CN116989661A

CN116989661A - Sensor

Info

Publication number: CN116989661A
Application number: CN202310960479.2A
Authority: CN
Inventors: 邓文俊; 黄雨佳; 袁永帅; 周文兵
Original assignee: Shenzhen Voxtech Co Ltd
Current assignee: Shenzhen Voxtech Co Ltd
Priority date: 2023-07-31
Filing date: 2023-07-31
Publication date: 2023-11-03

Abstract

An embodiment of the present disclosure provides a sensor, including: a flexible substrate and a first sensing structure including a multilayer structure arranged on one side surface in a thickness direction of the flexible substrate; each layer of the multilayer structure of the first sensing structure is stacked along the thickness direction of the flexible substrate; the multilayer structure of the first sensing structure includes a first conductive layer and a second conductive layer, the first conductive layer and the second conductive layer being disposed adjacent; the second conductive layer is positioned between the first conductive layer and the flexible substrate; the resistance of the second conductive layer varies with the deformation of the flexible substrate.

Description

Sensor

Technical Field

The present disclosure relates to the field of electronic components, and in particular, to a sensor.

Background

With the gradual maturation of AR/VR technology and the rise of metauniverse concepts, intelligent wearable devices have put forward higher requirements on man-machine interaction technology. The sensor can be integrated on intelligent wearing equipment (such as motion capture clothes, myoelectricity clothes, motion capture gloves and the like), and can realize accurate identification and restoration of human body motions through sensing bending conditions, so that the sensor is one of the important bottom technologies in the universe and is widely focused and studied.

Therefore, how to improve the accuracy and convenience of detecting the bending condition of the sensor is a technical problem to be solved in the art.

Disclosure of Invention

Embodiments of the present specification provide a sensor, comprising: a flexible substrate and a first sensing structure including a multilayer structure arranged on one side surface in a thickness direction of the flexible substrate; each layer of the multilayer structure of the first sensing structure is stacked along the thickness direction of the flexible substrate; the multilayer structure of the first sensing structure includes a first conductive layer and a second conductive layer, the first conductive layer and the second conductive layer being disposed adjacent; the second conductive layer is positioned between the first conductive layer and the flexible substrate; the resistance of the second conductive layer varies with the deformation of the flexible substrate.

The flexible substrate is subjected to bending deformation, so that the second conductive layer can be deformed, and the resistance of the second conductive layer can be changed along with the deformation of the flexible substrate. Therefore, the change in the resistance of the second conductive layer or a parameter related to the resistance can reflect the bending of the sensor. The bending condition of the sensor can be accurately sensed through the change condition of the resistor or the parameter related to the resistor. In addition, since the first conductive layer is adjacent to the second conductive layer, the first conductive layer can serve as an electrode to draw out a signal to collect a parameter related to the resistance of the second conductive layer.

The acquisition of the relevant parameters of the resistance of the second conductive layer is very simple, which makes the sensor also more convenient for detecting bending situations.

In some embodiments, the electrical conductivity of both the first conductive layer and the flexible substrate is greater than the electrical conductivity of the second conductive layer; the second conductive layer is disposed adjacent to the flexible substrate.

Since both the first conductive layer and the flexible substrate are arranged adjacent to the second conductive layer, the first conductive layer and the flexible substrate can be used as electrodes to conveniently draw out parameters related to the resistance of the second conductive layer, respectively.

In some embodiments, the multilayer structure further comprises a third conductive layer, the first conductive layer, the second conductive layer, and the third conductive layer being disposed adjacent to one another in sequence in a thickness direction of the flexible substrate; the second conductive layer and the third conductive layer are both located between the first conductive layer and the flexible substrate; the conductivity of the first conductive layer and the third conductive layer is greater than the conductivity of the second conductive layer; the electrical conductivity of the flexible substrate is less than or equal to the electrical conductivity of the second conductive layer.

Because the first conductive layer and the third conductive layer are adjacent to the second conductive layer, the lead is led out through the first conductive layer and the third conductive layer, and parameters related to the resistance of the second conductive layer can be conveniently read. And the flexible substrate can be made of insulating flexible material or high-resistance flexible material, the conductivity of the flexible substrate is not required, and a plurality of possibilities are provided for the structural design of the processor.

In some embodiments, a resistance-related parameter of the second conductive layer is read by a processing circuit.

The bending condition of the sensor can be accurately sensed through the change condition of the resistor or the parameter related to the resistor. The acquisition of the relevant parameters of the resistance of the second conductive layer is very simple, which makes the sensor also more convenient for detecting bending situations.

In some embodiments, the parameters of the second conductive layer related to capacitance and resistance are read by a processing circuit.

Because the capacitance and the resistance of the second conductive layer can change when the sensor is bent and deformed, the processing circuit reads the parameters related to the capacitance and the resistance of the second conductive layer, the change of the resistance and the change of the capacitance of the second conductive layer can jointly reflect the bending angle of the sensor, and the bending deformation of the sensor can be sensitively and accurately sensed by reading the parameters related to the capacitance and the resistance of the second conductive layer.

In some embodiments, the multilayer structure further comprises another first conductive layer and another second conductive layer; the electrical conductivities of the flexible substrate, the first conductive layer and the other first conductive layer are all greater than that of the second conductive layer, and the electrical conductivities of the flexible substrate, the first conductive layer and the other first conductive layer are all greater than that of the other second conductive layer; the first conductive layer, the second conductive layer, the other first conductive layer and the other second conductive layer are arranged adjacently in order in the thickness direction of the flexible substrate; the further second conductive layer is arranged adjacent to the flexible substrate.

The first conductive layer and the further first conductive layer may conveniently serve as electrodes for extracting signals related to the capacitance and resistance of the second conductive layer, and the further first conductive layer and the flexible substrate may conveniently serve as electrodes for extracting signals related to the capacitance and resistance of the further second conductive layer. The second conductive layer and the further second conductive layer may be equivalently two capacitances connected in parallel such that the total capacitance of the sensor increases. Due to the increase of the total capacitance, the accuracy and sensitivity of the sensor can be improved.

In some embodiments, the first conductive layer and the flexible substrate are grounded; the other first conductive layer is connected with a voltage output device of the processing circuit through a fixed resistor.

The voltage output device supplies a voltage to the second conductive layer and the further second conductive layer. The grounding of the flexible substrate can completely shield the two sensing structures (the first sensing structure and the second sensing structure), so that mutual interference between the two sensing structures due to coupling capacitance is reduced, and the reliability of the sensor is improved.

In some embodiments, the multilayer structure further comprises another first conductive layer, another second conductive layer, and a fifth conductive layer; the first conductive layer, the second conductive layer, the other first conductive layer, the other second conductive layer and the fifth conductive layer are sequentially adjacently arranged in the thickness direction of the flexible substrate; the conductivity of the flexible substrate is smaller than or equal to the conductivity of the second conductive layer, and the conductivity of the flexible substrate is smaller than or equal to the conductivity of the other second conductive layer; the conductivities of the first conductive layer, the fifth conductive layer and the other first conductive layer are all larger than the conductivities of the second conductive layer, and the conductivities of the first conductive layer, the fifth conductive layer and the other first conductive layer are all larger than the conductivities of the other second conductive layer.

The first conductive layer and the further first conductive layer may conveniently serve as electrodes for extracting signals related to the capacitance and the resistance of the second conductive layer, and the further first conductive layer and the fifth conductive layer may conveniently serve as electrodes for extracting signals related to the capacitance and the resistance of the further second conductive layer. The second conductive layer and the further second conductive layer may be equivalently two capacitances connected in parallel such that the total capacitance of the sensor increases. Due to the increase of the total capacitance, the accuracy and sensitivity of the sensor can be improved. The fifth conductive layer and the first conductive layer are respectively led out to be connected with the processing circuit, the conductivity of the flexible substrate is not required, and the flexible substrate can be made of an insulating flexible material or a high-resistance flexible material.

In some embodiments, the first conductive layer and the fifth conductive layer are grounded, and a lead led out from the other first conductive layer is connected to a voltage output device of the processing circuit through a fixed resistor.

The voltage output device supplies a voltage to the second conductive layer and the further second conductive layer. The grounding of the fifth conductive layer can completely shield the two sensing structures (the first sensing structure and the second sensing structure), so that mutual interference between the two sensing structures due to coupling capacitance is reduced, and the reliability of the sensor is improved.

In some embodiments, the parameters related to capacitance and resistance of the second conductive layer and the further second conductive layer are read by a processing circuit.

The second conductive layer and the other second conductive layer can change in capacitance and resistance when the sensor is bent and deformed, the processing circuit is used for reading parameters related to the capacitance and the resistance of the second conductive layer and the other second conductive layer, the resistance change and the capacitance change of the second conductive layer and the other second conductive layer can jointly reflect the bending angle of the sensor, and the bending deformation of the sensor can be sensitively and accurately sensed by reading the parameters related to the capacitance and the resistance of the second conductive layer and the other second conductive layer.

In some embodiments, the voltage output device of the processing circuit outputs a pulsed voltage, and the capacitance and resistance related parameters include voltage values at a plurality of points in time.

The voltage detection device of the processing circuit reads the voltage values at a plurality of different time points, and the output voltage of the sensing structure at the corresponding time point can be determined by bringing the time for reading the voltage values into the output voltage formula of the sensing structure.

In some embodiments, the saturation voltage amplitude on the second conductive layer is less than the pulse voltage amplitude.

Since the second conductive layer may be equivalently a parallel connection of a resistive element and a capacitive element, the resistance of the second conductive layer cannot be regarded as infinity, which affects the output voltage of the first sensing structure and the output voltage of the second sensing structure, so that the saturation voltage amplitude on the second conductive layer is smaller than the amplitude of the pulse voltage.

In some embodiments, the sensor further comprises a second sensing structure; the second sensing structure includes a multilayer structure disposed on the other side surface in the thickness direction of the flexible substrate; each layer of the multilayer structure of the second sensing structure is stacked along the thickness direction of the flexible substrate; the multilayer structure of the second sensing structure also includes a first conductive layer and a second conductive layer, the first conductive layer of the second sensing structure and the second conductive layer of the second sensing structure being disposed adjacent; the conductivity of the first conductive layer of the second sensing structure is greater than that of the second conductive layer of the second sensing structure, and the second conductive layer of the second sensing structure is positioned between the first conductive layer of the second sensing structure and the flexible substrate; the resistance of the second conductive layer of the second sensing structure changes with the deformation of the flexible substrate.

By arranging two sensing structures (a first sensing structure and a second sensing structure), the total variation of the resistance after data processing (such as differential processing) is increased due to the opposite variation trend of the two sensing structures, so that the sensing sensitivity of the sensor can be increased. And, the sensor with the first sensing structure and the second sensing structure can effectively prevent the influence of wrinkles. In addition, by arranging two sensing structures, particularly arranging the first sensing structure and the second sensing structure symmetrically in the thickness direction of the flexible substrate, common-mode interference can be effectively eliminated.

In some embodiments, the detection parameters of the first and second sensing structures are read by a processing circuit, respectively; wherein the detection parameters include: a parameter related to resistance or a parameter related to capacitance and resistance of the second conductive layer of the first sensing structure or a parameter related to resistance or a parameter related to capacitance and resistance of the second conductive layer of the second sensing structure; and performing differential processing on the detection parameters of the first sensing structure and the detection parameters of the second sensing structure through the processing circuit, and determining deformation parameters of the flexible substrate based on the differential processing result.

The processing circuit can conduct differential processing on detection parameters of two sensing structures in the sensing unit, so that common mode signals are filtered, differential mode signals are amplified, influence of external factors on sensor sensing is reduced, and accuracy of sensing bending deformation of the sensor is improved.

In some embodiments, the saturation voltage amplitude of the second conductive layer of the first sensing structure is not equal to the saturation voltage amplitude of the second conductive layer of the second sensing structure.

The change conditions of the second conductive layer of the first sensing structure and the second conductive layer of the second sensing structure are different, so that the saturation voltage amplitude of the second conductive layer of the first sensing structure is not equal to the saturation voltage amplitude of the second conductive layer of the second sensing structure.

In some embodiments, the sensor further comprises a third sensing structure and a fourth sensing structure; the third sensing structure includes a multilayer structure disposed on one side surface in the width direction of the flexible substrate; the fourth sensing structure includes a multilayer structure disposed on the other side surface in the width direction of the flexible substrate; each layer of the multilayer structure of the third sensing structure is stacked along the width direction of the flexible substrate, and each layer of the multilayer structure of the fourth sensing structure is stacked along the width direction of the flexible substrate; the multilayer structures of the third and fourth sensing structures each include a sixth conductive layer and a seventh conductive layer, the sixth and seventh conductive layers being disposed adjacent; the conductivity of the sixth conductive layer is greater than the conductivity of the seventh conductive layer, the seventh conductive layer being located between the sixth conductive layer and the flexible substrate; the resistance of the seventh conductive layer varies with the deformation of the flexible substrate.

By arranging four sensor structures, the sensor sensitive to deformation (such as bending deformation) in different directions can be realized.

In some embodiments, the first conductive layer, the second conductive layer, and the flexible substrate each comprise an elastic material.

The elastic material may allow the first conductive layer, the second conductive layer, and the flexible substrate to return to an original shape when the applied external force is removed.

In some embodiments, the elastic material of the first conductive layer and the elastic material of the second conductive layer are both filled with conductive particles; the density of the conductive particles filled in the elastic material of the first conductive layer is greater than the density of the conductive particles filled in the elastic material of the second conductive layer.

The conductivity of the conductive layer can be adjusted by the density of the filled conductive particles in the elastic material.

In some embodiments, the width of the first conductive layer is less than or equal to the width of the second conductive layer; the width of the second conductive layer is less than or equal to the width of the flexible substrate.

Through such width setting, when guaranteeing that the signal of second conducting layer can stably read, have guaranteed that sensor structure rule, stability can guarantee user's use experience after being applied to intelligent wearing equipment.

In some embodiments, a first protective structure is also included that covers a side of the first conductive layer that is remote from the flexible substrate.

The first protection structure may isolate an outer surface of the first conductive layer from an external environment to protect the sensor.

In some embodiments, the exposed surface of the flexible substrate is covered with a second protective structure.

The second protective structure may isolate the flexible substrate from the external environment to protect the sensor.

Drawings

The present specification will be further elucidated by way of example embodiments, which will be described in detail by means of the accompanying drawings. The embodiments are not limiting, in which like numerals represent like structures, wherein:

FIG. 1A is a schematic cross-sectional view of a sensor according to some embodiments of the present disclosure;

FIG. 1B is a schematic cross-sectional view of a sensor having two sensing structures according to some embodiments of the present disclosure;

FIG. 2A is a schematic diagram of the principle of resistance change of the sensor shown in FIG. 1A;

FIG. 2B is a schematic diagram of the principle of resistance change of the sensor shown in FIG. 1B;

FIG. 2C is a schematic illustration of a sensor with folds;

FIG. 3 is an equivalent circuit diagram of the sensor shown in FIG. 1B;

FIG. 4A is a schematic cross-sectional view of a sensor according to other embodiments of the present disclosure;

FIG. 4B is a schematic cross-sectional view of a sensor having two sensing structures according to other embodiments of the present disclosure;

FIG. 5A is a schematic cross-sectional view of a sensor according to further embodiments of the present disclosure;

FIG. 5B is a schematic cross-sectional view of a sensor having two sensing structures according to further embodiments of the present disclosure;

FIG. 6A is an equivalent circuit diagram of the sensor shown in FIG. 5A;

FIG. 6B is an equivalent circuit diagram of the sensor shown in FIG. 5B;

FIG. 7A is a schematic cross-sectional view of a sensor according to further embodiments of the present disclosure;

FIG. 7B is a schematic cross-sectional view of a sensor having two sensing structures according to further embodiments of the present disclosure;

FIG. 8A is an equivalent circuit diagram of the sensor shown in FIG. 7A;

FIG. 8B is an equivalent circuit diagram of the sensor shown in FIG. 7B;

FIG. 9A is a schematic cross-sectional view of a sensor according to other embodiments of the present disclosure;

FIG. 9B is a schematic cross-sectional view of a sensor having two sensing structures according to other embodiments of the present disclosure;

FIG. 10 is a schematic diagram of output voltages according to some embodiments of the present disclosure;

11A-11C are schematic cross-sectional views of a sensor having four sensing structures according to some embodiments of the present description.

Detailed Description

In order to more clearly illustrate the technical solutions of the embodiments of the present specification, the drawings used in the description of the embodiments will be briefly described below. It is apparent that the drawings in the following description are only some examples or embodiments of the present specification, and it is possible for those of ordinary skill in the art to apply the present specification to other similar situations according to the drawings without inventive effort. It should be understood that these exemplary embodiments are presented merely to enable one skilled in the relevant art to better understand and practice the present description, and are not intended to limit the scope of the present description in any way. Unless otherwise apparent from the context of the language or otherwise specified, like reference numerals in the figures refer to like structures or operations.

As used in this specification and the claims, the terms "a," "an," "the," and/or "the" are not specific to a singular, but may include a plurality, unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that the steps and elements are explicitly identified, and they do not constitute an exclusive list, as other steps or elements may be included in a method or apparatus. The term "based on" is based at least in part on. The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment".

In the description of the present specification, it should be understood that the azimuth or positional relationship indicated by the terms "thickness direction", "width direction", etc. are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience of description of the present specification and simplification of the description, and are not indicative or implying that the apparatus or element in question must have a specific azimuth, be configured and operated in a specific azimuth, and thus should not be construed as limiting the present specification.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present specification, the meaning of "plurality" means at least two, for example, two, three, etc., unless explicitly defined otherwise.

Embodiments of the present specification provide a sensor. The sensor may be disposed on a smart wearable device (e.g., a motion capture suit, a myoelectric suit, a motion capture glove, etc.). The actions of the user wearing the smart wearable device may lead to deformation of the smart wearable device, which in turn leads to deformation (e.g. bending, stretching, compression, etc.) of the sensor. In some embodiments, the sensor may be a flexible sensor, which refers to a sensor that is more prone to deformation when subjected to an external force. The sensor senses the deformation condition of the sensor, so that the accurate identification and restoration of the human body action can be realized. For example, the sensor can sense the bending condition (such as bending angle and bending direction) of the sensor, so that the accurate identification and restoration of the human body action are realized.

The first sensing structure is arranged on one side surface of the flexible substrate of the sensor in the thickness direction, and the flexible substrate of the first sensing structure is flexible and can be bent and deformed along with deformation of the intelligent wearing equipment. The first sensor may include a multi-layered structure including a first conductive layer and a second conductive layer adjacent to each other, which are disposed on one side surface in a thickness direction of the flexible substrate. The flexible substrate is subjected to bending deformation, so that the second conductive layer can be deformed, and the resistance of the second conductive layer can be changed along with the deformation of the flexible substrate. Therefore, the change of the resistance or the parameter related to the resistance of the second conductive layer can reflect the bending condition (such as bending angle and bending direction) of the sensor. The bending condition of the sensor can be accurately sensed through the change condition of the resistor or the parameter related to the resistor. In addition, since the first conductive layer is adjacent to the second conductive layer, the first conductive layer can serve as an electrode to draw out a signal to collect a parameter related to the resistance of the second conductive layer. The acquisition of the relevant parameters of the resistance of the second conductive layer is very simple, which makes the sensor also more convenient for detecting bending situations.

Fig. 1A is a schematic cross-sectional view of a sensor 1 according to some embodiments of the present description. In some embodiments, as shown in fig. 1A, the sensor 1 includes a flexible substrate 11 and a first sensing structure 12. The first sensing structure 12 includes a multilayer structure arranged on one side surface in the thickness direction of the flexible substrate 11. The layers of the multilayer structure of the first sensing structure 12 are stacked in the thickness direction of the flexible substrate 11. The multi-layer structure of the first sensing structure 12 comprises a first conductive layer 121 and a second conductive layer 122. The first conductive layer 121 and the second conductive layer 122 are adjacently arranged. The second conductive layer 122 is disposed between the first conductive layer 121 and the flexible substrate 11. The resistance of the second conductive layer 122 varies with the deformation of the flexible substrate 11.

The thickness direction of the flexible substrate 11 may be the t direction in the drawing (fig. 1A). The first sensing structure 12 comprises a plurality of layered structures. Stacking the layers of the multilayer structure of the first sensing structure 12 in the thickness direction of the flexible substrate 11 can be understood as: each of the plurality of layered structures of the first sensing structure 12 is arranged along the thickness direction of the flexible substrate 11 and stacked together.

The flexible substrate 11 may serve as a support substrate to provide support for the first sensing structure 12. The flexible substrate 11 may include a flexible material, and the flexible substrate 11 is easily deformed (e.g., bent) when subjected to an external force due to its flexible nature. The first sensing structure 12 is a sensing structure that can be used for measuring bending deformations of the sensor 1. The first conductive layer 121 and the second conductive layer 122 are each made of a conductive material or a layered structure in which a conductive material is incorporated during the manufacturing process. In some embodiments, the first conductive layer 121 and the second conductive layer 122 may also comprise flexible materials, with the first conductive layer 121 and the second conductive layer 122 deforming with the flexible substrate 11. In some embodiments, conductive particles may be filled in the flexible material content to form the first conductive layer 121 and the second conductive layer 122 capable of conducting electricity. The types and proportions of the conductive particles filled in the first conductive layer 121 and the second conductive layer 122 affect the conductivity of the first conductive layer 121 and the second conductive layer 122, and the following description is made for the materials of the first conductive layer 121, the second conductive layer 122 and the flexible substrate 11.

The placement of the second conductive layer 122 between the first conductive layer 121 and the flexible substrate 11 can be understood as: in the thickness direction, the first conductive layer 121 and the flexible substrate 11 have at least a part of structures on both sides of the second conductive layer 122, respectively. In this specification, the abutment of two members means that the two members are positioned adjacent to each other and electrically connected. The adjacent arrangement of the first conductive layer 121 and the second conductive layer 122 can be understood as: both the first electric field and the second conductive layer 122 are adjacently arranged in the thickness direction of the flexible substrate 11, and are electrically connected therebetween. By such arrangement, the first conductive layer 121 can serve as an electrode to draw out signals related to the second conductive layer 122 (e.g., signals related to the resistance of the second conductive layer 122, signals related to the capacitance and resistance of the second conductive layer 122).

In some embodiments, the conductivity of the first conductive layer 121 is greater than the conductivity of the second conductive layer 122. Conductivity is a parameter describing the ease of charge flow in a substance, and since the conductivity of the first conductive layer 121 is greater than that of the second conductive layer 122, the conductivity of the first conductive layer 121 is better. Therefore, the resistance of the first conductive layer 121 is smaller than that of the second conductive layer 122. In the present specification, the electrical resistance of a certain member means the electrical resistance between two surfaces of the member spaced apart in the thickness direction of the flexible substrate 11. The resistance of the first conductive layer 121 refers to the resistance between the two surfaces of the first conductive layer 121 spaced apart in the thickness direction of the flexible substrate 11, and the resistance of the second conductive layer 122 refers to the resistance between the two surfaces of the second conductive layer 122 spaced apart in the thickness direction of the flexible substrate 11. In some embodiments, the conductivity of the first conductive layer 121 may be more than 100 times the conductivity of the second conductive layer 122.

Fig. 2A is a schematic diagram of the principle of resistance change according to the sensor 1 shown in fig. 1A. As shown in fig. 2A, the principle that the resistance value RB1 of the second conductive layer 122 of the first sensing structure 12 varies with the deformation of the flexible substrate 11 is: the value of the resistance R of the second conductive layer 122 (the resistance value RB1 of the second conductive layer 122 of the first sensing structure 12) is r=ρ (d/S), where ρ represents the resistivity of the second conductive layer 122, S represents the area of the second conductive layer 122, and d represents the thickness of the second conductive layer 122. During bending deformation of the sensor 1, the resistivity ρ of the second conductive layer 122 is approximately unchanged from the thickness d, and the resistance RB1 of the second conductive layer 122 of the first sensing structure 12 is proportional to the area S of the second conductive layer 122. Taking the second conductive layer 122 as a rectangle for example, the initial area s=w×l of the second conductive layer 122 ₀ Where w represents the width of the second conductive layer 122, L ₀ Representing the initial length of the second conductive layer 122. In fig. 2A to 2C, the l direction is the longitudinal direction, and the width direction is the direction toward the outside of the paper. In the sensor1, the resistance of the second conductive layer 122 before bending is: rb1=ρ (d/w×l ₀ ). After the sensor 1 is bent, the length of the second conductive layer 122 is defined by L ₀ Change (e.g. increase) to L _B1 (the increase or decrease in the length of the second conductive layer 122 is determined based on the bending direction), L _B1 Is related to the bending angle alpha. Thus, after sensor 1 is bent, the resistance of second conductive layer 122 is: rb1=ρ (d/w×l _B1 )。

When the sensor 1 (flexible substrate 11) is bent and deformed, the physical shape of the second conductive layer 122 is changed, so that the resistance of the second conductive layer 122 is changed (see fig. 2A and related description for specific principles). For example, bending of the sensor 1 may cause a change in the area of the second conductive layer 122, thereby changing the resistance of the second conductive layer 122. By collecting the resistance or the parameter related to the resistance of the second conductive layer 122 and analyzing the change condition of the resistance or the parameter related to the resistance of the second conductive layer 122, the bending condition (such as bending angle and bending direction) of the sensor 1 can be sensed more accurately. In addition, since the first conductive layer 121 is adjacent to the second conductive layer 122, the first conductive layer 121 may serve as an electrode extraction signal to collect a parameter related to the resistance of the second conductive layer 122. The acquisition of the relevant parameters of the resistance of the second conductive layer 122 is very simple, which makes the sensor 1 also more convenient for detecting bending situations.

In some embodiments, the resistance between the two surfaces of the second conductive layer 122 spaced apart in the thickness direction of the flexible substrate 11 may be 0.8mΩ to 15gΩ. In some embodiments, the electrical resistance between the two surfaces of the second conductive layer 122 spaced apart in the thickness direction of the flexible substrate 11 ranges from 1mΩ to 10gΩ.

By setting the resistance range between the two surfaces of the second conductive layer 122 spaced along the thickness direction of the flexible substrate 11 to be 1mΩ to 10gΩ, the second conductive layer 122 can conduct electricity while the resistance is sufficiently large, so that the measurement of the resistance of the second conductive layer 122 and the analysis of the variation value of the resistance can be ensured, and the bending condition of the sensor 1 can be accurately reflected.

FIG. 1B is a schematic cross-sectional view of a sensor having two sensing structures according to some embodiments of the present description. In some embodiments, as shown in fig. 1B, the sensor 1 further comprises a second sensing structure 12'; the second sensing structure 12' includes a multilayer structure arranged on the other side surface in the thickness direction of the flexible substrate 11; the layers of the multi-layer structure of the second sensing structure 12' are stacked in the thickness direction of the flexible substrate 11. That is, the first sensing structure 12 and the second sensing structure 12' are located at both sides of the thickness direction of the flexible substrate 11, respectively.

In some embodiments, the multilayer structure of the second sensing structure 12' also includes a first conductive layer 121' and a second conductive layer 122', the first conductive layer 121' of the second sensing structure 12' and the second conductive layer 122' of the second sensing structure 12' being disposed adjacent; the conductivity of the first conductive layer 121 'of the second sensing structure 12' is greater than the conductivity of the second conductive layer 122 'of the second sensing structure 12', the second conductive layer 122 'of the second sensing structure 12' being located between the first conductive layer 121 'of the second sensing structure 12' and the flexible substrate 11; the resistance of the second conductive layer 122' of the second sensing structure 12' changes with the deformation of the flexible substrate 11 '. The second sensing structure 12' may be similar to the first sensing structure 12 in structure and operation, and please refer to the related description of the first sensing structure 12.

In some embodiments, the sensor 1 may be a structure symmetrical in the thickness direction of the flexible substrate 11, and the symmetry axis may be a broken line M in fig. 1B. That is, the first sensing structure 12 and the second sensing structure 12' contain the same components, and the structures, dimensions, etc. of the respective components contained therein are also the same.

In other embodiments, both the first sensing structure 12 and the second sensing structure 12' can detect the resistance or a parameter related to the resistance of the second conductive layer 122 (122 '), although the first sensing structure 12 and the second sensing structure 12' can differ. For example, the conductivity of the first conductive layer 121 of the first sensing structure 12 may be different from the conductivity of the first conductive layer 121 'of the second sensing structure 12'.

FIG. 2B shows the change in resistance of the sensor 1 according to FIG. 1BThe principle of the resistance change shown in fig. 2B is similar to that shown in fig. 2A, and the same descriptions are omitted. As shown in fig. 2B, the resistance value RB1 of the second conductive layer 122 of the first sensing structure 12 and the resistance value RB1' of the second conductive layer 122' of the second sensing structure 12' both conform to the formula described above: r=ρ (d/S), where ρ represents the resistivity of the second conductive layer 122, S represents the area of the second conductive layer 122, and d represents the thickness of the second conductive layer 122. Before the sensor 1 is bent, the resistance of the second conductive layer 122 of the first sensing structure 12 and the resistance of the second conductive layer 122 'of the second sensing structure 12' are: rb1=rb2=ρ (d/w×l) ₀ ) When the sensor 1 is bent at an angle α, the length of the second conductive layer 122 of the first sensing structure 12 changes to L _B1 ＝L ₀ +2α×g, the length of the second conductive layer 122 'of the second sensing structure 12' varies to L _B1 ’＝L ₀ -2α×g. Where g represents the thickness, L, between the first 121 or second 122 conductive layer and the symmetry axis M of the sensor 1 ₀ Representing the initial length of the second wire layer. In some embodiments, L at this point ₀ May be the length of the sensor 1 at the position of the symmetry axis M. Thus, after bending of the sensor 1, the resistance of the second conductive layer 122 of the first sensing structure 12 is:the resistance of the second conductive layer 122 'of the second sensing structure 12' is: />As can be seen from the above formulas (1) and (2), the resistance change trends of the two sensing structures are opposite, the resistance RB1 of the second resistive layer of the first sensing structure 12 is inversely related to the bending angle α, and the resistance RB1 'of the second resistive layer of the second sensing structure 12' is positively related to the bending angle α.

By providing two sensing structures (the first sensing structure 12 and the second sensing structure 12'), since the change tendencies of the two sensing structures are opposite, the total change amount of the resistance after data processing (e.g., differential processing) is increased, so that the sensing sensitivity of the sensor 1 can be increased.

In addition, fig. 2C is a schematic diagram showing the occurrence of wrinkles according to the sensor 1. As shown in fig. 2C, when the sensor folds (fig. 2C shows that the length direction l folds), that is, when a plurality of bends occur (the bending angles may include α1, α2, and α3), it is known through geometric integration that α1, α2, and α3 do not need to be considered any more, and only the angles between the head and the tail of the sensor need to be considered. That is, no matter how many times the middle is bent, L _B1 ＝L ₀ +2α.g and L _B1’ ＝L ₀ -2α×g remains true, where α is the bending angle, and α is the angle between the head and the tail of the sensor, indicating that the sensor 1 with the first sensing structure 12 and the second sensing structure 12' can effectively prevent the influence of wrinkles.

In addition, by providing two sensing structures, particularly, symmetrically providing the first sensing structure 12 and the second sensing structure 12' in the thickness direction of the flexible substrate 11, common mode interference can be effectively eliminated. By way of example only, in addition to bending deformations, the sensor 1 may undergo stretching and compression deformations, and when the sensor 1 is stretched or compressed as a whole, the first sensing structure 12 and the second sensing structure 12 'may stretch or compress synchronously, regarding stretching or compression of the first sensing structure 12 and the second sensing structure 12' as common mode disturbances, providing two sensing structures and differential processing the signals may expel such common mode disturbances, so that the sensor 1 is insensitive to stretching or compression deformations of itself, and is only sensitive to bending deformations of itself, which increases the accuracy of angular sensing of the sensor 1.

In some embodiments, parameters of the sensor 1 (e.g., parameters related to the resistance of the second conductive layer 122, parameters related to the capacitance and resistance of the other second conductive layer 127, etc., described below) may be read by the processing circuitry. The type of parameter specifically read by the processing circuit is related to the structure of the processing circuit, the connection relationship between the processing circuit and the sensor 1, the structure of the sensor 1, and so on, and please refer to the following description. In some embodiments, the processing circuit may include a signal output device that may output an electrical signal (e.g., a voltage signal) to the sensor 1 such that the processing circuit may correspond to reading the parameter fed back by the sensor 1. The processing circuit may be a voltage divider circuit, a bridge circuit, a charge-discharge circuit, or the like. In some embodiments, the signal output device may output a direct current signal to the sensor 1 (as in the embodiment shown in fig. 3). In other embodiments, the signal output device may output an alternating current signal to the sensor 1 (e.g., the embodiments shown in fig. 6A, 6B, 8A, 8B). For example only, the signal output device may include a voltage output device. The voltage output device may output a voltage (direct current voltage or alternating current voltage) to the sensor 1, and the processing circuit may correspondingly read the voltage fed back to the sensor 1 based on the voltage output by the processing circuit to the sensor 1. In some embodiments, the voltage output device may output a square wave, triangular wave, sinusoidal wave, pulsed wave, etc. signal to the sensor 1.

In some embodiments, the detection parameters of the first sensing structure 12 and the second sensing structure 12' are read by the processing circuit, respectively; wherein, the detection parameters include: the parameter related to the resistance of the second conductive layer 122 of the first sensing structure 12, the parameter related to the capacitance and resistance of the second conductive layer 122 of the first sensing structure 12, the parameter related to the resistance of the second conductive layer 122' of the second sensing structure 12', or the parameter related to the capacitance and resistance of the second conductive layer 122' of the first sensing structure 12. The detection parameters of the first sensing structure 12 and the detection parameters of the second sensing structure 12' are subjected to differential processing by a processing circuit, and deformation parameters of the flexible substrate 11 are determined based on the result of the differential processing. A related description of the specific parameters contained in the inspection parameters can be found below.

When the sensor 1 has two sensing structures (e.g. a first sensing structure 12 and a second sensing structure 12'), the two sensing structures are connected together by the flexible substrate 11, and external forces may act on both sensing structures at the same time. In some embodiments, the processing circuitry may differentially process the sensed parameters of the two sensing structures in the sensing unit to determine the bending condition (e.g., bending angle, bending direction) of the flexible substrate 11. The differential processing may be used to remove common mode signals that are common but not required between the sensed parameters of the sensing structures, thereby amplifying the difference between the sensed parameters of the two sensing structures. For example, the sensor 1 may be deformed in tension or compression as a whole due to non-bending, which is likely to affect the sensing result of the sensor 1 to the bending situation, thereby affecting the accuracy of the sensing bending deformation of the sensor 1. Since the deformation of the stretching or the compression acts on the two sensing structures at the same time, the change of the detection parameter caused by the deformation of the stretching or the compression can be used as a common mode signal between the detection parameters of the two sensing structures in the sensor 1. The processing circuit can conduct differential processing on detection parameters of two sensing structures in the sensing unit, so that the common mode signals are filtered, the differential mode signals are amplified, the influence of external factors on the sensing of the sensor 1 is reduced, and the accuracy of the sensing bending deformation of the sensor 1 is improved. In some embodiments, the processing circuitry may read the relevant signals (e.g., resistance-related parameters of the second conductive layer 122, capacitance and resistance-related parameters of the second conductive layer 122, etc., as described below) through a differential amplifier.

In some embodiments, the electrical conductivity of the flexible substrate 11 is greater than the electrical conductivity of the second conductive layer 122. The second conductive layer 122 is disposed adjacent to the flexible substrate 11. In some embodiments, the first conductive layer 121 and the flexible substrate 11 are respectively led out of the wire connection processing circuit to read the resistance related parameters of the second conductive layer 122. Since the first conductive layer 121 and the flexible substrate 11 are each disposed adjacent to the second conductive layer 122, the first conductive layer 121 and the flexible substrate 11 can be conveniently used as electrodes to respectively draw out parameters related to the resistance of the second conductive layer 122.

The placement of the second conductive layer 122 adjacent to the flexible substrate 11 can be understood as: both the flexible substrate 11 and the second conductive layer 122 are adjacently arranged in the thickness direction of the flexible substrate 11, and are electrically connected therebetween. Since the conductivity of the first conductive layer 121 and the conductivity of the flexible substrate 11 are both greater than the conductivity of the second conductive layer 122, when the conductivity of the flexible substrate 11 and the conductivity of the first conductive layer 121 are much greater than the conductivity of the second conductive layer 122 (e.g., the conductivity of the flexible substrate 11 and the conductivity of the first conductive layer 121 are both 100 times or more than the conductivity of the second conductive layer 122), the resistance of the first conductive layer 121 and the resistance of the flexible substrate 11 can be approximately ignored, and the resistance between the first conductive layer 121 and the flexible substrate 11 is approximately equal to the resistance between the two surfaces of the second conductive layer 122 spaced apart in the thickness direction of the flexible substrate 11.

In this embodiment, the flexible substrate 11 may be made by filling conductive particles inside a flexible material. By adjusting the type and proportion of the conductive particles filled in the flexible material, the flexible substrate 11 with different conductivities can be obtained. For further description of such a flexible substrate 11, please refer to the following description of the material of the flexible substrate 11.

The parameters of the second conductive layer 122 related to the resistance may include one or more of a voltage value, a current value, a resistance value, etc., which are parameters capable of reflecting a resistance change value of the second conductive layer 122 after the sensor 1 is bent. The resistance-related parameter of the second conductive layer 122 may be read out by a processing circuit (e.g., a voltage divider circuit, a bridge circuit, etc.). The first conductive layer 121 and the flexible substrate 11 are led out of the lead wire respectively to be connected with a processing circuit, when the sensor 1 is bent and deformed, parameters related to the resistance of the second conductive layer 122 are changed along with the parameters, and the processing circuit can read the parameters related to the resistance of the second conductive layer 122, so that the change value of the resistance of the second conductive layer 122 is detected. In some embodiments, the processing circuitry may read the voltage and current across the second conductive layer 122, determining the ratio of the voltage to the current across the second conductive layer 122 as the resistance of the second conductive layer 122. When the sensor 1 is bent, the processing circuit can read that the voltage and/or current across the second conductive layer 122 changes, and the determined resistance of the second conductive layer 122 also changes. In other embodiments, only the voltage value output by the sensor 1 may be detected, and the voltage value may be directly used as a parameter related to the resistance of the second conductive layer 122 to reflect the resistance change value of the second conductive layer 122.

By way of example only, the processing circuitry may connect the sensor 1 shown in fig. 1A in the following manner: a voltage output device of the processing circuit is connected to the sensor 1 to provide the sensor 1 with a dc voltage of voltage Vcc. The current detection device of the processing circuit may detect the current flowing through the second conductive layer 122 as a parameter related to the resistance of the second conductive layer 122, and by analyzing the current flowing through the second conductive layer 122 and its variation value, the variation of the resistance may be determined, thereby determining the bending angle of the sensor 1.

When the sensor 1 comprises the second sensing structure 12', the first conductive layer 121 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', and the flexible substrate 11 may all lead out of the wire connection processing circuit to read the capacitance and resistance related parameters of the first sensing structure 12 and the resistance related parameters of the second sensing structure 12'. By way of example only, the processing circuitry may connect the sensor 1 shown in fig. 1B in the following manner: one of the first conductive layer 121 of the first sensing structure 12 and the first conductive layer 121 'of the second sensing structure 12' is connected to a voltage output device of the processing circuit, and the other of the two may be grounded. GND in the drawings of the present specification indicates ground. The processing circuit supplies a dc voltage at Vcc to the sensor 1. The flexible substrate 11 may be connected to a voltage detection device of the processing circuit to detect the output voltage Vout of the second conductive layer 122. The equivalent circuit is shown in fig. 3, which is a voltage dividing circuit, and is obtained according to a voltage dividing formula:

Where Vout represents the output voltage of the first sensing structure 12; vcc represents a DC signal of magnitude Vcc; l (L) ₀ Representing the initial length of the second conductive layer 122; d represents the thickness between the second conductive layer 122 and the symmetry axis M of the sensor 1; alpha represents the bending angle of the sensor 1. The output voltage Vout serves as a parameter related to the resistance of the second conductive layer 122.

As can be seen from the above formula (3), the output voltage Vout is positively correlated with the bend angle α. That is, the larger the bending angle α, the larger the output voltage. By analyzing the output voltage and its variation, the bending of the sensor 1 can be determined. For example, the bending angle α of the sensor 1 can be obtained directly by measuring the output voltage Vout of the first sensing structure 12.

The first conductive layer 121 and the flexible substrate 11 are respectively led out of the lead connection processing circuit, and the processing circuit reads the parameter related to the resistance of the second conductive layer 122, and can determine the resistance change of the second conductive layer 122 according to the parameter related to the resistance, and the resistance change of the second conductive layer 122 can reflect the bending angle of the sensor 1, so that the bending deformation of the sensor 1 can be sensitively and accurately sensed by reading the parameter related to the resistance of the second conductive layer 122.

Fig. 4A is a schematic cross-sectional view of a sensor 1 according to further embodiments of the present description. In some embodiments, as shown in fig. 4A, the multilayer structure further includes a third conductive layer 123, and the first conductive layer 121, the second conductive layer 122, and the third conductive layer 123 are disposed adjacently in order in the thickness direction of the flexible substrate 11. The second conductive layer 122 and the third conductive layer 123 are each located between the first conductive layer 121 and the flexible substrate 11. The conductivity of the third conductive layer 123 is greater than the conductivity of the second conductive layer 122; the electrical conductivity of the flexible substrate 11 is less than or equal to the electrical conductivity of the second conductive layer 122. In some embodiments, the first conductive layer 121 and the third conductive layer 123 may each lead out of the wire connection processing circuit to read a parameter related to the resistance of the second conductive layer 122. Since the first conductive layer 121 and the third conductive layer 123 are adjacent to the second conductive layer 122, the parameters related to the resistance of the second conductive layer 122 can be conveniently read by leading out the leads through the first conductive layer 121 and the third conductive layer 123.

In this embodiment, the flexible substrate 11 may be provided to include an insulating flexible material or a high-resistance flexible material, and the resistivity of the flexible substrate 11 is greater than or equal to the resistivity of the second conductive layer 122. For a specific material of the flexible substrate 11, please refer to the following description.

The third conductive layer 123 may be similar to the first conductive layer 121, for materials, properties, etc. of the third conductive layer 123, please refer to the description above regarding the first conductive layer 121. Since the conductivity of the first conductive layer 121 and the conductivity of the third conductive layer 123 are both greater than the conductivity of the second conductive layer 122, when the conductivity of the third conductive layer 123 and the conductivity of the first conductive layer 121 are much greater than the conductivity of the second conductive layer 122 (e.g., the conductivity of the flexible substrate 11 and the conductivity of the first conductive layer 121 are 100 times or more than the conductivity of the second conductive layer 122), the resistance of the first conductive layer 121 and the resistance of the third conductive layer 123 can be approximately ignored, and then the resistance between the first conductive layer 121 and the flexible substrate 11 is approximately equal to the resistance between the two surfaces of the second conductive layer 122 spaced apart in the thickness direction of the flexible substrate 11.

The connection relationship between the processing circuit and the sensor 1 in the embodiment corresponding to fig. 4A is similar to the connection relationship between the processing circuit and the sensor 1 in the embodiment corresponding to fig. 1A, and the difference is that: in the embodiment corresponding to fig. 1A, the first conductive layer 121 and the flexible substrate 11 respectively draw out a wire connection processing circuit, and in the embodiment corresponding to fig. 4A, the first conductive layer 121 and the third conductive layer 123 respectively draw out a wire connection processing circuit. That is, the higher conductivity flexible substrate is replaced by the higher conductivity third conductive layer 123. Thus, in the embodiment corresponding to fig. 4A, the connection relationship between the processing circuit and the sensor 1 can be seen from the connection relationship between the processing circuit and the sensor 1 in the embodiment corresponding to fig. 1A.

Compared with the embodiment that the conductivity of the flexible substrate 11 is greater than that of the second conductive layer 122, in this embodiment, the third conductive layer 123 is provided, and the third conductive layer 123 and the first conductive layer 121 can be led out from the lead connection processing circuit respectively, so that the conductivity of the flexible substrate 11 is not required, and the flexible substrate 11 can be made of an insulating flexible material or a high-resistance flexible material with lower cost.

Fig. 4B is a schematic cross-sectional view of a sensor 1 having two sensing structures according to other embodiments of the present disclosure. As shown in fig. 4B, the second sensing structure 12 'also has a third conductive layer 123', and the third conductive layer 123 'of the second sensing structure 12' is similar to the third conductive layer 123 of the first sensing structure 12 in structure and performance, and please refer to the related description of the third conductive layer 123 of the first sensing structure 12. When the sensor 1 further comprises the second sensing structure 12', the first conductive layer 121 of the first sensing structure 12, the third conductive layer 123 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', and the third conductive layer 123' of the second sensing structure 12 'may conveniently be led out of the wire connection processing circuit, respectively, to read the parameter related to the resistance of the second conductive layer 122 of the first sensing structure 12 and the parameter related to the resistance of the second conductive layer 122 of the second sensing structure 12'.

The connection relationship between the processing circuit and the sensor 1 in the embodiment corresponding to fig. 4B is similar to the connection relationship between the processing circuit and the sensor 1 in the embodiment corresponding to fig. 1B, and the difference is that: in the embodiment corresponding to fig. 1B, the first conductive layer 121 and the flexible substrate 11 respectively draw out a wire connection processing circuit, and in the embodiment corresponding to fig. 4B, the first conductive layer 121 and the third conductive layer 123 respectively draw out a wire connection processing circuit. Thus, in the embodiment of fig. 4B, the connection relationship between the processing circuit and the sensor 1 can be seen in the corresponding embodiment of fig. 1B (i.e. fig. 3).

In some embodiments, the relative dielectric constant of the second conductive layer 122 is greater than 3. The relative permittivity is a physical parameter that characterizes the dielectric or polarization properties of a dielectric material, and its value is equal to the ratio of the capacitance of a capacitor of the same size made with the corresponding material as the medium and with vacuum as the medium. The value of the relative permittivity is also a representation of the storage capacity of the material, also known as the relative permittivity. The material with a relative dielectric constant greater than 3 is a polar material, that is, the second conductive layer 122 with a relative dielectric constant greater than 3 has a certain storage capacity. Thus, the second conductive layer 122 may be equivalently a parallel combination of resistive and capacitive elements.

In some embodiments, the relative dielectric constant of the second conductive layer 122 may also be 4 or more. Preferably, the relative dielectric constant of the second conductive layer 122 is greater than 5. In some embodiments, the relative dielectric constant of the second conductive layer 122 is greater than 10.

Setting the relative dielectric constant of the second conductive layer 122 to be greater than 3 may cause the second conductive layer 122 to be both a resistive element and a capacitive element. During bending of the sensor 1, the capacitance and resistance of the second conductive layer 122 will change along with the deformation of the flexible substrate 11, and thus, the parameters of the second conductive layer 122 related to the capacitance and resistance may reflect the bending of the sensor 1. In this embodiment, the capacitance and the resistance exist simultaneously to reflect the bending condition of the sensor 1, so that the sensitivity and the accuracy of the sensor 1 can be significantly improved.

In addition, by setting the resistance range between the two surfaces of the second conductive layer 122 spaced along the thickness direction of the flexible substrate 11 to be 1mΩ -10 gΩ, the second conductive layer 122 can be ensured to have better resistance performance, better capacitance performance, and the sensitivity and accuracy of the sensor.

In some embodiments, the electrical conductivity of the flexible substrate 11 is greater than the electrical conductivity of the second conductive layer 122, the second conductive layer 122 being disposed adjacent to the flexible substrate 11. In some embodiments, the first conductive layer 121 (e.g., the first conductive layer 121 of the first sensing structure 12) and the flexible substrate 11 are respectively led out of the wire connection processing circuit to read the parameters related to capacitance and resistance of the second conductive layer 122. The sensor 1 of the present embodiment is similar to the sensor 1 of the corresponding embodiment of fig. 1A, and only differs from the sensor 1 of the present embodiment in that the relative dielectric constant of the second conductive layer 122 is required to be greater than 3, and the parameters read by the processing circuit are different.

Since the second conductive layer 122 has a certain storage capacity, the second conductive layer 122 is both a resistive element and a capacitive element, and the processing circuit can read the parameters related to both capacitance and resistance of the second conductive layer 122. Since the conductivity of the first conductive layer 121 and the conductivity of the flexible substrate 11 are both greater than the conductivity of the second conductive layer 122, when the conductivity of the flexible substrate 11 and the conductivity of the first conductive layer 121 are substantially greater than the conductivity of the second conductive layer 122 (e.g., the conductivity of the flexible substrate 11 and the conductivity of the first conductive layer 121 are greater than 100 times the conductivity of the second conductive layer 122), then the second conductivity between the first conductive layer 121 and the flexible substrate 11 forms an equivalent resistance RB1. In addition, since the relative dielectric constant of the second conductive layer 122 is greater than 3, the second conductivity between the first conductive layer 121 and the flexible substrate 11The electrical layer 122 also has an equivalent capacitance CB1 in parallel with the equivalent resistance RB1, the sensor 1 constituting a complex impedance. The second conductive layer 122 is equivalent to a parallel plate capacitance. Capacitance of the second conductive layer 122Where S represents the area of the second conductive layer 122, d represents the thickness of the second conductive layer 122, ε _r Represents the equivalent dielectric constant, ε, of the second conductive layer 122 ₀ Indicating the vacuum dielectric constant. It can be seen that the capacitance CB1 of the second conductive layer 122 is proportional to the area S of the second conductive layer 122. In connection with the description of fig. 2A, the capacitance CB1 of the second conductive layer 122 is proportional to the length LB1 of the second conductive layer 122, and the capacitance CB1 of the second conductive layer 122 is positively correlated with the bending angle α of the sensor 1, that is, the capacitance CB1 oc S oc L oc of the second conductive layer 122.

The parameters of the second conductive layer 122 related to capacitance and resistance include one or more of a voltage value, a resistance value, a capacitance value, etc., which can reflect the parameters of the capacitance and resistance change value of the second conductive layer 122 after the sensor 1 is bent. The capacitance and resistance related parameters of the second conductive layer 122 may be read out by a processing circuit (e.g., a charge-discharge circuit). It should be noted that, when the parameter related to the capacitance and resistance of the second conductive layer 122 is read, the parameter may not be a constant value, but a variable value. This change value is based on a time change, and the time at which the processing circuit reads the parameter can be set. For example, the processing circuitry may be configured to read a parameter related to the capacitance resistance of the second conductive layer 122 at a plurality of points in time.

Since the capacitance and the resistance of the second conductive layer 122 will change when the sensor 1 is bent and deformed, the processing circuit reads the parameters related to the capacitance and the resistance of the second conductive layer 122, the change in the resistance and the change in the capacitance of the second conductive layer 122 can jointly reflect the bending angle of the sensor 1, and the bending deformation of the sensor 1 can be sensitively and accurately sensed by reading the parameters related to the capacitance and the resistance of the second conductive layer 122.

In some embodiments, when the sensor 1 comprises the second sensing structure 12', the firstThe first conductive layer 121 of one sensing structure 12, the first conductive layer 121' of the second sensing structure 12', and the flexible substrate 11 may all be led out of the lead connection processing circuit to read the parameters related to capacitance and resistance of the first sensing structure 12 and the parameters related to capacitance and resistance of the second sensing structure 12 '. At this time, the capacitance CB1' of the second conductive layer 122' of the second sensing structure 12' is calculated in the same manner as the capacitance CB1 of the second conductive layer 122 of the first sensing structure 12 (4), that isWhere S represents the area of the second conductive layer 122', d represents the thickness of the second conductive layer 122', ε _r Represents the equivalent dielectric constant, ε, of the second conductive layer 122 ₀ Indicating the vacuum dielectric constant. It can be seen that the capacitance CB1' of the second conductive layer 122' is proportional to the area S of the second conductive layer 122 '. In connection with the description of FIG. 2B, when the capacitance CB1 'of the second conductive layer 122' is positively correlated to the length LB1 'of the second conductive layer 122', the capacitance CB1 'of the second conductive layer 122' is negatively correlated to the bending angle α of the sensor 1.

Fig. 5A is a schematic cross-sectional view of a sensor 1 according to further embodiments of the present description. In some embodiments, as shown in fig. 5A, the multilayer structure further includes a fourth conductive layer 124, and the first conductive layer 121, the second conductive layer 122, and the fourth conductive layer 124 are disposed adjacently in order in the thickness direction of the flexible substrate 11. The second conductive layer 122 and the fourth conductive layer 124 are each located between the first conductive layer 121 and the flexible substrate 11. The conductivity of the flexible substrate 11 is less than or equal to the conductivity of the second conductive layer 122; the conductivity of the fourth conductive layer 124 is greater than the conductivity of the second conductive layer 122. In some embodiments, the first conductive layer 121 and the fourth conductive layer 124 each lead out of the wire connection processing circuit to read parameters related to capacitance and resistance of the second conductive layer 122. It should be noted that the fourth conductive layer 124 and the third conductive layer 123 may be replaced equivalently.

The fourth conductive layer 124 has a similar structure, performance, etc. to the third conductive layer 123 described above, and reference is made to the description of the third conductive layer 123. The sensor 1 of the embodiment corresponding to fig. 5A is similar to the sensor 1 of the embodiment corresponding to fig. 4A, except that the relative dielectric constant of the second conductive layer 122 is required to be greater than 3 in the embodiment corresponding to fig. 5A, and the parameters read by the processing circuit are different.

Since the conductivity of the first conductive layer 121 and the conductivity of the fourth conductive layer 124 are both greater than the conductivity of the second conductive layer 122, when the conductivity of the first conductive layer 121 and the conductivity of the fourth conductive layer 124 are much greater than the conductivity of the second conductive layer 122 (e.g., the resistivity of the first conductive layer 121 and the conductivity of the fourth conductive layer 124 are 100 times or more than the conductivity of the second conductive layer 122), the second conductivity between the first conductive layer 121 and the fourth conductive layer 124 forms an equivalent resistance RB1. In addition, since the relative dielectric constant of the second conductive layer 122 is greater than 3, the second conductive formation between the first conductive layer 121 and the fourth conductive layer 124 also forms an equivalent capacitance CB1 in parallel with the equivalent resistance RB1, and the sensor 1 constitutes a complex impedance.

Compared with the embodiment that the conductivity of the flexible substrate 11 is greater than that of the second conductive layer 122, the present embodiment leads out the lead connection processing circuit through the fourth conductive layer 124 and the first conductive layer 121 respectively, so that the conductivity of the flexible substrate 11 is not required, and the flexible substrate 11 can be made of an insulating flexible material or a high-resistance flexible material.

By way of example only, the processing circuitry may connect the sensor 1 shown in fig. 5A in the following manner: the voltage output device of the processing circuit is connected to the fourth conductive layer 124 through a constant resistor having a resistance value R0 to provide the second conductive layer 122 with the pulse ac voltage Vi having the peak voltage Vcc. The first conductive layer 121 is grounded, and the fourth conductive layer 124 may be connected to a voltage detection device to detect the output voltage Vout of the first sensing structure 12. The equivalent circuit is shown in fig. 6A. By such arrangement, the processing circuit is a charge-discharge circuit, and when each pulse signal is input, a charge-discharge signal is given to the second conductive layer 122, and the charge-discharge process is modulated by the resistance RB1 and the equivalent capacitance CB1 of the second conductive layer 122.

When the incoming Vi signal is a square wave pulse with a peak value of Vcc,

/>

Where Vout represents the output voltage of the first sensing structure 12; vcc represents the peak value of the square wave pulse electric signal Vi as Vcc; r0 represents the resistance value of the constant value resistor; RB1 denotes a resistance value of the second conductive layer 122; CB1 represents a capacitance value of the second conductive layer 122; t represents the measurement time. The magnitude of the output voltage of the first sensing structure 12 is related to both the capacitance CB1 of the second conductive layer 122 and the resistance RB1 of the first conductive layer 121. As known from the above equation (1) for the resistance RB1 of the second conductive layer 122, the resistance RB1 of the second conductive layer 122 of the first sensing structure 12 is inversely related to the bending angle α; as can be seen from the above equation (4) of the capacitance CB1 of the second conductive layer 122, the capacitance CB1 of the second resistive layer of the first sensing structure 12 is positively correlated with the bending angle α. As can be seen from the above formula (6), the resistance RB1 of the second conductive layer 122 of the first sensing structure 12 is positively correlated with the output voltage Vout of the first sensing structure 12, and the capacitance CB1 of the second conductive layer 122 of the first sensing structure 12 is negatively correlated with the output voltage Vout of the first sensing structure 12, so that the output voltage Vout of the first sensing structure 12 is negatively correlated with the bending angle α, and the bending condition (e.g., bending angle, bending direction) of the sensor 1 can be obtained by measuring and analyzing the output voltage Vout of the first sensing structure 12.

The processing circuit reads the parameters related to the capacitance and the resistance of the second conductive layer 122, and the parameters are modulated by the resistance RB1 of the second conductive layer 122 and the capacitance CB1 of the second conductive layer 122, so that the processing circuit can sensitively and accurately sense the bending deformation of the sensor 1 by reading the parameters related to the capacitance and the resistance. In addition, by grounding the first conductive layer 121, it is possible to function as an electrical shielding layer, and to shield the sensor 1 from the influence of an interference source such as a human body, and to improve the stability of the sensor 1.

Fig. 5B is a schematic cross-sectional view of a sensor 1 having two sensing structures according to other embodiments of the present disclosure. As shown in fig. 5B, the second sensing structure 12' also has a fourth conductive layer 124', and the fourth conductive layer 124' of the second sensing structure 12' is similar to the fourth conductive layer 124 of the first sensing structure 12 in structure and performance, and has a description referring to the fourth conductive layer 124' of the first sensing structure 12. When the sensor 1 further comprises the second sensing structure 12', the first conductive layer 121 of the first sensing structure 12, the fourth conductive layer 124 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', the fourth conductive layer 124' of the second sensing structure 12' may conveniently be led out of the wire connection processing circuit, respectively, to read the parameter related to the resistance of the second conductive layer 122 of the first sensing structure 12 and the parameter related to the resistance of the second conductive layer 122' of the second sensing structure 12 '.

By way of example only, the processing circuitry may connect the sensor 1 shown in fig. 5B in the following manner: the voltage output device of the processing circuit is connected to the second conductive layer 122 of the first sensing structure 12 through a constant resistor having a resistance value R0, and the voltage output device of the processing circuit is connected to the second conductive layer 122' of the second sensing structure 12' through a constant resistor having a resistance value R0', so as to provide the pulse ac voltage Vi having a peak voltage Vcc to the second conductive layer 122 of the first sensing structure 12 and the second conductive layer 122' of the second sensing structure 12 '. The first conductive layer 121 of the first sensing structure 12 is grounded, and the first conductive layer 121 'of the second sensing structure 12' is grounded. The fourth conductive layer 124 of the first sensing structure 12 and the fourth conductive layer 124 'of the second sensing structure 12' may each be connected to a voltage detection device for detecting the output voltage Vout of the first sensing structure 12 and the output voltage Vout 'of the second sensing structure 12'. The equivalent circuit is shown in fig. 6B. Since the structure of the sensor 1 in the embodiment corresponding to fig. 5B is only a second sensing structure 12' similar to the first sensing structure 12 added to the structure of the sensor 1 in the embodiment corresponding to fig. 5A, the equivalent circuit of fig. 6B is similar to the operation principle of the equivalent circuit in fig. 6A. When the incoming Vi signal is a square wave pulse with a peak value of Vcc,

Where Vout 'represents the output voltage of the second sensing structure 12'; vcc represents the peak value of the square wave pulse electric signal Vi as Vcc; r0' represents the resistance value of the constant value resistor; RB1' represents the resistance value of the second conductive layer 122' of the second sensing structure 12 '; CB1' represents the capacitance value of the second conductive layer 122' of the second sensing structure 12 '; t represents the measurement time. The magnitude of the output voltage of the second sensing structure 12' is related to the capacitance CB1' of the second conductive layer 122 and the resistance RB1' of the first conductive layer 121. As can be seen from equation (2) above for the resistance RB1 'of the second conductive layer 122, the resistance RB1' of the second conductive layer 122 'of the second sensing structure 12' is inversely related to the bending angle α; as can be seen from the above calculation formula (7) of the capacitance CB1 'of the second sensing structure 12', the capacitance CB1 'of the second resistive layer of the second sensing structure 12' is positively correlated with the bending angle α. As can be seen from the above formula (7), the resistance RB1' of the second conductive layer 122' of the second sensing structure 12' is positively correlated with the output voltage Vout ' of the second sensing structure 12', and the capacitance CB1' of the second conductive layer 122' of the second sensing structure 12' is negatively correlated with the output voltage Vout ' of the sensor 1, so that the output voltage Vout ' of the second sensing structure 12' is positively correlated with the bending angle α, and the bending condition (e.g. bending angle, bending direction) of the sensor 1 can be obtained by measuring and analyzing the output voltage Vout ' of the second sensing structure 12 '.

Fig. 7A is a schematic cross-sectional view of a sensor 1 according to further embodiments of the present description. In some embodiments, as shown in fig. 7A, the multilayer structure further includes another first conductive layer 126 and another second conductive layer 127; the conductivity of the flexible substrate 11, the conductivity of the first conductive layer 121 and the conductivity of the further first conductive layer 126 are all greater than the conductivity of the second conductive layer 122, and the conductivity of the flexible substrate 11, the conductivity of the first conductive layer 121 and the further first conductive layer 126 are all greater than the conductivity of the further second conductive layer 127. The first conductive layer 121, the second conductive layer 122, the other first conductive layer 126, and the other second conductive layer 127 are disposed adjacently in order in the thickness direction of the flexible substrate 11; another second conductive layer 127 is arranged adjacent to the flexible substrate 11. In some embodiments, the first conductive layer 121, the further first conductive layer 126 and the flexible substrate 11 respectively lead out of the wire connection processing circuit to read the capacitance and resistance related parameters of the second conductive layer 122 and the further second conductive layer 127. The first conductive layer 121 and the further first conductive layer 126 may conveniently serve as electrodes for extracting signals related to the capacitance and resistance of the second conductive layer 122, and the further first conductive layer 126 and the flexible substrate 11 may conveniently serve as electrodes for extracting signals related to the capacitance and resistance of the further second conductive layer 127.

In this embodiment, the flexible substrate 11 may include a flexible material filled with conductive particles. For a specific material of the flexible substrate 11, please refer to the following description.

The sequentially adjacent arrangement of the first conductive layer 121, the second conductive layer 122, the other first conductive layer 126, and the other second conductive layer 127 in the thickness direction of the flexible substrate 11 can be understood as: one side surface of the second conductive layer 122 is adjacent to the first conductive layer 121, the other side surface of the second conductive layer 122 is adjacent to the other first conductive layer 126, one side surface of the other second conductive layer 127 is adjacent to the other first conductive layer 126, and the other side surface of the other second conductive layer 127 is adjacent to the flexible substrate 11. Since the conductivities of the first conductive layer 121, the other first conductive layer 126, and the flexible substrate 11 are all greater than the conductivities of the second conductive layer 122 and the other second conductive layer 127, when the conductivities of the first conductive layer 121, the other first conductive layer 126, and the flexible substrate 11 are far greater than the conductivities of the second conductive layer 122 and the other second conductive layer 127 (for example, the conductivities of the first conductive layer 121, the other first conductive layer 126, and the flexible substrate 11 are all greater than 100 times the conductivities of the second conductive layer 122 and the other second conductive layer 127, respectively), the resistances of the first conductive layer 121, the other first conductive layer 126, and the flexible substrate 11 can be approximately ignored, so that a d equivalent parallel resistance RB1// RB2 is formed between the first conductive layer 121 and the flexible substrate 11. In addition, since the relative dielectric constants of the second conductive layer 122 and the other second conductive layer 127 are greater than 3, an equivalent shunt capacitance CB1// CB2 parallel to the equivalent shunt resistance RB1 is also formed between the first conductive layer 121 and the flexible substrate 11.

By such an arrangement, the second conductive layer 122 and the further second conductive layer 127 can be equivalent to two parallel capacitances, which increases the total capacitance of the sensor 1 compared to the solution in which the processing circuit reads the capacitance and resistance related parameters of the second conductive layer 122 of the sensor 1 of the corresponding embodiment of fig. 1A. Due to the increase of the total capacitance, both the accuracy and sensitivity of the sensor 1 can be improved.

In some embodiments, the first conductive layer 121 and the flexible substrate 11 are grounded; the other first conductive layer 126 is connected to a voltage output device of the processing circuit through a fixed resistor to supply the second conductive layer 122 and the other second conductive layer 127 with a pulse alternating voltage Vi having a peak voltage Vcc. The first conductive layer 121, the other first conductive layer 126 and the flexible substrate 11 respectively lead out a wire connection processing circuit to read the parameters related to capacitance and resistance of the second conductive layer 122 and the other second conductive layer 127. For example only, the fourth conductive layer 124 may be connected to a voltage detection device to detect the output voltage Vout of the sensor 1. The equivalent circuit is shown in fig. 8A.

In addition, in the present embodiment, the grounding of the flexible substrate 11 may completely shield the two sensing structures (the first sensing structure 12 and the second sensing structure 12'), so as to reduce mutual interference between the two sensing structures due to coupling capacitance, and improve the reliability of the sensor 1.

Fig. 7B is a schematic cross-sectional view of a sensor 1 having two sensing structures according to further embodiments of the present description. As shown in fig. 7B, the second sensing structure 12' also has another first conductive layer 126' and another second conductive layer 127', the another first conductive layer 126' of the second sensing structure 12' is similar to the another first conductive layer 126 of the first sensing structure 12 in structure and performance, and the another second conductive layer 127' of the second sensing structure 12' is similar to the another second conductive layer 127 of the first sensing structure 12 in structure and performance, please refer to the related description of the another first conductive layer 126 and the another second conductive layer 127 of the first sensing structure 12. When the sensor 1 further comprises the second sensing structure 12', the first conductive layer 121 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', and the flexible substrate 11 may conveniently be led out of the wire connection processing circuit, respectively, to read the capacitance and resistance related parameters of the second conductive layer 122 of the first sensing structure 12, and the capacitance and resistance related parameters of the second conductive layer 122' of the second sensing structure 12 '.

In some embodiments, the first conductive layer 121 of the first sensing structure 12, the first conductive layer 121 'of the second sensing structure 12', and the flexible substrate 11 are all grounded; the further first conductive layer 126 of the first sensing structure 12 and the further first conductive layer 126' of the second sensing structure 12' are connected to the voltage output device of the processing circuit by means of a fixed resistor to provide the second conductive layer 122 and the further second conductive layer 127 of the first sensing structure 12 and the second conductive layer 122' and the further second conductive layer 127' of the second sensing structure 12' with a pulsed alternating voltage Vi having a voltage of peak voltage Vcc. The first conductive layer 121 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', and the flexible substrate 11 respectively lead out a wire connection processing circuit to read the parameters related to capacitance and resistance of the second conductive layer 122 of the first sensing structure 12 and the other second conductive layer 127, and the parameters related to capacitance and resistance of the second conductive layer 122' of the second sensing structure 12' and the other second conductive layer 127 '. For example only, the further first conductive layer 126 of the first sensing structure 12 and the further first conductive layer 126 of the second sensing structure 12' may be connected to a voltage detection device for detecting the output voltage Vout of the first sensing structure 12 and the output voltage Vout ' of the second sensing structure 12 '. The equivalent circuit is shown in fig. 8B.

FIG. 9A is a schematic cross-sectional view of a sensor 1 according to other embodiments of the present disclosure; in some embodiments, as shown in fig. 9A, the multilayer structure further includes another first conductive layer 126, another second conductive layer 127, and a fifth conductive layer 125; the first conductive layer 121, the second conductive layer 122, the other first conductive layer 126, the other second conductive layer 127, and the fifth conductive layer 125 are disposed adjacently in order in the thickness direction of the flexible substrate 11; the electrical conductivity of the flexible substrate 11 is less than or equal to the electrical conductivity of the second conductive layer 122, and the electrical conductivity of the flexible substrate 11 is less than or equal to the electrical conductivity of the other second conductive layer 127. The conductivity of the first conductive layer 121, the conductivity of the fifth conductive layer 125, and the conductivity of the further first conductive layer 126 are all greater than the conductivity of the second conductive layer 122, and the conductivity of the fifth conductive layer 125, the conductivity of the first conductive layer 121, and the conductivity of the further first conductive layer 126 are all greater than the conductivity of the further second conductive layer 127.

The sequential adjacent arrangement of the first conductive layer 121, the second conductive layer 122, the other first conductive layer 126, the other second conductive layer 127, and the fifth conductive layer 125 in the thickness direction of the flexible substrate 11 may be understood as that one side surface of the second conductive layer 122 is adjacent to the first conductive layer 121, the other side surface of the second conductive layer 122 is adjacent to the other first conductive layer 126, one side surface of the other second conductive layer 127 is adjacent to the other first conductive layer 126, and the other side surface of the other second conductive layer 127 is adjacent to the fifth conductive layer 125. Since the conductivities of the first conductive layer 121, the other first conductive layer 126, and the fifth conductive layer 125 are all greater than the conductivities of the second conductive layer 122 and the other second conductive layer 127, when the conductivities of the first conductive layer 121, the other first conductive layer 126, and the fifth conductive layer 125 are far greater than the conductivities of the second conductive layer 122 and the other second conductive layer 127 (for example, the conductivities of the first conductive layer 121, the other first conductive layer 126, and the fifth conductive layer 125 are all greater than 100 times the conductivities of the second conductive layer 122 and the other second conductive layer 127, respectively), the resistances of the first conductive layer 121, the other first conductive layer 126, and the fifth conductive layer 125 can be approximately ignored, and an equivalent parallel resistance RB1// RB2 is formed between the first conductive layer 121 and the fifth conductive layer 125. In addition, since the relative dielectric constants of the second conductive layer 122 and the other second conductive layer 127 are greater than 3, an equivalent shunt capacitance CB1// CB2 is formed between the first conductive layer 121 and the flexible substrate 11 in parallel with the equivalent shunt resistance RB 1.

The fifth conductive layer 125 may be similar to the first conductive layer 121 (or the third conductive layer 123, the fourth conductive layer 124 above), for materials, properties, etc. of the fifth conductive layer 125, please refer to the description above for the first conductive layer 121 (or the third conductive layer 123, the fourth conductive layer 124 above).

By such an arrangement, the second conductive layer 122 and the further second conductive layer 127 can be equivalent to two parallel capacitances, which increases the total capacitance of the sensor 1 compared to the solution in which the processing circuit reads the capacitance and resistance related parameters of the second conductive layer 122 of the sensor 1 of the corresponding embodiment of fig. 5A. Due to the increase of the total capacitance, both the accuracy and sensitivity of the sensor 1 can be improved. In addition, compared to the embodiment that the conductivity of the flexible substrate 11 is greater than the conductivity of the second conductive layer 122 and the conductivity of the other second conductive layer 127, the present embodiment leads out the wire connection processing circuit by providing the fifth conductive layer 125 and the first conductive layer 121, respectively, and the conductivity of the flexible substrate 11 is not required, and the flexible substrate 11 may be made of an insulating flexible material or a high-resistance flexible material.

In some embodiments, the first conductive layer 121 and the fifth conductive layer 125 are grounded, and a lead from the other first conductive layer 126 is connected to a voltage output device of the processing circuit through a fixed resistor. In some embodiments, the first conductive layer 121, the further first conductive layer 126 and the fifth conductive layer 125 respectively lead out of the wire connection processing circuit to read the capacitance and resistance related parameters of the second conductive layer 122 and the further second conductive layer 127. In the embodiment corresponding to fig. 9A, the connection relation of the processing circuit and the sensor 1 is similar to that in the embodiment corresponding to fig. 7A, except that: in the embodiment corresponding to fig. 7A, the first conductive layer 121, the other first conductive layer 126 and the flexible substrate 11 respectively lead out the wire connection processing circuit, and in the present embodiment, the first conductive layer 121, the other first conductive layer 126 and the fifth conductive layer 125 respectively lead out the wire connection processing circuit. That is, the higher conductivity flexible substrate 11 is replaced by the higher conductivity fifth conductive layer 125. Therefore, the connection relationship between the processing circuit and the sensor 1 in the embodiment corresponding to fig. 9A can be seen from the connection relationship between the processing circuit and the sensor 1 in the embodiment corresponding to fig. 7A.

FIG. 9B is a schematic cross-sectional view of a sensor having two sensing structures according to other embodiments of the present disclosure. In some embodiments, as shown in fig. 9B, when the sensor 1 includes the second sensing structure 12', the second sensing structure 12' also has another first conductive layer 126', another second conductive layer 127', and a fifth conductive layer 125', the another first conductive layer 126' of the second sensing structure 12' is similar to the structure and performance of the another first conductive layer 126 of the first sensing structure 12, the another second conductive layer 127' of the second sensing structure 12' is similar to the structure and performance of the another second conductive layer 127 of the first sensing structure 12, and the fifth conductive layer 125' of the second sensing structure 12' is similar to the structure and performance of the fifth conductive layer 125 of the first sensing structure 12, please refer to the related description of the first sensing structure 12. When the sensor 1 further comprises the second sensing structure 12', the first conductive layer 121 of the first sensing structure 12, the further first conductive layer 126 of the first sensing structure 12, the fifth conductive layer 125 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', the further first conductive layer 126' of the second sensing structure 12', the fifth conductive layer 125' of the second sensing structure 12' may conveniently be led out of the wire connection processing circuit, respectively, for reading the capacitance and resistance related parameters of the second conductive layer 122 of the first sensing structure 12, and the capacitance and resistance related parameters of the second conductive layer 122' of the second sensing structure 12 '.

In some embodiments, the first conductive layer 121 of the first sensing structure 12, the first conductive layer 121 of the second sensing structure 12', the fifth conductive layer 125 of the first sensing structure 12, and the fifth conductive layer 125 of the second sensing structure 12' are all grounded; the further first conductive layer 126 of the first sensing structure 12 and the further first conductive layer 126 of the second sensing structure 12' are connected to the voltage output device of the processing circuit by means of respective fixed resistors to provide the second conductive layer 122 and the further second conductive layer 127 with a pulsed ac voltage Vi at a peak voltage Vcc. The first conductive layer 121 of the first sensing structure 12, the further first conductive layer 126 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', the further first conductive layer 126' of the second sensing structure 12', the fifth conductive layer 125 of the first sensing structure 12, the fifth conductive layer 125' of the second sensing structure 12' respectively lead out a wire connection processing circuit to read capacitance and resistance related parameters of the second conductive layer 122 of the first sensing structure 12 and the further second conductive layer 127, and capacitance and resistance related parameters of the second conductive layer 122' of the second sensing structure 12' and the further second conductive layer 127 '. For example only, the further first conductive layer 126 of the first sensing structure 12 and the further first conductive layer 126 'of the second sensing structure 12' may be connected to a voltage detection device for detecting the output voltage Vout of the first sensing structure 12 and the output voltage Vout 'of the second sensing structure 12'.

In some embodiments, a voltage output device of the processing circuit outputs a pulsed voltage. The capacitance and resistance related parameters include voltage values at a plurality of time points. The voltage values at the plurality of time points are voltage values read at a plurality of different time points by the voltage detection device of the processing circuit based on the pulse voltage output to the sensor 1 by the voltage output device of the processing circuit. By bringing the time of reading the voltage value into the above formula (6) or (7), the output voltage Vout of the first sensing structure 12 or the output voltage Vout 'of the second sensing structure 12' at the corresponding point in time can be determined.

In some embodiments, the saturation voltage amplitude on the second conductive layer 122 is less than the amplitude of the pulse voltage. The saturation voltage magnitude may refer to a voltage value that can be reached by the second conductive layer 122 after the second conductive layer 122 is charged (due to the capacitive properties of the second conductive layer 122) for a sufficient time. In embodiments in which the processing circuit reads the capacitance and resistance related parameters of the second conductive layer 122, since the second conductive layer 122 may be equivalently a parallel connection of resistive and capacitive elements, the resistance of the second conductive layer 122 cannot be considered infinite, which affects the output voltage Vout of the first sensing structure 12 and the output voltage Vout 'of the second sensing structure 12', such that the saturated voltage amplitude across the second conductive layer 122 is less than the amplitude of the pulse voltage.

In some embodiments, the saturation voltage amplitude of the second conductive layer 122 of the first sensing structure 12 is not equal to the saturation voltage amplitude of the second conductive layer 122 'of the second sensing structure 12'. In some embodiments, the second conductive layer 122 of the first sensing structure 12 and the second conductive layer 122 'of the second sensing structure 12' change differently when the sensor 1 is bent. For example, when the sensor 1 is bent toward the side where the second sensing structure 12' is located, the area of the second conductive layer 122 of the first sensing structure 12 increases, and the resistance becomes small; the area of the second conductive layer 122 'of the second sensing structure 12' decreases and the resistance increases, which results in a saturation voltage amplitude of the second conductive layer 122 of the first sensing structure 12 being unequal to a saturation voltage amplitude of the second conductive layer 122 'of the second sensing structure 12'.

For illustration purposes only, in the solution (i.e., complex impedance solution) in which the capacitive-resistive related parameter of the second conductive layer 122 is read by the processing circuit under square wave excitation, the curve of the output voltage of the first sensing structure 12 is shown as curve Vout (0) in fig. 10, and the curve of the output voltage of the second sensing structure 12 'is shown as curve Vout' (0) in fig. 10. In comparison, in the solution of reading, by the processing circuit, the relevant parameters of the second conductive layer having only capacitive properties but not resistive properties under square wave excitation, the curve of the output voltage of the first sensing structure is shown as the curve Vout (1) in fig. 10, and the curve of the output voltage of the second sensing structure is shown as Vout' (1). In addition, fig. 10 is a graph with time as an abscissa and voltage as an ordinate, where Vi represents the amplitude of the square wave.

As can be seen from fig. 10, in the technical scheme that the processing circuit reads the parameters related to the capacitance and resistance of the second conductive layer 122 after the charging time is long enough to allow the output to reach the saturated voltage amplitude, the relationship among the saturated value of the output voltage of the first sensing structure 12, the saturated value of the output voltage of the second sensing structure 12' and the amplitude of the square wave is: vout (0) noteq.vout '(0), and Vout (0)) < Vi, vout' (0) < Vi; in the technical scheme that the processing circuit reads the parameters of the second conductive layer with only capacitive performance but not resistive performance, the relationship among the saturation value of the output voltage of the first sensing structure 12, the saturation value of the output voltage of the second sensing structure 12' and the amplitude of the square wave is: vout (1) =vout' (1) =vi. It can be seen that in both embodiments, the output voltage of the first sensing structure 12 and the output voltage of the second sensing structure 12' are different.

Fig. 11A-11C are schematic cross-sectional views of a sensor 1 including a third sensing structure 13 and a fourth sensing structure 13' according to some embodiments of the present description. In some embodiments, as shown in fig. 11A-11C, the sensor 1 further includes a third sensing structure 13 and a fourth sensing structure 13', the third sensing structure 13 includes a multi-layer structure disposed on one side surface in the width direction of the flexible substrate 11, the fourth sensing structure 13' includes a multi-layer structure disposed on the other side surface in the width direction of the flexible substrate 11, each layer of the multi-layer structure of the third sensing structure 13 is stacked in the width direction of the flexible substrate 11, and each layer of the multi-layer structure of the fourth sensing structure 13' is stacked in the width direction of the flexible substrate 11. That is, the third sensing structures 13 and the fourth sensing structures 13' are located at both sides of the flexible substrate 11 in the width direction, respectively. The width direction of the flexible substrate 11 may be the w direction in the drawings (e.g., fig. 11A to 11C).

In some embodiments, the third sensing structure 13 may be similar in structure to the fourth sensing structure 13'. The multilayer structure of the third sensing structure 13 and the fourth sensing structure 13' each comprises a sixth conductive layer and a seventh conductive layer, which are arranged adjacently; the conductivity of the sixth conductive layer is greater than the conductivity of the seventh conductive layer, the seventh conductive layer being located between the sixth conductive layer and the flexible substrate 11; the resistance of the seventh conductive layer varies with the deformation of the flexible substrate 11. The sixth conductive layer is similar to the first conductive layer 121, and the seventh conductive layer is similar to the second conductive layer 122, and a detailed description can be found above.

The third sensing structure 13 and the fourth sensing structure 13' are sensing structures of the sensor 1 for measuring bending deformation in the width direction (w direction). The third sensing structure 13 and the fourth sensing structure 13' may comprise a multi-layer structure as in any of the embodiments described above. In the present embodiment, the width direction and the thickness direction can be understood in a broad sense. The width direction may refer to a direction different (not parallel) from the thickness direction. For example, an angle of 40 ° may be formed between the width direction and the thickness direction; for another example, an angle of 75 ° may be formed between the width direction and the thickness direction. Also for example, the width direction may be perpendicular to the thickness direction.

In some embodiments, the sensor 1 may be a structure symmetrical in the width direction of the flexible substrate 11, and the symmetry axis may be a broken line N in fig. 11A. That is, the third sensing structure 13 and the fourth sensing structure 13' contain the same components, and the structures and the sizes of the respective components contained in the two are also the same.

By providing four sensing structures (first sensing structure 12, second sensing structure 12', third sensing structure 13') the sensor 1 can be a sensor that is sensitive to deformations (e.g. bending deformations) in different directions (width and thickness directions). That is, the arrangement of the first sensing structure 12 and the second sensing structure 12 'may make the sensor 1 sensitive to bending in the thickness direction, while the arrangement of the third sensing structure 13 and the fourth sensing structure 13' may make the sensor 1 sensitive to bending in the width direction. When the width direction is perpendicular to the thickness direction, the sensor 1 can sense bending deformation in two directions perpendicular to each other.

In some embodiments, the ratio of the thickness to the width of the flexible substrate 11 ranges from: 0.2 to 5. In some embodiments, the ratio of the thickness to the width of the flexible substrate 11 ranges from: 0.3 to 3. In some embodiments, by setting the ratio of the thickness to the width of the flexible substrate 11 to be 0.3-3, it is ensured that both the bending in the thickness direction and the bending in the width direction of the sensor 1 can be accurately and sensitively sensed when the sensor 1 is bent and deformed.

In some embodiments, the first conductive layer 121, the second conductive layer 122, and the flexible substrate 11 each comprise an elastic material. The elastic material may allow the first conductive layer 121, the second conductive layer 122, and the flexible substrate 11 to return to the original shape when the applied external force is removed. In some embodiments, other conductive layers in the sensor 1 (e.g., the third conductive layer 123, the fourth conductive layer 124, the fifth conductive layer 125, the further first conductive layer 126, and/or the further second conductive layer 127, etc.) comprise an elastic material. In some embodiments, the elastic material includes silicone rubber, polydimethylsiloxane (PDMS), polyurethane, styrene-Butadiene-Styrene (SBS), and the like.

In some embodiments, the elastic material of the first conductive layer 121 and the elastic material of the second conductive layer 122 are filled with conductive particles; the density of the conductive particles filled in the elastic material of the first conductive layer 121 is greater than the density of the conductive particles filled in the elastic material of the second conductive layer 122. By adjusting the density of the filled conductive particles within the elastomeric material, the conductivity of the conductive layer can be adjusted. In some embodiments, the conductive particles include carbon nanotubes, silver nanowires, carbon black, graphite powder, graphene, and the like. By providing the density of the conductive particles filled in the elastic material of the first conductive layer 121 to be greater than the density of the conductive particles filled in the elastic material of the second conductive layer 122, the conductivity of the first conductive layer 121 can be made greater than the second conductive layer 122.

In some embodiments, the elastic material of the other conductive layers (e.g., the third conductive layer 123, the fourth conductive layer 124, the fifth conductive layer 125, the further first conductive layer 126, and/or the further second conductive layer 127, etc.) in the sensor 1 are each filled with conductive particles. In addition, the density of the conductive particles can be adjusted by corresponding to the conductivity requirements required for the conductive layer.

In some embodiments, when other conductive structures are disposed between the second conductive layer 122 and the flexible substrate 11, the flexible substrate 11 is preferably made of an insulating material. Other conductive structures are, for example, the third conductive layer 123, the fourth conductive layer 124, the fifth conductive layer 125, and the like, above. That is, the flexible substrate 11 is a structure that is hardly conductive when the sensor 1 is in operation. Since other conductive structures disposed between the second conductive layer 122 and the flexible substrate 11 may be used as electrodes, the flexible substrate 11 is made of an insulating material, so that the flexible substrate 11 is prevented from conducting electricity to interfere with the normal operation of the sensor 1. Thus, the flexible substrate 11 made of an insulating material can ensure stable operation of the sensor in the above-described scenario.

In some embodiments, the thickness of the first conductive layer 121 may be substantially equal to the thickness of the second conductive layer 122. In some embodiments, the thickness of the first conductive layer 121 may be approximately equal to the thickness of the second conductive layer 122. In some embodiments, the thickness of the flexible substrate 11 may be greater than the thickness of the first conductive layer 121. In some embodiments, the thickness of the flexible substrate 11 may be greater than the thickness of the second conductive layer 122.

In some embodiments, the thickness of the first conductive layer 121 may range from 3um to 2000um. In some embodiments, the thickness of the first conductive layer 121 ranges from 5um to 150um. In some embodiments, the thickness of the second conductive layer 122 ranges from 3um to 200um. In some embodiments, the thickness of the second conductive layer 122 ranges from 5um to 150um. The thinner the second conductive layer 122 is, the better its capacitive performance, i.e. the more the second conductive layer 122 is able to approach a capacitance, the more accurate the bending of the sensor 1 is based on the processing circuitry reading the capacitance and resistance related parameters of the second conductive layer 122. The thickness range of the second conductive layer is set to be 5-150 um, so that the accuracy of the sensor 1 can be ensured, the processing difficulty and cost can not be excessively improved, and the cost can be reduced while the performance is ensured.

In some embodiments, the thickness of the flexible substrate 11 ranges from 200um to 5500um. In some embodiments, the thickness of the flexible substrate 11 ranges from 300um to 5000um. The thicker the thickness of the flexible substrate 11, the larger the area change of the second conductive layer 122 on the flexible substrate 11, and the larger the change of the resistance of the second conductive layer 122 under the same bending angle, the more accurate the bending condition of the sensor 1 sensed based on the processing circuit reading the capacitance related parameter or the capacitance and resistance related parameter of the second conductive layer 122. The thickness range of the flexible substrate 11 is set to 300 um-5000 um, so that the accuracy of the sensor 1 can be ensured, and the limitation of the sensor using the too thick flexible substrate 11 on the movement of a human body after the sensor is applied to intelligent wearing equipment can be avoided.

In some embodiments, the thickness range of the third conductive layer 123 may be similar to the thickness range of the first conductive layer 121. In some embodiments, the thickness range of the fourth conductive layer 124 may be similar to the thickness range of the first conductive layer 121. In some embodiments, the thickness range of the fifth conductive layer 125 may be similar to the thickness range of the first conductive layer 121. In some embodiments, the thickness range of the further first conductive layer 126 may be similar to the thickness range of the first conductive layer 121. In some embodiments, the thickness range of the other second conductive layer 127 may be similar to the thickness range of the first conductive layer 121.

In some embodiments, the width of the first conductive layer 121 is less than or equal to the width of the second conductive layer 122. In some embodiments, the width of the second conductive layer 122 is less than or equal to the width of the flexible substrate 11. In some embodiments, the width of the second conductive layer 122 is less than or equal to the width of the third conductive layer.

Through such width setting, the signal of the second conductive layer 122 (such as the parameter related to the resistance of the second conductive layer 122, the capacitance of the second conductive layer 122 and the parameter related to the resistance) can be stably read, and meanwhile, the structural rule and stability of the sensor are ensured, and the use experience of a user can be ensured after the sensor is applied to the intelligent wearable device.

In some embodiments, the relationship of the width of the fourth conductive layer 124 to the width of the flexible substrate 11 or other conductive layer may be similar to the relationship of the width of the third conductive layer 123 to the width of the flexible substrate 11 or other conductive layer. In some embodiments, the relationship of the width of the fifth conductive layer 125 to the width of the flexible substrate 11 or other conductive layer may be similar to the relationship of the width of the third conductive layer 123 to the width of the flexible substrate 11 or other conductive layer. In some embodiments, the relationship of the width of the further first conductive layer 126 to the width of the flexible substrate 11 or other conductive layer may be similar to the relationship of the width of the first conductive layer 121 to the width of the flexible substrate 11 or other conductive layer. In some embodiments, the width of the further second conductive layer 127 may be in a similar relationship to the width of the flexible substrate 11 or other conductive layer as the width of the second conductive layer 122. In some embodiments, the relationship of the width of the sixth conductive layer to the width of the flexible substrate 11 or other conductive layer may be similar to the relationship of the width of the first conductive layer 121 to the width of the flexible substrate 11 or other conductive layer. In some embodiments, the relationship of the width of the seventh conductive layer to the width of the flexible substrate 11 or other conductive layer may be similar to the relationship of the width of the second conductive layer 122 to the width of the flexible substrate 11 or other conductive layer.

In some implementations, the sensor 1 further includes a protective sheath 14. In some embodiments, the protective sheath 14 is a flexible material that is insulating and resilient or a flexible material that is highly resistive and resilient. The resistivity of the protective sheath 14 is equal to or higher than that of the conductive layer flexible substrate 11. The protective sheath 14 may protect the sensor (e.g., first sensing structure, second sensing structure, flexible substrate 11, etc.). The protective sheath 14 may have a width greater than or equal to the maximum width of the multilayer structure.

In some embodiments, the side of the first conductive layer 121 remote from the flexible substrate 11 is covered with a first protective structure. The first protective structure may isolate the outer surface (a side surface remote from the flexible substrate 11) of the first conductive layer 121 from the external environment. In some embodiments, the exposed surface of the flexible substrate 11 is covered with a second protective structure. The exposed surface of the flexible substrate 11 refers to the surface not covered by the sensing structures (e.g., first sensing structure, second sensing structure). That is, the surfaces of the flexible substrate 11 not covered by the sensing structure are covered with the second protective structure, thereby isolating the flexible substrate 11 from the external environment. The first protection structure and the second protection structure can ensure the stable operation of the sensor. In particular, when the flexible substrate 11 functions as an electrode (i.e., the electrical conductivity of the flexible substrate 11 is greater than that of the second conductive layer 122), if the flexible substrate 11 is directly exposed to the external environment, it is easy to cause the sensor 1 to be disturbed by the external environment or damaged, and the second protection structure can ensure safe and stable operation of the sensor. In some embodiments, as shown in fig. 7A and 7B, the first protective structure and the second protective structure combine to form a protective sleeve 14. The protective sleeve 14 may be integrally sleeved outside the sensor 1. In some embodiments, the first protective structure and the second protective structure may form a protective sleeve 14 of unitary construction. It should be noted that, the embodiments in this specification may have the first protection structure and the second protection structure.

Fig. 11A-11C show three cases of the protective sheath 14 with four sensing arrangements, respectively. In the embodiment shown in fig. a, the protective sheath 14 includes a first protective structure that protects a side surface of the first conductive layer 121 that is remote from the flexible substrate 11. In the embodiment shown in fig. 11B and 11C, the protective sheath 14 includes not only the first protective structure, but also a third protective structure that protects the sides of all sensing structures (e.g., the first sensing structure 12, the second sensing structure 12', the third sensing structure 13, and the fourth sensing structure 13') and the exposed surface of the flexible substrate 11. The difference between the embodiments of fig. 11B and 11C is that in the embodiment shown in fig. 11B, the adjacent third protective structures are connected as a unitary structure, and the sensor 1 with the protective sheath 14 assumes a regular rectangular shape.

While the basic concepts have been described above, it will be apparent to those skilled in the art that the foregoing detailed disclosure is by way of example only and is not intended to be limiting. Although not explicitly described herein, various modifications, improvements, and adaptations to the present disclosure may occur to one skilled in the art. Such modifications, improvements, and modifications are intended to be suggested within this specification, and therefore, such modifications, improvements, and modifications are intended to be included within the spirit and scope of the exemplary embodiments of the present invention.

Meanwhile, the specification uses specific words to describe the embodiments of the specification. Reference to "one embodiment," "an embodiment," and/or "some embodiments" means that a particular feature, structure, or characteristic is associated with at least one embodiment of the present description. Thus, it should be emphasized and should be appreciated that two or more references to "an embodiment" or "one embodiment" or "an alternative embodiment" in various positions in this specification are not necessarily referring to the same embodiment. Furthermore, certain features, structures, or characteristics of one or more embodiments of the present description may be combined as suitable.

Furthermore, the order in which the elements and sequences are processed, the use of numerical letters, or other designations in the description are not intended to limit the order in which the processes and methods of the description are performed unless explicitly recited in the claims. While certain presently useful inventive embodiments have been discussed in the foregoing disclosure, by way of various examples, it is to be understood that such details are merely illustrative and that the appended claims are not limited to the disclosed embodiments, but, on the contrary, are intended to cover all modifications and equivalent arrangements included within the spirit and scope of the embodiments of the present disclosure. For example, while the system components described above may be implemented by hardware devices, they may also be implemented solely by software solutions, such as installing the described system on an existing server or mobile device.

Likewise, it should be noted that in order to simplify the presentation disclosed in this specification and thereby aid in understanding one or more inventive embodiments, various features are sometimes grouped together in a single embodiment, figure, or description thereof. This method of disclosure, however, is not intended to imply that more features than are presented in the claims are required for the present description. Indeed, less than all of the features of a single embodiment disclosed above.

In some embodiments, numbers describing the components, number of attributes are used, it being understood that such numbers being used in the description of embodiments are modified in some examples by the modifier "about," approximately, "or" substantially. Unless otherwise indicated, "about," "approximately," or "substantially" indicate that the number allows for a 20% variation. Accordingly, in some embodiments, numerical parameters set forth in the specification and claims are approximations that may vary depending upon the desired properties sought to be obtained by the individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and employ a method for preserving the general number of digits. Although the numerical ranges and parameters set forth herein are approximations that may be employed in some embodiments to confirm the breadth of the range, in particular embodiments, the setting of such numerical values is as precise as possible.

Each patent, patent application publication, and other material, such as articles, books, specifications, publications, documents, etc., referred to in this specification is incorporated herein by reference in its entirety. Except for application history documents that are inconsistent or conflicting with the content of this specification, documents that are currently or later attached to this specification in which the broadest scope of the claims to this specification is limited are also. It is noted that, if the description, definition, and/or use of a term in an attached material in this specification does not conform to or conflict with what is described in this specification, the description, definition, and/or use of the term in this specification controls.

Finally, it should be understood that the embodiments described in this specification are merely illustrative of the principles of the embodiments of this specification. Other variations are possible within the scope of this description. Thus, by way of example, and not limitation, alternative configurations of embodiments of the present specification may be considered as consistent with the teachings of the present specification. Accordingly, the embodiments of the present specification are not limited to only the embodiments explicitly described and depicted in the present specification.

Claims

1. A sensor, comprising: a flexible substrate and a first sensing structure including a multilayer structure arranged on one side surface in a thickness direction of the flexible substrate; each layer of the multilayer structure of the first sensing structure is stacked along the thickness direction of the flexible substrate;

The multilayer structure of the first sensing structure includes a first conductive layer and a second conductive layer, the first conductive layer and the second conductive layer being disposed adjacent; the second conductive layer is positioned between the first conductive layer and the flexible substrate; the resistance of the second conductive layer varies with the deformation of the flexible substrate.

2. The sensor of claim 1, wherein the electrical conductivity of both the first conductive layer and the flexible substrate is greater than the electrical conductivity of the second conductive layer; the second conductive layer is disposed adjacent to the flexible substrate.

3. The sensor of claim 1, wherein the multilayer structure further comprises a third conductive layer, the first conductive layer, the second conductive layer, and the third conductive layer being disposed adjacent to one another in sequence in a thickness direction of the flexible substrate; the second conductive layer and the third conductive layer are both located between the first conductive layer and the flexible substrate;

the conductivity of the first conductive layer and the third conductive layer is greater than the conductivity of the second conductive layer; the electrical conductivity of the flexible substrate is less than or equal to the electrical conductivity of the second conductive layer.

4. A sensor according to claim 2 or 3, wherein the resistance-related parameter of the second conductive layer is read by a processing circuit.

5. A sensor according to claim 2 or 3, wherein the parameters relating to capacitance and resistance of the second conductive layer are read by a processing circuit.

6. The sensor of claim 1, wherein the multilayer structure further comprises another first conductive layer and another second conductive layer; the electrical conductivities of the flexible substrate, the first conductive layer and the other first conductive layer are all greater than that of the second conductive layer, and the electrical conductivities of the flexible substrate, the first conductive layer and the other first conductive layer are all greater than that of the other second conductive layer;

the first conductive layer, the second conductive layer, the other first conductive layer and the other second conductive layer are arranged adjacently in order in the thickness direction of the flexible substrate; the further second conductive layer is arranged adjacent to the flexible substrate.

7. The sensor of claim 6, wherein the first conductive layer and the flexible substrate are grounded; the other first conductive layer is connected with a voltage output device of the processing circuit through a fixed resistor.

8. The sensor of claim 1, wherein the multilayer structure further comprises another first conductive layer, another second conductive layer, and a fifth conductive layer;

the first conductive layer, the second conductive layer, the other first conductive layer, the other second conductive layer and the fifth conductive layer are sequentially adjacently arranged in the thickness direction of the flexible substrate;

the conductivity of the flexible substrate is smaller than or equal to the conductivity of the second conductive layer, and the conductivity of the flexible substrate is smaller than or equal to the conductivity of the other second conductive layer; the conductivities of the first conductive layer, the fifth conductive layer and the other first conductive layer are all larger than the conductivities of the second conductive layer, and the conductivities of the first conductive layer, the fifth conductive layer and the other first conductive layer are all larger than the conductivities of the other second conductive layer.

9. The sensor of claim 8, wherein the first conductive layer and the fifth conductive layer are grounded, and the lead from the other first conductive layer is connected to a voltage output device of the processing circuit through a fixed resistor.

10. A sensor according to claim 7 or 9, wherein the parameters relating to capacitance and resistance of the second conductive layer and the further second conductive layer are read by a processing circuit.

11. The sensor of claim 10, wherein the voltage output device of the processing circuit outputs a pulsed voltage, and wherein the capacitance and resistance related parameters comprise voltage values at a plurality of points in time.

12. The sensor of claim 11, wherein a saturation voltage magnitude on the second conductive layer is less than a magnitude of the pulse voltage.

13. The sensor of claim 1, wherein the sensor further comprises a second sensing structure;

the second sensing structure includes a multilayer structure disposed on the other side surface in the thickness direction of the flexible substrate; each layer of the multilayer structure of the second sensing structure is stacked along the thickness direction of the flexible substrate;

the multilayer structure of the second sensing structure also includes a first conductive layer and a second conductive layer, the first conductive layer of the second sensing structure and the second conductive layer of the second sensing structure being disposed adjacent; the conductivity of the first conductive layer of the second sensing structure is greater than that of the second conductive layer of the second sensing structure, and the second conductive layer of the second sensing structure is positioned between the first conductive layer of the second sensing structure and the flexible substrate; the resistance of the second conductive layer of the second sensing structure changes with the deformation of the flexible substrate.

14. The sensor of claim 13, wherein the sensed parameters of the first sensing structure and the second sensing structure are read by a processing circuit, respectively; wherein the detection parameters include: a parameter related to resistance or a parameter related to capacitance and resistance of the second conductive layer of the first sensing structure or a parameter related to resistance or a parameter related to capacitance and resistance of the second conductive layer of the second sensing structure; and

and carrying out differential processing on the detection parameters of the first sensing structure and the detection parameters of the second sensing structure through the processing circuit, and determining deformation parameters of the flexible substrate based on the differential processing result.

15. The sensor of claim 14, wherein a saturation voltage magnitude of the second conductive layer of the first sensing structure is not equal to a saturation voltage magnitude of the second conductive layer of the second sensing structure.

16. The sensor of claim 13, further comprising a third sensing structure and a fourth sensing structure; the third sensing structure includes a multilayer structure disposed on one side surface in the width direction of the flexible substrate; the fourth sensing structure includes a multilayer structure disposed on the other side surface in the width direction of the flexible substrate; each layer of the multilayer structure of the third sensing structure is stacked along the width direction of the flexible substrate, and each layer of the multilayer structure of the fourth sensing structure is stacked along the width direction of the flexible substrate;

The multilayer structures of the third and fourth sensing structures each include a sixth conductive layer and a seventh conductive layer, the sixth and seventh conductive layers being disposed adjacent; the conductivity of the sixth conductive layer is greater than the conductivity of the seventh conductive layer, the seventh conductive layer being located between the sixth conductive layer and the flexible substrate; the resistance of the seventh conductive layer varies with the deformation of the flexible substrate.

17. The sensor of claim 1, wherein the first conductive layer, the second conductive layer, and the flexible substrate each comprise an elastic material.

18. The sensor of claim 17, wherein the elastic material of the first conductive layer and the elastic material of the second conductive layer are each filled with conductive particles; the density of the conductive particles filled in the elastic material of the first conductive layer is greater than the density of the conductive particles filled in the elastic material of the second conductive layer.

19. The sensor of claim 1, wherein a width of the first conductive layer is less than or equal to a width of the second conductive layer; the width of the second conductive layer is less than or equal to the width of the flexible substrate.

20. The sensor of claim 1, further comprising a first protective structure covering a side of the first conductive layer remote from the flexible substrate.

21. The sensor of claim 1, wherein the exposed surface of the flexible substrate is covered with a second protective structure.