CN117042480A - Solar cell and manufacturing method thereof - Google Patents
Solar cell and manufacturing method thereof Download PDFInfo
- Publication number
- CN117042480A CN117042480A CN202311141869.3A CN202311141869A CN117042480A CN 117042480 A CN117042480 A CN 117042480A CN 202311141869 A CN202311141869 A CN 202311141869A CN 117042480 A CN117042480 A CN 117042480A
- Authority
- CN
- China
- Prior art keywords
- layer
- transparent conductive
- light
- conductive layer
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 230000005540 biological transmission Effects 0.000 claims abstract description 115
- 230000031700 light absorption Effects 0.000 claims abstract description 54
- 230000000149 penetrating effect Effects 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 43
- 230000008569 process Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 13
- 238000005240 physical vapour deposition Methods 0.000 claims description 9
- 230000009471 action Effects 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 7
- 230000000295 complement effect Effects 0.000 claims description 5
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 238000001579 optical reflectometry Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 562
- 238000006243 chemical reaction Methods 0.000 description 23
- 239000000463 material Substances 0.000 description 17
- 239000000969 carrier Substances 0.000 description 16
- 238000002310 reflectometry Methods 0.000 description 14
- 230000009286 beneficial effect Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 230000006798 recombination Effects 0.000 description 10
- 238000005215 recombination Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000004020 conductor Substances 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 6
- -1 2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl Chemical group 0.000 description 5
- JGFBQFKZKSSODQ-UHFFFAOYSA-N Isothiocyanatocyclopropane Chemical compound S=C=NC1CC1 JGFBQFKZKSSODQ-UHFFFAOYSA-N 0.000 description 4
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- PWLNAUNEAKQYLH-UHFFFAOYSA-N butyric acid octyl ester Natural products CCCCCCCCOC(=O)CCC PWLNAUNEAKQYLH-UHFFFAOYSA-N 0.000 description 4
- 150000001768 cations Chemical group 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- UUIQMZJEGPQKFD-UHFFFAOYSA-N n-butyric acid methyl ester Natural products CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- SNFCXVRWFNAHQX-UHFFFAOYSA-N 9,9'-spirobi[fluorene] Chemical compound C12=CC=CC=C2C2=CC=CC=C2C21C1=CC=CC=C1C1=CC=CC=C21 SNFCXVRWFNAHQX-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 150000001450 anions Chemical group 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- KIMPAVBWSFLENS-UHFFFAOYSA-N 2-carbazol-9-ylethylphosphonic acid Chemical compound C1=CC=CC=2C3=CC=CC=C3N(C1=2)CCP(O)(O)=O KIMPAVBWSFLENS-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JUGMVQZJYQVQJS-UHFFFAOYSA-N [B+3].[O-2].[Zn+2] Chemical compound [B+3].[O-2].[Zn+2] JUGMVQZJYQVQJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solar cell and a manufacturing method thereof, and relates to the technical field of photovoltaics, so as to reduce the light reflectivity of one side of a light facing surface of the solar cell under the condition that the solar cell comprises a transparent conductive layer. The solar cell includes a light absorbing layer, a first carrier transporting layer, a first transparent conductive layer, a second carrier transporting layer, a second transparent conductive layer, a first electrode, and a second electrode. The first carrier transmission layer and the first transparent conductive layer are sequentially arranged on one side of the backlight surface of the light absorption layer. The second carrier transmission layer and the second transparent conductive layer are sequentially arranged on one side of the light facing surface of the light absorption layer. The second carrier transport layer and the first carrier transport layer have opposite conductivity types, and the second transparent conductive layer is provided with a penetrating light transmission pattern. The first electrode is formed on one side of the first transparent conductive layer facing away from the light absorbing layer. The second electrode is formed on one side of the second transparent conductive layer facing away from the light absorbing layer. The second electrode is coupled to portions of the second transparent conductive layer.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a solar cell and a manufacturing method thereof.
Background
Photovoltaic solar cells are devices that directly convert light energy into electrical energy by the photoelectric effect. How to improve the photoelectric conversion efficiency of the solar cell is always a great importance in the design and optimization of the solar cell. In addition, some solar cells (such as perovskite solar cells or organic solar cells) have a transparent conductive layer disposed between a carrier transport layer and a conductive electrode to enhance the lateral transport rate of carriers and reduce the transport barrier between the carrier transport layer and the conductive electrode, which is beneficial to improving the photoelectric conversion efficiency of the solar cell.
However, in the conventional solar cell, the transparent conductive layer is generally disposed entirely between the carrier transmission layer and the conductive electrode, which results in a higher light reflectivity on the light-facing surface side of the solar cell, which is not beneficial to further improving the photoelectric conversion efficiency of the solar cell.
Disclosure of Invention
The invention aims to provide a solar cell and a manufacturing method thereof, which are used for reducing the light reflectivity of the solar cell on the light facing surface side under the condition that the solar cell comprises a transparent conductive layer, so as to be beneficial to improving the photoelectric conversion efficiency of the solar cell.
In order to achieve the above object, the present invention provides a solar cell comprising: the light-absorbing layer, the first carrier transport layer, the first transparent conductive layer, the second carrier transport layer, the second transparent conductive layer, the first electrode and the second electrode.
The first carrier transmission layer and the first transparent conductive layer are sequentially arranged on one side of the backlight surface of the light absorption layer along the thickness direction of the light absorption layer. The second carrier transmission layer and the second transparent conductive layer are sequentially arranged on one side of the light facing surface of the light absorption layer along the thickness direction of the light absorption layer. The second carrier transport layer and the first carrier transport layer have opposite conductivity types, and the second transparent conductive layer is provided with a penetrating light transmission pattern. The first electrode is formed on one side of the first transparent conductive layer facing away from the first carrier transport layer. The second electrode is formed on a side of the second transparent conductive layer facing away from the second carrier transport layer. The second electrode is coupled to portions of the second transparent conductive layer.
Under the condition of adopting the technical scheme, when the solar cell is in a working state, electron and hole pairs generated after photon absorption by the light absorption layer can be separated under the action of the first carrier transmission layer and the second carrier transmission layer and respectively move along the directions close to the first carrier transmission layer and the second carrier transmission layer, then the electron and hole pairs are sequentially collected by the first carrier transmission layer and the second carrier transmission layer and respectively transmitted to the first electrode and the second electrode through the first transparent conductive layer and the second transparent conductive layer, and finally the electron and hole pairs are guided out by the first electrode and the second electrode to form photocurrent. Compared with the first carrier transmission layer and the second carrier transmission layer respectively, the first transparent conductive layer and the second transparent conductive layer have excellent carrier transverse transmission characteristics, so that electrons or holes collected by the corresponding carrier transmission layers can be transmitted to corresponding electrodes in time and transversely; and the first transparent conductive layer and the second transparent conductive layer can respectively reduce the transmission barrier between the first carrier transmission layer and the first electrode, reduce the transmission barrier between the second carrier transmission layer and the second electrode, facilitate the collection of the electrode and holes, reduce the carrier recombination rate, and further facilitate the improvement of the photoelectric conversion efficiency of the solar cell.
And the second transparent conductive layer above the light-facing surface of the light absorption layer is provided with a penetrating light-transmitting pattern, and part of light rays irradiated to one side of the light-facing surface of the solar cell can be directly irradiated to the second carrier transmission layer through the second transparent conductive layer with the light-transmitting pattern under the condition of no damage and refracted into the light absorption layer through the second carrier transmission layer. Based on the above, compared with the whole transparent conductive layer arranged between the second carrier transmission layer and the second electrode, the second transparent conductive layer provided with the light transmission pattern has lower reflectivity for light rays irradiated to the light facing surface side of the solar cell, and is beneficial to enabling more light rays to be refracted to the light absorption layer through the second transparent conductive layer and the second carrier transmission layer. Therefore, the second transparent conducting layer in the solar cell provided by the invention not only can be beneficial to collecting electrons or holes, but also can be beneficial to improving the utilization rate of the solar cell to light rays and increasing the short-circuit current of the solar cell.
As a possible implementation manner, the light-transmitting pattern includes a plurality of light-transmitting portions disposed at intervals, and a width of each light-transmitting portion is greater than 0 and less than a photo-generated carrier diffusion length corresponding to the light-absorbing layer.
Under the condition of adopting the technical scheme, the photo-generated carriers with opposite conductivity types can be compounded in the diffusion process, so that the number of carriers led out by the corresponding electrodes is small. In addition, the transparent pattern of the second transparent conductive layer is a transparent region without transparent conductive material, so the presence of the transparent pattern can reduce the reflectivity of the second transparent conductive layer to the light surface side, but the part cannot collect carriers. Based on this, when the light transmission pattern includes a plurality of light transmission portions that are distributed at intervals, and the width of each light transmission portion is greater than 0 and less than the diffusion length of the photogenerated carriers corresponding to the light absorption layer, not only can a part of light be nondestructively irradiated to the second carrier transmission layer through each light transmission portion, but also the carriers of the corresponding conductivity type generated after each part of the light absorption layer absorbs photons are conducted to the second transparent conductive layer through the second carrier transmission layer and then conducted to the second electrode in time through the solid parts except the light transmission pattern in the second transparent conductive layer, so that the carrier recombination rate of each area of the light absorption layer on one side of the light surface can be effectively reduced, and the photoelectric conversion efficiency of the solar cell is further improved.
As a possible implementation manner, the second transparent conductive layer includes a plurality of transparent conductive portions disposed at intervals. The projection contours of the transparent conductive parts on the second carrier transmission layer are complementary with the projection contours of the light transmission patterns on the second carrier transmission layer. Under the circumstance, the light-transmitting pattern can also extend to the edge part of the second transparent conductive layer, so that the average reflectivity of the middle area and the edge area of the second transparent conductive layer to light is enabled to be approximately the same, the quantity of photons transmitted to the middle area and the edge area of the light absorption layer by the second transparent conductive layer and the second carrier transmission layer is enabled to be approximately the same, and further, the generation of electrons and holes with balanced quantity in each area of the light absorption layer is enabled to be facilitated, the probability of recombination caused by uneven distribution of carriers with opposite conductivity types when the electrons and the holes respectively face the first carrier transmission layer and the second carrier transmission layer is reduced, and the solar cell is enabled to have higher photoelectric conversion efficiency.
As a possible implementation, each transparent conductive portion has a long strip-like structure or an L-like structure. In this case, the morphology of each transparent conductive portion is simpler to reduce the difficulty of manufacturing the second transparent conductive layer. At the same time, the difficulty of coupling the second electrode with each portion of the second transparent conductive layer can also be reduced.
As one possible implementation, the width of the transparent conductive portion is 100nm or more and 1 μm or less.
Under the condition of adopting the technical scheme, the surface area of the light facing surface side of the second carrier transmission layer is a constant value, and the second transparent conductive layer covers the second carrier transmission layer, and the solid part of the second transparent conductive layer with the transparent conductive material is complementary with the light transmission pattern, so that the solid part of the second transparent conductive layer with the transparent conductive material is inversely proportional to the area of the light transmission pattern. Based on this, when the width of the transparent conductive portion is within the above range, it is possible to prevent the second transparent conductive layer from being difficult to timely guide out the carriers collected by each portion of the second carrier transport layer due to the large width of the light transmission pattern caused by the small width of the transparent conductive portion, and to ensure a low carrier recombination rate on the light facing surface side of the light absorbing layer. In addition, the reflectivity of the light-facing surface side of the second light-transmitting conductive layer is prevented from being larger due to the fact that the width of the transparent conductive part is larger, and the solar cell is ensured to have higher light utilization rate.
As a possible implementation, the pitches of two adjacent transparent conductive portions are equal.
Under the condition of adopting the technical scheme, the area between two adjacent transparent conductive parts is the light-transmitting part included by the light-transmitting pattern. Based on the above, when the distances between two adjacent transparent conductive portions are equal, the widths of different transparent portions included in the transparent pattern are equal, so that the average reflectivity of each region of the second transparent conductive layer to light is more favorable to be approximately the same, the photon quantity from the second transparent conductive layer and the second carrier transmission layer to the middle region and the edge region of the light absorption layer is more favorable to be approximately the same, and further, the generation of balanced quantity of electrons and holes in each region of the light absorption layer is favorable to be reduced, and the probability of recombination caused by uneven carrier distribution of two opposite conductivity types when the electrons and the holes move towards the first carrier transmission layer and the second carrier transmission layer is favorable to be higher in photoelectric conversion efficiency of the solar cell.
As a possible implementation manner, a surface of one side of the second transparent conductive layer facing away from the second carrier transport layer is textured, and the second transparent conductive layer includes a plurality of textured structures coupled to each other.
Under the condition of adopting the technical scheme, because the suede has the light trapping effect, so compared with the fact that the surface of one side of the second transparent conducting layer, which deviates from the second carrier transmission layer, is a plane, when the surface of one side of the second transparent conducting layer, which deviates from the second carrier transmission layer, is the suede, the second transparent conducting layer can not only reduce the light reflectivity towards the light surface side through the light transmission pattern of the second transparent conducting layer, but also enable incident light to carry out multiple reflection and refraction on the surface through the suede structure, which deviates from the second carrier transmission layer side, so as to generate the light trapping effect, thereby enabling more light to be incident into the light absorption layer and further reducing the light reflectivity towards the light surface side of the second transparent conducting layer.
As a possible implementation manner, each of the textured structures has a sidewall disposed obliquely with respect to the light-facing surface of the second carrier-transporting layer, and an included angle between the sidewall and the light-facing surface of the second carrier-transporting layer is greater than or equal to 40 ° and less than or equal to 70 °.
Under the condition of adopting the technical scheme, the size of the included angle between the side wall of each suede structure and the light facing surface of the second carrier transmission layer can influence the size of the reflection angle after the light irradiates the suede structure, so that the subsequent reflection times of the light at the suede position are influenced, and finally the reflectivity of the velvet to the light is influenced. Based on this, when the included angle between the side wall of each suede structure and the light facing surface of the second carrier transmission layer is in the above range, the reflectivity of the suede to light can be further reduced, and the photoelectric conversion efficiency of the solar cell can be further improved.
As one possible implementation, the thickness of the second transparent conductive layer is 10nm or more and 100nm or less.
Under the condition of adopting the technical scheme, the thickness of the second transparent conductive layer is in the range, so that the influence on the film forming uniformity of all other areas of the second transparent conductive layer except the areas provided with the light transmission patterns due to the fact that the thickness of the second transparent conductive layer is too small can be prevented, and all other parts of the second transparent conductive layer except the areas provided with the light transmission patterns are ensured to have good conductive performance. In addition, the optical transmittance of the other areas except the light-transmitting pattern of the second transparent conductive layer can be prevented from being influenced by the larger thickness of the second transparent conductive layer, and the lower light reflectivity of the other areas except the light-transmitting pattern of the second transparent conductive layer can be ensured.
As a possible implementation, the solar cell further includes an anti-reflection layer. The anti-reflection layer covers the second carrier transport layer and the second transparent conductive layer. The second electrode penetrates the anti-reflection layer and is coupled with the second transparent conductive layer. In this case, the antireflection layer may isolate the second transparent conductive layer and a part of the second carrier transport layer from the outside, preventing leakage.
As a possible implementation, the solar cell is a perovskite solar cell, an organic solar cell or a copper indium gallium selenide solar cell.
As a possible implementation, in the case where the light absorbing layer is a perovskite light absorbing layer, the first carrier transporting layer is a hole transporting layer and the second carrier transporting layer is an electron transporting layer. In this case, the electron transport layer, the light absorption layer, and the hole transport layer are formed in the direction from the light-facing surface to the backlight surface of the solar cell. At this time, the perovskite solar cell has a trans-structure, so as to reduce the influence of parasitic absorption of light in the hole transport layer made of materials such as 2,2', 7' -tetra (N, N-di-p-methoxyphenylamine)) 9,9' -spirobifluorene on the number of photons transmitted into the light absorption layer, and ensure that the solar cell has higher photoelectric conversion efficiency.
As a possible implementation, the solar cell is a stacked solar cell. The stacked solar cell includes a bottom cell and a top cell connected together in series. The top cell comprises a second transparent conductive layer, a second carrier transmission layer, a light absorption layer, a first carrier transmission layer and a first transparent conductive layer. The first electrode is positioned on one side of the second transparent conducting layer, which faces away from the second carrier transport layer. The second electrode is located on a side of the bottom cell facing away from the top cell.
In a second aspect, the present invention also provides a method for manufacturing a solar cell, the method comprising: first, a substrate is provided. Next, a first transparent conductive layer, a first carrier transport layer, a light absorbing layer, and a second carrier transport layer are sequentially formed on the substrate. The first carrier transmission layer and the first transparent conductive layer are positioned on the backlight surface side of the light absorption layer, and the second carrier transmission layer and the light facing surface side of the light absorption layer. The second carrier transport layer and the first carrier transport layer are of opposite conductivity types. Next, a second transparent conductive layer is formed on a side of the second carrier transport layer facing away from the light absorbing layer. The second transparent conductive layer is provided with a penetrating light-transmitting pattern. Next, a first electrode is formed on a side of the first transparent conductive layer facing away from the first carrier transport layer. And forming a second electrode on one side of the second transparent conductive layer, which faces away from the second carrier transport layer. The second electrode is coupled to portions of the second transparent conductive layer.
As a possible implementation manner, the forming a second transparent conductive layer on a side of the second carrier transport layer facing away from the light absorbing layer includes: and a mask plate is arranged on one side of the second carrier transmission layer, which is away from the light absorption layer. And forming a second transparent conductive layer on one side of the second carrier transmission layer, which is away from the light absorption layer, by adopting a physical vapor deposition process or a chemical vapor deposition process under the mask action of the mask. In this case, the second transparent conductive layer may be manufactured through various processes, so as to improve applicability of the manufacturing method provided by the embodiment of the present invention in different application scenarios.
As a possible implementation manner, the mask plate includes at least two mask sub-plates sequentially arranged along the thickness direction of the light absorbing layer, and the mask patterns of different mask sub-plates are the same. Under the above circumstances, under the mask action of the mask, a physical vapor deposition process or a chemical vapor deposition process is adopted to form a second transparent conductive layer on a side of the second carrier transmission layer facing away from the light absorption layer, including: and in the process of depositing the second transparent conductive layer, fixing at least two mask sub-plates positioned at the top or at the bottom, and moving the rest mask sub-plates.
Under the condition of adopting the technical scheme, in the process of depositing the second transparent conductive layer, the mask patterns of different mask sub-plates included by the mask plate are longitudinally overlapped, and at the moment, the cross section area of one side of the second transparent conductive layer close to the second carrier transmission layer is the largest. Along with the lapse of deposition time, the mask version that is located at the top or is located at the bottom of two at least mask versions is fixed to remove remaining mask versions, and the combined mask pattern that forms by different mask versions jointly is reduced than the area of mask pattern that single mask version had this moment, thereby makes the cross-sectional area of second transparent conducting layer along thickness direction reduce gradually, and then makes the specific surface area of the side surface that the second transparent conducting layer deviates from the second carrier transport layer bigger, improves the light trapping effect of the side that the second transparent conducting layer deviates from the second carrier transport layer.
As a possible implementation manner, after the second transparent conductive layer is formed on the side, away from the light absorbing layer, of the second carrier transmission layer, before the second electrode is formed on the side, away from the second carrier transmission layer, of the second transparent conductive layer, the method for manufacturing a solar cell further includes: an anti-reflection layer is formed overlying the second carrier transport layer and the second transparent conductive layer.
The advantages of the second aspect and various implementations of the present invention may be referred to for analysis of the advantages of the first aspect and various implementations of the first aspect, and will not be described here again.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
fig. 1 is a schematic view of a part of a structure of a solar cell according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a solar cell according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a solar cell according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a solar cell according to an embodiment of the present invention;
FIG. 5 is a schematic top view of a second transparent conductive layer according to an embodiment of the present invention;
FIG. 6 is a schematic top view of a second transparent conductive layer according to an embodiment of the present invention;
fig. 7 is a schematic longitudinal sectional view of a part of a solar cell according to an embodiment of the present invention;
fig. 8 is a schematic longitudinal sectional view of a part of a solar cell according to an embodiment of the present invention;
Fig. 9 is a schematic structural diagram of a mask plate when a second transparent conductive layer included in a solar cell is manufactured according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of a structure of a second transparent conductive layer in a manufacturing process according to an embodiment of the invention;
FIG. 11 is a schematic diagram illustrating a movement pattern of the first mask sub-plate, the second mask sub-plate, and the third mask sub-plate when the second transparent conductive layer is manufactured in the embodiment of the present invention;
FIG. 12 is a schematic diagram showing a second transparent conductive layer in the manufacturing process according to the embodiment of the invention;
fig. 13 is a schematic diagram of a third structure of the second transparent conductive layer in the manufacturing process according to the embodiment of the invention.
Reference numerals: 11 is a light absorbing layer, 12 is a first carrier transport layer, 13 is a first transparent conductive layer, 14 is a second carrier transport layer, 15 is a second transparent conductive layer, 16 is a light transmission pattern, 17 is a light transmission portion, 18 is a transparent conductive portion, 19 is a first electrode, 20 is a second electrode, 21 is an anti-reflection layer, 22 is a bottom cell, 23 is a mask, 24 is a mask, 25 is a first mask, 26 is a second mask, and 27 is a third mask.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
Various structural schematic diagrams according to embodiments of the present disclosure are shown in the drawings. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and relative sizes, positional relationships between them shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. In addition, if one layer/element is located "on" another layer/element in one orientation, that layer/element may be located "under" the other layer/element when the orientation is turned. In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise. The meaning of "a number" is one or more than one unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Photovoltaic solar cells are devices that directly convert light energy into electrical energy by the photoelectric effect. How to improve the photoelectric conversion efficiency of the solar cell is always a great importance in the design and optimization of the solar cell. In addition, some solar cells (such as perovskite solar cells or organic solar cells) have a transparent conductive layer disposed between a carrier transport layer and a conductive electrode to enhance the lateral transport rate of carriers and reduce the transport barrier between the carrier transport layer and the conductive electrode, which is beneficial to improving the photoelectric conversion efficiency of the solar cell.
However, in the conventional solar cell, the transparent conductive layer is generally disposed entirely between the carrier transmission layer and the conductive electrode, which results in a higher light reflectivity on the light-facing surface side of the solar cell, which is not beneficial to further improving the photoelectric conversion efficiency of the solar cell.
Specifically, the photoelectric conversion efficiency of the solar cell depends on the film formation quality of different components included in the solar cell, and is also related to optical management of the light incident surface film layer. Wherein, optical management can optimize the reflection curve of the multilayer film by matching the optical refractive index and thickness of different film layers; and the Fresnel reflection and the projection equation are combined, so that the optical transmittance of the light incident surface can be further increased, and the method becomes a main method for improving the device performance of the solar cell. And poor light management affects the utilization of incident photons and the extraction of emitted photons, thereby reducing the conversion efficiency of the optoelectronic device. Under the above circumstances, in the actual manufacturing process of the solar cell, a physical vapor deposition manner is generally adopted to form a whole transparent conductive layer disposed between the carrier transmission layer and the conductive electrode, and parameters such as deposition temperature, pressure, doping proportion, material purity and the like of the physical vapor deposition are adjusted to control the film performance of the transparent conductive layer, so as to optimize the optical transmittance of the transparent conductive layer. However, the optical properties of different layers have large differences, resulting in high reflection losses due to refractive index differences and parasitic absorption by itself, although researchers have tried to prepare films of many different photoelectric properties and optimize their film thickness and optical suitability between different layers. However, the properties of the film layer prepared in this way are still greatly limited by parasitic absorption per se, so that the light received by the light absorption layer included in the final solar cell is still low. Meanwhile, for a normally prepared smooth surface, a large part of incident light is reflected, the reflected light intensity is strongly dependent on the refractive index difference of two media through the calculation of the formula R= [ (n 1-n 2)/(n 1+ n 2) ], and the optical matching property between the transparent conductive layer and the film layer positioned under the transparent conductive layer is poor, so that the reflection loss of the part is difficult to eliminate, and the further improvement of the photoelectric conversion efficiency of the solar cell is greatly limited.
In order to solve the technical problems described above, in a first aspect, an embodiment of the present invention provides a solar cell. In terms of materials, the solar cell provided by the embodiment of the invention can be any solar cell such as a silicon solar cell (such as a silicon heterojunction cell), a perovskite solar cell, an organic solar cell or a copper indium gallium selenide solar cell.
In terms of structure, as shown in fig. 1 and fig. 2, the solar cell provided in the embodiment of the invention may be a single-layer solar cell; alternatively, as shown in fig. 3, the solar cell provided in the embodiment of the present invention may be a stacked solar cell. At this time, the solar cell provided in the embodiment of the present invention may include at least two subcells stacked and disposed, and the embodiment of the present invention does not specifically limit the device type of each subcell.
Specifically, as shown in fig. 1 and 2, the solar cell provided in the embodiment of the invention includes: a light absorbing layer 11, a first carrier transporting layer 12, a first transparent conductive layer 13, a second carrier transporting layer 14, a second transparent conductive layer 15, a first electrode 19, and a second electrode 20. The first carrier transport layer 12 and the first transparent conductive layer 13 are sequentially disposed on the backlight surface side of the light absorbing layer 11 in the thickness direction of the light absorbing layer 11. The second carrier transport layer 14 and the second transparent conductive layer 15 are sequentially disposed on the light facing surface side of the light absorbing layer 11 in the thickness direction of the light absorbing layer 11. The second carrier transport layer 14 and the first carrier transport layer 12 are opposite in conductivity type, and the second transparent conductive layer 15 is provided with a light-transmitting pattern 16 therethrough. The first electrode 19 is formed on a side of the first transparent conductive layer 13 facing away from the first carrier transport layer 12. The second electrode 20 is formed on a side of the second transparent conductive layer 15 facing away from the second carrier transport layer 14. The second electrode 20 is coupled with portions of the second transparent conductive layer 15.
With the above technical solution, as shown in fig. 1 and fig. 2, when the solar cell is in an operating state, electron and hole pairs generated after the light absorbing layer 11 absorbs photons can be separated under the action of the first carrier transporting layer 12 and the second carrier transporting layer 14, and respectively move along a direction close to the first carrier transporting layer 12 and the second carrier transporting layer 14, and then are collected by the first carrier transporting layer 12 and the second carrier transporting layer 14 in sequence, and respectively conducted to the first electrode 19 and the second electrode 20 through the first transparent conductive layer 13 and the second transparent conductive layer 15, and finally led out by the first electrode 19 and the second electrode 20 to form photocurrents. Compared with the first carrier transport layer 12 and the second carrier transport layer 14, the first transparent conductive layer 13 and the second transparent conductive layer 15 have excellent carrier transverse transport characteristics, so that electrons or holes collected by the corresponding carrier transport layers can be timely and transversely transported to the corresponding electrodes; in addition, the first transparent conductive layer 13 and the second transparent conductive layer 15 can respectively reduce the transmission barrier between the first carrier transmission layer 12 and the first electrode 19, reduce the transmission barrier between the second carrier transmission layer 14 and the second electrode 20, facilitate the collection of the electrode and the hole, reduce the carrier recombination rate, and further facilitate the improvement of the photoelectric conversion efficiency of the solar cell. Next, the second transparent conductive layer 15 located above the light-facing surface of the light absorbing layer 11 is provided with a penetrating light-transmitting pattern 16, and at this time, a part of the light irradiated to the light-facing surface side of the solar cell may directly irradiate to the second carrier transporting layer 14 through the second transparent conductive layer 15 with the light-transmitting pattern 16 without damage, and be refracted into the light absorbing layer 11 through the second carrier transporting layer 14. Based on this, the second transparent conductive layer 15 provided with the light-transmitting pattern 16 has lower reflectivity for light irradiated to the light-facing surface side of the solar cell than the transparent conductive layer entirely provided between the second carrier transport layer 14 and the second electrode 20, facilitating more light to be refracted to the light absorbing layer 11 through the second transparent conductive layer 15 and the second carrier transport layer 14. Therefore, the second transparent conductive layer 15 in the solar cell provided by the embodiment of the invention not only can be beneficial to collecting electrons or holes, but also can be beneficial to improving the utilization rate of the solar cell to light rays and increasing the short-circuit current of the solar cell.
In the practical application process, the materials and thicknesses of the light absorbing layer, the first carrier transporting layer and the second carrier transporting layer may be determined according to the device type of the solar cell and the practical application scenario, which are not specifically limited herein. In addition, the conductivity types of the first carrier transport layer and the second carrier transport layer in the embodiment of the present invention are not particularly limited, and the embodiment of the present invention can be applied to the solar cell provided in the embodiment of the present invention. Specifically, the first carrier transport layer may be an electron transport layer, and the second carrier transport layer is a hole transport layer. Alternatively, the first carrier transport layer may be a hole transport layer, and the second carrier transport layer is an electron transport layer.
For example: when the solar cell provided by the embodiment of the invention is a perovskite solar cell, the molecular general formula of the material of the light absorption layer is ABX 3 . Wherein A, B is a cation of different sizes and X is an anion bonded to both. And the cation B and the anion X coordinate to form a regular octahedral symmetry structure, the cation A is positioned at the center of eight regular octahedrons, and the cation B is positioned at the center of the regular octahedrons. Specifically, the perovskite absorbing layer may contain an inorganic perovskite material, an organic perovskite material, or an organic-inorganic hybrid perovskite material. For example: the perovskite absorption layer may contain CsPbI as material 2 Br、MAPbBr 3 、FAPbI 3 Or Cs 1-y-z FA y MA z PbI 3-x Br x (wherein FA is methyl ether, MA is methylamine, x is 0.ltoreq.3, y is 0.ltoreq.1, z is 0.ltoreq.1, and y+z is 0.ltoreq.1).
One of the first and second carrier transport layers may be a material comprising [6,6 ]]Phenyl C60 methyl butyrate (abbreviated as PC 60 BM)、[6,6]Phenyl C70 methyl butyrate (abbreviated as PC 70 BM)、[6,6]Phenyl C80 methyl butyrate (abbreviated as PC 80 BM) and [6,6]Phenyl C82 methyl butyrate (abbreviated as PC 82 BM), the other may be a material comprising (2- (9H-carbazol-9-yl) ethyl) phosphonic acid) (abbreviated as 2 PACz), (4- (9H-carbazol-9-yl) ethyl) phosphonic acid) (abbreviated as 4 PACz), (2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl)]Phosphonic acid (abbreviated as MeO-2 PACz), [4- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl ]]Phosphonic acid (abbreviated as MeO-4 PACz), [2- (3, 6-dimethyl-9H-carbazol-9-yl) ethyl ]]Phosphonic acid (abbreviated as Me-2 PACz), [4- (3, 6-dimethyl-9H-carbazol-9-yl) ethyl ]]Phosphonic acids (abbreviated as Me-4 PACz) and [4- (3, 6-dibromo-9H-carbazol-9-yl) butyl ]](abbreviated as 2Br-4 PACz).
In the case where the light absorbing layer in the solar cell provided by the embodiment of the invention is a perovskite light absorbing layer, the first carrier transporting layer may be an electron transporting layer, and the second carrier transporting layer is a hole transporting layer. Alternatively, the first carrier transport layer may be a hole transport layer, and the second carrier transport layer is an electron transport layer. In this case, as shown in fig. 1 and 2, the electron transport layer, the light absorption layer 11, and the hole transport layer are sequentially stacked in the direction from the light facing surface to the backlight surface of the solar cell. At this time, the perovskite solar cell has a trans-structure, so that the hole transport layer made of materials such as 2,2', 7' -tetra (N, N-di-p-methoxyphenylamine)) 9,9' -spirobifluorene is reduced, and the parasitic absorption of light is high, which affects the number of photons transmitted into the light absorption layer 11, so that the solar cell is ensured to have high photoelectric conversion efficiency.
As for the first transparent conductive layer and the second transparent conductive layer described above, the materials of the first transparent conductive layer and the second transparent conductive layer may include any one or a combination of at least two of indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, indium tungsten oxide, aluminum zinc oxide, or boron zinc oxide.
In terms of structure, as shown in fig. 1 and 2, the light-transmitting pattern 16 of the second transparent conductive layer 15 may include a plurality of light-transmitting portions 17 disposed at intervals. The size of each light-transmitting portion 17 may be set according to actual requirements as long as it can penetrate the second transparent conductive layer 15.
Illustratively, the width of each light-transmitting portion may be greater than 0 and less than the photogenerated carrier diffusion length corresponding to the light absorbing layer. For example: when the light absorbing layer is a perovskite light absorbing layer, the width of each light transmitting portion is greater than 0 and equal to or less than 110 μm. The width of each light transmitting portion may be 10 μm, 30 μm, 60 μm, 90 μm, 100 μm, 110 μm, or the like, as when the light absorbing layer is a perovskite light absorbing layer. In this case, photo-generated carriers of opposite conductivity type are recombined during diffusion, resulting in a smaller number of carriers being extracted from the respective electrodes. In addition, the transparent pattern of the second transparent conductive layer is a transparent region without transparent conductive material, so the presence of the transparent pattern can reduce the reflectivity of the second transparent conductive layer to the light surface side, but the part cannot collect carriers. Based on this, when the light transmission pattern includes a plurality of light transmission portions that are distributed at intervals, and the width of each light transmission portion is greater than 0 and less than the diffusion length of the photogenerated carriers corresponding to the light absorption layer, not only can a part of light be nondestructively irradiated to the second carrier transmission layer through each light transmission portion, but also the carriers of the corresponding conductivity type generated after each part of the light absorption layer absorbs photons are conducted to the second transparent conductive layer through the second carrier transmission layer and then conducted to the second electrode in time through the solid parts except the light transmission pattern in the second transparent conductive layer, so that the carrier recombination rate of each area of the light absorption layer on one side of the light surface can be effectively reduced, and the photoelectric conversion efficiency of the solar cell is further improved.
Specifically, the light-transmitting portion included in the light-transmitting pattern may be a hollowed-out pattern disposed in the second transparent conductive layer, where the light-transmitting portion does not extend to an edge of the second transparent conductive layer, and each portion of the second transparent conductive layer is coupled. Alternatively, as shown in fig. 1, the second transparent conductive layer 15 includes a plurality of transparent conductive portions 18 arranged at intervals. The projection profile of the plurality of transparent conductive portions 18 on the second carrier transport layer 14 is complementary to the projection profile of the light transmissive pattern 16 on the second carrier transport layer 14. At this time, each light-transmitting portion 17 included in the light-transmitting pattern 16 is a light-transmitting portion of the solid portion of the second transparent conductive layer 15 with respect to the second carrier transport layer 14. In this case, the light-transmitting pattern 16 can also extend to the edge portion of the second transparent conductive layer 15, which is favorable for making the average reflectivity of the middle region and the edge region of the second transparent conductive layer 15 to light be approximately the same, and further for making the number of photons transmitted to the middle region and the edge region of the light-absorbing layer 11 by the second transparent conductive layer 15 and the second carrier-transporting layer 14 approximately the same, and further for making the light-absorbing layer 11 generate a balanced number of electrons and holes in each region, so as to reduce the probability of recombination caused by uneven carrier distribution of the two opposite types of conductivity types when the electrons and the holes move towards the first carrier-transporting layer 12 and the second carrier-transporting layer 14, respectively, and to make the solar cell have a higher photoelectric conversion efficiency.
Wherein, as shown in fig. 5, the shapes of the different transparent conductive portions 18 included in the second transparent conductive layer 15 may be the same. Alternatively, the morphology of the different transparent conductive layers comprised by the second transparent conductive layer may also be different. The shapes of the transparent conductive parts are different from each other in size, but the shapes of the transparent conductive parts are the same; for example, the cross-sectional shapes of the different transparent conductive portions are rectangular, but the widths and/or lengths of the different transparent conductive portions are different. The width and/or length of the different transparent conductive parts can be the same, but the shapes are different; for example, the cross section of one transparent conductive part is rectangular, and the cross section of the other transparent conductive part is wavy, but the width and/or length of the two transparent conductive parts are different. The size and shape of the different transparent conductive portions may also be different.
In addition, the second transparent conductive layer may have an equal or unequal pitch between two adjacent transparent conductive portions. As can be appreciated, as shown in fig. 3 and 4, the region between adjacent two transparent conductive portions 18 is a light transmitting portion 17 included in the light transmitting pattern 16. Based on this, when the pitches of the two adjacent transparent conductive portions 18 are equal, the widths of the different transparent portions 17 included in the transparent pattern 16 are equal, which is more favorable for making the average reflectivity of each region of the second transparent conductive layer 15 to light be approximately the same, and further, for making the number of photons transmitted to the middle region and the edge region of the light absorbing layer 11 by the second transparent conductive layer 15 and the second carrier transmitting layer 14 be approximately the same, and further, for making the light absorbing layer 11 generate an equal number of electrons and holes in each region, so as to reduce the probability of recombination caused by uneven carrier distribution of two opposite types of conductivity types when the electrons and the holes move towards the first carrier transmitting layer 12 and the second carrier transmitting layer 14, and to make the solar cell have higher photoelectric conversion efficiency.
Specifically, the specific morphology of each transparent conductive layer portion included in the second transparent conductive layer and the specific spacing between two adjacent transparent conductive portions may be determined according to an actual application scenario, which is not specifically limited herein.
As illustrated in fig. 5 and 6, each of the transparent conductive portions 18 may have a long strip-like structure or an L-like structure, for example. In this case, the morphology of each transparent conductive portion 18 is simpler to reduce the difficulty of manufacturing the second transparent conductive layer 15. At the same time, the difficulty of coupling the second electrode 20 to the portions of the second transparent conductive layer 15 can also be reduced.
For example, the width of the transparent conductive portion may be 100nm or more and 1 μm or less. For example: the width of the transparent conductive portion may be 100nm, 300nm, 600nm, 900nm, 1 μm, or the like. In this case, since the surface area of the second carrier transport layer on the light-facing surface side is constant and the second transparent conductive layer covers the second carrier transport layer, the solid portion of the second transparent conductive layer having the transparent conductive material is complementary to the light-transmitting pattern, and thus the solid portion of the second transparent conductive layer having the transparent conductive material is inversely proportional to the area of the light-transmitting pattern. Based on this, when the width of the transparent conductive portion is within the above range, it is possible to prevent the second transparent conductive layer from being difficult to timely guide out the carriers collected by each portion of the second carrier transport layer due to the large width of the light transmission pattern caused by the small width of the transparent conductive portion, and to ensure a low carrier recombination rate on the light facing surface side of the light absorbing layer. In addition, the reflectivity of the light-facing surface side of the second light-transmitting conductive layer is prevented from being larger due to the fact that the width of the transparent conductive part is larger, and the solar cell is ensured to have higher light utilization rate.
In practical applications, as shown in fig. 1 to 4, a surface of the second transparent conductive layer 15 facing away from the second carrier transport layer 14 may be planar. Alternatively, as shown in fig. 7 and 8, a surface of the second transparent conductive layer 15 facing away from the second carrier transporting layer 14 may be textured, where the second transparent conductive layer 15 includes a plurality of textured structures coupled to each other. In this case, because the suede has the light trapping effect, when the surface of the second transparent conductive layer 15 facing away from the second carrier transmission layer 14 is the suede compared with the surface of the second transparent conductive layer 15 facing away from the second carrier transmission layer 14, the second transparent conductive layer 15 not only can reduce the light reflectivity of the light facing surface side through the light transmission pattern 16 of the second transparent conductive layer 15, but also can make incident light reflect and refract on the surface for multiple times through the suede structure facing away from the second carrier transmission layer 14 side, thereby generating the light trapping effect, so that more light can be incident into the light absorption layer 11, and further reducing the light reflectivity of the second transparent conductive layer 15 facing the light facing surface side.
Specifically, when the surface of the side of the second transparent conductive layer facing away from the second carrier transport layer is textured, the morphology of each textured structure included in the second transparent conductive layer may be determined according to an actual manufacturing process, which is not specifically limited herein. For example: each pile structure may be a triangular prism structure. Alternatively, as shown in fig. 8, each pile structure may be a pyramid-shaped structure.
Next, as shown in fig. 7 and 8, each of the textured structures has a sidewall disposed obliquely with respect to the light-facing surface of the second carrier-transport layer 14. Wherein, as shown in fig. 8, each surface of the textured structure facing away from the second carrier transport layer 14 may be disposed obliquely with respect to the light-facing surface of the second carrier transport layer 14; alternatively, as shown in fig. 7, it is also possible that, of all the surfaces of the textured structure facing away from the second carrier transport layer 14, part of the surfaces are disposed perpendicularly to the light-facing surface of the second carrier transport layer 14, and the remaining surfaces are disposed obliquely to the light-facing surface of the second carrier transport layer 14. Specifically, each of the pile structures has a sidewall disposed obliquely with respect to the light-facing surface of the second carrier-transporting layer 14, and the size of the included angle between the sidewall and the light-facing surface of the second carrier-transporting layer 14 affects the light trapping effect of the pile, so that the size of the included angle can be determined according to the light trapping requirement of the pile in the actual application scenario and the actual manufacturing process of the second transparent conductive layer 15, which is not limited herein.
Illustratively, each of the textured structures has a sidewall disposed obliquely with respect to the light-directing surface of the second carrier-transporting layer, and the sidewall forms an angle with the light-directing surface of the second carrier-transporting layer of 40 ° or more and 70 ° or less. For example: the included angle between the side wall and the light facing surface of the second carrier transport layer may be 40 °, 45 °, 50 °, 55 °, 60 °, 65 °, 70 °, or the like. Under the circumstance, the size of the included angle between the side wall of each suede structure and the light facing surface of the second carrier transmission layer can influence the size of the reflection angle after the light irradiates the suede structure, so that the subsequent reflection times of the light at the suede surface are influenced, and finally the reflectivity of the suede surface to the light is influenced. Based on this, when the included angle between the side wall of each suede structure and the light facing surface of the second carrier transmission layer is in the above range, the reflectivity of the suede to light can be further reduced, and the photoelectric conversion efficiency of the solar cell can be further improved.
As for the structure of the first transparent conductive layer described above, as shown in fig. 1 and 2, the first transparent conductive layer 13 may be entirely disposed on the side of the first carrier transport layer 12 facing away from the light absorbing layer. Alternatively, the first transparent conductive layer and the second transparent conductive layer are the same, and a light-transmitting pattern is also provided. At this time, part of light irradiated to the backlight surface side of the solar cell can pass through the first transparent conductive layer through the light transmission pattern of the first transparent conductive layer without damage, so that the light reflectivity of the backlight surface side of the solar cell is reduced, and the photoelectric conversion efficiency of the solar cell is further improved.
Specifically, when the first transparent conductive layer is provided with the penetrating light-transmitting pattern, the structure of the first transparent conductive layer and the appearance of the light-transmitting pattern provided on the first transparent conductive layer can refer to the structure of the second transparent conductive layer and the appearance of the light-transmitting pattern provided on the second transparent conductive layer, which are not described herein again.
In terms of thickness, the thickness of the first transparent conductive layer and the second transparent conductive layer in the embodiment of the present invention is not particularly limited.
For example, the thickness of the first transparent conductive layer may be 10nm or more and 100nm or less. For example: the thickness of the first transparent conductive layer may be 10nm, 30nm, 60nm, 90nm, 100nm, or the like. In this case, the thickness of the first transparent conductive layer is within the above range, and it is possible to prevent the film formation uniformity of each region of the first transparent conductive layer from being affected by the thickness of the first transparent conductive layer being too small, ensuring good conductive performance of each portion of the first transparent conductive layer.
The thickness of the second transparent conductive layer may be 10nm or more and 100nm or less. For example: the thickness of the second transparent conductive layer may be 10nm, 30nm, 60nm, 90nm, 100nm, or the like. In this case, the thickness of the second transparent conductive layer is within the above range, and it is possible to prevent the film formation uniformity of the remaining regions of the second transparent conductive layer except for the light transmission pattern from being affected by the thickness of the second transparent conductive layer being too small, ensuring good conductive performance of the remaining regions of the second transparent conductive layer except for the light transmission pattern. In addition, the optical transmittance of the other areas except the light-transmitting pattern of the second transparent conductive layer can be prevented from being influenced by the larger thickness of the second transparent conductive layer, and the lower light reflectivity of the other areas except the light-transmitting pattern of the second transparent conductive layer can be ensured.
For the first electrode and the second electrode, the materials of the first electrode and the second electrode may be conductive materials such as silver, aluminum, copper, nickel, or titanium. The shapes of the first electrode and the second electrode can be determined according to actual application scenes, so long as carriers collected by each part of the first transparent conductive layer and the second transparent conductive layer can be respectively led out.
As a possible implementation, the solar cell described above may further comprise an anti-reflection layer 21, as shown in fig. 3 and 4. The antireflection layer 21 is covered on the second carrier transport layer 14 and the second transparent conductive layer 15. The second electrode 20 penetrates the anti-reflection layer 21 and is coupled with the second transparent conductive layer 15. In this case, the antireflection layer 21 may isolate the second transparent conductive layer 15 and a part of the second carrier transport layer 14 from the outside, preventing electric leakage.
Specifically, the material of the anti-reflection layer may be at least one of an insulating material having anti-reflection function, such as silicon oxide, silicon nitride, and aluminum oxide. In addition, the thickness of the antireflection layer is not particularly limited in the embodiment of the present invention, so long as the embodiment of the present invention can be applied to the solar cell provided in the embodiment of the present invention.
In addition, as described above, the solar cell provided in the embodiment of the invention may be a stacked solar cell. As shown in fig. 3, the stacked solar cell may include a bottom cell 22 and a top cell connected in series. The top cell includes, among other things, a second transparent conductive layer 15, a second carrier transport layer 14, a light absorbing layer 11, a first carrier transport layer 12, and a first transparent conductive layer 13. The first electrode 19 is located on a side of the second transparent conductive layer 15 facing away from the second carrier transport layer 14. The second electrode 20 is located on the side of the bottom cell 22 facing away from the top cell.
The device types of the bottom battery and the top battery may be determined according to actual application scenarios, and are not specifically limited herein. For example: the bottom cell may be a silicon heterojunction solar cell and the top cell may be a perovskite solar cell.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing a solar cell, where the method includes: first, a substrate is provided. Next, a first transparent conductive layer, a first carrier transport layer, a light absorbing layer, and a second carrier transport layer are sequentially formed on the substrate. The first carrier transmission layer and the first transparent conductive layer are positioned on the backlight surface side of the light absorption layer, and the second carrier transmission layer and the light facing surface side of the light absorption layer. The second carrier transport layer and the first carrier transport layer are of opposite conductivity types. Next, a second transparent conductive layer is formed on a side of the second carrier transport layer facing away from the light absorbing layer. The second transparent conductive layer is provided with a penetrating light-transmitting pattern. Next, a first electrode is formed on a side of the first transparent conductive layer facing away from the first carrier transport layer. And forming a second electrode on one side of the second transparent conductive layer, which faces away from the second carrier transport layer. The second electrode is coupled to portions of the second transparent conductive layer.
In an actual manufacturing process, the substrate may be a transparent conductive substrate on which other structures are not formed. For example: the substrate may be a tin oxide transparent conductive glass substrate. Alternatively, the substrate may be a substrate having some film layers formed thereon. In this case, the specific structure of the substrate on which some film layers are formed may be set according to the actual application scenario, as long as it can be applied to the method for manufacturing a solar cell provided in the embodiment of the present invention. For example: in the case where the solar cell to be manufactured is a stacked solar cell, the above-described substrate on which some of the film layers are formed may be a bottom cell as described above.
In addition, the manufacturing processes adopted when the first transparent conductive layer, the first carrier transport layer, the light absorbing layer, and the second carrier transport layer are manufactured respectively may be determined according to the materials of the first transparent conductive layer, the first carrier transport layer, the light absorbing layer, and the second carrier transport layer, and the actual application scenario.
For example: in the case where the fabricated solar cell is a perovskite solar cell, the first transparent conductive layer may be formed on the substrate using a physical vapor deposition process or the like. Next, a first carrier transport layer, a light absorbing layer, and a second carrier transport layer, which are stacked, may be sequentially formed on the first transparent conductive layer using a spin coating process or the like.
In the actual manufacturing process, after the second carrier transport layer is formed, the specific forming process of the second transparent conductive layer may be determined according to the surface morphology of the second transparent conductive layer facing away from the second carrier transport layer.
For example, the forming the second transparent conductive layer on the side of the second carrier transport layer facing away from the light absorbing layer may include the steps of: as shown in fig. 9 to 13, a mask 23 is provided on the side of the second carrier transport layer 14 facing away from the light absorbing layer 11. Next, under the masking action of the mask plate 23, a physical vapor deposition process or a chemical vapor deposition process is adopted to form a second transparent conductive layer 15 on the side of the second carrier transmission layer 14 facing away from the light absorption layer 11. In this case, the second transparent conductive layer 15 may be manufactured through various processes to improve applicability of the manufacturing method provided in the embodiment of the present invention in different application scenarios.
Specifically, a mask is formed on one side of the second carrier transmission layer, which is away from the light absorption layer, by adopting technologies such as photolithography; alternatively, a mask may be disposed above a side of the second carrier transport layer facing away from the light absorbing layer.
When the surface of one side of the second transparent conductive layer, which is away from the second carrier transmission layer, is conformal with the light-facing surface of the second carrier transmission layer, the second transparent conductive layer can be formed by deposition under the mask action of only one mask.
When the surface of the second transparent conductive layer facing away from the second carrier transport layer is a textured surface that is not conformal to the light-facing surface of the second carrier transport layer, as shown in fig. 9 and 10, the mask plate 23 may include at least two mask sub-plates 24 sequentially disposed along the thickness direction of the light absorption layer 11, and the mask patterns of the different mask sub-plates 24 are the same. In the above case, the forming the second transparent conductive layer 15 on the side of the second carrier transmission layer 14 facing away from the light absorption layer 11 by using the physical vapor deposition process or the chemical vapor deposition process under the mask effect of the mask plate 23 includes the steps of: as shown in fig. 11 to 13, during the deposition of the second transparent conductive layer 15, at least two mask sub-plates 24 positioned at the top or at the bottom are fixed, and the remaining mask sub-plates 24 are moved. In this case, during the process of depositing the second transparent conductive layer 15, the mask patterns of the different mask sub-masks 24 included in the mask 23 are vertically overlapped, and at this time, the cross-sectional area of the side of the second transparent conductive layer 15 close to the second carrier transport layer 14 is the largest. Along with the lapse of deposition time, at least two mask sub-plates 24 positioned at the top or at the bottom are fixed, and the rest of mask sub-plates 24 are moved, at this time, the combined mask pattern formed by the different mask sub-plates 24 together is reduced in area compared with the mask pattern of a single mask sub-plate 24, so that the cross-sectional area of the second transparent conductive layer 15 along the thickness direction is gradually reduced, the specific surface area of the side surface of the second transparent conductive layer 15 facing away from the second carrier transmission layer 14 is further increased, and the light trapping effect of the side of the second transparent conductive layer 15 facing away from the second carrier transmission layer 14 is improved.
It will be appreciated that during the deposition of the second transparent conductive layer 15, either one of the top mask 24 and the bottom mask 24 of the at least two mask 24 may be fixed. In addition, the number of mask sub-plates included in the mask plate and the moving modes of the rest mask sub-plates in the process of depositing the second transparent conductive layer can influence the appearance of the second transparent conductive layer with the suede structure, so that the number of mask sub-plates included in the mask plate and the moving modes of the rest mask sub-plates in the process of depositing the second transparent conductive layer can be determined according to the appearance of the suede structure of the second transparent conductive layer in an actual application scene.
For example: as shown in fig. 7, when the second transparent conductive layer 15 includes a plurality of suede structures that are distributed at intervals, and each suede structure is a triangular prism structure with a right trapezoid cross section, the mask may include two mask sub-masks, and the mask sub-mask located at the top or the mask sub-mask located at the bottom in the process of depositing the second transparent conductive layer 15 moves along the direction of the spaced arrangement of different suede structures.
Also for example: when the second transparent conductive layer 15 includes a plurality of textured structures having pyramid shapes as shown in fig. 8, the mask plate 23 may include three mask sub-plates 24 as shown in fig. 9. As shown in fig. 10 to 13, the first mask sub-plate 25 may be fixed on the top, and the remaining second mask sub-plate 26 and third mask sub-plate 27 may move in opposite directions along the diagonal direction thereof.
In an actual manufacturing process, if the manufactured solar cell further includes the antireflection layer, after forming the second transparent conductive layer on the side of the second carrier transmission layer facing away from the light absorption layer, before forming the second electrode on the side of the second transparent conductive layer facing away from the second carrier transmission layer, the manufacturing method of the solar cell further includes: an anti-reflection layer is formed overlying the second carrier transport layer and the second transparent conductive layer. In particular, the anti-reflection layer may be formed by a chemical vapor deposition process or the like, and the thickness and material of the anti-reflection layer may be referred to as above.
Then, a first electrode may be formed on a side of the first transparent conductive layer facing away from the first carrier transport layer, and a second electrode may be formed on a side of the second transparent conductive layer facing away from the second carrier transport layer, using processes such as screen printing, ink jet printing, electroplating, or evaporation.
The beneficial effects of the second aspect and various implementations of the embodiments of the present invention may refer to the beneficial effect analysis in the first aspect and various implementations of the first aspect, which are not described herein.
In the above description, technical details of patterning, etching, and the like of each layer are not described in detail. Those skilled in the art will appreciate that layers, regions, etc. of the desired shape may be formed by a variety of techniques. In addition, to form the same structure, those skilled in the art can also devise methods that are not exactly the same as those described above. In addition, although the embodiments are described above separately, this does not mean that the measures in the embodiments cannot be used advantageously in combination.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be made by those skilled in the art without departing from the scope of the disclosure, and such alternatives and modifications are intended to fall within the scope of the disclosure.
Claims (15)
1. A solar cell, comprising: the light-absorbing layer is formed of a light-absorbing layer,
the first carrier transmission layer and the first transparent conductive layer are sequentially arranged on one side of the backlight surface of the light absorption layer along the thickness direction of the light absorption layer;
the second carrier transmission layer and the second transparent conductive layer are sequentially arranged on one side of the light facing surface of the light absorption layer along the thickness direction of the light absorption layer; the second carrier transmission layer and the first carrier transmission layer are opposite in conductivity type, and the second transparent conductive layer is provided with a penetrating light transmission pattern;
a first electrode formed on a side of the first transparent conductive layer facing away from the first carrier transport layer;
and a second electrode formed on a side of the second transparent conductive layer facing away from the second carrier transport layer; the second electrode is coupled to portions of the second transparent conductive layer.
2. The solar cell according to claim 1, wherein the light-transmitting pattern includes a plurality of light-transmitting portions disposed at intervals, each of the light-transmitting portions having a width greater than 0 and less than a photogenerated carrier diffusion length corresponding to the light-absorbing layer.
3. The solar cell according to claim 1 or 2, wherein the second transparent conductive layer comprises a plurality of transparent conductive portions arranged at intervals; the projection contours of the transparent conductive parts on the first carrier transmission layer are complementary with the projection contours of the light transmission patterns on the first carrier transmission layer.
4. The solar cell according to claim 3, wherein each of the transparent conductive portions has a long-strip-like structure or an L-like structure; and/or the number of the groups of groups,
the width of the transparent conductive part is more than or equal to 100nm and less than or equal to 1 mu m; and/or the number of the groups of groups,
the distance between two adjacent transparent conductive parts is equal.
5. The solar cell according to claim 1 or 2, wherein a side surface of the second transparent conductive layer facing away from the second carrier transport layer is textured, the second transparent conductive layer comprising a plurality of textured structures coupled to each other.
6. The solar cell according to claim 5, wherein each of the textured structures has a sidewall disposed obliquely with respect to the light-facing surface of the second carrier-transporting layer, and an angle between the sidewall and the light-facing surface of the second carrier-transporting layer is 40 ° or more and 70 ° or less; and/or the number of the groups of groups,
the suede structure is a pyramid-like suede structure; and/or the number of the groups of groups,
the geometric centers of the suede structures are arranged in a staggered lattice mode.
7. The solar cell according to claim 1, wherein a thickness of the second transparent conductive layer is 10nm or more and 100nm or less.
8. The solar cell of claim 1, further comprising an anti-reflective layer; the anti-reflection layer covers the second carrier transport layer and the second transparent conductive layer; the second electrode penetrates the anti-reflection layer and is coupled with the second transparent conductive layer.
9. The solar cell according to claim 1, wherein the solar cell is a perovskite solar cell, an organic solar cell or a copper indium gallium selenide solar cell.
10. The solar cell according to claim 1, wherein in the case where the light absorbing layer is a perovskite light absorbing layer, the first carrier transporting layer is a hole transporting layer and the second carrier transporting layer is an electron transporting layer.
11. The solar cell of claim 1, wherein the solar cell is a stacked solar cell; the laminated solar cell comprises a bottom cell and a top cell which are connected in series; wherein,
the top cell includes the second transparent conductive layer, the second carrier transport layer, the light absorbing layer, the first carrier transport layer, and the first transparent conductive layer;
the first electrode is positioned on one side of the second transparent conducting layer, which is away from the second carrier transmission layer; the second electrode is located on a side of the bottom cell facing away from the top cell.
12. A method for manufacturing a solar cell, comprising:
providing a substrate;
sequentially forming a first transparent conductive layer, a first carrier transmission layer, a light absorption layer and a second carrier transmission layer on the substrate; wherein the first carrier transport layer and the first transparent conductive layer are positioned on the backlight surface side of the light absorption layer, and the second carrier transport layer and the light facing surface side of the light absorption layer; the second carrier transport layer and the first carrier transport layer are opposite in conductivity type;
Forming a second transparent conductive layer on one side of the second carrier transport layer away from the light absorption layer; the second transparent conductive layer is provided with a penetrating light-transmitting pattern;
forming a first electrode on one side of the first transparent conductive layer away from the first carrier transport layer;
forming a second electrode on one side of the second transparent conductive layer away from the second carrier transport layer; the second electrode is coupled to portions of the second transparent conductive layer.
13. The method of claim 12, wherein forming a second transparent conductive layer on a side of the second carrier transport layer facing away from the light absorbing layer, comprises:
a mask plate is arranged on one side, away from the light absorption layer, of the second carrier transmission layer;
and under the mask action of the mask plate, forming the second transparent conductive layer on one side of the second carrier transmission layer, which is away from the light absorption layer, by adopting a physical vapor deposition process or a chemical vapor deposition process.
14. The method of manufacturing a solar cell according to claim 13, wherein the mask includes at least two mask sub-masks sequentially arranged in a thickness direction of the light absorbing layer; the mask patterns of different mask sub-plates are the same;
Under the mask action of the mask, a physical vapor deposition process or a chemical vapor deposition process is adopted to form the second transparent conductive layer on one side of the second carrier transmission layer, which is away from the light absorption layer, and the method comprises the following steps:
and in the process of depositing the second transparent conductive layer, fixing the mask sub-plates positioned at the top or the bottom of the at least two mask sub-plates, and moving the rest mask sub-plates.
15. The method according to any one of claims 12 to 14, wherein after forming the second transparent conductive layer on a side of the second carrier transport layer facing away from the light absorbing layer, the method further comprises, before forming the second electrode on a side of the second transparent conductive layer facing away from the second carrier transport layer:
an anti-reflection layer is formed overlying the second carrier transport layer and the second transparent conductive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311141869.3A CN117042480A (en) | 2023-09-05 | 2023-09-05 | Solar cell and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311141869.3A CN117042480A (en) | 2023-09-05 | 2023-09-05 | Solar cell and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117042480A true CN117042480A (en) | 2023-11-10 |
Family
ID=88626393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311141869.3A Pending CN117042480A (en) | 2023-09-05 | 2023-09-05 | Solar cell and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117042480A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118019366A (en) * | 2024-04-09 | 2024-05-10 | 晶科能源(海宁)有限公司 | Laminated solar cell, solar cell and photovoltaic module |
-
2023
- 2023-09-05 CN CN202311141869.3A patent/CN117042480A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118019366A (en) * | 2024-04-09 | 2024-05-10 | 晶科能源(海宁)有限公司 | Laminated solar cell, solar cell and photovoltaic module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10672930B2 (en) | Photoelectric conversion device and photoelectric conversion module | |
| US10333016B2 (en) | Multi-junction photoelectric conversion device and photoelectric conversion module | |
| US20120167978A1 (en) | Solar cell and method for manufacturing the same | |
| KR20120023391A (en) | Solar cell and manufacturing method thereof | |
| KR20180130397A (en) | Method of manufacturing perovskite silicon tandem solar cell | |
| US9825190B2 (en) | Solar cell and method for manufacturing the same | |
| WO2013125036A1 (en) | Photovoltaic element, method for manufacturing same, and photovoltaic module | |
| US20130160840A1 (en) | Solar cell | |
| CN117042480A (en) | Solar cell and manufacturing method thereof | |
| KR20110034930A (en) | Solar cell and method for manufacturing the same | |
| CN110890464A (en) | Solar cell and preparation method thereof | |
| KR101166456B1 (en) | Solar cell and method for fabricating the same | |
| KR20120037277A (en) | Solar cell and manufacturing method thereof | |
| US9614108B1 (en) | Optically-thin chalcogenide solar cells | |
| JP7453283B2 (en) | Semiconductor substrates, solar cells and photovoltaic modules | |
| US20130025675A1 (en) | Solar cell and method for manufacturing same | |
| EP4181206A1 (en) | Solar cell module, manufacturing method thereof, and photovoltaic module | |
| JP2024022417A (en) | Solar cell and photovoltaic module | |
| KR20110007499A (en) | Solar cell and manufacturing mehtod of the same | |
| KR20210039281A (en) | Perovskite silicon tandem solar cell and method for manufacturing the same | |
| CN114203843A (en) | Back contact type perovskite/silicon heterojunction laminated cell assembly, preparation method thereof and solar cell | |
| CN117279408B (en) | Laminated battery and preparation method thereof | |
| KR101199214B1 (en) | Bifacial Photovoltaic Localized Emitter Solar Cell and Method for Manufacturing Thereof | |
| US20240234612A1 (en) | Method for preparing solar cell, solar cell, and tandem solar cell | |
| US20240237368A1 (en) | Solar cell and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |