CN117012603A

CN117012603A - Apparatus and method for processing substrate using plasma

Info

Publication number: CN117012603A
Application number: CN202210469371.9A
Authority: CN
Inventors: 金东勋; 裵多顺; 朴玩哉; 李城吉; 严永堤; 李知桓; 吴东燮; 卢明燮; 丘峻宅; 金杜里
Original assignee: Semes Co Ltd
Current assignee: Semes Co Ltd
Priority date: 2022-04-28
Filing date: 2022-04-28
Publication date: 2023-11-07

Abstract

Provided are a substrate processing apparatus and method capable of maximizing uniformity of plasma. The substrate processing method includes: provided is a substrate processing apparatus including: a processing space for processing a substrate; and a plasma generation module that generates plasma for processing the substrate, the plasma generation module comprising: a plurality of first electrodes arranged side by side in a first direction; a plurality of second electrodes arranged side by side with each other in a second direction different from the first direction; and an array comprising a plurality of microplasma cells connected to a plurality of first electrodes and a plurality of second electrodes; providing a process gas to the plurality of microplasma cells and a reactant gas to the process space; and varying the amount of radicals of the plasma generated at the first microplasma unit and the second microplasma unit by providing a first energy of a first magnitude to the first microplasma unit and a second energy to the second microplasma unit.

Description

Apparatus and method for processing substrate using plasma

Technical Field

The present invention relates to a substrate processing apparatus and method using plasma.

Background

In manufacturing a semiconductor device or a display device, various processes (e.g., etching, ashing, ion implantation, cleaning, etc.) using plasma may be used. Substrate processing apparatuses using plasma can be classified into CCP (Capacitively Coupled Plasma: capacitively coupled plasma) type and ICP (Inductively Coupled Plasma: inductively coupled plasma) type according to the manner of plasma generation. The CCP type generates plasma by configuring two electrodes to face each other within a chamber and applying an RF signal to either or both of the two electrodes to form an electric field within the chamber. On the other hand, the ICP type generates plasma by disposing one or more coils in a chamber and applying an RF signal to the coils to induce an electromagnetic field in the chamber.

Disclosure of Invention

Problems to be solved by the invention

On the other hand, in the case of a conventional substrate processing apparatus using plasma (for example, RDC (Rad ical Dry Clean: radical dry cleaning) equipment), it is intended to improve uniformity (uniformity) of plasma by adjusting process parameters such as gas flow rate, ratio, pressure, frequency and magnitude of RF power. Nevertheless, since the generated plasma may be of an asymmetric (asymmetric) shape, a multi-zone temperature control device is additionally provided in the chuck (chuck), or a buffer space for diffusion of radicals or reaction gases is secured. Therefore, the structure of the substrate processing apparatus using plasma becomes complicated, and the volume increases.

The invention provides a substrate processing apparatus capable of maximizing uniformity of plasma.

Another object of the present invention is to provide a substrate processing method capable of maximizing plasma uniformity.

The problems of the present invention are not limited by the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

Means for solving the problems

An aspect of the substrate processing apparatus according to the present invention for solving the above-described problems includes: disposing a processing space of the substrate; and a plasma generation module that generates plasma for processing the substrate, the plasma generation module comprising: a plurality of first electrodes arranged side by side with each other in a first direction; a plurality of second electrodes arranged side by side with each other in a second direction different from the first direction; and an array including a plurality of microplasma cells, each microplasma cell being connected to a corresponding first electrode and a corresponding second electrode and generating a plasma according to a first voltage applied to the corresponding first electrode and a second voltage applied to the corresponding second electrode.

Another aspect of the substrate processing apparatus according to the present invention for solving the above-described problems includes: a plasma forming space; a first plate disposed above the plasma forming space and having an inlet for introducing a process gas into the plasma forming space; a second plate disposed below the plasma forming space and having a discharge port for filtering a part of the components of the plasma formed in the plasma forming space; a first electrode provided on the first plate and extending long in a first direction; a second electrode provided on the second plate and extending long in a second direction different from the first direction; and a bypass line penetrating the plasma forming space to connect the first plate and the second plate and to transfer an unexcited reaction gas.

An aspect of the substrate processing method according to the present invention for solving the other problem described above provides a substrate processing apparatus including: a processing space for processing a substrate; and a plasma generation module that generates plasma for processing the substrate, the plasma generation module comprising: a plurality of first electrodes arranged side by side with each other in a first direction; a plurality of second electrodes arranged side by side with each other in a second direction different from the first direction; and an array comprising a plurality of microplasma cells connected to the plurality of first electrodes and the plurality of second electrodes; providing a process gas to the plurality of microplasma cells and a reactant gas to the process space; and differentiating the radical amount of the plasma generated at the first microplasma unit from the radical amount of the plasma generated at the second microplasma unit by supplying a first energy of a first magnitude to a first microplasma unit of the plurality of microplasma units and supplying a second energy of a second magnitude different from the first magnitude to a second microplasma unit.

The details of other embodiments are included in the detailed description and the accompanying drawings.

Drawings

Fig. 1 is a sectional view for explaining a substrate processing apparatus according to a first embodiment of the present invention.

Fig. 2 is a plan view for explaining the plasma generating module of fig. 1.

Fig. 3 is a plan view showing an enlarged region a of fig. 2.

Fig. 4 is a perspective view for explaining the microplasma unit MPC1 of fig. 3.

Fig. 5 is a plan view for explaining a substrate processing apparatus according to a second embodiment of the present invention.

Fig. 6 is a plan view for explaining a substrate processing apparatus according to a third embodiment of the present invention.

Fig. 7 is a plan view for explaining a substrate processing apparatus according to a fourth embodiment of the present invention.

Fig. 8 is a plan view for explaining a substrate processing apparatus according to a fifth embodiment of the present invention.

Fig. 9 illustrates a substrate processing method according to a first embodiment of the present invention.

Fig. 10 illustrates a substrate processing method according to a second embodiment of the present invention.

Fig. 11 illustrates a substrate processing method according to a third embodiment of the present invention.

Fig. 12 illustrates a substrate processing method according to a fourth embodiment of the present invention.

Fig. 13 illustrates a substrate processing method according to a fifth embodiment of the present invention.

Fig. 14 illustrates a substrate processing method according to a sixth embodiment of the present invention.

Detailed Description

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention and methods of accomplishing the same may become apparent by reference to the embodiments described hereinafter in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be embodied in various forms different from each other, which are provided only for the purpose of completing the disclosure of the present invention and informing a person having ordinary skill in the art of the present invention as a whole, and the present invention is limited only by the scope of the claims. Throughout the specification, like reference numerals refer to like structural elements.

As shown in the figures, the terms "lower", "upper", and the like are spatially relative terms, and can be used to easily describe the correlation between one element or structural element and another element or structural element. Spatially relative terms are to be understood as comprising, in addition to the directions as illustrated in the figures, also the directions of the elements which differ from each other in use or in action. For example, when an element shown in the drawings is turned over, elements described as "lower" or "lower" of other elements may be placed "upper" of the other elements. Thus, the exemplary term "below" may include both below and above directions. The elements may also be oriented in other directions, whereby spatially relative terms may be construed in terms of orientation.

Although the terms first, second, etc. may be used to describe various elements, structural elements and/or sections, these elements, structural elements and/or sections should not, of course, be limited by these terms. These terms are only used to distinguish one element, component, or section from another element, component, or section. Therefore, the first element, the first structural element, or the first portion mentioned below may be the second element, the second structural element, or the second portion, of course, within the technical idea of the present invention.

Fig. 1 is a sectional view for explaining a substrate processing apparatus according to a first embodiment of the present invention. Fig. 2 is a plan view for explaining the plasma generating module of fig. 1. Fig. 3 is a plan view showing an enlarged region a of fig. 2. Fig. 4 is a perspective view for explaining the microplasma unit MPC1 of fig. 3.

First, referring to fig. 1, a substrate processing apparatus 1 according to a first embodiment of the present invention includes a process chamber 100, a support module 200, a plasma generating module 300, a gas supply module 500, and the like.

The process chamber 100 internally provides a processing space 101 for processing a substrate W. The process chamber 100 may be circular, cylindrical in shape. The process chamber 100 is provided using a metallic material. For example, the process chamber 100 may be provided using an aluminum material. An opening 130 is formed in one sidewall of the process chamber 100. The opening 130 serves as an entrance into which the substrate W can be carried in and out. The entrance can be opened and closed by a door. An exhaust port 102 is provided at the bottom surface of the process chamber 100. The exhaust port 102 functions as an exhaust port for exhausting byproducts generated in the processing space 101 to the outside of the process chamber 100. The exhaust port 102 is connected to an exhaust line 131. The exhausting action is achieved by a pump.

The support module 200 is provided in the processing space 101 and supports the substrate W. The support module 200 may be an electrostatic chuck (Electrostatic Chuck) for supporting the substrate W by an electrostatic force, but is not limited thereto. The electrostatic chuck may include a dielectric plate on the upper surface of which the substrate W is placed, an electrode provided in the dielectric plate and providing an electrostatic force so as to attract the substrate W to the dielectric plate, a heater provided in the dielectric plate and heating the substrate W to perform temperature control of the substrate W, and the like.

The gas supply module 500 supplies a gas required for substrate processing to the plasma generation module 300 and/or the processing space 101.

Specifically, a first gas supply module 510 provides process gases (process gas) to a plurality of microplasma units MPCs. The process gas may include, for example, an inert gas (inert gas) such as Ar, he, or the like, and a gas (C) composed of a compound containing at least one of C, N, F _x F _y 、N _x F _y Etc.).

The second gas supply module 520 supplies a reaction gas (reaction gas) to the process space 101. The reactant gases may bypass the microplasma unit MPC and be supplied directly to the process space 101 in a state of not being excited into a plasma. Such a reaction gas may include, for example, a gas (H2, NH3, etc.) composed of a compound containing at least one of H, N.

The plasma generation module 300 generates plasma using a process gas, and supplies at least a part of components (e.g., radicals) in the plasma for processing the substrate W to the processing space 101.

Here, the plasma generating module is specifically described with reference to fig. 1 and 2. For ease of illustration, in fig. 2, microplasma cell MPC is not shown, but is shown with the configuration of the plurality of first electrodes TE and the plurality of second electrodes BE predominated.

The plasma generation module 300 includes a plurality of first electrodes TE, a plurality of second electrodes BE, an array including a plurality of microplasma cells MPC.

The plurality of first electrodes TE are arranged side by side with each other in the first direction X. Each of the first electrodes TE is arranged to extend long in the second direction Y. The plurality of first electrodes TE are connected to a first power source 310 through a first switching box 312.

The plurality of second electrodes BE are arranged side by side with each other in the second direction Y. Each of the second electrodes BE is arranged to extend long in the first direction X. The plurality of first electrodes TE are connected to the second power source 320 through the second switching box 322.

As exemplarily shown in fig. 2, the first switch box 312 includes a plurality of first switches SW11 to SW19, and each of the first switches SW11 to SW19 is connected to a corresponding first electrode TE. The second switch box 322 includes a plurality of second switches SW21 to SW29, and each of the second switches SW21 to SW29 is connected to a corresponding second electrode BE.

The microplasma cells MPCs are arranged in an array in the first direction X and the second direction Y, and each microplasma cell MPC is connected to the corresponding first electrode TE and second electrode BE. Although not shown in fig. 2, the microplasma unit MPC is located at the area where the first electrode TE and the second electrode BE intersect. For example, each microplasma cell MPC may have a corresponding first electrode TE connected to one side (e.g., the upper side) and a corresponding second electrode BE connected to the other side (e.g., the lower side).

The first switching box 312 receives the supply of the first selection signal CS1, and the second switching box 322 receives the supply of the second selection signal CS 2. For example, if the first selection signal CS1 is a signal to select the first switch SW14 (i.e., a signal to turn on the first switch SW 14) and the second selection signal CS2 is a signal to select the second switch SW23 (i.e., a signal to turn on the second switch SW 23), the microplasma cell MPC where the first electrode TE connected to the first switch SW14 and the second electrode BE connected to the second switch SW23 intersect is selected. Since the first switch SW14 is turned on, a first voltage is supplied from the first power supply 310 to the selected microplasma unit MPC, and since the second switch SW23 is turned on, a second voltage is supplied from the second power supply 320 to the selected microplasma unit MPC, whereby the selected microplasma unit MPC generates plasma using the process gas.

On the other hand, in fig. 2, the microplasma cells MPC are illustrated as being arranged in a circular shape, but the present invention is not limited thereto. That is, the microplasma units MPC may also be arranged in a rectangular shape (rectangle).

Here, a specific shape of the microplasma unit MPC is described with reference to fig. 3 and 4.

As shown in fig. 3, the plurality of first electrodes TE1, TE2 are arranged side by side with each other in the first direction X, and the plurality of second electrodes BE1, BE2 are arranged side by side with each other in the second direction Y.

The first microplasma cell MPC1 is disposed in a region where the first electrode TE1 and the second electrode BE1 intersect, the second microplasma cell MPC2 is disposed in a region where the first electrode TE1 and the second electrode BE2 intersect, the third microplasma cell MPC3 is disposed in a region where the first electrode TE2 and the second electrode BE1 intersect, and the fourth microplasma cell MPC4 is disposed in a region where the first electrode TE2 and the second electrode BE2 intersect.

As shown in fig. 4, the first microplasma unit MPC1 includes a plasma forming space 16, a first plate 12, a second plate 13, and the like.

The first plate 12 is disposed on one side of the plasma forming space 16. The first plate 12 may be made of a dielectric having non-conductive properties (e.g., Y ₂ O ₃ 、Al ₂ O ₃ ) The composition is formed.

In addition, a first electrode TE1 corresponding to the first microplasma unit MPC1 may be provided on the first plate 12, and an introduction port 31 for introducing a process gas into the plasma formation space 16 may be formed.

The first electrode TE1 may be provided inside the first plate 12 or may be provided on a surface (for example, an upper surface) of the first plate 12. As shown, the first electrode TE1 may be disposed to pass through the center of the plasma forming space 16, but is not limited thereto. That is, the plasma forming space 16 may be disposed so as to be offset to one end.

As shown in fig. 4, the first electrode TE1 may include two bus electrodes TE _x 、TE _y . Two bus electrodes TE _x 、TE _y May be arranged alongside each other in the first direction X. However, the shape and/or structure of the first electrode TE1 may be different according to the voltage application manner.

The second plate 13 is disposed on the other side of the plasma forming space 16. The second plate 13 may be made of a dielectric having non-conductive propertiesFor example, Y ₂ O ₃ 、Al ₂ O ₃ ) The composition is formed.

The second plate 13 is provided with a second electrode BE1 corresponding to the first microplasma unit MPC1, and a discharge port 51 for filtering a part of the components of the plasma formed in the plasma forming space 16 is formed. The exhaust port 51 can block ion components in the formed plasma and pass free radicals in the plasma. The ion components in the plasma may be blocked by determining the size of the discharge port 51 in consideration of the sheath (shaping) thickness of the formed plasma. For example, in the case where the discharge port 51 is circular, if it is determined that the radius of the discharge port 51 is smaller than the thickness of the sheath layer, the ion components in the plasma may not pass through the discharge port 51.

The second electrode BE1 may BE disposed inside the second plate 13, or may BE disposed on other surfaces (e.g., lower surfaces) of the second plate 13. As shown, the second electrode BE1 may BE configured to pass through the center of the plasma forming space 16, but is not limited thereto. That is, the plasma forming space 16 may be disposed so as to be offset to one end.

In addition, a bypass line 41 may be provided in the first microplasma unit MPC 1. The bypass line 41 penetrates the plasma forming space 16 to connect the first plate 12 and the second plate 13. The reactant gas may be provided to the processing space by bypassing the first microplasma unit MPC1 via bypass line 41 (see 101 of fig. 1). By providing the bypass line 41 so as to penetrate the first microplasma unit MPC1, the space can be reduced compared to the case where the bypass line is provided separately from the first microplasma unit MPC 1.

Referring again to fig. 3, the introduction ports 31, 32 are arranged on both sides of the first electrode TE1 centering on the first electrode TE 1. The introduction ports 33 and 34 are arranged on both sides of the first electrode TE2 centering on the first electrode TE 2. Similarly, the bypass lines 41, 42 are arranged on both sides of the first electrode TE1 centering on the first electrode TE 1. The bypass lines 43 and 44 are arranged on both sides of the first electrode TE2 with the center of the first electrode TE 2.

The introduction ports 31 and 33 are disposed on both sides of the second electrode BE1 centering on the second electrode BE 1. The introduction ports 32 and 34 are arranged on both sides of the second electrode BE2 centering on the second electrode BE 2. Similarly, the bypass lines 41, 43 are arranged on both sides of the second electrode BE1 centering on the second electrode BE 1. The bypass lines 42 and 44 are arranged on both sides of the second electrode BE2 centering on the second electrode BE 2.

Thus, in each microplasma unit (e.g., MPC 1), two inlets 31 may be located diagonally and two bypass lines 41 may be located diagonally. By such arrangement, the plasma can be uniformly formed in the plasma forming space 16, and the radical component in the plasma can be uniformly transferred to the processing space (see 101 in fig. 1), so that a stable substrate processing operation can be performed.

Referring again to fig. 4, the operation of microplasma unit MPC1 will BE described, and if a predetermined voltage is applied to bus electrode TEy in first electrode TE and a predetermined voltage is applied to second electrode BE, charges are formed at the periphery of first plate 12 and second plate 13. Then, if the bus electrode TE is alternately oriented _x And a bus electrode TE _y When a voltage of a predetermined voltage is applied, discharge occurs in the plasma formation space 16, and the process gas is excited to form plasma.

The ion components in the formed plasma are filtered at the discharge port 51 so as not to pass through the discharge port 51, and the radical components (for example, F radicals) can be supplied to the processing space through the discharge port 51 (101 of fig. 1). On the other hand, the reaction gas is supplied to the processing space 101 through the microplasma unit MPC 1. In the processing space 101, the radical component chemically reacts with the reactant gas to form an etchant (e.g., NH ₄ F ^* .HF ^* 、NH ₄ F ^* ) The substrate is processed by an etchant.

In summary, in the substrate processing apparatus 1 according to the first embodiment of the present invention, a plurality of microplasma units MPC arranged in an array manner are utilized. Thus, by controlling the voltage and/or process gas that is provided separately to each microplasma unit MPC, the size, density, etc. of the plasma generated in each microplasma unit MPC can be controlled. Thereby, the amount, density, and the like of radicals in the plasma transferred to the processing space 101 can also be controlled. In addition, since the reactive gas is supplied through the microplasma unit MPC, the amount of the etchant generated by the chemical reaction between the radicals and the reactive gas can be uniformly controlled. In addition, since the substrate processing apparatus 1 has the bypass line 41 penetrating the microplasma unit MPC, the entire volume of the substrate processing apparatus 1 can be reduced.

Fig. 5 is a plan view for explaining a substrate processing apparatus according to a second embodiment of the present invention. For convenience of explanation, the explanation will be mainly made with respect to points different from those explained with reference to fig. 1 to 4.

Referring to fig. 5, in the substrate processing apparatus 2 according to the second embodiment of the present invention, the introduction ports 31, 32 are arranged on one side of the first electrode TE1 centering on the first electrode TE 1. The introduction ports 33 and 34 are arranged on one side of the first electrode TE2 around the first electrode TE 2. Similarly, the bypass lines 41, 42 are arranged on one side of the first electrode TE1 centering on the first electrode TE 1. The bypass lines 43 and 44 are arranged on one side of the first electrode TE2 centering on the first electrode TE 2.

The introduction ports 31 and 33 are arranged on one side of the second electrode BE1 centering on the second electrode BE 1. The introduction ports 32 and 34 are arranged on one side of the second electrode BE2 centering on the second electrode BE 2. Similarly, the bypass lines 41, 43 are also arranged on one side of the second electrode BE1 with the second electrode BE1 being centered. The bypass lines 42 and 44 are arranged on one side of the second electrode BE2 centering on the second electrode BE 2.

That is, in each microplasma unit (for example, MPC 1), the first electrode TE1 and the second electrode BE1 may BE disposed so as to BE biased toward one end of the plasma formation space, and the introduction port 31 and the bypass line 41 may BE disposed in the remaining space of the plasma formation space. If the size of the microplasma unit MPC1 becomes small, it may be difficult to provide two inlets 31 and two bypass lines 41 within the microplasma unit MPC1 as in fig. 3. In this case, the inlet 31 may be disposed at the center of the microplasma unit MPC1, and the bypass line 41 may be disposed at the periphery of the inlet 31. By this arrangement, the plasma can be uniformly formed in the plasma forming space 16, and the radical component of the plasma can be uniformly transferred to the processing space (see 101 in fig. 1), so that a stable substrate processing operation can be performed.

Fig. 6 is a plan view for explaining a substrate processing apparatus according to a third embodiment of the present invention. For convenience of explanation, the explanation will be mainly made with respect to points different from those explained with reference to fig. 1 to 5.

Referring to fig. 6, in the substrate processing apparatus 3 according to the third embodiment of the present invention, the introduction ports 31 to 34 are arranged in the respective microplasma units MPC1 to MPC4 without arranging the bypass line 45.

The bypass line 45 may be provided in a region for separating the microplasma units MPC1 to MPC4 from each other. For example, a sidewall may be formed between adjacent microplasma cells MPC1 to MPC4, and the bypass line 45 may be disposed through the sidewall. Herein, the sidewall may refer to a wall surrounding the plasma forming space 16 in order to define the plasma forming space (e.g., 16 with reference to fig. 4) within the microplasma unit (e.g., MPC 1).

In particular, as shown, by providing the bypass line 45 in the corner space of adjacent microplasma units MPC 1-MPC 4, the space for providing the bypass line 45 can be minimized.

Fig. 7 is a plan view for explaining a substrate processing apparatus according to a fourth embodiment of the present invention. For convenience of explanation, the explanation will be mainly made with respect to points different from those explained with reference to fig. 1 to 6.

Referring to fig. 7, in the substrate processing apparatus 4 according to the fourth embodiment of the present invention, the first electrodes TE1, TE2, TE3 are arranged side by side with each other in the first direction X, and the second electrodes BE1, BE2, BE3 are arranged side by side with each other in the second direction Y. Alternatively, microplasma cells MPC 1-MPC 4 may be formed in arrays in other directions than the first direction X and the second direction Y. For example, in FIG. 7, microplasma cells MPC 1-MPC 4 are arrayed in directions X 'and Y'. For example, the direction X 'may be inclined 45 ° with respect to the first direction X and the direction Y' may be inclined 45 ° with respect to the second direction Y.

The inlet 31 and the bypass line 41 are arranged on both sides of the first electrode TE1 around the first electrode TE 1. The introduction ports 32 and 33 and the bypass lines 42 and 43 are arranged on both sides of the first electrode TE2 centering on the first electrode TE 2. The inlet 34 and the bypass line 44 are disposed on both sides of the first electrode TE3 around the first electrode TE 3.

The inlet 33 and the bypass line 43 are disposed on both sides of the second electrode BE1 centering on the second electrode BE 1. The introduction ports 31 and 34 and the bypass lines 41 and 44 are arranged on both sides of the second electrode BE2 centering on the second electrode BE 2. The inlet 32 and the bypass line 42 are disposed on both sides of the second electrode BE3 centering on the second electrode BE 3.

Fig. 8 is a plan view for explaining a substrate processing apparatus according to a fifth embodiment of the present invention. For convenience of explanation, the first electrode and the second electrode are not shown in fig. 8, mainly for explanation at points different from those explained with reference to fig. 1 to 7.

Referring to fig. 8, in the substrate processing apparatuses 1 to 4 according to the first to fourth embodiments of the present invention, the reaction gas is supplied through bypass lines 41 to 44 penetrating the microplasma units MPC1 to MPC4.

On the other hand, in the substrate processing apparatus 5 according to the fifth embodiment of the present invention, the microplasma units MPC5, MPC6 are not provided with bypass lines. The first plate (i.e., upper plate) 12a of the microplasma units MPC5, MPC6 is provided with inlets 35, 36 for supplying the process gas, and the second plate (i.e., lower plate) 13a is provided with outlets 55, 56 for blocking a part of the components (e.g., ion components) of the plasma formed and allowing the radicals to pass through.

The second plate 13a may be provided with a reaction gas line and supply holes 45, 46. The reaction gas may move along the reaction gas line and be supplied to the process space 101 through the supply holes 45, 46.

Hereinafter, a substrate processing method according to several embodiments of the present invention will be described with reference to fig. 9 to 14.

Referring to fig. 3, 4 and 9, at time t0, the supply of process gas to the plasma forming space 16 of the microplasma units MPC1 to MPC4 through the introduction ports 31 to 34 is started. The reaction gas starts to be supplied to the processing space 101 through the bypass lines 41 to 44. Accordingly, the pressures of the plasma forming space 16 and the processing space 101 start to rise. The process gas may be a fluorine-containing gas (e.g., nitrogen trifluoride) and the reactant gas a nitrogen-and hydrogen-containing gas (e.g., ammonia).

At time t1, the pressures of the plasma forming space 16 and the processing space 101 reach a predetermined value. A predetermined voltage is applied to the first electrodes TE1, TE2 and the second electrodes BE1, BE 2. For example, an appropriate high-frequency voltage may be applied to the first electrodes TE1, TE 2. Bus electrodes TE capable of alternately supplying to the first electrodes TE1, TE2 _x And a bus electrode TE _y A voltage of a predetermined voltage is applied. A ground voltage may BE applied to the second electrodes BE1, BE 2. From time t1 to time t2, plasma is formed, and a process for the substrate is performed in the process space 101.

At time t2, the voltage application to the first electrodes TE1, TE2 and the second electrodes BE1, BE2 is stopped. Then, the evacuation of the plasma forming space 16 and the processing space 101 is started.

In fig. 9, the pressure of the plasma forming space 16 and the pressure of the processing space 101 are illustrated as reaching a predetermined value at the same time point (i.e., time t 1), but not limited thereto. That is, the pressure of the plasma forming space 16 and the pressure of the processing space 101 may reach a predetermined value at different points of time from each other. In this case, after both the pressure of the plasma forming space 16 and the pressure of the processing space 101 reach predetermined values, a predetermined voltage is applied to the first electrodes TE1, TE2 and the second electrodes BE1, BE 2.

Fig. 10 illustrates a substrate processing method according to a second embodiment of the present invention. For convenience of explanation, the explanation will be mainly made with respect to points different from those explained with reference to fig. 9.

In fig. 9, the voltage application to all microplasma units MPC1 to MPC4 is started at the same point in time (i.e., time t 1) and stopped at the same point in time (i.e., time t 2).

On the other hand, in fig. 10, the intervals in which voltages are applied to the microplasma units MPC1 to MPC4 may be adjusted to be different. For example, a voltage is applied to microplasma unit MPC1 to form a plasma during a first time period (i.e., time t 1-time t 21). Alternatively, the plasma may be formed by applying a voltage to microplasma unit MPC4 during a second time (i.e., time t 1-time t 22) different from the first time.

Fig. 10 illustrates that the start time points (time t 1) of the voltages applied to the microplasma units MPC1 and MPC4 are the same, but the present invention is not limited thereto.

According to the substrate processing method of the second embodiment of the present invention, the time for generating plasma by each microplasma unit MPC1 to MPC4 can be adjusted. For example, if a portion of the substrate W is not plasma cleaned well as compared to other portions, the microplasma unit MPC4 corresponding to the portion generates plasma for a relatively long period of time, and the microplasma unit MPC1 corresponding to the other portion generates plasma for a relatively short period of time. In this way, the substrate processing result can be made uniform for the entire substrate W.

Fig. 11 illustrates a substrate processing method according to a third embodiment of the present invention. For convenience of explanation, the explanation will be mainly made with respect to points different from those explained with reference to fig. 9 and 10.

In fig. 11, the voltages (i.e., energies) applied to the microplasma units MPC1 to MPC4 may be adjusted to be different. For example, a voltage of a first magnitude h1 (or energy of the first magnitude h 1) is applied to the microplasma unit MPC1, and a voltage of a second magnitude h2 (or energy of the second magnitude h 2) different from the first magnitude h1 is applied to the microplasma unit MPC4. In this way, the amount of plasma generated in microplasma unit MPC1 and microplasma unit MPC4 can be made different. Thus, the radical amount of the plasma generated in the microplasma unit MPC1 and the radical amount of the plasma generated in the microplasma unit MPC4 can be adjusted to be different.

For example, if a part of the substrate W is not subjected to plasma cleaning well as compared with other parts, a relatively large voltage is applied to the microplasma unit MPC4 corresponding to the above part to generate plasma, and a relatively small voltage is applied to the microplasma unit MPC1 corresponding to the other parts to generate plasma. In this way, the substrate processing result can be made uniform for the entire substrate W.

Although not shown separately, the modes described with reference to fig. 10 and 11 may be combined. That is, the amount and the supply time of the energy to be supplied for generating the plasma in the microplasma unit MPC4 and the amount and the supply time of the energy to be supplied for generating the plasma in the microplasma unit MPC1 can be adjusted to be different.

Fig. 12 illustrates a substrate processing method according to a fourth embodiment of the present invention. Fig. 13 illustrates a substrate processing method according to a fifth embodiment of the present invention.

Referring to fig. 12 and 13, in order to make the substrate processing result uniform for the entire substrate W, the microplasma units MPC1 to MPC4 that generate plasma may be different depending on the sections P1 and P2.

Labeled "ON" in the figures means that an appropriate voltage is applied to the corresponding microplasma unit (e.g., MPC 1) to generate plasma. The reference "OFF" in the figures means that the corresponding microplasma unit (e.g., MPC 1) does not generate plasma.

As shown in fig. 12, in the first section P1, the first and fourth microplasma units MPC1, MPC4 generate plasma, and the second and third microplasma units MPC2, MPC3 do not generate plasma.

In the second interval P2, the first and fourth microplasma units MPC1, MPC4 do not generate plasma, and the second and third microplasma units MPC2, MPC3 generate plasma.

The first and second sections P1 and P2 may be alternately repeated.

As shown in fig. 13, in the first section P1, the first and third microplasma units MPC1, MPC3 generate plasma, and the second and fourth microplasma units MPC2, MPC4 do not generate plasma.

In the second interval P2, the first and second microplasma units MPC1, MPC2 generate plasma, and the third and fourth microplasma units MPC3, MPC4 do not generate plasma.

The first and second sections P1 and P2 may be alternately repeated.

Here, the first microplasma unit MPC1 generates plasma independently of the sections P1, P2. On the other hand, the second and third microplasma units MPC2, MPC3 selectively generate plasmas according to the intervals P1, P2.

For example, if a part of the substrate W is not plasma-cleaned better than other parts, the microplasma units MPC1 corresponding to the part are caused to generate plasma independently of the sections P1 and P2, and the microplasma units MPC2 and MPC3 corresponding to the other parts are caused to selectively generate plasma according to the sections P1 and P2. In this way, the substrate processing result can be made uniform for the entire substrate W.

The methods described with fig. 9 to 13 may be combined with each other. For example, the method of fig. 11 and the method of fig. 12 may also be combined. That is, in the first section P1, the first and fourth microplasma units MPC1, MPC4 generate plasma, but the voltage (energy) supplied to the first microplasma unit MPC1 is made different from the voltage (energy) supplied to the fourth microplasma unit MPC4. The second and third microplasma units MPC2, MPC3 do not generate plasma.

In the second interval P2, the first and fourth microplasma units MPC1, MPC4 do not generate plasma, and the second and third microplasma units MPC2, MPC3 generate plasma. Here, the voltage (energy) supplied to the second microplasma unit MPC2 is made different from the voltage (energy) supplied to the third microplasma unit MPC 3.

Referring to fig. 14, a first substrate is processed based on first setting data (S510).

Specifically, the "setting data" may be data for operating the plurality of microplasma units MPC1 to MPC4, and may refer to the voltage level, voltage application time, gas flow rate, ratio, and the like of each microplasma unit MPC1 to MPC4.

For example, the first setting data may be data in which the same voltage is supplied to all of the microplasma units MPC1 to MPC4 during the same time to generate plasma.

Next, a process result (e.g., a cleaning result) of the first substrate is analyzed (S520).

As a result of the analysis, it may be determined that a part of the substrate W is not subjected to the substrate treatment (for example, plasma cleaning) well as compared with other parts.

Next, the first setting data is changed to the second setting data to process the second substrate (S530).

Specifically, the driving method of the plurality of microplasma cells MPC1 to MPC4 may be changed so that the substrate processing results may be uniform for the entire substrate W by reflecting the analysis results. As described above, the second setting data may be generated by adjusting the application time of the voltage (see fig. 10), adjusting the magnitude of the voltage (see fig. 11), or dividing the interval in which the plasma is generated and operating it (see fig. 12 and 13). And processing the second substrate by using the newly changed second setting data.

Steps S520 and S530 may be repeated. That is, if the substrate processing result is still unsatisfactory as a result of re-analysis after processing the second substrate with the second setting data, the second setting data may be changed to the third setting data.

Although embodiments of the present invention have been described with reference to the above and drawings, it will be understood by those of ordinary skill in the art that the present invention may be embodied in other specific forms without changing its technical spirit or essential features. Accordingly, it should be understood that the embodiments described above are illustrative in all respects and not restrictive.

Claims

1. A substrate processing apparatus comprising:

disposing a processing space of the substrate; and

a plasma generating module that generates plasma for processing the substrate,

the plasma generation module includes:

a plurality of first electrodes arranged side by side with each other in a first direction;

a plurality of second electrodes arranged side by side with each other in a second direction different from the first direction; and

an array comprising a plurality of microplasma cells, each microplasma cell being connected to a corresponding first electrode and a corresponding second electrode, each microplasma cell generating a plasma according to a first voltage applied to the corresponding first electrode and a second voltage applied to the corresponding second electrode.

2. The substrate processing apparatus according to claim 1, wherein,

the microplasma unit includes:

a plasma forming space;

a first plate disposed at one side of the plasma forming space, provided with the corresponding first electrode, and formed with an introduction port for introducing a process gas into the plasma forming space; and

and a second plate disposed on the other side of the plasma forming space, provided with the corresponding second electrode, and formed with a discharge port for filtering a part of components in the plasma formed in the plasma forming space.

3. The substrate processing apparatus according to claim 2, wherein,

the exhaust port blocks ion components in the plasma and passes free radicals in the plasma.

4. The substrate processing apparatus according to claim 2, wherein,

the microplasma unit further includes a bypass line connecting the first plate and the second plate through the plasma formation space, the bypass line for delivering a reactant gas to the process space.

5. The substrate processing apparatus according to claim 2, wherein,

the microplasma unit includes at least one sidewall defining the plasma-forming space, the microplasma unit further including a bypass line for passing through the sidewall to deliver a reactant gas to the processing space.

6. The substrate processing apparatus according to claim 2, wherein,

a reaction gas line and a supply hole for supplying an unexcited reaction gas to the process space are also formed at the second plate.

7. The substrate processing apparatus according to claim 1, wherein,

the first electrode includes two bus electrodes arranged side by side with each other.

8. The substrate processing apparatus according to claim 1, wherein,

the substrate processing apparatus adjusts the magnitude of the first voltage or the magnitude of the second voltage to adjust the amount of plasma generated.

9. The substrate processing apparatus according to claim 1, wherein,

the array includes first and second microplasma units that are different from each other,

the first microplasma unit generates a plasma during a first time,

the second microplasma unit generates plasma during a second time different from the first time.

10. The substrate processing apparatus according to claim 1, wherein,

the array includes first microplasma units, second microplasma units, and third microplasma units that are different from each other,

during a first interval, the first and second microplasma units generate plasma and the third microplasma unit does not generate plasma, during a second interval, which is consecutive to the first interval, the first and third microplasma units generate plasma and the second microplasma unit does not generate plasma.

11. The substrate processing apparatus according to claim 10, wherein,

the first section and the second section are alternately repeated.

12. The substrate processing apparatus according to claim 1, wherein,

the array includes a plurality of first microplasma cells and a plurality of second microplasma cells alternately arranged,

during a first interval, the plurality of first microplasma units generate plasma, and the plurality of second microplasma units do not generate plasma,

during a second interval that is consecutive to the first interval, the plurality of second microplasma units generate plasma, and the plurality of first microplasma units do not generate plasma.

13. A substrate processing apparatus comprising:

a plasma forming space;

a first plate disposed above the plasma forming space and having an inlet for introducing a process gas into the plasma forming space;

a second plate disposed below the plasma forming space and having a discharge port for filtering a part of components in the plasma formed in the plasma forming space;

a first electrode provided on the first plate and extending long in a first direction;

a second electrode provided on the second plate and extending long in a second direction different from the first direction; and

and a bypass line penetrating the plasma forming space to connect the first plate and the second plate and to transfer an unexcited reaction gas.

14. The substrate processing apparatus according to claim 13, wherein,

the first plate and the second plate include dielectrics, the first electrode is disposed in the first plate, and the second electrode is disposed in the second plate.

15. The substrate processing apparatus according to claim 14, wherein,

the first plate is formed with a plurality of inlet ports arranged on both sides of the first electrode, the bypass line is plural, and the bypass line is arranged on both sides of the first electrode.

16. The substrate processing apparatus according to claim 13, wherein,

the process gas includes an inert gas and a gas composed of a compound containing at least one of carbon, nitrogen, and fluorine, and the reaction gas includes a gas composed of a compound containing at least one of hydrogen and nitrogen.

17. A substrate processing method, comprising:

provided is a substrate processing apparatus including: a processing space for processing a substrate; and a plasma generation module that generates plasma for processing the substrate, the plasma generation module comprising: a plurality of first electrodes arranged side by side with each other in a first direction; a plurality of second electrodes arranged side by side with each other in a second direction different from the first direction; and an array comprising a plurality of microplasma cells connected to the plurality of first electrodes and the plurality of second electrodes;

providing a process gas to the plurality of microplasma cells and a reactant gas to the process space; and

the method includes providing a first amount of energy to a first microplasma unit of the plurality of microplasma units and providing a second amount of energy to a second microplasma unit of a second size different from the first size to cause the amount of radicals of the plasma generated at the first microplasma unit to be different from the amount of radicals of the plasma generated at the second microplasma unit.

18. The substrate processing method according to claim 17, wherein,

the microplasma unit further includes a bypass line connecting the first plate and the second plate and for transferring the reaction gas to the process space in a state in which the reaction gas is not excited.

19. The substrate processing method according to claim 17, wherein,

the first time to supply the first energy to the first microplasma unit and the second time to supply the second energy to the second microplasma unit are different from each other.

20. The substrate processing method according to claim 17, wherein,

the plurality of microplasma units includes a third microplasma unit that does not generate plasma during the time that the first microplasma unit and the second microplasma unit generate plasma.