CN116995119B - Multicolor quantum well infrared detector structure on GaAs substrate - Google Patents

Multicolor quantum well infrared detector structure on GaAs substrate Download PDF

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CN116995119B
CN116995119B CN202311248845.8A CN202311248845A CN116995119B CN 116995119 B CN116995119 B CN 116995119B CN 202311248845 A CN202311248845 A CN 202311248845A CN 116995119 B CN116995119 B CN 116995119B
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active region
quantum well
gaas
wave active
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CN116995119A (en
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苏大鸿
杜全钢
冯巍
谢小刚
李维刚
郭帅
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Xinlei Semiconductor Technology Suzhou Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

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Abstract

The application provides a multicolor quantum well infrared detector structure on a GaAs substrate, and relates to the technical field of semiconductor materials. The structure comprises: a grating layer on the GaAs substrate, a first contact layer on the grating layer, a long-wave active region structure on the first contact layer, a second contact layer on the long-wave active region structure, a medium-wave active region structure on the second contact layer, and a third contact layer on the medium-wave active region structure; the structure can effectively reduce dark current of the device and improve the detection rate; in of the second contact layer z Ga 1‑z The P layer can isolate medium-wave and long-wave signal crosstalk, can also play a role in corrosion blocking, and reduces the difficulty of a subsequent device manufacturing process.

Description

Multicolor quantum well infrared detector structure on GaAs substrate
Technical Field
The application relates to the technical field of semiconductor materials, in particular to a multicolor quantum well infrared detector structure on a GaAs substrate.
Background
In recent years, as the development of social informatization is accelerated, optical sensing and communication technologies are in a new situation, and these developments are all dependent on the progress of optoelectronic technologies. Compared with other infrared technologies, the QWIP has the advantages of high response speed, good uniformity, easy preparation of double-color and multi-color large area array arrays and the like, and can grow multi-quantum well materials with high quality and large area uniformity by using advanced technologies such as MBE, MOCVD and the like, and the large area detector array is easy to prepare, so that the QWIP becomes a hotspot for international infrared focal plane research and is one of the main stream technologies of the third-generation infrared focal planes. The existing long-wave and medium-wave QWIP structures are AlGaAs/GaAs/AlGaAs and AlGaAs/GaAs/InGaAs/GaAs/AlGaAs quantum well structures, respectively, and the structures are difficult to limit dark current and improve detection rate. In multi-color qwi devices, crosstalk of signals may exist between quantum wells of different wavelengths, and how to shield signals is also a difficulty. In the device manufacturing process, as the three materials of GaAs, alGaAs and InGaAs have no effective selective etching method in the wet etching, the process difficulty of QWIP is increased.
Therefore, a quantum well infrared detector capable of effectively inhibiting dark current, improving detection rate, improving sensitivity and response rate and effectively reducing device manufacturing difficulty is urgently needed.
Disclosure of Invention
At present, a quantum well infrared detector capable of effectively inhibiting dark current, improving detection rate and effectively reducing manufacturing difficulty of devices is urgently needed.
The application provides a multicolor quantum well infrared detector structure on a GaAs substrate, which comprises:
the grating layer on the GaAs substrate comprises the following components from bottom to top: gaAs layer and Al m Ga 1-m As layer, m represents the percentage of Al composition;
the first contact layer is arranged on the grating layer and is an N-GaAs layer;
the long-wave active region structure on the first contact layer comprises a plurality of quantum wells, and the long-wave active region quantum well structure sequentially comprises: first Al x Ga 1-x An As layer, a first AlAs layer, a second Al x Ga 1-x An As layer, an n-GaAs layer, a third Al x Ga 1-x An As layer, a second AlAs layer and a fourth Al x Ga 1-x As layer, x value represents Al component percentage;
the second contact layer structure comprises a first N-GaAs layer and In from bottom to top z Ga 1-z A P layer and a second N-GaAs layer, in the second contact layer z Ga 1-z The P layer is used as a corrosion barrier layer and a signal isolation layer, and z value represents the percentage of In componentA ratio of;
the medium wave active region structure on the second contact layer comprises a plurality of quantum wells, and the medium wave quantum well structure sequentially comprises, from bottom to top: first Al y Ga 1-y An As layer, a first AlAs layer, a second Al y Ga 1-y An As layer, a first GaAs layer, n-In a Ga 1-a As layer, second GaAs layer, third Al y Ga 1-y An As layer, a second AlAs layer and a fourth Al y Ga 1-y As layer, y represents Al component percentage, a represents In component percentage.
And the third contact layer is an N-GaAs layer on the medium wave active area structure.
Optionally, the thickness of the second contact layer ranges from 1 μm to 4 μm.
Optionally, in the second contact layer z Ga 1-z The P layer is used as a corrosion barrier layer and a signal isolation layer, wherein the In component z ranges from 45% to 52%.
Optionally, in the second contact layer z Ga 1-z The thickness of the P layer ranges from 20 nm to 100nm.
Optionally, the thickness range of the first AlAs layer and the second AlAs layer of the long-wave active region quantum well structure is 0.2-3nm.
Optionally, a second Al of the long-wave active region quantum well structure x Ga 1-x As layer and third Al x Ga 1-x The thickness of the As layer is 3.5-13nm.
Optionally, a second Al of the medium wave active region quantum well structure y Ga 1-y As layer and third Al y Ga 1-y The As layer thickness ranges from 3 to 13nm.
Optionally, the thickness of the first AlAs layer and the second AlAs layer of the medium wave active region are both in the range of 0.2-3nm.
The beneficial effects of the application are as follows:
1. in the quantum well of the long-wave and medium-wave active regions, alAs with a certain thickness is used at a specific position and is inserted into the AlGaAs barrier layers of the long-wave and medium-wave active regions, so that dark current can be effectively reduced and the detection rate can be improved according to energy band engineering.
2. A certain thickness of In is inserted into the second contact layer z Ga 1-z The P layer is used as a corrosion barrier layer and an isolation layer for medium wave and long wave signals. The etching liquid of InGaP, gaAs and AlGaAs is different, so that the etching liquid can play the role of an etching barrier layer, and the subsequent device process is simplified.
3. A certain thickness of In is inserted into the second contact layer z Ga 1-z The P layer is used as a corrosion barrier layer and an isolation layer for medium wave and long wave signals. In (In) z Ga 1-z The P is undoped, so that long waves and medium waves can be isolated from photocurrent generated, crosstalk is prevented, and the performance of the large-area array multicolor infrared detector can be improved.
Drawings
Fig. 1 shows a schematic diagram of a multi-color quantum well infrared detector structure on a GaAs substrate in accordance with the present application.
Fig. 2 shows a schematic diagram of the structure of a grating layer of the present application for one period.
Fig. 3 shows a schematic structure of a quantum well of a long-wave active region for one period of the present application.
Fig. 4 shows a schematic structural diagram of the second contact layer of the present application.
Fig. 5 shows a schematic diagram of the structure of a wave active region quantum well for one period in the present application.
Fig. 6 shows the peak detection rate curve of a device without an AlAs layer long wave detector inserted into the active region of the present application.
Fig. 7 shows a device peak detection rate curve of an AlAs layer-inserted long wave detector of the present application in an active region.
Detailed Description
In the field of infrared detectors, the absorption wavelength is a near infrared detector with 1-2 microns, the absorption wavelength is a medium-wave infrared detector with 3-6 microns, the absorption wavelength is a long-wave infrared detector with 7-15 microns, the absorption wavelength is a very-long-wave infrared detector with 15-25 microns, and the absorption wavelength is a terahertz wave detector with more than 30 microns. The application relates to a multicolor infrared detector, which has a detection range of 3-6 microns of medium-wave infrared and 7-15 microns of long-wave infrared. The present application will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present application more apparent.
The application relates to a polychromatic quantum well infrared detector structure on a GaAs substrate, see FIGS. 1, 2, 3, 4 and 5, comprising the following structure S 0 -S 6 Is characterized by comprising the following steps:
structure S 0 Semi-insulating GaAs substrate.
Structure S 1 In a semi-insulating GaAs substrate S 0 The upper grating layer, the grating layer structure is from bottom to top: gaAs layer 101 and Al m Ga 1-m As layer 102.
The thickness of the GaAs layer 101 in the grating layer ranges from 0.5 μm to 3 μm, and the Al in the grating layer m Ga 1-m The Al content m of the As layer 102 ranges from 40% to 100%, the thickness range is from 0.5 μm to 3 μm, and the GaAs layer 101 and the Al in the grating layer m Ga 1-m The number of cycles of the structure of the As layer 102 is in the range of 1 to 3 cycles.
Structure S 2 And the first contact layer is arranged on the grating layer and is an N-GaAs layer.
The doping concentration range of the N-GaAs layer in the first contact layer is 1E 17-1E 19 cm -3 The thickness range is 0.3 μm to 3 μm.
Structure S 3 The long-wave active region structure on the first contact layer, wherein the long-wave active region is composed of a plurality of quantum wells, and the quantum well structure sequentially comprises, from bottom to top: first Al x Ga 1-x An As layer 301, a first AlAs layer 302, a second Al x Ga 1-x An As layer 303, an n-GaAs layer 304, and a third Al x Ga 1-x An As layer 305, a second AlAs layer 306 and a fourth Al x Ga 1-x As layer 307.
First Al of the long-wave active region quantum well x Ga 1-x As layer 301 and fourth Al x Ga 1-x The Al component x of the As layer 307 ranges from 2% to 45% and the thickness ranges from 20 nm to 60nm; the second Al of the long wave active region x Ga 1-x As layer 303 and third Al x Ga 1-x The Al component x of the As layer 305 ranges from 2% to 45%, and the thickness ranges from 3.5 nm to 13nm; the first AlAs layer 302 and the second AlAs layer 306 of the long wave active region quantum wellThe n-GaAs layer 304 of the quantum well of the long wave active region has doping concentration ranging from 1E17 to 1E19 and thickness ranging from 2 to 7nm; the period range of the active region quantum well is 4-70 periods.
Structure S 4 A second contact layer on the long wave active region structure, the second contact layer structure sequentially comprises a first N-GaAs layer 401 and In from bottom to top z Ga 1-z A P layer 402 and a second N-GaAs layer 403, in the second contact layer x Ga 1-x The P layer 402 functions as a corrosion barrier and a signal isolation layer.
The total thickness of the second contact layer ranges from 1 mu m to 4 mu m; in the second contact layer z Ga 1-z The P layer 402, wherein the In component z ranges from 45% to 52% and the thickness ranges from 20 nm to 100nm; the doping concentration ranges of the first N-GaAs layer 401 and the second N-GaAs layer 403 in the second contact layer are 1E 17-1E 19 cm -3 。
Structure S 5 The medium wave active region structure on the first contact layer, wherein the medium wave active region is composed of a plurality of quantum wells, and the quantum well structure sequentially comprises, from bottom to top: first Al y Ga 1-y An As layer 501, a first AlAs layer 502, a second Al y Ga 1-y An As layer 503, a first GaAs layer 504, n-In a Ga 1-a An As layer 505, a second GaAs layer 506, and a third Al y Ga 1-y An As layer 507, a second AlAs layer 508 and a fourth Al y Ga 1-y An As layer 509.
First Al of the medium wave active region quantum well y Ga 1-y As layer 501 and fourth Al y Ga 1-y The Al component y of the As layer 509 ranges from 30% to 45%, and the thickness ranges from 20 nm to 60nm; the medium wave active region second Al y Ga 1-y As layer 503 and third Al y Ga 1-y The Al component y of the As layer 507 ranges from 30% to 45%, and the thickness ranges from 3.5 nm to 13nm; the thickness range of the first AlAs layer 502 and the second AlAs layer 508 of the medium wave active region quantum well is 0.2-3nm, the thickness range of the first GaAs layer 504 and the second GaAs layer 506 of the medium wave active region quantum well is 0.2-1nm, and the n-In of the medium wave active region quantum well a Ga 1-a As layer 505, inThe range of the component a is 15% -30%, the doping concentration range is 1E 18-1E 20, and the thickness range is 2-5nm; the period range of the quantum well of the medium wave active region is 4-50 periods.
Structure S 6 And a third contact layer on the medium wave active region structure, wherein the third contact layer is an N-GaAs layer.
The doping concentration range of the third contact layer N-GaAs layer is 1E 17-1E 19 cm -3 The thickness is 0.3 μm to 2 μm.
The quantum well infrared detector structure provided by the application on a GaAs substrate is described in detail by a specific embodiment:
structure 100, at GaAs substrate S 0 The upper grating layer, the grating layer structure is from bottom to top: gaAs layer 101 and Al m Ga 1-m An As layer 102, the thickness of the GaAs layer 101 in the grating layer is 1 μm, the Al in the grating layer m Ga 1-m The Al content m of the As layer 102 is 100% and the thickness is 1 μm, the GaAs layer 101 and the Al in the grating layer m Ga 1-m The number of structural cycles of the As layer 102 is 2 periods.
And a first contact layer on the grating layer, wherein the first contact layer is an N-GaAs layer. The doping concentration of the N-GaAs layer in the first contact layer is 1E18cm -3 The thickness was 2. Mu.m.
The structure 300 is a long-wave active area structure on the first contact layer, the long-wave active area is composed of a plurality of quantum wells, and the quantum well structure sequentially comprises, from bottom to top: first Al x Ga 1-x An As layer 301, a first AlAs layer 302, a second Al x Ga 1-x An As layer 303, an n-GaAs layer 304, and a third Al x Ga 1-x An As layer 305, a second AlAs layer 306 and a fourth Al x Ga 1-x As layer 307. First Al of the long-wave active region quantum well x Ga 1-x As layer 301 and fourth Al x Ga 1-x The Al components x of the As layer 307 were 29% each and the thicknesses thereof were 40nm each; the second Al of the long wave active region x Ga 1-x As layer 303 and third Al x Ga 1-x The Al components x of the As layer 305 are 29% and the thickness is 5nm; the first AlAs layer 302 and the second Al of the long-wave active region quantum wellThe thickness of the As layer 306 is 0.5nm, the doping concentration of the n-GaAs layer 304 of the quantum well of the long-wave active region is 5E17, and the thickness is 5nm; the period of the active region quantum well is 30 periods.
The structure 400, a second contact layer on the long wave active region structure, the second contact layer structure sequentially comprises a first N-GaAs layer 401 and In from bottom to top z Ga 1-z A P layer 402 and a second N-GaAs layer 403, in the second contact layer z Ga 1-z The P layer 402 functions as a corrosion barrier and a signal isolation layer. The total thickness of the second contact layer was 4 μm; in the second contact layer z Ga 1-z P layer 402, where In composition z is 48.5% and thickness is 80nm; the doping concentration of the first N-GaAs layer 401 and the second N-GaAs layer 403 in the second contact layer is 1E18cm -3 。
The structure 500 is a medium wave active area structure on the first contact layer, the medium wave active area is composed of a plurality of quantum wells, and the quantum well structure sequentially comprises from bottom to top: first Al y Ga 1-y An As layer 501, a first AlAs layer 502, a second Al y Ga 1-y An As layer 503, a first GaAs layer 504, n-In a Ga 1-a An As layer 505, a second GaAs layer 506, and a third Al y Ga 1-y An As layer 507, a second AlAs layer 508 and a fourth Al y Ga 1-y An As layer 509. First Al of the long-wave active region quantum well y Ga 1-y As layer 501 and fourth Al y Ga 1-y The Al components y of the As layer 509 are 36% and the thicknesses thereof are 30nm; the second Al of the long wave active region y Ga 1-y As layer 503 and third Al y Ga 1-y The Al components x of the As layer 507 are 36% and the thickness is 5nm; the thicknesses of the first AlAs layer 502 and the second AlAs layer 508 of the long-wave active region quantum well are 0.5nm, the thicknesses of the first GaAs layer 504 and the second GaAs layer 506 of the long-wave active region quantum well are 0.8nm, and the n-In of the long-wave active region quantum well a Ga 1-a An As layer 505, in has a composition a of 22%, a doping concentration of 1E20, and a thickness of 2nm; the period of the active region quantum well is 30 periods.
Structure 600, a third contact layer on the medium wave active region structure, theThe third contact layer is an N-GaAs layer. The doping concentration of the third contact layer N-GaAs layer is 1E18cm -3 The thickness was 0.6. Mu.m.
The absorption spectrum and peak detection rate results of the different active region structures according to fig. 6 and 7 were analyzed. The abscissa is the test bias and the ordinate is the specific detection rate, which is the normalized detection rate.
The structure of the quantum well of the active region of the AlAs layer long-wave detector is not inserted: lower potential barrier Al x Ga 1-x The As layer is 50nm of Al 0.28 Ga 0.72 As, potential well of 5nm n-GaAs with doping concentration of 0.5E17cm -3 Lower potential barrier Al x Ga 1-x The As layer is 50nm of Al 0.28 Ga 0.72 As; the number of active region quantum well cycles was 30 cycles.
The structure of the quantum well of the active region of the AlAs layer long wave detector is inserted: first Al x Ga 1-x As layer 301 is 40nm Al 0.28 Ga 0.72 As, the first AlAs layer 302 is 0.5nm AlAs, the second Al x Ga 1-x As layer 303 is 5nm Al 0.28 Ga 0.72 As, potential well is 5nm n-GaAs layer 304, doping concentration is 0.5E17cm -3 Third Al x Ga 1-x As layer 305 is 5nm Al 0.28 Ga 0.72 As, second AlAs layer 306 is 0.5nm AlAs, fourth Al x Ga 1-x As layer 307 is 40nm Al 0.28 Ga 0.72 As; the number of active region quantum well cycles was 30 cycles.
FIG. 6 shows that the maximum peak detection rate of the device without the AlAs layer infrared detector inserted into the active region quantum well is reached at a test voltage of 4.6V, which is 4.4E10cm.Hz (1/2). W (1).
FIG. 7 shows that the maximum peak detection rate of the device inserted with an AlAs layer infrared detector in the active region quantum well is 6.55E11 cm.Hz (1/2). W (1) at a test voltage of 0.8V.
Comparing the results of fig. 6 and 7, the detection rate of the samples added with the AlAs layer is an order of magnitude higher than that of the samples without the AlAs layer. The design can effectively improve the performance of the detection rate.
While the foregoing is directed to embodiments of the present application, other and further details of the application may be had by the present application, it should be understood that the foregoing description is merely illustrative of the present application and that no limitations are intended to the scope of the application, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the application.

Claims (8)

1. A multi-color quantum well infrared detector structure on a GaAs substrate, the structure comprising:
and the grating layer structure on the GaAs substrate comprises the following components from bottom to top: gaAs layer and Al m Ga 1-m As layer, m represents the percentage of Al composition;
the first contact layer is arranged on the grating layer and is an N-GaAs layer;
the long-wave active region structure on the first contact layer, wherein the long-wave active region is composed of multiple quantum wells, and the long-wave active region quantum well structure sequentially comprises, from bottom to top: first Al x Ga 1-x An As layer, a first AlAs layer, a second Al x Ga 1-x An As layer, an n-GaAs layer, a third Al x Ga 1-x An As layer, a second AlAs layer and a fourth Al x Ga 1-x As layer, x value represents Al component percentage;
the second contact layer on the long wave active region structure comprises a first N-GaAs layer and an In layer from bottom to top z Ga 1-z A P layer and a second N-GaAs layer, in the second contact layer z Ga 1-z The P layer is used as a corrosion barrier layer and a signal isolation layer, and z value represents the percentage of In component;
the medium wave active region structure on the second contact layer, wherein the medium wave active region is composed of multiple quantum wells, and the medium wave active region quantum well structure sequentially comprises, from bottom to top: first Al y Ga 1-y An As layer, a first AlAs layer, a second Al y Ga 1-y An As layer, a first GaAs layer, n-In a Ga 1-a As layer, second GaAs layer, third Al y Ga 1-y An As layer, a second AlAs layer and a fourth Al y Ga 1-y As layerThe y value represents the Al component percentage, and the a value represents the In component percentage;
and the third contact layer is arranged on the medium wave active region structure and is an N-GaAs layer.
2. The multi-color quantum well infrared detector structure on a GaAs substrate of claim 1, wherein the thickness of the second contact layer ranges from 1 μm to 4 μm.
3. The multi-color quantum well infrared detector structure on a GaAs substrate of claim 1, wherein In the second contact layer z Ga 1-z And a P layer, wherein the In component z ranges from 45% to 52%.
4. The multi-color quantum well infrared detector structure on a GaAs substrate of claim 1, wherein In the second contact layer z Ga 1-z The thickness of the P layer is 20-100 nm.
5. The multi-color quantum well infrared detector structure on a GaAs substrate of claim 1, wherein the first AlAs layer and the second AlAs layer of the long wave active region quantum well each have a thickness in the range of 0.2-3nm.
6. The multi-color quantum well infrared detector structure on a GaAs substrate of claim 1, wherein the second Al of the long wave active region quantum well x Ga 1-x As layer and third Al x Ga 1-x The thickness of the As layer is 3.5-13nm.
7. The multi-color quantum well infrared detector structure on a GaAs substrate of claim 1, wherein the second Al of the mid-wave active region quantum well structure y Ga 1-y As layer and third Al y Ga 1-y The As layer thickness ranges from 3 to 13nm.
8. The multi-color quantum well infrared detector structure on a GaAs substrate of claim 1, wherein the first AlAs layer and the second AlAs layer of the medium wave active region quantum well each have a thickness in the range of 0.2-3nm.
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