CN117029998A - Ultrasonic imaging chip based on-chip optical waveguide - Google Patents
Ultrasonic imaging chip based on-chip optical waveguide Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 74
- 238000003384 imaging method Methods 0.000 title claims abstract description 34
- 238000005253 cladding Methods 0.000 claims abstract description 31
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 230000009471 action Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 17
- 238000012285 ultrasound imaging Methods 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 4
- 238000002604 ultrasonography Methods 0.000 claims description 4
- 230000010363 phase shift Effects 0.000 claims description 3
- 230000008054 signal transmission Effects 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
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- 239000002210 silicon-based material Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229920001486 SU-8 photoresist Polymers 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H9/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by using radiation-sensitive means, e.g. optical means
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The present disclosure provides an ultrasonic imaging chip based on an on-chip optical waveguide, comprising a substrate layer, a bottom cladding layer, a waveguide grating layer, and an upper cladding layer. The substrate layer is used for physical support of the chip; the bottom cladding layer is arranged on the substrate layer and used for limiting the optical field and reducing the transmission loss; the waveguide grating layer is arranged on the bottom cladding layer and comprises a plurality of waveguide gratings; the upper cladding layer is arranged on the waveguide grating layer and is used for receiving and amplifying ultrasonic signals; the waveguide grating is used for transmitting light and modulating the light under the action of the ultrasonic signal, so that ultrasonic imaging with higher performance can be realized.
Description
Technical Field
The disclosure relates to the technical field of integrated optics and photoacoustic sensing, in particular to an ultrasonic imaging chip based on an on-chip optical waveguide.
Background
In recent years, various types of devices applied to ultrasound imaging have been developed, including fiber-optic based ultrasound sensors, piezoelectric based ultrasound sensors, and capacitive micromachined ultrasound transducers based on microelectromechanical systems. Compared with the piezoelectric detection and capacitance detection schemes, the ultrasonic detection method has the advantages that the ultrasonic detection is carried out by using an optical method, and the sensing unit can be miniaturized and high in bandwidth without sacrificing sensitivity, so that the piezoelectric detection and capacitance detection schemes are better integrated, and higher imaging resolution is realized. Ultrasonic detection imaging using optical methods is mainly based on monitoring wavelength modulation due to deformation of the optical resonator and refractive index disturbance caused by ultrasonic waves. In acoustic sensing, the grating length is limited to be less than half of the wavelength of sound waves, and Pi-phase-shift fiber gratings (Pi-phase-shifted fiber Bragg grating, PS-FBG) limit light to the vicinity of a phase shift position, so that the effective grating sensing length is short, and the ultrasonic sensor is more suitable for sensing ultrasonic waves with small wavelength.
In waveguide material selection, polymer resonators are the materials of choice for ultrasonic detection in general because they have a highly elastic optical response and thus a high sensitivity, and acoustic impedances that are relatively matched to those of biological tissue and water, thereby reducing spurious signals generated by reverberation and parasitic effects of Surface Acoustic Waves (SAW) and improving signal fidelity. However, the polymer resonator has excellent acoustic properties, but is relatively poor in constraint on optical modes due to its low refractive index, and has a limit in improvement of Q value and sensitivity and reduction of size, and can withstand the optical power of laser light, so that a simple polymer resonator is not an optimal candidate for manufacturing a miniaturized ultrasonic sensor. While silicon resonators compatible with CMOS processes have the advantages of high sensitivity, high stability and high Q, their large waveguide loss and high acoustic impedance severely limit imaging accuracy and resolution.
Disclosure of Invention
Based on the above problems, the present disclosure provides an ultrasonic imaging chip based on an on-chip optical waveguide, so as to alleviate the above technical problems in the prior art and realize higher performance ultrasonic imaging.
Technical scheme (one)
The present disclosure provides an ultrasonic imaging chip based on an on-chip optical waveguide, comprising a substrate layer, a bottom cladding layer, a waveguide grating layer, and an upper cladding layer. The substrate layer is used for physical support of the chip; the bottom cladding layer is arranged on the substrate layer and used for limiting the optical field and reducing the transmission loss; the waveguide grating layer is arranged on the bottom cladding layer and comprises a plurality of waveguide gratings; the upper cladding layer is arranged on the waveguide grating layer and is used for receiving and amplifying ultrasonic signals; the waveguide grating is used for transmitting light and modulating the light under the action of the ultrasonic signal, so that ultrasonic imaging with higher performance can be realized.
According to an embodiment of the present disclosure, each of the waveguide gratings includes an optical waveguide, pi-phase shifted bragg grating cell. The optical waveguide is used for receiving and transmitting optical signals; the pi-phase shift Bragg grating unit is used for changing the thickness and the period length of the grating under the action of ultrasonic waves, so that the transmission and reflection spectrums of light in the grating waveguide are changed, and the change of a transmission light signal is caused.
According to the embodiment of the disclosure, pi-phase shift Bragg grating units are arranged on two sides of the optical waveguide, and the lengths and the numbers of the pi-phase shift Bragg grating units corresponding to different optical waveguides can be the same or different.
According to embodiments of the present disclosure, the optical waveguide width is between 50 nanometers and 20 micrometers, and the length of the optical waveguide provided with pi-phase shifted bragg grating cell regions is greater than 100 micrometers.
According to the embodiment of the disclosure, the pi-phase shift Bragg grating unit comprises at least two grating structure units, a resonant cavity is arranged between adjacent grating structure units, the period of each grating structure unit is between 100 nanometers and 100 micrometers, and the number of gratings in each grating structure unit is greater than 2.
According to an embodiment of the present disclosure, the bottom cladding layer comprises one or more materials having a lower refractive index than the waveguide grating layer.
According to the embodiment of the disclosure, the upper cladding layer comprises a single layer or multiple layers of flexible materials with low Young modulus between 100Pa and 3GPa, and by adjusting the acoustic impedance of the flexible materials, efficient transmission of signals from an ultrasonic wave emission source to the waveguide grating layer can be realized.
According to embodiments of the present disclosure, the thickness of the base layer is between 80 microns and 1000 microns, the thickness of the bottom cladding layer is between 200 nanometers and 50 microns, the thickness of the waveguide grating layer is between 50 nanometers and 20 microns, and the thickness of the upper cladding layer is between 200 nanometers and 100 microns.
According to an embodiment of the present disclosure, the ultrasonic wave to be detected originates from above the chip.
According to the embodiment of the disclosure, in the working state of the ultrasonic imaging chip based on the on-chip optical waveguide, light needs to be coupled into the optical waveguide, and the wavelength of the optical waveguide is between 400 nanometers and 10 micrometers.
(II) advantageous effects
As can be seen from the above technical solutions, the on-chip optical waveguide-based ultrasonic imaging chip of the present disclosure has at least one or a part of the following advantages:
(1) The ultrasonic detection of micron level accuracy is realized, the ultrasonic sensor has the characteristics of high sensitivity, wide bandwidth and high signal fidelity, and the problems of huge volume, complex system configuration, difficult photoacoustic alignment, low signal-to-noise ratio and the like of the traditional ultrasonic sensor are solved;
(2) The chip has the advantages of lower cost, easier integration and miniaturization, and can be compatible with other micro devices on the chip;
(3) The waveguide grating layer on the chip is provided with pi phase shift Bragg grating units, the unit structure is simple, the waveguide grating layer can be compatible with the traditional CMOS technology, the covering technology of the upper cladding layer is also very simple, and the waveguide grating layer has the characteristics of small technological difficulty, good etching consistency and high yield.
Drawings
Fig. 1 schematically illustrates a three-dimensional structure of an ultrasonic imaging chip based on an on-chip optical waveguide according to an embodiment of the present disclosure.
Fig. 2 schematically illustrates a schematic diagram of a single waveguide grating of an embodiment of the present disclosure.
Fig. 3 schematically illustrates a waveguide grating layer schematic of an arrangement of a row of waveguide gratings according to an embodiment of the present disclosure.
Fig. 4 schematically illustrates an optical waveguide end-face coupling structure schematic of an embodiment of the present disclosure.
Fig. 5 schematically illustrates a cross-sectional view of a waveguide grating of an embodiment of the present disclosure.
Fig. 6 schematically illustrates transmission spectra of an on-chip optical waveguide-based ultrasound imaging chip in accordance with an embodiment of the present disclosure.
FIG. 7 schematically illustrates a simulated TE of an embodiment of the present disclosure 0 A schematic diagram of normalized electric field intensity distribution in YZ plane when mode is incident at 1550 nm wavelength in x positive direction.
Detailed Description
The invention provides an ultrasonic imaging chip based on an on-chip optical waveguide, which has the characteristics of high stability, high Q value and easy integration under the condition of realizing high sensitivity, and can realize higher-performance ultrasonic imaging; has the advantages of higher integration level, better unit consistency and mass production.
The inventors have found in the practice of the present disclosure that a purely polymeric resonator is not the most ideal candidate for manufacturing miniaturized ultrasonic transducers. Silicon optical technology has wide prospects in replacing polymer resonators. The resonator manufactured by silicon can realize miniaturization, high sensitivity and high stability at the same time, and can realize low-cost production by using a CMOS compatible process, but the silicon material has a two-photon absorption effect, is not suitable for larger optical power, and has higher waveguide loss. In the aspect of ultrasonic imaging, due to the high acoustic impedance of silicon, the silicon is susceptible to clutter signals and SAW generated by reverberation, and the imaging accuracy and resolution are severely limited. In addition to silicon waveguides, materials such as silicon nitride, lithium niobate, aluminum nitride, etc. have received increasing attention as CMOS compatible optical thin film dielectric materials for optical applications. Taking silicon nitride as an example, the refractive index of the silicon nitride is between that of silicon dioxide and silicon, the silicon nitride has higher refractive index, larger energy band gap and a large-range transparent optical window, and the optical window covers the visible light to middle infrared band, so that the silicon nitride material has broadband low absorption characteristic, and the broadband low-loss function can be realized in an integrated photon device.
Therefore, the ultrasonic imaging chip based on the optical waveguide can be combined by adopting the inorganic optical film with high optical quality and the polymer film material with low Young modulus, combines the advantages of different materials, has the characteristics of high stability, high Q value and easy integration under the condition of realizing high sensitivity, and can realize higher-performance ultrasonic imaging.
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.
In an embodiment of the present disclosure, there is provided an on-chip optical waveguide-based ultrasonic imaging core, as shown in conjunction with fig. 1 to 3, including:
a base layer 100 for physical support of the chip;
a bottom cladding layer 200 disposed on the base layer 100 for limiting an optical field and reducing transmission loss;
a waveguide grating layer 300 disposed on the bottom cladding layer 200 and including a plurality of waveguide gratings; and
an upper cladding layer 400 disposed on the waveguide grating layer 300 for receiving and amplifying the ultrasonic signal;
the waveguide grating is used for transmitting light and modulating the light under the action of the ultrasonic signal.
According to an embodiment of the present disclosure, as shown in fig. 1 and 3, the waveguide grating layer 300 may include a plurality of waveguide gratings, as shown in fig. 2, each of which includes:
an optical waveguide 310 for receiving and transmitting optical signals;
the pi-phase shift bragg grating unit 320 is used for changing the thickness and period length of the grating under the action of ultrasonic waves, so that the transmission and reflection spectrums of light in the grating waveguide are changed, thereby causing the change of the transmission light signal.
According to the embodiment of the present disclosure, as shown in fig. 2, pi-phase-shifted bragg grating units 320 are disposed at both sides of the optical waveguide (at both sides along the axial direction of the optical waveguide), and the pi-phase-shifted bragg grating units corresponding to different optical waveguides may be the same or different in length and number. The pi-phase shifted bragg grating unit 320 includes at least two grating structure units, such as the grating structure unit 321a and the grating structure unit 321b in fig. 2; a resonant cavity 322 with a long period is arranged between adjacent grating structure units. The period of the grating structure units is between 100 nanometers and 100 micrometers, and the number of gratings G in each grating structure unit is more than 2. The pi-phase shifted bragg grating cell 320 has an overall length of 500 microns to 1000 microns.
According to an embodiment of the present disclosure, as shown in fig. 5, the optical waveguide 310 has a width w between 50 nanometers and 20 micrometers, and the optical waveguide length of the region where pi-phase shifted bragg grating cells are disposed is greater than 100 micrometers.
According to the embodiment of the disclosure, the thickness of the base layer 100 is between 80 micrometers and 1000 micrometers, the thickness of the bottom cladding layer 200 is between 200 nanometers and 50 micrometers, the thickness of the waveguide grating layer 300 is between 50 nanometers and 20 micrometers, and the thickness of the upper cladding layer 400 is between 200 nanometers and 100 micrometers.
According to an embodiment of the present disclosure, the base layer 100 is a silicon wafer; the material of the bottom cladding layer 200 comprises one or more materials having a lower refractive index than the waveguide grating layer; the preparation materials of the waveguide grating layer comprise one or more of silicon nitride, silicon and polymer materials;
according to an embodiment of the present disclosure, the upper cladding layer comprises a single layer or multiple layers of a flexible material having a low Young's modulus between 100Pa and 3GPa, such as PMMA, SU-8, polyimide, and the like. By adjusting the acoustic impedance of the flexible material, efficient transmission of signals from the ultrasonic wave emitting source to the waveguide grating layer can be achieved.
According to an embodiment of the present disclosure, the ultrasonic wave to be detected originates from above the chip. In operation, light needs to be coupled into the optical waveguide, with wavelengths between 400 nm and 10 microns.
According to an embodiment of the present disclosure, the waveguide grating layer 300 is used to influence the thickness and period of the grating structure unit by vibration of ultrasonic waves, thereby realizing a change in the wavelength of the light reflection peak; as shown in fig. 3, line imaging and plane imaging of ultrasonic waves can be achieved by arranging a plurality of waveguide gratings in parallel or in multiple layers.
According to the embodiment of the disclosure, as shown in fig. 4, the end face of the optical waveguide end face coupling structure is provided with a wedge-shaped connector 310a with a narrow front and a wide rear, so as to amplify the light spot, match the light spot mode of the optical fiber with the light spot mode of the optical waveguide 310, and reduce the loss in the process of light entering the chip from the waveguide.
According to the embodiment of the disclosure, as shown in fig. 5, the grating G is disposed on two sides of the cross section of the optical waveguide 310, the optical waveguide height h is 400 nm, and the optical waveguide width w is 1 micron; the grating G depth d is 50 nm to 150 nm.
According to the embodiment of the present disclosure, as shown in fig. 6, the transmission spectrum obtained by the ultrasonic imaging chip is simulated, it can be seen that there is a reflection peak at 1510 nm, and the reflection peak moves when being affected by external ultrasonic waves, so as to detect the ultrasonic waves. According to an embodiment of the present disclosure, as shown in fig. 7, it can be seen that light is concentrated on the waveguide and will penetrate up the upper cladding layer. When the upper cladding receives an ultrasonic signal, the optical field distribution on the waveguide is affected and reflected on the transmission spectrum as shown in fig. 6, resulting in a shift of the reflection peak.
Thus, embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It should be noted that, in the drawings or the text of the specification, implementations not shown or described are all forms known to those of ordinary skill in the art, and not described in detail. Furthermore, the above definitions of the elements and methods are not limited to the specific structures, shapes or modes mentioned in the embodiments, and may be simply modified or replaced by those of ordinary skill in the art.
From the foregoing description, those skilled in the art will readily recognize that the present disclosure is directed to an ultrasound imaging chip based on-chip optical waveguides.
In summary, the present disclosure provides an ultrasonic imaging chip based on an on-chip optical waveguide, which has high sensitivity to ultrasonic signals and can realize detection of weak signals. Because the chip is manufactured based on the semiconductor process, the chip has high integration level, can realize ultrasonic imaging with high spatial resolution, has very high pixel consistency, and can reduce the difficulty of post imaging processing.
It should also be noted that the foregoing describes various embodiments of the present disclosure. These examples are provided to illustrate the technical content of the present disclosure, and are not intended to limit the scope of the claims of the present disclosure. A feature of one embodiment may be applied to other embodiments by suitable modifications, substitutions, combinations, and separations.
It should be noted that in this document, having "an" element is not limited to having a single element, but may have one or more elements unless specifically indicated.
In addition, unless specifically stated otherwise, herein, "first," "second," etc. are used for distinguishing between multiple elements having the same name and not for indicating a level, a hierarchy, an order of execution, or a sequence of processing. A "first" element may occur together with a "second" element in the same component, or may occur in different components. The presence of an element with a larger ordinal number does not necessarily indicate the presence of another element with a smaller ordinal number.
In this context, the so-called feature A "or" (or) or "and/or" (and/or) feature B, unless specifically indicated, refers to the presence of B alone, or both A and B; the feature A "and" (and) or "AND" (and) or "and" (and) feature B, means that the nail and the B coexist; the terms "comprising," "including," "having," "containing," and "containing" are intended to be inclusive and not limited to.
Further, in this document, terms such as "upper," "lower," "left," "right," "front," "back," or "between" are used merely to describe relative positions between elements and are expressly intended to encompass situations of translation, rotation, or mirroring. In addition, in this document, unless specifically indicated otherwise, "an element is on another element" or similar recitation does not necessarily mean that the element contacts the other element.
Furthermore, unless specifically described or steps must occur in sequence, the order of the above steps is not limited to the list above and may be changed or rearranged according to the desired design. In addition, the above embodiments may be mixed with each other or other embodiments based on design and reliability, i.e. the technical features of the different embodiments may be freely combined to form more embodiments.
While the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be understood that the foregoing embodiments are merely illustrative of the invention and are not intended to limit the invention, and that any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the present disclosure are intended to be included within the scope of the present disclosure.
Claims (10)
1. An ultrasonic imaging chip based on an on-chip optical waveguide, comprising:
a base layer for physical support of the chip;
the bottom cladding layer is arranged on the substrate layer and is used for limiting an optical field and reducing transmission loss;
the waveguide grating layer is arranged on the bottom cladding layer and comprises a plurality of waveguide gratings; and
the upper cladding layer is arranged on the waveguide grating layer and is used for receiving and amplifying ultrasonic signals;
the waveguide grating is used for transmitting light and modulating the light under the action of the ultrasonic signal.
2. The on-chip optical waveguide based ultrasound imaging chip of claim 1, each of the waveguide gratings comprising:
an optical waveguide for receiving and transmitting an optical signal;
and the pi phase shift Bragg grating unit is used for changing the thickness and the period length of the grating under the action of ultrasonic waves, so that the transmission and reflection spectrums of light in the grating waveguide are changed, and the change of a transmission light signal is caused.
3. The ultrasonic imaging chip based on-chip optical waveguide according to claim 2, wherein the pi-phase-shift bragg grating units are arranged on two sides of the optical waveguide, and the pi-phase-shift bragg grating units corresponding to different optical waveguides can be the same or different in length and number.
4. An on-chip optical waveguide based ultrasound imaging chip as in claim 2, the optical waveguide width being between 50 nanometers and 20 microns, the optical waveguide length provided with pi-phase shifted bragg grating cell regions being greater than 100 microns.
5. The ultrasonic imaging chip based on-chip optical waveguide according to claim 2, wherein the pi-phase shift bragg grating unit comprises at least two grating structure units, a resonant cavity is arranged between adjacent grating structure units, the period of each grating structure unit is between 100 nanometers and 100 micrometers, and the number of gratings in each grating structure unit is greater than 2.
6. The on-chip optical waveguide based ultrasound imaging chip of claim 1, the bottom cladding layer comprising one or more materials having a lower refractive index than the waveguide grating layer.
7. The ultrasonic imaging chip based on the on-chip optical waveguide according to claim 1, wherein the upper cladding layer comprises a single layer or multiple layers of flexible materials with low Young's modulus between 100Pa and 3GPa, and the high-efficiency transmission of signals from an ultrasonic emission source to the waveguide grating layer can be realized by adjusting the acoustic impedance of the flexible materials.
8. The on-chip optical waveguide based ultrasonic imaging chip of claim 1, wherein the base layer has a thickness of between 80 and 1000 microns, the bottom cladding layer has a thickness of between 200 nanometers and 50 microns, the waveguide grating layer has a thickness of between 50 nanometers and 20 microns, and the upper cladding layer has a thickness of between 200 nanometers and 100 microns.
9. The on-chip optical waveguide based ultrasound imaging chip of claim 1, wherein the ultrasound to be detected originates from above the chip.
10. The ultrasonic imaging chip based on-chip optical waveguide according to claim 1, wherein in an operating state, light needs to be coupled into the optical waveguide, and the wavelength of the optical waveguide is between 400 nm and 10 μm.
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| CN202311027820.5A CN117029998A (en) | 2023-08-15 | 2023-08-15 | Ultrasonic imaging chip based on-chip optical waveguide |
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| CN202311027820.5A CN117029998A (en) | 2023-08-15 | 2023-08-15 | Ultrasonic imaging chip based on-chip optical waveguide |
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