CN116987501A - Phosphor, light emitting device, illumination device, image display device, and display lamp for vehicle - Google Patents
Phosphor, light emitting device, illumination device, image display device, and display lamp for vehicle Download PDFInfo
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- CN116987501A CN116987501A CN202310826215.8A CN202310826215A CN116987501A CN 116987501 A CN116987501 A CN 116987501A CN 202310826215 A CN202310826215 A CN 202310826215A CN 116987501 A CN116987501 A CN 116987501A
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- Prior art keywords
- phosphor
- light
- emitting device
- formula
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 306
- 238000005286 illumination Methods 0.000 title abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 42
- 239000000203 mixture Substances 0.000 claims abstract description 41
- 238000000295 emission spectrum Methods 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- 229910052712 strontium Inorganic materials 0.000 claims description 19
- 229910052693 Europium Inorganic materials 0.000 claims description 14
- 229910052727 yttrium Inorganic materials 0.000 claims description 13
- 229910052788 barium Inorganic materials 0.000 claims description 12
- 229910052706 scandium Inorganic materials 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 10
- 229910052744 lithium Inorganic materials 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 229910052740 iodine Inorganic materials 0.000 claims description 9
- 229910052700 potassium Inorganic materials 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000002223 garnet Substances 0.000 claims description 7
- 238000001748 luminescence spectrum Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 5
- 238000004020 luminiscence type Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 22
- 230000003595 spectral effect Effects 0.000 abstract description 20
- 238000009877 rendering Methods 0.000 abstract description 19
- 238000000034 method Methods 0.000 description 23
- 239000002994 raw material Substances 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 17
- 239000002245 particle Substances 0.000 description 17
- 230000005284 excitation Effects 0.000 description 15
- 238000005259 measurement Methods 0.000 description 15
- 239000011575 calcium Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- 229910052733 gallium Inorganic materials 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 9
- 229910052746 lanthanum Inorganic materials 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052791 calcium Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229910052684 Cerium Inorganic materials 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000000634 powder X-ray diffraction Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000000695 excitation spectrum Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- -1 organic acid salts Chemical class 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 239000012190 activator Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000007580 dry-mixing Methods 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 102100032047 Alsin Human genes 0.000 description 2
- 101710187109 Alsin Proteins 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- XPIIDKFHGDPTIY-UHFFFAOYSA-N F.F.F.P Chemical class F.F.F.P XPIIDKFHGDPTIY-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 230000005457 Black-body radiation Effects 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910016655 EuF 3 Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910003668 SrAl Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- AEEAZFQPYUMBPY-UHFFFAOYSA-N [I].[W] Chemical compound [I].[W] AEEAZFQPYUMBPY-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000004371 high visual acuity Effects 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000001683 neutron diffraction Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- WPPDXAHGCGPUPK-UHFFFAOYSA-N red 2 Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=2C=3C4=CC=C5C6=CC=C7C8=C(C=9C=CC=CC=9)C9=CC=CC=C9C(C=9C=CC=CC=9)=C8C8=CC=C(C6=C87)C(C=35)=CC=2)C4=C1C1=CC=CC=C1 WPPDXAHGCGPUPK-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004467 single crystal X-ray diffraction Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000003799 water insoluble solvent Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7706—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77346—Aluminium Nitrides or Aluminium Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
Abstract
The present application provides a phosphor having a good emission peak wavelength, a narrow spectral half-width, and/or a high emission intensity. Further, a light emitting device, an illumination device, an image display device, and a vehicle display lamp excellent in color rendering property, color reproducibility, and/or conversion efficiency are provided. The present application relates to a phosphor including a crystal phase having a composition represented by a specific composition formula, and having a minimum value of reflectance of 20% or more in a predetermined wavelength region, the predetermined wavelength region being a region having a light emission peak wavelength of 800nm, and a light-emitting device including the phosphor.
Description
The present application is a divisional application of the application application having application number 202280005282.7, application day 2022, 8, 19, and the name "phosphor, light emitting device, lighting device, image display device, and display lamp for vehicle".
Technical Field
The present application relates to a phosphor, a light emitting device, an illumination device, an image display device, and a display lamp for a vehicle.
Background
In recent years, due to the trend of energy saving, the demands for illumination and backlight using LEDs have been increasing. The LED used herein is a white light emitting LED in which a fluorescent material is arranged on an LED chip that emits light having a blue or near ultraviolet wavelength.
As this type of white light emitting LED, an LED in which a blue LED chip is provided with a nitride phosphor that emits red light by using blue light from the blue LED chip as excitation light and a phosphor that emits green light has been used in recent years. As LEDs, there is a demand for higher luminous efficiency, and a phosphor excellent in luminous characteristics of a red phosphor and a light emitting device including such a phosphor are desired.
As a red phosphor used in a light-emitting device, for example, a general formula K is known 2 (Si，Ti)F 6 ：Mn、K 2 Si 1－ x Na x Al x F 6 KSF phosphor represented by Mn (0 < x < 1), alSiN represented by general formula (Sr, ca) 3 Eu represents an S/CASN phosphor, etc., but KSF phosphor is a highly toxic substance activated by Mn, and thus a phosphor more friendly to the human body and the environment is required. In addition, since the S/CASN phosphor has a half-width (hereinafter, sometimes referred to as "spectral half-width" or "A full width at half maximum" or "FWHM") of about 80nm to 90nm in most of the luminescence spectrumSince the emission wavelength region easily includes a wavelength region having low relative visual sensitivity, a red phosphor having a narrower spectral half-width is required from the viewpoint of improving conversion efficiency.
In addition, as a red phosphor which can be used for a light emitting device in recent years, for example, patent document 1 discloses a phosphor made of SrLiAl in examples 3 N 4 Eu, a phosphor represented by the formula.
Prior art literature
Patent literature
Patent document 1: japanese patent No. 6335884
Disclosure of Invention
However, the phosphor described in patent document 1 has insufficient emission intensity, and a phosphor having more excellent emission intensity and a light-emitting device having more excellent conversion efficiency are demanded.
In view of the above problems, an object of the present invention is to provide a light-emitting device, an illumination device, an image display device, and/or a vehicle display lamp that are excellent in color rendering properties, color reproducibility, and/or conversion efficiency from one point of view.
The present inventors have conducted intensive studies and as a result, have found that the above problems can be solved by using a phosphor or a light-emitting device provided with the phosphor, which contains a crystal phase represented by a specific composition and has a reflectance in a predetermined wavelength region or a reflectance difference or ratio between a plurality of predetermined wavelength regions in a predetermined range, and have completed the present invention. In the following, non-limiting embodiments are shown.
< 1 > a light-emitting device comprising a phosphor,
the phosphor contains a crystal phase having a composition represented by the following formula [1],
and the minimum value of the reflectance of the phosphor in a predetermined wavelength region, which is a region of the phosphor having a light emission peak wavelength of 800nm, is 20% or more.
Re x MA a MB b MC c N d X e [1]
(in the above-mentioned formula [1],
MA contains more than 1 element selected from Sr, ca, ba, na, K, Y, gd and La,
MB contains 1 or more elements selected from Li, mg and Zn,
MC contains more than 1 element selected from Al, si, ga, in and Sc,
x contains more than 1 element selected from F, cl, br and I,
re contains 1 or more elements selected from Eu, ce, pr, tb and Dy,
a. b, c, d, e, x satisfy the following formulas, respectively.
0.7≤a≤1.3
0.7≤b≤1.3
2.4≤c≤3.6
3.2≤d≤4.8
0.0≤e≤0.2
0.0＜x≤0.2)
< 2 > a light-emitting device comprising a phosphor,
the phosphor contains a crystal phase having a composition represented by the following formula [2],
and the minimum value of the reflectance of the phosphor in a predetermined wavelength region, which is a region of the phosphor having a light emission peak wavelength of 800nm, is 20% or more.
Re x MA a MB b (MC’ 1－y MD y ) c N d X e [2]
(in the above-mentioned formula [2],
MA contains more than 1 element selected from Sr, ca, ba, na, K, Y, gd and La,
MB contains 1 or more elements selected from Li, mg and Zn,
MC' is Al, and the metal is selected from the group consisting of aluminum,
MD contains 1 or more elements selected from Si, ga, in and Sc,
x contains more than 1 element selected from F, cl, br and I,
re contains 1 or more elements selected from Eu, ce, pr, tb and Dy,
a. b, c, d, e, x, y satisfy the following formulas, respectively.
0.7≤a≤1.3
0.7≤b≤1.3
2.4≤c≤3.6
3.2≤d≤4.8
0.0≤e≤0.2
0.0＜x≤0.2
0.0＜y≤1.0)
The light-emitting device according to < 1 > or < 2 > wherein 80 mol% or more of MA in the formula [1] or the formula [2] is 1 or more elements selected from Sr, ca and Ba.
The light-emitting device according to < 1 > or < 2 > wherein 80 mol% or more of MB in the above formula [1] or formula [2] is Li.
The light-emitting device according to < 1 > wherein 80 mol% or more of MC in the formula [1] is composed of 1 or more elements selected from Al and Ga.
The light-emitting device according to < 6 > and < 5 >, wherein 80 mol% or more of MC in the formula [1] is Al.
A light-emitting device according to < 7 > and < 2 >, wherein in the formula [2], 80 mol% or more of MD is Ga.
The light-emitting device according to < 1 > or < 2 > wherein 80 mol% or more of Re in the formula [1] or the formula [2] is Eu.
A light-emitting device according to < 1 > or < 2 > wherein the space group of the crystal phase having the composition represented by the above formula [1] or formula [2] is P-1.
The light-emitting device according to < 1 > or < 2 >, wherein the phosphor has a light emission spectrum having a light emission peak wavelength in a range of 620nm to 660 nm.
The light-emitting device according to < 1 > or < 2 >, wherein the phosphor has a full width at half maximum (FWHM) of 70nm or less.
The light-emitting device according to < 1 > or < 2 > further comprises a yellow phosphor and/or a green phosphor.
The light-emitting device according to < 13 > to < 12 >, wherein the yellow phosphor and/or the green phosphor contains at least 1 of garnet phosphor, silicate phosphor, nitride phosphor and oxynitride phosphor.
The light-emitting device according to < 14 > to < 1 > or < 2 > includes a 1 st light-emitting body and a 2 nd light-emitting body that emits visible light by irradiation with light from the 1 st light-emitting body, and the 2 nd light-emitting body includes a phosphor containing a crystal phase having a composition represented by the above formula [1 ].
< 15 > an illumination device comprising the light-emitting device described as < 14 > as a light source.
< 16 > an image display device having the light-emitting device described as < 14 > as a light source.
A display lamp for a vehicle, comprising the light-emitting device described as < 14 > as a light source.
< 18 > a phosphor comprising a crystalline phase having a composition represented by the following formula [1],
And the minimum value of the reflectance in a predetermined wavelength region is 20% or more, and the predetermined wavelength region is a region having a light emission peak wavelength of 800 nm.
Re x MA a MB b MC c N d X e [1]
(in the above-mentioned formula [1],
MA contains more than 1 element selected from Sr, ca, ba, na, K, Y, gd and La,
MB contains 1 or more elements selected from Li, mg and Zn,
MC contains more than 1 element selected from Al, si, ga, in and Sc,
x contains more than 1 element selected from F, cl, br and I,
re contains 1 or more elements selected from Eu, ce, pr, tb and Dy,
a. b, c, d, e, x satisfy the following formulas, respectively.
0.7≤a≤1.3
0.7≤b≤1.3
2.4≤c≤3.6
3.2≤d≤4.8
0.0≤e≤0.2
0.0＜x≤0.2)
< 19 > a phosphor comprising a crystalline phase having a composition represented by the following formula [2],
and the minimum value of the reflectance in a predetermined wavelength region is 20% or more, and the predetermined wavelength region is a region having a light emission peak wavelength of 800 nm.
Re x MA a MB b (MC’ 1－y MD y ) c N d X e [2]
(in the above-mentioned formula [2],
MA contains more than 1 element selected from Sr, ca, ba, na, K, Y, gd and La,
MB contains 1 or more elements selected from Li, mg and Zn,
MC' is Al, and the metal is selected from the group consisting of aluminum,
MD contains 1 or more elements selected from Si, ga, in and Sc,
x contains more than 1 element selected from F, cl, br and I,
re contains 1 or more elements selected from Eu, ce, pr, tb and Dy,
a. b, c, d, e, x, y satisfy the following formulas, respectively.
0.7≤a≤1.3
0.7≤b≤1.3
2.4≤c≤3.6
3.2≤d≤4.8
0.0≤e≤0.2
0.0＜x≤0.2
0.0＜y≤1.0)
In the above formula [1] or [2], 80 mol% or more of MA is an element selected from 1 or more of Sr, ca and Ba.
The phosphor according to < 21 > to < 18 > or < 19 >, wherein 80 mol% or more of MB in the above formula [1] or formula [2] is Li.
The phosphor according to < 22 > and < 18 >, wherein 80 mol% or more of MC in the formula [1] is composed of 1 or more elements selected from Al and Ga.
The phosphor according to < 23 > and < 22 >, wherein 80 mol% or more of MC in the formula [1] is Al.
The phosphor according to < 24 > and < 19 >, wherein in the formula [2], 80 mol% or more of MD is Ga.
The phosphor according to < 18 > or < 19 > wherein 80 mol% or more of Re in the formula [1] or the formula [2] is Eu.
A phosphor according to < 18 > or < 19 > wherein the space group of the crystal phase having the composition represented by the above formula [1] or the above formula [2] is P-1.
The phosphor according to < 18 > or < 19 > wherein the emission spectrum has an emission peak wavelength in the range of 620nm to 660 nm.
A phosphor according to < 18 > or < 19 > wherein the full width at half maximum (FWHM) of the luminescence spectrum is 70nm or less.
The present invention can provide a light-emitting device, an illumination device, an image display device, and/or a vehicle display lamp having excellent color rendering properties, color reproducibility, and/or conversion efficiency in various embodiments.
Drawings
Fig. 1 is an XRD pattern of the phosphor of example 1 and comparative example 1.
Fig. 2 is the emission spectra of the phosphors of example 1 and comparative example 1.
FIG. 3 shows XRD patterns of phosphors according to examples 4 to 10.
Fig. 4A is the emission spectra of the phosphors of comparative example 1 and examples 4 to 9.
Fig. 4B shows the emission spectra of the phosphors of comparative example 1 and examples 10 to 12.
Fig. 5 is a normalized emission spectrum of the phosphor of examples 4, 5, 9 and reference example 1.
Fig. 6A is a spectral reflectance curve of the phosphors of each of the examples and comparative examples.
Fig. 6B is a spectral reflectance curve of the phosphor of each example.
Fig. 6C is a spectral reflectance curve of the phosphor of each example.
Fig. 6D is a spectral reflectance curve of the phosphor of each example.
Fig. 7 a to D are graphs showing the relationship between the difference in the minimum values of the reflectances in the plurality of specific wavelength regions and the relative emission intensity or the relationship between the ratio of the minimum values of the reflectances in the plurality of specific wavelength regions and the relative emission intensity of the phosphor according to each example.
Fig. 8 a to G are graphs showing the light emission characteristics of the light emitting device simulated in the embodiment.
Detailed Description
The present invention will be described below with reference to the embodiments and examples, but the present invention is not limited to the embodiments and examples described below, and can be implemented by arbitrarily changing the shape of the components within the scope of the present invention.
In the present specification, a numerical range indicated by "to" is a range including numerical values described before and after "to" as a lower limit value and an upper limit value. In the composition formula of the phosphor in the present specification, the division of each composition formula is indicated by a break. In addition, when a plurality of elements are listed by comma (,) break-off means that 1 or 2 or more of the listed elements may be contained in any combination and composition. For example, "(Ca, sr, ba) Al 2 O 4 Eu' is a compositional formula that generally represents all of the following: "CaAl 2 O 4 :Eu”、“SrAl 2 O 4 :Eu”、“BaAl 2 O 4 :Eu”、“Ca 1－x Sr x Al 2 O 4 :Eu”、“Sr 1－ x Ba x Al 2 O 4 :Eu”、“Ca 1－x Ba x Al 2 O 4 Eu ", and Ca 1－x－y Sr x Ba y Al 2 O 4 Eu "(wherein, in the formula, 0 < x < 1,0 < y < 1,0 < x+y < 1).
< phosphor >)
The present invention is, in one embodiment, a phosphor containing a crystal phase having a composition represented by the following formula [1], and having a minimum value of 20% or more in a reflectance in a wavelength region from a light emission peak wavelength to 800nm (hereinafter, referred to as "the phosphor of the present embodiment [1 ]), and the phosphor of the present embodiment [1] and a phosphor of the present embodiment [2] described later are sometimes collectively referred to as" the phosphor of the present embodiment ").
In another embodiment, the present invention is a light-emitting device including the phosphor [1] of the present embodiment.
Re x MA a MB b MC c N d X e [1]
(in the above-mentioned formula [1],
MA contains more than 1 element selected from Sr, ca, ba, na, K, Y, gd and La,
MB contains 1 or more elements selected from Li, mg and Zn,
MC contains more than 1 element selected from Al, si, ga, in and Sc,
x contains more than 1 element selected from F, cl, br and I,
re contains 1 or more elements selected from Eu, ce, pr, tb and Dy,
a. b, c, d, e, x satisfy the following formulas, respectively.
0.7≤a≤1.3
0.7≤b≤1.3
2.4≤c≤3.6
3.2≤d≤4.8
0.0≤e≤0.2
0.0＜x≤0.2)
In the formula [1], europium (Eu), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb) and the like can be used as Re, re preferably contains 1 or more elements selected from Eu, ce, pr, tb and Dy, more preferably Eu, further preferably 80 mol% or more of Re is Eu, and still further preferably Re is Eu from the viewpoint of improving the emission wavelength and the emission quantum efficiency.
In the formula [1], MA contains 1 or more elements selected from calcium (Ca), strontium (Sr), barium (Ba), sodium (Na), potassium (K), yttrium (Y), gadolinium (Gd) and lanthanum (La), preferably contains 1 or more elements selected from Ca, sr and Ba, and more preferably MA contains Sr. It is preferable that at least 80 mol% of MA be composed of the above-mentioned preferable elements, and more preferable that MA be composed of the above-mentioned preferable elements.
In the formula [1], MB contains 1 or more elements selected from lithium (Li), magnesium (Mg) and zinc (Zn), preferably contains Li, more preferably 80 mol% or more of MB is Li, and still more preferably MB is Li.
In the formula [1], MC contains 1 or more elements selected from aluminum (Al), silicon (Si), gallium (Ga), indium (In) and scandium (Sc), preferably contains Al, ga or Si, more preferably contains 1 or more elements selected from Al and Ga, still more preferably 80 mol% or more of MC is composed of 1 or more elements selected from Al and Ga, particularly preferably 90 mol% or more of MC is composed of 1 or more elements selected from Al and Ga, and most preferably MC is composed of 1 or more elements selected from Al and Ga.
In one embodiment, 80 mol% or more of MC is Al, preferably 90 mol% or more, more preferably 95 mol% or more, and still more preferably 98 mol% or more. By setting 80 mol% or more of MC to Al, a red phosphor exhibiting a light emission peak wavelength and a light emission intensity equivalent to those of a conventional red phosphor such as S/CASN and having a narrow spectral half-width can be provided, and by using such a red phosphor, a light-emitting device having excellent color rendering properties and color reproducibility while maintaining conversion efficiency (Conversion Efficiensy, lm/W) equivalent to or higher than conventional ones can be provided.
In the formula [1], N represents nitrogen. In order to maintain charge balance of the entire crystal phase or to adjust the emission peak wavelength, a part of N may be substituted with oxygen (O).
In the formula [1], X contains 1 or more elements selected from fluorine (F), chlorine (Cl), bromine (Br) and iodine (I). That is, in a specific embodiment, from the viewpoint of maintaining the stabilization of the crystal structure and the charge balance of the entire phosphor, a part of N may be substituted with the above halogen element represented by X.
The above formula [1] includes the case where a component other than the one described in detail is inevitably contained in a trace amount without intentionally containing or from a trace amount of an additive component or the like.
Examples of the other components than those specifically described include an element having an atomic number different from that of the intentionally added element, a homogeneous element of the intentionally added element, a rare earth element different from that of the intentionally added rare earth element, a halogen element when a halide is used as a Re raw material, and elements which can be generally contained as impurities in various raw materials.
As a case where a component other than the one explicitly described is inevitably or unintentionally contained, for example, a case where a source of raw material impurities and a case where the raw material impurities are introduced in a manufacturing process such as a pulverizing process or a synthesizing process are conceivable. The trace amount of the additive component includes a reaction auxiliary agent, a Re raw material, and the like.
In the above formula [1], a, b, c, d, e, x represents the molar contents of MA, MB, MC, N, X and Re contained in the phosphor, respectively.
The value of a is usually 0.6 or more, preferably 0.7 or more, more preferably 0.8 or more, further preferably 0.9 or more, usually 1.4 or less, preferably 1.3 or less, further preferably 1.2 or less, further preferably 1.1 or less.
The value of b is usually 0.6 or more, preferably 0.7 or more, more preferably 0.8 or more, further preferably 0.9 or more, usually 1.4 or less, preferably 1.3 or less, further preferably 1.2 or less, further preferably 1.1 or less.
The value of c is usually 2.1 or more, preferably 2.4 or more, more preferably 2.6 or more, further preferably 2.8 or more, usually 3.9 or less, preferably 3.6 or less, further preferably 3.4 or less, further preferably 3.2 or less.
The value of d is usually 3 or more, preferably 3.2 or more, more preferably 3.4 or more, still more preferably 3.6 or more, still more preferably 3.8 or more, usually 5 or less, preferably 4.8 or less, still more preferably 4.6 or less, still more preferably 4.4 or less, still more preferably 4.2 or less.
The value of e is not particularly limited, but is usually not less than 0, usually not more than 0.2, preferably not more than 0.1, more preferably not more than 0.06, still more preferably not more than 0.04, still more preferably not more than 0.02.
The value of x is usually greater than 0, preferably 0.0001 or more, more preferably 0.001 or more, usually 0.2 or less, preferably 0.15 or less, more preferably 0.12 or less, further preferably 0.1 or less, further preferably 0.08 or less. When the value of x is equal to or greater than the lower limit, a phosphor having a favorable luminescence intensity can be obtained, and when the value of x is equal to or less than the upper limit, a phosphor having Re well incorporated into a crystal and easily functioning as a luminescence center can be obtained.
The crystal structure was stabilized by b, c, d, e in the above range. The values of d and e can be appropriately adjusted to maintain the charge balance of the entire phosphor.
Further, a phosphor having a stabilized crystal structure and less hetero-phase is obtained by the value of a in the above range.
The value of b+c is usually 3.1 or more, preferably 3.4 or more, more preferably 3.7 or more, usually 4.9 or less, preferably 4.6 or less, more preferably 4.3 or less.
The value of b+c stabilizes the crystal structure in the above range.
The value of d+e is usually 3.2 or more, preferably 3.4 or more, more preferably 3.7 or more, usually 5.0 or less, preferably 4.6 or less, more preferably 4.3 or less.
The crystal structure is stabilized by the value of d+e in the above range.
In any of the above ranges, the emission peak wavelength and the half-width of the emission spectrum of the obtained phosphor are preferable.
The method for determining the elemental composition of the phosphor is not particularly limited, and may be determined by a usual method, and may be determined by GD-MS, ICP spectrometry, energy dispersive X-ray spectrometry (EDX), or the like.
In one embodiment, the present invention is a phosphor (hereinafter, sometimes referred to as "phosphor [2] of the present embodiment") that contains a crystal phase having a composition represented by the following formula [2] and has a minimum value of 20% or more in a wavelength region from a light emission peak wavelength to 800 nm.
In another embodiment, the present invention is a light-emitting device including the phosphor [2] of the present embodiment.
Re x MA a MB b (MC’ 1－y MD y ) c N d X e [2]
(in the above-mentioned formula [2],
MA contains more than 1 element selected from Sr, ca, ba, na, K, Y, gd and La,
MB contains 1 or more elements selected from Li, mg and Zn,
MC' is Al, and the metal is selected from the group consisting of aluminum,
MD contains 1 or more elements selected from Si, ga, in and Sc,
x contains more than 1 element selected from F, cl, br and I,
Re contains 1 or more elements selected from Eu, ce, pr, tb and Dy,
a. b, c, d, e, x, y satisfy the following formulas, respectively.
0.7≤a≤1.3
0.7≤b≤1.3
2.4≤c≤3.6
3.2≤d≤4.8
0.0≤e≤0.2
0.0＜x≤0.2
0.0＜y≤1.0)
The type and composition of the element MA, MB, N, X, re in the above formula [2] may be the same as those in the above formula [1 ].
The MC' is Al.
The MD contains 1 or more elements selected from Si, ga, in, and Sc, and preferably contains 1 or more elements selected from Ga and Si, more preferably contains Ga, from the viewpoint of improving crystal stability and luminous intensity.
In a further preferred specific embodiment, 80 mol% or more of MD is Ga, and MD may be constituted by Ga.
The values and preferable ranges of a, b, c, d, e and x in the above formula [2] may be the same as those of the above formula [1 ].
The value of y in the above formula [2] is usually 0.01 or more, preferably 0.015 or more, more preferably 0.03 or more, still more preferably 0.05 or more, particularly preferably 0.10 or more, usually 1.00 or less, preferably 0.70 or less, more preferably 0.50 or less, still more preferably 0.30 or less, particularly preferably 0.25 or less.
When y is equal to or higher than the lower limit, the emission peak wavelength of the phosphor is reduced to a shorter wavelength, and by using such a phosphor, a light-emitting device having excellent color rendering properties or color reproducibility can be provided. Further, when the value of y is equal to or less than the upper limit, a phosphor having a good emission intensity can be obtained, and by using such a phosphor, a light-emitting device having good conversion efficiency can be provided. The value of y can be appropriately adjusted in order to obtain the emission intensity and emission peak wavelength preferable according to the purpose.
[ particle diameter of crystalline phase ]
The particle diameter of the crystal phase of the phosphor of the present embodiment is usually 2 μm to 35 μm in terms of the volume-based central particle diameter (volume median particle diameter), the lower limit is preferably 3 μm, more preferably 4 μm, further preferably 5 μm, and the upper limit is preferably 30 μm or less, more preferably 25 μm or less, further preferably 20 μm, particularly preferably 15 μm.
The volume-based central particle diameter (volume median particle diameter) is preferably not less than the above lower limit because the emission characteristics of the crystal phase in the LED package are improved, and is preferably not more than the above upper limit because the crystal phase can avoid clogging of the nozzle in the manufacturing process of the LED package.
The volume-based central particle diameter (volume median diameter) of the crystal phase of the phosphor can be measured by measurement techniques known to those skilled in the art, and in a preferred embodiment, can be measured by, for example, a laser particle sizer. In the examples of the present specification, the volume-based median particle diameter (volume median particle diameter, (d) 50 ) A particle size of 50% relative particle size based on volume when the particle size distribution (cumulative distribution) is obtained by measuring a sample using a particle size distribution measuring apparatus based on a laser diffraction scattering method.
{ physical Properties of phosphor, etc })
[ space group ]
The crystal system (space group) in the phosphor of the present embodiment is more preferably P-1. The SPACE GROUP in the phosphor of the present embodiment is not particularly limited as long as the average structure obtained by statistical study in the range in which distinction can be made by X-ray powder diffraction or single crystal X-ray diffraction shows the repetition period of the above-described length, and is preferably based on "International Tables for Crystallography (Third, observed edition)" and belongs to the SPACE GROUP of the 2 nd kind.
A phosphor having a narrow full width at half maximum (FWHM) of the emission spectrum and excellent emission efficiency is obtained by the above-mentioned space group.
The space group can be obtained by a conventional method, and can be obtained by, for example, analysis using electron diffraction, X-ray diffraction structure analysis of powder or single crystal, neutron diffraction structure analysis, or the like.
In the X-ray powder diffraction spectrum of the phosphor of the present embodiment, if the intensity of the peak occurring in the 2θ=38 to 39 degrees region is Ix, the intensity of the peak occurring in the 2θ=37 to 38 degrees region is Iy, and Iy is 1, the relative intensity of Ix, that is, ix/Iy is preferably 0.140 or less, more preferably 0.120 or less, still more preferably 0.110 or less, still more preferably 0.080 or less, particularly preferably 0.060 or less, particularly preferably 0.040 or less, and in addition, usually 0 or more, the smaller is more preferable.
The peak in the region of 2θ=37 to 38 degrees is one of characteristic peaks observed when the crystal system (space group) is P-1, and a phosphor having a higher phase purity of P-1 can be obtained by making Iy relatively high. If Ix/Iy is equal to or less than the upper limit, a phosphor having a high phase purity and a narrow full width at half maximum (FWHM) of the emission spectrum can be obtained, and thus the emission efficiency of the light-emitting device can be improved.
[ reflectivity in a specific wavelength region ]
In one embodiment, the minimum value of the reflectance (hereinafter, also referred to as a%) of the phosphor of the present embodiment in a predetermined wavelength region, which is a region of the phosphor having a light emission peak wavelength of 800nm, is usually 20% or more. The minimum value of the reflectance is preferably 25% or more, more preferably 30% or more, further preferably 35% or more, particularly preferably 50% or more, even more preferably 60% or more, and most preferably 70% or more.
The upper limit of the reflectance is not particularly limited, but is preferably 100% or less as the reflectance increases. By using a red phosphor having a reflectance of not less than the lower limit, which provides excellent light emission intensity and quantum efficiency, a light-emitting device having excellent conversion efficiency can be provided.
In one embodiment, the predetermined wavelength region of the reflectance a (%) of the phosphor of the present embodiment is a wavelength region of from the emission peak wavelength to 800 nm. The reason why the wavelength region is selected when the reflectance of the phosphor according to the present embodiment is specified will be described below.
The present inventors have found the following findings;
1. when a part of the phosphor having the crystal phase represented by the above formula [1] or [2] is visually confirmed under natural light in an unexcited state, the phosphor appears to be slightly gray in color. In this specification, this state is also sometimes expressed as "dark" or with "darkness".
2. The phosphor having the crystal phase represented by the above formula [1] or [2] is excellent in light emission intensity or quantum efficiency of the phosphor having less "darkness", and by using such a phosphor, a light-emitting device having excellent conversion efficiency can be provided.
3. Among the phosphors having the crystal phase represented by the above formula [1] or [2], the phosphor having less "darkness" tends to have a high reflectance as a whole, and in particular, can be accurately determined by defining the reflectance of light in a specific wavelength region or by defining an index including the reflectance of light in the specific wavelength region.
The specific wavelength region preferably belongs to a wavelength region different from a wavelength region in which an excitation spectrum is generally present.
From one aspect, the specific wavelength region is preferably a wavelength region having a wavelength equal to or higher than the emission peak wavelength and equal to or lower than the end of the emission spectrum on the long wavelength side.
In a specific embodiment, the specific wavelength region may be a wavelength of usually from a peak emission wavelength to 900nm, and the upper limit is preferably 800nm or less, more preferably 780nm or less. The wavelength region may be any of the above lower limit to upper limit as needed.
The wavelength region of the fluorescence of the present embodiment in which the excitation spectrum exists is mainly 300nm to 520nm, but absorption may occur around 600 nm. Here, when the reflectance of the wavelength in the wavelength region where the excitation spectrum exists is measured, the phosphor absorbs the incident light, and the reflectance is affected by the absorptance, so that it is not appropriate to specify the body color of the phosphor by only the reflectance of the wavelength in the wavelength region where the excitation spectrum exists.
From the above point of view, when the phosphor of the present embodiment is specified by reflectance, the body color of the phosphor can be accurately specified by using the reflectance in the above-described wavelength region in which the influence of absorption of the phosphor is small or by using an index related to the reflectance of an individual.
In one embodiment, when the minimum value of the reflectance in the wavelength region of emission peak wavelengths Wp (nm) to [ Wp-50] (nm) is set to B%, the value of the difference [ a-B ] from the reflectance a (%) is preferably-1.5 or more, more preferably 0.0 or more, still more preferably 3.0 or more, and particularly preferably 4.0 or more. The upper limit of [ A-B ] is not particularly limited, and is usually 50.0 points or less.
When the value of [ A-B ] is not less than the lower limit, a phosphor having high emission intensity can be obtained, and by using such a phosphor, a light-emitting device having high conversion efficiency can be provided.
The reason why the phosphor having a high emission intensity is obtained by making the value of [ A-B ] high is not clear, but for example, it is considered that since there is no absorption of light by Re element (activator element) in a wavelength region equal to or higher than the emission peak wavelength of the reflectance A (%), it is preferable that the absorption rate is low and the reflectance is high, and on the other hand, the reflectance B (%) reflects the absorption of light by Re element (activator element) and the higher the absorption rate is, the lower the reflectance is, and the higher the value of [ A-B ] is, the higher the absorption of light contributing to emission by the activator element is, and therefore the phosphor having a high emission intensity can be obtained. In this case, it is considered that the above-mentioned reflectance a (%) and B (%) are continuous in wavelength region, and therefore a (%) and B (%) are highly likely to be relatively close to each other, and as a result, it is preferable to define by comparing a (%) with B (%) without using B (%) alone.
In one embodiment, when the minimum value of the reflectance in the wavelength region of 400nm to 550nm is C%, the difference [ a-C ] between the reflectance a (%) and the value of the above-mentioned reflectance is preferably 0.0 point or more, more preferably 2.0 point or more, still more preferably 5.0 point or more, particularly preferably 10.0 point or more, even more preferably 15.0 point or more, and most preferably 20.0 point or more. The upper limit of [ A-C ] is not particularly limited, and is usually 50.0 points or less.
When the value of [ A-C ] is not less than the lower limit, a phosphor having high emission intensity can be obtained, and by using such a phosphor, a light-emitting device having high conversion efficiency can be provided.
In one embodiment, the phosphor of the present embodiment preferably has a ratio C/a of the reflectance a (%) to the reflectance a of 1.05 or less, more preferably 1.00 or less, still more preferably 0.90 or less, particularly preferably 0.80 or less, and even more preferably 0.75 or less, when the minimum value of the reflectance in the wavelength region of 400nm to 550nm is C%. The lower limit of C/A is not particularly limited, but is usually 0.0 or more.
When the value of C/a is equal to or less than the upper limit, a phosphor having high emission intensity can be obtained, and when such a phosphor is used, a light-emitting device having high conversion efficiency can be provided.
The reason why the phosphor having a high emission intensity is obtained by the larger value of [ A-C ] or the smaller value of C/A is not clear, but for example, it is considered that the absorption of light contributing to emission is hardly present in a wavelength region having a reflectance of not less than the emission peak wavelength of A%, and therefore the absorption rate is preferably low and the reflectance is high, and on the other hand, the wavelength region having a reflectance of C (%) is a wavelength region in which blue light is used as a majority of excitation light sources, and the higher the absorption rate is, the lower the reflectance is, and the absorption of excitation light contributing to emission by the phosphor having a reflectance of C (%) is high, and therefore the phosphor having a high emission intensity can be obtained.
As can be seen from examples described later, since a phosphor having a large absorption that does not contribute to light emission due to impurities or the like is considered to have a tendency to decrease reflectance generally in a wide wavelength range, it is preferable that the phosphor is specified by comparing a (%) with C (%) not only with C (%) when the phosphor is specified at the above-described angle.
[ Property of luminescence Spectrum ]
The phosphor of the present embodiment is excited by irradiation with light having an appropriate wavelength, and emits red light having a favorable emission peak wavelength and spectral full width at half maximum (FWHM) in the emission spectrum. The emission spectrum, the excitation wavelength, the emission peak wavelength, and the spectral full width at half maximum (FWHM) are described below.
(excitation wavelength)
The phosphor of the present embodiment has an excitation peak in a wavelength range of usually 270nm or more, preferably 300nm or more, more preferably 320nm or more, still more preferably 350nm or more, particularly preferably 400nm or more, and further usually 500nm or less, preferably 480nm or less, more preferably 460nm or less. I.e. excited by light from the near ultraviolet to the blue region.
The shape of the emission spectrum, and the description of the emission peak wavelength and the spectral half-width described below can be applied independently of the excitation wavelength, but from the viewpoint of improving the quantum efficiency, it is preferable to irradiate light having a wavelength in the above-described range where the absorption and excitation efficiency is good.
(luminescence peak wavelength)
The peak wavelength in the emission spectrum of the phosphor of the present embodiment is usually 620nm or more, preferably 625nm or more, and more preferably 630nm or more. The peak wavelength in the light emission spectrum is usually 670nm or less, preferably 660nm or less, and more preferably 655nm or less.
The peak wavelength in the emission spectrum of the phosphor is in the above range, and the emission color is preferably red, and the use of the phosphor can provide a light-emitting device having excellent color rendering properties or color reproducibility. Further, when the peak wavelength in the emission spectrum of the phosphor is equal to or less than the upper limit, a light-emitting device having excellent red visual acuity and excellent lumen equivalent lm/W can be provided.
The light-emitting device may use phosphors having different peak wavelengths depending on the application. The method for obtaining phosphors having different peak wavelengths is not particularly limited, and 1 method can be realized by changing the composition of the MC element.
In one embodiment, a phosphor having a long emission peak wavelength can be obtained by using Al for MC in the above formula [1] and increasing the ratio of Al. In this embodiment, the emission peak wavelength is preferably 640nm or more, more preferably 645nm or more, and generally 670nm or less, preferably 660nm or less. By providing a phosphor having an emission wavelength in this range, for example, a light-emitting device having both of light-emitting efficiency and color rendering properties can be provided as a light-emitting device for illumination use, or a light-emitting device having both of light-emitting efficiency and color reproduction range as a light-emitting device for use in a backlight unit of a liquid crystal display.
In another embodiment, a phosphor having a relatively short emission peak wavelength can be obtained by providing a phosphor including a crystal phase having a composition represented by the above formula [2] using MC' (Al) and MD elements. In this embodiment, the emission peak wavelength is usually 615nm or more, preferably 620nm or more, more preferably 625nm or more, further preferably 630nm or more, usually 660nm or less, preferably 645nm or less, further preferably 640nm or less. By providing a phosphor having an emission wavelength in the above range, a light-emitting device having excellent color rendering properties or color reproducibility can be obtained.
(half-peak width of luminescence spectrum)
The half-width of the luminescence spectrum of the phosphor of the present embodiment is usually 80nm or less, preferably 70nm or less, more preferably 60nm or less, further preferably 55nm or less, particularly preferably 50nm or less, and further usually 10nm or more.
By using a phosphor having a half-width of the emission spectrum within the above range, the color reproduction range can be enlarged without deteriorating the color purity in an image display device such as a liquid crystal display.
Further, when the emission peak wavelength and the spectral half-width are equal to or less than the upper limit, a phosphor having relatively high visual acuity in the emission wavelength region can be provided, and when such a phosphor is used in a light-emitting device, a light-emitting device having high conversion efficiency can be provided.
In order to excite the phosphor with light having a wavelength of around 450nm, for example, a GaN-based LED may be used. The measurement of the emission spectrum of the phosphor and the calculation of the emission peak wavelength, peak relative intensity, and spectral half-width thereof can be performed using, for example, a commercially available light source having an emission wavelength of 300 to 400nm such as a commercially available xenon lamp, a commercially available spectrum measuring device such as a fluorescence measuring device having a general photodetector, and the like.
Method for producing phosphor
The phosphor of the present embodiment can be synthesized by mixing and heating raw materials of each element constituting the phosphor so that the ratio of each element satisfies the above formula [1] or [2 ].
[ raw materials ]
The raw materials of the respective elements (MA, MB, MC, MC', MD, re) are not particularly limited, and examples thereof include simple substances, oxides, nitrides, hydroxides, chlorides, fluorides and other halides, sulfates, nitrates, phosphates and other inorganic salts, acetates and other organic acid salts, and the like. In addition, a compound containing 2 or more kinds of the above-described element groups may be used. In addition, each compound may be a hydrate or the like.
In the examples described below, sr was used 3 N 2 、Li 3 N, alN, gaN and EuF 3 Or Eu 2 O 3 As starting material.
The method for obtaining each raw material is not particularly limited, and commercially available raw materials can be purchased and used.
The purity of each raw material is not particularly limited, but from the standpoint of ensuring accurate elemental ratios and avoiding heterogeneous phases due to impurities, the higher the purity, the more preferable the purity is, usually 90 mol% or more, preferably 95 mol% or more, more preferably 97 mol% or more, still more preferably 99 mol% or more, and the upper limit is not particularly limited, usually 100 mol% or less, and the impurities inevitably mixed may be contained.
In the examples described below, raw materials having a purity of 95 mol% or more were used.
The oxygen element (O), the nitrogen element (N), and the halogen element (X) may be supplied by using oxides, nitrides, halides, or the like as raw materials of the respective elements, or may be appropriately contained in an atmosphere containing oxygen or nitrogen at the time of the synthesis reaction.
[ mixing procedure ]
The mixing method of the raw materials is not particularly limited, and a conventional method may be used. For example, the phosphor raw materials are weighed so as to obtain a target composition, and sufficiently mixed using a ball mill or the like to obtain a phosphor raw material mixture. The mixing method is not particularly limited, and specifically, the following methods (a) and (b) are exemplified.
(a) A dry mixing method in which the above-described phosphor raw materials are pulverized and mixed by a combination of pulverization using a dry pulverizer such as a hammer mill, a roller mill, a ball mill, or a jet mill, or a mortar and pestle, and a mixing machine such as a screw mixer, a V-type mixer, or a henschel mixer, or a mixture of a mortar and pestle.
(b) The above-mentioned phosphor raw material is mixed with a solvent or dispersion medium such as water, for example, using a pulverizer, mortar and pestle, or an evaporation pan and stirring bar, to prepare a solution or slurry, and then dried by spray drying, heat drying, natural drying, or the like.
The mixing of the phosphor raw materials may be performed by either the dry mixing method or the wet mixing method, and in order to avoid contamination of the phosphor raw materials by moisture, the dry mixing method or the wet mixing method using a water-insoluble solvent is preferably used.
The method (a) is used in the examples described below.
[ heating Process ]
In the heating step, for example, the phosphor raw material mixture obtained in the mixing step is placed in a crucible, and then heated at a temperature of 500 to 1200 ℃, preferably 600 to 1000 ℃, more preferably 700 to 950 ℃.
The material of the crucible is preferably a material that does not react with the phosphor raw material or the reactant, and examples thereof include ceramics such as alumina, quartz, boron nitride, silicon carbide, and silicon nitride, metals such as nickel, platinum, molybdenum, tungsten, tantalum, niobium, iridium, and rhodium, and alloys containing these metals as main components.
In the examples described below, a crucible made of boron nitride was used.
The heating is preferably performed in an inert atmosphere, and a gas containing nitrogen, argon, helium, or the like as a main component can be used.
In the examples described below, heating was performed under a nitrogen atmosphere.
In the heating step, the heating is performed in the above-mentioned temperature range for usually 10 minutes to 200 hours, preferably 1 hour to 100 hours, more preferably 3 to 50 hours. The heating step may be performed 1 time or may be performed several times. Examples of the method of dividing the process into a plurality of steps include a method of performing an annealing step of heating under pressure to repair defects, a method of performing a secondary heating after a primary heating to obtain primary particles or an intermediate, and a method of performing a secondary heating to obtain secondary particles or a final product.
Thus, the phosphor of the present embodiment was obtained.
[ selection of fluorescent Material ]
Although the phosphor of the present embodiment is obtained by the above method, there are cases where the obtained phosphor contains particles slightly deviating from the essential range of the present embodiment in a part due to minute differences in minute attachments in the reaction vessel, impurities of each reagent, batches of each raw material reagent, and the like, and besides, there are cases where a phosphor having a large particle diameter is mixed with a phosphor having a small particle diameter, a phosphor having a different reflectance, and the like.
Therefore, for example, by manufacturing a phosphor by changing a plurality of conditions, sorting the obtained phosphor by classification, washing, or the like, and analyzing reflectance, XRD spectrum, or the like to sort out a phosphor satisfying the requirements of the present embodiment, the phosphor of the above embodiment can be reliably obtained.
< light emitting device >
In one embodiment, the present invention is a light-emitting device including a 1 st light-emitting body (excitation light source) and a 2 nd light-emitting body that emits visible light by irradiation with light from the 1 st light-emitting body, and is a light-emitting device including the present embodiment of the present invention including a crystal phase having a composition represented by the above formula [1] or [2] as the 2 nd light-emitting body. Here, the 2 nd light-emitting body may be used alone in 1 kind, or may be used in combination of 2 or more kinds in any combination and ratio.
In addition to the phosphor of the present embodiment including a crystal phase having a composition represented by the above formula [1] or [2], the light-emitting device of the present embodiment may further use a phosphor that emits fluorescence in a yellow, green, or red region (orange or red) under irradiation with light from an excitation light source as the 2 nd light-emitting body.
In a specific embodiment, the light-emitting device of the present invention is a light-emitting device further comprising a yellow phosphor and/or a green phosphor, the phosphor comprising a crystal phase having a composition represented by the above formula [1] or [2 ].
Specifically, when the light-emitting device is configured, the yellow phosphor preferably has a light emission peak in a wavelength range of 550nm to 600nm, and the green phosphor preferably has a light emission peak in a wavelength range of 500nm to 560 nm. The orange or red phosphor has a light emission peak in a wavelength range of usually 615nm or more, preferably 620nm or more, more preferably 625nm or more, still more preferably 630nm or more, usually 660nm or less, preferably 650nm or less, more preferably 645nm or less, still more preferably 640nm or less.
By appropriately combining the phosphors in the above wavelength region, a light-emitting device exhibiting excellent color reproducibility can be provided. The excitation light source may be an excitation light source having an emission peak in a wavelength range of less than 420 nm.
Hereinafter, a description will be given of a light-emitting device in which a phosphor of the present embodiment having a light-emitting peak in a wavelength range of 620nm to 660nm and including a crystal phase having a composition represented by the above formula [1] or [2] is used as a red phosphor, and a light-emitting material having a light-emitting peak in a wavelength range of 300nm to 460nm is used as a 1 st phosphor, but the present embodiment is not limited thereto.
In the above case, the light-emitting device of the present embodiment may be, for example, the following (a), (B), or (C).
(A) A mode in which a light-emitting material having a light-emitting peak in a wavelength range of 300nm to 460nm is used as the 1 st light-emitting body, and at least 1 kind of phosphor (yellow phosphor) having a light-emitting peak in a wavelength range of 550nm to 600nm and the phosphor of the present embodiment including a crystal phase having a composition represented by [1] or [2] above are used as the 2 nd light-emitting body.
(B) A mode in which a light-emitting material having a light-emitting peak in a wavelength range of 300nm to 460nm is used as the 1 st light-emitting body, and at least 1 kind of phosphor (green phosphor) having a light-emitting peak in a wavelength range of 500nm to 560nm and the phosphor of the present embodiment including a crystal phase having the composition represented by [1] or [2] above are used as the 2 nd light-emitting body.
(C) As the 1 st light-emitting body, a light-emitting material having a light-emitting peak in a wavelength range of 300nm to 460nm is used, and as the 2 nd light-emitting body, at least 1 type of light-emitting body (yellow light-emitting body) having a light-emitting peak in a wavelength range of 550nm to 600nm, at least 1 type of light-emitting body (green light-emitting body) having a light-emitting peak in a wavelength range of 500nm to 560nm, and the light-emitting body of the present embodiment including a crystal phase having a composition represented by [1] or [2] above are used.
As the green or yellow phosphor in the above embodiment, a commercially available phosphor can be used, and for example, garnet-based phosphor, silicate-based phosphor, nitride phosphor, oxynitride phosphor, or the like can be used.
(yellow phosphor)
Examples of garnet-based phosphors that can be used as the yellow phosphor include (Y, gd, lu, tb, la) 3 (Al，Ga) 5 O 12 Examples of silicate-based phosphors include (Ba, sr, ca, mg) 2 SiO 4 (Eu, ce) examples of the nitride phosphor and oxynitride phosphor include (Ba, ca, mg) Si 2 O 2 N 2 Eu (SION-based phosphor), (Li, ca) 2 (Si，Al) 12 (O，N) 16 (Ce, eu) (alpha-sialon phosphor), (Ca, sr) AlSi 4 (O，N) 7 (Ce, eu) (1147 phosphor), (La, ca, Y, gd) 3 (Al，Si) 6 N 11 (Ce, eu) (LSN phosphor), etc.
These may be used alone or in combination of 1 or more than 2.
Among the above-mentioned phosphors, garnet-based phosphors are preferable as yellow phosphors, and among them, Y is most preferable 3 Al 5 O 12 Ce represents a YAG phosphor.
(Green phosphor)
Examples of garnet-based phosphors that can be used as the green phosphor include (Y, gd, lu, tb, la) 3 (Al，Ga) 5 O 12 :(Ce，Eu，Nd)、Ca 3 (Sc，Mg) 2 Si 3 O 12 (Ce, eu) (CSMS phosphor), examples of silicate phosphors include (Ba, sr, ca, mg) 3 SiO 10 :(Eu，Ce)、(Ba，Sr，Ca，Mg) 2 SiO 4 (Ce, eu) (BSS phosphor), examples of oxide phosphor include (Ca, sr, ba, mg) (Sc, zn) 2 O 4 (Ce, eu) (CASO phosphor), examples of the nitride phosphor and oxynitride phosphor include (Ba, sr, ca, mg) Si 2 O 2 N 2 :(Eu，Ce)、Si 6－z Al z O z N 8－z Eu, ce (beta-sialon phosphor) (0 < z.ltoreq.1), (Ba, sr, ca, mg, la) 3 (Si，Al) 6 O 12 N 2 (Eu, ce) (BSON phosphor) as aluminate phosphor,for example, (Ba, sr, ca, mg) 2 Al 10 O 17 Eu, mn (GBAM-based phosphor), and the like.
These may be used alone or in combination of 1 or more than 2.
(Red phosphor)
As the red phosphor, the phosphor of the present embodiment including the crystal phase having the composition represented by the above formula [1] or [2] is used, but other orange or red phosphors such as Mn-activated fluoride phosphor, garnet-based phosphor, sulfide phosphor, nanoparticle phosphor, nitride phosphor, oxynitride phosphor, and the like may be used in addition to the phosphor of the present embodiment. As the other orange or red phosphor, for example, the following phosphors can be used.
As the Mn-activated fluoride phosphor, for example, K 2 (Si，Ti)F 6 :Mn、K 2 Si 1－x Na x Al x F 6 Mn (0 < x < 1) (collectively referred to as KSF phosphor), examples of sulfide phosphors include (Sr, ca) S: eu (CAS phosphor), la 2 O 2 Examples of the Eu (LOS phosphor) include (Y, lu, gd, tb) 3 Mg 2 AlSi 2 O 12 Ce, cdSe, or (Sr, ca) AlSiN, for example, can be used as nanoparticles, and nitride or oxynitride phosphors, for example 3 Eu (S/CASN phosphor), (CaAlSiN) 3 ) 1－x ·(SiO 2 N 2 ) x Eu (CASON phosphor), (La, ca) 3 (Al，Si) 6 N 11 Eu (LSN phosphor), (Ca, sr, ba) 2 Si 5 (N，O) 8 Eu (258 phosphor), (Sr, ca) Al 1+x Si 4－x O x N 7－x Eu (1147 phosphor), M x (Si，Al) 12 (O，N) 16 Eu (M is Ca, sr, etc.) (alpha sialon phosphor), li (Sr, ba) Al 3 N 4 Eu (x is 0 < x < 1), etc.
These may be used alone or in combination of 1 or more than 2.
[ constitution of light-emitting device ]
The light-emitting device of the present embodiment may include the 1 st light-emitting body (excitation light source) and at least the phosphor of the present embodiment including the crystal phase having the composition represented by the above formula [1] or [2] may be used as the 2 nd light-emitting body, and the constitution thereof is not limited and may be arbitrarily constituted by a known device.
As an embodiment of the device configuration and the light-emitting device, for example, an embodiment described in japanese patent application laid-open No. 2007-29352 is given. Examples of the form of the light emitting device include a shell, a cup, a chip on a board, and a remote phosphor.
{ use of light-emitting device }
The use of the light-emitting device is not particularly limited, and the light-emitting device can be used in various fields in which the light-emitting device is generally used, and among them, the light-emitting device having high color rendering properties can be particularly suitably used as a light source for an illumination device and an image display device.
Further, a light-emitting device including a red phosphor having a good emission wavelength can be used also for a red vehicle display lamp or a vehicle display lamp including white light of the red color.
Lighting device
In one embodiment, the present invention may be a lighting device including the light-emitting device as a light source.
When the light-emitting device is used as a lighting device, the specific configuration of the lighting device is not limited, and the light-emitting device described above may be appropriately incorporated into a known lighting device for use. For example, a surface-emission lighting device in which a plurality of light-emitting devices are arranged on the bottom surface of the holding case is exemplified.
[ image display device ]
In one embodiment, the present invention may be an image display device including the light emitting device as a light source.
When the light-emitting device is used as a light source of an image display device, the specific configuration of the image display device is not limited, and it is preferable to use the light-emitting device together with a color filter. For example, when a color image display device using a color liquid crystal display element is manufactured as an image display device, the image display device may be formed by combining a light shutter using liquid crystal with a color filter having red, green, and blue pixels using the light emitting device as a backlight.
Display lamp for vehicle
In one embodiment, the present invention may be a vehicle display lamp including the light emitting device.
In a specific embodiment, the light-emitting device used in the vehicle display lamp is preferably a light-emitting device that emits white light. The light emitting device that emits white light preferably has a deviation duv (also referred to as Δuv) between the color of light emitted from the light emitting device and the blackbody radiation locus of-0.0200 to 0.0200 and a color temperature of 5000K to 30000K.
In a specific embodiment, the light-emitting device used in the vehicle display lamp is preferably a light-emitting device that emits red light. In this embodiment, for example, the light emitting device may absorb blue light emitted from the blue LED chip and emit red light as a vehicle display lamp of red light.
The display lamp for a vehicle includes a headlight, a marker lamp, a back taillight, a signal lamp, a brake lamp, a fog lamp, and the like of the vehicle, and the illumination of the vehicle is provided for the purpose of displaying any other vehicle, pedestrian, and the like.
Examples
Hereinafter, embodiments of the present invention will be described with reference to examples, but the present invention is not limited to the following without departing from the gist thereof.
{ measurement method }
[ X-ray powder diffraction measurement ]
X-ray powder diffraction (XRD) was precisely measured by an X-ray powder diffraction apparatus SmartLab 3 (manufactured by Rigaku Co., ltd.).
The measurement conditions were as follows.
Using CuK alpha tube balls
X-ray power = 45kv,200ma
Diffusion slit = auto
Detector=one-dimensional high-speed X-ray detector (D/teX Ultra 250)
Scan range 2θ=5 to 95 degrees
Read width = 0.02 degrees
[ measurement of reflectivity ]
The spectral reflectance curve was measured by an ultraviolet-visible spectrophotometer (manufactured by Japanese Spectroscopy Co., ltd., V-560) under the following measurement conditions. For the reflectance, a standard reflection plate (spectrum standard reflection plate manufactured by labsphere corporation) made of PTFE processed with a foaming resin was set to 100%, and the minimum value of the reflectance in the wavelength region of the light emission peak wavelength to 800nm was obtained.
Light source deuterium discharge tube (190-350 nm)
Tungsten-iodine lamp (330-900 nm)
The measurement wavelength range is 200-800 nm
Measurement Interval 0.5nm
[ measurement of luminescence Spectrum ]
The luminescence spectrum was measured by a fluorescence spectrophotometer F-4500 (manufactured by Hitachi High Technology Co.) under the following measurement conditions.
Xenon lamp as light source
Excitation wavelength of 455nm
The measurement wavelength range is 200-800 nm
Measurement Interval 0.2nm
[ measurement of Quantum efficiency ]
The quantum efficiency was measured by a quantum efficiency measuring system QE-2100 (manufactured by Ohtsuka Electronics Co.) under the following measurement conditions.
Xenon lamp as light source
Excitation wavelength of 455nm
The measurement wavelength range is 200-850 nm
Measurement Interval 0.5nm
< evaluation of characteristics of phosphor >
A red phosphor (examples 1 to 2) corresponding to the phosphor of the present embodiment including a crystal phase having the composition represented by the above formula [1] or [2] was prepared by manufacturing a phosphor according to the above method for manufacturing a phosphor, measuring an emission spectrum and a reflectance, and then selecting a phosphor having a minimum value of the reflectance in a wavelength region of an emission peak wavelength to 800nm that satisfies the requirements of the present embodiment. As a comparison object with the present embodiment, a phosphor of comparative example 1 having a minimum value of 17.74% of reflectance in a wavelength region from a light emission peak wavelength to 800nm was prepared.
Table 1 shows the composition of each phosphor, the minimum value of reflectance in the wavelength region of emission peak wavelength to 800nm, the emission peak wavelength, the spectral half-width, and the relative emission intensity when the emission intensity of the phosphor of comparative example 1 is 1. The XRD patterns and emission spectra of the phosphors of example 1 and comparative example 1 are shown in fig. 1 and 2, respectively.
It can be seen that: the phosphor of examples 1 and 2 had a space group of P-1 and a peak wavelength of light emission of around 644 nm. Further, the spectral half-widths were good at 54nm and 57nm, respectively, and the luminous intensity was greatly improved several times or 10 times or more as compared with the phosphor of comparative example 1, and when used in a light-emitting device, a light-emitting device having good conversion efficiency was obtained.
TABLE 1
Next, phosphors (examples 3 to 12) were prepared in which the structure of MC element in the formula [1] (or MD in the formula [2 ]) and the reflectance were variously changed. Table 1 shows the composition of each example, the minimum value of reflectance in the wavelength region from the emission peak wavelength to 800nm, the emission peak wavelength, the spectral half-width, the relative emission intensity when the emission intensity of comparative example 1 is 1, and the Internal Quantum Efficiency (iQE). The space groups in examples 3 to 12 were all P-1. Table 2 shows the difference or ratio between the minimum value of the reflectance in the predetermined wavelength region and the minimum value of the reflectance in each region.
In addition, as reference example 1 showing an example of a conventional phosphor, a phosphor having CaAlSiN was prepared 3 : eu, commercially available CASN phosphor (manufactured by Mitsubishi chemical corporation, BR-101/J). The phosphor of reference example 1 had a space group of Cmc2 1 The peak wavelength of luminescence is 646nm, and the half-width of spectrum is 87nm.
TABLE 2
TABLE 2
Reflection band a: minimum value of reflectance of light emission peak wavelength to 800nm
Reflectivity B: minimum value of reflectance of light emission peak wavelength to [ light emission peak wavelength-50 nm ]
Reflectance C: minimum value of reflectivity of 400nm to 550nm
The XRD patterns of the phosphors of examples 4 to 10 are shown in FIG. 3. The emission spectra of the phosphors of examples 4 to 9 and comparative example 1 are shown in fig. 4A, and the emission spectra of the phosphors of examples 10 to 12 and comparative example 1 are shown in fig. 4B. The normalized emission spectra of the phosphors of examples 4, 5, and 9 and reference example 1, when the emission peak intensities were 1, are shown in fig. 5. The spectral reflectance curves of the phosphors of examples and comparative examples are shown in fig. 6A to D, and the relationships between the relative emission intensities of the phosphors of examples and the [ reflectances a-B ], [ reflectances a-C ], [ reflectances C/reflectances a ] and [ reflectances B/reflectances a ] of the reflectances a to C are shown in fig. 7A to D. The phosphor of reference example 1 had a peak wavelength of 646nm and a half-width of 87nm.
As exemplified in the above examples, the phosphor of the present embodiment can realize various emission peak wavelengths according to the application by adjusting the composition. In addition, the phosphors of each example exhibited very high emission intensity as compared to the phosphor of comparative example 1.
Further, the phosphor of each example has a very small spectral half-width compared to the phosphor of reference example 1, and by using such a phosphor, a light-emitting device having excellent color rendering properties, color reproducibility, and conversion efficiency can be provided.
Next, results S1 to S9 of simulation concerning characteristics of the light emitting device including the phosphor of the present embodiment are described.
Under the assumption that a SCASN phosphor (manufactured by Mitsubishi chemical corporation, BR-102/D) having an emission peak wavelength of 620nm, a CASN phosphor (manufactured by Mitsubishi chemical corporation, BR-101/J) having an emission peak wavelength of 646nm, which is the phosphor of the above-described examples and comparative examples shown in Table 3 below, as a second red phosphor, and a LuAG phosphor (manufactured by Mitsubishi chemical corporation, BG-801/B4) as a green phosphor were used, the emission spectrum of the white LED including each phosphor was derived from information such as the emission spectrum and the Internal Quantum Efficiency (iQE) of each phosphor. All simulations were performed assuming blue LED chips emitting light at 449 nm. The amounts of the green phosphor and the first and second red phosphors were adjusted so that the chromaticity coordinates match the coordinates of 3000K white light on the black body curve when the average color rendering index Ra was 90 or more, and the characteristics were compared. The results are shown in FIGS. 8A to G. Table 3 shows the results obtained by obtaining the average color rendering index Ra, the red color rendering index R9, and the conversion efficiency (LER) from the respective spectra.
In table 3, "relative value of phosphors" means a mass ratio of each phosphor, where the total mass of each phosphor is 100%, and "green" is the LuAG phosphor, "red 1" is the first red phosphor, and "red 2" is the second red phosphor.
TABLE 3
TABLE 3 Table 3
As can be seen from table 3: the light-emitting device using the phosphor of each example was significantly improved in average color rendering index Ra as compared with the phosphor of comparative example 1, and the LER or red color rendering index R9 or both were improved as compared with the phosphor of reference example 1, and both of the conversion efficiency and color rendering property or color reproducibility were excellent. In the case where the phosphor of comparative example 1 is used as the second red phosphor, since the emission intensity of the red region is low, the value of R9 indicating the color rendering property of red is extremely low, and accurate evaluation cannot be performed.
It can be seen from the above that: according to the present embodiment, a phosphor having a good emission peak wavelength, a narrow spectral half-width, and/or a high emission intensity can be provided, and further, by providing the phosphor, a light-emitting device, an illumination device, an image display device, and/or a vehicle display lamp having good color rendering properties, color reproducibility, and/or conversion efficiency can be provided.
While various embodiments have been described above with reference to the drawings, the present application is not limited to the above examples. It is apparent to those skilled in the art that various modifications and corrections can be made within the scope described in the scope of the claims, and it is understood that they are of course within the technical scope of the present application. The components in the above embodiments may be arbitrarily combined within a range not departing from the gist of the present application.
The present application is based on Japanese patent application No. 2022-007133 filed on 1 month 20 of 2022 and Japanese patent application No. 2022-007133 filed on 1 month 20 of 2022 (Japanese patent application No. 2022-007119), and the contents thereof are incorporated by reference.
Industrial applicability
The light-emitting device of the present application is excellent in color rendering property, color reproducibility and/or conversion efficiency, and therefore can be used for an illumination device, an image display device and a display lamp for a vehicle.
Claims (20)
1. A light-emitting device is provided with a phosphor,
the phosphor contains a crystal phase having a composition represented by the following formula [2],
and the minimum value of the reflectance of the phosphor in a predetermined wavelength region, which is a region of the phosphor having a light emission peak wavelength of 800nm, is 20% or more,
Re x MA a MB b (MC’ 1－y MD y ) c N d X e [2]
In the above-mentioned formula [2],
MA contains more than 1 element selected from Sr, ca, ba, na, K, Y, gd and La,
MB contains 1 or more elements selected from Li, mg and Zn,
MC' is Al, and the metal is selected from the group consisting of aluminum,
MD contains 1 or more elements selected from Si, ga, in and Sc,
x contains more than 1 element selected from F, cl, br and I,
re contains 1 or more elements selected from Eu, ce, pr, tb and Dy,
a. b, c, d, e, x, y each satisfy the following formula,
0.7≤a≤1.3
0.7≤b≤1.3
2.4≤c≤3.6
3.2≤d≤4.8
0.0≤e≤0.2
0.0＜x≤0.2
0.0＜y≤1.0。
2. the light-emitting device according to claim 1, wherein 80 mol% or more of MA in the formula [2] is 1 or more element selected from Sr, ca, and Ba.
3. The light-emitting device according to claim 1, wherein 80 mol% or more of MB in the formula [2] is Li.
4. The light-emitting device according to claim 1, wherein in the formula [2], 80 mol% or more of MD is Ga.
5. The light-emitting device according to claim 1, wherein a space group of a crystal phase having the composition represented by the formula [2] is P-1.
6. The light-emitting device according to claim 1, wherein the phosphor has a light emission peak wavelength in a range of 620nm to 645nm in an emission spectrum.
7. The light-emitting device according to claim 1, wherein a full width at half maximum (FWHM) of the emission spectrum of the phosphor is 70nm or less.
8. The light-emitting device according to claim 1, further comprising a yellow phosphor and/or a green phosphor.
9. The light-emitting device according to claim 8, wherein the yellow phosphor and/or the green phosphor contains a phosphor of any one or more of garnet-based phosphor, silicate-based phosphor, nitride phosphor, and oxynitride phosphor.
10. The light-emitting device according to claim 1, wherein the light-emitting device comprises a 1 st light-emitting body and a 2 nd light-emitting body that emits visible light by irradiation with light from the 1 st light-emitting body, wherein the 2 nd light-emitting body comprises a fluorescent body comprising a crystal phase having a composition represented by the formula [2 ].
11. A lighting device provided with the light-emitting device according to claim 10 as a light source.
12. An image display device provided with the light-emitting device according to claim 10 as a light source.
13. A display lamp for a vehicle, comprising the light-emitting device according to claim 10 as a light source.
14. A phosphor comprising a crystalline phase having a composition represented by the following formula [2],
and the minimum value of the reflectance in a predetermined wavelength region, which is a region of a light emission peak wavelength to 800nm,
Re x MA a MB b (MC’ 1－y MD y ) c N d X e [2]
In the above-mentioned formula [2],
MA contains more than 1 element selected from Sr, ca, ba, na, K, Y, gd and La,
MB contains 1 or more elements selected from Li, mg and Zn,
MC' is Al, and the metal is selected from the group consisting of aluminum,
MD contains 1 or more elements selected from Si, ga, in and Sc,
x contains more than 1 element selected from F, cl, br and I,
re contains 1 or more elements selected from Eu, ce, pr, tb and Dy,
a. b, c, d, e, x, y each satisfy the following formula,
0.7≤a≤1.3
0.7≤b≤1.3
2.4≤c≤3.6
3.2≤d≤4.8
0.0≤e≤0.2
0.0＜x≤0.2
0.0＜y≤1.0。
15. the phosphor according to claim 14, wherein 80 mol% or more of MA in the formula [2] is 1 or more elements selected from Sr, ca and Ba.
16. The phosphor according to claim 14, wherein 80 mol% or more of MB in the formula [2] is Li.
17. The phosphor according to claim 14, wherein in the formula [2], 80 mol% or more of MD is Ga.
18. The phosphor according to claim 14, wherein the space group of the crystal phase having the composition represented by the formula [2] is P-1.
19. The phosphor according to claim 14, wherein the phosphor has a luminescence peak wavelength in a range of 620nm to 660nm in a luminescence spectrum.
20. The phosphor according to claim 14, wherein a full width at half maximum (FWHM) of the emission spectrum is 70nm or less.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022007319A JP7311866B1 (en) | 2022-01-20 | 2022-01-20 | Phosphor |
| JP2022-007319 | 2022-01-20 | ||
| JP2022-007317 | 2022-01-20 | ||
| CN202280005282.7A CN117043971A (en) | 2022-01-20 | 2022-08-19 | Phosphor, light emitting device, illumination device, image display device, and display lamp for vehicle |
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| CN202280005282.7A Division CN117043971A (en) | 2022-01-20 | 2022-08-19 | Phosphor, light emitting device, illumination device, image display device, and display lamp for vehicle |
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| CN116987501A true CN116987501A (en) | 2023-11-03 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017008130A (en) * | 2015-06-16 | 2017-01-12 | 日亜化学工業株式会社 | Nitride phosphor, manufacturing method and light emitting device thereof |
| CN110305661A (en) * | 2018-03-27 | 2019-10-08 | 信源陶磁股份有限公司 | Nitride red phosphor body and its light emitting device |
| CN111902517A (en) * | 2018-03-28 | 2020-11-06 | 电化株式会社 | Phosphor, method for producing same, and light-emitting device |
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2022
- 2022-08-19 CN CN202310826215.8A patent/CN116987501A/en active Pending
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| JP2017008130A (en) * | 2015-06-16 | 2017-01-12 | 日亜化学工業株式会社 | Nitride phosphor, manufacturing method and light emitting device thereof |
| CN110305661A (en) * | 2018-03-27 | 2019-10-08 | 信源陶磁股份有限公司 | Nitride red phosphor body and its light emitting device |
| CN111902517A (en) * | 2018-03-28 | 2020-11-06 | 电化株式会社 | Phosphor, method for producing same, and light-emitting device |
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| MU-HUAI FANG ET AL.: "Chemical Control of SrLi(Al 1-x Ga x ) 3 N 4:Eu 2+ Red Phosphor at Extreme Condition for the Application in Light-emitting Diodes", 《CHEMISTRY OF MATERIALS》, vol. 31, 28 May 2019 (2019-05-28), pages 4614 - 4618 * |
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