CN117024825A - Polyethylene naphthalate film with high light transmittance and preparation method thereof - Google Patents
Polyethylene naphthalate film with high light transmittance and preparation method thereof Download PDFInfo
- Publication number
- CN117024825A CN117024825A CN202310832145.7A CN202310832145A CN117024825A CN 117024825 A CN117024825 A CN 117024825A CN 202310832145 A CN202310832145 A CN 202310832145A CN 117024825 A CN117024825 A CN 117024825A
- Authority
- CN
- China
- Prior art keywords
- film
- light transmittance
- polyethylene naphthalate
- pen
- silicone resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002834 transmittance Methods 0.000 title claims abstract description 93
- 229920006290 polyethylene naphthalate film Polymers 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 239000011112 polyethylene naphthalate Substances 0.000 claims abstract description 109
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims abstract description 100
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 88
- 229920002050 silicone resin Polymers 0.000 claims abstract description 53
- 238000000576 coating method Methods 0.000 claims abstract description 37
- 239000011248 coating agent Substances 0.000 claims abstract description 36
- 238000009832 plasma treatment Methods 0.000 claims abstract description 33
- 239000002904 solvent Substances 0.000 claims abstract description 32
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 claims abstract description 27
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims abstract description 27
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 claims abstract description 27
- -1 phenyl vinyl Chemical group 0.000 claims abstract description 25
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000009835 boiling Methods 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000003054 catalyst Substances 0.000 claims abstract description 10
- 238000001914 filtration Methods 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims abstract description 7
- 230000009471 action Effects 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 34
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 24
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 14
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 8
- 239000001488 sodium phosphate Substances 0.000 claims description 5
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 5
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 5
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 239000008096 xylene Substances 0.000 claims description 4
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 10
- 239000002994 raw material Substances 0.000 abstract description 4
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 3
- 231100000252 nontoxic Toxicity 0.000 abstract description 2
- 230000003000 nontoxic effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 136
- 239000008367 deionised water Substances 0.000 description 22
- 229910021641 deionized water Inorganic materials 0.000 description 22
- 235000019441 ethanol Nutrition 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 20
- 239000011247 coating layer Substances 0.000 description 13
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 10
- 230000003667 anti-reflective effect Effects 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 10
- 238000001035 drying Methods 0.000 description 10
- 238000005406 washing Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000011056 performance test Methods 0.000 description 7
- 239000012788 optical film Substances 0.000 description 6
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 5
- 235000017557 sodium bicarbonate Nutrition 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IUMSDRXLFWAGNT-UHFFFAOYSA-N Dodecamethylcyclohexasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 IUMSDRXLFWAGNT-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- DDJSWKLBKSLAAZ-UHFFFAOYSA-N cyclotetrasiloxane Chemical compound O1[SiH2]O[SiH2]O[SiH2]O[SiH2]1 DDJSWKLBKSLAAZ-UHFFFAOYSA-N 0.000 description 1
- HIHIPCDUFKZOSL-UHFFFAOYSA-N ethenyl(methyl)silicon Chemical compound C[Si]C=C HIHIPCDUFKZOSL-UHFFFAOYSA-N 0.000 description 1
- ZVJXKUWNRVOUTI-UHFFFAOYSA-N ethoxy(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(OCC)C1=CC=CC=C1 ZVJXKUWNRVOUTI-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/123—Treatment by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/0427—Coating with only one layer of a composition containing a polymer binder
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2367/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
- C08J2367/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2483/04—Polysiloxanes
- C08J2483/07—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
The invention discloses a polyethylene naphthalate film with high light transmittance and a preparation method thereof, wherein plasma treatment is carried out on the surface of a PEN film; dimethyl diethoxy silane, vinyl trimethoxy silane, phenyl trimethoxy silane, diphenyl dimethoxy silane and solvent are mixed and hydrolyzed and condensed under the action of a catalyst to prepare phenyl vinyl silicone resin sol; adopting a high boiling point solvent to replace ethanol in phenyl vinyl silicone resin sol, and filtering to obtain a high light transmission silicone resin solution; and (3) coating the high-light-transmittance silicon resin solution on the surface of the PEN film after plasma treatment, and baking. The PEN film has excellent light transmission performance, heat resistance and dimensional stability, and can be used as ITO base film, polarizer support film of liquid crystal display, and the like. The method is simple and easy to operate, and the used raw materials are nontoxic and easy to obtain, so that the PEN optical grade film with high cost performance can be prepared.
Description
Technical Field
The invention relates to the technical field of PEN optical films, in particular to a polyethylene naphthalate film with high light transmittance and a preparation method thereof.
Background
The optical transparent film is ubiquitous in life, and has wide application in the photoelectron fields of optical lenses, liquid crystal displays, solar back plates and the like. Transmittance is one of the most fundamental optical indices for evaluating the performance of optically transparent films. Among them, PEN film has important application prospect in photoelectric industry due to its excellent mechanical property, stable size, good chemical stability and weather resistance.
However, when a PEN film is used as an optical grade film, there is a problem in that light transmittance is low. Mainly caused by the following factors: on one hand, the PEN crystallization speed is high, and the crystallization area can influence the transmission of light, so that the light transmittance and the haze of the PEN film are influenced; on the other hand, the production of the optical film comprises the steps of base material synthesis, biaxial stretching, optical coating surface coating and the like, not only inherits the technical foundation of the general film, but also comprises more high-precision production technologies, and only a few countries and regions such as japan, korea and the like have production capacity at present. The common PEN film in the market has a plurality of varieties, but in the aspect of optical performance, the light transmittance which can be achieved by the PEN film is about 87%, and the use requirement of the high-end optical grade film is difficult to meet. Therefore, new technology is developed, PEN optical films with high light transmittance are developed to meet the diversified demands of the PEN optical films in the photoelectric industry, the application field of the PEN optical films is widened, and the PEN optical films have direct and practical social values.
Aiming at the problem of lower light transmittance of the PEN film, enterprises and universities and college specialists research the method for improving the light transmittance of the PEN film commonly used for reducing the crystallization rate in the PEN production process, and materials capable of improving the light transmittance are directly added in the PEN preparation process for blending and modifying the surface of the PEN film, but the method is limited by the domestic production technology level, and the light transmittance effect achieved by the method for improving the light transmittance by reducing the crystallization rate is limited; the direct addition of substances in the PEN matrix can change the mechanical properties, the mechanical properties and the like of the PEN film and make the preparation process more complex, so that the coating modification of the surface of the PEN film is the simplest and effective anti-reflection means at present.
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to provide a polyethylene naphthalate film with high light transmittance and a preparation method thereof.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a preparation method of a polyethylene naphthalate film with high light transmittance comprises the following steps:
carrying out plasma treatment on the surface of the PEN film;
dimethyl diethoxy silane, vinyl trimethoxy silane, phenyl trimethoxy silane, diphenyl dimethoxy silane and solvent are mixed and hydrolyzed and condensed under the action of a catalyst to prepare phenyl vinyl silicone resin sol; adopting a high boiling point solvent to replace ethanol in phenyl vinyl silicone resin sol, and filtering to obtain a high light transmission silicone resin solution;
and (3) coating the high-light-transmittance silicon resin solution on the surface of the PEN film after plasma treatment, and baking to obtain the polyethylene naphthalate film with high light transmittance.
The specific process of plasma treatment of PEN film surface is: the PEN film is cleaned, dried and then treated for 100-150s at a plasma treatment temperature of 20-40 ℃ and a chamber pressure of 9.0Pa and a discharge power of 100W.
The phenyl vinyl silicone resin sol is prepared by the following steps: according to the mass portion, 5-10 portions of dimethyl diethoxy silane, 1-5 portions of vinyl trimethoxy silane, 10-15 portions of phenyl trimethoxy silane, 1-5 portions of diphenyl dimethoxy silane, 0.01-1 portion of catalyst and 5-10 portions of water are mixed with 60-80 portions of solvent, the pH value is adjusted to be 4-6, and the mixture is reacted for 4-6 hours at the temperature of 40-70 ℃ to prepare the phenyl vinyl silicone resin sol.
The catalyst is one or two of hydrochloric acid and concentrated sulfuric acid.
The solvent is one or two of methanol, ethanol, ethyl acetate and acetone.
The ethanol in the phenyl vinyl silicone resin sol is replaced by a high boiling point solvent, and the high light transmittance silicone resin solution is obtained by filtering, and the method comprises the following steps: and (3) regulating the pH value of the phenyl vinyl silicone resin sol to be 6-8, then adding 60-80 parts of high-boiling point solvent, heating to 70-100 ℃ to evaporate ethanol, and filtering to obtain the high-light-transmittance silicone resin solution.
And adjusting the pH value of the phenyl vinyl silicone resin sol to 6-8 by adopting one or more of sodium carbonate, sodium bicarbonate, sodium phosphate and disodium hydrogen phosphate.
The high boiling point solvent is one or two of toluene and xylene.
The baking temperature is 100-140 ℃ and the baking time is 60-180s.
A high light transmittance polyethylene naphthalate film prepared according to the preparation method described above, the film having a light transmittance of 94-97% and a haze of 1.9-2.3%.
Compared with the prior art, the invention has the beneficial effects that: according to the invention, the surface roughness is improved by carrying out oxygen plasma treatment on the surface of the PEN film, a large number of polar oxygen-containing functional groups are generated and react with the phenyl vinyl silicone resin sol, so that the adhesiveness between the PEN film and the methyl vinyl silicone resin coating is further improved, and the permeability of the PEN film is improved by taking the phenyl vinyl silicone resin as an anti-reflection coating. The PEN film treated by oxygen plasma reacts with polar groups in the high-transmittance silicon resin in the baking process, so that the adhesive force between the base film and the coating is enhanced, the condition of uneven refractive index caused by tiny gaps generated between the anti-reflection coating and the base film is avoided, and the high-transmittance polyethylene naphthalate film is finally obtained. The phenyl vinyl silicone resin is used as the raw material, and the phenyl vinyl silicone resin is used as the raw material, so that the refractive index requirements of the PEN film on the anti-reflection coating can be met. The high-light-transmittance polyethylene naphthalate film prepared by the invention comprises a phenyl vinyl silicone resin anti-reflection coating with controllable refractive index, wherein the phenyl is a high refractive index group, the refractive index of organic silicon can be improved, and the vinyl can improve the crosslinking density and the mechanical strength and increase the viscosity. The PEN film has excellent light transmission performance, heat resistance and dimensional stability, and can be used as ITO base film, polarizer support film of liquid crystal display, and the like. The preparation method provided by the invention is simple and easy to operate, and the used raw materials are nontoxic and easy to obtain, so that the PEN optical grade film with high cost performance can be prepared, and the preparation method has a better commercial prospect.
Further, the light transmittance of the film is increased by coating the surface of the PEN base film with a high light transmittance silicone resin coating with a controllable refractive index. For the anti-reflection coating, the content of phenyl and vinyl is controlled, and the refractive index of the coating can be regulated and controlled to be matched with that of the base film, so that the anti-reflection purpose is achieved.
Drawings
In order to more clearly illustrate the technical solution of the embodiments of the present invention, the following briefly describes the drawings that are required to be used in the embodiments:
FIG. 1 is a structural formula of a high light transmittance silicone resin.
FIG. 2 is an ultraviolet-visible absorption spectrum of PEN antireflective films.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. The drawings illustrate preferred embodiments of the invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
The method of surface coating modification is adopted to improve the light transmittance of the film, and the essence is that the anti-reflection coating is used to generate film interference, and due to half-wave loss during film reflection, the interference between the reflected light at the interface of the PEN film and the coating and the reflected light at the interface of the coating and the air can be eliminated, so that complete transmission is realized, and the light transmittance is improved. The following formula should be satisfied among the single-layer film, the matrix material and the air which are completely anti-reflection:
wherein n is 0 Refractive index of air, n s Refractive index of matrix, n f To achieve a complete increase in refractive index of the coating.
The above formula reveals the mechanism of the coating antireflective base film. When the refractive index of the base film is a fixed value, the refractive index of the anti-reflection coating can be calculated according to the formula to obtain the fixed value, and the optimal light transmittance can be achieved only if the refractive indexes of the base film and the coating are matched and the reflected light is counteracted. PEN-based film refractive index n for use in the present invention s About 2.235, the best antireflective effect is calculated when the refractive index of the antireflective coating is 1.495.
The organic silicon resin has excellent performance, small Si-O bond rotation steric hindrance in a molecular chain and good segment flexibility, so that the organic silicon material has high light transmittance. It is worth noting that the refractive index control of the anti-reflection coating can be realized by designing the molecular chain structure of the silicone resin, such as the content of functional groups of phenyl, vinyl and the like, and the anti-reflection coating is very suitable for being used as the anti-reflection coating. Therefore, the PEN resin is used as a base film, the silicon resin with controllable refractive index is used as an anti-reflection coating, and the high-light-transmittance composite film is prepared.
The invention relates to a preparation method of a polyethylene naphthalate (PEN) film with high light transmittance, which comprises the following steps:
(1) The PEN base film surface treatment method comprises the following steps: and (3) placing the cut PEN base film in a vacuum drying oven to dry the moisture on the surface of the film, then placing the film in a plasma generator, and functionalizing the surface of the film under the nitrogen atmosphere condition to obtain the PEN film with surface treatment for later use. The PEN film surface is subjected to a plasma treatment to enhance its interfacial adhesion.
Specifically, the PEN film is ultrasonically cleaned by absolute ethyl alcohol and deionized water for 20min, and then is dried under the vacuum condition of 50 ℃ after being washed by deionized water. Then placing the mixture in a surface plasma processor, wherein the plasma treatment temperature is 20-40 ℃, the pressure in the chamber is 9.0Pa, the discharge power is 100W, and the treatment time is 100-150s.
(2) The preparation method of the anti-reflection coating comprises the following steps: dimethyl diethoxy silane (DD), vinyl trimethoxy silane (VTMS), phenyl trimethoxy silane (PTMS), diphenyl Dimethoxy Silane (DDS) and solvent are added into a three-neck flask to be mixed, and the phenyl vinyl silicone resin sol is prepared through hydrolytic condensation under the action of a catalyst. And neutralizing the acidity of the system by weak base, and replacing the solvent in the system by a high-boiling point solvent to separate out sodium salt dissolved in the system, and filtering out the sodium salt to obtain the high-light-transmittance silicone resin solution.
Specifically, according to the parts by weight, 5-10 parts of dimethyl diethoxy silane (DD), 1-5 parts of vinyl trimethoxy silane (VTMS), 10-15 parts of phenyl trimethoxy silane (PTMS), 1-5 parts of Diphenyl Dimethoxy Silane (DDS), 0.01-1 part of hydrochloric acid (with the mass concentration of 37%), 5-10 parts of water and 60-80 parts of solvent are taken and placed in a flask, the pH value of a reaction system is controlled to be 4-6, and the reaction is carried out for 4-6 hours at the temperature of 40-70 ℃, and the phenyl vinyl silicone resin sol is prepared by hydrolytic condensation under the action of a catalyst; then adding 0.1-3 parts of weak base into phenyl vinyl silicone sol, adjusting the pH value of the system to 6-8, adding 60-80 parts of high boiling point solvent into the system, heating to 70-100 ℃ to evaporate ethanol in the system, cooling, and filtering insoluble particulate matters in the ethanol to obtain an antireflective silicone solution, namely a high light transmittance silicone solution for later use. The antireflective silicone resin solution has a specific refractive index.
(3) The coating method of the anti-reflection coating comprises the following steps: the high light transmittance silicone resin solution is coated on the surface of the PEN film with the surface treatment at the speed of 500mm/s by a wet film preparation device with the thickness of 25 mu m, and the high light transmittance polyethylene naphthalate film is obtained by heat baking at the temperature of 100-140 ℃ for 60-180 s; the high-light-transmittance polyethylene naphthalate film comprises a PEN film and a coating layer positioned on the PEN film, wherein the coating layer is high-light-transmittance silicone resin, the structural formula is shown in figure 1, the thickness of the coating layer is 3-5 mu m, and the thickness of the high-light-transmittance polyethylene naphthalate film is 50-60 mu m.
Methoxy silane, triphenylethoxy silane, cyclotetrasiloxane and cyclohexasiloxane are organosiloxane monomers.
The catalyst is one or two of concentrated hydrochloric acid (mass concentration 37%) and concentrated sulfuric acid (mass concentration 98%) which are used simultaneously.
The solvent is one or two of methanol, ethanol, ethyl acetate and acetone.
The weak base is one or more of sodium carbonate, sodium bicarbonate, sodium phosphate and disodium hydrogen phosphate.
The high boiling point solvent is one or two of toluene and xylene.
According to the invention, the high light-transmitting silicone resin solution is coated on the upper surface of the polyethylene naphthalate (PEN) film, so that the purpose of anti-reflection can be achieved.
Example 1
The embodiment provides a preparation method of a polyethylene naphthalate (PEN) film with high light transmittance, which comprises the following steps:
(1) Ultrasonically cleaning the cut PEN film with absolute ethyl alcohol and deionized water for 20min, washing with deionized water, and drying at 50 ℃ under vacuum. And then placing the film in a surface plasma processor, wherein the plasma treatment temperature is 20 ℃, the pressure in the chamber is 9.0Pa, the discharge power is 100W, and the treatment time is 100s, so that the PEN base film subjected to surface plasma treatment is obtained.
(2) 7g of dimethyl diethoxy silane (DD), 3g of vinyl trimethoxy silane (VTMS), 13g of phenyl trimethoxy silane (PTMS), 3g of diphenyl dimethoxy silane, 0.05g of hydrochloric acid, 7g of water and 70g of ethanol are taken and placed in a flask, the pH value of a reaction system is controlled to be 5, 2g of sodium bicarbonate is added into the system after the reaction is carried out for 5 hours at 50 ℃, the pH value of the system is adjusted to be 7, 70g of high-boiling-point solvent dimethylbenzene is added into the system, the temperature is raised to 100 ℃, the ethanol in the system is distilled off, the temperature is lowered, insoluble particulate matters in the mixture are filtered, and the anti-reflection silicone resin solution is obtained for standby.
(3) The anti-reflection silicone resin solution is coated on the surface of the PEN base film treated by surface plasma by a wet film preparation device with the thickness of 25 mu m, and baked for 3min at the temperature of 120 ℃ to prepare a high-light-transmittance polyethylene naphthalate film; the high light transmittance polyethylene naphthalate film comprises a PEN film and a coating layer positioned on the PEN film, wherein the thickness of the coating layer is 3-5 mu m, and the thickness of the high light transmittance polyethylene naphthalate film is 50-60 mu m.
The PEN film products obtained in the above examples were subjected to performance tests. The results are shown in the following table:
| project | Transmittance of light | Haze degree |
| Unit (B) | ％ | ％ |
| Example 1 | 96 | 2.0 |
Referring to fig. 2, it can be seen that the silicone resin has an anti-reflection effect on the film, and the synthesized PEN film has the characteristic of high light transmittance.
Example 2
The embodiment provides a preparation method of a polyethylene naphthalate (PEN) film with high light transmittance, which comprises the following steps:
(1) Ultrasonically cleaning the cut PEN film with absolute ethyl alcohol and deionized water for 20min, washing with deionized water, and drying at 50 ℃ under vacuum. And then placing the film in a surface plasma processor, wherein the plasma treatment temperature is 40 ℃, the pressure in the chamber is 9.0Pa, the discharge power is 100W, and the treatment time is 120s, so that the PEN base film subjected to surface plasma treatment is obtained.
(2) 7g of dimethyl diethoxy silane (DD), 3g of vinyl trimethoxy silane (VTMS), 10g of phenyl trimethoxy silane (PTMS), 3g of Diphenyl Dimethoxy Silane (DDS), 0.05g of hydrochloric acid, 7g of water and 70g of ethanol are taken and placed in a flask, the pH value of a reaction system is controlled to be 4, 2g of sodium bicarbonate is added into the system after the reaction is carried out for 5 hours at 50 ℃ to adjust the pH value of the system to be 7, then 70g of high-boiling-point solvent dimethylbenzene is added into the system, the temperature is raised to 100 ℃ to distill out the ethanol in the system, and then the temperature is reduced, insoluble particulate matters in the mixture are filtered, so that the antireflective silicone resin solution is obtained for standby.
(3) The silicon resin coating is coated on the surface of the PEN base film treated by surface plasma by a wet film preparation device with the thickness of 25 mu m, and baked for 3min at the temperature of 120 ℃ to prepare a high-light-transmittance polyethylene naphthalate film; the high light transmittance polyethylene naphthalate film comprises a PEN film and a coating layer positioned on the PEN film, wherein the thickness of the coating layer is 3-5 mu m, and the thickness of the high light transmittance polyethylene naphthalate film is 50-60 mu m.
The PEN film products obtained in the above examples were subjected to performance tests. The results are shown in the following table:
| project | Transmittance of light | Haze degree |
| Unit (B) | ％ | ％ |
| Example 2 | 95 | 2.0 |
Example 3
The embodiment provides a preparation method of a polyethylene naphthalate (PEN) film with high light transmittance, which comprises the following steps:
(1) Ultrasonically cleaning the cut PEN film with absolute ethyl alcohol and deionized water for 20min, washing with deionized water, and drying at 50 ℃ under vacuum. And then placing the film in a surface plasma processor, wherein the plasma treatment temperature is 30 ℃, the pressure in the chamber is 9.0Pa, the discharge power is 100W, and the treatment time is 130s, so that the PEN base film subjected to surface plasma treatment is obtained.
(2) 7g of dimethyl diethoxy silane (DD), 3g of vinyl trimethoxy silane (VTMS), 13g of phenyl trimethoxy silane (PTMS), 1g of diphenyl dimethoxy silane, 0.05g of hydrochloric acid, 7g of water and 70g of ethanol are taken and placed in a flask, the pH value of a reaction system is controlled to be 6, 2g of sodium bicarbonate is added into the system after the reaction is carried out for 5 hours at 50 ℃, the pH value of the system is adjusted to be 7, then 70g of high-boiling-point solvent dimethylbenzene is added into the system, the temperature is raised to 100 ℃ to distill out the ethanol in the system, and then the temperature is lowered, insoluble particulate matters in the mixture are filtered, so that the antireflective silicone resin solution is obtained for standby.
(3) The silicon resin coating is coated on the surface of the PEN base film treated by surface plasma by a wet film preparation device with the thickness of 25 mu m, and baked for 3min at the temperature of 120 ℃ to prepare a high-light-transmittance polyethylene naphthalate film; the high light transmittance polyethylene naphthalate film comprises a PEN film and a coating layer positioned on the PEN film, wherein the thickness of the coating layer is 3-5 mu m, and the thickness of the high light transmittance polyethylene naphthalate film is 50-60 mu m.
The PEN film products obtained in the above examples were subjected to performance tests. The results are shown in the following table:
| project | Transmittance of light | Haze degree |
| Unit (B) | ％ | ％ |
| Example 3 | 96 | 2.3 |
Example 4
The embodiment provides a preparation method of a polyethylene naphthalate (PEN) film with high light transmittance, which comprises the following steps:
(1) Ultrasonically cleaning the cut PEN film with absolute ethyl alcohol and deionized water for 20min, washing with deionized water, and drying at 50 ℃ under vacuum. And then placing the film in a surface plasma processor, wherein the plasma treatment temperature is 25 ℃, the pressure in the chamber is 9.0Pa, the discharge power is 100W, and the treatment time is 140s, so as to obtain the PEN base film subjected to surface plasma treatment.
(2) 7g of dimethyl diethoxy silane (DD), 3g of vinyl trimethoxy silane (VTMS), 10g of phenyl trimethoxy silane (PTMS), 1g of Diphenyl Dimethoxy Silane (DDS), 0.05g of hydrochloric acid, 7g of water and 70g of ethanol are taken and placed in a flask, the pH value of a reaction system is controlled to be 6, after the reaction is carried out for 5 hours at 50 ℃, 2g of sodium bicarbonate is added into the system to adjust the pH value of the system to be 8, then 70g of high-boiling-point solvent dimethylbenzene is added into the system, the temperature is raised to 100 ℃, the ethanol in the system is distilled off, and then the temperature is reduced, insoluble particulate matters in the mixture are filtered, so that the antireflective silicone resin solution is obtained for standby.
(3) The silicon resin coating is coated on the surface of the PEN base film treated by surface plasma by a wet film preparation device with the thickness of 25 mu m, and baked for 3min at the temperature of 120 ℃ to prepare a high-light-transmittance polyethylene naphthalate film; the high light transmittance polyethylene naphthalate film comprises a PEN film and a coating layer positioned on the PEN film, wherein the thickness of the coating layer is 3-5 mu m, and the thickness of the high light transmittance polyethylene naphthalate film is 50-60 mu m.
The PEN film products obtained in the above examples were subjected to performance tests. The results are shown in the following table:
| project | Transmittance of light | Haze degree |
| Unit (B) | ％ | ％ |
| Example 4 | 94 | 2.1 |
Example 5
The embodiment provides a preparation method of a polyethylene naphthalate (PEN) film with high light transmittance, which comprises the following steps:
(1) Ultrasonically cleaning the cut PEN film with absolute ethyl alcohol and deionized water for 20min, washing with deionized water, and drying at 50 ℃ under vacuum. And then placing the film in a surface plasma processor, wherein the plasma treatment temperature is 35 ℃, the pressure in the chamber is 9.0Pa, the discharge power is 100W, and the treatment time is 125s, so as to obtain the PEN base film subjected to surface plasma treatment.
(2) 7g of dimethyl diethoxy silane (DD), 3g of vinyl trimethoxy silane (VTMS), 13g of phenyl trimethoxy silane (PTMS), 5g of Diphenyl Dimethoxy Silane (DDS), 0.05g of hydrochloric acid, 7g of water and 70g of ethanol are taken and placed in a flask, the pH value of a reaction system is controlled to be 5, 2g of sodium bicarbonate is added into the system after the reaction is carried out for 5 hours at 50 ℃ to adjust the pH value of the system to be 7, then 70g of high-boiling-point solvent dimethylbenzene is added into the system, the temperature is raised to 100 ℃ to distill out the ethanol in the system, and then the temperature is reduced, insoluble particulate matters in the mixture are filtered, so that the antireflective silicone resin solution is obtained for standby.
(3) The silicon resin coating is coated on the surface of the PEN base film treated by surface plasma by a wet film preparation device with the thickness of 25 mu m, and baked for 3min at the temperature of 120 ℃ to prepare a high-light-transmittance polyethylene naphthalate film; the high light transmittance polyethylene naphthalate film comprises a PEN film and a coating layer positioned on the PEN film, wherein the thickness of the coating layer is 3-5 mu m, and the thickness of the high light transmittance polyethylene naphthalate film is 50-60 mu m.
The PEN film products obtained in the above examples were subjected to performance tests. The results are shown in the following table:
| project | Transmittance of light | Haze degree |
| Unit (B) | ％ | ％ |
| Example 5 | 97 | 1.9 |
The light transmittance of examples 1-5 was 94-97% and haze was 1.9-2.3%.
Example 6
(1) Ultrasonically cleaning the cut PEN film with absolute ethyl alcohol and deionized water for 20min, washing with deionized water, and drying at 50 ℃ under vacuum. And then placing the film in a surface plasma processor, wherein the plasma treatment temperature is 30 ℃, the pressure in the chamber is 9.0Pa, the discharge power is 100W, and the treatment time is 100s, so that the PEN base film subjected to surface plasma treatment is obtained.
(2) 5g of dimethyl diethoxy silane (DD), 1g of vinyl trimethoxy silane (VTMS), 11g of phenyl trimethoxy silane (PTMS), 5g of diphenyl dimethoxy silane, 0.01g of hydrochloric acid, 5g of water and 60g of ethyl acetate are taken and placed in a flask, the pH value of a reaction system is controlled to be 4, a mixture of sodium phosphate and disodium hydrogen phosphate with the mass ratio of 1:1 is added into the system after the reaction is carried out for 6 hours at the temperature of 40 ℃, the pH value of the system is adjusted to be 8, then 60g of toluene with a high boiling point solvent is added into the system, the temperature is raised to 70 ℃ to distill out ethanol in the system, and then the temperature is reduced, insoluble particulate matters in the mixture are filtered, so that the anti-reflection silicone resin solution is obtained for standby.
(3) The anti-reflection silicone resin solution is coated on the surface of the PEN base film treated by surface plasma by a wet film preparation device with the thickness of 25 mu m, and baked for 3min at the temperature of 100 ℃ to prepare the high-light-transmittance polyethylene naphthalate film.
Example 7
(1) Ultrasonically cleaning the cut PEN film with absolute ethyl alcohol and deionized water for 20min, washing with deionized water, and drying at 50 ℃ under vacuum. And then placing the film in a surface plasma processor, wherein the plasma treatment temperature is 40 ℃, the pressure in the chamber is 9.0Pa, the discharge power is 100W, and the treatment time is 120s, so that the PEN base film subjected to surface plasma treatment is obtained.
(2) 8g of dimethyl diethoxy silane (DD), 2g of vinyl trimethoxy silane (VTMS), 12g of phenyl trimethoxy silane (PTMS), 4g of diphenyl dimethoxy silane, 0.07g of concentrated sulfuric acid, 8g of water and 75g of methanol are taken and placed in a flask, the pH value of a reaction system is controlled to be 5, sodium phosphate is added into the system after the reaction is carried out for 4 hours at 70 ℃, the pH value of the system is adjusted to be 8, then 80g of high boiling point solvent (mixture of toluene and xylene with the mass ratio of 1:1) is added into the system, ethanol in the system is distilled out after the temperature is raised to 80 ℃, and insoluble particulate matters in the mixture are filtered after the temperature is lowered, thus obtaining the anti-reflection silicone resin solution for standby.
(3) The anti-reflection silicone resin solution is coated on the surface of the PEN base film treated by surface plasma by a wet film preparation device with the thickness of 25 mu m, and baked for 1min at 140 ℃ to prepare the high-light-transmittance polyethylene naphthalate film.
Example 8
(1) Ultrasonically cleaning the cut PEN film with absolute ethyl alcohol and deionized water for 20min, washing with deionized water, and drying at 50 ℃ under vacuum. And then placing the film in a surface plasma processor, wherein the plasma treatment temperature is 20 ℃, the pressure in the chamber is 9.0Pa, the discharge power is 100W, and the treatment time is 150s, so that the PEN base film subjected to surface plasma treatment is obtained.
(2) 10g of dimethyl diethoxy silane (DD), 5g of vinyl trimethoxy silane (VTMS), 15g of phenyl trimethoxy silane (PTMS), 2g of diphenyl dimethoxy silane, 1g of hydrochloric acid, 10g of water and 80g of solvent (mixture of acetone and ethanol in mass ratio of 1:1) are taken and placed in a flask, the pH value of a reaction system is controlled to be 6, sodium carbonate is added into the system after the reaction is carried out for 5 hours at 60 ℃, the pH value of the system is adjusted to be 7, then 75g of high-boiling solvent dimethylbenzene is added into the system, the temperature is raised to 90 ℃ to distill out ethanol in the system, and then the temperature is reduced, insoluble particulate matters in the mixture are filtered, so that the anti-reflection silicone resin solution is obtained for standby.
(3) The antireflective silicone resin solution is coated on the PEN base film surface treated by surface plasma by a wet film preparation device with the thickness of 25 mu m, and baked for 100 seconds at the temperature of 130 ℃ to prepare the high-light transmittance polyethylene naphthalate film.
Comparative example 1
The comparative example provides a method for preparing a polyethylene naphthalate (PEN) film with high light transmittance, comprising the following steps:
(1) Ultrasonically cleaning the cut PEN film with absolute ethyl alcohol and deionized water for 20min, washing with deionized water, and drying at 50 ℃ under vacuum. And then placing the material in a surface plasma processor, wherein the plasma treatment temperature is 20-40 ℃, the pressure in the chamber is 9.0Pa, the discharge power is 100W, and the treatment time is 100-150s, so as to obtain the PEN base film subjected to surface plasma treatment.
The PEN film products obtained in the above comparative examples were subjected to performance tests. The results are shown in the following table:
| project | Transmittance of light | Haze degree |
| Unit (B) | ％ | ％ |
| Comparative example 1 | 90 | 3.4 |
Comparative example 2
The comparative example provides a method for preparing a polyethylene naphthalate (PEN) film with high light transmittance, comprising the following steps:
(1) Ultrasonically cleaning the cut PEN film with absolute ethyl alcohol and deionized water for 20min, washing with deionized water, and drying at 50 ℃ under vacuum. And then placing the material in a surface plasma processor, wherein the plasma treatment temperature is 20-40 ℃, the pressure in the chamber is 9.0Pa, the discharge power is 100W, and the treatment time is 100-150s, so as to obtain the PEN base film subjected to surface plasma treatment.
(2) 7g of dimethyl diethoxy silane (DD), 3g of vinyl trimethoxy silane (VTMS), 13g of phenyl trimethoxy silane (PTMS), 3g of diphenyl dimethoxy silane, 0.05g of hydrochloric acid, 7g of water and 70g of ethanol are taken in a flask, the pH value of a reaction system is controlled to be 5, and the reaction is carried out for 5 hours at 50 ℃ to obtain a resin solution for standby.
(3) The silicone resin coating is coated on the surface of the PEN base film treated by surface plasma by a wet film preparation device with the thickness of 25 mu m, and baked for 3min at the temperature of 120 ℃ to prepare the high-light-transmission PEN film with the coating thickness of 3-5 mu m, and the final composite film thickness is 50-60 mu m.
The PEN film products obtained in the above comparative examples were subjected to performance tests. The results are shown in the following table:
| project | Transmittance of light | Haze degree |
| Unit (B) | ％ | ％ |
| Comparative example 2 | 89 | 2.9 |
According to the above examples 1-5 and comparative examples 1-2, the phenyl vinyl silicone resin has an obvious anti-reflection effect on the PEN base film, and the obtained product has good light transmittance and lower haze, and the preparation method is simple, easy to operate and convenient for industrialized mass production of the optical transparent film with high light transmittance.
The foregoing is illustrative of the preferred embodiments of the present invention and is not to be construed as limiting the claims. The present invention is not limited to the above embodiments, and the specific structure thereof is allowed to vary. It is intended that all such variations as fall within the scope of the appended claims.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Claims (10)
1. The preparation method of the polyethylene naphthalate film with high light transmittance is characterized by comprising the following steps of:
carrying out plasma treatment on the surface of the PEN film;
dimethyl diethoxy silane, vinyl trimethoxy silane, phenyl trimethoxy silane, diphenyl dimethoxy silane and solvent are mixed and hydrolyzed and condensed under the action of a catalyst to prepare phenyl vinyl silicone resin sol; adopting a high boiling point solvent to replace ethanol in phenyl vinyl silicone resin sol, and filtering to obtain a high light transmission silicone resin solution;
and (3) coating the high-light-transmittance silicon resin solution on the surface of the PEN film after plasma treatment, and baking to obtain the polyethylene naphthalate film with high light transmittance.
2. The method for preparing a polyethylene naphthalate film with high light transmittance according to claim 1, wherein the specific process of plasma treatment of the surface of the PEN film is as follows: the PEN film is cleaned, dried and then treated for 100-150s at a plasma treatment temperature of 20-40 ℃ and a chamber pressure of 9.0Pa and a discharge power of 100W.
3. The method for preparing a high light transmittance polyethylene naphthalate film according to claim 1, wherein the phenyl vinyl silicone sol is prepared by the following steps: according to the mass portion, 5-10 portions of dimethyl diethoxy silane, 1-5 portions of vinyl trimethoxy silane, 10-15 portions of phenyl trimethoxy silane, 1-5 portions of diphenyl dimethoxy silane, 0.01-1 portion of catalyst and 5-10 portions of water are mixed with 60-80 portions of solvent, the pH value is adjusted to be 4-6, and the mixture is reacted for 4-6 hours at the temperature of 40-70 ℃ to prepare the phenyl vinyl silicone resin sol.
4. The method for preparing a high light transmittance polyethylene naphthalate film according to claim 1 or 3, wherein the catalyst is one or both of hydrochloric acid and concentrated sulfuric acid.
5. The method for producing a high light transmittance polyethylene naphthalate film according to claim 1 or 3, wherein the solvent is one or two of methanol, ethanol, ethyl acetate and acetone.
6. The method for preparing a high light transmittance polyethylene naphthalate film according to claim 1, wherein the high light transmittance silicone resin solution is obtained by substituting ethanol in a phenyl vinyl silicone resin sol with a high boiling point solvent and filtering, comprising the steps of: and (3) regulating the pH value of the phenyl vinyl silicone resin sol to be 6-8, then adding 60-80 parts of high-boiling point solvent, heating to 70-100 ℃ to evaporate ethanol, and filtering to obtain the high-light-transmittance silicone resin solution.
7. The method for preparing a high light transmittance polyethylene naphthalate film according to claim 6, wherein the pH of the phenylvinyl silicone resin sol is adjusted to 6-8 by using one or more of sodium carbonate, sodium bicarbonate, sodium phosphate and disodium hydrogen phosphate.
8. The method for producing a high light transmittance polyethylene naphthalate film according to claim 1, wherein the high boiling point solvent is one or both of toluene and xylene.
9. The method for producing a high light transmittance polyethylene naphthalate film according to claim 1, wherein the baking temperature is 100 to 140 ℃ for 60 to 180 seconds.
10. A high light transmittance polyethylene naphthalate film prepared according to any one of claims 1 to 9, wherein the film has a light transmittance of 94 to 97% and a haze of 1.9 to 2.3%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310832145.7A CN117024825A (en) | 2023-07-07 | 2023-07-07 | Polyethylene naphthalate film with high light transmittance and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310832145.7A CN117024825A (en) | 2023-07-07 | 2023-07-07 | Polyethylene naphthalate film with high light transmittance and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117024825A true CN117024825A (en) | 2023-11-10 |
Family
ID=88601260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310832145.7A Pending CN117024825A (en) | 2023-07-07 | 2023-07-07 | Polyethylene naphthalate film with high light transmittance and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117024825A (en) |
-
2023
- 2023-07-07 CN CN202310832145.7A patent/CN117024825A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107995907B (en) | Scratch-resistant easy-to-clean coating, method for the production thereof and use thereof | |
| KR102610317B1 (en) | Novel carbosiloxane polymer composition, method of making and use thereof | |
| US6177131B1 (en) | Method of making an anti-reflection coating | |
| KR101440567B1 (en) | A solar cell including a silicone resin layer | |
| RU2732134C2 (en) | Method of producing a coated polymer substrate having low emissive capacity | |
| CN108893054B (en) | Easy-to-clean glass liquid and preparation method thereof, easy-to-clean glass and preparation method and application thereof | |
| CN102190956B (en) | Antireflection coating material and antireflection film containing same | |
| CN114292485B (en) | Antibacterial adhesion-resistant hydrophobic anti-reflection material, and preparation method and application thereof | |
| CN112094422B (en) | High-light-transmittance barrier film and application thereof | |
| JP2009544798A (en) | Silicone resin, silicone composition and coated substrate | |
| CN111410435A (en) | Anti-fingerprint glass coating with high friction coefficient and preparation method thereof | |
| CN113185888B (en) | Preparation method of fluorosilicone coating with scratch resistance, fingerprint resistance and high light transmittance | |
| CN117024825A (en) | Polyethylene naphthalate film with high light transmittance and preparation method thereof | |
| CN104101918B (en) | A kind of optical anti-reflective film and preparation method thereof and optical module | |
| JPS62101636A (en) | Surface-protecting material | |
| CN111430473B (en) | Functional film and application thereof | |
| JP2001031866A (en) | Polyimide composition and substrate for solar cell produced by using the composition | |
| CN116779705B (en) | Photovoltaic module with anti-dazzle composite film | |
| CN111875804A (en) | Hole sealing agent, preparation method thereof and antireflection coating liquid | |
| CN112794649B (en) | Antifogging film and preparation method thereof | |
| CN114232345B (en) | Ultraviolet radiation resistant waterproof protective material and production process thereof | |
| CN117567937A (en) | Organosilicon anti-reflection coating liquid, anti-reflection glass and preparation method | |
| CN115979428B (en) | Protective cover for infrared body temperature detector and preparation method thereof | |
| CN108870783A (en) | A kind of preparation process for the solar thermal collector film improving solar heat efficiency | |
| CN216972402U (en) | Hardened belt antistatic acrylic protective film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |