CN117038759B - Crystalline silicon solar cell with carbon black conductive film as hole transport layer - Google Patents
Crystalline silicon solar cell with carbon black conductive film as hole transport layer Download PDFInfo
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- CN117038759B CN117038759B CN202311234040.8A CN202311234040A CN117038759B CN 117038759 B CN117038759 B CN 117038759B CN 202311234040 A CN202311234040 A CN 202311234040A CN 117038759 B CN117038759 B CN 117038759B
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- 239000006229 carbon black Substances 0.000 title claims abstract description 52
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 43
- 230000005525 hole transport Effects 0.000 title claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical compound OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims abstract description 18
- 239000004332 silver Substances 0.000 claims abstract description 18
- 238000007639 printing Methods 0.000 claims abstract description 14
- -1 sulfonic acid group compound Chemical class 0.000 claims abstract description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 9
- 239000011574 phosphorus Substances 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 239000006185 dispersion Substances 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 125000005463 sulfonylimide group Chemical group 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000010345 tape casting Methods 0.000 claims description 2
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 abstract description 12
- 230000006798 recombination Effects 0.000 abstract description 7
- 238000005215 recombination Methods 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 6
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 27
- 238000010008 shearing Methods 0.000 description 12
- 239000005360 phosphosilicate glass Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000007650 screen-printing Methods 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L2031/0344—Organic materials
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Abstract
The invention relates to the technical field of crystalline silicon solar cells, and provides a crystalline silicon solar cell with a carbon black conductive film as a hole transport layer. Wherein the hole transport layer comprises carbon black and a sulfonic acid group compound; the sulfonic acid group compound comprises one or more of bis (trifluoromethanesulfonyl) imide, perfluorosulfonic acid and PS-b-PERB; the preparation method of the crystalline silicon solar cell taking the carbon black conductive film as the hole transport layer comprises the following steps: a1, performing phosphorus diffusion and knot making on the silicon wafer subjected to texturing; a2, depositing a silicon oxide and silicon nitride laminated film on the front surface of the silicon wafer after the junction is manufactured, and printing silver paste; and A3, preparing a carbon black conductive film on the back of the silicon wafer after the junction is formed, and printing silver paste on the carbon black conductive film to obtain the crystalline silicon solar cell. By the technical scheme, the problems that the hole transporting layer in the related technology is poor in hole transporting capability and electron blocking capability and serious in carrier recombination are solved.
Description
Technical Field
The invention relates to the technical field of crystalline silicon solar cells, in particular to a crystalline silicon solar cell taking a carbon black conductive film as a hole transport layer.
Background
The solar battery is equipment for converting solar energy into electric energy, has the advantages of environmental protection, reproducibility and the like, and is widely applied to the field of energy at present. The crystalline silicon solar cell has the advantages of high stability, high conversion efficiency (26.81%), long service life and the like, and is the most widely applied solar cell at present.
The hole transport layer is an indispensable structure in crystalline silicon solar cells. The hole transport layer needs to have not only a good hole transport ability but also an electron blocking ability. In addition, since interface recombination is a major factor affecting carrier collection in crystalline silicon solar cells, the hole transport layer also needs less carrier recombination to improve the efficiency of the device. However, the hole transport layer of the current silicon crystal solar cell has poor hole transport capability and electron blocking capability, and serious carrier recombination, so that the photoelectric conversion efficiency of the solar cell is limited.
Disclosure of Invention
The invention provides a crystalline silicon solar cell taking a carbon black conductive film as a hole transport layer, which solves the problems of poor hole transport capability and electron blocking capability of the hole transport layer and serious carrier recombination in the related technology.
The technical scheme of the invention is as follows:
a hole transport layer comprising a carbon black conductive film comprising carbon black and a sulfonic acid-based compound;
the sulfonic acid group compound comprises one or more of bis (trifluoromethanesulfonyl) imide, perfluorosulfonic acid and PS-b-PERB.
CAS number of bis-trifluoromethanesulfonyl imide: 82113-65-3.
CAS number for PS-b-PERB: 66070-58-4.
As a further technical scheme, the mass ratio of the carbon black to the sulfonic acid group compound is 0.5-20:1.
As a further technical scheme, the sulfonic acid group compound consists of bistrifluoromethane sulfonyl imide, perfluorosulfonic acid and PS-b-PERB in a mass ratio of 1:3:1-3:1:1.
As a further technical scheme, the sulfonic acid group compound consists of bistrifluoromethane sulfonyl imide, perfluorosulfonic acid and PS-b-PERB in a mass ratio of 2:2:1.
As a further technical scheme, the preparation method of the carbon black conductive film comprises the following steps:
s1, mixing carbon black, a sulfonic acid group compound and a solvent to obtain a dispersion liquid;
s2, coating the dispersion liquid on a silicon wafer to obtain the carbon black conductive film.
As a further technical scheme, the mixing in the step S1 is performed in a high-pressure homogenizer or a shear disperser.
As a further technical scheme, the solvent in the S1 comprises one or more of methanol, ethanol and acetone.
As a further technical scheme, the using amount of the solvent in the S1 is 0.9-6 times of the mass of the sulfonic acid group compound.
As a further technical scheme, the S2 coating adopts one or more of spin coating, knife coating and spray coating.
The invention also provides a crystalline silicon solar cell which comprises the hole transport layer.
The invention also provides a preparation method of the crystalline silicon solar cell, which comprises the following steps:
a1, performing phosphorus diffusion and knot making on the silicon wafer subjected to texturing;
a2, depositing a silicon oxide and silicon nitride laminated film on the front surface of the silicon wafer after the junction is manufactured, and printing silver paste;
a3, forming the carbon black conductive film on the back of the silicon wafer after the junction is formed, and printing silver paste on the carbon black conductive film to obtain the crystalline silicon solar cell.
As a further technical scheme, a plasma enhanced chemical vapor deposition method is adopted when the silicon oxide and silicon nitride laminated film is deposited in the A2.
As a further technical scheme, the thickness of the silicon oxide in the A2 is 1-3 nm, and the thickness of the silicon nitride is 60-120 nm.
As a further technical scheme, the thickness of the carbon black conductive film in the A3 is 150-2500 nm.
As a further technical scheme, the temperature of the silver paste printed in the A2 is 800-900 ℃;
The temperature of the silver paste printed in the A3 is 20-30 ℃.
The working principle and the beneficial effects of the invention are as follows:
1. The invention provides a crystalline silicon solar cell taking a carbon black conductive film as a hole transmission layer, because the edges of grapheme forming the carbon black are provided with groups such as-OH, -H, -COOH and the like, the carbon black in the air is represented as a p-type semiconductor, and meanwhile, a sulfonic acid group compound has strong electrophilicity and acidity and can functionalize the edges or defect positions of the grapheme forming the carbon black, so that holes are better selectively transmitted, electrons are blocked, interface recombination is reduced, and the crystalline silicon solar cell with higher efficiency is obtained. In addition, the crystalline silicon solar cell taking the carbon black conductive film as the hole transmission layer completely eliminates metal-semiconductor contact, can passivate silicon interface dangling bonds, achieves the effects of reducing interface recombination and improving cell performance, and meanwhile, the preparation method is simple, can be used for large-area preparation and is applied to commercial production.
2. According to the invention, the sulfonic acid group compound composed of bis (trifluoromethanesulfonyl) imide, perfluorosulfonic acid and PS-b-PERB with the mass ratio of 1:3:1-3:1:1 is used, so that the efficiency of the crystalline silicon solar cell is further improved.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The ethanol in the following examples and comparative examples is absolute ethanol, and the HNO 3 solution is prepared by mixing nitric acid, hydrofluoric acid and water according to the volume ratio of 4:1:2; the volume concentration of the HF solution was 10%.
Example 1
S1, mixing 10g of carbon black, 1g of PS-b-PERB and 4g of ethanol in a 25000rpm shearing and dispersing machine for 3 hours to obtain a dispersion liquid for later use;
S2, constructing the front and back areas of the cleaned silicon wafer into pyramid suede structures by using a KOH aqueous solution with the concentration of 10mg/mL, forming a layer of phosphosilicate glass (PSG) and a heavily doped n-type silicon layer on the surface of the silicon wafer after performing phosphorus doping and phosphorus diffusion on the textured silicon wafer to form an n+ emission junction, oxidizing by using a HNO 3 solution, and removing the PSG layer and the n-type silicon layer on the back and the edge by using an HF solution;
S3, depositing a 2nm silicon oxide and 100nm silicon nitride laminated film on the front surface of the silicon wafer after the junction is manufactured by adopting a plasma enhanced chemical vapor deposition method, and printing silver paste at 850 ℃ by adopting a screen printing process;
and S4, preparing a 1000nm hole transport layer by scraping and coating dispersion liquid on the back of the silicon wafer after the preparation, and printing silver paste on the hole transport layer at 25 ℃ by adopting a screen printing process to obtain the crystalline silicon solar cell taking the carbon black conductive film as the hole transport layer.
Example 2
S1, mixing 10g of carbon black, 1g of bistrifluoromethane sulfonyl imide and 4g of ethanol in a 25000rpm shearing and dispersing machine for 3 hours to obtain a dispersion liquid for later use;
s2, S3, S4 are the same as in example 1.
Example 3
S1, mixing 10g of carbon black, 1g of perfluorosulfonic acid and 4g of ethanol in a 25000rpm shearing and dispersing machine for 3 hours to obtain a dispersion liquid for later use;
s2, S3, S4 are the same as in example 1.
Example 4
S1, mixing 10g of carbon black, 0.8g of bistrifluoromethane sulfonyl imide, 0.2g of perfluorosulfonic acid and 4g of ethanol in a 25000rpm shearing and dispersing machine for 3 hours to obtain a dispersion liquid for later use;
s2, S3, S4 are the same as in example 1.
Example 5
S1, mixing 10g of carbon black, 0.8g of bis (trifluoromethanesulfonyl) imide, 0.2g of PS-b-PERB and 4g of ethanol in a 25000rpm shearing and dispersing machine for 3 hours to obtain a dispersion liquid for later use;
s2, S3, S4 are the same as in example 1.
Example 6
S1, mixing 10g of carbon black, 0.8g of perfluorosulfonic acid, 0.2g of PS-b-PERB and 4g of ethanol in a 25000rpm shearing and dispersing machine for 3 hours to obtain a dispersion liquid for later use;
s2, S3, S4 are the same as in example 1.
Example 7
S1, mixing 10g of carbon black, 0.2g of bistrifluoromethane sulfonyl imide, 0.6g of perfluorosulfonic acid, 0.2g of PS-b-PERB and 4g of ethanol in a 25000rpm shearing and dispersing machine for 3 hours to obtain a dispersion liquid for later use;
s2, S3, S4 are the same as in example 1.
Example 8
S1, mixing 10g of carbon black, 0.4g of bistrifluoromethane sulfonyl imide, 0.4g of perfluorosulfonic acid, 0.2g of PS-b-PERB and 4g of ethanol in a 25000rpm shearing and dispersing machine for 3 hours to obtain a dispersion liquid for later use;
s2, S3, S4 are the same as in example 1.
Example 9
S1, mixing 10g of carbon black, 0.6g of bistrifluoromethane sulfonyl imide, 0.2g of perfluorosulfonic acid, 0.2g of PS-b-PERB and 4g of ethanol in a 25000rpm shearing and dispersing machine for 3 hours to obtain a dispersion liquid for later use;
s2, S3, S4 are the same as in example 1.
Example 10
S1, S2, S3 are the same as in example 8;
and S4, preparing a 600nm hole transport layer from the prepared silicon wafer back scratch dispersion liquid, and printing silver paste on the hole transport layer at 25 ℃ by adopting a screen printing process to obtain the crystalline silicon solar cell taking the carbon black conductive film as the hole transport layer.
Example 11
S1, S2, S3 are the same as in example 8;
and S4, preparing a 2000nm hole transport layer from the prepared dispersion liquid on the back of the silicon wafer, and printing silver paste on the hole transport layer at 25 ℃ by adopting a screen printing process to obtain the crystalline silicon solar cell taking the carbon black conductive film as the hole transport layer.
Example 12
S1, mixing 5g of carbon black, 0.4g of bistrifluoromethane sulfonyl imide, 0.4g of perfluorosulfonic acid, 0.2g of PS-b-PERB and 4g of ethanol in a 25000rpm shearing and dispersing machine for 3 hours to obtain a dispersion liquid for later use;
S2, S3, S4 are the same as in example 8.
Example 13
S1, mixing 15g of carbon black, 0.4g of bistrifluoromethane sulfonyl imide, 0.4g of perfluorosulfonic acid, 0.2g of PS-b-PERB and 4g of ethanol in a 25000rpm shearing and dispersing machine for 3 hours to obtain a dispersion liquid for later use;
S2, S3, S4 are the same as in example 8.
Example 14
S1, mixing 0.5g of carbon black, 1g of PS-b-PERB and 0.9g of methanol in a high-pressure homogenizer at 1000bar for 3 hours to obtain a dispersion liquid for later use;
S2, constructing the front and back areas of the cleaned silicon wafer into pyramid suede structures by using a KOH aqueous solution with the concentration of 10mg/mL, forming a layer of phosphosilicate glass (PSG) and a heavily doped n-type silicon layer on the surface of the silicon wafer after performing phosphorus doping and phosphorus diffusion on the textured silicon wafer to form an n+ emission junction, oxidizing by using a HNO 3 solution, and removing the PSG layer and the n-type silicon layer on the back and the edge by using an HF solution;
S3, depositing a 1nm silicon oxide and 60nm silicon nitride laminated film on the front surface of the silicon wafer after the junction is manufactured by adopting a plasma enhanced chemical vapor deposition method, and printing silver paste at 800 ℃ by adopting a screen printing process;
and S4, preparing a 150nm hole transport layer from the prepared silicon wafer back scratch dispersion liquid, and printing silver paste on the hole transport layer at 20 ℃ by adopting a screen printing process to obtain the crystalline silicon solar cell taking the carbon black conductive film as the hole transport layer.
Example 15
S1, mixing 20g of carbon black, 1g of PS-b-PERB and 6g of acetone in a 25000rpm shearing and dispersing machine for 3 hours to obtain a dispersion liquid for later use;
S2, constructing the front and back areas of the cleaned silicon wafer into pyramid suede structures by using a KOH aqueous solution with the concentration of 10mg/mL, forming a layer of phosphosilicate glass (PSG) and a heavily doped n-type silicon layer on the surface of the silicon wafer after performing phosphorus doping and phosphorus diffusion on the textured silicon wafer to form an n+ emission junction, oxidizing by using a HNO 3 solution, and removing the PSG layer and the n-type silicon layer on the back and the edge by using an HF solution;
S3, depositing a 3nm silicon oxide and 120nm silicon nitride laminated film on the front surface of the silicon wafer after the junction is manufactured by adopting a plasma enhanced chemical vapor deposition method, and printing silver paste at 900 ℃ by adopting a screen printing process;
s4, preparing a 2500nm hole transport layer from the prepared silicon wafer back scratch dispersion liquid, and printing silver paste on the hole transport layer at 30 ℃ by adopting a screen printing process to obtain the crystalline silicon solar cell taking the carbon black conductive film as the hole transport layer.
The crystalline silicon solar cells obtained in examples 1 to 15 were subjected to a photoelectric performance test under the condition of AM1.5, and the test results are recorded in table 1.
Table 1 various performance parameters of crystalline silicon solar cells
As can be seen from table 1, the open circuit voltage (V oc) of the crystalline silicon solar cell using the carbon black conductive film as the hole transport layer provided by the invention is over 634.1mV, the short circuit current density (J sc) is over 38.40mA/cm 2, the Fill Factor (FF) is over 59.05%, and the efficiency (PCE) is over 15.05%.
In example 1, compared with examples 2 to 3, the PS-b-PERB used in example 1, the bistrifluoromethane sulfonimide used in example 2, the perfluorosulfonic acid used in example 3, and the crystalline silicon solar cell obtained in example 1 were lower in efficiency than examples 2 to 3, indicating that the performance of the crystalline silicon solar cell obtained with bistrifluoromethane sulfonimide or perfluorosulfonic acid was better than that with PS-b-PERB.
In example 6, compared with examples 4 to 5, the performance of the crystalline silicon solar cell obtained in example 6 was better than that of the crystalline silicon solar cell obtained in examples 4 to 5, which means that the performance of the crystalline silicon solar cell obtained in examples 4 to 5 was better than that obtained in examples 4 to 5, which means that the crystalline silicon solar cell obtained in examples 4 was better than that obtained in examples using bistrifluoromethanesulfonimide and perfluorosulfonic acid, bistrifluoromethanesulfonimide and PS-b-PERB.
Examples 7 to 9 compared with examples 4 to 6, the efficiency of the crystalline silicon solar cell prepared in examples 7 to 9 was higher than that of examples 4 to 6, indicating that the crystalline silicon solar cell obtained when the three of bistrifluoromethane sulfonimide, perfluorosulfonic acid and PS-b-PERB were used in combination, the bistrifluoromethane sulfonimide and perfluorosulfonic acid used in example 4, the bistrifluoromethane sulfonimide and PS-b-PERB used in example 5, the perfluorosulfonic acid and PS-b-PERB used in example 6, and the crystalline silicon solar cell prepared in examples 7 to 9 was the best.
The crystalline silicon solar cell obtained in example 6 was left in the air for 14 days, and the cell efficiencies were measured for 2 days, 8 days, and 14 days, respectively, and the measurement results are recorded in table 2.
Table 2 stability parameters of cell performance in air
As can be seen from table 2, the crystalline silicon solar cell provided in example 6 of the present invention, in which the carbon black conductive film was used as the hole transport layer, had good stability in air.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.
Claims (9)
1. A hole transport layer comprising a carbon black conductive film comprising carbon black and a sulfonic acid-based compound;
The sulfonic acid group compound consists of bistrifluoromethane sulfonyl imide, perfluorosulfonic acid and PS-b-PERB in a mass ratio of 1:3:1-3:1:1.
2. The hole transport layer of claim 1, wherein the mass ratio of carbon black to sulfonic acid compound is 0.5-20:1.
3. The hole transport layer according to claim 1, wherein the method for preparing the carbon black conductive film comprises the steps of:
s1, mixing carbon black, a sulfonic acid group compound and a solvent to obtain a dispersion liquid;
s2, coating the dispersion liquid on a silicon wafer to obtain the carbon black conductive film.
4. A hole transport layer according to claim 3, wherein the coating in S2 is one or more of spin coating, knife coating, and spray coating.
5. A crystalline silicon solar cell comprising the hole transport layer of any one of claims 1 to 4.
6. The method for manufacturing a crystalline silicon solar cell according to claim 5, comprising the steps of:
a1, performing phosphorus diffusion and knot making on the silicon wafer subjected to texturing;
a2, depositing a silicon oxide and silicon nitride laminated film on the front surface of the silicon wafer after the junction is manufactured, and printing silver paste;
a3, forming the carbon black conductive film on the back of the silicon wafer after the junction is formed, and printing silver paste on the carbon black conductive film to obtain the crystalline silicon solar cell.
7. The method of claim 6, wherein the A2 deposited silicon oxide and silicon nitride stacked film is formed by a plasma enhanced chemical vapor deposition method.
8. The method for manufacturing a crystalline silicon solar cell according to claim 6, wherein the thickness of the carbon black conductive film in the A3 is 150-2500 nm.
9. The method for manufacturing a crystalline silicon solar cell according to claim 6, wherein the temperature of the silver paste printed in the A2 is 800-900 ℃;
The temperature of the silver paste printed in the A3 is 20-30 ℃.
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| CN101728082A (en) * | 2009-11-20 | 2010-06-09 | 大连工业大学 | Method for preparing composite electrode of flexible dye-sensitized solar cell |
| JP2013187090A (en) * | 2012-03-08 | 2013-09-19 | Konica Minolta Inc | Transparent conductive film and organic electroluminescent element |
| CN208444863U (en) * | 2018-08-30 | 2019-01-29 | 领旺（上海）光伏科技有限公司 | A kind of flexible back contacts perovskite solar cell suitable for mixed connection component |
| CN114622234A (en) * | 2020-12-10 | 2022-06-14 | 中国科学院大连化学物理研究所 | Flexible gas diffusion electrode structure and application thereof in electrochemical reduction of carbon dioxide |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101728082A (en) * | 2009-11-20 | 2010-06-09 | 大连工业大学 | Method for preparing composite electrode of flexible dye-sensitized solar cell |
| JP2013187090A (en) * | 2012-03-08 | 2013-09-19 | Konica Minolta Inc | Transparent conductive film and organic electroluminescent element |
| CN208444863U (en) * | 2018-08-30 | 2019-01-29 | 领旺（上海）光伏科技有限公司 | A kind of flexible back contacts perovskite solar cell suitable for mixed connection component |
| CN114622234A (en) * | 2020-12-10 | 2022-06-14 | 中国科学院大连化学物理研究所 | Flexible gas diffusion electrode structure and application thereof in electrochemical reduction of carbon dioxide |
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