CN117039606A - Horizontal cavity surface emitting laser and laser device - Google Patents
Horizontal cavity surface emitting laser and laser device Download PDFInfo
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- CN117039606A CN117039606A CN202311264793.3A CN202311264793A CN117039606A CN 117039606 A CN117039606 A CN 117039606A CN 202311264793 A CN202311264793 A CN 202311264793A CN 117039606 A CN117039606 A CN 117039606A
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- 239000000758 substrate Substances 0.000 claims description 47
- 238000005253 cladding Methods 0.000 claims description 27
- 239000004038 photonic crystal Substances 0.000 claims description 8
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- 238000005265 energy consumption Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 description 27
- 238000010586 diagram Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 4
- 238000004093 laser heating Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
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Abstract
The application relates to a horizontal cavity surface emitting laser and laser equipment. The horizontal cavity surface emitting laser comprises a light emitting direction, the horizontal cavity surface emitting laser comprises a grating layer and a reflecting mirror layer, the grating layer can emit two diffraction beams with opposite light emitting directions along the light emitting direction, the reflecting mirror layer and the grating layer are sequentially arranged along the light emitting direction, and the reflecting mirror layer is used for reflecting at least part of diffraction beams emitted by the grating layer and opposite to the light emitting direction toward the grating layer. The horizontal cavity surface emitting laser is beneficial to improving the luminous power of the horizontal cavity surface emitting laser and reducing the energy consumption of the horizontal cavity surface emitting laser.
Description
Technical Field
The application relates to the technical field of lasers, in particular to a horizontal cavity surface emitting laser and laser equipment.
Background
A Horizontal Cavity Surface Emitting Laser (HCSEL), which is an important member of the family of semiconductor lasers, is similar to the structure of an Edge-emitting laser (Edge-emitting Semiconductor Lasers, EEL), and the surface emitting light perpendicular to the laser oscillation direction is formed in the horizontally resonating laser cavity by a diffraction optical method. HCSEL combines the advantages of a Vertical-Cavity Surface-Emitting Laser (VCSEL) at the wafer level, monolithic chip and easy packaging, and EEL long Cavity length, high power. Meanwhile, compared with VCSEL, the HSCEL has the advantages of excellent beam quality, excellent polarization degree, high signal to noise ratio and the like, and compared with EEL, the HSCEL has the advantages of high power, large output caliber, simple manufacturing process and the like. The HCSEL has the advantages of long cavity length, large gain, low cost, mass production, simple packaging form, small wavelength temperature drift, ultrahigh single tube power, large output caliber, narrow spectral line width, excellent light beam quality, excellent polarization degree, capability of realizing high-quality linear squares in compact packaging size and the like, and is suitable for the fields of 3D sensing, laser radar, TOF, laser heating and the like.
In conventional HCSELs, the grating is typically capable of providing two oppositely directed diffracted beams, however, conventional HCSELs typically can only exit one of the directions of the diffracted beams provided by the grating, resulting in a low light exit efficiency of the HCSEL.
Disclosure of Invention
Based on this, it is necessary to provide a horizontal cavity surface emitting laser and laser device that address the problem of low light extraction efficiency of conventional HCSELs.
The horizontal cavity surface emitting laser comprises a grating layer and a reflecting mirror layer, wherein the grating layer can emit two diffraction beams with opposite emitting directions along the emitting direction, the reflecting mirror layer and the grating layer are sequentially arranged along the emitting direction, and the reflecting mirror layer is used for reflecting at least part of diffraction beams emitted by the grating layer and opposite to the emitting direction toward the grating layer.
Above-mentioned horizontal cavity surface emission laser sets up the speculum layer in the grating layer one side of light-emitting direction dorsad, the speculum layer can be with the diffraction light beam reflection towards the grating layer that the grating layer is emergent at least part and light-emitting direction are opposite for the emergent direction and the light-emitting direction of light beam are unanimous, thereby can be as the emergent light emergence of horizontal cavity surface emission laser, be favorable to the light beam of make full use of grating layer emergence, promote light utilization efficiency, thereby promote the light-emitting efficiency of horizontal cavity surface emission laser, be favorable to promoting the luminous power of horizontal cavity surface emission laser and reduce the energy consumption of horizontal cavity surface emission laser.
In one embodiment, the horizontal cavity surface emitting laser comprises a substrate, an N conductive layer arranged on the substrate, and a P electrode layer arranged on one side of the N conductive layer, which is opposite to the substrate, wherein the grating layer and the reflecting mirror layer are arranged between the substrate and the P electrode layer. The arrangement positions of the grating layer and the reflecting mirror layer have high freedom degree, and can adapt to different manufacturing processes, and the reflecting mirror layer is arranged in the layer structure of the horizontal cavity surface emitting laser, so that the light emitting efficiency is improved, and meanwhile, the size of the horizontal cavity surface emitting laser is also favorably compressed.
In one embodiment, the light emitting direction is directed to the P electrode layer by the grating layer, and the horizontal cavity surface emitting laser further includes a P-type contact layer, a P-type doped cladding layer, a P-type doped light confinement layer, an active layer, an N-type doped light confinement layer, and an N-type doped cladding layer, which are sequentially disposed in a direction in which the P electrode layer is directed to the N conductive layer, and the grating layer is formed by one or more layers of structures adjacent to the P electrode layer in the horizontal cavity surface emitting laser. The grating layer is formed by one or more layers adjacent to the P electrode layer, so that the manufacturing process of the grating layer can be adapted to the manufacturing process of the horizontal cavity surface emitting laser, and the design and manufacturing difficulty of the horizontal cavity surface emitting laser are reduced.
In one embodiment, the mirror layer is disposed between the N-conductive layer and the substrate. By the arrangement, the reflecting mirror layer can be generated on the substrate, which is beneficial to reducing the design and manufacturing difficulty.
In one embodiment, the light emitting direction is directed to the N conductive layer by the grating layer, the horizontal cavity surface emitting laser further includes a P-type contact layer disposed on a side of the P-electrode layer facing the N conductive layer, and the grating layer and the reflector layer are disposed between the P-type contact layer and the N conductive layer. The grating layer and the reflecting mirror layer can be well adapted to the structural design and manufacturing process of the horizontal cavity surface emitting laser, and the setting position has high freedom.
In one embodiment, the horizontal cavity surface emitting laser further includes a P-type doped cladding layer, a P-type doped light confinement layer, an active layer, an N-type doped light confinement layer, and an N-type doped cladding layer sequentially disposed in a direction in which the P-type contact layer points to the N-type conductive layer, and the grating layer is formed by one or more layers of structures of the P-type contact layer facing to one side of the N-type conductive layer and adjacent to the P-type contact layer. The grating layer is formed by one or more layers adjacent to the P-type contact layer, so that the manufacturing process of the grating layer can be adapted to the manufacturing process of the horizontal cavity surface emitting laser, and the design and manufacturing difficulty of the horizontal cavity surface emitting laser are reduced.
In one embodiment, the mirror layer is disposed between the P-doped cladding layer and the P-contact layer. By the arrangement, the reflector layer can grow after the grating layer is etched, and can be well adapted to the manufacturing process of the horizontal cavity surface emitting laser and the grating layer, so that the design and manufacturing difficulty of the horizontal cavity surface emitting laser can be reduced.
In one embodiment, the P electrode layer is disposed at a periphery of the P-type contact layer, or covers a surface of the P-type contact layer facing away from the substrate; and/or the number of the groups of groups,
the horizontal cavity surface emitting laser further comprises an N electrode layer arranged on one side of the substrate, which is opposite to the N conductive layer, wherein the N electrode layer covers the surface of the substrate or is arranged on the periphery of the substrate; and/or the number of the groups of groups,
the N conductive layer and the substrate extend to the outside of the P electrode layer, the horizontal cavity surface emitting laser further comprises an N electrode layer, and the N electrode layer is arranged on one side of the N conductive layer, which is opposite to the substrate, and is arranged on the part of the N conductive layer extending to the outside of the P electrode layer. By the arrangement, the horizontal cavity surface emitting laser device can adapt to front light emitting, back light emitting and different packaging types, and the applicability of the horizontal cavity surface emitting laser device is improved.
In one embodiment, the grating layer is formed by any one or more layers of structures in the horizontal cavity surface emitting laser; and/or the number of the groups of groups,
the reflector layer is arranged between any two layers of structures at one side of the grating layer, which is back to the light emitting direction. The arrangement of the grating layer and the reflecting mirror layer has high degree of freedom, can adapt to the structure and the manufacturing process of the horizontal cavity surface emitting laser, and is beneficial to reducing the design and manufacturing difficulty of the horizontal cavity surface emitting laser.
In one embodiment, the grating layer comprises a second or higher order bragg grating and/or comprises a second or higher order photonic crystal; and/or the number of the groups of groups,
the mirror layer includes a distributed Bragg mirror and/or a photonic crystal structure. The type design of the grating layer and the reflecting mirror layer is beneficial to improving the performance of the horizontal cavity surface emitting laser.
A laser device comprising a horizontal cavity surface emitting laser as claimed in any one of the embodiments above. The horizontal cavity surface emitting laser is adopted in the laser equipment, and the grating layer and the reflecting mirror layer in the horizontal cavity surface emitting laser are matched, so that the luminous power of the laser equipment is improved, and the energy consumption of the laser equipment is reduced.
Drawings
Fig. 1 is a schematic diagram of a horizontal cavity surface emitting laser in some embodiments.
Fig. 2 is a schematic structural diagram of a horizontal cavity surface emitting laser according to another embodiment.
Fig. 3 is a schematic diagram of the optical paths of two diffraction beams with opposite outgoing directions of the grating layer in some embodiments.
Fig. 4 is a schematic structural diagram of a horizontal cavity surface emitting laser in still other embodiments.
Fig. 5 is a schematic structural diagram of a grating layer of a horizontal cavity surface emitting laser according to some embodiments.
Reference numerals:
10. a horizontal cavity surface emitting laser; 101. a substrate; 102. an N conductive layer; 103. an N-type doped cladding layer; 104. an N-type doped optical confinement layer; 105. an active layer; 106. a P-doped optical confinement layer; 107. a P-doped cladding; 108. a P-type contact layer; 109. a grating layer; 110. a mirror layer; 111. a P electrode layer; 112. an N electrode layer; 113. an insulating layer.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.
In the description of the present application, it should be understood that, if any, these terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., are used herein with respect to the orientation or positional relationship shown in the drawings, these terms refer to the orientation or positional relationship for convenience of description and simplicity of description only, and do not indicate or imply that the apparatus or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the application.
Furthermore, the terms "first," "second," and the like, if any, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the terms "plurality" and "a plurality" if any, mean at least two, such as two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly stated and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly. For example, the two parts can be fixedly connected, detachably connected or integrated; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, the meaning of a first feature being "on" or "off" a second feature, and the like, is that the first and second features are either in direct contact or in indirect contact through an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that if an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. If an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein, if any, are for descriptive purposes only and do not represent a unique embodiment.
Referring to fig. 1 and 2, fig. 1 and 2 are schematic structural diagrams of a horizontal cavity surface emitting laser 10 according to various embodiments. The horizontal cavity surface emitting laser 10 provided by the application can emit laser and can be used in the fields of 3D sensing, laser radar, TOF, laser heating and the like. In some embodiments, the horizontal cavity surface emitting laser 10 includes a substrate 101, an N-conductive layer 102, an N-doped cladding layer 103, an N-doped optical confinement layer 104, a quantum well or quantum dot active layer 105, a P-doped optical confinement layer 106, a P-doped cladding layer 107, and a P-contact layer 108, which are disposed in that order. The horizontal cavity surface emitting laser 10 has a light emitting direction (the direction of the dashed arrow shown in fig. 1), the horizontal cavity surface emitting laser 10 is capable of emitting light in the light emitting direction, and the horizontal cavity surface emitting laser 10 includes, but is not limited to, front side light emitting or back side light emitting. Referring to fig. 1, when the horizontal cavity surface emitting laser 10 is a front-side light emitting device, the light emitting direction may be directed from the substrate 101 to the P-type contact layer 108, in other words, the surface of the P-type contact layer 108 facing away from the substrate 101 may be regarded as the light emitting surface of the horizontal cavity surface emitting laser 10. Referring to fig. 2, when the horizontal cavity surface emitting laser 10 is back-side light emitting, the light emitting direction may be directed from the P-type contact layer 108 to the substrate 101, in other words, the surface of the substrate 101 facing away from the P-type contact layer 108 may be regarded as the light emitting surface of the horizontal cavity surface emitting laser 10. The horizontal cavity surface emitting laser 10 may further be provided with a grating layer 109, where the grating layer 109 can emit diffracted light beams in the same direction as the light emission direction, so as to form the light emitted by the horizontal cavity surface emitting laser 10.
As shown in fig. 1 and 3, it should be noted that the grating layer in the conventional horizontal cavity surface emitting laser can generally emit two diffracted beams with opposite directions, wherein one of the diffracted beams emits from the grating layer along the light emitting direction, and then emits from the horizontal cavity surface emitting laser to form the light emitted by the horizontal cavity surface emitting laser. In addition, the emergent direction of the diffracted beam from the grating layer is opposite to the emergent direction, and the diffracted beam with the opposite emergent direction cannot generally form the emergent light of the horizontal cavity surface emitting laser, so that the diffracted beam is wasted, the emergent light efficiency of the horizontal cavity surface emitting laser is reduced, the luminous power of the horizontal cavity surface emitting laser is easily reduced, and the energy consumption of the horizontal cavity surface emitting laser is increased under the condition of the same luminous power.
In order to solve the above-mentioned problems, in some embodiments, the horizontal cavity surface emitting laser 10 further includes a mirror layer 110, where the mirror layer 110 and the grating layer 109 are sequentially disposed along the light emitting direction, and then the mirror layer 110 may be regarded as being disposed on a side of the grating layer 109 facing away from the light emitting direction. The mirror layer 110 is configured to reflect at least part of the diffracted light beams emitted from the grating layer 109 opposite to the light emitting direction toward the grating layer 109, so as to deflect the light beams in the same direction as the light emitting direction, so that the emitted light of the horizontal cavity surface emitting laser 10 can be formed, and further, the two diffracted light beams provided by the grating layer 109 and opposite to each other can be utilized.
The above-mentioned horizontal cavity surface emitting laser 10, set up the reflector layer 110 in the one side of grating layer 109 back towards the light-emitting direction, the reflector layer 110 can be with the diffraction light beam reflection towards grating layer 109 of at least part and the opposite light-emitting direction of grating layer 109 outgoing for the emergence direction and the light-emitting direction of light beam are unanimous, thereby can be as the emergent light outgoing of horizontal cavity surface emitting laser 10, be favorable to the light beam of make full use of grating layer 109 outgoing, promote light utilization efficiency, thereby promote the light-emitting efficiency of horizontal cavity surface emitting laser 10, be favorable to promoting the luminous power of horizontal cavity surface emitting laser 10 and reduce the energy consumption of horizontal cavity surface emitting laser 10.
In some embodiments, the grating layer 109 is etched from any one or more layers of the horizontal cavity surface emitting laser 10, for example, the grating layer 109 may be formed from any one of the P-type contact layer 108 to the N-type doped cladding layer 103, may be formed from three layers of the P-type contact layer 108, the P-type doped cladding layer 107, and the P-type doped light confinement layer 106, or may be formed from two layers of the P-type doped cladding layer 107 and the P-type doped light confinement layer 106, or may be formed from any other adjacent two layers, three layers, or any other number of layers. In some embodiments, the grating layer 109 may be a second or higher order Bragg grating capable of effectively providing two diffracted beams in two opposite directions parallel to the light exit direction. In the present application, the higher order may be understood as a higher order than the second order. In other embodiments, the grating layer 109 may be a second-order or higher-order photonic crystal, as shown in fig. 5, and the grating layer 109 in the embodiments shown in fig. 2 and 4 is not limited to be a bragg grating or a photonic crystal, and of course, the grating layer 109 may also include a bragg grating and a photonic crystal, and the type of the grating layer 109 is not specifically limited in the present application, so long as the grating layer 109 can emit two light beams with opposite directions along the light emitting direction.
In some embodiments, the mirror layer 110 is disposed between any two layers of the grating layer 109 on a side facing away from the light emitting direction, for example, between the N-conductive layer 102 and the substrate 101 or between the P-type contact layer 108 and the P-doped cladding layer 107, although the mirror layer 110 may be disposed between any other two layers of the structure. In some embodiments, the reflector layer 110 may be a distributed bragg reflector or a photonic crystal structure with good reflection performance, the reflector layer 110 may be made of a semiconductor material, and the reflector layer 110 may be formed on any layer of the layer structure by epitaxial growth, which is beneficial to adapting to the manufacturing process of the horizontal cavity surface emitting laser 10, providing good reflection performance, and effectively improving the light extraction efficiency.
In some embodiments, the horizontal cavity surface emitting laser 10 further includes a P-electrode layer 111 and an N-electrode layer 112, the P-electrode layer 111 may be disposed on a side of the P-type contact layer 108 facing away from the substrate 101 and in ohmic contact with the P-type contact layer 108, the N-electrode layer 112 may be electrically connected to the N-conductive layer 102, and the horizontal cavity surface emitting laser 10 may cause the horizontal cavity surface emitting laser 10 to emit light by applying a current to the P-electrode layer 111 and the N-electrode layer 112 such that the current is injected from the P-type contact layer 108 into the horizontal cavity surface emitting laser 10. In some embodiments, when the horizontal cavity surface emitting laser 10 emits light from the front surface, the P-electrode layer 111 may be disposed on the periphery of the P-type contact layer 108 so as not to block the light emitted from the horizontal cavity surface emitting laser 10. The N electrode layer 112 may be disposed on a side of the substrate 101 facing away from the N conductive layer 102 and covers a surface of the substrate 101. Of course, there may be other arrangements of the N electrode layer 112 and the P electrode layer 111 depending on the type of the horizontal cavity surface emitting laser 10. Referring to fig. 4, in some embodiments, the N conductive layer 102 and the substrate 101 partially extend beyond the P electrode layer 111, and the N electrode layer 112 is disposed on a side of the N conductive layer 102 opposite to the substrate 101, and is disposed on a portion of the N conductive layer 102 extending beyond the P electrode layer 111. Referring to fig. 2, in some embodiments, when the horizontal cavity surface emitting laser 10 emits light from the back surface, the P electrode layer 111 may cover the surface of the P type contact layer 108 facing away from the substrate 101, and the N electrode layer 112 may be disposed on the periphery of the surface of the substrate 101 facing away from the P type contact layer 108 so as not to block the light emitted from the horizontal cavity surface emitting laser 10. It will be appreciated that in the embodiment shown in fig. 1 and 2, the substrate 101 is disposed between the N electrode layer 112 and the N conductive layer 102, the substrate 101 may be a doped semiconductor material, and in the embodiment shown in fig. 4, the substrate 101 may be any suitable insulating material or non-insulating material.
In some embodiments, the horizontal cavity surface emitting laser 10 may further include an insulating layer 113, where the insulating layer 113 covers at least a portion of the surface of the horizontal cavity surface emitting laser to provide protection to the horizontal cavity surface emitting laser 10, and the P electrode layer 111 and the N electrode layer 112 may penetrate the insulating layer 113 to electrically connect with the P-type contact layer 108 or the N conductive layer 102.
In some embodiments, the grating layer 109 and the mirror layer 110 may be disposed between the N-conductive layer 102 and the P-electrode layer 111. Further, as shown in fig. 1 and 4, when the light-emitting direction is directed to the P electrode layer 111 by the grating layer 109, that is, the horizontal cavity surface emitting laser 10 emits light from the front surface, the grating layer 109 is formed by one or more layers of structures adjacent to the P electrode layer 111 in the horizontal cavity surface emitting laser 10, for example, by the P-type contact layer 108, or by a combination of three layers of structures of the P-type contact layer 108, the P-type doped cladding layer 107, and the P-type doped light confinement layer 106. The grating layer 109 is formed by one or more layers adjacent to the P electrode layer 111, so that the manufacturing process of the grating layer 109 can be adapted to the manufacturing process of the horizontal cavity surface emitting laser 10, and the design and manufacturing difficulty of the horizontal cavity surface emitting laser 10 can be reduced. In this embodiment, the mirror layer 110 may be disposed between the N conductive layer 102 and the substrate 101, so that the mirror layer 110 can be better generated by using the substrate 101, and the design and manufacturing difficulty of the horizontal cavity surface emitting laser 10 can be reduced.
In the embodiment shown in fig. 1 and fig. 4, the mirror layer 110 may be first prepared on the substrate 101 by epitaxial growth, and the N-type doped cladding layer 103 is grown to a multi-layer structure such as the P-type contact layer 108, then, on the side of the P-type contact layer 108 facing away from the substrate 101, the P-type contact layer 108 or the multi-layer structure such as the P-type contact layer 108, the P-type doped cladding layer 107 and the P-type doped light confinement layer 106 is etched to form the grating layer 109, so as to cover the insulating layer 113, and the insulating layer 113 is etched to expose the N-electrode layer 112 or the P-electrode layer 111, and then, the N-electrode layer 112 and the P-electrode layer 111 are disposed. It can be seen that the structure and the manufacturing process of the mirror layer 110 and the grating layer 109 disposed on the horizontal cavity surface emitting laser 10 can be well adapted, which is beneficial to simplifying the manufacturing process and reducing the design and manufacturing difficulty.
Referring to fig. 2, in some embodiments, when the light emitting direction is directed to the N conductive layer 102 by the grating layer 109, that is, the horizontal cavity surface emitting laser 10 emits light from the back, the grating layer 109 and the mirror layer 110 are disposed between the P-type contact layer 108 and the N conductive layer 102, and the arrangement of the grating layer 109 and the mirror layer 110 has a high degree of freedom and does not affect the contact conduction between the P-type contact layer 108 and the P electrode layer 111, so that current can be smoothly injected into the horizontal cavity surface emitting laser 10. Further, in some embodiments, the grating layer 109 is formed by one or more layer structures of the P-type contact layer 108 facing the side of the N-conductive layer 102 and adjacent to the P-type contact layer 108, e.g., the grating layer 109 is formed by the P-type doped cladding layer 107, or by the P-type doped cladding layer 107 and the P-type doped light confinement layer 106 together. In this embodiment, the mirror layer 110 may be disposed between the P-doped cladding layer 107 and the P-contact layer 108. By the arrangement, the arrangement of the grating layer 109 and the reflecting mirror layer 110 can be well adapted to the structure and the arrangement process of the horizontal cavity surface emitting laser 10, which is beneficial to simplifying the preparation process and reducing the design and manufacturing difficulty of the horizontal cavity surface emitting laser 10.
In the embodiment shown in fig. 2, the multi-layer structure of the N conductive layer 102 to the P doped cladding layer 107 may be prepared by epitaxial growth on the substrate 101, then the P doped cladding layer 107 or the P doped cladding layer 107 and the P doped light confinement layer 106 are etched to form a grating on a layer of the P doped cladding layer 107 facing away from the substrate 101, then the mirror layer 110 and the P contact layer 108 are prepared by epitaxial growth on a side of the P doped cladding layer 107 facing away from the substrate 101, and then the insulating layer 113 is provided, and then the P electrode layer 111 and the N electrode layer 112 are provided. It can be seen that the structure and the manufacturing process of the mirror layer 110 and the grating layer 109 disposed on the horizontal cavity surface emitting laser 10 can be well adapted, which is beneficial to simplifying the manufacturing process and reducing the design and manufacturing difficulty.
In some embodiments, the projection of the mirror onto the grating layer 109 along the light exit direction covers the grating layer 109, e.g., the mirror layer 110 has a dimension in a direction perpendicular to the light exit direction that is greater than or equal to the grating layer 109, in the embodiments shown in fig. 1 and 2, the mirror layer 110 may overlap the grating layer 109, and in the embodiment shown in fig. 4, the mirror layer 110 may overlap the N-conductive layer 102 and has a dimension that is greater than the grating layer 109. By the arrangement, the emergent light of the horizontal cavity surface emitting laser 10 can be formed by reflecting light rays to the greatest extent, and the emergent light efficiency of the horizontal cavity surface emitting laser 10 is improved.
The application also provides a laser device, which comprises a shell and the horizontal cavity surface emitting laser 10 according to any embodiment, wherein the horizontal cavity surface emitting laser 10 is arranged in the shell, the shell can be provided with a light outlet, and laser emitted by the horizontal cavity surface emitting laser 10 can be emitted from the light outlet. According to different requirements of light-emitting power, different numbers of horizontal cavity surface emitting lasers 10 can be arranged in the laser device, for example, a plurality of horizontal cavity surface emitting lasers 10 arranged in an array can be arranged. The laser device can be used in the fields of 3D sensing, laser radar, TOF, laser heating and the like, and the laser device comprises any applicable device such as a laser sensor, a laser radar, a three-dimensional laser projection device, a laser heating device and the like. The horizontal cavity surface emitting laser 10 is adopted in the laser device, and the grating layer 109 and the reflecting mirror layer 110 in the horizontal cavity surface emitting laser 10 are matched, so that the luminous power of the laser device is improved, and the energy consumption of the laser device is reduced.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (11)
1. The horizontal cavity surface emitting laser is characterized by comprising a light emitting direction, wherein the horizontal cavity surface emitting laser comprises a grating layer and a reflecting mirror layer, the grating layer can emit two diffraction beams with opposite light emitting directions along the light emitting direction, the reflecting mirror layer and the grating layer are sequentially arranged along the light emitting direction, and the reflecting mirror layer is used for reflecting at least part of diffraction beams emitted by the grating layer and opposite light emitting directions towards the grating layer.
2. The horizontal cavity surface emitting laser of claim 1, comprising a substrate, an N-conductive layer disposed on the substrate, and a P-electrode layer disposed on a side of the N-conductive layer facing away from the substrate, the grating layer and the mirror layer being disposed between the substrate and the P-electrode layer.
3. The horizontal cavity surface emitting laser according to claim 2, wherein the light emitting direction is directed to the P electrode layer by the grating layer, the horizontal cavity surface emitting laser further comprising a P-type contact layer, a P-type doped clad layer, a P-type doped light confinement layer, an active layer, an N-type doped light confinement layer, and an N-type doped clad layer sequentially arranged in a direction in which the P electrode layer is directed to the N conductive layer, the grating layer being formed by one or more layer structures adjacent to the P electrode layer in the horizontal cavity surface emitting laser.
4. The horizontal cavity surface emitting laser of claim 3, wherein the mirror layer is disposed between the N-conducting layer and the substrate.
5. The horizontal cavity surface emitting laser of claim 2, wherein the light emitting direction is directed from the grating layer to the N conductive layer, the horizontal cavity surface emitting laser further comprising a P-type contact layer disposed on a side of the P-electrode layer facing the N conductive layer, the grating layer and the mirror layer being disposed between the P-type contact layer and the N conductive layer.
6. The horizontal cavity surface emitting laser of claim 5, further comprising a P-type doped cladding layer, a P-type doped light confinement layer, an active layer, an N-type doped light confinement layer, and an N-type doped cladding layer disposed in that order in a direction in which the P-type contact layer is directed toward the N-conductive layer, wherein the grating layer is formed of one or more layer structures of the P-type contact layer toward a side of the N-conductive layer and adjacent to the P-type contact layer.
7. The horizontal cavity surface emitting laser of claim 6, wherein the mirror layer is disposed between the P-doped cladding layer and the P-contact layer.
8. The horizontal cavity surface emitting laser according to any one of claims 3 to 7, wherein the P-electrode layer is provided at a periphery of the P-type contact layer or covers a surface of the P-type contact layer facing away from the substrate; and/or the number of the groups of groups,
the horizontal cavity surface emitting laser further comprises an N electrode layer arranged on one side of the substrate, which is opposite to the N conductive layer, wherein the N electrode layer covers the surface of the substrate or is arranged on the periphery of the substrate; and/or the number of the groups of groups,
the N conductive layer and the substrate extend to the outside of the P electrode layer, the horizontal cavity surface emitting laser further comprises an N electrode layer, and the N electrode layer is arranged on one side of the N conductive layer, which is opposite to the substrate, and is arranged on the part of the N conductive layer extending to the outside of the P electrode layer.
9. The horizontal cavity surface emitting laser according to any one of claims 1 to 7, wherein the grating layer is formed by any one or more layer structures in the horizontal cavity surface emitting laser; and/or the number of the groups of groups,
the reflector layer is arranged between any two layers of structures at one side of the grating layer, which is back to the light emitting direction.
10. The horizontal cavity surface emitting laser according to any of claims 1-7, wherein the grating layer comprises a second or higher order grating and/or comprises a second or higher order photonic crystal; and/or the number of the groups of groups,
the mirror layer includes a distributed Bragg mirror and/or a photonic crystal structure.
11. A laser device comprising a horizontal cavity surface emitting laser according to any of claims 1-10.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311264793.3A CN117039606A (en) | 2023-09-28 | 2023-09-28 | Horizontal cavity surface emitting laser and laser device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311264793.3A CN117039606A (en) | 2023-09-28 | 2023-09-28 | Horizontal cavity surface emitting laser and laser device |
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|---|---|---|---|---|
| US6560259B1 (en) * | 2000-05-31 | 2003-05-06 | Applied Optoelectronics, Inc. | Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity |
| US20120063481A1 (en) * | 2010-09-14 | 2012-03-15 | Canon Kabushiki Kaisha | Photonic-crystal surface emitting laser, laser array using the laser, and image forming apparatus using the laser array |
| US20160064894A1 (en) * | 2013-04-26 | 2016-03-03 | Hamamatsu Photonics K.K. | Semiconductor laser device |
| CN115882339A (en) * | 2021-09-29 | 2023-03-31 | 全新光电科技股份有限公司 | Semiconductor laser diode comprising multiple active layers and grating layers |
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2023
- 2023-09-28 CN CN202311264793.3A patent/CN117039606A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6560259B1 (en) * | 2000-05-31 | 2003-05-06 | Applied Optoelectronics, Inc. | Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity |
| US20120063481A1 (en) * | 2010-09-14 | 2012-03-15 | Canon Kabushiki Kaisha | Photonic-crystal surface emitting laser, laser array using the laser, and image forming apparatus using the laser array |
| US20160064894A1 (en) * | 2013-04-26 | 2016-03-03 | Hamamatsu Photonics K.K. | Semiconductor laser device |
| CN115882339A (en) * | 2021-09-29 | 2023-03-31 | 全新光电科技股份有限公司 | Semiconductor laser diode comprising multiple active layers and grating layers |
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