CN116990853A - Particle detector, scanning electron microscope and semiconductor detection device - Google Patents

Particle detector, scanning electron microscope and semiconductor detection device Download PDF

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Publication number
CN116990853A
CN116990853A CN202310816079.4A CN202310816079A CN116990853A CN 116990853 A CN116990853 A CN 116990853A CN 202310816079 A CN202310816079 A CN 202310816079A CN 116990853 A CN116990853 A CN 116990853A
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Prior art keywords
electrode
scintillator
particle detector
particle
channel
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CN202310816079.4A
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倪冬冬
陈喜亚
李帅辰
孙伟强
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Dongfang Jingyuan Microelectronics Technology Shanghai Co ltd
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Dongfang Jingyuan Microelectronics Technology Shanghai Co ltd
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Priority to CN202310816079.4A priority Critical patent/CN116990853A/en
Publication of CN116990853A publication Critical patent/CN116990853A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

The application belongs to the technical field of particle detection equipment, and particularly relates to a particle detector, a scanning electron microscope and semiconductor detection equipment. The particle detector includes a scintillator, a first electrode, and a second electrode; the first electrode is attached to the surface of the scintillator, and at least part of the surface of the scintillator in the thickness direction is exposed out of the first electrode; the second electrode and the first electrode are arranged at intervals in the thickness direction and form an acceleration zone together with the first electrode and the scintillator, and the second electrode is provided with a particle via hole; the potential of the first electrode is set to be greater than the potential of the second electrode to accelerate particles entering the acceleration region via the particle vias. The particle detector is provided with a first electrode and a second electrode which are arranged at intervals on one side of the thickness direction of the scintillator, and an acceleration region which is suspended on one side of the scintillator and has high-voltage potential is formed, and the acceleration region is used for improving the incident energy of signal electrons on the scintillator so that the scintillator generates stronger optical signals.

Description

Particle detector, scanning electron microscope and semiconductor detection device
Technical Field
The application belongs to the technical field of particle detection equipment, and particularly relates to a particle detector, a scanning electron microscope and semiconductor detection equipment.
Background
The charged particle detector is an integral part of a charged particle (ion or electron beam) instrument, such as a scanning electron microscope. In the existing scanning electron microscope, an electron beam emitted by an electron gun irradiates a designated position on a semiconductor device to be detected and interacts with the semiconductor device to generate signal electrons, and the signal electrons can be incident on a particle detector to be collected by the particle detector and generate gray values of image pixels of the designated position after signal conversion. The rasterization scanning of the appointed area on the semiconductor device can be completed by deflecting the electron beam, and the pixel gray value of the image of each corresponding position can be obtained, so that the image of the appointed area can be obtained.
The incident energy of the signal electrons on the particle detector is one of the important factors determining the image quality, and the incident energy is in direct proportion to the image quality. Currently, the incident energy of signal electrons is generally low, and the acquired image quality is poor.
Disclosure of Invention
The application provides a particle detector, a scanning electron microscope and semiconductor detection equipment, which are used for solving the technical problem of low incidence energy of signal electrons in the prior art.
According to one aspect of the present application, there is provided a particle detector comprising a scintillator, a first electrode, and a second electrode; the first electrode is attached to the surface of the scintillator, and at least part of the surface of the scintillator in the thickness direction is exposed out of the first electrode; the second electrode and the first electrode are arranged at intervals in the thickness direction and form an acceleration zone together with the first electrode and the scintillator, and the second electrode is provided with a particle via hole; the potential of the first electrode is set to be greater than the potential of the second electrode to accelerate particles entering the acceleration region via the particle vias.
In some alternatives, the particle detector further comprises a connector connected to the first electrode for connecting the first electrode to a voltage; the second electrode is arranged to be grounded such that the potential of the first electrode is greater than the potential of the second electrode.
In some alternatives, the particle detector further comprises a support shield connected to the second electrode and enclosing a chamber with the second electrode; the scintillator and the first electrode are accommodated in a chamber, the particle via is communicated with the chamber, and the acceleration region is a part of the chamber.
In some alternatives, the support protective cover includes a support base and a protective cover, the protective cover covers the scintillator and is connected to the protective cover, and the support base is located at one side of the scintillator in a thickness direction and is connected to the protective cover; the second electrode is connected to the protection cover and the support base.
In some alternatives, the particle detector further comprises a first insulating layer disposed within the chamber and between the protective cover and the scintillator to insulate the protective cover and the scintillator from each other.
In some alternatives, the particle detector further comprises a second insulating layer, a portion of the second insulating layer being disposed within the chamber and between the support and the first electrode to insulate the support and the first electrode from each other.
In some alternatives, the particle detector further comprises a light guiding element connected to the scintillator and extending partially out of the chamber.
In some alternatives, the scintillator is provided with a first channel penetrating in the thickness direction; the first electrode comprises a first connecting part and a second connecting part, the first connecting part is attached to the inner wall of the first channel, and the second connecting part is connected to the first connecting part and attached to the lower surface of the scintillator in the thickness direction; the second connection portion is provided with an opening so that at least a portion of the lower surface of the scintillator is exposed to the first electrode.
According to another aspect of the present application, there is provided a scanning electron microscope comprising an electron gun, a magnetic lens group, an accelerating electrode, and the particle detector described above; the particle detector is provided with a second channel, the accelerating area is positioned at the outer side of the second channel in the circumferential direction of the second channel, and the electron gun, the particle detector, the magnetic lens group and the accelerating electrode are sequentially arranged along the axial direction of the second channel; the electron gun is used for emitting electron beams to the sample through the second channel; the magnetic lens group is used for focusing the electron beam on the surface of the sample to generate signal electrons; the accelerating electrode is used for accelerating signal electrons and enters the accelerating region through the particle via hole.
According to still another aspect of the present application, there is provided a semiconductor inspection apparatus including the scanning electron microscope described above.
In summary, the particle detector, the scanning electron microscope and the semiconductor detection device provided by the application have at least the following beneficial effects:
the particle detector provided by the application is characterized in that a first electrode and a second electrode which are arranged at intervals are arranged on one side of the thickness direction of the scintillator, so that an acceleration region which is suspended on one side of the scintillator and has high-voltage potential is formed, and the acceleration region is used for improving the incident energy of signal electrons on the scintillator, so that the scintillator generates a stronger optical signal. Accordingly, the scanning electron microscope with the particle detector can acquire stronger optical signals, so that the imaging quality and the output yield are higher. The semiconductor detection device provided with the scanning electron microscope can acquire clearer image data.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It will be apparent to those skilled in the art that the drawings in the following description are of some embodiments of the application, and that other drawings may be obtained from these drawings without inventive effort.
FIG. 1 is a schematic diagram of a scanning electron microscope provided in accordance with one embodiment of the present application;
fig. 2 is a schematic diagram of the particle detector of fig. 1.
The reference numerals are as follows:
1000. scanning electron microscope;
100. a particle detector; 10. a scintillator; 20. a first electrode; 21. a first connection portion; 22. a second connecting portion; 30. a second electrode; 40. a connecting piece; 50. supporting the protective cover; 51. a support base; 52. a protective cover; 60. a first insulating layer; 70. a second insulating layer; 80. a light guide member;
B. an acceleration region; h0, particle via; h1, the first channel; h2, second channel; r, chamber;
200. an electron gun; 300. a magnetic lens group; 400. an accelerating electrode; 500. and (3) a sample.
Detailed Description
In the description of the present application, it should be understood that, if there are descriptions of terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating orientation or positional relationship, it should be understood that the orientation or positional relationship shown based on the drawings is merely for convenience of description and simplification of the description, and does not indicate or imply that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the application.
Furthermore, the presence of features defining "first" and "second" for descriptive purposes only, should not be interpreted as indicating or implying a relative importance or implicitly indicating the number of features indicated. Features defining "first", "second" may include at least one such defined feature, either explicitly or implicitly. If a description of "a plurality" is present, the generic meaning includes at least two, e.g., two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly stated and limited otherwise, terms such as "mounted," "connected," "secured," and the like are to be construed broadly. For example, the two parts can be fixedly connected, detachably connected or integrated; the connection may be mechanical connection, electrical connection, direct connection, indirect connection through an intermediate medium, communication between two elements or interaction relationship between two elements. The specific meaning of the above terms in the present application can be understood by those skilled in the art according to the specific circumstances.
In the description of the present specification, the terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., as used herein, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
Fig. 1 is a schematic diagram of a scanning electron microscope 1000 provided according to one embodiment of the present application. Referring to fig. 1, the scanning electron microscope 1000 includes an electron gun 200, a particle detector 100, a magnetic lens assembly 300, and an accelerating electrode 400. The particle detector 100 is provided with a second channel H2, and the electron gun 200, the particle detector 100, the magnetic lens group 300, and the accelerating electrode 400 are sequentially arranged along the axial direction of the second channel H2. The scanning electron microscope 1000 is used for acquiring image data of a sample 500, the sample 500 is a semiconductor device, such as a wafer, and the sample 500 is located at the lower side of the accelerating electrode 400 in the axial direction of the second channel H2.
Wherein the electron gun 200 is adapted to emit an electron beam towards the sample 500 through the second channel H2. That is, the electron gun 200 is capable of emitting an electron beam and is incident on the sample 500 located downstream via the second channel H2 on the particle detector 100.
The magnetic lens assembly 300 is used to focus an electron beam on the surface of the sample 500 to generate signal electrons. That is, the magnetic lens group 300 focuses the electron beam to form a fine probe with concentrated energy to be incident on the surface of the sample 500 and to interact with the surface of the sample 500 to generate signal electrons. It should be noted that, the signal electrons include secondary electrons and back-scattered electrons, the secondary electrons are electrons emitted after the electron beam excites the surface of the sample 500, and are used for feeding back image data of the surface morphology of the sample 500, and the back-scattered electrons are electrons generated by interaction between the electron beam and the internal electrons of the sample 500 when the electron beam passes through the sample 500, and are used for feeding back internal structural information of the sample 500.
The accelerating electrode 400 serves to accelerate signal electrons so that the signal electrons arrive at the particle detector 100 to be collected by the particle detector 100 and converted into image data at corresponding positions.
It should be noted that the potential difference between the sample 500 and the particle detector 100 is one of the important factors that affect the magnitude of the incident energy of the signal electrons on the particle detector 100, and the incident energy of a single signal electron is generally not greater than 8keV in the prior art.
Fig. 2 is a schematic diagram of the particle detector 100 of fig. 1. Referring to fig. 2, in some alternative embodiments, the particle detector 100 includes a scintillator 10, a first electrode 20, and a second electrode 30. The first electrode 20 is attached to the surface of the scintillator 10, and at least a part of the surface of the scintillator 10 in the thickness direction is exposed to the first electrode 20.
The second electrode 30 is disposed apart from the first electrode 20 in the thickness direction and encloses an acceleration region B together with the first electrode 20 and the scintillator 10, the second electrode 30 is provided with a particle via H0, and the potential of the first electrode 20 is set to be greater than that of the second electrode 30 so that particles entering the acceleration region B via the particle via H0 are accelerated.
The scintillator 10 is a material capable of converting the energy of incident particles into an optical signal. That is, high-energy incident electrons are collected by the scintillator 10, so that the scintillator 10 is stimulated to radiate to generate a light scintillation phenomenon. In a specific application, the surface of the scintillator 10 is plated with an aluminum film or a titanium film to prevent loss of optical signals. The scintillator 10 includes, for example, cerium doped yttrium aluminum crystals (YAG: ce), cerium doped yttrium silicate crystals (YSO: ce), cerium doped lutetium aluminum crystals (LuAG: ce), cerium doped yttrium aluminate crystals (YAP: ce), and the like.
In addition, in the case where the number of signal electrons (incident current) per unit time is unchanged, the incident energy of the signal electrons is proportional to the photon yield of the scintillator 10, i.e., the intensity of the optical signal. The intensity of the optical signal fed back by the particle detector 100 determines the image quality, which is positively correlated with the image quality, i.e. the image quality is proportional to the incident energy at the scintillator 10.
In the present embodiment, the scintillator 10 is provided at its lower side in the thickness direction with the first electrodes 20 and the second electrodes 30 disposed at intervals in the thickness direction, the first electrodes 20 are attached to the lower side surface of the scintillator 10 in the thickness direction such that at least part of the lower side surface is exposed to the first electrodes 20, so that the exposed lower side surface of the scintillator 10 in the thickness direction can collect signal electrons.
The second electrode 30 has a particle via H0 to avoid blocking the transmission of signal electrons. The scintillator 10, the first electrode 20 and the second electrode 30 together enclose an acceleration region B, and the potential of the first electrode 20 is greater than that of the second electrode 30, i.e. a potential difference is formed in the acceleration region B for accelerating signal electrons. In this way, the signal electrons emitted from the sample 500 enter the acceleration region B through the particle via H0 after being accelerated by the acceleration electrode 400, and are further accelerated in the acceleration region B to further increase the incident energy of the signal electrons.
It can be seen that, in the particle detector 100 provided by the present application, the acceleration region B is additionally disposed at the lower side of the scintillator 10 in the thickness direction, compared to the conventional particle detector, for further improving the incident energy of the signal electrons on the scintillator 10. From the foregoing, the incident energy of the signal electrons is proportional to the image quality, and accordingly, the scanning electron microscope 1000 having the particle detector 100 has better imaging quality.
In some situations where the incident energy of the electron beam needs to be switched, the voltage at the sample 500 is generally changed, and after the electron beam is applied to the sample 500 with different incident energy, in order to avoid the difference of the incident energy of the secondary electrons and the back-scattered electrons applied to the particle detector 100, the voltage at the first electrode 20 is adjusted to compensate, so that the energy of the secondary electrons and the back-scattered electrons with different energy reaching the surface of the scintillator 10 is kept consistent, thus reducing the time for image matching by the additional calibration particle detector 100 and improving the output yield of the scanning electron mirror 1000.
In a specific application, the first electrode 20 is a metal electrode, and is generally made of copper or stainless steel. In an alternative embodiment, the second electrode 30 is a metal mesh structure having a plurality of mesh openings, typically made of copper or stainless steel material, with the understanding that each mesh opening is a corresponding particle via H0.
In some alternative embodiments, particle detector 100 further comprises a connector 40, connector 40 being connected to first electrode 20 for connecting first electrode 20 to a voltage. The second electrode 30 is arranged to be grounded such that the potential of the first electrode 20 is greater than the potential of the second electrode 30.
In the present embodiment, the first electrode 20 is connected to a high voltage through the connection member 40, and the second electrode 30 is grounded, i.e., 0V, so as to form the acceleration region B having a potential difference. It should be noted that the sample 500 is connected to a negative potential, i.e. the potential increases from the sample 500 in the direction of the particle detector 100 for accelerating signal electrons.
As can be seen from the foregoing, the surface of the scintillator 10 is plated with an aluminum film or a titanium film, and the first electrode 20 is attached to the surface of the scintillator 10, so that the scintillator 10 and the first electrode 20 are at the same potential.
In a specific application, the connection member 40 may be a wire, and the high voltage of the first electrode 20 connected through the connection member 40 is between 1kV and 10kV, so as to ensure that the incident energy of the single signal electron after being accelerated again through the acceleration region B is not lower than 10keV, so as to ensure the image quality.
In some alternative embodiments, particle detector 100 further includes a support shield 50, support shield 50 being coupled to second electrode 30 and enclosing chamber R with second electrode 30. The scintillator 10 and the first electrode 20 are accommodated in a chamber R, the particle via H0 communicates with the chamber R, and the acceleration region B is a part of the chamber R.
In this embodiment, the supporting protection cover 50 and the second electrode 30 cooperate to form a chamber R for protecting the scintillator 10, the acceleration region B is a part of the chamber R, the particle via H0 is connected to the chamber R, that is, is connected to the acceleration region B, and the signal electrons can reach the surface of the scintillator 10 in the chamber R through the particle via H0 via the acceleration region B.
In a specific application, the supporting protection cover 50 is a metal piece, and copper, aluminum alloy, stainless steel, etc. are generally selected, and the second electrode 30 is connected to the supporting protection cover 50 and grounded, so that the supporting protection cover 50 is also in a grounded state.
In some alternative embodiments, the scintillator 10 is provided with a first channel H1, a second channel H2 is disposed on the support-protection cover 50, and a portion of the support-protection cover 50 is disposed in the first channel H1, so that the second channel H2 is located inside the first channel H1.
In a specific application, the first channel H1 and the second channel H2 may be through holes and coaxially arranged, and the second channel H2 allows the electron beam to pass through, and is at zero potential due to the connection of the support protection cover 50 and the second electrode 30 and grounding, so as not to affect the incident energy of the electron beam. It can be seen that the particle detector 100 provided in this embodiment controls the acceleration region B having the potential difference in the chamber R, so as to avoid affecting the incident energy of the electron beam.
It should be noted that, the axial direction of the second channel H2 is the thickness direction of the scintillator 10, the embodiment shown in fig. 2 only shows a schematic axial cross-sectional view of the particle detector 100 in the second channel H2, the scintillator 10 is in an annular structure, the through hole in the middle is the first channel H1, and correspondingly, the support protection cover 50 is formed with an annular cavity to accommodate the annular structure of the scintillator 10, and the through hole in the middle is the second channel H2.
In some alternative embodiments, the supporting protective cover 50 includes a supporting base 51 and a protective cover 52, the protective cover 52 covering the scintillator 10 and being connected to the protective cover 52, the supporting base 51 being located on one side of the scintillator 10 in the thickness direction and being connected to the protective cover 52. The second electrode 30 is connected to the protection cover 52 and the support base 51.
In the present embodiment, the protective cover 52 is opened at the lower side of the thickness direction of the scintillator 10 so as to cover the scintillator 10, the protective cover 52 is mounted on the supporting seat 51, the supporting seat 51 is located at the position of the lower opening of the protective cover 52, the second electrode 30 is connected between the protective cover 52 and the supporting seat 51 so as to cover the lower opening of the protective cover 52, and the supporting seat 51 cooperates with the second electrode 30 to support the protective cover 52, and the particle via hole H0 is provided on the second electrode 30, so that the incidence of the signal electrons is not blocked.
In some alternative embodiments, the first electrode 20 includes a first connection portion 21 and a second connection portion 22, the first connection portion 21 is attached to an inner wall of the first channel H1, and the second connection portion 22 is connected to the first connection portion 21 and attached to a lower surface of the scintillator 10 in the thickness direction. The second connection portion 22 is provided with an opening so that at least a part of the lower surface of the scintillator 10 is exposed to the first electrode 20.
As can be seen from the foregoing, the scintillator 10 has a ring-shaped structure. In the present embodiment, the second connection portion 22 has a double-layer annular structure in the radial direction of the first channel H1, and the inner and outer double rings of the second connection portion 22 are disposed at intervals in the radial direction of the first channel H1 to form openings, thereby exposing a portion of the lower surface of the scintillator 10.
Wherein, the inner ring of the second connecting portion 22 is arranged near the first channel H1, and the first connecting portion 21 is connected to the inner ring of the second connecting portion 22 and is attached to the inner wall of the first channel H1, i.e. is arranged near the inner edge of the scintillator 10; the outer ring of the second connection portion 22 is disposed near the outer edge of the scintillator 10 so that the exposed area of the lower surface of the scintillator 10 is sufficiently large. In addition, the lower side opening of the protective cover 52 at least partially overlaps with the projection of the exposed lower surface of the scintillator 10 in the thickness direction of the scintillator 10 to ensure the passage of signal electrons.
In the present embodiment, the internal and external relationship of the particle detector 100 is determined based on the axis of the second channel H2.
In some alternative embodiments, the particle detector 100 further includes a first insulating layer 60, the first insulating layer 60 disposed within the chamber R and between the protective cover 52 and the scintillator 10 to insulate the protective cover 52 and the scintillator 10 from each other.
As can be seen from the foregoing, the support protective cover 50 is made of a metal material, and the surface of the scintillator 10 is plated with a metal film and is attached to the first electrode 20, so that the scintillator 10 is also at a high potential. In the present embodiment, the protective cover 52 and the scintillator 10 are insulated from each other by the first insulating layer 60 so that the protective cover 52 is in a state of zero potential. Since the second passageway H2 is provided on the protective cover 52, the incident energy of the electron beam is prevented from being affected by the protective cover 52 being at a high potential.
It should be noted that, the first insulating layer 60 may be an integrated insulating layer, or may be formed by splicing multiple insulating layer segments, which is not limited in particular.
In some alternative embodiments, particle detector 100 further includes a second insulating layer 70, a portion of second insulating layer 70 disposed within chamber R and between support 51 and first electrode 20 to insulate support 51 and first electrode 20 from each other.
As can be seen from the foregoing, the support base 51 is connected to the protective cover 52 and the second electrode 30, if the support base 51 is connected to the first electrode 20, the entire support protective cover 50 and the second electrode 30 are necessarily at the same high potential with the first electrode 20 and the scintillator 10, so as to affect the incidence of the electron beam and the signal electrons. In the present embodiment, the support base 51 and the first electrode 20 are insulated from each other by the second insulating layer 70 to ensure that the entire support protective cover 50 is at zero potential.
In a specific application, the first insulating layer 60 and the second insulating layer 70 are made of high voltage insulating materials, such as ceramic layers.
In some alternative embodiments, particle detector 100 further includes a light guiding element 80, light guiding element 80 being coupled to scintillator 10 and extending partially out of chamber R.
From the foregoing, the scintillator 10 converts the incident energy of the signal electrons into an optical signal. In this embodiment, the photoconductive element 80 is used to transmit an optical signal that can be processed by an electrical component downstream of the photoconductive element 80.
In a specific application, the photoconductive element 80 comprises, for example, a photoconductive rod, an optical fiber, etc., and the photoconductive element 80 transmits an optical signal to an optical sensor, including, for example, a photomultiplier tube, a photodiode, etc., to convert the optical signal into an electrical signal, which is passed through a signal processing circuit to filter, amplify, analog-to-digital convert, etc., the electrical signal, and thereby digitize the electrical signal to finally be converted into an image.
In summary, the particle detector 100 provided by the present application arranges the first electrode 20 and the second electrode 30 at intervals on one side of the scintillator 10 in the thickness direction, and forms the acceleration region B with high voltage potential suspended on one side of the scintillator 10, where the acceleration region B is used to increase the incident energy of the signal electrons on the scintillator 10, so that the scintillator 10 generates a strong optical signal. In addition, the acceleration region B is limited to the chamber R surrounded by the support shield 50 and the second electrode 30, and thus the incident energy of the electron beam is not affected.
The scanning electron microscope 1000 provided with the particle detector 100 can acquire a stronger optical signal, and thus has higher imaging quality and output yield. In the case where it is necessary to switch the incident energy of the electron beam by changing the potential at the sample 500, the energy of the secondary electrons and the back-reflected electrons reaching the surface of the scintillator 10 can be made uniform by adjusting the high voltage introduced by the first electrode 20 to compensate, reducing the tuning time.
In another aspect, the present application further provides a semiconductor inspection apparatus, which includes the above-mentioned sem 1000, so that all the advantages brought by the above-mentioned sem 1000 are obviously provided, and the description thereof is not repeated here.
While embodiments of the present application have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives, and variations may be made to the above embodiments by those skilled in the art within the scope of the application.

Claims (10)

1. A particle detector comprising a scintillator, a first electrode, and a second electrode;
the first electrode is attached to the surface of the scintillator, and at least part of the surface of the scintillator in the thickness direction is exposed out of the first electrode;
the second electrode and the first electrode are arranged at intervals in the thickness direction and enclose an acceleration zone together with the first electrode and the scintillator, and the second electrode is provided with a particle via hole;
the potential of the first electrode is set to be greater than the potential of the second electrode to accelerate particles entering the acceleration region via the particle vias.
2. A particle detector as claimed in claim 1 wherein,
the particle detector further comprises a connecting piece, wherein the connecting piece is connected to the first electrode and is used for connecting the first electrode to voltage;
the second electrode is arranged to be grounded such that the potential of the first electrode is greater than the potential of the second electrode.
3. A particle detector as claimed in claim 1 wherein,
the particle detector further comprises a support protective cover which is connected with the second electrode and encloses a cavity together with the second electrode;
the scintillator and the first electrode are housed in the chamber, the particle via communicates with the chamber, and the acceleration region is a portion of the chamber.
4. A particle detector as claimed in claim 3 wherein,
the support protection cover comprises a support seat and a protection cover, the protection cover covers the scintillator and is connected with the protection cover, and the support seat is positioned on one side of the scintillator in the thickness direction and is connected with the protection cover;
the second electrode is connected to the protective cover and the supporting seat.
5. The particle detector of claim 4, further comprising a first insulating layer disposed within the chamber and between the protective cover and the scintillator to insulate the protective cover and the scintillator from each other.
6. The particle detector of claim 4, further comprising a second insulating layer, a portion of the second insulating layer disposed within the chamber and between the support and the first electrode to insulate the support and the first electrode from each other.
7. A particle detector as claimed in claim 3 further comprising a light guiding element connected to the scintillator and extending partially out of the chamber.
8. A particle detector as claimed in claim 1 wherein,
the scintillator is provided with a first channel in a penetrating manner along the thickness direction;
the first electrode comprises a first connecting part and a second connecting part, the first connecting part is attached to the inner wall of the first channel, and the second connecting part is connected to the first connecting part and attached to the lower surface of the scintillator in the thickness direction;
the second connection portion is provided with an opening so that at least a portion of the lower surface of the scintillator is exposed to the first electrode.
9. A scanning electron microscope comprising an electron gun, a magnetic lens assembly, an accelerating electrode and a particle detector according to any of claims 1 to 8;
the particle detector is provided with a second channel, the acceleration region is positioned outside the second channel in the circumferential direction of the second channel, and the electron gun, the particle detector, the magnetic lens group and the acceleration electrode are sequentially arranged along the axial direction of the second channel;
the electron gun is used for emitting electron beams to the sample through the second channel;
the magnetic lens group is used for focusing the electron beam on the surface of the sample to generate signal electrons;
the accelerating electrode is used for accelerating the signal electrons and entering the accelerating region through the particle via hole.
10. A semiconductor inspection apparatus comprising the scanning electron microscope according to claim 9.
CN202310816079.4A 2023-07-04 2023-07-04 Particle detector, scanning electron microscope and semiconductor detection device Pending CN116990853A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310816079.4A CN116990853A (en) 2023-07-04 2023-07-04 Particle detector, scanning electron microscope and semiconductor detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310816079.4A CN116990853A (en) 2023-07-04 2023-07-04 Particle detector, scanning electron microscope and semiconductor detection device

Publications (1)

Publication Number Publication Date
CN116990853A true CN116990853A (en) 2023-11-03

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CN202310816079.4A Pending CN116990853A (en) 2023-07-04 2023-07-04 Particle detector, scanning electron microscope and semiconductor detection device

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