CN116978814A

CN116978814A - Gas supply system, substrate processing apparatus, and method for manufacturing semiconductor device

Info

Publication number: CN116978814A
Application number: CN202310251520.9A
Authority: CN
Inventors: 柴田智则
Original assignee: Kokusai Electric Corp
Current assignee: Kokusai Electric Corp
Priority date: 2022-04-28
Filing date: 2023-03-15
Publication date: 2023-10-31

Abstract

The invention provides a gas supply system, a substrate processing apparatus and a method for manufacturing a semiconductor device, wherein a raw material gas is supplied to a processing chamber without phase change. The technique comprises: a first valve group for opening and closing a flow path for supplying a fluid involved in the processing of the substrate to the processing chamber; a plurality of heating areas for heating the plurality of first valves; a soaking unit provided in the plurality of heating regions; and a member which is provided between the heating regions and adjusts heat conduction between the soaking portions.

Description

Gas supply system, substrate processing apparatus, and method for manufacturing semiconductor device

Technical Field

The present disclosure relates to a gas supply system, a substrate processing apparatus, and a method of manufacturing a semiconductor device.

Background

As an example of a substrate processing apparatus that supplies a processing gas to a substrate (hereinafter referred to as a "wafer") and performs processing under predetermined processing conditions, a semiconductor manufacturing apparatus that manufactures a semiconductor device is known. In recent years, as shown in patent document 1 or patent document 2, various process gases such as a raw material gas that is liquid or solid at normal temperature are sometimes used in the apparatus. In this case, in order to keep the source gas in a gaseous state, not only the gas supply pipe but also a valve or the like provided in the gas supply pipe may be heated.

Prior art literature

Patent literature

Patent document 1: japanese patent laid-open No. 2020-038904

Patent document 2: international publication No. 2017-130850

Disclosure of Invention

Problems to be solved by the invention

The present disclosure provides a technique for supplying a source gas to a process chamber without phase change.

Means for solving the problems

According to one aspect of the present disclosure, there is provided a technique having: a first valve that opens and closes a flow path for supplying a fluid involved in the processing of the substrate to the processing chamber; a plurality of heating areas for heating the plurality of first valves; a soaking unit provided in the plurality of heating regions; and a member provided between the heating regions and adjusting heat conduction between the soaking portions.

Effects of the invention

According to the present disclosure, the source gas can be supplied to the processing chamber without phase change.

Drawings

Fig. 1 is a plan view schematically showing an example of a substrate processing apparatus applied to the embodiment.

Fig. 2 is a vertical cross-sectional view schematically showing an example of a substrate processing apparatus applied to the embodiment.

Fig. 3 is a vertical cross-sectional view schematically showing an example of a substrate processing apparatus applied to the embodiment.

Fig. 4 is a longitudinal sectional view schematically showing an example of a gas supply system applied to the embodiment.

Fig. 5 is a plan view schematically showing an example of the final valve installation unit applied to the embodiment.

Fig. 6 is a longitudinal sectional view schematically showing an example of a final valve applied to the embodiment, and is a longitudinal sectional view a of fig. 5.

In fig. 7, (a) shows an example of a member provided in a nip applied to a heating region of the embodiment, and (B) shows an example of heat conduction of a member provided in a nip of the heating region of (a).

Fig. 8 is an example of a flowchart of a substrate processing process according to an embodiment.

Fig. 9 is a plan view schematically showing a modification of the final valve installation unit applied to the embodiment.

Fig. 10 is a longitudinal sectional view schematically showing an example of a final valve applied to the embodiment, and is a B longitudinal sectional view of fig. 5.

Fig. 11 (a) is a plan view schematically showing a modification of the final valve installation portion according to the embodiment, and (B) is a plan view schematically showing a modification of the final valve installation portion according to the embodiment, in which the final valve between the adjustment portions is not (removed).

In the figure:

75-final valve setting section, 100-control section (controller).

Detailed Description

The drawings used in the following description are schematic, and the dimensional relationships of the elements and the ratios of the elements shown in the drawings are not necessarily the same as those in actual cases. In addition, the relationship between the dimensions of the elements, the ratio of the elements, and the like do not necessarily coincide with each other among the plurality of drawings.

In all the drawings, the same or corresponding structures are denoted by the same or corresponding reference numerals, and repetitive description thereof will be omitted. The storage chamber 9 described later is a front side (front side), and the conveyance chambers 6A and 6B described later are rear sides (rear side). The boundary line (adjacent surface) of the processing modules 3A and 3B described later is set to be inner and the boundary line is set to be outer. In the present embodiment, the substrate processing apparatus 2 is configured as a vertical substrate processing apparatus (hereinafter referred to as a processing apparatus) 2 that performs a substrate processing step such as a heat treatment, which is one step of a manufacturing process in a manufacturing method of a semiconductor device (apparatus).

As shown in fig. 1 and 2, the processing device 2 includes two adjacent processing modules 3A and 3B. The processing module 3A is constituted by a processing furnace 4A and a transfer chamber 6A. The process module 3B is constituted by a process furnace 4B and a transfer chamber 6B. Conveying chambers 6A and 6B are disposed below the processing furnaces 4A and 4B, respectively. A transfer chamber 8 including a transfer machine 7 for transferring the wafer W is disposed adjacent to the front sides of the transfer chambers 6A and 6B. A receiving chamber 9 for receiving a wafer cassette (front opening wafer cassette) 5 is connected to the front side of the transfer chamber 8, and the wafer cassette 5 receives a plurality of wafers W. An I/O port 22 is provided on the front surface of the housing chamber 9, and the wafer cassette 5 is carried in and out of the processing apparatus 2 via the I/O port 22.

Gate valves 90A and 90B are provided on boundary walls (adjacent surfaces) between the transfer chambers 6A and 6B and the transfer chamber 8, respectively. Pressure detectors are provided in the transfer chamber 8 and the transfer chambers 6A and 6B, respectively, and the pressure in the transfer chamber 8 is set to be lower than the pressure in the transfer chambers 6A and 6B. Further, oxygen concentration detectors are provided in the transfer chamber 8 and the transfer chambers 6A and 6B, respectively, and the oxygen concentration in the transfer chamber 8A and the transfer chambers 6A and 6B is maintained lower than the oxygen concentration in the atmosphere.

A cleaning unit that supplies clean air to the transfer chamber 8 is provided at the top of the transfer chamber 8, and is configured to circulate inactive gas as clean air in the transfer chamber 8, for example. By circularly purging the transfer chamber 8 with an inert gas, the transfer chamber 8 can be kept in a clean atmosphere. With this configuration, the particles and the like in the transfer chambers 6A and 6B can be prevented from being mixed into the transfer chamber 8, and the formation of the natural oxide film on the wafer W in the transfer chamber 8 and the transfer chambers 6A and 6B can be prevented.

Since the processing modules 3A and 3B have the same configuration, only the processing module 3A will be described below.

As shown in fig. 2, the treatment furnace 4A includes a cylindrical reaction tube 10A and a heater 12A as a heating device (heating means) provided on the outer periphery of the reaction tube 10A. The reaction tube 10A is formed of, for example, quartz or SiC. A processing chamber 14A for processing a wafer W as a substrate is formed inside the reaction tube 10A. The reaction tube 10A is provided with a temperature detecting portion 16A as a temperature detector. The temperature detecting section 16A is provided upright along the inner wall of the reaction tube 10A.

The gas for substrate processing is supplied to the processing chamber 14A by a gas supply mechanism 34 as a gas supply system or a gas supply system. The gas supplied from the gas supply mechanism 34 is replaced according to the type of film to be formed. Here, the gas supply mechanism 34 includes a source gas supply unit, a reaction gas supply unit, and an inert gas supply unit. The gas supply mechanism 34 is housed in a supply box 72 described later. The supply box 72 is provided so as to pass through the process modules 3A and 3B, and is therefore regarded as a common supply box.

The source gas supply unit as the first gas supply unit includes a gas supply pipe 36a, and a Mass Flow Controller (MFC) 38a as a flow controller (flow controller) and valves 41a and 40a as on-off valves are provided in this order from the upstream side of the gas supply pipe 36 a. The gas supply pipe 36a is connected to a nozzle 44a penetrating the side wall of the manifold 18. The nozzle 44a is provided vertically in the reaction tube 10A, and has a plurality of supply holes formed therein so as to open toward the wafers W held by the boat 26. The source gas is supplied to the wafer W through the supply holes of the nozzle 44 a.

In the following, the same configuration is used to supply the reaction gas from the reaction gas supply unit as the second gas supply unit to the wafer W through the gas supply pipe 36b, MFC38b, valve 41b, valve 40b, and nozzle 44 b. The inert gas is supplied from the inert gas supply unit to the wafer W through the supply pipes 36c and 36d, MFCs 38c and 38d, valves 41c and 41d, valves 40c and 40d, and nozzles 44a and 44 b. The nozzle 44b is provided vertically in the reaction tube 10A, and has a plurality of supply holes formed therein so as to open toward the wafers W held by the boat 26. The reactive gas is supplied to the wafer W through the supply holes of the nozzle 44 b. As the reaction gas, for example, a nitrogen-containing gas or an oxygen-containing gas is supplied to the wafer W.

The gas supply mechanism 34 is further provided with a third gas supply portion for supplying a reactive gas, a raw material gas, or an inert gas and a cleaning gas which do not participate in the substrate processing to the wafer W. The reaction gas is supplied from the third gas supply unit to the wafer W through the gas supply pipe 36e, MFC38e, valve 41e, valve 40e, and nozzle 44 c. The inert gas or the cleaning gas is supplied from the inert gas supply unit to the wafer W through the supply pipe 36f, MFC38f, valve 41f, valve 40f, and nozzle 44 c. The nozzle 44c is provided vertically in the reaction tube 10A, and has a plurality of supply holes formed therein so as to open toward the wafers W held by the boat 26. The source gas is supplied to the wafer W through the supply holes of the nozzle 44 c. Examples of supplying the cleaning gas to the wafer W include supplying the cleaning gas to the wafer W as an etching gas, supplying the cleaning gas to a dummy wafer (dummy substrate) which is not a product, and the like.

Three nozzles 44a, 44b, 44c are provided in the reaction tube 10A, and three kinds of raw material gases can be supplied into the reaction tube 10A in a predetermined order and/or a predetermined cycle. The valves 40A, 40b, 40c, 40d, 40e, and 40f connected to the nozzles 44a, 44b, and 44c in the reaction tube 10A are supply valves called final valves, and are provided in a final valve installation unit 75A described later. Hereinafter, each valve 40 provided in the final valve installation portion 75A may be referred to as a first valve. Similarly, three nozzles 44a, 44B, 44c are provided in the reaction tube 10B, and three kinds of raw material gases can be supplied into the reaction tube 10B in a predetermined order and/or a predetermined cycle. Valves 40a, 40B, 40c, 40d, 40e, and 40f connected to nozzles 44a, 44B, and 44c in the reaction tube 10B are supply valves, and are provided in a final valve installation unit 75B described later. Hereinafter, each valve 40 provided in the final valve installation portion 75B may be referred to as a second valve. The valve 40 is a general expression indicating the valves 40a to 40f, and the same expression may be performed for other elements in the following.

The plurality of gas pipes 35 on the output side of the valves 41a to 41f are branched between the valves 41a to 41f and the valves 40A to 40f into a plurality of gas distribution pipes 35A connected to the valves 40A, 40B, 40c, 40d, 40e, 40f of the reaction tube 10A and a plurality of gas distribution pipes 35B connected to the valves 40A, 40B, 40c, 40d, 40e, 40f of the reaction tube 10B, respectively. The plurality of gas pipes 35 can be regarded as a common gas pipe to the reaction pipes 10A and 10B.

An exhaust pipe 46A is attached to the manifold 18A. A vacuum pump 52A as a vacuum evacuation device is connected to the exhaust pipe 46A via a pressure sensor 48A as a pressure detector (pressure detecting section) that detects the pressure of the processing chamber 14A and a APC (Auto Pressure Controller) valve 50A as a pressure regulator (pressure adjusting section). With this configuration, the pressure in the processing chamber 14A can be set to the processing pressure corresponding to the processing. The exhaust system a is mainly constituted by the valve 50A of the exhaust pipe 46A, APC and the pressure sensor 48A. The exhaust system a is housed in an exhaust box 74A described later. A vacuum pump 52A may be provided commonly to the process modules 3A and 3B.

The processing chamber 14A accommodates therein a wafer boat 26A as a substrate holder for vertically supporting a plurality of wafers W, for example, 25 to 150 wafers W in a shelf shape. The boat 26A is supported above the heat insulating portion 24A by a rotation shaft 28A penetrating the cover portion 22A and the heat insulating portion 24A. The rotation shaft 28A is connected to a rotation mechanism 30A provided below the lid 22A, and the rotation shaft 28A is configured to be rotatable in a state in which the inside of the reaction tube 10A is hermetically sealed. The cover 22A is driven in the up-down direction by a boat elevator 32A as an elevating mechanism. Thereby, the boat 26A and the lid 22A are integrally lifted and lowered, and the boat 26A is carried in and out of the reaction tube 10A.

The transfer of the wafers W to the wafer boat 26A is performed in the transfer chamber 6A. As shown in fig. 1, a cleaning unit 60A is provided on one side surface (the outer side surface of the transfer chamber 6A, the side surface opposite to the side surface facing the transfer chamber 6B) in the transfer chamber 6A, and is configured to circulate cleaning air (for example, inactive gas) in the transfer chamber 6A. The inert gas supplied into the transfer chamber 6A is discharged from the transfer chamber 6A through the exhaust portion 62A provided on the side surface facing the cleaning unit 60A (the side surface facing the transfer chamber 6B) via the wafer boat 26A, and is supplied from the cleaning unit 60A into the transfer chamber 6A again (cycle cleaning). The pressure in the transfer chamber 6A is set to be lower than the pressure in the transfer chamber 8. The oxygen concentration in the transfer chamber 6A is set to be lower than the oxygen concentration in the atmosphere. With this structure, formation of a natural oxide film on the wafer W during the transfer operation of the wafer W can be suppressed.

The controller 100 for controlling the rotation mechanism 30A, the boat elevator 32A, the MFCs 38a to f of the gas supply mechanism 34, the valves 41a to f, 40A to f, and the APC valve 50A are connected to each other. The controller 100 is configured by, for example, a microprocessor (computer) having a CPU, and is configured to control the operation of the processing device 2. The controller 100 is connected to an input/output device 102 configured as, for example, a touch panel. The controller 100 may be provided in each of the processing modules 3A and 3B, or may be provided in common.

Next, the back surface structure of the processing apparatus 2 will be described.

As shown in fig. 1, maintenance ports 78A and 78B are formed on the back sides of the conveyance chambers 6A and 6B, respectively. The maintenance port 78A is formed on the conveyance chamber 6B side of the conveyance chamber 6A, and the maintenance port 78B is formed on the conveyance chamber 6A side of the conveyance chamber 6B. The maintenance ports 78A and 78B are opened and closed by maintenance doors 80A and 80B. The maintenance doors 80A and 80B are rotatable about hinges 82A and 82B. The hinge 82A is provided on the conveyance chamber 6B side of the conveyance chamber 6A, and the hinge 82B is provided on the conveyance chamber 6A side of the conveyance chamber 6B. The maintenance area is formed on the process module 3B side of the back surface of the process module 3A and the process module 3A side of the back surface of the process module 3B.

As shown in phantom lines, the maintenance doors 80A and 80B horizontally rotate rearward of the rear sides of the conveyance chambers 6A and 6B about the hinges 82A and 82B, and thereby the rear maintenance ports 78A and 78B are opened. The maintenance door 80A is configured to be openable to the left up to 180 ° toward the conveyance chamber 6A. The maintenance door 80B is configured to be openable to the right of the transport chamber 6B up to 180 °. The maintenance doors 80A and 80B may be configured to be detachable, and maintenance may be performed after the detachment.

A utility system 70 is provided near the back of the transfer chambers 6A, 6B. The utility system 70 is disposed between the maintenance areas A, B. The utility system 70 includes final valve setting portions 75A and 75B, which are supply valve boxes, as valve assemblies, exhaust boxes 74A and 74B, a supply box 72, and controller boxes 76A and 76B. The utility system 70 is composed of, in order from the tank side (the conveyance chambers 6A and 6B side), exhaust tanks 74A and 74B, a supply tank 72, and controller tanks 76A and 76B.

The final valve installation portions 75A and 75B are installed above the exhaust boxes 74A and 74B. The maintenance ports of the respective tanks of the utility system 70 are formed on the maintenance area A, B side, respectively. The supply tank 72 is disposed on the opposite side of the exhaust tank 74A from the side adjacent to the transport chamber 6A, and the supply tank 72B is disposed adjacent to the side of the exhaust tank 74B adjacent to the transport chamber 6B.

For example, in the process module 3A, the final valve installation portion 75A in which the first valve of the gas supply mechanism 34 (the valves 40a, 40b, 40c located at the most downstream of the gas supply system) is installed is arranged above the exhaust box 74A. With this configuration, the length of the piping from the first valve to the processing chamber can be reduced, and thus the quality of the film can be improved. In addition, although not shown, the valves 40d, 40e, 40f are disposed in the final valve installation portion 75A in addition to the valves 40a, 40b, 40 c. Although not described, the processing module 3B has the same structure.

With reference to FIG. 4, nitrogen (N ₂ ) A gas supply system 34 for gas, reaction gas, raw material gas, and cleaning Gas (GCL) will be described. The structure of the final valve installation portion 75A is the same as that of the final valve installation portion 75B, and description of the structure of the final valve installation portion 75B is omitted.

The source gas can be supplied to the nozzles 44A of the reaction tubes 10A and 10B via the valve 42a, MFC38a, valve 41a, and valves 40A of final valve setting units 75A and 75B provided in the vicinity of the process chambers 14A and 14B.

The reaction gas can be supplied to the nozzles 44B of the reaction tubes 10A and 10B via the valve 42B, MFC38B, valve 41B, and valve 40B of the final valve setting portions 75A and 75B provided near the process chambers 14A and 14B. The reaction gas can also be supplied to the nozzles 44c of the reaction tubes 10A, 10B via the valve 41B2 and the valves 40f of the final valve setting portions 75A, 75B.

N as an inert gas ₂ The gas can be supplied to the nozzles 44A of the reaction tubes 10A and 10B via the valve 42d, MFC38c, valve 41c, and valve 40c of the final valve installation sections 75A and 75B provided in the vicinity of the process chambers 14A and 14B. In addition, N ₂ The gas can also be supplied to the nozzles 44B of the reaction tubes 10A, 10B via the valve 42d, MFC38d, valve 41d, and valve 40d of the final valve setting portions 75A, 75B. In addition, N ₂ The gas can also be supplied to the nozzles 44c of the reaction tubes 10A, 10B via the valve 42d, MFC38f, valve 41f, and valve 40f of the final valve setting portions 75A, 75B.

The cleaning gas GCL can be supplied to all of the nozzles 44a, 40B, 40c of the reaction tubes 10A, 10B via the valves 42g, MFC38g, 41g, and valves 40g, 40g2, 40g3 of the final valve installation portions 75A, 75B.

In addition, a valve 41a2 downstream of the MFC38a, a valve 41b3 downstream of the MFC38b, and a valve 41g2 downstream of the MFC38g are connected to the exhaust system ES.

As shown in fig. 4, the plurality of gas pipes 35 as distribution pipes on the downstream side of the gas supply system 34 are branched into a plurality of gas distribution pipes 35A connected to the final valve setting portion 75A and a plurality of gas distribution pipes 35B connected to the final valve setting portion 75B. The branched plurality of gas distribution pipes 35A and the plurality of gas distribution pipes 35B have equal lengths to each other. The plurality of gas pipes 35 are appropriately provided with a heater, a filter, a one-way valve (check valve), a surge tank, and the like.

The valves 40A to 40d, 40f, 40g2, and 40g3 as the first valve group of the process module 3A are provided immediately before the three nozzles (also referred to as injectors) 44a, 44b, and 44c included in the reaction tube 10A of the process module 3A, and the gas supply to the injectors can be directly operated by the controller 100. The first valve group (valves 40 a-40 d, 40f, 40g2, 40g 3) of fig. 4 is capable of supplying multiple gases to one injector (44 a, 44b, 44 c) simultaneously (i.e., in a mixture). The cleaning gas GCL from one distribution pipe can be supplied to all the injectors (44 a, 44b, 44 c). The valves 40a to 40d, 40f, 40g2, 40g3 as the first valve group of the process module 3B have the same structure as the first valve group (valves 40a to 40d, 40f, 40g2, 40g 3) of the process module 3A.

As shown in fig. 4, the fluid involved in the processing of the wafer W and the fluid not involved in the processing of the wafer W are supplied to the processing chamber 14A (14B) through the final valve setting portion 75A (75B). Here, the fluid involved in the processing of the wafer W includes a processing gas including a source gas, a reaction gas, a modifying gas, an etching gas, or the like, or a mixed gas of these gases, or a mixed gas of a processing gas and an inactive gas. The fluid that does not participate in the processing of the wafer W is an inert gas. In the present embodiment, a cleaning gas is included as a fluid that does not participate in the processing of the wafer W.

Next, a final valve setting unit 75 provided with a final valve 40 according to an embodiment of the present disclosure will be described with reference to fig. 5. Unlike the configuration of fig. 4, fig. 5 is a diagram for explanation, and does not need to have the same configuration as fig. 4. The final valve installation portion 75B has the same configuration as the final valve installation portion 75A, and therefore, a description thereof will be omitted herein, and a description thereof will be provided below in association with the final valve installation portion 75A.

Fig. 5 is an example (an example) of a plan view of the final valve installation portion 75, in which an elongated rectangle (quadrangle) of a virtual line (broken line) represents a heater HT as a heating portion (or heating means), and a circle of a solid line represents a heating region H. The heaters HT1 to HT3 and thermocouples TC1 to TC3, which are temperature sensors not shown, are provided with heating regions H1 to H3, respectively, and a joint piece, which is a member for adjusting heat conduction, is disposed at a nip of each heating region H. The heaters HT1 to HT3 each as a heating unit form heating regions H1 to H3. In fig. 5, the connecting pieces are shown by solid lines between the heating regions H. The heater HT is not visible from the external appearance, but is illustrated with phantom lines (broken lines) for convenience of explanation of the heating region H. Here, the heating region H is a generic term of the heating regions H1 to H3, and when referred to as the heating region H, the heating region H1 to H3 is the entire heating region H1 to H3 or any one of the heating regions H1 to H3.

By heating with each heater HT, the final valve installation portion 75A is temperature-controlled so as to be equal to or higher than a predetermined temperature. In particular, when raw materials that are liquid or solid at ordinary temperature are used, temperature control is performed so that the vaporization temperature (or sublimation temperature) of these raw materials becomes higher. The heaters HT are individually controllable. Here, since the soaking plate is provided as the soaking section, the heating regions H can be heated uniformly, and even if there are a plurality of heating regions H, there is a possibility that the space between the heating regions H (between the soaking plates) becomes an air layer and is likely to dissipate heat, and temperature unevenness is likely to occur. However, in fig. 5, since the connecting pieces as members for adjusting the heat transfer between the soaking portions are arranged between the heating regions H, temperature unevenness can be suppressed. Details will be described later.

Next, the structure and operation of the first valve group 40, which is the first valve group in one embodiment of the present disclosure, will be described with reference to fig. 6 and 10. The first (second) valve 40 in the final valve installation portion 75A (75B) is a valve installed at a position (downstream side) closest to the process chamber 14A (14B) among valves installed in pipes communicating with the process chamber 14A (14B). Here, the final valve installation portion 75A (75B) includes a plurality of valves 40 as final valve groups of the first valve groups, and is configured to include, in order from the lowest side in the up-down direction, at least a base portion, a soaking plate as a soaking portion, a block portion including flow paths through which a fluid for participating in the processing of the wafer W and a fluid not participating in the processing of the wafer W flow, a valve portion for opening and closing the flow paths by driving (up-down) valves (not shown), and a flange portion provided between the block portion and the valve portion. The first valve 40 as the first valve has a structure including the flange portion and the valve portion. A member (hereinafter, sometimes referred to as a connecting piece) for adjusting heat conduction between soaking parts described later is provided at the nip of the soaking plates. The vapor chamber is made of an alloy, and will be described later. The flow paths shown in fig. 6 and 10 are examples. In fig. 6 and 10, details of the piping between the first valves 40 and the flow paths in the block are omitted, but various flow paths are formed inside by a combination of various shapes of the block. An opening through which fluid flows is provided in the block. The gas flows through the openings of the block to form flow paths such as branches and merges. In fig. 5, the reason why the first valve 40 is divided into two and three rows is that the final valve installation portion 75A is housed in a limited space, and therefore the first valve is disposed in consideration of space efficiency.

The base portion is provided in common with the first valve 40 shown in fig. 6. When the combination of the common valves is performed, the valves are connected by the joint, and thus the required space becomes large, but by using the base portion, a space-saving valve integrated structure is realized. Specifically, the soaking section and the block section may be adjacently arranged on the base section, and the first valve group 40 in fig. 5 may be configured. Further, the first valve 40 and the adjacent other first valve 40 can be combined via the block portion, and various flow paths can be formed in each block portion.

The soaking section is divided into heating regions H, and as shown in fig. 6, a heating section HT as a cartridge heater is provided inside. The soaking part is composed of an aluminum block made of an aluminum alloy, and a hole for providing the heating part HT therein is formed. At this time, since the aluminum is subjected to the through-hole processing, the size is limited to some extent. Therefore, when the final valve setting portion 75A becomes larger, a plurality of heating portions HT are provided, forming a heating region H. Thereby, the soaking section is divided into each heating region H. Here, a connecting piece is interposed between the heating regions H (the boundary between the heating regions H1 and H2), and the occurrence of cold spots between the heating regions H is suppressed by suppressing heat escape at the boundary between the heating regions.

As shown in fig. 10, the temperature sensor is provided at a leak port adjacent to a gas flow path formed in the block portion or the flange portion. This allows the temperature sensor to be disposed closest to the flow path, and thus allows the temperature close to the actual gas temperature to be detected. The leak port is a port to which an inspection jig for detecting leakage (leak) of gas is attached. The periphery of the portion where the gas flow passage in the flange portion and the gas flow passage in the block portion are connected is sealed by a sealing portion so as to shut off the flow passage from the outside, and the flange portion and the block portion are fixed. Further, as an example, the flange portion and the block portion are SUS (Stainless Used Steel). In the present embodiment, a plurality of temperature sensors and thermal switches (overtemperature switches) are provided in a group, although not shown.

In fig. 6 and 10, a valve (e.g., a diaphragm valve) provided in a valve unit (not shown) is operated to open and close a gas flow path, so that gas supply and stop can be performed. As shown in fig. 10, the input side or the output side of the block portion can be connected to (a flange portion of) another first valve 40, not shown. The flow paths at the input end and the output end of the block portion are increased because the leak port provided in the flange portion communicates with the seal portion when the block portion is connected to the flange portion via the seal portion. With this structure, leakage from the seal portion can be inspected.

As shown in fig. 6, according to the structure of the first valve block 40, the final valve installation portion 75A can be heated uniformly at a predetermined temperature, and as for the final valve installation portion 75A, various raw materials are used with the miniaturization and the complexity of the equipment in recent years, and the structure of the gas supply system 34 is complicated, and as a result, the final valve installation portion 75A has a valve-integrated structure. This allows the fluid involved in the processing of the wafer W to be stably supplied to the processing chamber 14A without undergoing a phase change such as re-liquefaction. The structure of the connecting piece will be described later.

The storage unit 104 may be a storage device (hard disk or flash memory) incorporated in the controller 100, or may be a portable external recording device (magnetic tape, magnetic disk such as a floppy disk or a hard disk, optical disk such as a CD or DVD, magneto-optical disk such as MO, or semiconductor memory such as a USB memory or a memory card). The program may be provided to the computer by using a communication device such as the internet or a dedicated line. The program is read from the storage unit 104 by an instruction from the input/output device 102 or the like as needed, and the controller 100 executes a process according to the read recipe, whereby the processing device 2 executes a desired process based on the control of the controller 100. The controller 100 is housed in the controller box 76 (76A, 76B). In the case where the controller 100 is provided in each of the processing modules 3A and 3B, the controller 100 (a) that controls the processing module 3A is provided in the controller box 76A, and the controller 100 (B) that controls the processing module 3B is provided in the controller box 76B.

Next, a process (film forming process) of forming a film on a substrate using the processing apparatus 2 described above will be described with reference to fig. 8. Here, an example will be described in which a first process gas as a source gas and a second process gas as a reaction gas are supplied to the wafer W to form a film on the wafer W. In the following description, the operations of the respective units constituting the processing apparatus 2 are controlled by the controller 100.

In the film formation process in this embodiment, the step of supplying the source gas to the wafer W in the process chamber 14A, the step of removing the source gas (residual gas) from the process chamber 14A, the step of supplying the reactive gas to the wafer W in the process chamber 14A, and the step of removing the reactive gas (residual gas) from the process chamber 14A are repeated a predetermined number of times (one or more) to form a film on the wafer W.

(substrate carry-in S1 (wafer load and boat load))

The gate valve 90A is opened to transfer the wafers W to the wafer boat 26A. When a plurality of wafers W are loaded (wafer loaded) on the wafer boat 26A, the gate valve 90A is closed. The boat 26A is carried into (boat loaded into) the process chamber 14 by the boat elevator 32A, and the lower opening of the reaction tube 10A is hermetically closed (sealed) by the lid 22A.

(pressure adjustment and temperature adjustment S2)

Vacuum evacuation (depressurization evacuation) is performed by the vacuum pump 52A so that the process chamber 14A becomes a predetermined pressure (vacuum degree). The pressure of the process chamber 14A is measured by the pressure sensor 48A, and the APC valve 50A is feedback-controlled based on the measured pressure information. The heater 12A heats the wafer W in the processing chamber 14A to a predetermined temperature. At this time, the energization of the heater 12A is feedback-controlled based on the temperature information detected by the temperature detecting unit 16A so that the process chamber 14A has a predetermined temperature distribution. In addition, the rotation mechanism 30A starts to rotate the wafer boat 26A and the wafers W.

(film Forming treatment)

[ raw material gas supply step S3]

When the temperature of the processing chamber 14A is stabilized to a preset processing temperature, a source gas is supplied to the wafer W in the processing chamber 14A. The raw material gas is supplied to the process chamber 14A through the gas supply pipe 36a, the valves 41a and 40a, and the nozzle 44A by controlling the flow rate of the raw material gas to a desired value by the MFC38 a.

[ raw material gas discharge step S4]

Next, the supply of the source gas is stopped, and the processing chamber 14A is vacuum-exhausted by the vacuum pump 52A. In this case, N may be supplied from the inert gas supply unit ₂ The gas is supplied as an inert gas to the process chamber 14A (inert gas purge).

[ reaction gas supply step S5]

Then, a reaction gas is supplied to the wafer W in the process chamber 14A. The reaction gas is controlled to a desired flow rate by the MFC38b, and is supplied to the process chamber 14A via the gas supply pipe 36b, the valves 41b, 40b, and the nozzle 44 b.

[ reaction gas exhaust Process S6]

Then, the supply of the reaction gas is stoppedThe process chamber 14A is vacuum-exhausted by the vacuum pump 52A. In this case, N may be supplied from the inert gas supply unit ₂ The gas is supplied to the process chamber 14A (inactive gas purge). By performing the four steps described above a predetermined number of times (at least once), a desired film can be formed on the wafer W.

After forming the film, N is supplied from the inactive gas supply part ₂ The gas is changed into N in the processing chamber 14A ₂ Gas, and the pressure of the process chamber 14A is restored to normal pressure (atmospheric pressure restoration S7). Then, the cover 22A is lowered by the boat elevator 32A, and the boat 26A is carried out of the reaction tube 10A (boat-guiding S8). Then, the processed wafer W is taken out from the boat 26A (wafer unloading S9).

The wafer W may be stored in the wafer cassette 5, carried out of the processing apparatus 2, or transferred to the processing furnace 4B, and subjected to substrate processing such as annealing continuously. When the wafers W are processed in the processing furnace 4B continuously after the processing of the wafers in the processing furnace 4A, the gate valves 90A and 90B are opened, and the wafers W are directly transferred from the wafer boat 26A to the wafer boat 26B. The wafer W is then carried into and out of the processing furnace 4B in the same order as the substrate processing performed by the processing furnace 4A. The substrate processing in the processing furnace 4B is performed in the same order as the substrate processing performed in the processing furnace 4A, for example.

Next, with reference to fig. 7 a and 7B, a description will be given of a member provided at a boundary (boundary portion) between the heating region H1 and the heating region H2, for example. The connecting piece as the member shown in fig. 7 (a) is in the form of a sheet, but is not necessarily limited to this form. The material may be, for example, aluminum oxide or SUS, as long as the thermal conductivity is smaller than that of the soaking plate (aluminum alloy) and higher than that of air.

As shown in fig. 7 (a), the upper side of the connecting piece is provided with a large hole, and the lower side is provided with a small hole, so that the thermal conductivity is poor in the upper and lower directions. The difference in heat conduction between the upper and lower sides of the connecting piece has the following effects: the lower side of the soaking plate is actively heated, and after the soaking of the lower side is obtained, the soaking plate slowly transfers heat to the upper side to help the soaking plate to be uniform.

Specifically, as shown in fig. 7B, the contact area between the heating regions H1 and H2 is increased by the connecting piece on the side (lower portion of the soaking plate) distant from the temperature sensor, thereby promoting heat conduction (arrow display) and heating the gap between the heating regions H. The contact area between the heating region H1 and the heating region H2 is reduced by the connecting piece on the side (upper side) closer to the temperature sensor, whereby heat conduction (indicated by an arrow) can be suppressed, and the influence of thermal interference can be reduced.

As shown in fig. 7 (B), the heat conductivity is made different in the up-down direction between the upper and lower portions of the soaking portions by using the connecting piece in the present embodiment, but the present invention is not limited to this configuration. For example, the heat conductivity may be different in the up-down direction in three stages of the upper portion, the middle portion, and the lower portion. Further, a connecting piece having a heat conductivity gradually different in the vertical direction may be provided between the heating regions H1 and H2.

Further, since the heat conductivity may be different in the up-down direction between the soaking portions, it is needless to say that only the upper side of the connecting piece may be provided with the hole. The shape of the connecting piece is not limited to the hole (circular shape), but may be polygonal (triangle or more), star-shaped, diamond-shaped, or fan-shaped. In addition, not only graphics, but also letters, numbers, or a combination thereof may be used. The shape may be changed at the upper and lower sides between the soaking portions, or may be a combination of graphics and letters or numerals.

Further, since the heat conductivity may be different in the up-down direction between the soaking portions, the material may be changed between the upper and lower sides of the connecting piece. The conductivity of the upper material may be lower than the thermal conductivity of the lower material. The upper side may be made of SUS having low thermal conductivity, and the lower side may be made of alumina having higher thermal conductivity than SUS.

As described above, by using the connecting piece in the present embodiment, the heat conductivity is made different in the up-down direction between the soaking portions, and thereby the heat uniformity of the final valve installation portion 75A can be improved, and the effect of preventing re-liquefaction (or re-solidification) of the fluid (for example, gas) flowing through the flow path or piping in the block portion or the flange portion can be obtained.

Although the case where the heating regions H are heated to the same temperature has been described, in fig. 5, for example, the set temperature may be different between the heating regions H1 and H2. Therefore, the heating portion HT is configured to be capable of heating so as to be a temperature set for each heating region H. The heating unit HT is configured to be capable of heating to a predetermined temperature based on a predetermined gas flowing through a flow path provided in the heating region H. Specifically, the set temperature may be different for each heating region H of the final valve installation portion 75A according to the type of gas flowing through the heating region H. For example, it is sometimes controlled to a different temperature in each heating region according to the vaporization temperature of the fluid involved in film formation.

For example, in fig. 5, when the raw material gas a having the vaporization temperature a ℃ flows through the heating region H1 and the raw material gas B having the vaporization temperature B ℃ (B < a) flows through the heating region H2, it is considered that each heating region H is uniformly heated to the vaporization temperature a ℃ or higher of the raw material gas a having a higher vaporization temperature. However, if the gasification temperature is too high, excessive reaction occurs depending on the gas type, and there is a possibility that the risk of corrosion of piping or the like increases. Therefore, the temperature should not be excessively increased, and it is preferable to control the temperature so as to be almost in the vicinity of the vaporization temperature (in the vicinity of the vapor pressure curve). In general, when the vaporization temperature is a ℃, an overtemperature switch (thermal switch) is provided at a temperature slightly higher than the vaporization temperature (usually 10% or less), and whether or not the vaporization temperature is controlled to an appropriate temperature in the vicinity of the vaporization temperature is monitored.

Further, by making the temperatures different between the heating region H1 (set temperature a ℃) and the heating region H2 (set temperature B ℃) there is a concern that cold spots may occur in the gaps between the heating region H1 and the heating region H2, but in the present embodiment, by providing the connecting piece at the boundary between the heating region H1 and the heating region H2, the occurrence of cold spots can be suppressed, and by making the heat conductivities different in the up-down direction between the soaking portions, it is possible to heat the raw material gas a and the raw material gas B to the set temperature or higher in each heating region H, and therefore, the effect of preventing the re-liquefaction of each of the raw material gas a and the raw material gas B is obtained.

In this case, it is needless to say that the final valve installation portion 75 may be separated for each heating region H.

Modification 1

Modification 1 will be described with reference to fig. 9. Fig. 9 differs from fig. 5 in that there is no heating portion. That is, the final valve installation portion 75C shown in fig. 9 has the same configuration as that of fig. 5 except that the final valve group (the aggregate of the plurality of third valves 40) as the third valve group is not heated. In this modification, since both the final valve installation portion 75A (or 75B) and the final valve installation portion 75C are provided, the raw material which is liquid or solid at normal temperature needs to be heated to the vaporization temperature (or sublimation temperature) or higher in order to maintain the vaporization state or the sublimation state, gas is formed through the final valve installation portion 75A (or 75B) and supplied to the process chamber 14A, and fluid (gas) which is gas at normal temperature is supplied to the process chamber 14A through the final valve installation portion 75C.

According to this configuration, the final valve installation portion 75A can be simplified as compared with a case where the entire gas supplied to the process chamber 14A is passed through the final valve installation portion 75A (or 75B) as shown in fig. 5, and the gas that does not need to be heated is also heated. In addition, the space is saved, and the power consumed for uniformly heating at a predetermined temperature can be reduced.

Further, since the fluid (gas) which is a gas at normal temperature is supplied to the process chamber 14A through the final valve installation portion 75C, the final valve installation portion 75A can be made compact, and the number of heaters (the number of total thermocouples) used can be suppressed. In addition, depending on the raw material gas used, the heater can be suppressed from being excessively output.

For example, the final valve setting portion 75 for passing a gas involved in the processing of the substrate, for example, a raw material gas, a reaction gas, a modified gas, or a mixed gas of these gases with an inactive gas, the final valve setting portion for passing an inactive gas not involved in the processing of the substrate, and the final valve setting portion for passing a cleaning gas not involved in the processing of the substrate or a mixed gas of the cleaning gas and the inactive gas may be separately provided. By dispersing in this manner, the final valve installation units can be made compact, and the number of heaters (the total number of thermocouples) used can be suppressed. In addition, depending on the raw material gas used, the heater can be suppressed from being excessively output. The final valve that passes the inert gas that does not participate in the processing of the substrate and the final valve that passes the cleaning gas that does not participate in the processing of the substrate or the mixed gas of the cleaning gas and the inert gas can be referred to as a second valve or a second valve group.

As an example of the present modification shown in fig. 9, it is needless to say that a mode in which heating is not performed even if a heating portion is provided is included. In addition, in order to monitor the temperature of the final valve setting portion 75, a thermocouple or the like is preferably disposed.

Modification 2

Next, a final valve setting unit 75 in which the first valve group 40 is disposed in a modification of the present disclosure will be described with reference to fig. 11. The structure of the first valve 40 and the respective portions constituting the first valve group 40 are the same as those of the respective first valve groups 40 disposed in the final valve installation portion 75 shown in fig. 5, and therefore, the description thereof will be omitted herein, and mainly the points different from those of the final valve installation portion 75 of fig. 5 will be described.

In fig. 11 (a), the number of first valves 40 in the final valve installation portion 75A is the same, and the heater HT4 is used instead of the heater HT2, so that the heater HT1 is eliminated. Here, the heater HT3 and the heater HT4 are configured to form a heating region H3 and a heating region H4, respectively, and the heating region H3 and the heating region H4 have the same range. In practice, the difference in the electric power applied to the heater HT cannot be described in a simple manner, but the following description will be made on the premise that the heater HT3 and the heater HT4 have the same heating capacity. In fig. 11 (B), the heater HT3 and the heater HT4 are the same, but the heating regions H are omitted. In fig. 11, compared with fig. 5, only two heaters HT are provided, and an energy saving effect can be expected.

On the other hand, in fig. 5, the first valve 40 provided in the final valve installation portion 75A can be heated by the heater HT, but in fig. 11, there is a high possibility that the first valve 40 located between the two connection pieces cannot be sufficiently heated by the heater HT. Accordingly, in fig. 11 (B), a structure is considered in which the first valve 40 is not provided between the two coupling pieces.

As shown in fig. 11B, at least the main body portion (valve portion and flange portion) of the first valve 40 is not disposed between the two connecting pieces, and thus the fluid is not allowed to flow. Thereby, the heating region H3 and the heating region H4 can be separated.

Further, although the structure may be such that no connecting piece is provided, if the temperature difference between the unheated portion and the heated portion is too large, there is a concern that heat dissipation between the two connecting pieces becomes large, and therefore, it is more preferable to provide the connecting pieces. In this case, the connecting piece functions as a heat insulating material, and therefore, it is more preferable that no slits, cuts, or the like as shown in fig. 7 are provided.

Example (example)

Next, the structure of the first valve 40 group of the final valve installation portion 75A and the fluid flowing through the first valve will be described with reference to fig. 4, 5, and 11. Although not described here, the final valve installation portion 75B is also similar.

Example 1

Next, in fig. 5, the power ratio of each heating region H formed by the heating of each heater HT is made the same. For example, HT1: HT2: HT3 is expressed as 1:3:3, heating by electric power. In fig. 5, as shown as heating areas H2 and H3, HT2 and HT3 are configured to be able to heat blocks of six first valves 40, respectively, and HT1 is configured to heat blocks of the valve 40 group (two first valves 40). Further, a joint piece is provided at the slit of each heating region (slit of each block). Thereby, the process gas in the final valve installation portion 75A can be heated to a predetermined temperature or higher. Therefore, for example, the gas flowing through each of the first valves 40 can be heated to a temperature equal to or higher than the vaporization temperature (or sublimation temperature) of the gas.

In fig. 5, the types of fluids flowing through the heating regions H2 and H3 formed by the heaters HT2 and HT3 may be different from each other. For example, a block portion, not shown, may be combined with the first valve 40 group constituting the heating region H2 so as to flow the source gas, and a block portion, not shown, may be combined with the heating region H3 so as to flow the cleaning gas. For example, the heating region H2 is adjusted to the vaporization temperature (or sublimation temperature) a of the source gas, and the heating region H3 is adjusted to the vaporization temperature (or sublimation temperature) B of the cleaning gas, so that the processing gas flowing through each of the first valves 40 in the final valve installation portion 75A can be heated to the vaporization temperature (or sublimation temperature) or higher.

In fig. 5, the gap between the heating areas H where the connecting pieces are arranged is a portion which is distant from the heater HT and is difficult to control the temperature. Therefore, a block portion, not shown, may be combined so as to flow a gas existing as a gas at normal temperature, for example, a reactive gas or an inactive gas, in the first valve 40 disposed along the connecting piece disposed between the heating region H2 and the heating region H3. Since the fluid flowing through the first valve 40 provided in the gap between the heating regions H is a fluid which does not need to be heated by the heater HT in the first valve 40, the first valve 40 other than the first valve 40 disposed along the connecting piece may be controlled so as to have a composition equal to or higher than the vaporization temperature (or sublimation temperature) of the process gas. Therefore, improvement of temperature controllability of the process gas flowing in the final valve installation portion 75A can be expected. The first valve 40 may not be provided along the connecting piece arranged between the heating region H2 and the heating region H3, so that the fluid cannot flow. In this case, it is also possible to expect improvement in temperature controllability for the process gas flowing in the final valve installation portion 75A.

In fig. 5, the thermal conductivity of the connecting piece disposed between the heating regions H1 and H2 may be different from the thermal conductivity of the connecting piece disposed between the heating regions H2 and H3. For example, the thermal conductivity may be made different depending on the positional relationship with the heater HT, or the thermal conductivity may be made different depending on the electric power supplied to the heater HT. This can control the fluid flowing through the first valve 40 provided in each heating region H to a predetermined temperature or higher.

Example 2

Next, in fig. 11, the power ratio of each heating region H formed by the heating of each heater HT is made the same as well. For example, HT3: HT4 is represented as 1:1, and heating by electric power. The heating areas H of the heaters HT are denoted by H3 and H4, respectively, and the following description will be made on the premise that the heating areas H of the heaters HT that can be appropriately heated are set to the six amounts of the first valves 40 disposed in the final valve installation portion 75A.

As shown in fig. 11 (a), since the region sandwiched between the two connecting pieces is a region distant from the heating region H3 and the heating region H4, if the raw material as the process gas is circulated through the first valve 40 disposed in this region, the temperature control becomes not smooth, and there is a high possibility that resolidification (or reliquefaction) occurs. Therefore, the flow in this region may be any flow (a flow in a gaseous state at ordinary temperature) that does not require temperature control (or temperature heating), and for example, a reactant gas or an inert gas as a process gas may be circulated.

In this way, since the process gas is circulated in each of the heating regions H3 and H4 and the reactant gas or the inactive gas, which is the process gas, is circulated in the first valve 40 disposed in the region sandwiched between the two connecting pieces, for example, the heating region H3 and the heating region H4 are separated, and therefore, it is possible to separate the gas types such as the source gas as the process gas to be supplied to the heating region H3 and the cleaning gas as the process gas to be supplied to the heating region H4. In addition, two kinds of raw material gases having different sublimation temperatures (vaporization temperatures) may be supplied even if the raw material gases are the same.

As shown in fig. 7, the first valve 40 may not be disposed in a region sandwiched between the two connecting pieces. In this way, since the fluid can be circulated in the region sandwiched between the two connecting pieces having a high possibility of unstable temperature and the fluid can be circulated in the heating region H3 and the heating region H4, the temperature of the fluid flowing in the heating region H3 or the heating region H4 can be controlled, for example, the temperature of the fluid can be set to a predetermined temperature or higher, and therefore the process gas obtained by sublimating the solid raw material or the process gas obtained by vaporizing the liquid raw material can be supplied as the fluid. In addition, even with this configuration, since the heating region H3 and the heating region H4 are separated, the gas types of the process gas flowing through the first valve 40 disposed in the heating region H3 and the first valve 40 disposed in the heating region H4 can be used. In addition, two kinds of raw material gases having different sublimation temperatures (vaporization temperatures) may be supplied even if the raw material gases are the same.

(other embodiments)

The embodiments of the present disclosure have been specifically described above, but the present disclosure is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit thereof.

For example, the final valve installation portions may be provided in a dispersed manner according to the type of gas. Specifically, the final valve installation portions may be provided so as to be dispersed with respect to the gas involved in the processing of the substrate, such as the source gas, the reaction gas, and the modifying gas. Further, the temperature may be controlled to be different from each other. On the other hand, if the vaporization temperature (sublimation temperature) is almost the same regardless of the kind of the gas, the gas involved in the processing of the substrate and the gas not involved in the processing of the substrate may be supplied to the processing chamber through the same final valve installation portion.

For example, although a vapor chamber (vapor chamber) is provided for each heating region, a common vapor chamber (vapor chamber) may be provided for the heating regions, and a cutout may be provided at the boundary between the heating regions to reduce the heat transfer area. However, in this case, there is a problem in the strength of the final valve installation portion, and it is necessary to dispose a reinforcing material or the like in the notched portion of the boundary portion. Further, the reinforcing material is preferably a heat insulating member.

In the above embodiment, N is used as the pair ₂ The gas is described as an example of an inert gas, but the inert gas is not limited thereto, and rare gases such as Ar gas, he gas, ne gas, xe gas, and the like may be used, and one or more of these rare gases may be used. However, in this case, a rare gas source needs to be prepared.

Nitrous oxide (N) can be used as the nitrogen-containing gas ₂ O) gas, nitric Oxide (NO) gas, nitrogen dioxide (NO) ₂ ) Gas, ammonia (NH) ₃ ) One or more of gas and the like. As oxygen-containingThe gas may be oxygen (O) ₂ ) Gas, ozone (O) ₃ ) One or more of gas and the like.

The reactant contained in the reaction gas is not limited to the nitrogen-containing gas and the oxygen-containing gas, and other types of thin films may be formed using a gas that reacts with the source electrode to perform a film treatment. Further, the film formation process may be performed using three or more kinds of reaction gases.

In addition, for example, in the above embodiments, the film forming process in the semiconductor device is exemplified as the process performed by the substrate processing apparatus, but the present disclosure is not limited thereto. That is, the film formation process may be a process of forming an oxide film or a nitride film, or a process of forming a film containing a metal. The specific content of the substrate processing is not limited, and the substrate processing can be applied not only to film formation processing but also to other substrate processing such as annealing processing, oxidation processing, nitriding processing, diffusion processing, and photolithography processing.

The present disclosure is applicable to other substrate processing apparatuses such as an annealing apparatus, an oxidation apparatus, a nitriding apparatus, an exposure apparatus, a coating apparatus, a drying apparatus, a heating apparatus, and a processing apparatus using plasma. In addition, the present disclosure may also be mixed with these devices.

In the present embodiment, the semiconductor manufacturing process is described, but the present disclosure is not limited thereto. For example, the present disclosure can be applied to substrate processing such as a liquid crystal device manufacturing process, a solar cell manufacturing process, a light emitting device manufacturing process, a glass substrate processing process, a ceramic substrate processing process, and a conductive substrate processing process.

In addition, a part of the structure of one embodiment may be replaced with the structure of another embodiment, and the structure of another embodiment may be added to the structure of one embodiment. In addition, other structures may be added, deleted, or replaced for a part of the structures of the embodiments.

Claims

1. A gas supply system, comprising:

a first valve that opens and closes a flow path for supplying a fluid involved in the processing of the substrate to the processing chamber;

a plurality of heating zones for heating a plurality of the first valves;

a soaking unit provided in the plurality of heating regions; and

and a member which is provided between the heating regions and adjusts heat conduction between the soaking portions.

2. A gas supply system according to claim 1, wherein,

The members are configured to have different thermal conductivities in the up-down direction of the soaking section.

3. A gas supply system according to claim 1, wherein,

the soaking part is arranged in each heating area.

4. A gas supply system according to claim 1, wherein,

the first valve is disposed adjacent to the process chamber.

5. A gas supply system according to claim 4, wherein,

the first valve is provided at a position closest to the processing chamber in a pipe communicating with the processing chamber.

6. A gas supply system according to claim 1, wherein,

there are also a plurality of heating units for heating the plurality of first valves,

the heating areas are formed at each of the heating units.

7. A gas supply system according to claim 6, wherein,

the heating unit is configured to be capable of individually heating the heating regions.

8. A gas supply system according to claim 6, wherein,

the heating unit is configured to be capable of heating such that each heating region has a set temperature.

9. A gas supply system according to claim 6, wherein,

The heating means is configured to be capable of heating at a set temperature according to the type of gas flowing through a flow path provided in the heating zone.

10. A gas supply system according to claim 9, wherein,

the temperature set according to the kind of gas flowing through the flow path provided in the heating area is different.

11. A gas supply system according to claim 1, wherein,

the fluid involved in the processing of the substrate includes a processing gas including a raw material gas, a reaction gas, a modifying gas, or the like, or a mixed gas of these gases, or a mixed gas of a processing gas and an inactive gas.

12. A gas supply system according to claim 1, wherein,

a block portion is provided, the block portion being provided with a flow path through which the fluid flows,

the soaking part is arranged below the block part.

13. A gas supply system according to claim 12, wherein,

a main body part provided with a valve part for opening and closing the fluid flow path,

the main body portion is provided with a flow path communicating the flow path provided in the block portion and the valve portion.

14. A gas supply system according to claim 1, wherein,

there is also a second valve set for supplying fluid that does not participate in the processing of the substrate.

15. A gas supply system according to claim 14, wherein,

the fluid that does not participate in the processing of the substrate is an inert gas.

16. A substrate processing apparatus is provided with a gas supply system,

the gas supply system includes:

a plurality of heating zones for heating a plurality of the first valves;

a soaking unit provided in the plurality of heating regions; and

17. A method for manufacturing a semiconductor device, characterized in that,

comprises a step of supplying a fluid from a gas supply system to a substrate,

the gas supply system includes:

a first valve that opens and closes a flow path for supplying the fluid involved in the processing of the substrate to a processing chamber;

a plurality of heating zones for heating a plurality of the first valves;

a soaking unit provided in the plurality of heating regions; and