right. In the closed nitrogen-filled detection tank 210, since the density of nitrogen is greater than that of water vapor and less than that of liquid water, nitrogen can assist in the floating up of less dense water vapor. The vapor in the intermediate gas can float and rise under the environment filled with nitrogen by means of the buoyancy of the nitrogen, and the liquid water in the intermediate gas falls and falls under the environment filled with nitrogen, so that the effect of separating vapor and liquid drops is realized. Further, since the amount of the intermediate gas introduced is small, the gas pressure in the detection chamber 210 is not changed in a short time, and the density separation effect is not affected.
Further, in some preferred embodiments, a heating device (not shown in fig. 2) may be disposed in the detection chamber 210, and the standard gas (such as nitrogen) in the detection chamber 210 is changed into a high-temperature gas by the heating device, so as to form a sealed high-temperature detection environment, thereby avoiding the reaction gas (such as water vapor) from being liquefied by cooling.
It will be appreciated by those skilled in the art that the above-mentioned scheme of the reaction gas 410 being water vapor, the reaction liquid 420 being liquid water, and the standard gas 220 being nitrogen is only one non-limiting embodiment provided by the present invention, and is intended to clearly illustrate the main concept of the present invention and to provide a specific scheme for public implementation, not to limit the scope of the present invention. Those skilled in the art can select different standard gases 220 filling the detection box 210 and the corresponding absorbents of the absorber plate 211 according to different reactants, so the application scope of the present invention is very wide.
In some embodiments, the absorber plate 211 in the detection box 210 may include an absorber, and the absorber in the absorber plate 211 may react with the reaction gas in a chemical absorption manner. For example, in the embodiment where the reaction gas 410 is water vapor, the absorbent in the absorption plate 211 may be an absorbent that can react with water, such as anhydrous calcium chloride or calcium hydroxide.
In the above preferred embodiment, the absorbing plate 211 is disposed at the top of the detection box 210, and the separated reaction gas 410 needs to float up to the top of the detection box 210 to be absorbed by the absorbing plate 211, which is beneficial to further increase the space between the reaction gas 410 and the reaction liquid 420 separated from the intermediate gas, and avoid the absorbing plate 211 from performing a chemical absorption reaction with the reaction liquid 420, so as to affect the accuracy of the subsequent vaporization detection.
In some embodiments of the present invention, the vaporization degree of the reactant may be determined according to the weight change before and after the absorption plate 211 absorbs the reactant gas 410, and the initial weight of the reactant.
Specifically, the initial weight A0 of the absorber plate 211 is determined, and after the absorber plate 211 has absorbed the reaction gas 410 (e.g., water vapor), the weight A1 of the absorber plate 211 is determined again, and the difference A1-A0 between the initial weight A0 of the absorber plate 211 and the current weight A1 is obtained. The weight B1 of the liquid reactant before passing through the vaporizer 100 is obtained, and the vaporization degree of the reactant can be determined according to the ratio of the weight difference A1-A0 to the initial weight B1 of the liquid reactant, wherein the vaporization degree is (A1-A0)/B1, and the vaporization efficiency detection is completed.
Further, as shown in fig. 2, in other preferred embodiments, in order to completely separate the reaction gas 410 and the reaction liquid 420 in the vaporized reactant, the vaporization detection apparatus 200 may further include a front-end separator 230. The front separator 230 may be disposed outside the detection tank 210 and connected to the detection tank 210 through a pipeline. Alternatively, as shown in FIG. 2, a front end separator 230 may also be provided inside the detection tank 210 to reduce the overall space occupation of the vaporization detection apparatus 200.
The front separator 230 may be used to perform primary gas-liquid separation of the initial intermediate gas vaporized by the vaporizer 100, and to introduce the separated gaseous reactants into the detection chamber 210, perform secondary gas-liquid separation in the detection chamber 210 through the standard gas 220 and the absorption plate 211, and then perform vaporization detection.
As shown in FIG. 2, in some alternative embodiments, a centrifuge device (not shown in FIG. 2) may be included in the front-end separator 230. Since the gas flow rates used in semiconductor processing are extremely fast, e.g., 8 to 80m/s, they can be adapted to the requirements of separators including centrifugal devices. The initial intermediate gas vaporized by the vaporizer 100 enters the front separator 230 through the gas inlet 231, and the reaction liquid in the initial intermediate gas flies out in a tangential direction of the rotation direction by the centrifugal force generated when the centrifugal device rotates at a high speed, so that the reaction gas can be separated from the gas flow of the initial intermediate gas (the gas flow direction of the initial intermediate gas is shown as a spiral in fig. 2). The intermediate gas after the primary gas-liquid separation is discharged through the gas outlet 232, and the discharged reaction gas 410 and reaction liquid 420 are subjected to the secondary gas-liquid separation based on the density of the standard gas 220. Since the centrifugal force applied to the reaction liquid 420 is much greater than the gravity and the inertia force, the separation efficiency of the gas-liquid separation by the centrifugal structure is high.
Returning to FIG. 1, after detecting the vaporization rate of the liquid reactant by the vaporization detection device 200, it may be further determined to allow or prevent the reactant from entering the reaction chamber 300.
Specifically, in some embodiments, a gate valve structure may be included in a line that communicates the vaporization detection apparatus 200 and the reaction chamber 300. The vaporization threshold may be preset to correspond to the target vaporization degree, and in response to the detected vaporization degree of the liquid reactant exceeding the vaporization threshold, the vaporization degree of the current reactant reaches the target vaporization degree, meeting the vaporization requirement, where the liquid reactant does not include small droplets, or has a small droplet content, and may be continuously introduced into the reaction chamber 300. If the detected vaporization rate of the liquid reactant is less than the vaporization threshold, the vaporization rate of the reactant does not reach the target vaporization rate, and the vaporization requirement is not satisfied, and more droplets are contained therein, the gate valve may be selectively closed to avoid the reactant entering the reaction chamber 300. Further, alternatively, the non-standard vaporized reactant may be further conveyed to vaporizer 100 via another line to be vaporized again.
Referring next to fig. 3, fig. 3 illustrates a flow chart of a vaporization detection method provided in accordance with some embodiments of the present invention.
As shown in fig. 3, in some embodiments of the present invention, the vaporization detection method may mainly include the steps of:
s310: obtaining intermediate gas formed by vaporized liquid reactant.
Specifically, in some embodiments, the reaction gas including small droplets obtained by direct vaporization by the vaporizer 100 is defined as an intermediate gas in the present invention.
Further, in some preferred embodiments, the initial intermediate gas after vaporization of the vaporizer 100 may be subjected to a primary gas-liquid separation. Specifically, the front end separator 230 in the vaporization detection apparatus 200 may be utilized, which may include a centrifuge apparatus (not shown in FIG. 2). The initial intermediate gas vaporized by the vaporizer 100 enters the front separator 230 through the gas inlet 231, and the reaction liquid in the initial intermediate gas flies out in a tangential direction of the rotation direction by the centrifugal force generated when the centrifugal device rotates at a high speed, so that the reaction gas can be separated from the gas flow of the initial intermediate gas. The intermediate gas after the primary gas-liquid separation is discharged through the gas outlet 232, and the discharged reaction gas 410 and reaction liquid 420 are subjected to the secondary gas-liquid separation based on the density of the standard gas 220. Since the centrifugal force applied to the reaction liquid 420 is much greater than the gravity and the inertia force, the separation efficiency of the gas-liquid separation by the centrifugal structure is high.
Step S320 may be performed next: the intermediate gas is subjected to gas-liquid separation according to the density of the standard gas to obtain a reaction gas.
In some embodiments, the vaporization detection apparatus 200 may include a detection tank 210 having an absorption plate 211 at the top thereof, and the detection tank 210 is filled with a standard gas 220, and the intermediate gas may be gas-liquid separated by the density of the standard gas 220 to obtain a reaction gas 410. The reaction gas 410 floats up to contact the absorber plate 211 and is absorbed by the absorber plate 211.
Specifically, the density of the standard gas in the detection tank 210 may be greater than the density of the reaction gas 410 in the intermediate gas and less than the density of the reaction liquid 420 in the intermediate gas. In this way, the reaction gas 410 in the intermediate gas can float up in the environment of the standard gas 220 in the detection box 210, and the reaction liquid 420 in the intermediate gas can fall down in the environment of the standard gas 220 in the detection box 210, thereby realizing secondary gas-liquid separation.
For example, alternatively, the intermediate gas used as a reactant for thin film deposition may include water vapor and liquid water. That is, the reaction liquid 420 in the intermediate gas may be water having a density of 1g/cm3, and correspondingly, the reaction gas 410 in the intermediate gas may be water vapor having a density of 0.6g/cm 3 . In the closed test chamber 210, the standard gas 220 may be nitrogen gas with a density of 0.9g/cm 3 Left and right. In the closed nitrogen-filled detection tank 210, since the density of nitrogen is greater than that of water vapor and less than that of liquid water, nitrogen can assist in the floating up of less dense water vapor. The vapor in the intermediate gas can float and rise under the environment filled with nitrogen by means of the buoyancy of the nitrogen, and the liquid water in the intermediate gas falls and falls under the environment filled with nitrogen, so that the effect of secondarily separating vapor and liquid drops is achieved.
Step S330 may be performed next: the reaction gas is absorbed by the absorption plate, and the vaporization degree of the reactant is determined according to the weight change before and after absorption by the absorption plate, and the initial weight of the reactant.
Specifically, in some embodiments, an initial weight A0 of the absorber plate 211 is determined, and after the absorber plate 211 has absorbed the reactant gas 410 (e.g., water vapor), the weight A1 of the absorber plate 211 is again determined, and the difference A1-A0 between the initial weight A0 and the current weight A1 of the absorber plate 211 is obtained. The weight B1 of the liquid reactant before passing through the vaporizer 100 is obtained, and the vaporization degree of the reactant can be determined according to the ratio of the weight difference A1-A0 to the initial weight B1 of the liquid reactant, wherein the vaporization degree is (A1-A0)/B1, and the vaporization efficiency detection is completed.
While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated that the methodologies are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and/or concurrently with other acts from that shown and described herein or not shown and described herein, as would be understood and appreciated by those skilled in the art.
Another aspect of the present invention also provides a computer readable storage medium having stored thereon computer instructions operable to implement the above-described vaporization detection method provided by the third aspect of the present invention.
It will be appreciated by those skilled in the art that the above examples of the vaporization detection method are merely some non-limiting embodiments provided by the present invention, and are intended to clearly illustrate the main concept of the present invention and to provide some embodiments for public implementation, not to limit the overall operation or the overall function of the vaporization detection apparatus 200 and the thin film deposition device 10. Similarly, the vaporization detection apparatus 200, and the thin film deposition device 10 are only one non-limiting embodiment provided by the present invention, and do not limit the implementation subjects of the respective steps in these vaporization detection methods.
In summary, the present invention provides a thin film deposition apparatus, a vaporization detection device, a vaporization detection method, and a computer readable storage medium, which can effectively detect the vaporization efficiency of a reaction gas that is about to enter a reaction chamber, and avoid a series of problems such as particle pollution, non-uniformity of a deposited thin film, etc. caused by incomplete vaporization of the reaction gas.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (11)

1. A thin film deposition apparatus, comprising:
a vaporizer for vaporizing a reactant in a liquid state to form a reactant gas;
the reaction cavity is connected with the vaporizer through a pipeline and is used for acquiring the reaction gas from the vaporizer so as to perform film deposition; and
and the vaporization detection device is arranged between the vaporizer and the reaction cavity and is used for detecting the vaporization degree of the reactant so as to allow or prevent the reactant from entering the reaction cavity.
2. The thin film deposition apparatus as claimed in claim 1, wherein the reactant after vaporization comprises an intermediate gas, the vaporization detection means comprises a detection tank having an absorption plate at a top thereof, and the detection tank is filled with a standard gas, and the intermediate gas is subjected to gas-liquid separation by a density of the standard gas to obtain the reactant gas, and the reactant gas floats up to the absorption plate to be absorbed by the absorption plate.
3. The thin film deposition apparatus according to claim 2, wherein a density of the standard gas in the detection chamber is greater than a density of the reactive gas and less than a density of the reactive liquid in the intermediate gas, the reactive gas in the intermediate gas being suspended to rise in an environment of the standard gas, and the reactive liquid in the intermediate gas being dropped to fall in an environment of the standard gas.
4. The thin film deposition apparatus according to claim 3, wherein the standard gas comprises a density of 0.9g/cm 3 The reaction liquid comprising nitrogen having a density of 1g/cm 3 The reaction gas includes water having a density of 0.6g/cm 3 Is a water vapor of (a).
5. The thin film deposition apparatus according to claim 2, wherein the absorber plate includes an absorber therein to chemically react with the reaction gas.
6. The thin film deposition apparatus according to claim 2, further comprising a heating device provided at least in the detection chamber to heat the standard gas.
7. The thin film deposition apparatus according to claim 2, wherein the vaporization detection means includes a front-end separator that performs primary gas-liquid separation of the intermediate gas and passes the separated gaseous reactant into the detection chamber.
8. The thin film deposition apparatus as claimed in claim 7, wherein the front-end separator comprises a centrifugal device, and the reaction gas in the intermediate gas is separated by high-speed rotation of the centrifugal device.
9. A vaporization detection device, comprising:
the detection box is provided with an air inlet, and is used for acquiring intermediate gas formed by the vaporized liquid reactant, and standard gas is filled in the detection box;
the absorption plate is arranged at the top of the detection box, the gas-liquid separation is carried out on the intermediate gas through the density of the standard gas, so that reaction gas is obtained, floats to the absorption plate and is absorbed by the absorption plate, and the vaporization degree of the reactant is determined according to the weight change before and after the absorption of the absorption plate and the initial weight of the reactant.
10. A vaporization detection method, characterized by comprising the steps of:
obtaining intermediate gas formed by vaporized liquid reactants;
according to the density of the standard gas, carrying out gas-liquid separation on the intermediate gas to obtain a reaction gas; and
the reactant gas is absorbed by the absorbing plate, and the vaporization degree of the reactant is determined according to the weight change before and after the absorption by the absorbing plate and the initial weight of the reactant.
11. A computer readable storage medium having stored thereon computer instructions which, when executed by a processor, implement the vaporization detection method of claim 10.
CN202311013077.8A 2023-08-10 2023-08-10 Thin film deposition equipment, vaporization detection device and vaporization detection method Pending CN117059521A (en)

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CN202311013077.8A CN117059521A (en) 2023-08-10 2023-08-10 Thin film deposition equipment, vaporization detection device and vaporization detection method

Applications Claiming Priority (1)

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CN202311013077.8A CN117059521A (en) 2023-08-10 2023-08-10 Thin film deposition equipment, vaporization detection device and vaporization detection method

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CN117059521A true CN117059521A (en) 2023-11-14

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