CN116978792B - Preparation method of packaging structure - Google Patents
Preparation method of packaging structure Download PDFInfo
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- CN116978792B CN116978792B CN202310990213.2A CN202310990213A CN116978792B CN 116978792 B CN116978792 B CN 116978792B CN 202310990213 A CN202310990213 A CN 202310990213A CN 116978792 B CN116978792 B CN 116978792B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 10
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000010410 layer Substances 0.000 claims abstract description 339
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 133
- 239000012790 adhesive layer Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000003292 glue Substances 0.000 claims description 64
- 238000000576 coating method Methods 0.000 claims description 20
- 239000004925 Acrylic resin Substances 0.000 claims description 15
- 229920000178 Acrylic resin Polymers 0.000 claims description 15
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- -1 acrylic ester Chemical class 0.000 claims description 5
- 239000003504 photosensitizing agent Substances 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000002356 single layer Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0231—Manufacturing methods of the redistribution layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a preparation method of a packaging structure, which comprises the following steps: forming a rewiring structure on the support structure, the method of forming the rewiring structure comprising: sequentially forming laminated first to Mth rewiring unit layers; the step of forming an optional mth rewiring unit layer includes: forming a patterned mth sacrificial photoresist layer, wherein the mth sacrificial photoresist layer is provided with an mth opening; forming an mth rewiring layer in the mth opening; removing the mth sacrificial photoresist layer; then, forming an mth dielectric adhesive layer surrounding the side wall surface of the mth rewiring layer, wherein the mth dielectric adhesive layer does not cover the top surface of the mth rewiring layer; the elastic modulus of the m dielectric adhesive layer is larger than that of the m sacrificial photoresist layer, and the resolution of the m sacrificial photoresist layer is larger than that of the m dielectric adhesive layer under the same exposure condition. The figure quality of any m-th rewiring layer and the mechanical property of any m-th dielectric adhesive layer are considered.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of a packaging structure.
Background
The rewiring structure comprises a dielectric adhesive layer and a conductive metal layer. The existing preparation process of the rewiring structure comprises the following steps: and forming a dielectric adhesive layer by spin coating photosensitive Polyimide (PI) adhesive, forming an opening in the dielectric adhesive layer by a photoetching process, and filling metal into the opening by sputtering, electroplating and other processes to form a conductive metal layer.
Because of product performance requirements, some of the rewiring structures in the chip packaging structures need to be provided with thicker dielectric adhesive layers, for example, the thickness of each dielectric adhesive layer is more than 20 micrometers. However, the photolithography process cannot open an opening with an aspect ratio greater than 1 on a thick dielectric glue layer. Therefore, when the device is arranged, the diameter of the openings and the distance between the openings can only be increased, so that the openings can penetrate through the dielectric adhesive layer. However, the increase of the diameter of the openings and the increase of the distance between the openings tend to limit the structure and pattern arrangement of the conductive metal layer, resulting in limited performance. It is difficult to consider the mechanical properties of the dielectric adhesive layer of the pattern quality of the conductive metal layer.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to solve the problem that the mechanical property of the dielectric adhesive layer of the pattern quality of the conductive metal layer is difficult to be considered, so as to provide a preparation method of the packaging structure.
The invention provides a preparation method of a packaging structure, which comprises the following steps: providing a support structure; forming a rewiring structure on the support structure, the method of forming the rewiring structure comprising: sequentially forming laminated first to Mth rewiring unit layers, M being an integer greater than or equal to 2; the step of forming an optional mth rewiring unit layer includes: forming a patterned mth sacrificial photoresist layer, wherein the mth sacrificial photoresist layer is provided with an mth opening; forming an mth rewiring layer in the mth opening; after forming the mth rewiring layer, removing the mth sacrificial photoresist layer; after removing the mth sacrificial photoresist layer, forming an mth dielectric photoresist layer surrounding the sidewall surface of the mth rewiring layer, wherein the mth dielectric photoresist layer does not cover the top surface of the mth rewiring layer; the elastic modulus of the m dielectric adhesive layer is larger than that of the m sacrificial photoresist layer, and the resolution of the m sacrificial photoresist layer is larger than that of the m dielectric adhesive layer under the same exposure condition.
Optionally, the step of forming an optional mth rewiring unit layer further includes: forming an mth initial seed layer before forming an mth sacrificial photoresist layer; in the step of forming the mth sacrificial photoresist layer, the mth sacrificial photoresist layer is positioned on one side surface of a part of the mth initial seed layer, which is away from the supporting structure; removing the m initial seed layer uncovered by the m-th rewiring layer after removing the m sacrificial photoresist layer and before forming the m dielectric photoresist layer, so that the m initial seed layer at the bottom of the m-th rewiring layer forms the m-th seed layer; in the step of forming the mth dielectric glue layer, the mth dielectric glue layer also surrounds the sidewall surface of the mth seed layer.
Optionally, the step of forming the mth dielectric glue layer includes: forming an mth initial dielectric adhesive layer surrounding the sidewall surface of the mth rewiring layer and the top surface of the mth rewiring layer by adopting a coating process; curing the m-th initial dielectric adhesive layer; and after the m-th initial dielectric adhesive layer is cured, grinding the m-th initial dielectric adhesive layer until the top surface of the m-th rewiring layer is exposed, so that the m-th initial dielectric adhesive layer forms the m-th dielectric adhesive layer.
Optionally, in the step of forming the mth initial dielectric glue layer surrounding the sidewall surface of the mth rewiring layer and the top surface of the mth rewiring layer by using a coating process, the material composition of the mth initial dielectric glue layer includes: propylene glycol methyl ether acetate, acrylic resin, 3-methoxybutyl acetate and a photoinitiator, wherein the mass percent of the propylene glycol methyl ether acetate is 60% -70%, the mass percent of the acrylic resin is 20% -30%, the mass percent of the 3-methoxybutyl acetate is 1% -10%, and the mass percent of the photoinitiator is 1% -10%.
Optionally, the step of forming the patterned mth sacrificial photoresist layer includes: forming an mth initial sacrificial photoresist layer by adopting a coating process; exposing and developing the mth initial sacrificial photoresist layer to form a patterned mth sacrificial photoresist layer.
Optionally, in the step of forming the mth initial sacrificial photoresist layer by using a coating process, the material composition of the mth initial sacrificial photoresist layer includes: the ultraviolet light-sensitive adhesive comprises, by mass, 30% -40% of acrylic resin, 30% -40% of propylene glycol methyl ether acetate, 6% -25% of acrylic ester and 4% -11% of a photosensitizer.
Optionally, the elastic modulus of the mth dielectric glue layer is greater than or equal to 1GPa.
Optionally, the resolution of the mth sacrificial photoresist layer is 2-100 times the resolution of the mth dielectric photoresist layer.
Optionally, the dielectric constant of the mth dielectric glue layer is less than the dielectric constant of the mth sacrificial photoresist layer.
Optionally, the dielectric constant of the mth dielectric glue layer is less than or equal to 3.
Optionally, the thickness of the mth sacrificial photoresist layer is 4 micrometers to 130 micrometers; the thickness of the m dielectric glue layer is 4 micrometers-130 micrometers.
Optionally, the aspect ratio of any mth opening is greater than 1 and less than 2.
Optionally, the support structure is a temporary carrier or a front-end-of-line device.
The technical scheme of the invention has the following beneficial effects:
According to the preparation method of the packaging structure, the m-th sacrificial photoresist layer adopts the high-resolution photoresist, and the m-th opening with regular opening morphology is prepared by utilizing the excellent opening capability of the high-resolution photoresist, so that the phenomenon that the m-th opening cannot longitudinally penetrate through the photoresist in the photoetching process with thicker thickness and smaller aperture and pitch is avoided, and particularly, the phenomenon that adjacent m-th openings are communicated in the m-th opening with smaller pitch is avoided, so that the pattern quality of the m-th rewiring layer is better. The elastic modulus of the mth dielectric adhesive layer is larger than that of the mth sacrificial photoresist layer, so that the mth dielectric adhesive layer has good mechanical property and high supporting capacity. Thus, the figure quality of any m-th rewiring layer and the mechanical property of any m-th dielectric adhesive layer are both considered.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flowchart of a method for manufacturing a package structure according to an embodiment of the present invention;
Fig. 2 to 13 are schematic structural diagrams illustrating a manufacturing process of a package structure according to an embodiment of the invention.
Detailed Description
Through researches, the dielectric adhesive layer in the rewiring structure has limited photoetching capability due to considering dielectric property and mechanical property and photosensitive property, and has poorer photoetching capability compared with the photoresist which is specially focused on high resolution; it is difficult to form openings in the dielectric glue layer or the quality of the openings is poor and the pattern quality of the conductive metal layer is poor. Resulting in mechanical properties of the dielectric glue layer that make it difficult to compromise the pattern quality of the conductive metal layer.
On the basis, the invention provides a preparation method of the packaging structure, which takes the opening quality and the mechanical property of the dielectric adhesive layer into consideration.
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The present embodiment provides a package structure, referring to fig. 1, including:
Step S1: providing a support structure;
step S2: forming a rewiring structure on the support structure, the method of forming the rewiring structure comprising: sequentially forming laminated first to Mth rewiring unit layers, M being an integer greater than or equal to 2;
the step of forming an optional mth rewiring unit layer includes: forming a patterned mth sacrificial photoresist layer, wherein the mth sacrificial photoresist layer is provided with an mth opening; forming an mth rewiring layer in the mth opening; after forming the mth rewiring layer, removing the mth sacrificial photoresist layer; after removing the mth sacrificial photoresist layer, forming an mth dielectric photoresist layer surrounding the sidewall surface of the mth rewiring layer, wherein the mth dielectric photoresist layer does not cover the top surface of the mth rewiring layer; the elastic modulus of the m dielectric adhesive layer is larger than that of the m sacrificial photoresist layer, and the resolution of the m sacrificial photoresist layer is larger than that of the m dielectric adhesive layer under the same exposure condition.
In this embodiment, the mth sacrificial photoresist layer uses high resolution photoresist, and uses the excellent opening capability of the high resolution photoresist, so as to prepare the mth opening with regular opening morphology, thereby avoiding the phenomenon that the mth opening cannot longitudinally penetrate through the photoresist in the photolithography process with thicker thickness and smaller aperture and pitch, and especially avoiding the phenomenon that adjacent mth openings are communicated in the mth opening with smaller pitch, so that the pattern quality of the mth rewiring layer is better. The elastic modulus of the mth dielectric adhesive layer is larger than that of the mth sacrificial photoresist layer, so that the mth dielectric adhesive layer has good mechanical property and high supporting capacity. Thus, the figure quality of any m-th rewiring layer and the mechanical property of any m-th dielectric adhesive layer are both considered.
The step of forming an optional mth rewiring unit layer further comprises: forming an mth initial seed layer before forming an mth sacrificial photoresist layer; in the step of forming the mth sacrificial photoresist layer, the mth sacrificial photoresist layer is positioned on one side surface of a part of the mth initial seed layer, which is away from the supporting structure; removing the m initial seed layer uncovered by the m-th rewiring layer after removing the m sacrificial photoresist layer and before forming the m dielectric photoresist layer, so that the m initial seed layer at the bottom of the m-th rewiring layer forms the m-th seed layer; in the step of forming the mth dielectric glue layer, the mth dielectric glue layer also surrounds the sidewall surface of the mth seed layer.
The step of forming the mth dielectric glue layer comprises the following steps: forming an mth initial dielectric adhesive layer surrounding the sidewall surface of the mth rewiring layer and the top surface of the mth rewiring layer by adopting a coating process; curing the m-th initial dielectric adhesive layer; and after the m-th initial dielectric adhesive layer is cured, grinding the m-th initial dielectric adhesive layer until the top surface of the m-th rewiring layer is exposed, so that the m-th initial dielectric adhesive layer forms the m-th dielectric adhesive layer.
The step of forming a patterned mth sacrificial photoresist layer includes: forming an mth initial sacrificial photoresist layer by adopting a coating process; exposing and developing the mth initial sacrificial photoresist layer to form a patterned mth sacrificial photoresist layer.
In the step of forming the mth initial sacrificial photoresist layer by using the coating process, the mth initial sacrificial photoresist layer comprises the following material components: the ultraviolet light-sensitive adhesive comprises, by mass, 30% -40% of acrylic resin, 30% -40% of propylene glycol methyl ether acetate, 6% -25% of acrylic ester and 4% -11% of a photosensitizer.
In the step of forming the mth initial dielectric glue layer surrounding the sidewall surface of the mth re-wiring layer and the top surface of the mth re-wiring layer by using a coating process, the material composition of the mth initial dielectric glue layer includes: propylene glycol methyl ether acetate, acrylic resin, 3-methoxybutyl acetate and a photoinitiator, wherein the mass percent of the propylene glycol methyl ether acetate is 60% -70%, the mass percent of the acrylic resin is 20% -30%, the mass percent of the 3-methoxybutyl acetate is 1% -10%, and the mass percent of the photoinitiator is 1% -10%.
The resolution of the mth sacrificial photoresist layer is 2-100 times, e.g., 10-20-30-50-60-80-100-times, the resolution of the mth dielectric photoresist layer.
The following describes in detail the manufacturing method of the package structure of the present embodiment with reference to fig. 2 to 13.
Referring to fig. 2, a support structure 3 is provided.
The support structure 3 is a temporary carrier or a front end process device.
In this embodiment, the support structure 3 is taken as a temporary carrier plate as an example. The temporary carrier has a bonding adhesive film 31 on one side surface.
Next, a re-wiring structure is formed on the support structure, the method of forming the re-wiring structure comprising: sequentially forming laminated first to Mth rewiring unit layers, M being an integer greater than or equal to 2; in the present embodiment, taking M equal to 2 as an example. In other embodiments, M may be an integer greater than or equal to 3.
With continued reference to fig. 2, a first initial seed layer 4 is formed on the support structure 3.
Specifically, the first initial seed layer 4 is formed on a surface of a side of the bonding adhesive film 31 facing away from the support structure 3.
The process of forming the first preliminary seed layer 4 includes a physical vapor deposition process, such as a sputtering process.
The first initial seed layer 4 is of a single-layer structure or a multi-layer structure. When the first initial seed layer 4 is of a single layer structure, the material of the first initial seed layer 4 includes copper. When the first initial seed layer 4 is a two-layer structure, the first initial seed layer 4 includes a titanium layer and a copper layer stacked from bottom to top, the titanium layer in the first initial seed layer 4 is used to increase the bonding force between the first initial seed layer 4 and the support structure 3, and the titanium layer is located between the copper layer and the support structure 3 in the first initial seed layer 4.
Referring to fig. 3, a patterned first sacrificial photoresist layer 5 is formed on a portion of a side surface of the first initial seed layer 4 facing away from the support structure 3, the first sacrificial photoresist layer 5 having a first opening 51 therein.
The step of forming the patterned first sacrificial photoresist layer 5 includes: forming a first initial sacrificial photoresist layer by adopting a coating process, and particularly forming the first initial sacrificial photoresist layer on the surface of one side of part of the first initial seed layer 4, which faces away from the support structure 3; the first initial sacrificial photoresist layer is exposed and developed such that the first initial sacrificial photoresist layer forms a patterned first sacrificial photoresist layer 5, the first sacrificial photoresist layer 5 having a first opening 51 therein.
In the step of forming the first initial sacrificial photoresist layer using the coating process, the material composition of the first initial sacrificial photoresist layer includes: the ultraviolet light-sensitive adhesive comprises, by mass, 30% -40% of acrylic resin, 30% -40% of propylene glycol methyl ether acetate, 6% -25% of acrylic ester and 4% -11% of a photosensitizer.
In one embodiment, the thickness of the first sacrificial photoresist layer 5 is 4 microns to 130 microns.
In one embodiment, the aspect ratio of the first opening 51 is greater than 1 and less than 2.
The first sacrificial photoresist layer 5 adopts high-resolution photoresist, and the excellent opening capability of the high-resolution photoresist is utilized, so that the first opening 51 with regular opening morphology is prepared, the phenomenon that the first opening 51 cannot longitudinally penetrate through the photoresist in the photoetching process with thicker thickness and smaller aperture and pitch is avoided, and particularly, the phenomenon that adjacent first openings 51 are communicated in the first opening 51 with smaller pitch can be avoided.
Referring to fig. 4, a first re-wiring layer 11 is formed in the first opening 51.
The process of forming the first re-wiring layer 11 includes an electroplating process or an electroless plating process.
The material of the first re-wiring layer 11 includes copper.
Referring to fig. 5, after the first re-wiring layer 11 is formed, the first sacrificial photoresist layer 5 is removed.
In this embodiment, the method further includes: after the removal of the first sacrificial photoresist layer 5, the first initial seed layer 4 not covered by the first re-wiring layer 11 is removed, so that the first initial seed layer 4 at the bottom of the first re-wiring layer 11 constitutes a first seed layer 4a.
Referring to fig. 6 and 7, after the first sacrificial photoresist layer 5 is removed, a first dielectric photoresist layer 21a surrounding the sidewall surface of the first re-wiring layer 11 is formed, the first dielectric photoresist layer 21a not covering the top surface of the first re-wiring layer 11; the elastic modulus of the first dielectric glue layer 21a is greater than the elastic modulus of the first sacrificial photoresist layer 5, and the resolution of the first sacrificial photoresist layer 5 is greater than the resolution of the first dielectric glue layer 21a under the same exposure conditions.
In the step of forming the first dielectric glue layer 21a, the first dielectric glue layer 21a also surrounds the sidewall surfaces of the first seed layer 4 a.
Referring to fig. 6, a first initial dielectric glue layer 21 surrounding the sidewall surface of the first re-wiring layer 11 and the top surface of the first re-wiring layer 11 is formed using a coating process; the first initial dielectric glue layer 21 is subjected to a curing process.
In the step of forming the first initial dielectric glue layer 21 surrounding the sidewall surface of the first re-wiring layer 11 and the top surface of the first re-wiring layer 11 using a coating process, the material composition of the first initial dielectric glue layer 21 includes: propylene glycol methyl ether acetate, acrylic resin, 3-methoxybutyl acetate and a photoinitiator, wherein the mass percent of the propylene glycol methyl ether acetate is 60% -70%, the mass percent of the acrylic resin is 20% -30%, the mass percent of the 3-methoxybutyl acetate is 1% -10%, and the mass percent of the photoinitiator is 1% -10%.
Referring to fig. 7, after the curing process is performed on the first initial dielectric glue layer 21, the first initial dielectric glue layer 21 is ground until the top surface of the first re-wiring layer 11 is exposed, so that the first initial dielectric glue layer 21 forms a first dielectric glue layer 21a.
In one embodiment, the first dielectric glue layer 21a has an elastic modulus of greater than or equal to 1GPa. The elastic modulus of the first dielectric adhesive layer 21a is larger, so that the mechanical property of the first dielectric adhesive layer 21a is better, and the supporting capability is higher.
In one embodiment, the resolution of the first sacrificial photoresist layer 5 is 2 to 100 times the resolution of the first dielectric photoresist layer 21a under the same exposure conditions.
In one embodiment, the dielectric constant of the first dielectric glue layer 21a is smaller than the dielectric constant of the first sacrificial photoresist layer 5. The dielectric constant of the first dielectric glue layer 21a is smaller, so that the loss of the electrical signal is smaller.
In one embodiment, the dielectric constant of the first dielectric glue layer 21a is less than or equal to 3.
In one embodiment, the thickness of the first dielectric glue layer 21a is 4 microns to 130 microns.
Referring to fig. 8, a second initial seed layer 6 is formed on a side surface of the first dielectric glue layer 21a and the first redistribution layer 11 facing away from the support structure 3.
The process of forming the second initial seed layer 6 is a physical vapor deposition process, such as a sputtering process.
The second initial seed layer 6 is of a single-layer structure or a multi-layer structure. When the second initial seed layer 6 is of a single layer structure, the material of the second initial seed layer 6 includes copper. When the second initial seed layer 6 has a two-layer structure, the second initial seed layer 6 includes a titanium layer and a copper layer stacked from bottom to top, the titanium layer in the second initial seed layer 6 is used to increase the bonding force between the second initial seed layer 6 and the first dielectric glue layer 21a and the first redistribution layer 11, and the titanium layer is located between the copper layer and the first dielectric glue layer 21a and between the copper layer and the first redistribution layer 11 in the second initial seed layer 6.
Referring to fig. 9, a patterned second sacrificial photoresist layer 7 is formed on a surface of a portion of the second initial seed layer 6 facing away from the support structure 3.
The step of forming the patterned second sacrificial photoresist layer 7 comprises: forming a second initial sacrificial photoresist layer on the side of the first dielectric glue layer 21a and the first redistribution layer 11 facing away from the support structure 3 using a coating process; the second initial sacrificial photoresist layer is exposed and developed such that the second initial sacrificial photoresist layer forms a patterned second sacrificial photoresist layer 7, the second sacrificial photoresist layer 7 having a second opening 71 therein.
In the step of forming the second initial sacrificial photoresist layer using the coating process, the material composition of the second initial sacrificial photoresist layer includes: the ultraviolet light-sensitive adhesive comprises, by mass, 30% -40% of acrylic resin, 30% -40% of propylene glycol methyl ether acetate, 6% -25% of acrylic ester and 4% -11% of a photosensitizer.
In one embodiment, the second sacrificial photoresist layer has a thickness of 4 microns to 130 microns.
In one embodiment, the aspect ratio of the second opening 71 is greater than 1 and less than 2.
The second sacrificial photoresist layer 7 adopts high-resolution photoresist, and the excellent opening capability of the high-resolution photoresist is utilized, so that the second opening 71 with regular opening morphology is prepared, the phenomenon that the second opening 71 cannot longitudinally penetrate through the photoresist in the photoetching process with thicker thickness and smaller aperture and pitch is avoided, and particularly, the phenomenon that adjacent second openings 71 are communicated in the second opening 71 with smaller pitch can be avoided.
Referring to fig. 10, a second redistribution layer 12 is formed in the second opening 71.
The process of forming the second redistribution layer 12 includes an electroplating process or an electroless plating process.
The material of the second redistribution layer 12 includes copper.
Referring to fig. 11, after the second re-wiring layer 12 is formed, the second sacrificial photoresist layer 7 is removed.
In this embodiment, the method further includes: after removing the second sacrificial photoresist layer 7, the second initial seed layer 6 uncovered by the second redistribution layer 12 is removed, so that the second initial seed layer 6 at the bottom of the second redistribution layer 12 constitutes a second seed layer 6a.
Referring to fig. 12 to 13, after the second sacrificial photoresist layer 7 is removed, a second dielectric photoresist layer 22a surrounding the sidewall surfaces of the second re-wiring layer 12 is formed, the second dielectric photoresist layer 22a not covering the top surface of the second re-wiring layer 12; the second dielectric glue layer 22a has a modulus of elasticity that is greater than the modulus of elasticity of the second sacrificial photoresist layer 7, and the resolution of the second sacrificial photoresist layer 7 is greater than the resolution of the second dielectric glue layer 22a under the same exposure conditions.
In the step of forming the second dielectric glue layer 22a, the second dielectric glue layer 22a also surrounds the sidewall surfaces of the second seed layer 6 a.
Referring to fig. 12, a coating process is used to form a second initial dielectric glue layer 22 surrounding the sidewall surfaces of the second redistribution layer 12 and the top surface of the second redistribution layer 12; the second initial dielectric glue layer 22 is cured.
In the step of forming the second initial dielectric glue layer 22 surrounding the sidewall surfaces of the second redistribution layer 12 and the top surface of the second redistribution layer 12 using a coating process, the material composition of the second initial dielectric glue layer 22 includes: propylene glycol methyl ether acetate, acrylic resin, 3-methoxybutyl acetate and a photoinitiator, wherein the mass percent of the propylene glycol methyl ether acetate is 60% -70%, the mass percent of the acrylic resin is 20% -30%, the mass percent of the 3-methoxybutyl acetate is 1% -10%, and the mass percent of the photoinitiator is 1% -10%.
Referring to fig. 13, after the second initial dielectric glue layer 22 is cured, the second initial dielectric glue layer 22 is ground until the top surface of the second redistribution layer 12 is exposed, so that the second initial dielectric glue layer 22 forms a second dielectric glue layer 22a.
In one embodiment, the second dielectric glue layer 22a has an elastic modulus of greater than or equal to 1GPa. The elastic modulus of the second dielectric adhesive layer 22a is larger, so that the mechanical property of the second dielectric adhesive layer 22a is better, and the supporting capability is higher.
In one embodiment, the resolution of the second sacrificial photoresist layer 7 is 2 to 100 times the resolution of the second dielectric photoresist layer 22a under the same exposure conditions.
In one embodiment, the dielectric constant of the second dielectric glue layer 22a is smaller than the dielectric constant of the second sacrificial photoresist layer 7. The second dielectric glue layer 22a has a smaller dielectric constant and thus has less loss of electrical signals.
In one embodiment, the dielectric constant of the second dielectric glue layer 22a is less than or equal to 3.
In one embodiment, the thickness of the second dielectric glue layer 22a is 4 microns to 130 microns.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (12)
1. The preparation method of the packaging structure is characterized by comprising the following steps:
providing a support structure;
Forming a rewiring structure on the support structure, the method of forming the rewiring structure comprising: sequentially forming laminated first to Mth rewiring unit layers, M being an integer greater than or equal to 2;
The step of forming an optional mth rewiring unit layer includes: forming a patterned mth sacrificial photoresist layer, wherein the mth sacrificial photoresist layer is provided with an mth opening; forming an mth rewiring layer in the mth opening; after forming the mth rewiring layer, removing the mth sacrificial photoresist layer; after removing the mth sacrificial photoresist layer, forming an mth dielectric photoresist layer surrounding the sidewall surface of the mth rewiring layer, wherein the mth dielectric photoresist layer does not cover the top surface of the mth rewiring layer; the elastic modulus of the mth dielectric adhesive layer is larger than that of the mth sacrificial photoresist layer, and the resolution of the mth sacrificial photoresist layer is larger than that of the mth dielectric adhesive layer under the same exposure condition;
The step of forming the mth dielectric glue layer comprises the following steps: forming an mth initial dielectric adhesive layer surrounding the sidewall surface of the mth rewiring layer and the top surface of the mth rewiring layer by adopting a coating process; curing the m-th initial dielectric adhesive layer; and after the m-th initial dielectric adhesive layer is cured, grinding the m-th initial dielectric adhesive layer until the top surface of the m-th rewiring layer is exposed, so that the m-th initial dielectric adhesive layer forms the m-th dielectric adhesive layer.
2. The method of manufacturing a package structure according to claim 1, wherein the step of forming an arbitrary mth rewiring unit layer further comprises: forming an mth initial seed layer before forming an mth sacrificial photoresist layer; in the step of forming the mth sacrificial photoresist layer, the mth sacrificial photoresist layer is positioned on one side surface of a part of the mth initial seed layer, which is away from the supporting structure; removing the m initial seed layer uncovered by the m-th rewiring layer after removing the m sacrificial photoresist layer and before forming the m dielectric photoresist layer, so that the m initial seed layer at the bottom of the m-th rewiring layer forms the m-th seed layer; in the step of forming the mth dielectric glue layer, the mth dielectric glue layer also surrounds the sidewall surface of the mth seed layer.
3. The method of manufacturing a package structure according to claim 1, wherein in the step of forming the mth initial dielectric glue layer surrounding the sidewall surface of the mth re-wiring layer and the top surface of the mth re-wiring layer by using a coating process, a material composition of the mth initial dielectric glue layer includes: propylene glycol methyl ether acetate, acrylic resin, 3-methoxybutyl acetate and a photoinitiator, wherein the mass percent of the propylene glycol methyl ether acetate is 60% -70%, the mass percent of the acrylic resin is 20% -30%, the mass percent of the 3-methoxybutyl acetate is 1% -10%, and the mass percent of the photoinitiator is 1% -10%.
4. The method of claim 1, wherein the step of forming a patterned mth sacrificial photoresist layer comprises: forming an mth initial sacrificial photoresist layer by adopting a coating process; exposing and developing the mth initial sacrificial photoresist layer to form a patterned mth sacrificial photoresist layer.
5. The method of manufacturing a package structure according to claim 4, wherein in the step of forming the mth initial sacrificial photoresist layer using a coating process, the material composition of the mth initial sacrificial photoresist layer includes: the ultraviolet light-sensitive adhesive comprises, by mass, 30% -40% of acrylic resin, 30% -40% of propylene glycol methyl ether acetate, 6% -25% of acrylic ester and 4% -11% of a photosensitizer.
6. The method of claim 1, wherein the m-th dielectric glue layer has an elastic modulus greater than or equal to 1GPa.
7. The method of claim 1, wherein the resolution of the mth sacrificial photoresist layer is 2-100 times the resolution of the mth dielectric photoresist layer.
8. The method of claim 1, wherein the dielectric constant of the mth dielectric glue layer is less than the dielectric constant of the mth sacrificial photoresist layer.
9. The method of claim 1 or 8, wherein the m-th dielectric glue layer has a dielectric constant less than or equal to 3.
10. The method of manufacturing a package structure according to claim 1, wherein the thickness of the mth sacrificial photoresist layer is 4-130 microns; the thickness of the m dielectric glue layer is 4 micrometers-130 micrometers.
11. The method of manufacturing a package according to claim 1, wherein an aspect ratio of any mth opening is greater than or equal to 1 and less than 2.
12. The method of claim 1, wherein the support structure is a temporary carrier or a front-end-of-line device.
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| CN108269766A (en) * | 2017-12-20 | 2018-07-10 | 深南电路股份有限公司 | A kind of ultra-thin packed substrate structure and its processing method |
| CN111856889A (en) * | 2020-07-03 | 2020-10-30 | 儒芯微电子材料（上海）有限公司 | Method for enhancing resolution of photoetching pattern |
| CN114709170A (en) * | 2022-03-28 | 2022-07-05 | 长电集成电路(绍兴)有限公司 | Multilayer wiring layer structure and preparation method thereof |
| CN116169031A (en) * | 2023-04-24 | 2023-05-26 | 长电集成电路(绍兴)有限公司 | Preparation method of chip packaging structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108269766A (en) * | 2017-12-20 | 2018-07-10 | 深南电路股份有限公司 | A kind of ultra-thin packed substrate structure and its processing method |
| CN111856889A (en) * | 2020-07-03 | 2020-10-30 | 儒芯微电子材料（上海）有限公司 | Method for enhancing resolution of photoetching pattern |
| CN114709170A (en) * | 2022-03-28 | 2022-07-05 | 长电集成电路(绍兴)有限公司 | Multilayer wiring layer structure and preparation method thereof |
| CN116169031A (en) * | 2023-04-24 | 2023-05-26 | 长电集成电路(绍兴)有限公司 | Preparation method of chip packaging structure |
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