CN117042427A - Composite material with high-frequency wave absorbing performance and preparation method and application thereof - Google Patents
Composite material with high-frequency wave absorbing performance and preparation method and application thereof Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 36
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 36
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 29
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 23
- 229910052719 titanium Inorganic materials 0.000 claims description 23
- 239000010936 titanium Substances 0.000 claims description 23
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 22
- 238000007605 air drying Methods 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- VZLKPFKQMKUHFF-UHFFFAOYSA-N N-methylmethanamine titanium Chemical compound [Ti].CNC.CNC.CNC.CNC VZLKPFKQMKUHFF-UHFFFAOYSA-N 0.000 claims description 4
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 10
- 239000006096 absorbing agent Substances 0.000 abstract description 3
- 230000003993 interaction Effects 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 239000011358 absorbing material Substances 0.000 abstract description 2
- 239000002243 precursor Substances 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 239000006185 dispersion Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
- C01B32/174—Derivatisation; Solubilisation; Dispersion in solvents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/22—Electronic properties
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Abstract
A composite material with high-frequency wave absorbing performance, and its preparation method and application are provided. The application belongs to the technical field of nano wave-absorbing materials. The application aims to solve the technical problem that the existing wave-absorbing composite material has poor absorption performance on high-frequency electromagnetic waves. According to the application, the carbon nano tube modified by titanium dioxide is prepared by utilizing an ALD (atomic layer deposition) process, so that electromagnetic wave attenuation is promoted, and further, the wave absorbing performance is regulated, and finally, the composite material with the wave absorbing performance in a high frequency band is obtained. According to the application, parameters such as cycle times, precursor deposition temperature, pulse time and the like are controlled, so that the number of titanium dioxide particles modified on the surface of the carbon nanotube is regulated, impedance matching is regulated, and additional repeated reflection and electromagnetic absorber interaction are added, so that the reflection loss value can be increased, the effective bandwidth is increased, the wave absorbing performance of a Ku wave band is obviously improved, and the method can be used for absorbing high-frequency electromagnetic waves.
Description
Technical Field
The application belongs to the technical field of nano wave-absorbing materials, and particularly relates to a composite material with high-frequency wave-absorbing performance, and a preparation method and application thereof.
Background
With the development and progress of technology, electronic devices are widely seen in life and military of people, and electromagnetic pollution is also becoming serious. Because electromagnetic waves are widely applied in the high-frequency range, the electromagnetic wave interference is additionally serious, and the interference can not only have adverse effects on the physical health of people, but also have adverse effects on working electronic equipment, so that the research on materials with excellent high-frequency wave absorbing performance is particularly important. However, the defects of high density, poor absorption performance, narrow absorption bandwidth and the like of the traditional loss material severely restrict the practical application of the traditional loss material in the field of electromagnetic wave absorption.
Carbon nanotubes are ideal non-magnetic conductors whose absorption of electromagnetic waves results mainly from conduction losses. Second, dielectric loss is another loss of the carbon nanotubes to absorb electromagnetic waves. The dipole loss caused by the rotation of the electric or magnetic dipoles of the carbon nanotubes significantly increases the dielectric loss. However, pure carbon nanotubes are insufficient to impart high electromagnetic wave absorption properties to materials, because their excessive conductivity may cause electromagnetic wave reflection and impedance mismatch at the surface. Carbon nanotubes can be used as templates for depositing semiconductor nanoparticles, which is important for adjusting their impedance matching properties.
Titanium dioxide has thermal stability and a relatively high relative dielectric constant, and particularly titanium dioxide with a large surface area can additionally reflect repeatedly to strengthen interaction of electromagnetic absorbers, so that electromagnetic absorption capacity is enhanced. But due to TiO 2 The dielectric loss performance of the material is general and has no magnetic loss capability, so that the material can be used for potentialAnd (5) microwave absorption. Therefore, it is important to develop a composite material having excellent high-frequency wave absorbing performance.
Disclosure of Invention
The application aims to solve the technical problem that the existing wave-absorbing composite material has poor absorption performance on high-frequency electromagnetic waves, and provides a composite material with high-frequency wave-absorbing performance, and a preparation method and application thereof.
The application aims at being completed by the following technical scheme:
one of the purposes of the application is to provide a preparation method of a composite material with high-frequency wave absorbing performance, which comprises the following steps:
s1: dispersing the carbon nano tube in ethanol by ultrasonic, then dripping the carbon nano tube on the surface of a quartz wafer, and carrying out air drying treatment;
s2: transferring into an ALD reactor, exposing in tetradimethylamine titanium and water for atomic layer deposition, and obtaining the composite material with high-frequency wave absorbing performance.
Further defined, the concentration of carbon nanotubes in the ethanol in S1 is 0.2-0.5mg/mL.
Further defined, the ultrasonic dispersion in S1 is for 1-2 hours.
Further defined, the air is dried in S1 for 1-2 hours.
Further defined, the substrate temperature at the time of deposition in S2 is 175-200 ℃.
Further defined, the temperature of the titanium tetradimethylamine and water at the time of deposition in S2 is 50-75 ℃.
Further defined, the atomic layer deposition process in S2 is: the pulse time of the titanium tetradimethylamine is 0.1-0.3s, the pulse time of the water is 0.01-0.03s, and the pulse time of the water is 5-15s, which is one deposition cycle.
Further defined, the atomic layer deposition cycle in S2 is 50-300 times.
The second object of the present application is to provide a composite material with high-frequency wave absorbing performance, which is made by the method, wherein the composite material with high-frequency wave absorbing performance is a carbon nanotube modified by titanium dioxide.
The application also aims to provide an application of the composite material with high-frequency wave absorbing performance, which is prepared by the method, in absorbing high-frequency electromagnetic waves.
Compared with the prior art, the application has the remarkable effects that:
(1) According to the application, the semiconductor titanium dioxide particles modified on the surface of the carbon nano tube are used for adjusting impedance matching, promoting electromagnetic wave attenuation and further adjusting wave absorbing performance, so that the composite material with excellent wave absorbing performance in a high frequency band is finally obtained.
(2) The application realizes the accurate control of the thickness of the deposition layer by controlling the parameters of the pulse time, the deposition temperature, the circulation times and the like of the precursor, the thickness regulation precision can reach the angstrom level, and the structural stability of the nano material is obviously improved.
Drawings
FIG. 1 is an SEM image of a composite material prepared according to example 1;
FIG. 2 is an SEM image of a composite material prepared according to example 7;
fig. 3 is a reflection loss diagram of the composite materials prepared in example 1 and example 7.
Detailed Description
The present application will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The experimental methods used in the following examples are conventional methods unless otherwise specified. The materials, reagents, methods and apparatus used, without any particular description, are those conventional in the art and are commercially available to those skilled in the art.
The terms "comprising," "including," "having," "containing," or any other variation thereof, as used in the following embodiments, are intended to cover a non-exclusive inclusion. For example, a composition, step, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, step, method, article, or apparatus.
When an equivalent, concentration, or other value or parameter is expressed as a range, preferred range, or a range bounded by a list of upper preferable values and lower preferable values, this is to be understood as specifically disclosing all ranges formed from any pair of any upper range limit or preferred value and any lower range limit or preferred value, regardless of whether ranges are separately disclosed. For example, when ranges of "1 to 5" are disclosed, the described ranges should be construed to include ranges of "1 to 4", "1 to 3", "1 to 2 and 4 to 5", "1 to 3 and 5", and the like. When a numerical range is described herein, unless otherwise indicated, the range is intended to include its endpoints and all integers and fractions within the range. In the description and claims of the application, the range limitations may be combined and/or interchanged, if not otherwise specified, including all the sub-ranges subsumed therein.
The indefinite articles "a" and "an" preceding an element or component of the application are not limited to the requirement (i.e. the number of occurrences) of the element or component. Thus, the use of "a" or "an" should be interpreted as including one or at least one, and the singular reference of an element or component includes the plural reference unless the amount clearly dictates otherwise.
Reference to "one embodiment" or "an embodiment" of the present application means that a particular feature, structure, or characteristic may be included in at least one implementation of the present application. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments.
The endpoints of the ranges and any values disclosed in the application are not limited to the precise range or value, and the range or value should be understood to include values close to the range or value. For numerical ranges, one or more new numerical ranges may be found between the endpoints of each range, between the endpoint of each range and the individual point value, and between the individual point value, in combination with each other, and are to be considered as specifically disclosed herein.
Example 1
The preparation method of the composite material with the high-frequency wave absorbing performance comprises the following steps:
s1: dispersing 0.01g of carbon nano tube in 20mL of ethanol by ultrasonic for 1h, then dripping the dispersion liquid on the surface of a quartz wafer, and air-drying for 1h;
s2: transferring into a closed type hot wall ALD reactor, exposing in tetradimethylamine titanium and water for atomic layer deposition, wherein the substrate temperature is 200 ℃, the temperature of the tetradimethylamine titanium and the water is 75 ℃, the pulse time of the tetradimethylamine titanium is 0.15s, the pulse time of nitrogen is 8s, the pulse time of the water is 0.015s, the nitrogen is 8s, the cycle number is 150, and the carbon nano tube modified by titanium dioxide is obtained, namely the composite material with high-frequency wave absorbing performance.
Example 2
The preparation method of the composite material with the high-frequency wave absorbing performance comprises the following steps:
s1: dispersing 0.01g of single-walled carbon nanotube in 50mL of ethanol for 1h, then dripping the dispersion liquid on the surface of a quartz wafer, and air-drying for 1h;
s2: transferring into a closed type hot wall ALD reactor, exposing in tetradimethylamine titanium and water for atomic layer deposition, wherein the substrate temperature is 200 ℃, the temperature of the tetradimethylamine titanium and the water is 75 ℃, the pulse time of the tetradimethylamine titanium is 0.15s, the pulse time of nitrogen is 8s, the pulse time of the water is 0.015s, the nitrogen is 8s, the cycle number is 150, and the carbon nano tube modified by titanium dioxide is obtained, namely the composite material with high-frequency wave absorbing performance.
Example 3
The preparation method of the composite material with the high-frequency wave absorbing performance comprises the following steps:
s1: dispersing 0.01g of carbon nano tube in 20mL of ethanol by ultrasonic for 2h, then dripping the dispersion liquid on the surface of a quartz wafer, and air-drying for 1h;
s2: transferring into a closed type hot wall ALD reactor, exposing in tetradimethylamine titanium and water for atomic layer deposition, wherein the substrate temperature is 200 ℃, the temperature of the tetradimethylamine titanium and the water is 75 ℃, the pulse time of the tetradimethylamine titanium is 0.15s, the pulse time of nitrogen is 8s, the pulse time of the water is 0.015s, the nitrogen is 8s, the cycle number is 150, and the carbon nano tube modified by titanium dioxide is obtained, namely the composite material with high-frequency wave absorbing performance.
Example 4
The preparation method of the composite material with the high-frequency wave absorbing performance comprises the following steps:
s1: dispersing 0.01g of carbon nano tube in 20mL of ethanol by ultrasonic for 1h, then dripping the dispersion liquid on the surface of a quartz wafer, and air-drying for 2h;
s2: transferring into a closed type hot wall ALD reactor, exposing in tetradimethylamine titanium and water for atomic layer deposition, wherein the substrate temperature is 200 ℃, the temperature of the tetradimethylamine titanium and the water is 75 ℃, the pulse time of the tetradimethylamine titanium is 0.15s, the pulse time of nitrogen is 8s, the pulse time of the water is 0.015s, the nitrogen is 8s, the cycle number is 150, and the carbon nano tube modified by titanium dioxide is obtained, namely the composite material with high-frequency wave absorbing performance.
Example 5
The preparation method of the composite material with the high-frequency wave absorbing performance comprises the following steps:
s1: dispersing 0.01g of carbon nano tube in 20mL of ethanol by ultrasonic for 1h, then dripping the dispersion liquid on the surface of a quartz wafer, and air-drying for 1h;
s2: transferring into a closed type hot wall ALD reactor, exposing in tetradimethylamine titanium and water for atomic layer deposition, wherein the substrate temperature is 200 ℃, the temperature of the tetradimethylamine titanium and the water is 50 ℃, the pulse time of the tetradimethylamine titanium is 0.15s, the pulse time of nitrogen is 8s, the pulse time of the water is 0.015s, the nitrogen is 8s, the cycle number is 150, and the carbon nano tube modified by titanium dioxide, namely the composite material with high-frequency wave absorbing performance, is obtained.
Example 6
The preparation method of the composite material with the high-frequency wave absorbing performance comprises the following steps:
s1: dispersing 0.01g of carbon nano tube in 20mL of ethanol by ultrasonic for 1h, then dripping the dispersion liquid on the surface of a quartz wafer, and air-drying for 1h;
s2: transferring into a closed type hot wall ALD reactor, exposing in tetradimethylamine titanium and water for atomic layer deposition, wherein the substrate temperature is 150 ℃, the temperature of the tetradimethylamine titanium and the water is 75 ℃, the pulse time of the tetradimethylamine titanium is 0.15s, the pulse time of nitrogen is 8s, the pulse time of the water is 0.015s, the nitrogen is 8s, the cycle number is 150, and the carbon nano tube modified by titanium dioxide is obtained, namely the composite material with high-frequency wave absorbing performance.
Example 7
The preparation method of the composite material with the high-frequency wave absorbing performance comprises the following steps:
s1: dispersing 0.01g of carbon nano tube in 20mL of ethanol by ultrasonic for 1h, then dripping the dispersion liquid on the surface of a quartz wafer, and air-drying for 1h;
s2: transferring into a closed type hot wall ALD reactor, exposing in tetradimethylamine titanium and water for atomic layer deposition, wherein the substrate temperature is 200 ℃, the temperature of the tetradimethylamine titanium and the water is 75 ℃, the pulse time of the tetradimethylamine titanium is 0.15s, the pulse time of nitrogen is 8s, the pulse time of the water is 0.015s, the nitrogen is 8s, the cycle number is 250, and the carbon nano tube modified by titanium dioxide, namely the composite material with high-frequency wave absorbing performance, is obtained.
Comparative example
(one) SEM image of the morphology of the composite material obtained in example 1 is shown in FIG. 1. After deposition by ALD, a plurality of granular titanium dioxide is modified on the surface of the carbon nano tube, impedance matching is adjusted by modifying the titanium dioxide on the surface, and interaction of electromagnetic absorbers can be enhanced by additional repeated reflection, so that electromagnetic absorption capacity is enhanced.
(II) SEM image of morphology of the composite material obtained in example 7 is shown in FIG. 2. As can be seen from fig. 2, the number of cycles was increased, and thus the number of titanium dioxide particles on the surface of the carbon nanotube was increased, as compared with example 1.
(III) reflection loss diagrams of the composite materials prepared in example 1 and example 7 are shown in FIG. 3. The samples of example 1 and example 7 and the original carbon nanotubes were prepared into 10wt% wax rings, the wave-absorbing data thereof were measured by a coaxial line method, and the finally prepared samples had excellent wave-absorbing properties in ku band (12-18 GHz). As can be seen from fig. 3, the original carbon nanotube has a wave absorbing performance in Ku band up to-10.5 dB (17.9 GHz), and has no effective bandwidth, and the wave absorbing performance is relatively poor. After 150 times of modification of titanium dioxide in ALD deposition cycle, the maximum RL value can reach 29.2dB (16.85 GHz), and the method is remarkably improved compared with the original carbon nano tube. After 250 times of modification of titanium dioxide through ALD deposition cycle, the maximum RL value can reach 44.25dB (13.92 GHz), the maximum effective bandwidth can reach 4.87GHz (11.66-16.53 GHz), and the method has more remarkable improvement compared with the original carbon nano tube. After the titanium dioxide is modified, the carbon nano tube subjected to impedance matching is adjusted, so that the reflection loss value can be improved, the effective bandwidth is increased, the wave absorbing performance of a Ku wave band is obviously improved, and the method has important significance in the wave absorbing field.
In the foregoing, the present application is merely preferred embodiments, which are based on different implementations of the overall concept of the application, and the protection scope of the application is not limited thereto, and any changes or substitutions easily come within the technical scope of the present application as those skilled in the art should not fall within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.
Claims (10)
1. The preparation method of the composite material with the high-frequency wave absorbing performance is characterized by comprising the following steps of:
s1: dispersing the carbon nano tube in ethanol by ultrasonic, then dripping the carbon nano tube on the surface of a quartz wafer, and carrying out air drying treatment;
s2: transferring into an ALD reactor, exposing in tetradimethylamine titanium and water for atomic layer deposition, and obtaining the composite material with high-frequency wave absorbing performance.
2. The method of claim 1, wherein the concentration of carbon nanotubes in ethanol in S1 is 0.2-0.5mg/mL.
3. The method of claim 1, wherein the ultrasonic dispersion in S1 is for 1-2 hours.
4. The method of claim 1, wherein the air is dried in S1 for 1-2 hours.
5. The method of claim 1, wherein the substrate temperature at the time of deposition in S2 is 175-200 ℃.
6. The method according to claim 1, wherein the temperature of titanium tetradimethylamine and water at the time of deposition in S2 is 50-75 ℃.
7. The method of claim 1, wherein the atomic layer deposition process in S2 is: the pulse time of the titanium tetradimethylamine is 0.1-0.3s, the pulse time of the water is 0.01-0.03s, and the pulse time of the water is 5-15s, which is one deposition cycle.
8. The method of claim 7, wherein the deposition is cycled between 50 and 300 times.
9. The composite material with high-frequency wave absorbing property prepared by the method of any one of claims 1 to 7, which is a carbon nanotube modified by titanium dioxide.
10. Use of the composite material with high-frequency wave absorbing properties according to any one of claims 1 to 7 for absorbing high-frequency electromagnetic waves.
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CN106486349A (en) * | 2015-08-25 | 2017-03-08 | Asm Ip控股有限公司 | Deposition for the titanium nano-stack of production of integrated circuits |
CN111454691A (en) * | 2020-04-14 | 2020-07-28 | 大连理工大学 | Graphene/amorphous titanium dioxide nanorod composite material, preparation method and application thereof |
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