CN116978766A - Die surface treatment device and die bonding system having the same - Google Patents
Die surface treatment device and die bonding system having the same Download PDFInfo
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- CN116978766A CN116978766A CN202210438866.5A CN202210438866A CN116978766A CN 116978766 A CN116978766 A CN 116978766A CN 202210438866 A CN202210438866 A CN 202210438866A CN 116978766 A CN116978766 A CN 116978766A
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- 238000004381 surface treatment Methods 0.000 title claims abstract description 50
- 238000011282 treatment Methods 0.000 claims abstract description 28
- 230000009467 reduction Effects 0.000 claims abstract description 20
- 210000002381 plasma Anatomy 0.000 claims description 244
- 238000000034 method Methods 0.000 claims description 92
- 230000008569 process Effects 0.000 claims description 87
- 239000007789 gas Substances 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000009736 wetting Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000004913 activation Effects 0.000 abstract description 11
- 230000009977 dual effect Effects 0.000 abstract description 8
- 238000001994 activation Methods 0.000 description 17
- 238000011946 reduction process Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Wire Bonding (AREA)
Abstract
The present invention provides a die surface treatment apparatus and a die bonding system having the same that sequentially perform a reduction treatment and an activation treatment for a die in a dual zone. The die surface treatment apparatus includes: a stage for supporting the die; a first plasma generating section which is provided on a moving path of the die and which performs a reduction treatment on a surface of the die in a first plasma region; and a second plasma generating section that is provided on the moving path of the die and that hydrophilizes the surface of the die in the second plasma region.
Description
Technical Field
The present invention relates to an apparatus for treating a surface of a Die (Die) and a system having the same. And more particularly to an apparatus for processing a surface of a Die for Die Bonding (Die Bonding) and a system having the same.
Background
The semiconductor element manufacturing process may be continuously performed in the semiconductor element manufacturing apparatus, and may be divided into a pre-process and a post-process. The semiconductor manufacturing apparatus may be disposed in a space defined as a FAB (Fabrication Plant, manufacturing factory) to manufacture semiconductor elements.
The pre-process refers to a process of forming a circuit pattern on a Wafer (Wafer) to complete a Chip (Chip). The pre-Process may include a deposition Process (Deposition Process) for forming a thin film on a wafer, an exposure Process (Photo Lithography Process) for transferring a photoresist (Photo resin) onto the thin film using a photomask (Photo Mask), an Etching Process (Etching Process) for selectively removing unwanted portions using a chemical or a reactive gas to form a desired circuit pattern on the wafer, an Ashing Process (Etching Process) for removing photoresist remaining after Etching, an ion implantation Process (Ion Implantation Process) for implanting ions into portions connected to the circuit pattern to have characteristics of electronic components, a Cleaning Process (Cleaning Process) for removing a contamination source on the wafer, and the like.
Post-processing refers to a process that evaluates the performance of a product that is completed by a pre-process. The post Process may include a one-time inspection Process of inspecting whether each Die on the wafer works to screen good and bad products, a Package Process of cutting and separating each Die to have the shape of a product by Dicing (Dicing), die Bonding (Die Bonding), wire Bonding (Molding), marking (Marking), etc., a final inspection Process of finally inspecting the characteristics and reliability of the product by electric characteristics inspection, burn In inspection, etc.
Disclosure of Invention
In the prior art, in the case of Direct Bonding (Direct Bonding), vacuum plasma is generally used for surface activation. In this case, however, the Time required for each process (Tack Time) may increase, and higher process costs and space may be required because of the need for a vacuum chamber, a pump, and the like.
In addition, due to O for surface activation in vacuum plasma 2 The gases, the metal layer exposed at the Die (Die) surface may be oxidized.
The technical problem to be solved by the present invention is to provide a die surface treating apparatus and a die bonding system having the same, which sequentially perform a reduction treatment and an activation treatment for a die in a Dual Zone (Dual Zone).
The technical problems of the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned can be clearly understood by those skilled in the art from the following description.
An aspect of the die surface treating apparatus of the present invention for solving the above technical problems includes: a stage for supporting the die; a first plasma generating section that is provided on a moving path of the die and that performs a reduction treatment on a surface of the die in a first plasma region; and a second plasma generating section that is provided on a moving path of the die and that hydrophilizes a surface of the die in a second plasma region.
The first plasma generating part may perform a reduction process on the surface of the die using a first process gas, and the first process gas may include an inert gas and a reducing gas.
The first process gas may include more of the inert gas than the reducing gas.
The reducing gas may include H 2 And NH 3 At least one of them.
The second plasma generating part may hydrophilize the surface of the die using a second process gas, and the second process gas may include an inert gas.
The stage may rotate in at least one direction and the die may sequentially pass through the first plasma region and the second plasma region as the stage rotates.
The die may rotate on the stage in at least one direction and the die may sequentially pass through the first plasma region and the second plasma region as it rotates on the stage.
The die may first pass through the first plasma region and then through the second plasma region.
The first plasma region and the second plasma region may be formed in one shared region, and the first plasma region and the second plasma region may be divided by a barrier.
The barrier may be made of at least one of metal and ceramic.
The first plasma generating section and the second plasma generating section may simultaneously generate plasmas of different types from each other in the first plasma region and the second plasma region using an integrated electrode.
The first plasma generating part may include: a first body disposed at an upper portion of the first plasma region; a second body disposed at a lower portion of the first plasma region; a first gas supply module for supplying a first process gas to the first plasma region using a first transfer passage formed inside the first body; and a first electrode disposed inside the first body and exciting the first process gas when a power is applied thereto.
The second plasma generating part may include: a third body disposed at an upper portion of the second plasma region; a fourth body disposed at a lower portion of the second plasma region; a second gas supply module for supplying a second process gas to the second plasma region using a second transfer passage formed inside the third body; and a second electrode disposed inside the third body and exciting the second process gas when a power is applied thereto.
The first plasma generating section and the second plasma generating section may be disposed adjacently in the width direction or disposed at a distance in the length direction on the stage.
The first plasma generating part and the second plasma generating part may repeatedly process the surface of the die, and may alternately process the surface of the die.
The die may include: a substrate layer; a metal layer formed on the substrate layer; an insulating layer formed on the same surface of the substrate layer as the metal layer; a through hole penetrating the substrate layer and filled with metal; and a barrier layer formed between the substrate layer and the through hole inside the substrate layer.
The first plasma generating section and the second plasma generating section may treat the surface of the die with atmospheric pressure plasma.
The die surface treatment apparatus may be applied to a direct bonding process.
Another aspect of the die surface treating apparatus of the present invention for solving the above technical problems includes: a stage supporting the die and rotating in at least one direction; a first plasma generating section that is provided on a moving path of the die and that performs a reduction treatment on a surface of the die in a first plasma region; and a second plasma generating section that is provided on a moving path of the die and that performs hydrophilization treatment on a surface of the die in a second plasma region, wherein the first plasma generating section and the second plasma generating section are provided adjacently in a width direction on the stage, and the die alternately performs surface treatment in the first plasma region and the second plasma region as the stage rotates.
An aspect of the die bonding system of the present invention for solving the above technical problems includes: a die surface treatment device for performing reduction treatment and hydrophilization treatment on the surface of the die; a wetting device forming a liquid film on the substrate in a region where the die is to be bonded; a bonding head for temporarily bonding the die to the substrate by bringing a bonding surface of the die into contact with the liquid film on the substrate; and a heat treatment chamber for heat treating the substrate prior to main bonding of the die, wherein the die surface treatment apparatus comprises: a stage supporting the die; a first plasma generating section that is provided on a moving path of the die and that performs a reduction treatment on a surface of the die in a first plasma region; and a second plasma generating section that is provided on a moving path of the die and that hydrophilizes a surface of the die in a second plasma region.
Specific details of other embodiments are included in the detailed description and the accompanying drawings.
Drawings
Fig. 1 is a plan view schematically showing the structure of a die surface treating apparatus according to an embodiment of the present invention.
Fig. 2 is a side view schematically showing the structure of a die surface-treated by a die surface treating apparatus according to an embodiment of the present invention.
Fig. 3 is a plan view schematically showing the structure of a die surface treating apparatus according to another embodiment of the present invention.
Fig. 4 is a side sectional view schematically showing the structure of a first plasma generating section constituting a die surface treating apparatus according to an embodiment of the present invention.
Fig. 5 is a view showing a first embodiment of a first plasma generating section and a second plasma generating section constituting a die surface treating apparatus according to an embodiment of the present invention.
Fig. 6 is a diagram showing a second embodiment of a first plasma generating section and a second plasma generating section constituting a die surface treating apparatus according to an embodiment of the present invention.
Fig. 7 is a plan view schematically showing the structure of a die surface treating apparatus according to still another embodiment of the present invention.
Fig. 8 is a view showing a third embodiment of a first plasma generating section and a second plasma generating section constituting a die surface treating apparatus according to an embodiment of the present invention.
Fig. 9 is a view showing a fourth embodiment of a first plasma generating section and a second plasma generating section constituting a die surface treating apparatus according to an embodiment of the present invention.
Fig. 10 is a diagram showing a fifth embodiment of a first plasma generating section and a second plasma generating section constituting a die surface treating apparatus according to an embodiment of the present invention.
Fig. 11 is a diagram schematically showing an internal constitution of a die bonding system including a die surface treating apparatus according to an embodiment of the present invention.
Fig. 12 is a flowchart sequentially showing a die bonding method of a die bonding system including a die surface treatment apparatus according to an embodiment of the present invention.
Description of the reference numerals
100: surface treatment device for die
110. 110a, 110b, … …, 110n: die sheet
120: station 130: first plasma generating part
140: the second plasma generating section 210: substrate layer
220: metal layer 230: insulating layer
240: through hole 250: barrier layer
310: the first body 320: a second main body
330: the first gas supply module 340: first power supply applying module
350: first electrode 360: first plasma region
370: first delivery channel 380: first process gas
410: shared area 420: barrier element
510: third body 520: fourth main body
540: the second power application module 550: second electrode
560: second plasma region 580: second process gas
600: die-bonding system 610: wetting device
620: the joint 630: heat treatment chamber
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention and the method of achieving them will become apparent by referring to the embodiments described in detail below in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms different from each other, which are provided only for complete disclosure of the present invention and to fully inform a person of ordinary skill in the art of the scope of the present invention, which is limited only by the scope of the claims. Throughout the specification, like reference numerals refer to like constituent elements.
An element (or layer) is referred to as being "on" or "over" another element or layer, and includes not only the element directly on the other element or layer, but also intervening elements or layers. In contrast, an element being referred to as being "directly on" or directly above "another element indicates that there are no other elements or layers intervening.
In order to easily describe the correlation of one element or component with another element or component as shown in the drawings, spatially relative terms "lower", "upper", and the like may be used. It will be understood that spatially relative terms are intended to encompass different orientations of the elements in use or operation in addition to the orientation depicted in the figures. For example, when an element shown in the drawings is turned over, elements described as "below" or "beneath" another element could be located "above" the other element. Thus, the exemplary term "below" may include both below and above directions. Elements may also be oriented in another direction and therefore spatially relative terms may be construed in accordance with the orientation.
Although the terms "first," "second," etc. may be used to describe various elements, components, and/or portions, these elements, components, and/or portions are obviously not limited by these terms. These terms are only used to distinguish one element, component, and/or section from another element, component, and/or section. Therefore, the first element, the first component, or the first part mentioned below may be the second element, the second component, or the second part, as is apparent within the technical idea of the present invention.
The terminology used in the description is for the purpose of describing embodiments only and is not intended to be limiting of the invention. In this specification, the singular forms also include the plural unless specifically mentioned in the sentence. The use of "comprising" and/or "including" in the specification does not exclude the presence or addition of more than one other elements, steps, operations and/or components than those mentioned.
All terms (including technical and scientific terms) used in this specification, if not other, can be used in the meaning commonly understood by one of ordinary skill in the art to which this invention belongs. Furthermore, terms defined in commonly used dictionaries are not intended to be interpreted as being ideal or excessively unless specifically defined.
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings, and the same or corresponding constituent elements are given the same reference numerals regardless of the reference numerals, and the repeated description thereof will be omitted.
The present invention relates to an apparatus for processing a surface of a Die (Die) for Direct Bonding. The die surface treatment apparatus according to the present invention is characterized in that the reduction treatment and the activation treatment of the die are sequentially performed in a Dual Zone (Dual Zone).
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings and the like.
Fig. 1 is a plan view schematically showing the structure of a die surface treating apparatus according to an embodiment of the present invention.
Referring to fig. 1, a die surface treatment apparatus 100 may include a die 110, a Stage 120, a first plasma generating section 130, and a second plasma generating section 140.
Die 110 is used for Die Bonding (Die Bonding). Such die 110 may be processed by a direct bonding process, such as a direct hybrid bonding process.
The die 110 may be surface treated prior to treatment by the direct bonding process. In this embodiment, the die surface treatment apparatus 100 performs surface treatment on the die 110, for example, the die 110 may be surface-treated with plasma.
In the case where the die 110 is implemented as a direct hybrid bond specimen, for example, the die 110 may have a structure as shown in fig. 2.
Fig. 2 is a side view schematically showing the structure of a die surface-treated by a die surface treating apparatus according to an embodiment of the present invention. Next, description will be given with reference to fig. 2.
The die 110 may include a Substrate Layer (Substrate Layer) 210, a Metal Layer (metallic Layer) 220, and an insulating Layer (Dielectric Layer) 230. Here, the substrate layer 210 may be manufactured with a silicon (Si) substance as a main component, but in the present embodiment, the manufacturing of the substrate layer 210 is not necessarily limited thereto.
A metal layer 220 and an insulating layer 230 are formed on the substrate layer 210. At this time, the metal layer 220 may be formed on one surface of the substrate layer 210, and the insulating layer 230 may be formed on both surfaces of the substrate layer 210. However, the present embodiment is not limited thereto. The metal layer 220 may also be formed on both surfaces of the substrate layer 210 like the insulating layer 230.
In the case where the metal layer 220 is formed on one surface of the substrate layer 210, the metal layer 220 may be defined to be formed in a partial region. In this case, the insulating layer 230 may be formed in the remaining region. For example, the metal layer 220 may be a redistribution layer (RDL; re-Distribution Layer).
Die 110 may include vias (Via) 240 through substrate layer 210 to form a circuit. Such vias 240 may be provided in a plurality within die 110.
The through holes 240 may be filled with a metal material. For example, the via 240 may be filled with a copper (Cu) material.
On the other hand, the die 110 may include a barrier layer 250 between the substrate layer 210 and the via 240 to prevent the metal filled in the via 240 from penetrating into the substrate layer 210.
Die 110 may be fabricated by stacking multiple chips (chips) using micro bump bonding (Micro Bump Bonding). In this case, the plurality of dies 110a, 110b, & 110n can be through silicon via (TSV; through Sillicon Via) dies. However, the present embodiment is not limited thereto. Die 110 may also be fabricated by stacking multiple chips using Wire Bonding (Wire Bonding).
The description is made again with reference to fig. 1.
Stage 120 supports die 110 positioned on top. Such a stage 120 may support a plurality of dies 110a, 110b, …, 110n. However, the present embodiment is not limited thereto. Stage 120 may also support a single die 110.
The stage 120 may be configured to be rotatable. In this case, the stage 120 may be rotatable in the clockwise direction or may be rotatable in the counterclockwise direction. When the Stage 120 is configured as a turntable (Rotation Stage), the plurality of dies 110a, 110b, …, 110n can sequentially pass through the first plasma generating section 130 and the second plasma generating section 140 on the Stage 120. In this case, a plurality of dies 110a, 110b, …, 110n can be provided to be fixed on the stage 120.
Alternatively, as shown in fig. 3, the stage 120 may be stationary and a plurality of dies 110a, 110b, …, 110n may be provided rotatable on the stage 120. In this case, the plurality of dies 110a, 110b, 110n may also sequentially pass through the first plasma generating section 130 and the second plasma generating section 140 on the stage 120. Fig. 3 is a plan view schematically showing the structure of a die surface treating apparatus according to another embodiment of the present invention.
On the other hand, the plurality of dies 110a, 110b, …, 110n can be rotatably disposed on the stage 120 in any one of a clockwise direction and a counterclockwise direction. However, the present embodiment is not limited thereto. A plurality of dies 110a, 110b, & 110n may also be rotatably disposed on the stage 120 in two directions (i.e., both clockwise and counterclockwise).
The description is made again with reference to fig. 1.
The table 120 may be configured to have a circular cross-sectional shape in the lateral direction (first direction 10). However, the present embodiment is not limited thereto. The stage 120 may have an elliptical shape or a polygonal shape in cross section in the first direction 10. For example, as shown in fig. 3, the stage 120 may be configured to have a quadrangular cross-sectional shape in the first direction 10.
Fig. 1 shows that the table 120 is configured to be rotatable in the case of having a circular shape. However, the present embodiment is not limited thereto. The table 120 may be provided stationary as shown in fig. 3 in the case of having a circular shape. The same is true for the stage 120 having other shapes than a circular shape.
The first plasma generating part 130 is disposed on a moving path of the die 110. Such a first Plasma generating part 130 may surface-treat the bonding surface of the die 110 using an atmospheric pressure Plasma (AP Plasma). The first plasma generating part 130 may be implemented as an atmospheric pressure plasma electrode.
The first plasma generating part 130 may perform a reduction process on the surface of the die 110 using atmospheric pressure plasma. For this, as shown in fig. 4, the first plasma generating part 130 may include a first body 310, a second body 320, a first gas supply module 330, a first power applying module 340, and a first electrode 350.
Fig. 4 is a side sectional view schematically showing the structure of a first plasma generating section constituting a die surface treating apparatus according to an embodiment of the present invention. Next, description will be given with reference to fig. 4.
The first body 310 and the second body 320 may be disposed at upper and lower portions, respectively, with the first plasma region 360, in which plasma is generated, interposed therebetween. To generate plasma, the first body 310 may have a first electrode 350 inside thereof, and the second body 320 may be Grounded (GND). The first body 310 and the second body 320 may be formed of an insulator.
The first gas supply module 330 supplies a first process gas 380 to the first plasma region 360. In the above, the first plasma region 360 means a plasma generation section for reduction.
As described above, the first plasma generating part 130 may perform the reduction process on the surface of the die 110. For this, the first gas supply module 330 may mix an inert gas and a reducing gas and then supply the mixed gas as the first process gas 380.
As described above, the first process gas 380 is a gas consisting of an inert gasThe body and the reducing gas are mixed. Here, ar or the like can be used as an inert gas, and H 2 、NH 3 Etc. may be used as the reducing gas.
The first process gas 380 may be a gas in which inert gases are mixed in a higher ratio than the reducing gases. For example, the reducing gas may be present in the first process gas 380 in a proportion of less than 0.3%.
On the other hand, the first process gas 380 may move toward the first plasma region 360 through the first transfer passage 370 formed in the first body 310.
The first power supply module 340 applies RF power to the first electrode 350. Such a first power application module 340 may apply RF power to the first electrode 350 while supplying the first process gas 380 to the first plasma region 360 through the first transfer passage 370.
The first electrode 350 excites the first process gas 380 moving toward the first plasma region 360 based on the RF power applied by the first power application module 340. First process gas 380 may be excited by first electrode 350 and plasma treat the surface of die 110 in first plasma region 360.
The description is made again with reference to fig. 1.
The second plasma generating part 140 may be disposed on the moving path of the die 110 like the first plasma generating part 130. Such a second plasma generating section 140 may also perform surface treatment of the bonding surface of the die 110 by using atmospheric pressure plasma. The second plasma generating section 140 may be implemented as an atmospheric pressure plasma electrode like the first plasma generating section 130.
As shown in fig. 5, the first plasma generating part 130 and the second plasma generating part 140 may be integrated to be implemented as one module.
Fig. 5 is a view showing a first embodiment of a first plasma generating section and a second plasma generating section constituting a die surface treating apparatus according to an embodiment of the present invention. Hereinafter, description will be given with reference to fig. 5.
The first plasma generating part 130 and the second plasma generating part 140 may share the region 410 formed within one module. At this time, a barrier (barrier) 420 may be disposed within this shared region 410, thereby dividing the shared region 410 into a first plasma region 360 and a second plasma region 560. In the above, the first plasma region 360 means a plasma generation section for reduction, and the second plasma region 560 means a plasma generation section for hydrophilicity.
The barrier 420 divides the shared area 410 into dual zones 360, 560. The barrier 420 may be made of Metal (Metal) or Ceramic (Ceramic) as a material.
On the other hand, as shown in fig. 6, the first plasma generating section 130 and the second plasma generating section 140 may be separated to be implemented as separate modules. Fig. 6 is a diagram showing a second embodiment of a first plasma generating section and a second plasma generating section constituting a die surface treating apparatus according to an embodiment of the present invention.
In the case where the first plasma generating section 130 and the second plasma generating section 140 are integrated as shown in fig. 5 to be implemented as one module, the first plasma generating section 130 and the second plasma generating section 140 may be adjacently disposed in the width direction (first direction 10) on the stage 120. For example, the first plasma generating section 130 and the second plasma generating section 140 may be provided on the stage 120 in the structure shown in fig. 1 and 3.
However, the present embodiment is not limited thereto. In the case where the first plasma generating part 130 and the second plasma generating part 140 are separated as shown in fig. 6 to be implemented as separate modules, the first plasma generating part 130 and the second plasma generating part 140 may be disposed at intervals in the length direction (second direction 20) on the stage 120. For example, the first plasma generating section 130 and the second plasma generating section 140 may be provided on the stage 120 in the structure shown in fig. 7. Fig. 7 is a plan view schematically showing the structure of a die surface treating apparatus according to still another embodiment of the present invention.
The description is made again with reference to fig. 1.
The second plasma generating section 140 may perform an activation process (or a hydrophilization process) on the surface of the die 110 using atmospheric pressure plasma. For this reason, the second plasma generating section 140 may be provided in the same structure as the first plasma generating section 130 shown in fig. 4.
Hereinafter, each constituent element constituting the second plasma generating section 140 will be described, and the entire structure thereof may be referred to fig. 4.
The second plasma generating part 140 may include a third body 510, a fourth body 520, a second gas supply module, a second power applying module, and a second electrode. The third body 510, the fourth body 520, and the second plasma region 560 may be illustrated with reference to fig. 5 and 6.
The third body 510 and the fourth body 520 may correspond to the first body 310 and the second body 320, respectively. That is, the third body 510 may be formed in the same structure as the first body 310, and the fourth body 520 may be formed in the same structure as the second body 320.
The second gas supply module supplies a second process gas to the second plasma region 560. Such a second gas supply module may be formed in the same structure as the first gas supply module 330.
As described above, the second plasma generating part 140 may perform an activation process (or a hydrophilization process) on the surface of the die 110. For this, the second gas supply module may supply an inert gas as the second process gas. For example, the second gas supply module may supply Ar or the like as the second process gas.
On the other hand, the second process gas may move toward the second plasma region 560 through the second transfer passage formed in the third body 510. The second conveyance path may be formed in the same structure as the first conveyance path 370.
The second power supply module applies RF power to the second electrode. The second power applying module and the second electrode may be formed in the same structure as the first power applying module 340 and the first electrode 350.
The second electrode excites a second process gas that moves toward the second plasma region 560 based on the RF power applied by the second power application module. The second process gas may be excited by the second electrode and plasma treat the surface of die 110 in a second plasma region 560.
As shown in fig. 8, the first plasma generating section 130 and the second plasma generating section 140 may excite the process gases 380, 580 using the respective power modules 340, 540 and the electrodes 350, 550. In particular, the first plasma generating part 130 may excite the first process gas 380 moving to the first plasma region 360 using the first power applying module 340 and the first electrode 350, and the second plasma generating part 140 may excite the second process gas 580 moving to the second plasma region 560 using the second power applying module 540 and the second electrode 550. Fig. 8 is a view showing a third embodiment of a first plasma generating section and a second plasma generating section constituting a die surface treating apparatus according to an embodiment of the present invention.
In the case where the first plasma generating section 130 and the second plasma generating section 140 use the respective power supply modules 340, 540 and the electrodes 350, 550 as shown in fig. 8, the first plasma generating section 130 and the second plasma generating section 140 may excite the process gases 380, 580 under different voltage conditions from each other.
However, the present embodiment is not limited thereto. As shown in fig. 9, the first and second plasma generating sections 130, 140 may also excite the process gases 380, 580 by applying power to the first and second electrodes 350, 550 using a single power application module 340. In this case, the first plasma generating part 130 and the second plasma generating part 140 may excite the process gases 380, 580 under the same voltage condition. Fig. 9 is a view showing a fourth embodiment of a first plasma generating section and a second plasma generating section constituting a die surface treating apparatus according to an embodiment of the present invention.
On the other hand, as shown in fig. 10, the electrodes of the first and second plasma generating parts 130 and 140 may be formed as a single body. When the electrode is formed as a single body 350 like this, a reducing gas may be injected at one end and an activating gas may be injected at the other end, thereby simultaneously forming two types of AP plasma. Fig. 10 is a diagram showing a fifth embodiment of a first plasma generating section and a second plasma generating section constituting a die surface treating apparatus according to an embodiment of the present invention.
The first plasma generating unit 130 and the second plasma generating unit 140 are described above with reference to fig. 1 and 4 to 10. The first plasma generating part 130 and the second plasma generating part 140 may excite the process gas into a plasma state to surface-treat the bonding surface of the die 110.
The first plasma generating part 130 performs a reduction process on the surface of the die 110 and the second plasma generating part 140 performs an activation process (or a hydrophilization process) on the surface of the die 110, so in this embodiment, the first plasma generating part 130 may first perform a reduction process on the surface of the die 110, and then the second plasma generating part 140 may perform an activation process (or a hydrophilization process) on the surface of the die 110.
When the second plasma generating part 140 first performs an activation process (or a hydrophilization process) on the surface of the die 110, the metal layer 220 exposed on the surface of the die 110 may be oxidized. Therefore, in this embodiment, in order to prevent such a problem from occurring, the surface of the die 110 may be first subjected to a reduction treatment, and then the surface of the die 110 may be subjected to an activation treatment (or a hydrophilization treatment).
The die 110 may be subjected to one surface treatment by the first plasma generating part 130 and the second plasma generating part 140, respectively. However, the present embodiment is not limited thereto. The die 110 may also be subjected to a plurality of surface treatments by the first plasma generating section 130 and the second plasma generating section 140, respectively.
The die 110 may be subjected to the same number of surface treatments by the first plasma generating part 130 and the second plasma generating part 140. For example, the die 110 may be surface-treated twice by the first plasma generating part 130 and may also be surface-treated twice by the second plasma generating part 140.
However, the present embodiment is not limited thereto. The die 110 may be subjected to surface treatments different from each other by the first plasma generating part 130 and the second plasma generating part 140. For example, the die 110 may be subjected to three surface treatments by the first plasma generating part 130 and four surface treatments by the second plasma generating part 140.
In the above, the die surface treatment apparatus 100 according to various embodiments of the present invention is described with reference to fig. 1 to 10. The die surface treatment apparatus 100 utilizes a dual zone Atmospheric Pressure (AP) plasma electrode to treat the surface of the die 110. In the above, the atmospheric pressure plasma electrode is characterized in that the simultaneous treatment for reduction and hydrophilization (activation) of the sample surface can be performed in the Direct Hybrid bonding process.
In this embodiment, the die surface treatment apparatus 100 may include an AP plasma electrode configured by a dual region to simultaneously discharge a reduction treatment plasma and a hydrophilization (activation) treatment plasma. The die surface treatment apparatus 100 can sequentially perform a reduction process and an activation (hydrophilization) process of the sample surface in a single electrode by using the dual-zone AP plasma electrode, whereby a reduction process and an activation (hydrophilization) process of the metal surface in the substrate for direct hybrid bonding can be sequentially performed. The die surface treatment apparatus 100 may sequentially and repeatedly perform reduction and activation of the sample using a Rotation Stage. In addition, the die surface treatment apparatus 100 can perform the AP plasma process at a lower cost than the vacuum plasma, and can also minimize the layout of the module constitution.
Next, a die bonding method of the die bonding system 600 will be described.
Fig. 11 is a diagram schematically showing an internal constitution of a die bonding system including a die surface treatment apparatus according to an embodiment of the present invention, and fig. 12 is a flowchart sequentially showing a die bonding method of the die bonding system including the die surface treatment apparatus according to an embodiment of the present invention. The following description is made with reference to fig. 11 and 12.
First, a first plasma generating section of the die surface treatment apparatus 100130 performs a reduction process on the surface of the die 110 (S710). The die surface treating apparatus 100 may perform a reduction treatment (e.g., ar/H) on the surface of the die 110 using the first process gas 380 after mixing the inert gas and the reducing gas 2 AP plasma treatment), at which time the metal layer 220 formed on the surface of the die 110 (i.e., the metal surface) may be subjected to a reduction treatment.
Then, the second plasma generating section 140 of the die surface treatment apparatus 100 performs an activation process (or a hydrophilization process) on the surface of the die 110 (S720). The die surface treating apparatus 100 may perform an activation process (or a hydrophilization process) (e.g., an Ar AP plasma process) on the surface of the die 110 using the second process gas 580 composed of an inert gas, and at this time, the insulating layer 230 (i.e., a dielectric surface) formed on the surface of the die 110 may be activated (or hydrophilized).
Then, the wetting device 610 of the die bonding system 600 supplies liquid to the bonding region of the die 110 to be bonded on the substrate to form a liquid film (DIW rinse/spin dry) (S730). At this time, the liquid supplied from the wetting device 610 to the bonding area on the substrate for the formation of the liquid film may be, for example, pure Water (DIW; de-Ionized Water).
The bonding head 620 of the die bonding system 600 then brings the bonding surface of the die 110 into contact with the liquid film on the substrate. At this time, even if the die 110 is not pressurized or warmed, the die 110 may be temporarily bonded to the substrate by a bonding force between the hydrophilized bonding surface of the die 110 and the liquid film (S740).
Then, when the plurality of dies 110 are temporarily bonded to the substrate, the substrate to which the plurality of dies 110 are temporarily bonded is transferred to the heat treatment chamber 630 to perform a heat treatment (Annealing) on the substrate, and the plurality of dies 110 are simultaneously subjected to a main Bonding (Post Bonding) in units of the substrate (S750).
While the embodiments of the present invention have been described above with reference to the drawings, it will be understood by those skilled in the art that the present invention may be embodied in other specific forms without changing the technical spirit or essential characteristics thereof. Accordingly, it should be understood that the above-described embodiments are illustrative in all respects, rather than restrictive.
Claims (20)
1. A die surface treatment apparatus comprising:
a stage for supporting the die;
a first plasma generating section that is provided on a moving path of the die and that performs a reduction treatment on a surface of the die in a first plasma region; and
and a second plasma generating section which is provided on a moving path of the die and which hydrophilizes a surface of the die in a second plasma region.
2. The die surface treatment apparatus of claim 1, wherein,
the first plasma generating part reduces the surface of the die by using a first process gas, and
the first process gas includes an inert gas and a reducing gas.
3. The die surface treating apparatus according to claim 2, wherein,
the first process gas includes more of the inert gas than the reducing gas.
4. The die surface treating apparatus according to claim 2, wherein,
the reducing gas comprises H 2 And NH 3 At least one of them.
5. The die surface treatment apparatus of claim 1, wherein,
the second plasma generating part hydrophilizes the surface of the die by using a second process gas, and
the second process gas comprises an inert gas.
6. The die surface treatment apparatus of claim 1, wherein,
the table rotates in at least one direction, and
the die passes through the first plasma region and the second plasma region sequentially as the stage rotates.
7. The die surface treatment apparatus of claim 1, wherein,
the die rotates on the stage in at least one direction, and
the die sequentially passes through the first plasma region and the second plasma region as it rotates on the stage.
8. The die surface treatment apparatus of claim 1, wherein,
the die first passes through the first plasma region and then through the second plasma region.
9. The die surface treatment apparatus of claim 1, wherein,
the first plasma region and the second plasma region are formed in a shared region, and
the first plasma region and the second plasma region are divided by a barrier.
10. The die surface treating apparatus according to claim 9, wherein,
the barrier is made of at least one of metal and ceramic.
11. The die surface treatment apparatus of claim 1, wherein,
the first plasma generating section and the second plasma generating section simultaneously generate plasmas of different types from each other in the first plasma region and the second plasma region using an integrated electrode.
12. The die surface treatment apparatus of claim 1, wherein the first plasma generating portion comprises:
a first body disposed at an upper portion of the first plasma region;
a second body disposed at a lower portion of the first plasma region;
a first gas supply module for supplying a first process gas to the first plasma region using a first transfer passage formed inside the first body; and
a first electrode disposed inside the first body and exciting the first process gas when a power is applied thereto.
13. The die surface treatment apparatus according to claim 1, wherein the second plasma generating section comprises:
a third body disposed at an upper portion of the second plasma region;
a fourth body disposed at a lower portion of the second plasma region;
a second gas supply module for supplying a second process gas to the second plasma region using a second transfer passage formed inside the third body; and
and a second electrode disposed inside the third body and exciting the second process gas when a power is applied thereto.
14. The die surface treatment apparatus of claim 1, wherein,
the first plasma generating section and the second plasma generating section are disposed adjacently in the width direction or are disposed at intervals in the length direction on the stage.
15. The die surface treatment apparatus of claim 1, wherein,
the first plasma generating part and the second plasma generating part repeatedly process the surface of the die, and alternately process the surface of the die.
16. The die surface treatment apparatus of claim 1, wherein the die comprises:
a substrate layer;
a metal layer formed on the substrate layer;
an insulating layer formed on the same surface of the substrate layer as the metal layer;
a through hole penetrating the substrate layer and filled with metal; and
and a barrier layer formed between the substrate layer and the through hole inside the substrate layer.
17. The die surface treatment apparatus of claim 1, wherein,
the first plasma generating section and the second plasma generating section treat a surface of the die with atmospheric pressure plasma.
18. The die surface treatment apparatus of claim 1, wherein,
the die surface treatment device is applied to a direct bonding process.
19. A die surface treatment apparatus comprising:
a stage supporting the die and rotating in at least one direction;
a first plasma generating section that is provided on a moving path of the die and that performs a reduction treatment on a surface of the die in a first plasma region; and
a second plasma generating section which is provided on a moving path of the die and which performs hydrophilization treatment on a surface of the die in a second plasma region,
wherein the first plasma generating section and the second plasma generating section are disposed adjacently in the width direction on the stage, and
the die alternately surface-treats in the first plasma region and the second plasma region as the stage rotates.
20. A die bonding system comprising:
a die surface treatment device for performing reduction treatment and hydrophilization treatment on the surface of the die;
a wetting device forming a liquid film on the substrate in a region where the die is to be bonded;
a bonding head for temporarily bonding the die to the substrate by bringing a bonding surface of the die into contact with the liquid film on the substrate; and
a heat treatment chamber for heat treating the substrate prior to primary bonding of the die,
wherein the die surface treatment apparatus comprises:
a stage supporting the die;
a first plasma generating section that is provided on a moving path of the die and that performs a reduction treatment on a surface of the die in a first plasma region; and
and a second plasma generating section which is provided on a moving path of the die and which hydrophilizes a surface of the die in a second plasma region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210438866.5A CN116978766A (en) | 2022-04-21 | 2022-04-21 | Die surface treatment device and die bonding system having the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210438866.5A CN116978766A (en) | 2022-04-21 | 2022-04-21 | Die surface treatment device and die bonding system having the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116978766A true CN116978766A (en) | 2023-10-31 |
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ID=88475427
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210438866.5A Pending CN116978766A (en) | 2022-04-21 | 2022-04-21 | Die surface treatment device and die bonding system having the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116978766A (en) |
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2022
- 2022-04-21 CN CN202210438866.5A patent/CN116978766A/en active Pending
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