CN117007404A - DAF glue removing method for semiconductor stacked package structure - Google Patents
DAF glue removing method for semiconductor stacked package structure Download PDFInfo
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- CN117007404A CN117007404A CN202210479233.9A CN202210479233A CN117007404A CN 117007404 A CN117007404 A CN 117007404A CN 202210479233 A CN202210479233 A CN 202210479233A CN 117007404 A CN117007404 A CN 117007404A
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- sulfuric acid
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- 239000003292 glue Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000002253 acid Substances 0.000 claims abstract description 30
- 239000000126 substance Substances 0.000 claims abstract description 19
- 238000011282 treatment Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 230000007797 corrosion Effects 0.000 claims abstract description 13
- 238000005260 corrosion Methods 0.000 claims abstract description 13
- 239000004033 plastic Substances 0.000 claims abstract description 12
- 238000004806 packaging method and process Methods 0.000 claims abstract description 7
- 239000005022 packaging material Substances 0.000 claims abstract description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 23
- 239000010410 layer Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 11
- 238000009835 boiling Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 238000003486 chemical etching Methods 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000002035 prolonged effect Effects 0.000 claims description 2
- 239000003566 sealing material Substances 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 5
- 230000002159 abnormal effect Effects 0.000 abstract description 3
- 150000007513 acids Chemical class 0.000 abstract description 3
- 230000002349 favourable effect Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 65
- 239000000463 material Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The application discloses a DAF glue removing method of a semiconductor stacked packaging structure, which comprises the steps of firstly removing plastic packaging materials by using first mixed acid to obtain a multi-layer wafer, then putting the multi-layer wafer into preheated concentrated sulfuric acid for treatment, and then continuously removing the DAF glue by using second mixed acid by chemical corrosion to separate the multi-layer wafer layer by layer; according to the application, through designing the proportion of different acids and multiple heating treatments, DAF glue can be removed well, the problem of wafer damage caused by abnormal expansion of the DAF glue in the unsealing process is avoided, the unsealing efficiency is improved, the subsequent wafer failure analysis is facilitated, and the success rate of chemical unsealing can be greatly improved by chemically unsealing again after the DAF is modified by using heated concentrated sulfuric acid; the operation is simple and convenient, and the cost is low; the method is used for chemical unsealing, so that the risk of mechanical stress possibly brought by other mechanical or laser unsealing can be avoided, the damage to the wafer in the unsealing process is reduced, and favorable conditions are provided for subsequent failure positioning and electrical property testing.
Description
Technical Field
The application relates to the field of semiconductors, in particular to a DAF glue removing method of a semiconductor stacked package structure.
Background
At present, the stacked package structure is widely applied to the process production of various memory chips due to the high density and high integration level. DAF (Die attach film) glue is used as a key bonding material in the wafer stacking process, and has high requirements on heat resistance, strength and the like. However, such high strength DAF glue also presents a significant challenge in subsequent die opening and wafer failure analysis, and how to remove the DAF glue between stacked wafers and obtain a complete and intact wafer is an urgent issue to be addressed.
Chemical unsealing is an economical and applicable method in unsealing semiconductor chips, and is often used for solving the problems of various plastic packages and removal of underfill in the unsealing process. However, many experiments show that the simple inorganic acid corrosion is easy to cause the expansion of the edge DAF glue and the local damage of the wafer.
Disclosure of Invention
The application aims to solve the technical problem that the wafer breakage and the defect of residual glue caused by improper DAF removal when the wafer with the stacked package structure in the prior art is unsealed, and provides a DAF glue removing method for the semiconductor stacked package structure.
The technical scheme adopted for solving the technical problems is as follows: a DAF glue removal method of constructing a semiconductor package on package structure comprising a substrate, a plurality of layers of wafers stacked on the substrate and bonded together by DAF glue, and a plastic encapsulant disposed on the substrate and encapsulating the plurality of layers of wafers, the method comprising:
step 1: placing the semiconductor stacked packaging structure to be unsealed into first mixed acid formed by mixing fuming nitric acid and concentrated sulfuric acid according to a first proportion and preheating to a first preset temperature, and removing the plastic packaging material through chemical corrosion to obtain the multilayer wafer;
step 2: putting the multilayer wafer obtained in the step 1 into concentrated sulfuric acid preheated to a second preset temperature to be treated so as to modify the DAF adhesive, wherein the second preset temperature is higher than the first preset temperature;
step 3: placing the multilayer wafer processed in the step 2 into a second mixed acid formed by mixing fuming nitric acid and concentrated sulfuric acid according to a second proportion and heating to a third preset temperature, and removing DAF glue by chemical corrosion to separate the multilayer wafer layer by layer;
step 4: cleaning the single-layer wafer surface residue obtained in the step 3, immersing the wafer in a cleaning solution, heating to a fourth preset temperature, and taking out after a period of treatment;
step 5: and (4) checking whether the surface of the wafer taken out in the step (4) is clean, and returning to the step (4) if DAF glue remains on the surface of the wafer.
Further, in the DAF glue removing method of the semiconductor stack package structure of the present application, the first mixed acid in the step 1 is formed by mixing fuming nitric acid with a concentration of 90% -97.5% and concentrated sulfuric acid with a concentration of 95% -98%, and the first ratio is a volume ratio of fuming nitric acid to concentrated sulfuric acid of 1:1.
Further, in the DAF glue removing method of the semiconductor stacked package structure of the present application, the first predetermined temperature and the etching time in the step 1 may be adjusted, and the adjustment trend of the etching time is inversely related to the adjustment trend of the first predetermined temperature.
Further, in the DAF glue removing method of the semiconductor stacked package structure of the present application, the first predetermined temperature in the step 1 is 150 ℃ to 200 ℃, and the chemical etching time is 5 minutes to 10 minutes.
Further, in the DAF glue removing method of the semiconductor stacked package structure of the present application, the concentration of the concentrated sulfuric acid in step 2 is identical to the concentration of the concentrated sulfuric acid used in the configuration of the first mixed acid in step 1.
Further, in the method for removing the DAF glue of the semiconductor stacked package structure, the second preset temperature in the step 2 is 250-300 ℃ and the treatment time is 10-15 minutes.
Further, in the DAF glue removing method of the semiconductor stack package structure of the present application, if the concentrated sulfuric acid boils during the processing in step 2, the temperature of the concentrated sulfuric acid can be reduced, and if no boiling phenomenon occurs, the temperature of the concentrated sulfuric acid can be raised, and the temperature of the concentrated sulfuric acid is not lower than 250 ℃, and the processing time is not longer than 20 minutes.
Further, in the DAF glue removing method of the semiconductor stack package structure of the present application, the second mixed acid in the step 3 is formed by mixing fuming nitric acid with a concentration of 90% -97.5% and concentrated sulfuric acid with a concentration of 95% -98%, and the second ratio is a volume ratio of fuming nitric acid to concentrated sulfuric acid of 3:1.
Further, in the method for removing the DAF glue of the semiconductor stacked package structure of the present application, the third predetermined temperature in the step 3 is 150 ℃ to 200 ℃, and if boiling occurs during the treatment, the temperature can be reduced and the chemical etching time can be prolonged.
Further, in the DAF glue removing method of the semiconductor stacked package structure of the present application, the fourth predetermined temperature in step 4 is 100-120 ℃, and the wafer surface residue is rinsed with deionized water, and the cleaning solution is specifically Dupont EKC-270 solution.
The DAF glue removing method of the semiconductor stacked packaging structure has the following beneficial effects: firstly, removing plastic packaging materials by using first mixed acid to etch to obtain a multi-layer wafer, then putting the multi-layer wafer into concentrated sulfuric acid preheated to a second preset temperature for treatment, then continuously removing DAF glue by using second mixed acid with another proportion to separate the multi-layer wafer layer by layer, and finally cleaning to remove residual DAF glue; therefore, the DAF glue among the wafers can be removed better by designing the proportion of different acids and carrying out heating treatment for multiple times, the problem of wafer damage caused by abnormal expansion of the DAF glue in the unsealing process is avoided, the unsealing efficiency of stacked chips is improved, and the subsequent wafer failure analysis is facilitated; after the first chemical corrosion, the material performance of the DAF adhesive is fully considered, the DAF is modified by using heated concentrated sulfuric acid, the modified DAF adhesive has a good modification effect, and after the modification, the success rate of chemical unsealing of the packaged chip can be greatly improved through chemical unsealing; the method is simple and convenient to operate and low in cost; the method is used for chemical unsealing, so that the risk of mechanical stress possibly brought by other mechanical or laser unsealing can be avoided, the damage to the wafer in the unsealing process is reduced, and favorable conditions are provided for subsequent failure positioning and electrical property testing.
Drawings
For a clearer description of an embodiment of the application or of a technical solution in the prior art, the drawings that are needed in the description of the embodiment or of the prior art will be briefly described, it being obvious that the drawings in the description below are only embodiments of the application, and that other drawings can be obtained, without inventive effort, by a person skilled in the art from the drawings provided:
FIG. 1 is a flow chart showing the steps of a DAF glue removal method for a semiconductor package on package structure according to the present application;
fig. 2 is a schematic diagram of one structure of a semiconductor package-on-package structure.
Detailed Description
In order to solve the defect of wafer damage and residual glue caused by improper DAF removal in the traditional semiconductor stack packaging structure chemical unsealing method, the application constructs the DAF glue removing method of the semiconductor stack packaging structure.
The DAF glue removal method mentioned in the present application is mainly developed from the viewpoint of chemical unsealing. Therefore, the chemical mixed acid proportion and the temperature can be properly adjusted within the safe and controllable operation range.
In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Exemplary embodiments of the present application are illustrated in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete. It should be understood that the embodiments of the present application and the specific features in the embodiments are detailed descriptions of the technical solutions of the present application, and not limited to the technical solutions of the present application, and the embodiments of the present application and the technical features in the embodiments may be combined with each other without conflict.
Referring to fig. 1, the DAF glue removing method of the semiconductor stack package structure of the present application includes:
s101: placing the semiconductor stacked package structure to be unsealed into first mixed acid formed by mixing fuming nitric acid and concentrated sulfuric acid according to a first proportion and preheating to a first preset temperature, and removing the plastic package material 4 through chemical corrosion to obtain the multilayer wafer 3;
referring to fig. 2, a semiconductor stacked package structure will be first described. The semiconductor stacked package structure comprises a substrate 1, a plurality of layers of wafers 3 stacked on the substrate 1 and bonded together through DAF glue 2, and a plastic package material 4 arranged on the substrate 1 and wrapping the plurality of layers of wafers, wherein the wafers 3 are electrically connected with the substrate 1 through binding wires. The wafers 3 and the substrate 1 are horizontally arranged, the multiple layers of wafers 3 are sequentially stacked on the substrate 1 from bottom to top in the vertical direction, and the sizes of the wafers 3 can be the same or different. Such as is shown in fig. 2, comprising 4 layers of wafers 3 of non-uniform size. The adjacent wafers 3 are bonded together by using DAF glue 2, and the bottommost wafer 3 and the substrate 1 are also bonded together by using the DAF glue 2.
The objective of this embodiment is to remove the DAF glue 2, and the objective of this step is to remove the molding compound 4 first, and expose the DAF glue 2, wherein the molding compound 4 is typically epoxy resin. In the step, the corrosion progress is required to be paid attention to at random when unsealing until all the epoxy resin plastic packages are completely corroded. If the substrate 1 and the bonding wires at the bottom of the stacked wafer 3 are corroded too much, the sample is difficult to clamp, and the better frame structure is reserved, so that the necessary failure analysis such as chip bonding structure and electrical property test is facilitated.
In the step, the first mixed acid is formed by mixing fuming nitric acid with the concentration of 90-97.5% and concentrated sulfuric acid with the concentration of 95-98%, and the first ratio is the volume ratio of fuming nitric acid to concentrated sulfuric acid of 1:1. Wherein the first preset temperature is 150-200 ℃. In this example, the first mixed acid was placed in advance in a beaker on a heating platform according to a ratio of fuming nitric acid to concentrated sulfuric acid of 1:1, and heated to 150 ℃. And taking out after chemical etching for about 5-10 minutes, and obtaining the multi-layer wafer 3 bonded together through DAF adhesive.
If fuming nitric acid is only adopted, the reaction rate is high, the chip frame is easy to excessively corrode, and the subsequent sample clamping is easy to produce scratch risk; if only concentrated sulfuric acid is adopted, the plastic packaging material 4 is easy to adhere to the surface of the wafer 3 after dehydration and carbonization, and the subsequent cleaning difficulty is increased. The process of removing the plastic packaging material 4 can be controlled more by adopting the mixed acid ratio and the temperature recommended by the embodiment. Meanwhile, the mixed acid can play a good role in the binding process (binding line retention).
Preferably, the first predetermined temperature and the corrosion time in the step 1 may be adjusted, and the trend of adjustment of the corrosion time is inversely related to the trend of adjustment of the first predetermined temperature.
S102: the multilayer wafer 3 obtained in the step S101 is placed into concentrated sulfuric acid preheated to a second preset temperature to be treated so as to modify the DAF glue 2, wherein the second preset temperature is higher than the first preset temperature;
in this step, the concentrated sulfuric acid temperature is required to be concerned, so that the acid liquor is prevented from boiling due to the excessive temperature, and the stacked wafers 3 may be prevented from touching the wall of the beaker to be damaged. After the treatment in this step, DAF glue 2 is modified, expanded and blackened.
The concentration of the concentrated sulfuric acid in this step is identical to the concentration of the concentrated sulfuric acid used in the configuration of the first mixed acid in S101.
The second preset temperature in the step is 250-300 ℃ and the treatment time is 10-15 minutes. Preferably, if the boiling of the concentrated sulfuric acid occurs in the treatment process of the step, the temperature of the concentrated sulfuric acid can be properly reduced, if no boiling phenomenon occurs, the temperature of the concentrated sulfuric acid can be properly increased, the temperature of the concentrated sulfuric acid is not lower than 250 ℃, the treatment time is not longer than 20 minutes, and otherwise, wafer breakage abnormality easily occurs.
In the step, the wafer 3 is placed into the concentrated sulfuric acid heated to a certain temperature for treatment, the concentrated sulfuric acid has strong oxidizing property and dehydration property, and when the temperature is raised to 300 ℃, the DAF glue 3 can be modified as quickly as possible while the boiling of the concentrated sulfuric acid is avoided. After the DAF glue 3 is subjected to heat treatment, the DAF glue 3 is heated to exceed the glass phase transition temperature, the thermal expansion coefficient and the elastic modulus of the DAF glue 3 are greatly changed relative to those of the DAF glue at normal temperature, and the DAF glue 3 is further modified due to the strong oxidizing property and the dehydration property of concentrated sulfuric acid, so that the molecular structure is further loosened.
S103: putting the multilayer wafer 3 processed in the step S102 into a second mixed acid formed by mixing fuming nitric acid and concentrated sulfuric acid according to a second proportion and heating to a third preset temperature, and removing the DAF glue 2 through chemical corrosion to separate the multilayer wafer 3 layer by layer;
in the step, the second mixed acid is formed by mixing fuming nitric acid with the concentration of 90-97.5% and concentrated sulfuric acid with the concentration of 95-98%, and the second proportion is the volume ratio of fuming nitric acid to concentrated sulfuric acid of 3:1.
In this step, the third predetermined temperature is 150 ℃ to 200 ℃. In this embodiment, specifically, the second mixed acid should be placed in advance in a beaker on a heating platform according to the ratio of fuming nitric acid to concentrated sulfuric acid of 3:1, and heated to 200 ℃ for about 1 hour, so as to obtain a multi-layer wafer completely separated after removing DAF.
Preferably, in this step, if boiling occurs during the treatment, the temperature may be reduced.
In this step, the processed stacked wafers 3 are placed into another mixed acid with another ratio again to be heated continuously until the DAF glue 2 is removed, and this step suggests that fuming nitric acid and concentrated sulfuric acid are used to prepare the stacked wafers according to the volume ratio of 3:1, and the temperature is controlled at 200 ℃, and this ratio can not only well remove the modified DAF glue 3, but also avoid the problem of wafer breakage caused by too fast corrosion rate. When the proportion of fuming nitric acid is reduced or the temperature is reduced, the step can still be carried out, but the etching time required for the step needs to be adjusted.
S104: cleaning the surface residue of the single-layer wafer 3 obtained in the step S103, immersing the wafer 3 in a cleaning solution, heating to a fourth preset temperature, and taking out after a period of treatment;
in this step, the fourth predetermined temperature is 100 to 120 ℃. In this embodiment, the wafer 3 is immersed in the solution and heated to 120 ℃, and after about 5 minutes, the wafer is taken out to inspect the surface of the wafer for about 5 minutes, and then the wafer 3 is taken out to inspect whether the surface of the wafer is clean.
In this step, deionized water is used to rinse the surface residue of wafer 3. The cleaning solution of the application adopts Dupont EKC-270 as the recommended solvent, and can better remove residual gum and dirt under the heating state. In other embodiments, common acetone and IPA, etc. may be used instead.
S105: checking whether the surface of the wafer 3 taken out in S104 is clean, and if DAF glue 2 remains on the surface of the wafer 3, returning to S104.
The method is suitable for removing DAF glue of the semiconductor stacked packaging structure, and is beneficial to unsealing test and subsequent failure analysis requirements of the chip. The method has the following effects:
1) The method solves the problem of chemical removal of DAF glue between wafers of chips of a stacked package structure, can well remove the DAF glue between the wafers by designing the proportion of different acids and carrying out multiple heating treatments, avoids the problem of wafer damage caused by abnormal expansion of the DAF glue in the process of unsealing, improves the unsealing efficiency of stacked chips, and is beneficial to subsequent wafer failure analysis; and the DAF glue is modified by heating with concentrated sulfuric acid, so that the DAF is easier to remove, and a complete single-layer wafer is obtained.
2) The method is used for chemical unsealing, can avoid mechanical stress risks possibly brought by other mechanical or laser unsealing, reduces wafer damage in the unsealing process, and provides favorable conditions for subsequent failure positioning and electrical property testing.
3) The method is simple and convenient to operate and low in cost.
It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The terms including ordinal numbers such as "first", "second", and the like used in the present specification may be used to describe various constituent elements, but these constituent elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first component may be termed a second component, and, similarly, a second component may be termed a first component, without departing from the scope of the present application.
The embodiments of the present application have been described above with reference to the accompanying drawings, but the present application is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present application and the scope of the claims, which are to be protected by the present application.
Claims (10)
1. A DAF glue removal method of a semiconductor stack package structure including a substrate (1), a multi-layer wafer (3) stacked on the substrate (1) and bonded together by a DAF glue (2), and a plastic sealing material (4) disposed on the substrate (1) and wrapping the multi-layer wafer (3), characterized in that the method includes:
step 1: placing the semiconductor stacked packaging structure to be unsealed into first mixed acid formed by mixing fuming nitric acid and concentrated sulfuric acid according to a first proportion and preheating to a first preset temperature, and removing the plastic packaging material (4) through chemical corrosion to obtain the multilayer wafer (3);
step 2: placing the multilayer wafer (3) obtained in the step 1 into concentrated sulfuric acid preheated to a second preset temperature to be treated so as to modify the DAF adhesive (2), wherein the second preset temperature is higher than the first preset temperature;
step 3: placing the multilayer wafer (3) processed in the step 2 into a second mixed acid formed by mixing fuming nitric acid and concentrated sulfuric acid according to a second proportion and heating to a third preset temperature, and removing the DAF glue (2) through chemical corrosion to separate the multilayer wafer (3) layer by layer;
step 4: cleaning the surface residue of the single-layer wafer (3) obtained in the step (3), immersing the wafer (3) in a cleaning solution, heating to a fourth preset temperature, and taking out after a period of treatment;
step 5: checking whether the surface of the wafer (3) taken out in the step 4 is clean, and returning to the step 4 if DAF glue (2) remains on the surface of the wafer (3).
2. The method of removing DAF glue in a semiconductor package on package structure according to claim 1, wherein the first mixed acid in step 1 is formed by mixing fuming nitric acid with a concentration of 90% -97.5% and concentrated sulfuric acid with a concentration of 95% -98%, and the first ratio is a 1:1 volume ratio of fuming nitric acid to concentrated sulfuric acid.
3. The method of claim 1, wherein the first predetermined temperature and the etching time in step 1 are adjustable, and wherein the trend of etching time is inversely related to the trend of etching time.
4. The method of removing DAF glue of a semiconductor package according to claim 1, wherein said first predetermined temperature in step 1 is 150 ℃ to 200 ℃ and the chemical etching time is 5 minutes to 10 minutes.
5. The DAF glue removal method of a semiconductor package-on-package structure of claim 1, wherein the concentration of concentrated sulfuric acid in step 2 is consistent with the concentration of concentrated sulfuric acid used in configuring the first mixed acid in step 1.
6. The method of removing DAF glue from a semiconductor package according to claim 1, wherein said second predetermined temperature in step 2 is 250 ℃ to 300 ℃ and the processing time is 10 minutes to 15 minutes.
7. The method for removing DAF glue in a semiconductor package-on-package structure according to claim 1, wherein in step 2, if boiling of concentrated sulfuric acid occurs during the treatment, the temperature of the concentrated sulfuric acid is lowered, and if no boiling phenomenon occurs, the temperature of the concentrated sulfuric acid is raised; and the temperature of the concentrated sulfuric acid is not lower than 250 ℃, and the treatment time is not longer than 20 minutes.
8. The method for removing DAF glue in a semiconductor stacked package structure according to claim 1, wherein the second mixed acid in the step 3 is formed by mixing fuming nitric acid with a concentration of 90% -97.5% and concentrated sulfuric acid with a concentration of 95% -98%, and the second ratio is a volume ratio of fuming nitric acid to concentrated sulfuric acid of 3:1.
9. The method of removing DAF glue in a stacked semiconductor package according to claim 1, wherein the third predetermined temperature in step 3 is 150-200deg.C, and if boiling occurs during the treatment, the temperature of the second mixed acid can be reduced and the chemical etching time can be prolonged.
10. The method according to claim 1, wherein the fourth predetermined temperature in step 4 is 100-120 ℃, and the rinsing of the wafer (3) surface residue with deionized water is performed, and the cleaning solution is Dupont EKC-270.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210479233.9A CN117007404A (en) | 2022-04-29 | 2022-04-29 | DAF glue removing method for semiconductor stacked package structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210479233.9A CN117007404A (en) | 2022-04-29 | 2022-04-29 | DAF glue removing method for semiconductor stacked package structure |
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| CN117007404A true CN117007404A (en) | 2023-11-07 |
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| CN202210479233.9A Pending CN117007404A (en) | 2022-04-29 | 2022-04-29 | DAF glue removing method for semiconductor stacked package structure |
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