CN117038479A - Substrate and preparation method thereof - Google Patents
Substrate and preparation method thereof Download PDFInfo
- Publication number
- CN117038479A CN117038479A CN202311065240.5A CN202311065240A CN117038479A CN 117038479 A CN117038479 A CN 117038479A CN 202311065240 A CN202311065240 A CN 202311065240A CN 117038479 A CN117038479 A CN 117038479A
- Authority
- CN
- China
- Prior art keywords
- substrate
- bonding
- air pressure
- ambient air
- diagram
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 211
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 82
- 239000012080 ambient air Substances 0.000 claims abstract description 52
- 230000007547 defect Effects 0.000 claims abstract description 46
- 239000002245 particle Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000010586 diagram Methods 0.000 description 67
- 238000012360 testing method Methods 0.000 description 7
- 238000005498 polishing Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 4
- 239000003570 air Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The application discloses a substrate and a preparation method thereof. The substrate preparation method of the application comprises the following steps: providing a first substrate and a second substrate; aligning the first substrate with the second substrate; at a first ambient air pressure P 1 Applying a first bonding force F to a side of the first substrate facing away from the second substrate 1 The method comprises the steps of carrying out a first treatment on the surface of the At a second ambient air pressure P 2 Continuing to apply a second bonding force F to the side of the first substrate facing away from the second substrate 2 Bonding the first substrate to the second substrate; wherein the first ambient air pressure P 1 Lower than the second ambient air pressure P 2 . The application reduces the surface defects of the substrate by changing the bonding conditions.
Description
Technical Field
The application belongs to the technical field of semiconductor substrates, and particularly relates to a substrate and a preparation method thereof.
Background
In the prior art, the bonding of the substrate is carried out under normal pressure or certain pressure, and in the interface contact process of the two substrates, the gas escape speed at part of the positions is low due to the difference that the front of the bonding wave of the interface moves too fast or too slow, and finally bonding cavities and excessive surface defects appear at the edge positions.
Disclosure of Invention
The application aims to provide a substrate and a preparation method thereof. The application reduces the surface defect of the substrate and solves the technical problems by changing the bonding conditions in the bonding process.
The embodiment of the application provides a preparation method of a substrate, which comprises the following steps:
providing a first substrate and a second substrate;
aligning the first substrate with the second substrate;
at a first ambient air pressure P 1 Applying a first bonding force F to the surface of the first substrate facing away from the second substrate 1 ；
At a second ambient air pressure P 2 Continuing to apply a second bonding force F to the surface of the first substrate facing away from the second substrate 2 Bonding the first substrate to the second substrate;
wherein the first ambient air pressure P 1 Lower than the second ambient air pressure P 2 。
In some embodiments, at a first bonding time T 1 Applying the first bonding force F 1 At the second bonding time T 2 Applying the first bonding force F 2 The method comprises the following steps: t (T) 1 ＜T 2 。
In some embodiments, the total time for bonding the first substrate to the second substrate is T, satisfying t=t 1 +T 2 And T is more than or equal to 20s and less than or equal to 40s.
In some embodiments, the first bonding time T 1 The method meets the following conditions: t is more than or equal to 6s 1 ≤8s。
In some embodiments, the second bonding time T 2 The method meets the following conditions: 14s is less than or equal to T 2 ≤32s。
In some embodiments, the first bonding force F 1 And the first bonding time T 1 The method meets the following conditions: f (F) 1 ＝kT 1 And k is more than or equal to 300 and less than or equal to 500, F 1 Is in mN.
In some embodiments, the first ambient air pressure P 1 The first bonding time T 1 Said second ambient air pressure P 2 And the second bonding time T 2 The method meets the following conditions: dP 1 /dT 1 ≤dP 2 /dT 2 。
In some embodiments, the first ambient air pressure P 1 And the first bonding time T 1 The method meets the following conditions:
-0.05≤dP 1 /dT 1 ≤-0.005。
in some embodiments, the second ambient air pressure P 2 And the second bonding time T 2 The method meets the following conditions:
-0.005≤dP 2 /dT 2 ≤-0.0005。
in some embodiments, the first substrate has a first surface and a second surface disposed away from the first surface, the first surface being in contact with the second substrate, the first bonding force F 1 Applied to the second surface, and then the second bonding force F 2 Applied to the second surface.
In some embodiments, the first substrateHaving a first surface and a second surface facing away from each other, the first surface being bonded to the second substrate, the first bonding force F 1 Vertically applied to the second surface, and then the second bonding force F 2 Applied perpendicularly to said second surface.
In some embodiments, the first bonding force F 1 The range of (2) is: 1700mN is less than or equal to F 1 ≤3800mN。
In some embodiments, the second bonding force F 2 The range of (2) is: 2000mN is less than or equal to F 2 ≤3000mN。
In some embodiments, the first ambient air pressure P 1 The method meets the following conditions: p is more than or equal to 0.6mbar 1 ≤1.0mbar。
In some embodiments, the second ambient air pressure P 2 The method meets the following conditions: p is more than or equal to 0.1mbar 2 ≤0.6mbar。
In some embodiments, thinning and polishing are performed on the first substrate and the second substrate after bonding, so as to obtain the substrates.
In some embodiments, the first particulate defect of the substrate surface has an average diameter d 1 ，0.5μm≤d 1 The number of the first granular defects is C 1 The method comprises the following steps: c (C) 1 ≤5。
In some embodiments, the second particulate defect of the substrate surface has an average diameter d 2 ，0.09μm≤d 2 Less than 0.5 μm, the second particle defect number is C 2 The method comprises the following steps: c (C) 2 ≤20。
Correspondingly, the embodiment of the application also provides a substrate, which is prepared by the preparation method.
The application has the beneficial effects that: compared with the prior art, the application provides a preparation method of a substrate, and the preparation of the substrate comprises the following steps: providing a first substrate and a second substrate; aligning the first substrate with the second substrate, applying a first bonding force F to a side of the first substrate facing away from the second substrate under a first ambient pressure 1 The method comprises the steps of carrying out a first treatment on the surface of the At a second ambient air pressure P 2 Continuing to deviate from the first substrateOne side of the two substrates is applied with a second bonding force F 2 Bonding a first substrate to a second substrate, wherein a first ambient air pressure P 1 Lower than the second ambient air pressure P 2 . According to the application, the substrate without edge defects is obtained by adjusting the ambient air pressure and increasing the air escape speed.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a bonding wave edge and bonded structure of a prior art substrate bonding process;
FIG. 2 is a schematic flow chart of a prior art substrate bonding process;
FIG. 3 is a schematic diagram of the bonding wave edge and bonded structure of the substrate bonding process of the present application;
FIG. 4 is a schematic flow chart of the substrate bonding of the present application;
fig. 5 is a diagram of a substrate SAM after bonding according to example 1, wherein a diagram a is a diagram of a substrate SAM after bonding, and B diagram B is an enlarged view of a portion a in a diagram;
FIG. 6 is a diagram of a substrate SAM after bonding according to example 2, wherein a is a diagram of a substrate SAM after bonding, and B is an enlarged view of a portion B in a diagram;
fig. 7 is a diagram of a substrate SAM after bonding according to example 3, wherein a diagram a is a diagram of a substrate SAM after bonding, and B diagram B is an enlarged view of a portion C in a diagram;
fig. 8 is a diagram of a substrate SAM after bonding according to example 4, wherein a diagram a is a diagram of a substrate SAM after bonding, and B diagram B is an enlarged diagram of a portion D in a diagram;
fig. 9 is a diagram of a substrate SAM after bonding according to example 5, wherein a diagram a is a diagram of a substrate SAM after bonding, and B diagram B is an enlarged diagram of a portion E in a diagram;
fig. 10 is a diagram of a substrate SAM after bonding according to example 6, wherein a diagram a is a diagram of a substrate SAM after bonding, and B diagram B is an enlarged diagram of a portion F in a diagram a;
FIG. 11 is a diagram of a substrate SAM after bonding according to example 7, wherein a diagram is a diagram of a substrate SAM after bonding, and B diagram is an enlarged diagram of a portion G in a diagram;
fig. 12 is a diagram of a substrate SAM after bonding according to example 8, wherein a diagram a is a diagram of a substrate SAM after bonding, and B diagram B is an enlarged view of portion H in a diagram;
FIG. 13 is a diagram of a substrate SAM after bonding according to example 9, wherein a is a diagram of the substrate SAM after bonding and B is an enlarged view of the portion I in a;
FIG. 14 is a diagram of a substrate SAM after bonding according to example 10, wherein a is a diagram of a substrate SAM after bonding, and B is an enlarged view of a J portion in a diagram;
FIG. 15 is a diagram of a substrate SAM after bonding according to example 11;
FIG. 16 is a diagram of a substrate SAM after bonding according to example 12;
FIG. 17 is a diagram of a substrate SAM after bonding according to example 13;
FIG. 18 is a diagram of a bonded substrate SAM according to example 14, wherein a is a diagram of a bonded substrate SAM, and B is an enlarged view of a portion K of the a diagram;
fig. 19 is a diagram of a substrate SAM after bonding according to example 15, wherein a diagram a is a diagram of a substrate SAM after bonding, and B diagram B is an enlarged diagram of a portion L in a diagram;
FIG. 20 is a diagram of a bonded substrate SAM according to example 16, wherein a is a diagram of a bonded substrate SAM, and B is an enlarged view of a portion M in a diagram;
FIG. 21 is a diagram of a substrate SAM after bonding in example 17;
FIG. 22 is a diagram of a substrate SAM after bonding in example 18;
FIG. 23 is a schematic view of surface defects of the substrate prepared in example 1;
FIG. 24 is a schematic view of surface defects of the substrate prepared in example 2;
FIG. 25 is a schematic view of surface defects of the substrate prepared in example 3;
FIG. 26 is a schematic view of surface defects of the substrate prepared in example 4;
FIG. 27 is a schematic view of surface defects of the substrate prepared in example 5;
FIG. 28 is a schematic view of surface defects of the substrate prepared in example 6;
FIG. 29 is a schematic view of surface defects of the substrate prepared in example 7;
FIG. 30 is a schematic view of surface defects of a substrate prepared in example 8;
FIG. 31 is a schematic view of the surface defects of the substrate prepared in example 9;
FIG. 32 is a schematic view of surface defects of the substrate prepared in example 10;
FIG. 33 is a schematic view of surface defects of the substrate prepared in example 11;
FIG. 34 is a schematic view of surface defects of the substrate prepared in example 12;
FIG. 35 is a schematic view of surface defects of the substrate prepared in example 13;
FIG. 36 is a schematic view of surface defects of the substrate prepared in example 14;
FIG. 37 is a schematic view of surface defects of the substrate prepared in example 15;
FIG. 38 is a schematic view of surface defects of the substrate prepared in example 16;
FIG. 39 is a schematic diagram of surface defects of the substrate prepared in example 17;
FIG. 40 is a schematic view of surface defects of the substrate prepared in example 18.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third and the like are used merely as labels, and do not impose numerical requirements or on the order of construction. Various embodiments of the application may exist in a range of forms; it should be understood that the description in a range format is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of the application; it is therefore to be understood that the range description has specifically disclosed all possible sub-ranges and individual values within that range. For example, it should be considered that a description of a range from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the ranges, such as 1, 2, 3, 4, 5, and 6, wherever applicable. In addition, whenever a numerical range is referred to herein, it is meant to include any reference number (fractional or integer) within the indicated range.
Fig. 1 is a schematic view of a structure of a bonding wave edge in a substrate bonding process in the prior art, fig. 2 is a schematic view of a flow of substrate bonding, an upper view in fig. 2 is a cross-sectional view of a substrate, and a lower view in fig. 2 is a top view of the substrate. As shown in fig. 1 and 2, void defects are formed at the bonded edges due to the difference in the movement speed of the interface bonding wave during the bonding of the substrates. In order to solve the problem of substrate bonding, the embodiment of the application provides a preparation method of a substrate, which comprises the following steps:
providing a first substrate 100 and a second substrate 200;
aligning the first substrate 100 with the second substrate 200;
at a first ambient air pressure P 1 Next, a first bonding force F is applied to a side of the first substrate 100 facing away from the second substrate 200 1 The method comprises the steps of carrying out a first treatment on the surface of the Then, at a second ambient air pressure P 2 Continuing to apply the second bonding force F to the side of the first substrate 100 facing away from the second substrate 200 2 Bonding the first substrate 100 to the second substrate 200; wherein the first ambient air pressure P 1 Lower than the second ambient air pressure P 2 。
According to the application, the ambient air pressure in the bonding stage is controlled, so that the escape speed of air is increased, and the edge defect of the substrate is reduced.
In some embodiments, at a first bonding time T 1 Applying a first bonding force F 1 At the second bonding time T 2 Applying a first bonding force F 2 The method comprises the following steps: t (T) 1 ＜T 2 . The application further controls the first bonding time and the second bonding time, so that better bonding effect can be realized, and surface defects are reduced.
In some embodiments of the present application, in some embodiments,the total bonding time of the first substrate 100 and the second substrate 200 is T, which satisfies: t=t 1 +T 2 And T is more than or equal to 20s and less than or equal to 40s.
The total bonding time is controlled within 20-40 s, so that the quality of the bonded substrate is ensured.
In some embodiments, T has a value of any or a range of any two of 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40.
In some embodiments, the first bonding time T 1 The method meets the following conditions: t is more than or equal to 6s 1 ≤8s。
In some embodiments, the first bonding time T 1 The value of(s) is any one value or a range consisting of any two values of 6, 7 and 8.
In some embodiments, the second bonding time T 2 The method meets the following conditions: 14s is less than or equal to T 2 ≤32s。
In some embodiments, the second bonding time T 2 The value of(s) is any value or a range of any two values of 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31 and 32.
Fig. 3 is a schematic view of a structure of a bonding wave edge in a substrate bonding process according to the present application, fig. 4 is a schematic view of a flow of substrate bonding according to the present application, an upper view in fig. 4 is a cross-sectional view of a substrate, and a lower view in fig. 4 is a top view of the substrate. In order to solve the difference of the movement speeds of bonding waves, the substrate bonding adopts staged bonding, and the bonding process is divided into a first bonding process and a second bonding process. The first bonding process is gradually pressurized along with the time, and meanwhile, the ambient air pressure is reduced, the escape speed of the air is increased, and the difference of the movement speeds of the bonding wave edges is avoided. In the second bonding process, in the second bonding force F 2 Under the action of the pressure sensor, the escape speed of the ambient air pressure is further reduced, the surface of the substrate, especially the edge defect is reduced, and the quality of the bonded substrate can be controlled.
In some embodiments, the first bonding force F 1 And a first bonding time T 1 The method meets the following conditions: f (F) 1 ＝kT 1 K is more than or equal to 300 and less than or equal to 500;
wherein F is 1 A first bonding force applied in the first bonding process in mN; t (T) 1 The first bonding time, which is continuous for the first bonding process, is in s.
When the first bonding force F of the application 1 Time of first bonding T 1 The positive correlation coefficient of (2) is controlled within the range of 300-500, the surface defect of the substrate can be further reduced, and finally, the substrate is characterized as being free of white spots under the condition of SAM detection high resolution (less than or equal to 100 mu m).
In some embodiments, k has a value of any or a range of values of 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, 400, 410, 420, 430, 440, 450, 460, 470, 480, 490, 500.
In some embodiments, the first ambient air pressure P 1 First bonding time T 1 Second ambient air pressure P 2 And a second bonding time T 2 The method meets the following conditions: dP 1 /dT 1 ≤dP 2 /dT 2 。
According to the application, by controlling the ambient pressure reduction rate of the first bonding stage and the ambient pressure reduction rate of the second bonding stage, the pressure reduction speed is higher in the first stage, the escape speed of gas is increased, the amplitude reduction of the ambient pressure is reduced in the second bonding stage, and the bonding wave is moved to the edge at a uniform speed while the bonding is realized.
In some embodiments, the first ambient air pressure P 1 And a first bonding time T 1 The method meets the following conditions:
-0.05≤dP 1 /dT 1 ≤-0.005；
wherein P is 1 A first ambient air pressure set during the first bonding in mbar; t (T) 1 The first bonding time, which is continuous for the first bonding process, is in s.
In some embodiments, dP 1 /dT 1 The value of (C) is any value or a range of any two values in-0.05, -0.04, -0.03, -0.02, -0.01 and-0.005.
The application is controlledFirst ambient air pressure P in making first bond 1 The pressure reduction amplitude of the gas can control the escape speed of the gas and the bonding pressure applied, so that the gas escape speed is ensured, the bonding quality requirement of the substrate is met, and the deformation of the substrate structure caused by unbalanced control of the gas pressure and the bonding pressure is avoided.
In some embodiments, the second ambient air pressure P 2 And the second bonding time T 2 The method meets the following conditions:
-0.005≤dP 2 /dT 2 ≤-0.0005。
wherein P is 2 A second ambient air pressure set during a second bonding process in mbar; t (T) 2 And a second bonding time, in s, which is continuous for the second bonding process.
In some embodiments, dP 2 /dT 2 The values of (C) are any value or a range of any two values of-0.005, -0.004, -0.003, -0.002, -0.001 and-0.0005.
The application avoids the quality of the bonded substrate caused by too fast depressurization by controlling the depressurization rate of the ambient pressure in the second bonding stage.
As shown in fig. 4, the first substrate 100 has a first surface 101 and a second surface 102 facing away from each other, the first surface 101 is bonded to the second substrate 200, and a first bonding force F 1 Applied to the second surface 102 and then a second bonding force F 2 Applied to the second surface 102.
In some embodiments, the first bonding force F 1 Is applied perpendicularly to the second surface 102, and then a second bonding force F 2 Applied perpendicularly to the second surface 102.
In some embodiments, the first bonding force F 1 The range of (2) is: 1700mN is less than or equal to F 1 ≤3800mN。
In some embodiments, the first bonding force F 1 The value of (mN) is any value or a range of any two values of 1700, 1750, 1800, 1850, 1900, 1950, 2000, 2100, 2200, 2300, 2400, 2500, 2600, 2700, 2800, 2900, 3000, 3100, 3200, 3300, 3400, 3500, 3600, 3700, 3800.
In some embodiments, the second bonding process satisfies: 2000mN is less than or equal to F 2 ≤3000mN；
Wherein F is 2 Is the second bonding force applied during the second bonding in mN. The application further controls the second bonding force applied by the second bonding process and controls the quality of the bonded substrate. In some embodiments, the second bonding force F 2 (mN) is any one value or a range of values of any two values of 2000, 2100, 2200, 2300, 2400, 2500, 2600, 2700, 2800, 2900, 3000.
In some embodiments, the first ambient air pressure P 1 The method meets the following conditions: p is more than or equal to 0.6mbar 1 ≤1.0mbar。
In some embodiments, P 1 (mbar) is any value or range of values consisting of any two values of 0.60, 0.65, 0.70, 0.75, 0.80, 0.85, 0.90, 0.95 and 1.0.
In some embodiments, the second ambient air pressure P 2 The method meets the following conditions: p is more than or equal to 0.1mbar 2 ≤0.6mbar。
In some embodiments, P 2 (mbar) is any one or two of 0.1, 0.15, 0.20, 0.25, 0.30, 0.40, 0.45, 0.50 and 0.60.
In some embodiments, the bonding pressure is applied by a mechanical indenter disposed over the silicon wafer, the mechanical indenter may apply the bonding pressure with a circular indenter of PFA material, the applied pressure having an area of 1mm 2 。
In some embodiments, the ambient air pressure during bonding is controlled by means of a motor vacuum.
In some embodiments, the applied bonding pressure is detected by a pressure sensor.
In some embodiments, the ambient air pressure during bonding is detected by a pressure sensor.
In some embodiments, the bonded first substrate 100 and second substrate 200 are thinned and polished to provide a substrate 300.
In some embodiments, the method of thinning includes grinding, lapping, chemical mechanical polishing, dry polishing, electrochemical etching, wet etching, plasma enhanced chemical etching, atmospheric plasma etching, and the like.
In some embodiments, the method of polishing is chemical mechanical polishing (Chemical Mechanical Polishing, CMP).
In some embodiments, the first particulate defect on the surface of the substrate 300 has an average diameter d 1 ，0.5μm≤d 1 The number of the first granular defects is C 1 The method comprises the following steps: c (C) 1 And is less than or equal to 5. Such as C 1 The value of (2) is any value or any range of two values of 0, 1, 2, 3, 4 and 5.
In some embodiments, the second particulate defect on the surface of the substrate 300 has an average diameter d 2 ，0.09μm≤d 2 Less than 0.5 μm, the second particle defect number is C 2 The method comprises the following steps: c (C) 2 And is less than or equal to 20. Such as C 2 The values of (2) are any value or any range of two values of 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 and 20.
The embodiment of the application also provides a substrate, which is prepared by the preparation method. The edge defect of the substrate prepared by the method is obviously reduced.
Example 1:
a method of preparing a substrate, comprising the steps of:
providing a first substrate 100, wherein the first substrate 100 is provided with a first surface 101 and a second surface 102 arranged opposite to the first surface 101;
providing a second substrate 200 having a third surface 201;
reducing the ambient air pressure to 1mbar;
applying a first bonding process: after aligning the first surface 101 with the third surface 201, a first bonding process is applied in a set first ambient air pressure, where the first bonding process satisfies:
first bonding force F 1 ＝F 1 (T 1 )＝kT 1 The unit is mN, wherein the value of k is 300;
first ambient air pressure P 1 ＝P 1 (T 1 ) In mbar, where dP 1 /dT 1 ＝-0.005；
First bonding time T 1 =6, in s;
applying a second bonding process:
second bonding force F 2 =2000, in mN;
second ambient air pressure P 2 ＝P 2 (T 2 ) In mbar, where dP 2 /dT 2 ＝-0.005；
Second bonding time T 2 =14, in s;
after the first substrate 100 and the second substrate 200 are bonded, SAM test is performed, and the tested substrate performs the following operations:
after the first substrate 100 is bonded with the second substrate 200, the back surface of the first substrate 100 is subjected to thinning treatment to 10 μm;
chemical mechanical polishing: the thickness of the first substrate was controlled to 5 μm to obtain a substrate 300.
The thinned substrate 300 is subjected to surface defect level test.
Examples 2 to 18, parameters of the first bonding process and the second bonding process were adjusted to obtain substrates, and specific parameters are shown in table 1.
And (3) testing:
SAM test: SAM test was performed on the silicon wafer using an ultrasonic microscope to determine whether or not the bonded substrate was defective, and the results are shown in Table 1.
Surface defect test: surface defectivity was tested using SP 2.
TABLE 1 preparation parameters and test results for inventive examples 1-18
FIGS. 5 to 22 are graphs of SAM (pixel. Ltoreq.100) of bonded substrates prepared in examples 1 to 18, and FIGS. 23 to 40 are graphs of surface defects of substrates prepared in examples 1 to 18. From the results of examples 1 to 18, it can be seen that the substrate surface defectivity can be reduced when the substrate bonding process of the present application is controlled in stages.
From the results of examples 1 to 5 and examples 7 to 10, it can be seen that when the first bonding time T 1 The defect degree of the surface of the substrate can be further reduced by controlling the bonding time to be within a period of 6-8 s and controlling the bonding time to be within 20-40 s. As can be seen from examples 11 to 14, the first bonding force F is controlled 1 The rate of pressurization of the substrate bond and the rate of depressurization of ambient air pressure can reduce edge defects and also surface defects. As can be seen from examples 14 to 18, the second bonding force F applied by the second bonding process is controlled 2 Second ambient air pressure P 2 The substrate quality can be improved.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The substrate and the preparation method thereof provided by the embodiment of the present application are described in detail, and specific examples are applied to illustrate the principle and the implementation of the present application, and the description of the above embodiments is only used for helping to understand the method and the core idea of the present application; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, the present description should not be construed as limiting the present application.
Claims (18)
1. A method of preparing a substrate, comprising the steps of:
providing a first substrate (100) and a second substrate (200);
-aligning the first substrate (100) with the second substrate (200);
at a first ambient air pressure P 1 Next, for the first substrate(100) Applying a first bonding force F to a side facing away from the second substrate (200) 1 ；
At a second ambient air pressure P 2 Continuing to apply a second bonding force F to a side of the first substrate (100) facing away from the second substrate (200) 2 Bonding the first substrate (100) to the second substrate (200);
wherein the first ambient air pressure P 1 Lower than the second ambient air pressure P 2 。
2. The method of preparing a substrate according to claim 1, wherein at a first bonding time T 1 Applying the first bonding force F 1 At the second bonding time T 2 Applying the first bonding force F 2 The method comprises the following steps: t (T) 1 ＜T 2 。
3. The method of manufacturing a substrate according to claim 2, wherein the total time for bonding the first substrate (100) to the second substrate (200) is T, satisfying: t=t 1 +T 2 And T is more than or equal to 20s and less than or equal to 40s.
4. The method of preparing a substrate according to claim 2, wherein the first bonding time T 1 The method meets the following conditions: t is more than or equal to 6s 1 ≤8s。
5. The method of preparing a substrate according to claim 2, wherein the second bonding time T 2 The method meets the following conditions: 14s is less than or equal to T 2 ≤32s。
6. The method of preparing a substrate according to claim 2, wherein the first bonding force F 1 And the first bonding time T 1 The method meets the following conditions: f (F) 1 ＝kT 1 And k is more than or equal to 300 and less than or equal to 500, F 1 Is in mN.
7. The method of manufacturing a substrate according to claim 2, wherein theFirst ambient air pressure P 1 The first bonding time T 1 Said second ambient air pressure P 2 And the second bonding time T 2 The method meets the following conditions: dP 1 /dT 1 ≤dP 2 /dT 2 。
8. The method of preparing a substrate according to claim 2, wherein the first ambient air pressure P 1 And the first bonding time T 1 The method meets the following conditions: -dP of 0.05 ≡ 1 /dT 1 ≤-0.005。
9. The method of preparing a substrate according to claim 2, wherein the second ambient air pressure P 2 And the second bonding time T 2 The method meets the following conditions: -dP is not less than 0.005 2 /dT 2 ≤-0.0005。
10. The method of producing a substrate according to claim 1, wherein the first substrate (100) has a first surface (101) and a second surface (102) facing away from each other, the first surface (101) being bonded to the second substrate (200), the first bonding force F 1 Applied to the second surface (102) and then the second bonding force F 2 Is applied to the second surface (102).
11. The method of preparing a substrate according to claim 1, wherein the first bonding force F 1 The range of (2) is: 1700mN is less than or equal to F 1 ≤3800mN。
12. The method of manufacturing a substrate according to claim 1, wherein the second bonding force F 2 The range of (2) is: 2000mN is less than or equal to F 2 ≤3000mN。
13. The method of preparing a substrate according to claim 1, wherein the first ambient air pressure P 1 The method meets the following conditions: p is more than or equal to 0.6mbar 1 ≤1.0mbar。
14. The method of preparing a substrate according to claim 1, wherein the second ambient air pressure P 2 The method meets the following conditions: p is more than or equal to 0.1mbar 2 ≤0.6mbar。
15. The method of manufacturing a substrate according to claim 1, wherein the first substrate (100) and the second substrate (200) after bonding are thinned and polished to obtain the substrate (300).
16. The method of producing a substrate according to claim 15, wherein the first particulate defect of the surface of the substrate (300) has an average diameter d 1 ，0.5μm≤d 1 The method comprises the steps of carrying out a first treatment on the surface of the The number of the first granular defects is C 1 The method comprises the following steps: c (C) 1 ≤5。
17. The method of producing a substrate according to claim 15, wherein the second particulate defect on the surface of the substrate (300) has an average diameter d 2 The method comprises the following steps: d is 0.09 mu m less than or equal to d 2 < 0.5 μm; the second particle defect number is C 2 The method comprises the following steps: c (C) 2 ≤20。
18. A substrate, characterized in that it is produced by the production method according to any one of claims 1 to 17.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311065240.5A CN117038479A (en) | 2023-08-22 | 2023-08-22 | Substrate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311065240.5A CN117038479A (en) | 2023-08-22 | 2023-08-22 | Substrate and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117038479A true CN117038479A (en) | 2023-11-10 |
Family
ID=88639726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311065240.5A Pending CN117038479A (en) | 2023-08-22 | 2023-08-22 | Substrate and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117038479A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120038027A1 (en) * | 2010-08-11 | 2012-02-16 | Marcel Broekaart | Method for molecular adhesion bonding at low pressure |
| US20130312907A1 (en) * | 2012-05-23 | 2013-11-28 | Lg Display Co., Ltd. | Substrate-bonding apparatus for display device and method for manufacturing bonded substrate |
| US20140261960A1 (en) * | 2013-03-14 | 2014-09-18 | International Business Machines Corporation | Wafer-to-wafer oxide fusion bonding |
| CN107946185A (en) * | 2017-11-22 | 2018-04-20 | 德淮半导体有限公司 | Wafer bonding method |
| CN109786229A (en) * | 2018-12-05 | 2019-05-21 | 中北大学 | A kind of wafer bonding method and the method for corresponding foreign substrate preparation |
| US20190355699A1 (en) * | 2018-05-17 | 2019-11-21 | Yangtze Memory Technologies Co., Ltd. | Methods and Systems for Adjusting Wafer Deformation During Wafer Bonding |
| CN115621403A (en) * | 2022-10-25 | 2023-01-17 | 佛山市国星半导体技术有限公司 | Bonding method of low-warpage bonding sheet |
-
2023
- 2023-08-22 CN CN202311065240.5A patent/CN117038479A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120038027A1 (en) * | 2010-08-11 | 2012-02-16 | Marcel Broekaart | Method for molecular adhesion bonding at low pressure |
| US20130312907A1 (en) * | 2012-05-23 | 2013-11-28 | Lg Display Co., Ltd. | Substrate-bonding apparatus for display device and method for manufacturing bonded substrate |
| US20140261960A1 (en) * | 2013-03-14 | 2014-09-18 | International Business Machines Corporation | Wafer-to-wafer oxide fusion bonding |
| CN107946185A (en) * | 2017-11-22 | 2018-04-20 | 德淮半导体有限公司 | Wafer bonding method |
| US20190355699A1 (en) * | 2018-05-17 | 2019-11-21 | Yangtze Memory Technologies Co., Ltd. | Methods and Systems for Adjusting Wafer Deformation During Wafer Bonding |
| CN109786229A (en) * | 2018-12-05 | 2019-05-21 | 中北大学 | A kind of wafer bonding method and the method for corresponding foreign substrate preparation |
| CN115621403A (en) * | 2022-10-25 | 2023-01-17 | 佛山市国星半导体技术有限公司 | Bonding method of low-warpage bonding sheet |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100396014B1 (en) | Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method | |
| US6156624A (en) | Method for production of SOI substrate by pasting and SOI substrate | |
| US8530331B2 (en) | Process for assembling substrates with low-temperature heat treatments | |
| WO2014041904A1 (en) | Method for manufacturing laminate provided with uneven shape, and transfer film | |
| JP2719113B2 (en) | Method for straining single crystal silicon wafer | |
| US20100130021A1 (en) | Method for processing a silicon-on-insulator structure | |
| WO2019071978A1 (en) | Nano-scale single crystal thin film | |
| CN108793053A (en) | MEMS SOI wafers and preparation method and MEMS sensor and preparation method | |
| CN117038479A (en) | Substrate and preparation method thereof | |
| CN113529050B (en) | Plasma etching method for polishing diamond film and product thereof | |
| JP6844733B1 (en) | Substrate wafer manufacturing method and substrate wafer | |
| US6004860A (en) | SOI substrate and a method for fabricating the same | |
| US20040137697A1 (en) | Method and apparatus for separating composite substrate | |
| CN114378645A (en) | Preparation process of high-flatness polished wafer | |
| JP2013507764A (en) | Wafer support member, manufacturing method thereof, and wafer polishing unit including the same | |
| WO2003046994A1 (en) | Method for producing cemented wafer | |
| CN112670170B (en) | Method for improving bonding force of silicon wafer | |
| JP2001085648A (en) | Method for manufacturing bonding wafer and bonding wafer | |
| JP5303883B2 (en) | Bonded wafer manufacturing apparatus and manufacturing method | |
| KR102371177B1 (en) | Mask metal sheet and template for supporting mask metal sheet and mask intergrated frame | |
| US20110269380A1 (en) | Base layer, polishing pad including the same and polishing method | |
| KR102485406B1 (en) | Producing method of mask metal sheet and producing method of template for supporting mask and producing method of mask integrated frame | |
| JPH08274286A (en) | Manufacture of soi substrate | |
| JPH08264740A (en) | Coupled wafer and production thereof | |
| TW200931557A (en) | Semiconductor substrate and method for inspecting semiconductor substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Country or region after: China Address after: 214203 Dongfeng Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Applicant after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 214203 Dongfeng Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Applicant before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China |