CN116960067A - Direct-insert rectifying high-power diode - Google Patents
Direct-insert rectifying high-power diode Download PDFInfo
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- CN116960067A CN116960067A CN202311045004.7A CN202311045004A CN116960067A CN 116960067 A CN116960067 A CN 116960067A CN 202311045004 A CN202311045004 A CN 202311045004A CN 116960067 A CN116960067 A CN 116960067A
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- type semiconductor
- protective shell
- protecting crust
- power diode
- shell
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- 230000001681 protective effect Effects 0.000 claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Rectifiers (AREA)
Abstract
The invention discloses a direct-insert rectifying high-power diode which comprises a P-type semiconductor and a pole pin, wherein one side of the P-type semiconductor is fixedly connected with an N-type semiconductor, the outsides of the P-type semiconductor and the N-type semiconductor are sleeved with a fixing sleeve, two sides of the fixing sleeve are provided with first fixing blocks, one side of each first fixing block is fixedly connected with the pole pin, the outside of the P-type semiconductor is provided with a first protective shell, and one side of each first protective shell is provided with a second protective shell. This high-power diode of rectification cut straightly is through being provided with first protecting crust, connecting seat, second protecting crust, when dismantling when needs, revolves and twists first protecting crust, can break away from this moment with the outside connecting seat of second protecting crust, breaks away from first protecting crust and second protecting crust from the outside of utmost point pin respectively again for it is more swift, convenient when dismantling, not swift, convenient when having solved the equipment dismantlement, leads to the inconvenient quick replacement's of inner assembly problem.
Description
Technical Field
The invention relates to the technical field of diodes, in particular to a direct-insert rectifying high-power diode.
Background
The direct-inserting rectifying high-power diode is a semiconductor device for converting alternating-current electric energy into direct-current electric energy, and generally comprises a PN junction in the structure of the diode, and is provided with a positive electrode and a negative electrode, wherein the most important characteristic of the diode is unidirectional conductivity, and in a circuit, current can only flow in from the positive electrode and flow out from the negative electrode of the diode.
According to the application number CN202221026555.X, a diode is disclosed, a diode comprises body, chip and two pins, and two pins are welded in the chip both sides, and the outside is the body of encapsulation, with chip and the partial pin encapsulation that links to each other with the chip in the body, its characterized in that: the pin encapsulated in the body is provided with a plurality of circumferential grooves.
According to the scheme, the circumferential grooves are designed on the pins, and the diameter of the grooves is reduced, so that when the pins are subjected to forces perpendicular to the axial direction, a part of stress is transmitted to the body instead of being transmitted to the chip entirely, and the body is packaged integrally, so that the stress redundancy is quite large, and the stress absorption is more than sufficient. Therefore, the invention can reduce the axial stress of the diode, but is not fast and convenient in assembly and disassembly, so that the internal components are inconvenient to be quickly replaced, and therefore, the invention is not applicable
At present, a novel direct-insert rectifying high-power diode is provided for solving the scheme.
Disclosure of Invention
The invention aims to provide an in-line rectifying high-power diode so as to solve the problem that the assembly and disassembly are not fast and convenient in the background art, so that the internal components are inconvenient to replace quickly.
In order to achieve the above purpose, the present invention provides the following technical solutions: the utility model provides a high-power diode of direct-insert rectification, includes P type semiconductor and utmost point pin, one side fixedly connected with N type semiconductor of P type semiconductor, the outside of P type semiconductor and N type semiconductor has cup jointed fixed cover, the both sides of fixed cover are provided with first fixed block, one side fixedly connected with utmost point pin of first fixed block, the outside of P type semiconductor is provided with first protecting crust, one side of first protecting crust is provided with the second protecting crust, one side fixedly connected with second fixed block of first protecting crust and second protecting crust, one side fixedly connected with connecting seat of second protecting crust.
Preferably, the outside of connecting seat is provided with the external screw thread, the inner wall of first protecting crust one side is provided with the internal screw thread.
Preferably, one side of the first fixing block is embedded in the two sides of the fixing sleeve and is detachable.
Preferably, the pole pin transversely penetrates the inside of the second fixed block.
Preferably, the diameters of the first protective shell and the second protective shell are the same.
Preferably, the first and second protective shells are greater than the length and width of the retaining sleeve.
Preferably, a protecting sleeve is arranged on one side of the first protecting shell and one side of the second protecting shell, and the protecting sleeve is sleeved on the outer part of the second fixing block and can be detached.
Preferably, the second protecting shell is detachable from the first protecting shell through the connecting seat.
Compared with the prior art, the invention has the beneficial effects that: the direct-insert rectifying high-power diode not only realizes the convenience of quickly disassembling, checking, maintaining and replacing internal components and improves the tightness, but also realizes double-layer protection and quick assembly;
(1) Through being provided with first protection shell, the connecting seat, the second protection shell, utilize the outside of P type semiconductor to be provided with first protection shell, one side of first protection shell is provided with the second protection shell, one side fixedly connected with second fixed block of first protection shell and second protection shell, one side fixedly connected with connecting seat of second protection shell, the outside of connecting seat is provided with the external screw thread, the inner wall of first protection shell one side is provided with the internal screw thread, the diameter of first protection shell is the same with the diameter of second protection shell, first protection shell and second protection shell are greater than the length and the width of fixed cover, the second protection shell is through the detachable relation between connecting seat and the first protection shell, when dismantling in needs, revolve and twist first protection shell, can break away from with the connecting seat outside the second protection shell at this moment, break away from first protection shell and second protection shell from the outside of utmost point pin respectively again, make more swiftly, convenience when dismantling;
(2) Through being provided with P type semiconductor, fixed cover, N type semiconductor, first fixed block, utilize the outside of connecting seat to be provided with the external screw thread, the inner wall of one side of first protecting crust is provided with the internal screw thread, and the inside detachable relation of one side of first fixed block inlays in the fixed cover both sides, during the equipment, can cup joint the fixed cover in the outside of P type semiconductor and N type semiconductor, it can to inlay the inside fixed of fixed cover with one side of first fixed block again for whole more sealed;
(3) Through being provided with second fixed block, lag, utilize the inside that utmost point pin transversely runs through the second fixed block, one side of first lag and second lag is provided with the lag, and the lag cup joints the outside detachable relation at the second fixed block, when not using, can cup joint the lag in the outside of utmost point pin, the joint is in the outside of second fixed block to can be convenient for protect the outside of utmost point pin.
Drawings
FIG. 1 is a schematic cross-sectional elevation view of the present invention;
FIG. 2 is a schematic side view of a connection structure of the connection base and the second protection shell according to the present invention;
FIG. 3 is a schematic side view of a connection mode of a fixing sleeve and a first fixing block according to the present invention;
FIG. 4 is a schematic diagram of the front view of the connection between the protecting sleeve and the fixing block;
FIG. 5 is a schematic diagram showing the front view of the connection between the fixing sleeve and the fixing block;
FIG. 6 is a schematic front view of a connection mode of a first protective shell and a second protective shell according to the present invention.
In the figure: 1. a P-type semiconductor; 2. a fixed sleeve; 3. an N-type semiconductor; 4. a first fixed block; 5. a pole pin; 6. a second fixed block; 7. a protective sleeve; 8. a first protective shell; 9. a connecting seat; 10. and a second protective shell.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1: referring to fig. 1-6, the direct-insert rectifying high-power diode comprises a P-type semiconductor 1 and a pole pin 5, wherein an N-type semiconductor 3 is fixedly connected to one side of the P-type semiconductor 1, a fixing sleeve 2 is sleeved outside the P-type semiconductor 1 and the N-type semiconductor 3, first fixing blocks 4 are arranged on two sides of the fixing sleeve 2, a pole pin 5 is fixedly connected to one side of the first fixing blocks 4, a first protecting shell 8 is arranged outside the P-type semiconductor 1, a second protecting shell 10 is arranged on one side of the first protecting shell 8, a second fixing block 6 is fixedly connected to one side of the first protecting shell 8 and one side of the second protecting shell 10, and a connecting seat 9 is fixedly connected to one side of the second protecting shell 10;
the outer part of the connecting seat 9 is provided with external threads, and the inner wall at one side of the first protective shell 8 is provided with internal threads;
the diameters of the first protective shell 8 and the second protective shell 10 are the same;
the first protective shell 8 and the second protective shell 10 are larger than the length and the width of the fixed sleeve 2;
the second protective shell 10 is detachable from the first protective shell 8 through the connecting seat 9;
specifically, as shown in fig. 1, 2 and 6, the first protecting shell 8 is arranged outside the P-type semiconductor 1, the second protecting shell 10 is arranged on one side of the first protecting shell 8, the second fixing block 6 is fixedly connected to one side of the first protecting shell 8 and one side of the second protecting shell 10, the connecting seat 9 is fixedly connected to one side of the second protecting shell 10, external threads are arranged outside the connecting seat 9, internal threads are arranged on the inner wall of one side of the first protecting shell 8, the diameters of the first protecting shell 8 and the second protecting shell 10 are identical, the first protecting shell 8 and the second protecting shell 10 are larger than the length and the width of the fixing sleeve 2, the second protecting shell 10 is in a detachable relation with the first protecting shell 8 through the connecting seat 9, when the first protecting shell 8 and the second protecting shell 10 are required to be detached, the first protecting shell 8 and the second protecting shell 10 can be detached from the outer part of the pole pin 5 by screwing, and the first protecting shell 8 and the second protecting shell 10 can be detached from the outer part of the pole pin 5 respectively, so that the first protecting shell 8 and the second protecting shell can be detached more quickly and conveniently when the first protecting shell and the second protecting shell is detached.
Example 2: one side of the first fixed block 4 is embedded in the two sides of the fixed sleeve 2 and is detachable;
specifically, as shown in fig. 1, 3 and 5, external threads are provided on the outer portion of the connecting seat 9, internal threads are provided on the inner wall of one side of the first protecting shell 8, one side of the first fixing block 4 is embedded in the detachable relationship inside two sides of the fixing sleeve 2, when the assembly is performed, the fixing sleeve 2 can be sleeved on the outer portions of the P-type semiconductor 1 and the N-type semiconductor 3, and then one side of the first fixing block 4 is embedded in the fixing sleeve 2 to be fixed, so that the whole is more sealed.
Example 3: the pole pin 5 transversely penetrates through the inside of the second fixed block 6;
one side of the first protective shell 8 and one side of the second protective shell 10 are provided with protective sleeves 7, and the protective sleeves 7 are sleeved outside the second fixed block 6 and can be detached;
specifically, as shown in fig. 1 and fig. 4, the pole pin 5 is used to transversely penetrate through the second fixing block 6, a protecting sleeve 7 is arranged on one side of the first protecting shell 8 and one side of the second protecting shell 10, the protecting sleeve 7 is sleeved on the second fixing block 6 in a detachable relationship, and when the pole pin is not used, the protecting sleeve 7 can be sleeved on the pole pin 5 and clamped on the second fixing block 6, so that the pole pin 5 can be conveniently protected.
Working principle: when the invention is used, firstly, external threads are arranged outside the connecting seat 9, internal threads are arranged on the inner wall at one side of the first protective shell 8, one side of the first fixed block 4 is embedded in the detachable relation inside the two sides of the fixed sleeve 2, during assembly, the fixed sleeve 2 can be sleeved outside the P-type semiconductor 1 and the N-type semiconductor 3, one side of the first fixed block 4 is embedded in the fixed sleeve 2 to ensure that the whole is more sealed, afterwards, the pole pin 5 transversely penetrates the inside of the second fixed block 6, the protective sleeve 7 is arranged at one side of the first protective shell 8 and the second protective shell 10, the protective sleeve 7 is sleeved outside the second fixed block 6 in the detachable relation, and when not in use, the protective sleeve 7 can be sleeved outside the pole pin 5 and clamped outside the second fixed block 6, thereby being convenient for protecting the outside of the pole pin 5, finally, the outside of the P-type semiconductor 1 is provided with a first protective shell 8, one side of the first protective shell 8 is provided with a second protective shell 10, one side of the first protective shell 8 and one side of the second protective shell 10 are fixedly connected with a second fixed block 6, one side of the second protective shell 10 is fixedly connected with a connecting seat 9, the outside of the connecting seat 9 is provided with external threads, the inner wall of one side of the first protective shell 8 is provided with internal threads, the diameters of the first protective shell 8 and the second protective shell 10 are the same, the first protective shell 8 and the second protective shell 10 are larger than the length and the width of the fixed sleeve 2, the second protective shell 10 is in detachable relation with the first protective shell 8 through the connecting seat 9, when the first protective shell 8 is required to be detached, the first protective shell 8 can be detached from the connecting seat 9 outside the second protective shell 10 at the moment, the first protective shell 8 and the second protective shell 10 are detached from the outside of the pole pin 5 respectively, so that the disassembly is quicker and more convenient.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (8)
1. The direct-insert rectifying high-power diode comprises a P-type semiconductor (1) and a pole pin (5), and is characterized in that: one side fixedly connected with N type semiconductor (3) of P type semiconductor (1), the outside of P type semiconductor (1) and N type semiconductor (3) has cup jointed fixed cover (2), the both sides of fixed cover (2) are provided with first fixed block (4), one side fixedly connected with utmost point base pin (5) of first fixed block (4), the outside of P type semiconductor (1) is provided with first protecting crust (8), one side of first protecting crust (8) is provided with second protecting crust (10), one side fixedly connected with second fixed block (6) of first protecting crust (8) and second protecting crust (10), one side fixedly connected with connecting seat (9) of second protecting crust (10).
2. The in-line commutating high power diode of claim 1 wherein: the outside of connecting seat (9) is provided with the external screw thread, the inner wall of first protecting crust (8) one side is provided with the internal screw thread.
3. The in-line commutating high power diode of claim 1 wherein: one side of the first fixed block (4) is embedded in the two sides of the fixed sleeve (2) and is detachable.
4. The in-line commutating high power diode of claim 1 wherein: the pole pin (5) transversely penetrates through the second fixing block (6).
5. The in-line commutating high power diode of claim 1 wherein: the diameters of the first protective shell (8) and the second protective shell (10) are the same.
6. The in-line commutating high power diode of claim 1 wherein: the first protective shell (8) and the second protective shell (10) are larger than the length and the width of the fixed sleeve (2).
7. The in-line commutating high power diode of claim 1 wherein: one side of the first protective shell (8) and one side of the second protective shell (10) are provided with protective sleeves (7), and the protective sleeves (7) are sleeved on the outer part of the second fixed block (6) and can be detached.
8. The in-line commutating high power diode of claim 1 wherein: the second protective shell (10) is detachable from the first protective shell (8) through the connecting seat (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311045004.7A CN116960067A (en) | 2023-08-18 | 2023-08-18 | Direct-insert rectifying high-power diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311045004.7A CN116960067A (en) | 2023-08-18 | 2023-08-18 | Direct-insert rectifying high-power diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116960067A true CN116960067A (en) | 2023-10-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311045004.7A Pending CN116960067A (en) | 2023-08-18 | 2023-08-18 | Direct-insert rectifying high-power diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116960067A (en) |
Citations (11)
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| CN107086206A (en) * | 2017-04-26 | 2017-08-22 | 东莞市柏尔电子科技有限公司 | A kind of diode for possessing great heat radiation effect |
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| CN109148602A (en) * | 2017-06-28 | 2019-01-04 | 姜先 | A kind of replaceable diode |
| CN211238225U (en) * | 2020-03-14 | 2020-08-11 | 深圳市阿赛姆科技有限公司 | Bidirectional transient voltage suppression diode |
| CN111725328A (en) * | 2020-08-10 | 2020-09-29 | 江苏明芯微电子股份有限公司 | Switch diode with strong negative resistance on inner mesa |
| CN211629073U (en) * | 2020-05-06 | 2020-10-02 | 常州市朗捷电子有限公司 | Split type diode |
| CN215731675U (en) * | 2021-08-02 | 2022-02-01 | 深圳市麦思浦半导体有限公司 | Semiconductor diode with pin protection architecture |
| CN217334073U (en) * | 2022-04-28 | 2022-08-30 | 浙江人和光伏科技有限公司 | Diode with high breakdown voltage |
| CN217822741U (en) * | 2022-07-07 | 2022-11-15 | 上海卡玖科技有限公司 | Waterproof diode |
| WO2023010645A1 (en) * | 2021-08-02 | 2023-02-09 | 江苏泽润新材料有限公司 | Axial diode junction box and manufacturing method therefor |
| CN116364662A (en) * | 2023-05-29 | 2023-06-30 | 广东神思半导体有限公司 | Voltage-stabilizing waterproof diode |
-
2023
- 2023-08-18 CN CN202311045004.7A patent/CN116960067A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086206A (en) * | 2017-04-26 | 2017-08-22 | 东莞市柏尔电子科技有限公司 | A kind of diode for possessing great heat radiation effect |
| CN109148602A (en) * | 2017-06-28 | 2019-01-04 | 姜先 | A kind of replaceable diode |
| CN207097799U (en) * | 2017-07-12 | 2018-03-13 | 芯创（湖北）半导体科技有限公司 | A kind of diode for being conveniently replaceable PN pieces |
| CN211238225U (en) * | 2020-03-14 | 2020-08-11 | 深圳市阿赛姆科技有限公司 | Bidirectional transient voltage suppression diode |
| CN211629073U (en) * | 2020-05-06 | 2020-10-02 | 常州市朗捷电子有限公司 | Split type diode |
| CN111725328A (en) * | 2020-08-10 | 2020-09-29 | 江苏明芯微电子股份有限公司 | Switch diode with strong negative resistance on inner mesa |
| CN215731675U (en) * | 2021-08-02 | 2022-02-01 | 深圳市麦思浦半导体有限公司 | Semiconductor diode with pin protection architecture |
| WO2023010645A1 (en) * | 2021-08-02 | 2023-02-09 | 江苏泽润新材料有限公司 | Axial diode junction box and manufacturing method therefor |
| CN217334073U (en) * | 2022-04-28 | 2022-08-30 | 浙江人和光伏科技有限公司 | Diode with high breakdown voltage |
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| CN116364662A (en) * | 2023-05-29 | 2023-06-30 | 广东神思半导体有限公司 | Voltage-stabilizing waterproof diode |
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