CN116987504A - Luminescent material, preparation method thereof and luminescent device comprising luminescent material - Google Patents
Luminescent material, preparation method thereof and luminescent device comprising luminescent material Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 106
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims abstract description 16
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 229910052796 boron Inorganic materials 0.000 claims abstract description 4
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 4
- 150000001875 compounds Chemical class 0.000 claims description 44
- 239000000203 mixture Substances 0.000 claims description 24
- 238000001354 calcination Methods 0.000 claims description 21
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910002651 NO3 Inorganic materials 0.000 claims description 9
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 9
- 150000004820 halides Chemical class 0.000 claims description 9
- 238000003837 high-temperature calcination Methods 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 7
- 229910010272 inorganic material Inorganic materials 0.000 claims description 6
- 239000011147 inorganic material Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 5
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 229910052810 boron oxide Inorganic materials 0.000 claims description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 claims description 3
- 229910001950 potassium oxide Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 abstract description 14
- 238000006862 quantum yield reaction Methods 0.000 abstract description 7
- 238000000295 emission spectrum Methods 0.000 description 14
- 239000011734 sodium Substances 0.000 description 13
- 238000012360 testing method Methods 0.000 description 10
- 230000005284 excitation Effects 0.000 description 9
- 238000000695 excitation spectrum Methods 0.000 description 9
- 239000000843 powder Substances 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 239000005022 packaging material Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000004570 mortar (masonry) Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000012984 biological imaging Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000010431 corundum Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000012271 agricultural production Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 1
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000002431 foraging effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000019837 monoammonium phosphate Nutrition 0.000 description 1
- 229910000403 monosodium phosphate Inorganic materials 0.000 description 1
- 235000019799 monosodium phosphate Nutrition 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
- C09K11/706—Aluminates; Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
- C09K11/71—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus also containing alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
- C09K11/71—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus also containing alkaline earth metals
- C09K11/717—Aluminates; Silicates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7709—Phosphates
- C09K11/771—Phosphates with alkaline earth metals
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7737—Phosphates
- C09K11/7738—Phosphates with alkaline earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Abstract
The invention discloses a luminescent material, a preparation method thereof and a luminescent device containing the luminescent material, wherein the luminescent material is represented by a chemical formula M a N b P x O y :zCr 3+ cLn wherein M is selected from one or more of Li, na, K, rb, cs, zn, mg, ca, sr and Ba, N is selected from one or more of Al, ga, sc, in, fe, mn, ti, zr, V, sb and B, cr 3+ Ln is a rare earth element, a, b, x and y are the simplest stoichiometric numbers of the elements, the light-emitting device comprises a fluorescence conversion layer and an LED semiconductor chip, and the fluorescence conversion layer is arranged on the LED semiconductor chip; the luminescent material of the invention can realize the luminescence in the range of from visible to near infrared 600 to 1100nm, and has high luminescence stability, luminescence quantum yield andweather resistance, further widening the application field.
Description
Technical Field
The invention relates to the technical field of luminescent materials, in particular to a luminescent material, a preparation method thereof and a luminescent device containing the luminescent material.
Background
Along with the development of technology, the demands of people on light sources are not only in the visible light range, but also one of important components in sunlight sources due to the fact that near infrared light is invisible to human eyes, pollution-free and relatively large in penetration depth in biological tissues, so that the near infrared light has important application value in the fields of security monitoring, biological imaging, sensing, food/medical detection and full-spectrum illumination.
The development of the near infrared light source is carried out in several stages such as an incandescent lamp, a halogen tungsten lamp, a xenon lamp, an LED semiconductor, a super-continuous near infrared laser and the like, the early near infrared light source is large in size and short in service life, meanwhile, the utilization rate of near infrared light is low, the LED semiconductor and the super-continuous near infrared laser have the characteristics of high efficiency and small size, but the near infrared emission half-peak width of the LED semiconductor and the super-continuous near infrared laser is short, meanwhile, the price cost is high, and the expansion of the application field of the LED semiconductor and the super-continuous near infrared laser is limited to a great extent. In addition, the mode of white light LEDs is used as a reference in a mode of realizing efficient near infrared light emission, namely, a mature blue/red semiconductor chip is combined with near infrared fluorescent powder, and the near infrared light source obtained by using the technology has the advantages of full solid state, small volume, long service life, high efficiency, energy conservation, wide spectrum and the like. Because the blue light LED chip technology is mature, a wide-spectrum near-infrared fluorescent material with stable chemical property, high quantum efficiency and high thermal quenching property becomes a key for practical use of a near-infrared light source based on blue light LED excited fluorescent powder. Therefore, development of a near infrared luminescent material with a broad spectrum is of great significance.
However, the near infrared materials disclosed in the prior art, in particular Cr 3+ In the doped near infrared fluorescent material, the near infrared luminescent material which can be effectively excited by a blue light source or a red light source and generates stronger near infrared broad spectrum emission and has good fluorescence heat stability is not fully developed. Chinese patent CN 107338046A discloses a MAl 12 O 19 : the xTi near infrared fluorescent powder, M is one or two of Ca and Sr, can be excited by 400-600nm light, emits 650-850nm red light and near infrared light, but has narrower emission spectrum and lower emission intensity. Non-patent document Efficient and Thermally Stable Broad-Bandnear-Infrared Emission ina KAlP 2 O 7 :Cr 3+ Phosphor for Nondestructive Examination reports that a phosphate near infrared luminescent material can emit 650-1100nm red light and near infrared light based on a blue light chip, the emitted light quantum yield is 78.9%, the luminous intensity at 423K is 77% at room temperature, and the luminous efficiency and the thermal stability are still to be improved. Japanese patent publication 2019-87711 discloses a chemical composition of Ca 2 GeO 4 Cr near infrared fluorescent powder, the excitation wavelength range of the fluorescent powder is 400-1000nm, and the luminescence wavelength range is 1000-1600nm. Although the light-emitting device has extremely wide excitation spectrum, the light-emitting efficiency is extremely low under the excitation of a common 450nm blue light chip, and the light-emitting device has afterglow and is not suitable for being manufactured. But not patent literature Cr 3+ -Doped Sc-Based Fluoride Enabling Highly EfficientNear Infrared Luminescence:A Case Study ofK 2 NaScF 6 :Cr 3+ The reported fluoride near infrared luminescent material is synthesized by water phase, is unfavorable for industrial mass production, has cubic morphology, and brings certain difficulty for subsequent encapsulation. However, the near infrared luminescent material with lower emission intensity has near infrared broad spectrum emission, but the efficiency and the luminous thermal stability of the near infrared luminescent material are required to be improved, so the invention provides a luminescent material, a preparation method thereof and a luminescent device containing the luminescent material, which are used for solving the problems in the prior art.
Disclosure of Invention
In view of the above problems, the present invention aims to provide a luminescent material, a preparation method thereof and a luminescent device containing the luminescent material, which solve the problems of low luminescence quantum yield, poor fluorescence stability and poor infrared emission spectrum of the near infrared luminescent material in the prior art.
In order to achieve the purpose of the invention, the invention is realized by the following technical scheme: hairA light material having a chemical composition of formula M a N b P x O y ：zCr 3+ cLn, wherein,
the M element is selected from one or more of Li, na, K, rb, cs, zn, mg, ca, sr and Ba;
the N element is selected from one or more of Al, ga, sc, in, fe, mn, ti, zr, V, sb and B;
the Cr 3+ Is luminescence center ion, and the concentration is 0.01mol% or more and z or less than 100mol%;
ln is a rare earth element and is used as a sensitized ion, and the concentration of the Ln is more than or equal to 0.01mol% and less than or equal to 100mol%;
the a, b, x and y are the simplest stoichiometric numbers of elements, and 0.ltoreq.a <20,0< b <20,0< x <30,0< y <50.
The further improvement is that: the rare earth element is selected from one of Ce, pr, nd, pm, sm, eu, gd, tb, dy, ho, er, tm and Yb, and the Cr 3+ The concentration of z is more than or equal to 2mol% and less than or equal to 15mol%, the luminescent material is excited by purple light, blue light or red light, and the concentration of Ln is more than or equal to 1mol% and less than or equal to 8mol%.
The further improvement is that: the luminescent material comprises the following chemical components: rbAl 3 P 6 O 20 :Cr 3+ 、RbGa 3 P 6 O 20 :Cr 3+ 、CsAl 3 P 6 O 20 :Cr 3+ 、CsGa 3 P 6 O 20 :Cr 3+ 、CsAl 2 BP 6 O 20 :Cr 3+ 、Cs 2 AlP 3 O 10 :Cr 3+ 、Rb 2 AlP 3 O 10 :Cr 3+ 、Cs 2 GaP 3 O 10 :Cr 3+ 、Rb 2 GaP 3 O 10 :Cr 3+ 、Rb 3 InP 2 O 8 :Cr 3+ 、K 3 InP 2 O 8 :Cr 3+ 、K 2 CsScP 2 O 8 :Cr 3+ 、K 3 ScP 2 O 8 :Cr 3+ 、NaCs 2 AlP 2 O 8 :Cr 3+ 、Na 3 GaP 2 O 8 :Cr 3+ 、NaZnAlP 2 O 8 :Cr 3+ 、Na 3 InP 2 O 8 :Cr 3+ 、Na 3 Sc 2 P 3 O 12 :Cr 3+ 、KBaIn 2 P 3 O 12 :Cr 3+ ,Eu 3+ 、NaBaIn 2 P 3 O 12 :Cr 3+ ,Eu 3+ 、KBaIn 2 P 3 O 12 :Cr 3+ ,Pr 3+ 、CsBaIn 2 P 3 O 12 :Cr 3+ ,Eu 3+ 、KBaIn 2 P 3 O 12 :Cr 3+ 、LiBa 2 GaP 4 O 14 :Cr 3+ 、NaBa 2 AlP 4 O 14 :Cr 3+ 、BaIn 2 P 4 O 14 :Cr 3+ 、RbGa 2 P 5 O 16 :Cr 3+ 、CsGa 2 P 5 O 16 :Cr 3+ 、CsZr 2 AlP 4 O 16 :Cr 3+ 、Na 5 Ca 2 AlP 4 O 16 :Cr 3+ 、K 3 In 3 P 4 O 16 :Cr 3+ 、Cs 3 In 3 P 4 O 16 :Cr 3+ 、Ba 3 In 2 P 4 O 16 :Cr 3+ 、Na 6 Al 3 P 5 O 20 :Cr 3+ 、Li 9 Ga 3 P 8 O 29 :Cr 3+ Or Na (or) 7 Al 4 P 9 O 32 :Cr 3+ 。
A method for preparing a luminescent material, comprising the steps of:
step one: first according to chemical formula M a N b P x O y ：zCr 3+ The stoichiometric ratio of each element in cLn is that M source compound, N source compound, P source compound, ln source compound and Cr source compound are mixed to prepare a mixture;
step two: then, presintering the mixture prepared in the step one at low temperature, and calcining at high temperature to obtain a calcined product;
step three: and then carrying out post-treatment on the calcined product obtained in the step two to obtain the luminescent material.
The further improvement is that: in the first step, the M source compound is an M element-containing compound, the M source compound is one or more selected from an M element-containing carbonate, an M element-containing oxide, an M element-containing nitrate and an M element-containing halide, the N source compound is an N element-containing compound, the N source compound is one or more selected from an N element-containing carbonate, an N element-containing oxide, an N element-containing nitrate and an N element-containing halide, the Cr source compound is a Cr element-containing compound, the Cr source compound is one or more selected from a Cr element-containing carbonate, a Cr element-containing oxide, a Cr element-containing nitrate and a Cr element-containing halide, and the P source compound is one or two selected from a P element-containing phosphate and a P element-containing oxide.
The further improvement is that: in the second step, the mixture is subjected to low-temperature presintering, the temperature is kept in an oven for 2-5 hours at the temperature lower than 300 ℃, the high-temperature calcination of the mixture is performed in air, inert atmosphere or reducing atmosphere, the high-temperature calcination temperature of the mixture is 400-1500 ℃, the calcination time is 1-30 hours, and the high-temperature calcination times of the mixture are at least 1 time.
The further improvement is that: in the third step, the post-treatment of the calcined product comprises grinding, washing, filtering and drying, and the post-treatment drying temperature of the calcined product is 60-100 ℃.
A light emitting device includes a luminescence conversion layer and an LED semiconductor chip, the luminescence conversion layer is mounted on the LED semiconductor chip, and the luminescence conversion layer contains a luminescent material.
The further improvement is that: the fluorescent conversion layer is a layer containing an encapsulation material and a luminescent material, wherein the luminescent material is uniformly dispersed in the encapsulation material, the encapsulation material is selected from one of an organic material or an inorganic material, the organic material is selected from one of epoxy resin, polycarbonate or silica gel, and the inorganic material is selected from one of boron oxide, potassium oxide, aluminum oxide or silicon dioxide.
The further improvement is that: the LED semiconductor chip is one or more of a purple light LED chip, a blue light LED chip or a red light LED chip, the peak value range of the purple light LED chip is 280-400 nm, the peak value range of the blue light LED chip is 400-490 nm, and the peak value range of the red light LED chip is 590-680 nm.
The beneficial effects of the invention are as follows: the luminescent material is a near infrared luminescent material with broadband emission characteristics, can be used as a light conversion material of a near ultraviolet LED chip, a blue LED chip and a red LED chip, realizes a high-efficiency stable broadband near infrared luminescent light source, overcomes the problem of narrow bandwidth of the existing infrared LEDs and infrared lasers, can meet the requirements of the broadband infrared light source in the applications of food detection, medical detection, agricultural production or biological imaging and the like, and has higher luminescent stability and luminescent quantum yield compared with the materials in the prior art, and the near infrared luminescent material has excellent moisture resistance and high temperature resistance, the light output power of the prepared LED light source is still more than 98 percent at room temperature after aging for 480 hours in the environment with 85 ℃ and 85 percent humidity.
Drawings
FIG. 1 is an XRD pattern of a luminescent material obtained in example 1 of the present invention;
FIG. 2 is an XRD pattern of the luminescent material obtained in example 2 of the present invention;
FIG. 3 is an XRD pattern of the luminescent material obtained in example 3 of the present invention;
FIG. 4 is a graph showing the excitation spectrum of the luminescent material according to example 1 of the present invention;
FIG. 5 is an emission spectrum of the luminescent material obtained in example 1 of the present invention;
FIG. 6 is a graph showing the excitation spectrum of the luminescent material according to example 2 of the present invention;
FIG. 7 is an emission spectrum of the luminescent material obtained in example 2 of the present invention;
FIG. 8 is a graph showing the excitation spectrum of the luminescent material according to example 3 of the present invention;
FIG. 9 is a graph showing the emission spectrum of the luminescent material obtained in example 3 of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a luminescent material, the chemical composition of which is shown as a chemical formula M a N b P x O y ：zCr 3+ cLn, wherein,
m is one or more selected from Li, na, K, rb, cs, zn, mg, ca, sr and Ba;
the N element is one or more selected from Al, ga, sc, in, fe, mn, ti, zr, V, sb and B;
Cr 3+ is luminescence center ion, and the concentration is 0.01mol% or more and less than or equal to 100mol% of z, preferably 2mol% or less and 15mol% or less of z;
ln is a rare earth element as a sensitized ion and has a concentration of 0.01mol% or less c.ltoreq.100 mol%, preferably 1mol% or less c.ltoreq.8 mol%, wherein the rare earth element is selected from one of Ce, pr, nd, pm, sm, eu, gd, tb, dy, ho, er, tm or Yb;
a. b, x and y are the simplest stoichiometric numbers of elements, and 0.ltoreq.a <20,0< b <20,0< x <30,0< y <50.
The luminescent material has near infrared broadband emission performance, can be excited by purple light, blue light or red light, for example, can emit near infrared light with the wavelength range of 650-1300nm, has a peak value within the range of 700-1000nm, has higher thermal quenching temperature, shows excellent luminescent thermal stability, and has the chemical composition as follows: rbAl 3 P 6 O 20 :Cr 3+ 、RbGa 3 P 6 O 20 :Cr 3+ 、CsAl 3 P 6 O 20 :Cr 3+ 、CsGa 3 P 6 O 20 :Cr 3+ 、CsAl 2 BP 6 O 20 :Cr 3+ 、Cs 2 AlP 3 O 10 :Cr 3+ 、Rb 2 AlP 3 O 10 :Cr 3+ 、Cs 2 GaP 3 O 10 :Cr 3+ 、Rb 2 GaP 3 O 10 :Cr 3+ 、Rb 3 InP 2 O 8 :Cr 3+ 、K 3 InP 2 O 8 :Cr 3+ 、K 2 CsScP 2 O 8 :Cr 3+ 、K 3 ScP 2 O 8 :Cr 3+ 、NaCs 2 AlP 2 O 8 :Cr 3+ 、Na 3 GaP 2 O 8 :Cr 3+ 、NaZnAlP 2 O 8 :Cr 3+ 、Na 3 InP 2 O 8 :Cr 3+ 、Na 3 Sc 2 P 3 O 12 :Cr 3+ 、KBaIn 2 P 3 O 12 :Cr 3+ ,Eu 3+ 、NaBaIn 2 P 3 O 12 :Cr 3+ ,Eu 3+ 、KBaIn 2 P 3 O 12 :Cr 3+ ,Pr 3+ 、CsBaIn 2 P 3 O 12 :Cr 3+ ,Eu 3+ 、KBaIn 2 P 3 O 12 :Cr 3+ 、LiBa 2 GaP 4 O 14 :Cr 3+ 、NaBa 2 AlP 4 O 14 :Cr 3+ 、BaIn 2 P 4 O 14 :Cr 3+ 、RbGa 2 P 5 O 16 :Cr 3+ 、CsGa 2 P 5 O 16 :Cr 3+ 、CsZr 2 AlP 4 O 16 :Cr 3+ 、Na 5 Ca 2 AlP 4 O 16 :Cr 3+ 、K 3 In 3 P 4 O 16 :Cr 3+ 、Cs 3 In 3 P 4 O 16 :Cr 3+ 、Ba 3 In 2 P 4 O 16 :Cr 3+ 、Na 6 Al 3 P 5 O 20 :Cr 3+ 、Li 9 Ga 3 P 8 O 29 :Cr 3+ Or Na (or) 7 Al 4 P 9 O 32 :Cr 3+ 。
The invention also provides a preparation method of the luminescent material, which comprises the following steps:
step one: first according to chemical formula M a N b P x O y ：zCr 3+ The stoichiometric ratio of each element in cLn is that M source compound, N source compound, P source compound, ln source compound and Cr source compound are mixed to prepare a mixture;
the M source compound is one or more selected from M-containing carbonate, M-containing oxide, M-containing nitrate, and M-containing halide, preferably M-containing carbonate, M-containing oxide, such as Na 2 CO 3 、Li 2 CO 3 、K 2 CO 3 、Rb 2 CO 3 、Cs 2 CO 3 、RbNO 3 Or CsNO 3 ；
The N source compound is one or more selected from N-containing carbonate, N-containing oxide, N-containing nitrate, and N-containing halide, preferably N-containing carbonate, N-containing oxide, such as Al 2 O 3 、Sc 2 O 3 、In 2 O 3 、Ga 2 O 3 、Al(NO 3 ) 3 ·9H 2 O、Ga(NO 3 ) 3 ·xH 2 O or ZnO, zrO 2 ；
The Cr source compound is one or more selected from Cr-containing carbonate, cr-containing oxide, cr-containing nitrate, and Cr-containing halide, preferably Cr 2 O 3 、Cr(NO 3 ) 3 ·9H 2 O or CrF 3 ；
The P source compound is selected from one or two of phosphate containing P element and oxide containing P element, preferably ammonium dihydrogen phosphate, phosphoric acid and sodium dihydrogen phosphate;
mixing the M source compound, the N source compound, the P source compound, the Ln source compound and the Cr source compound, and grinding by adopting grinding equipment such as a mortar, a ball mill, a mixer and the like;
step two: then, presintering the mixture prepared in the step one at low temperature, and calcining at high temperature to obtain a calcined product;
step three: and then carrying out post-treatment on the calcined product obtained in the step two to obtain the luminescent material.
The further improvement is that: in the second step, the mixture is kept at a temperature lower than 300 ℃ for 2-5 hours in an oven when being presintered at a low temperature, the high-temperature calcination of the mixture is carried out in air, inert atmosphere or reducing atmosphere, the inert atmosphere is selected from nitrogen or argon, and the reducing atmosphere is selected from (5-15 v%) H 2 And (95 to 85 v%) N 2 The high temperature calcination temperature of the mixture is 400-1500 ℃, preferably 600-1200 ℃, more preferably 800-1100 ℃, the calcination time is 1-30 h, preferably 5-20 h, more preferably 8-15 h, the high temperature calcination times of the mixture are at least 1 time, can be 2 times, 3 times or more, the temperature of each calcination is different from each other, the temperature of each calcination is in an ascending trend, the last calcination can be ground, for example, two times of calcination are carried out, the first calcination temperature is 300-700 ℃, and the calcination time is 1-10 h before the next calcination is carried out; the second calcination temperature is 700-1500 ℃ and the calcination time is 1-20 h.
The further improvement is that: and step three, the post-treatment of the calcined product comprises grinding, washing, filtering and drying, wherein the post-treatment drying temperature of the calcined product is 60-100 ℃, the calcined product is washed with deionized water for 1-3 times during washing, then is washed with absolute ethyl alcohol for 1-2 times, and is dried in an oven at 80 ℃ after filtering.
The light-emitting device comprises a fluorescence conversion layer and an LED semiconductor chip, wherein the fluorescence conversion layer is coated on the LED semiconductor chip, the LED semiconductor chip is used for bearing the fluorescence conversion layer, the fluorescence conversion layer is arranged on the LED semiconductor chip, the fluorescence conversion layer comprises a luminescent material, the fluorescence conversion layer is a layer comprising a packaging material and a luminescent material, the luminescent material is uniformly dispersed in the packaging material, the packaging material is selected from one of an organic material or an inorganic material, the organic material is selected from one of epoxy resin, polycarbonate or silica gel, the inorganic material is selected from one of boron oxide, potassium oxide and alumina or silica gel, the packaging material is preferably silica gel, the packaging material is uniformly coated on the LED semiconductor chip, the LED semiconductor chip is selected from one or more of a purple light LED chip, a blue light LED chip or a red light LED chip, the peak value range of the purple light LED chip is 280-400 nm, the peak value range of the blue light LED chip is 400-490 nm, and the peak value range of the red light LED chip is 590-680 nm.
The light emitting device is a fluorescence conversion type near infrared LED device, and the fluorescence conversion type near infrared LED device is used in the fields of full spectrum illumination, food detection, medical detection, biological imaging, agricultural production or security monitoring and the like.
Example 1
The embodiment adopts a solid phase reaction method to synthesize, firstly, according to the chemical formula RbAl 3 P 6 O 20 ：4％Cr 3+ The stoichiometric ratio of each element is used for weighting and Rb 2 CO 3 ，Al 2 O 3 ，(NH 4 )H 2 PO 4 ，Cr 2 O 3 The preparation method comprises the steps of mixing the raw materials uniformly in a mortar, putting the raw materials into a corundum crucible, putting the corundum crucible into an oven, preserving heat for 2 hours at 200 ℃, cooling the sample, taking out the sample, putting the sample into a box-type furnace, calcining for 5 hours at 500 ℃ in an air atmosphere, grinding again after cooling to room temperature, putting the sample into the box-type furnace, calcining for 8 hours at 780 ℃, grinding the obtained sample after the calcining is finished, washing the sample with deionized water for 1-3 times, washing the sample with absolute ethyl alcohol for 1-3 times, filtering, and drying the sample in the oven at 80 ℃ to obtain the final near infrared luminescent material.
Examples 2 to 37
The preparation steps of examples 2 to 37 are basically the same as those of example 1, the materials are weighed according to the stoichiometric ratio of the corresponding chemical formula, the raw materials are uniformly mixed in a mortar, then the mortar is put into a corundum crucible, the presintering step is consistent with that of example 1, the first calcination temperature is 300 to 600 ℃ according to the different materials, and the heat preservation time is 3 to 8 hours; the temperature of the second calcination is selected to be 700-1400 ℃, the heat preservation time is 5-10 h, after the calcination is finished, the obtained sample is ground, the sample is washed for 1-3 times by deionized water, then is washed for 1-3 times by absolute ethyl alcohol, and is dried in an oven at 80 ℃ after being filtered, so that the final near infrared luminescent material is obtained. The specific raw material amounts are shown in table 1 below, and the specific preparation parameters are shown in table 2 below.
TABLE 1 raw materials dosage table
The phases of the samples of examples and comparative examples were analyzed using an X-ray powder diffractometer (Minflex 600, japan physics).
The excitation and emission spectra of the samples were measured with a FLS980 (Edinburgh instruments) fluorescence spectrometer, and the thermal stability of the materials was evaluated by testing the temperature-varying emission spectra of the materials in combination with a 77-600K temperature-varying stage.
The materials were evaluated for their moisture and high temperature stability at 85 ℃ and 85% humidity using a constant temperature and humidity test box.
XRD analysis of the samples synthesized by the solid phase reaction showed pure phases. For example, XRD diffractograms of the near infrared luminescent materials prepared in example 1, example 2, example 3 are shown in fig. 1, fig. 2, fig. 3; as can be seen from fig. 1, the luminescent material is a pure phase target product.
The excitation and emission spectra of the samples were measured with an FLS980 (Edinburgh instruments) fluorescence spectrometer. Fig. 4 to 9 show excitation and emission spectra of the luminescent materials of examples 1 to 3. The excitation spectrum of the luminescent material of example 3 is shown in FIG. 8, and the excitation spectrum of the luminescent material comprises three effective excitation bands of 200-350 nm, 400-500 nm and 550-730 nm respectively; the emission spectrum of the luminescent material is shown in fig. 9, and it can be seen that the emission spectrum of the luminescent material covers 660-1100 nm, i.e., has near infrared broadband emission performance. The light emission intensity of the light-emitting material of example 1 was set to 100, the sub-light emission intensity was the integrated area of the emission spectrum, and the results of the light emission integrated area of the other examples were compared with the value shown in table 2.
And (3) coupling an excitation light source through an optical fiber by adopting an optical fiber spectrometer (ATP 5020R), and connecting an integrating sphere to test the luminous quantum yield of the material. The luminescent material of example 1 has an internal quantum yield of 84% and an external quantum yield of 34% under excitation with 450nm blue light.
Regarding the thermal stability of the luminescent material, the ratio of the integrated luminescence intensity of the luminescent material at 150 ℃ to the integrated luminescence intensity at room temperature was used for evaluation. The testing method comprises the following steps: the luminescent material is placed on a heating table, excitation light is introduced through an optical fiber, the emission spectrum of the luminescent material is tested after the heating table is heated to a target temperature, and the emission spectra of samples at different temperatures are tested. Table 2 shows RbAl obtained in example 1 of the present invention 3 P 6 O 20 ：4％Cr 3+ Luminescent material having a ratio of integrated luminescence intensity at 150 ℃ to integrated luminescence intensity at room temperature of up to 89%, thereby explaining the present inventionThe prepared luminescent material has good thermal stability.
Moisture and high temperature resistance stability test of luminescent materials: the near infrared luminescent materials prepared in the examples were respectively placed in a constant temperature and humidity test box with 85 ℃ and 85% relative humidity for aging, and after 480 hours, the samples were subjected to luminescence intensity test to evaluate the humidity resistance and high temperature resistance stability of the luminescent materials. As shown in table 2, it can be seen from table 2 that the luminescent material of the present invention can maintain the maximum luminous intensity of 97% or more at room temperature under the high-temperature and high-humidity environment. Therefore, the near infrared luminescent material prepared by the invention has higher moisture resistance and high temperature resistance stability.
Table 2 test results table
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Example 38
The present example provides an LED light source comprising an LED semiconductor chip and the luminescent material prepared in example 1, wherein the LED semiconductor chip is a commercially available blue LED chip having a wavelength of 450 nm.
The preparation method of the LED light source comprises the following steps: the near-infrared luminescent material RbAl prepared in example 1 of the present invention 3 P 6 O 20 ：4％Cr 3+ Uniformly mixing the materials in silica gel according to the mass ratio of 1:1, coating the mixture on an LED chip, and curing to obtain the LED light source.
The performance of the LED light source prepared in example 38 was tested using HASS-2000 (photovoltaics, inc. In hangzhou) single LED/module photo-electric test system with a test current of 60mA and a voltage of 3V. The light output power of the light source in the near infrared range can reach 30mW through testing.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A luminescent material, characterized in that: the chemical composition of the luminescent material is represented by the chemical formula M a N b P x O y :zCr 3+ cLn, wherein,
the M element is selected from one or more of Li, na, K, rb, cs, zn, mg, ca, sr and Ba;
the N element is selected from one or more of Al, ga, sc, in, fe, mn, ti, zr, V, sb and B;
the Cr 3+ Is luminescence center ion, and the concentration is 0.01mol% or more and z or less than 100mol%;
ln is a rare earth element and is used as a sensitized ion, and the concentration of the Ln is more than or equal to 0.01mol% and less than or equal to 100mol%;
the a, b, x and y are the simplest stoichiometries of the elements, and 0.ltoreq.a <20,0< b <20,0< x <30,0< y <50.
2. A luminescent material as claimed in claim 1, characterized in that: the rare earth element is selected from one of Ce, pr, nd, pm, sm, eu, gd, tb, dy, ho, er, tm and Yb, and the Cr 3+ The concentration of z is more than or equal to 2mol% and less than or equal to 15mol%, the luminescent material is excited by purple light, blue light or red light, and the concentration of Ln is more than or equal to 1mol% and less than or equal to 8 mol%。
3. A luminescent material as claimed in claim 1, characterized in that: the luminescent material comprises the following chemical components: rbAl 3 P 6 O 20 :Cr 3+ 、RbGa 3 P 6 O 20 :Cr 3+ 、CsAl 3 P 6 O 20 :Cr 3+ 、CsGa 3 P 6 O 20 :Cr 3+ 、CsAl 2 BP 6 O 20 :Cr 3+ 、Cs 2 AlP 3 O 10 :Cr 3+ 、Rb 2 AlP 3 O 10 :Cr 3+ 、Cs 2 GaP 3 O 10 :Cr 3+ 、Rb 2 GaP 3 O 10 :Cr 3+ 、Rb 3 InP 2 O 8 :Cr 3+ 、K 3 InP 2 O 8 :Cr 3+ 、K 2 CsScP 2 O 8 :Cr 3+ 、K 3 ScP 2 O 8 :Cr 3+ 、NaCs 2 AlP 2 O 8 :Cr 3+ 、Na 3 GaP 2 O 8 :Cr 3+ 、NaZnAlP 2 O 8 :Cr 3+ 、Na 3 InP 2 O 8 :Cr 3+ 、Na 3 Sc 2 P 3 O 12 :Cr 3+ 、KBaIn 2 P 3 O 12 :Cr 3+ ,Eu 3+ 、NaBaIn 2 P 3 O 12 :Cr 3+ ,Eu 3+ 、KBaIn 2 P 3 O 12 :Cr 3+ ,Pr 3+ 、CsBaIn 2 P 3 O 12 :Cr 3+ ,Eu 3+ 、KBaIn 2 P 3 O 12 :Cr 3+ 、LiBa 2 GaP 4 O 14 :Cr 3+ 、NaBa 2 AlP 4 O 14 :Cr 3+ 、BaIn 2 P 4 O 14 :Cr 3+ 、RbGa 2 P 5 O 16 :Cr 3+ 、CsGa 2 P 5 O 16 :Cr 3+ 、CsZr 2 AlP 4 O 16 :Cr 3+ 、Na 5 Ca 2 AlP 4 O 16 :Cr 3+ 、K 3 In 3 P 4 O 16 :Cr 3+ 、Cs 3 In 3 P 4 O 16 :Cr 3+ 、Ba 3 In 2 P 4 O 16 :Cr 3+ 、Na 6 Al 3 P 5 O 20 :Cr 3+ 、Li 9 Ga 3 P 8 O 29 :Cr 3+ Or Na (or) 7 Al 4 P 9 O 32 :Cr 3+ 。
4. A method for preparing a luminescent material as claimed in claim 1, characterized in that it comprises the following steps:
step one: first according to chemical formula M a N b P x O y :zCr 3+ The stoichiometric ratio of each element in cLn is that M source compound, N source compound, P source compound, ln source compound and Cr source compound are mixed to prepare a mixture;
step two: then, presintering the mixture prepared in the step one at low temperature, and calcining at high temperature to obtain a calcined product;
step three: and then carrying out post-treatment on the calcined product obtained in the step two to obtain the luminescent material.
5. The method for producing a luminescent material according to claim 4, wherein: in the first step, the M source compound is an M element-containing compound, the M source compound is one or more selected from an M element-containing carbonate, an M element-containing oxide, an M element-containing nitrate and an M element-containing halide, the N source compound is an N element-containing compound, the N source compound is one or more selected from an N element-containing carbonate, an N element-containing oxide, an N element-containing nitrate and an N element-containing halide, the Cr source compound is a Cr element-containing compound, the Cr source compound is one or more selected from a Cr element-containing carbonate, a Cr element-containing oxide, a Cr element-containing nitrate and a Cr element-containing halide, and the P source compound is one or two selected from a P element-containing phosphate and a P element-containing oxide.
6. The method for producing a luminescent material according to claim 4, wherein: in the second step, the mixture is subjected to low-temperature presintering, the temperature is kept in an oven for 2-5 hours at the temperature lower than 300 ℃, the high-temperature calcination of the mixture is performed in air, inert atmosphere or reducing atmosphere, the high-temperature calcination temperature of the mixture is 400-1500 ℃, the calcination time is 1-30 hours, and the high-temperature calcination times of the mixture are at least 1 time.
7. The method for producing a luminescent material according to claim 4, wherein: in the third step, the post-treatment of the calcined product comprises grinding, washing, filtering and drying, and the post-treatment drying temperature of the calcined product is 60-100 ℃.
8. A light emitting device, characterized by: the fluorescent light emitting diode comprises a fluorescent conversion layer and an LED semiconductor chip, wherein the fluorescent conversion layer is arranged on the LED semiconductor chip and comprises the luminescent material of any one of claims 1 to 3 or the luminescent material prepared by the preparation method of any one of claims 4 to 7.
9. A light emitting device according to claim 8 wherein: the fluorescent conversion layer is a layer containing an encapsulation material and a luminescent material, wherein the luminescent material is uniformly dispersed in the encapsulation material, the encapsulation material is selected from one of an organic material or an inorganic material, the organic material is selected from one of epoxy resin, polycarbonate or silica gel, and the inorganic material is selected from one of boron oxide, potassium oxide, aluminum oxide or silicon dioxide.
10. A light emitting device according to claim 8 wherein: the LED semiconductor chip is one or more of a purple light LED chip, a blue light LED chip or a red light LED chip, the peak value range of the purple light LED chip is 280-400 nm, the peak value range of the blue light LED chip is 400-490 nm, and the peak value range of the red light LED chip is 590-680 nm.
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