CN117040514A - MOSFET switching circuit - Google Patents
MOSFET switching circuit Download PDFInfo
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- CN117040514A CN117040514A CN202310803579.4A CN202310803579A CN117040514A CN 117040514 A CN117040514 A CN 117040514A CN 202310803579 A CN202310803579 A CN 202310803579A CN 117040514 A CN117040514 A CN 117040514A
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- 238000001816 cooling Methods 0.000 claims abstract description 28
- 238000003745 diagnosis Methods 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000012544 monitoring process Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 11
- 238000011084 recovery Methods 0.000 claims description 10
- 102000004129 N-Type Calcium Channels Human genes 0.000 claims description 6
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- 238000007621 cluster analysis Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 3
- 125000003275 alpha amino acid group Chemical group 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000012502 risk assessment Methods 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000003381 stabilizer Substances 0.000 claims description 2
- 230000002708 enhancing effect Effects 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 3
- 238000012545 processing Methods 0.000 description 5
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F18/00—Pattern recognition
- G06F18/20—Analysing
- G06F18/23—Clustering techniques
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
Abstract
The invention discloses a MOSFET switching circuit, relates to the field of transistor structures, and solves the problems of leakage current, limited frequency and poor stability of the traditional MOSFET switching circuit; a MOSFET switching circuit comprises a grid electrode, a bottom connection area, a source area, a silicon substrate, a load loop, a protection circuit, an intelligent control system, a drain junction area, a cooling system and a driving circuit; the invention ensures that the circuit or the device is not damaged or broken under bad conditions by arranging the protection circuit, thereby enhancing the reliability of the MOSFET switching circuit; the intelligent control system is adopted to carry out remote monitoring, fault diagnosis and predictive maintenance on the MOSFET switching circuit, so that the reliability and the working efficiency of the switching circuit are improved; according to the invention, the working temperature of the MOSFET is reduced by arranging the cooling system, so that the occurrence of leakage current is reduced; the invention improves the working frequency of the switch circuit by arranging the driving circuit.
Description
Technical Field
The invention relates to the field of transistor structures, in particular to a MOSFET switching circuit.
Background
The MOSFET is a metal oxide semiconductor field effect transistor, and is one of the commonly used transistor types, and its structure includes a gate electrode, a bottom contact region, a source region and a silicon substrate, and the MOSFET switching circuit has been widely used in the power electronics field, including power switching, motor driving and light control. Although considerable research and practical experience has been available, the following drawbacks still exist:
1. the problem of leakage current is more remarkable particularly in a high-temperature working environment due to the fact that the MOSFET has larger leakage current due to defects or poor stability which are difficult to avoid in the production process, and the performance and the service life of the switch circuit are affected, and even faults and accidents are caused;
2. the frequency is limited, and the working frequency of the switching circuit is limited due to the influence of factors such as input capacitance, output capacitance, reverse recovery capacitance, leakage inductance and the like existing in the MOSFET.
3. The stability is poor, and the MOSFET switching circuit is easy to be damaged or malfunction under the severe environments of high voltage, high temperature and high humidity.
In order to solve the above problems, a MOSFET switching circuit with less leakage current, high frequency and high stability is needed.
Disclosure of Invention
Aiming at the defects of the technology, the invention discloses a MOSFET switching circuit, which ensures that a circuit or a device is not damaged or broken under bad conditions by arranging a protection circuit, thereby enhancing the reliability of the MOSFET switching circuit; the intelligent control system is adopted to carry out remote monitoring, fault diagnosis and predictive maintenance on the MOSFET switching circuit, so that the reliability and the working efficiency of the switching circuit are improved; according to the invention, the working temperature of the MOSFET is reduced by arranging the cooling system, so that the occurrence of leakage current is reduced; the invention improves the working frequency of the switch circuit by arranging the driving circuit.
A MOSFET switching circuit comprising: the device comprises a grid electrode, a bottom connection region, a source region, a silicon substrate, a load loop, a protection circuit, an intelligent control system, a drain junction region, a cooling system and a driving circuit; wherein:
a gate for accessing an electrical signal to control current flow in the MOSFET;
the bottom connection area is used for a grounded area;
a source region for providing a conduit for electrons to enter the MOSFET;
the silicon substrate is used for providing support, current load sharing and electrical isolation for other devices;
a load loop for delivering power generated by the MOSFET into a load, the load loop including a noise reduction inductance for removing a circuit noise signal and a commutation diode for preventing reverse leakage of the MOSFET tube;
the protection circuit is used for ensuring that the circuit or the device is not damaged or broken under bad conditions, and comprises a reverse connection protection circuit, an overcurrent protection circuit, a short-circuit protection circuit and an overvoltage protection circuit, wherein the reverse connection protection circuit is used for preventing the circuit from being damaged due to the fact that the circuit is connected with an anode and a cathode by mistake, the overcurrent protection circuit is used for immediately cutting off the circuit when an excessive current is input into the circuit to prevent overload and damage of the device, the short-circuit protection circuit is used for preventing high current from being generated due to short circuit of the circuit, and the overvoltage protection circuit is used for protecting the switch circuit from being impacted by voltage and current higher than normal voltage;
an intelligent control system: the method is used for remotely monitoring, diagnosing faults and predicting and maintaining the working state of the MOSFET switching circuit so as to improve the reliability and the working efficiency of the switching circuit;
the drain junction region is used for flowing and controlling current, and the MOSFET controls the resistance of the drain junction region by adjusting the grid voltage so as to realize a switching circuit;
the cooling system is used for reducing the working temperature of the MOSFET so as to reduce leakage current;
a driving circuit for controlling the switching behavior of the MOSFET;
the grid electrode is positioned between the source region and the drain junction region, the silicon substrate is positioned below the grid electrode and the source region, the bottom grounding region is grounded, and the load loop, the protection circuit, the intelligent control system, the cooling system and the driving circuit are connected through electric signals.
As a further technical scheme of the invention, the load loop reduces the leakage current amplitude by connecting the converter diode in parallel, the converter diode combines the high-speed switching characteristic of the MOSFET with the low on-resistance and the quick recovery characteristic of the Schottky diode, the quick switching is realized through the low on-resistance of the MOSFET in the forward on state, the quick recovery is realized through the low on-resistance of the Schottky diode in the reverse off state, and the occurrence of the leakage current of the switching circuit is effectively reduced.
As a further technical scheme of the present invention, the protection circuit performs circuit protection from multiple aspects to ensure safe operation and prolong the service life of the MOSFET, the reverse connection protection circuit comprises a diode and a protection baffle, the overcurrent protection circuit comprises a tube, a fuse wire and a self-recovery fuse wire, the short circuit protection circuit comprises a current limiting resistor, a platinum power fuse wire and a thermistor, and the overvoltage protection circuit comprises a voltage stabilizer, a fast reaction voltage limiter, a piezoresistor and a fuse wire.
As a further technical scheme of the invention, the intelligent control system adopts a fault diagnosis algorithm to process and analyze the fault condition of the MOSFET switch circuit, and the fault analysis algorithm is as follows:
firstly, faults occurring in the working process of a MOSFET switching circuit are classified according to types, the influence degree of the faults on the switching circuit is analyzed, the risk of the faults is obtained, and a fault risk function expression is shown as a formula (1):
（1）
in the formula (1), the components are as follows,for the probability of failure risk->Dynamic risk factor for the operation of a MOSFET switching circuit,/->In order to be dimensional in number,ngenerating fault types for the working process of the MOSFET switching circuit;
performing cluster analysis on the fault risk probability, and optimizing a fault risk assessment result to improve the accuracy of fault risk diagnosis, wherein a cluster analysis function is as follows:
（2）
in the formula (2), the amino acid sequence of the compound,representing an activation function->For the post-cluster fault diagnosis data set, +.>And calculating the types of faults encountered in the working process of the MOSFET switching circuit and providing corresponding fault solutions according to the formula (2) for the total number of the fault risk influence class types.
As a further technical scheme of the invention, the drain junction region comprises a p-type semiconductor and an n-type semiconductor, the high doping concentration part of the p-type semiconductor forms a p-type drain junction, the low doping concentration part of the n-type semiconductor forms an n-type channel polar plate, the p-type drain junction and the n-type channel polar plate are separated by a space charge region with high impedance to form a drain junction, the drain junction region is normally conducted under forward voltage, and the current flowing along the drain junction region is the drain current of the MOSFET.
As a further technical solution of the present invention, the cooling system includes a heat sink, a heat pipe, a water cooling and a fan, the heat sink is used for conducting heat, the heat pipe is used for transferring heat to the other end, the fan is used for discharging heat, the water cooling is used for connecting the MOSFET tube with water, the water cooling is used for absorbing heat of the MOSFET tube, and the fan is used for flowing air to reduce the temperature of the switching circuit of the MOSFET tube.
As a further technical scheme of the invention, the driving circuit comprises a driving signal generator, a driver and a driving protection device, wherein the driving signal generator comprises an oscillator and a counter, the on and off of the MOSFET are controlled by generating a PWM signal or a direct current signal with a certain frequency and a proper duty ratio, the driver comprises a transistor and an integrated circuit, the transistor and the integrated circuit are used for converting the PWM signal or the direct current signal into a control signal with a high level and a low level, the switching between the on and the off is controlled by a fast switch, and the driving protection device is used for protecting the MOSFET and the driver from being influenced by external factors and avoiding the damage or failure.
Compared with the prior art, the invention has the beneficial positive effects that:
the invention ensures that the circuit or the device is not damaged or broken under bad conditions by arranging the protection circuit, thereby enhancing the reliability of the MOSFET switching circuit; the intelligent control system is adopted to carry out remote monitoring, fault diagnosis and predictive maintenance on the MOSFET switching circuit, so that the reliability and the working efficiency of the switching circuit are improved;
according to the invention, the working temperature of the MOSFET is reduced by arranging the cooling system, so that the occurrence of leakage current is reduced; the invention improves the working frequency of the switch circuit by arranging the driving circuit.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings which are required in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from these drawings without inventive faculty for a person skilled in the art,
FIG. 1 is a block diagram of a MOSFET switching circuit of the present invention;
FIG. 2 is a schematic diagram of the overall structure of a MOSFET according to the present invention;
FIG. 3 is a diagram of a MOSFET protection circuit in accordance with the present invention;
FIG. 4 is a diagram of a MOSFET driving circuit in accordance with the present invention;
1-grid electrode, 2-bottom connection area, 3-source area, 4-silicon substrate, 5-load loop, 6-protection circuit, 7-drain junction area, 8-cooling system and 9-driving circuit.
Detailed Description
The following description of the embodiments of the present disclosure will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the disclosure. It should be understood that the description is only illustrative and is not intended to limit the scope of the invention. In addition, in the description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.
A MOSFET switching circuit, as shown in fig. 1, comprising: the device comprises a grid electrode 1, a bottom connection region 2, a source region 3, a silicon substrate 4, a load loop 5, a protection circuit 6, an intelligent control system, a drain junction region 7, a cooling system 8 and a driving circuit 9; as shown in fig. 2, wherein:
a gate 1 for switching in an electrical signal to control the flow of current in the MOSFET;
a bottom contact area 2 for a grounded area;
a source region 3 for providing a conduit for electrons to enter the MOSFET;
the silicon substrate 4 is used for providing support, current load sharing and electrical isolation for other devices;
a load loop 5 for transferring power generated by the MOSFET into a load, the load loop 5 comprising a noise reducing inductance for removing a circuit noise signal and a commutation diode, the noise reducing inductance comprising a capacitor, a capacitor and a capacitor, wherein
The converter diode is used for preventing the MOSFET from generating reverse leakage;
a protection circuit 6, wherein the protection circuit 6 is used for ensuring that a circuit or a device is not damaged or broken under bad conditions, the protection circuit 6 comprises a reverse connection protection circuit, an overcurrent protection circuit, a short-circuit protection circuit and an overvoltage protection circuit, the reverse connection protection circuit is used for preventing the circuit from being damaged due to the fact that the circuit is connected with an anode and a cathode by mistake, the overcurrent protection circuit is used for immediately cutting off the circuit when an excessive current is input into the circuit, the device is prevented from being overloaded and damaged, the short-circuit protection circuit is used for preventing high current from being generated due to the short circuit of the circuit, and the overvoltage protection circuit is used for protecting a switch circuit from being impacted by voltage and current higher than normal voltage;
an intelligent control system: the method is used for remotely monitoring, diagnosing faults and predicting and maintaining the working state of the MOSFET switching circuit so as to improve the reliability and the working efficiency of the switching circuit;
the drain junction region 7 is used for flowing and controlling current, and the MOSFET controls the resistance of the drain junction region 7 by adjusting the voltage of the grid electrode 1 so as to realize a switching circuit;
a cooling system 8 for reducing the operating temperature of the MOSFET tube and thus the leakage current;
a drive circuit 9 for controlling the switching behavior of the MOSFET;
the grid electrode 1 is located between the source region 3 and the drain junction region 7, the silicon substrate 4 is located below the grid electrode 1 and the source region 3, the bottom connection region 2 is grounded, and the load loop 5, the protection circuit 6, the intelligent control system, the cooling system 8 and the driving circuit 9 are connected through electric signals.
Further, the load loop 5 reduces the leakage current amplitude by connecting the converter diode in parallel, the converter diode combines the high-speed switching characteristic of the MOSFET with the low on-resistance and the fast recovery characteristic of the schottky diode, the fast switching is realized through the low on-resistance of the MOSFET in the forward on state, the fast recovery is realized through the low on-resistance of the schottky diode in the reverse off state, and the occurrence of the leakage current of the switching circuit is effectively reduced.
In a specific embodiment, when the MOSFET is in an off state, no path is connected with a load, the voltage at two ends of the load is zero, when the control signal polarizes the gate 1 of the MOSFET, the MOSFET is turned on, the resistance between the drain junction region 7 and the source region 3 is quite small, current flows from the source region 3 to the drain junction region 7 unhindered, at this time, the two ends of the load have an on voltage, the current passes through the load, when the control signal cancels the polarization of the gate 1 of the MOSFET, the MOSFET is changed from the on state to the off state, at this time, the resistance between the drain junction region 7 and the source region 3 becomes quite high, the current cannot pass, and the voltage at two ends of the load tends to zero.
Further, as shown in fig. 3, the protection circuit 6 performs circuit protection from various aspects to ensure safe operation and extend the service life of the MOSFET, the reverse connection protection circuit includes a diode and a protection barrier, the over-current protection circuit includes a tube, a fuse and a self-recovery fuse, the short circuit protection circuit includes a current limiting resistor, a platinum power fuse and a thermistor, and the over-voltage protection circuit includes a voltage regulator, a fast reaction voltage limiter, a varistor and a fuse.
In a specific embodiment, when the MOSFET is disturbed by an overcurrent, the protection circuit 6 detects the current exceeding the rated range, and timely cuts off the power supply of the MOSFET through the switching circuit to protect the MOSFET from being burnt out or damaged, when the MOSFET is disturbed by an overvoltage, the protection circuit 6 detects the voltage abnormality, timely cuts off the power supply of the MOSFET through the switching circuit to prevent the MOSFET from failing, and when the output load of the MOSFET is too large, the protection circuit 6 detects the current abnormality, and timely cuts off the power supply of the MOSFET to avoid the risk of damage or failure of the MOSFET caused by overload.
Further, the intelligent control system adopts a fault diagnosis algorithm to process and analyze the fault condition of the MOSFET switch circuit, and the fault analysis algorithm is as follows:
firstly, faults occurring in the working process of a MOSFET switching circuit are classified according to types, the influence degree of the faults on the switching circuit is analyzed, the risk of the faults is obtained, and a fault risk function expression is shown as a formula (1):
（1）
in the formula (1), the components are as follows,for the probability of failure risk->Dynamic risk factor for the operation of a MOSFET switching circuit,/->In order to be dimensional in number,ngenerating fault types for the working process of the MOSFET switching circuit;
performing cluster analysis on the fault risk probability, and optimizing a fault risk assessment result to improve the accuracy of fault risk diagnosis, wherein a cluster analysis function is as follows:
（2）
in the formula (2), the amino acid sequence of the compound,representing an activation function->For the post-cluster fault diagnosis data set, +.>And calculating the types of faults encountered in the working process of the MOSFET switching circuit and providing corresponding fault solutions according to the formula (2) for the total number of the fault risk influence class types.
In a specific embodiment, the intelligent control system adopts a fault diagnosis algorithm to process and analyze the fault condition of the MOSFET switching circuit in the working process, improves analysis accuracy by clustering the fault risk probability, processes and analyzes the fault condition of the MOSFET switching circuit and the conventional processing fault condition by comparing the fault diagnosis algorithm, and records the comparison result in a fault condition record table, as shown in table 1:
table 1: fault condition handling comparison record table
| Treatment mode (#) | Data group number (group) | Treatment time (min) | Data loss Rate (%) | Analytical accuracy (%) |
| Conventional treatment | 20 | 0.5 | 1.4 | 80 |
| Fault diagnosis | 20 | 0.2 | 0.6 | 90 |
| Conventional treatment | 50 | 0.8 | 1.5 | 85 |
| Fault diagnosis | 50 | 0.4 | 0.3 | 95 |
As can be seen from Table 1, the processing time and the data loss rate of the fault condition of the MOSFET switching circuit are lower than those of the conventional processing mode by adopting the fault diagnosis algorithm, and the analysis accuracy of the fault condition of the MOSFET switching circuit is higher than that of the conventional processing by adopting the fault diagnosis algorithm, so that the data analysis of Table 1 is obtained: and a fault diagnosis algorithm is adopted to carry out fault diagnosis processing analysis on the MOSFET switching circuit, so that the reliability and the working efficiency of the MOSFET switching circuit are improved.
Further, the drain junction region 7 includes a p-type semiconductor and an n-type semiconductor, the p-type semiconductor has a high doping concentration portion forming a p-type drain junction, the n-type semiconductor has a low doping concentration portion forming an n-type channel plate, the p-type drain junction and the n-type channel plate are separated by a space charge region with high impedance to form a drain junction, the drain junction region 7 is normally turned on under a forward voltage, and a current flowing along the drain junction region 7 is a drain current of the MOSFET.
In a specific embodiment, during normal operation, the drain junction region 7 of the MOSFET is reverse biased, and the current from the drain junction region 7 to the source region 3 is blocked, so that the MOSFET does not work, and in the process that the drain junction region 7 participates in a switching process, the current carrier 7 of the drain junction region 7 is accelerated, so that the charge of the drain region is quickly eliminated, quick on-off conversion is realized, and the switching speed and efficiency of the MOSFET are improved.
Further, as shown in fig. 3, the cooling system 8 includes a heat sink for conducting heat away, a heat pipe for transferring heat to the other end and discharging heat by the fan, a water cooling for associating the MOSFET with water, and a fan for flowing air to reduce the temperature of the MOSFET switching circuit by absorbing heat of the MOSFET by using water flow.
In a specific embodiment, the cooling system 8 of the MOSFET establishes a heat conduction path between the radiator and the MOSFET by carrying the radiator, when the MOSFET works, generated heat is rapidly transferred to the radiator in a heat conduction manner and is dissipated to the surrounding environment through the radiator, the radiator is provided with the fan, a large amount of air is introduced to increase the heat conduction efficiency between the surrounding air and the radiator, the temperature of the MOSFET is reduced, the normal work of the MOSFET is ensured, and a more efficient water cooling manner is adopted to dissipate heat when the heat dissipation effect of the radiator and the fan cannot meet the requirement.
Further, as shown in fig. 4, the driving circuit 9 includes a driving signal generator, a driver and a driving protection device, the driving signal generator includes an oscillator and a counter, the driving signal generator controls the on and off of the MOSFET by generating a PWM signal or a dc signal with a certain frequency and a proper duty ratio, the driver includes a transistor and an integrated circuit, and is used for converting the PWM signal or the dc signal into a control signal with a high level and a low level, and controlling the MOSFET to switch between the on and the off by a fast switch, and the driving protection device is used for protecting the MOSFET and the driver from the influence of external factors and avoiding the occurrence of damage or failure.
In a specific embodiment, the driving circuit 9 receives a control signal from a signal source to control the switching process of the MOSFET, when the voltage of the signal source is greater than the gate-source voltage of the MOSFET, the gate 1 of the MOSFET is turned on to generate a drain current to control the on and off of the MOSFET, the driving circuit 9 provides the voltage and current for the MOSFET to ensure that the MOSFET is rapidly turned on and off, and then the output terminal of the driving circuit 9 generates a specific voltage signal and transmits the specific voltage signal to the MOSFET to enable the MOSFET to perform a normal switching process to complete the corresponding task of the circuit system.
While specific embodiments of the present invention have been described above, it will be appreciated by those skilled in the art that these specific embodiments are merely illustrative, and that various omissions, substitutions, and changes in the form and details of the methods and systems described above may be made by those skilled in the art without departing from the spirit and scope of the invention. For example, it is within the scope of the present invention to combine the above-described method steps to perform substantially the same function in substantially the same way to achieve substantially the same result. Accordingly, the scope of the invention is limited only by the following claims.
Claims (7)
1. A MOSFET switching circuit, characterized by: comprising: the device comprises a grid electrode (1), a bottom connection region (2), a source region (3), a silicon substrate (4), a load loop (5), a protection circuit (6), an intelligent control system, a drain junction region (7), a cooling system (8) and a driving circuit (9); wherein:
a gate (1) for switching in an electrical signal to control the current flow in the MOSFET;
a bottom contact area (2) for a grounded area;
a source region (3) for providing a conduit for electrons to enter the MOSFET;
a silicon substrate (4) for providing support, current load sharing and electrical isolation for other devices;
a load loop (5) for transferring power generated by the MOSFET into a load, the load loop (5) comprising a noise reducing inductance and a commutation diode, the noise reducing inductance for removing a circuit noise signal, the noise reducing inductance comprising a noise reducing capacitor, a noise reducing capacitor and a noise reducing capacitor, the noise reducing capacitor comprising a noise reducing capacitor, a noise reducing capacitor and a noise reducing capacitor, the noise reducing capacitor
The converter diode is used for preventing the MOSFET from generating reverse leakage;
a protection circuit (6), the protection circuit (6) is used for ensuring that a circuit or a device is not damaged or broken under bad conditions, the protection circuit (6) comprises a reverse connection protection circuit, an overcurrent protection circuit, a short-circuit protection circuit and an overvoltage protection circuit, the reverse connection protection circuit is used for preventing the circuit from being damaged due to the fact that the reverse connection between the positive electrode and the negative electrode is wrong, the overcurrent protection circuit is used for immediately cutting off the circuit when an excessive current is input into the circuit, the overload and the damage of the device are prevented, the short-circuit protection circuit is used for preventing high current from being generated due to the short circuit of the circuit, and the overvoltage protection circuit is used for protecting a switch circuit from being impacted by voltage and current higher than normal voltage;
the intelligent control system is used for remotely monitoring, diagnosing faults and predicting and maintaining the working state of the MOSFET switching circuit so as to improve the reliability and the working efficiency of the switching circuit;
the drain junction region (7) is used for flowing and controlling current, and the MOSFET controls the resistance of the drain junction region (7) by adjusting the voltage of the grid electrode (1), so that a switching circuit is realized;
a cooling system (8) for reducing the operating temperature of the MOSFET and thus the leakage current;
a drive circuit (9) for controlling the switching behaviour of the MOSFET;
the grid electrode (1) is located between the source region (3) and the drain junction region (7), the silicon substrate (4) is located below the grid electrode (1) and the source region (3), the bottom connection region (2) is grounded, and the load loop (5), the protection circuit (6), the intelligent control system, the cooling system (8) and the driving circuit (9) are connected through electric signals.
2. A MOSFET switching circuit according to claim 1, wherein: the load loop (5) reduces the leakage current amplitude by connecting the converter diode in parallel, the converter diode combines the high-speed switching characteristic of the MOSFET and the low on-resistance and quick recovery characteristic of the Schottky diode, the quick switching is realized through the low on-resistance of the MOSFET in a forward on state, the quick recovery is realized through the low on-resistance of the Schottky diode in a reverse off state, and the occurrence of the leakage current of the switching circuit is effectively reduced.
3. A MOSFET switching circuit according to claim 1, wherein: the protection circuit (6) carries out circuit protection from many aspects to ensure the safe operation of MOSFET and prolong its life, reverse connection protection circuit includes diode and protection baffle, overcurrent protection circuit includes pipe, fuse and self-recovery fuse, short-circuit protection circuit includes current-limiting resistor, platinum power fuse and thermistor, overvoltage protection circuit includes stabiliser, quick response voltage limiter, piezo-resistor and fuse.
4. A MOSFET switching circuit according to claim 1, wherein: the intelligent control system adopts a fault diagnosis algorithm to process and analyze the fault condition of the MOSFET switch circuit, and the fault analysis algorithm is as follows:
firstly, faults occurring in the working process of a MOSFET switching circuit are classified according to types, the influence degree of the faults on the switching circuit is analyzed, the risk of the faults is obtained, and a fault risk function expression is shown as a formula (1):
（1）
in the formula (1), the components are as follows,for the probability of failure risk->Dynamic risk factor for the operation of a MOSFET switching circuit,/->In order to be dimensional in number,ngenerating fault types for the working process of the MOSFET switching circuit;
performing cluster analysis on the fault risk probability, and optimizing a fault risk assessment result to improve the accuracy of fault risk diagnosis, wherein a cluster analysis function is as follows:
（2）
in the formula (2), the amino acid sequence of the compound,representing an activation function->For the post-cluster fault diagnosis data set, +.>And calculating the types of faults encountered in the working process of the MOSFET switching circuit and providing corresponding fault solutions according to the formula (2) for the total number of the fault risk influence class types.
5. A MOSFET switching circuit according to claim 1, wherein: the drain junction region (7) comprises a p-type semiconductor and an n-type semiconductor, a p-type drain junction is formed at a high doping concentration part of the p-type semiconductor, an n-type channel polar plate is formed at a low doping concentration part of the n-type semiconductor, the p-type drain junction and the n-type channel polar plate are separated by a space charge region with high impedance to form a drain junction, the drain junction region (7) is normally conducted under a forward voltage, and current flowing along the drain junction region (7) is drain current of the MOSFET.
6. A MOSFET switching circuit according to claim 1, wherein: the cooling system (8) comprises cooling fins, heat pipes, water cooling and fans, wherein the cooling fins are used for conducting heat out, the heat pipes are used for transferring heat to the other end, the fans are used for discharging heat, the water cooling is used for connecting MOSFET (metal oxide semiconductor field effect transistor) tubes with water, the water cooling is used for absorbing heat of the MOSFET tubes through water flow, and the fans are used for flowing air to reduce the temperature of a switching circuit of the MOSFET tubes.
7. A MOSFET switching circuit according to claim 1, wherein: the driving circuit (9) comprises a driving signal generator, a driver and a driving protection device, wherein the driving signal generator comprises an oscillator and a counter, the on and off of the MOSFET is controlled by generating a PWM signal or a DC signal with a certain frequency and a proper duty ratio, the driver comprises a transistor and an integrated circuit and is used for converting the PWM signal or the DC signal into a control signal with a high level and a low level and converting the PWM signal or the DC signal into the control signal with the high level and the low level through a fast switch, and the driving protection device is used for protecting the MOSFET and the driver from being influenced by external factors and avoiding the damage or the failure.
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| US11353511B1 (en) * | 2021-07-02 | 2022-06-07 | Beta Air, Llc | Methods and systems for electric propulsor fault detection |
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| US20040145924A1 (en) * | 2002-10-29 | 2004-07-29 | Kyung-Oun Jang | Pulse width modulation signal generator and switching mode power supply including the same |
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