CN117038720B - Dual Zener well SCR device, manufacturing process and stacking structure thereof - Google Patents
Dual Zener well SCR device, manufacturing process and stacking structure thereof Download PDFInfo
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- 230000009977 dual effect Effects 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000002347 injection Methods 0.000 claims abstract description 94
- 239000007924 injection Substances 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000010410 layer Substances 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000007943 implant Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 15
- 238000002513 implantation Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 230000004913 activation Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
- H01L29/66371—Thyristors structurally associated with another device, e.g. built-in diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
- H01L29/66393—Lateral or planar thyristors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
Abstract
The invention provides a double zener well SCR device, comprising: a P substrate, and an Nwell region above the P substrate; a Pwell region positioned on the right side of the Nwell region and tangential to the Nwell region; the junction depth of the ZNwell region is larger than that of the Nwell region; the junction depth is larger than that of the ZPwell region in the Pwell region; the anode P+ injection region is positioned on the inner surface of the Nwell region, and the right side of the anode P+ injection region is a certain distance away from the ZNwell region; an anode N+ injection region positioned on the inner surface of the Nwell region, and the right side of the anode N+ injection region is tangential to the left side of the anode P+ injection region; the cathode N+ injection region is positioned on the inner surface of the Pwell region, and the left side of the cathode N+ injection region is a certain distance away from the ZPwell region; the cathode P+ injection region is positioned on the inner surface of the Pwell region, and the left side of the cathode P+ injection region is tangential to the right side of the cathode N+ injection region; the SCR device can improve the maintenance voltage, so that latch-up effect is avoided.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a double-Zener well SCR device, a double-Zener well SCR process and a double-Zener well SCR stacking structure.
Background
The existing SCR basic structure of the SCR is shown in figure 1, and comprises a P substrate 01 and an Nwell region 02 positioned above the P substrate 01; a Pwell region 03 positioned on the right side of the Nwell region 02 and tangential to the Nwell region 02; an anode p+ injection region 12 located on the inner surface of Nwell region 02; an anode n+ injection region 11 located on the inner surface of the Nwell region 02 and having the right side tangential to the left side of the anode p+ injection region 12; a cathode n+ injection region 13 located on the inner surface of the Pwell region 03; a cathode P+ injection region 14 positioned on the inner surface of the Pwell region 03 and having the left side tangent to the right side of the cathode N+ injection region 13; compared with the traditional SCR, the low trigger voltage SCR (LVTSCR) performs N+ injection at the junction of the Nwell region 02 and the Pwell region 03 to form an intermediate N+ injection region so as to reduce the trigger voltage by reducing the breakdown voltage, and the zener SCR realizes lower voltage by injecting a ZP region at the edge of the intermediate N+ injection region; however, low voltage SCR still has a strong flyback (snapback) phenomenon after triggering and thus still cannot be used due to the high latch-up risk.
Disclosure of Invention
In order to solve at least one technical problem in the prior art, embodiments of the present invention provide a dual zener well SCR device, a manufacturing process and a stacked structure thereof, so as to reduce latch-up risk, improve the maintenance voltage of the SCR device, and simultaneously maintain a lower trigger voltage. In order to achieve the technical purpose, the technical scheme adopted by the embodiment of the invention is as follows:
in a first aspect, an embodiment of the present invention provides a dual zener well SCR device, including: a P substrate, and an Nwell region above the P substrate; a Pwell region positioned on the right side of the Nwell region and tangential to the Nwell region; the junction depth of the ZNwell region is larger than that of the Nwell region; the junction depth is larger than that of the ZPwell region in the Pwell region; the anode P+ injection region is positioned on the inner surface of the Nwell region, and the right side of the anode P+ injection region is a certain distance away from the ZNwell region; an anode N+ injection region positioned on the inner surface of the Nwell region, and the right side of the anode N+ injection region is tangential to the left side of the anode P+ injection region; the cathode N+ injection region is positioned on the inner surface of the Pwell region, and the left side of the cathode N+ injection region is a certain distance away from the ZPwell region; the cathode P+ injection region is positioned on the inner surface of the Pwell region, and the left side of the cathode P+ injection region is tangential to the right side of the cathode N+ injection region; a field oxide layer located over the entire substrate surface; shorting the anode N+ injection region and the anode P+ injection region to anode metal above the field oxide layer; and shorting the cathode N+ injection region and the cathode P+ injection region to form cathode metal above the field oxide layer.
Further, the doping concentration of the ZNwell region and the ZPwell region are the same.
Further, the doping concentrations of the ZNwell region and ZPwell region are higher than the doping concentrations of the Nwell region and Pwell region, respectively.
Further, the doping concentrations of the ZNwell region and ZPwell region are tens to one hundred times the doping concentrations of the Nwell region and Pwell region, respectively.
In a second aspect, an embodiment of the present invention provides a process for manufacturing a dual zener well SCR device, including the following steps:
step S10, providing a P substrate;
step S20, sequentially injecting impurities with corresponding doses on the surface of the P substrate through an ion injection process to form an Nwell injection layer and a Pwell injection layer; a ZNwell implant layer, a ZPwell implant layer;
step S30, the injection layers in step S20 are annealed together through an annealing process, and the four injection layer areas show different junction depths after the same annealing due to different impurity injection doses; thereby forming Nwell regions, pwell regions, ZNwell regions, and ZPwell regions;
step S40, ion implantation is carried out to form an anode N+ implantation region, an anode P+ implantation region, a cathode N+ implantation region and a cathode P+ implantation region, and activation is carried out;
s50, interlayer dielectric is filled to form a field oxide layer, and contact holes are etched at corresponding positions;
in step S60, metal is deposited and etched to form anode metal and cathode metal.
Further, in step S, the interlayer medium is SiO2.
In a third aspect, an embodiment of the present invention provides a stacked structure of a dual zener well SCR device, including:
a P substrate, wherein DNwell regions and DPwell regions are alternately arranged above the P substrate; the structure inside the DNwell region is the same, i.e., the Nwell region is located to the left above the DNwell region; a Pwell region positioned on the right side of the Nwell region and tangential to the Nwell region; the junction depth of the ZNwell region is larger than that of the Nwell region; the junction depth is larger than that of the ZPwell region in the Pwell region; the anode P+ injection region is positioned on the inner surface of the Nwell region, and the right side of the anode P+ injection region is a certain distance away from the ZNwell region; an anode N+ injection region positioned on the inner surface of the Nwell region, and the right side of the anode N+ injection region is tangential to the left side of the anode P+ injection region; the cathode N+ injection region is positioned on the inner surface of the Pwell region, and the left side of the cathode N+ injection region is a certain distance away from the ZPwell region; the cathode P+ injection region is positioned on the inner surface of the Pwell region, and the left side of the cathode P+ injection region is tangential to the right side of the cathode N+ injection region; a field oxide layer located over the entire substrate surface;
each double-zener-well SCR device comprises anode metal, wherein the anode N+ injection region and the anode P+ injection region are in short circuit, and the anode metal is positioned above the field oxide layer; shorting the cathode N+ injection region and the cathode P+ injection region to form cathode metal above the field oxide layer; connecting cathode metal of the first SCR device with anode metal of the second SCR device through cascade metal; the anode metal of the first SCR device is used as the anode of the whole structure; the cathode metal of the second SCR device serves as the cathode of the whole structure, and the P substrate floats.
Further, the doping concentration of the ZNwell region and the ZPwell region are the same.
Further, the doping concentrations of the ZNwell region and ZPwell region are higher than the doping concentrations of the Nwell region and Pwell region, respectively.
Further, the doping concentrations of the ZNwell region and ZPwell region are tens to one hundred times the doping concentrations of the Nwell region and Pwell region, respectively.
The technical scheme provided by the embodiment of the invention has the beneficial effects that: the application provides a low trigger voltage SCR device with four trap areas of Nwell, pwell, ZNwell and ZPwell, wherein after the SCR device is started, no matter electron flow or hole flow passes through a high-concentration ZPwell and ZNwell area, so that a large amount of electrons are compounded, and the maintenance voltage of the SCR device is greatly improved. On the basis, the application also provides a stacking structure of the SCR device, and the structure is integrally provided with a high-voltage withstand frame, so that high-voltage latch-up protection can be realized by stacking the SCR device. In addition, the manufacturing process provided by the application is completely compatible with the existing BCD process.
Drawings
Fig. 1 is a schematic diagram of a prior art low voltage SCR device.
Fig. 2 is a schematic diagram of a dual zener SCR device in an embodiment of the present invention.
Fig. 3 is a schematic diagram of electric field distribution of a dual zener SCR device after large injection in an embodiment of the present invention.
Fig. 4 is a process step diagram of a dual zener SCR device in an embodiment of the present invention.
Fig. 5 is a schematic diagram of a stacked structure of a dual zener well SCR device in an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In the description of the embodiments of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate an orientation or a positional relationship based on that shown in the drawings, and are merely for convenience of description and to simplify the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In describing embodiments of the present invention, it should be noted that, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Example 1
An embodiment of the present invention proposes a dual zener well SCR device, as shown in fig. 2, including: p substrate 01, nwell region 02 located above P substrate 01; a Pwell region 03 positioned on the right side of the Nwell region 02 and tangential to the Nwell region 02; the ZNwell region 21 is positioned in the Nwell region 02, the right side is aligned with the Nwell region 02, the left side is positioned in the Nwell region 02, and the junction depth is greater than that of the Nwell region 02; the ZPwell region 22 is positioned in the Pwell region 03, the left side of the ZPwell region is aligned with the Pwell region 03, the right side of the ZPwell region is positioned in the Pwell region 03, and the junction depth of the ZPwell region 22 is larger than that of the Pwell region 03; anode p+ injection region 12 located on the inner surface of Nwell region 02 and having a certain distance from ZNwell region 21 on the right side; an anode n+ injection region 11 located on the inner surface of the Nwell region 02 and having the right side tangential to the left side of the anode p+ injection region 12; cathode n+ injection region 13 located on the inner surface of Pwell region 03 and having a certain distance from ZPwell region 22 on the left side; a cathode P+ injection region 14 positioned on the inner surface of the Pwell region 03 and having the left side tangent to the right side of the cathode N+ injection region 13; a field oxide layer 30 located over the entire substrate surface; shorting the anode n+ implant region 11 and the anode p+ implant region 12, an anode metal 40 located above the field oxide layer 30; cathode n+ implant 13 and cathode p+ implant 14 are shorted, cathode metal 41 being located over field oxide 30.
Further, the doping concentrations of the ZNwell region 21 and ZPwell region 22 are the same.
Further, the doping concentrations of the ZNwell region 21 and ZPwell region 22 are higher than the doping concentrations of the Nwell region 02 and Pwell region 03, respectively.
Further, the doping concentrations of the ZNwell region 21 and ZPwell region 22 are several tens to one hundred times the doping concentrations of the Nwell region 02 and Pwell region 03, respectively.
The Nwell region 02 is an N-well region, the Pwell region 03 is a P-well region, the ZNwell region 21 is a zener N-well region, and the ZPwell region 22 is a zener P-well region.
The working principle of the double-zener-well SCR device provided by the embodiment of the invention is that when the SCR device breaks down, as the ZNwell region 21 and the ZPwell region 22 are designed to be highly doped, the breakdown voltage is lower (about 7-8V), so that the low triggering function is realized; when the SCR device is fully turned on, as shown in fig. 3, a self-built electric field is generated according to poisson's equation due to the concentration difference (in the order of tens to 100 times) between the Nwell region 02 and the ZNwell region 21E p2 In the same way, an electric field peak will also exist between ZPwell region 22 and Pwell region 03E p4 Also because of the higher concentration of ZNwell region 21 and ZPwell region 22, according to the Poisson equationIt is difficult to enter a large injection state, so that an electric field peak still exists on the junction of ZNwell and ZPwellE p3 Whereas these three electric field peaks are not present in conventional SCR. Integrating this shows that the device maintains a voltage much higher than a conventional SCR.
Example two
The second embodiment of the invention provides a manufacturing process of a double zener well SCR device, as shown in fig. 4, comprising the following steps:
step S10, providing a P substrate 01;
step S20, sequentially injecting impurities with corresponding doses on the surface of the P substrate 01 through an ion injection process to form an Nwell injection layer 020 and a Pwell injection layer 030; a ZNwell implant layer 210, a ZPwell implant layer 220;
step S30, the injection layers in step S20 are annealed together through an annealing process, and the four injection layer areas show different junction depths after the same annealing due to different impurity injection doses; thereby forming Nwell region 02, pwell region 03, ZNwell region 21, and ZPwell region 22;
step S40, ion implantation is performed to form an anode N+ implantation region 11, an anode P+ implantation region 12, a cathode N+ implantation region 13 and a cathode P+ implantation region 14, and activation is performed;
step S50, interlayer dielectric is filled to form a field oxide layer 30, and contact holes are etched at corresponding positions;
the interlayer medium is SiO2;
in step S60, metal is deposited and etched to form the anode metal 40 and the cathode metal 41.
The manufacturing process provided by the second embodiment of the present application has the advantages that the process is completely compatible with the existing BCD process except for two more masks, and no other steps are required.
Example III
An embodiment of the present invention proposes a stacked structure of a dual zener well SCR device, as shown in fig. 5, including: comprises a P substrate 01, DNwell regions 012 and DPwell regions 011 alternately arranged above the P substrate 01; the structure inside the DNwell region 012 is the same, i.e., the Nwell region 02 is located on the upper left side of the DNwell region 012; a Pwell region 03 positioned on the right side of the Nwell region 02 and tangential to the Nwell region 02; the ZNwell region 21 is positioned in the Nwell region 02, the right side is aligned with the Nwell region 02, the left side is positioned in the Nwell region 02, and the junction depth is greater than that of the Nwell region 02; the ZPwell region 22 is positioned in the Pwell region 03, the left side of the ZPwell region is aligned with the Pwell region 03, the right side of the ZPwell region is positioned in the Pwell region 03, and the junction depth of the ZPwell region 22 is larger than that of the Pwell region 03; anode p+ implant region 12 located on the inner surface of Nwell region 02, right side a distance from ZNwell region 21; an anode n+ injection region 11 located on the inner surface of the Nwell region 02 and having the right side tangential to the left side of the anode p+ injection region 12; cathode n+ injection region 13 located on the inner surface of Pwell region 03 and on the left side at a distance from ZPwell region 22; a cathode P+ injection region 14 positioned on the inner surface of the Pwell region 03 and having the left side tangent to the right side of the cathode N+ injection region 13; a field oxide layer 30 located over the entire substrate surface;
each double zener well SCR device comprises an anode metal 40 positioned above the field oxide layer 30 by shorting the anode n+ injection region 11 and the anode p+ injection region 12; shorting cathode n+ implant 13 and cathode p+ implant 14, cathode metal 41 over field oxide 30; connecting the cathode metal 41 of the first SCR device with the anode metal 40 of the second SCR device through a cascade metal 42; the anode metal 40 of the first SCR device serves as the anode of the overall structure; the cathode metal 41 of the second SCR device serves as the cathode of the overall structure, with the P-substrate 01 floating.
The above DNwell region 012 is a substrate N-well region, and DPwell region 011 is a substrate P-well region.
According to the method, on the basis of original SCR, double Zener wells ZNwell and ZPwell are manufactured through multiple process compatible push-well steps, so that the double Zener well SCR device can achieve high maintenance voltage under lower trigger voltage, and latch-up immunity is achieved. The double-zener-well SCR devices are stacked, so that the anti-latch-up SCR with higher voltage can be formed, the voltage can be selected according to the stacking number, the trigger voltage of the single double-zener-well SCR device can be controlled through the dosage change of ZNwell and ZPwell, and therefore the SCR device and the stacking structure can achieve self-defining selection of each voltage theoretically. The double-Zener well SCR device and the manufacturing process are very suitable for a power supply protection scene, and the proposed structure can be realized by various other processes or substrates besides the embodiment, and the structure is within the protection scope of the application.
Finally, it should be noted that the above-mentioned embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same, and although the present invention has been described in detail with reference to the examples, it should be understood by those skilled in the art that modifications and equivalents may be made to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention, and all such modifications and equivalents are intended to be encompassed in the scope of the claims of the present invention.
Claims (6)
1. A dual zener well SCR device comprising: a P substrate (01), and an Nwell region (02) positioned above the P substrate (01); a Pwell region (03) positioned on the right side of the Nwell region (02) and tangential to the Nwell region (02); the ZNwell region (21) is positioned in the Nwell region (02), the right side of the ZNwell region is aligned with the Nwell region (02), the left side of the ZNwell region is positioned in the Nwell region (02), and the junction depth of the ZNwell region is larger than that of the Nwell region (02); the ZPwell region (22) is positioned in the Pwell region (03), the left side of the ZPwell region is aligned with the Pwell region (03), and the right side of the ZPwell region is positioned in the Pwell region (03), and the junction depth of the ZPwell region is larger than that of the Pwell region (03); an anode P+ injection region (12) positioned on the inner surface of the Nwell region (02) and at a certain distance from the ZNwell region (21) on the right side; an anode N+ injection region (11) which is positioned on the inner surface of the Nwell region (02) and the right side of which is tangential with the left side of the anode P+ injection region (12); a cathode N+ injection region (13) positioned on the inner surface of the Pwell region (03) and at a certain distance from the ZPwell region (22) on the left side; a cathode P+ injection region (14) which is positioned on the inner surface of the Pwell region (03) and the left side of which is tangential to the right side of the cathode N+ injection region (13); a field oxide layer (30) located over the entire substrate surface; shorting the anode n+ implant region (11) and the anode p+ implant region (12), an anode metal (40) located above the field oxide layer (30); shorting the cathode n+ implant (13) and the cathode p+ implant (14), a cathode metal (41) located above the field oxide layer (30);
the doping concentration of the ZNwell region (21) is the same as that of the ZPwell region (22);
the doping concentration of the ZNwell region (21) and the ZPwell region (22) is higher than that of the Nwell region (02) and the Pwell region (03), respectively;
ZNwell region (21) is a zener N well region, and ZPwell region (22) is a zener P well region.
2. The dual zener well SCR device of claim 1,
the doping concentrations of the ZNwell region (21) and the ZPwell region (22) are tens to hundreds times higher than the doping concentrations of the Nwell region (02) and the Pwell region (03), respectively.
3. A process for manufacturing a dual zener well SCR device as claimed in any one of claims 1-2, comprising the steps of:
step S10, providing a P substrate (01);
step S20, sequentially injecting impurities with corresponding doses on the surface of the P substrate (01) through an ion injection process to form an Nwell injection layer (020) and a Pwell injection layer (030); a ZNwell implant layer (210), a ZPwell implant layer (220);
step S30, the injection layers in step S20 are annealed together through an annealing process, and the four injection layer areas show different junction depths after the same annealing due to different impurity injection doses; thereby forming Nwell regions (02), pwell regions (03), ZNwell regions (21), and ZPwell regions (22);
step S40, ion implantation is carried out to form an anode N+ implantation region (11), an anode P+ implantation region (12), a cathode N+ implantation region (13), and a cathode P+ implantation region (14) which are activated;
s50, interlayer dielectric is filled to form a field oxide layer (30), and contact holes are etched at corresponding positions;
in step S60, metal is deposited and etched to form an anode metal (40) and a cathode metal (41).
4. The process for manufacturing a dual zener SCR device of claim 3,
in step S50, the interlayer dielectric is SiO2.
5. A stacked structure of a dual zener well SCR device, comprising:
a P substrate (01), DNwell regions (012) and DPwell regions (011) alternately arranged above the P substrate (01); the structure inside the DNwell region (012) is the same, i.e., the Nwell region (02) is located on the upper left side of the DNwell region (012); a Pwell region (03) positioned on the right side of the Nwell region (02) and tangential to the Nwell region (02); the ZNwell region (21) is positioned in the Nwell region (02), the right side of the ZNwell region is aligned with the Nwell region (02), the left side of the ZNwell region is positioned in the Nwell region (02), and the junction depth of the ZNwell region is larger than that of the Nwell region (02); the ZPwell region (22) is positioned in the Pwell region (03), the left side of the ZPwell region is aligned with the Pwell region (03), and the right side of the ZPwell region is positioned in the Pwell region (03), and the junction depth of the ZPwell region is larger than that of the Pwell region (03); an anode P+ injection region (12) positioned on the inner surface of the Nwell region (02) and at a certain distance from the ZNwell region (21) on the right side; an anode N+ injection region (11) which is positioned on the inner surface of the Nwell region (02) and the right side of which is tangential with the left side of the anode P+ injection region (12); a cathode N+ injection region (13) positioned on the inner surface of the Pwell region (03) and at a certain distance from the ZPwell region (22) on the left side; a cathode P+ injection region (14) which is positioned on the inner surface of the Pwell region (03) and the left side of which is tangential to the right side of the cathode N+ injection region (13); a field oxide layer (30) located over the entire substrate surface;
each double-zener-well SCR device comprises an anode metal (40) which is positioned above a field oxide layer (30) and is used for shorting an anode N+ injection region (11) and an anode P+ injection region (12); shorting the cathode n+ implant (13) and the cathode p+ implant (14), a cathode metal (41) located above the field oxide layer (30); connecting the cathode metal (41) of the first SCR device with the anode metal (40) of the second SCR device through a cascade metal (42); the anode metal (40) of the first SCR device acts as the anode of the overall structure; the cathode metal (41) of the second SCR device is used as a cathode of the whole structure, and the P substrate (01) floats;
the doping concentration of the ZNwell region (21) is the same as that of the ZPwell region (22);
the doping concentration of the ZNwell region (21) and the ZPwell region (22) is higher than that of the Nwell region (02) and the Pwell region (03), respectively;
ZNwell region (21) is a zener N well region, and ZPwell region (22) is a zener P well region.
6. The stack of dual zener SCR devices of claim 5,
the doping concentrations of the ZNwell region (21) and the ZPwell region (22) are tens to hundreds times higher than the doping concentrations of the Nwell region (02) and the Pwell region (03), respectively.
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