CN116953464A - All-condition short circuit test method and device for IGBT power module - Google Patents
All-condition short circuit test method and device for IGBT power module Download PDFInfo
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- CN116953464A CN116953464A CN202310949037.8A CN202310949037A CN116953464A CN 116953464 A CN116953464 A CN 116953464A CN 202310949037 A CN202310949037 A CN 202310949037A CN 116953464 A CN116953464 A CN 116953464A
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Abstract
The invention provides an all-condition short circuit test method and device for an IGBT power module, which can cover all possible short circuit conditions of a power device. Short-circuit tests are carried out on the IGBT in different switching states and through-current states, the short-circuit working conditions, short-circuit currents and test principles thereof are perfected and supplemented on the basis of the traditional test method, and the voltage and current stress of the short-circuit working conditions and the effectiveness of protective measures of the IGBT can be comprehensively checked. The method comprises the following working condition short-circuit tests: 1) Short-circuit condition 1: short circuit occurs at the moment when the IGBT is turned on, and the loop inductance value is low; 2) Short circuit condition 2: short circuit occurs at the moment of IGBT turn-on, and the loop inductance value is high; 3) Short circuit condition 3: short circuit occurs in the IGBT through-flow process; 4) Short circuit condition 4: the short circuit occurs in the process of the through flow of the IGBT anti-parallel diode; the method adopts a short circuit test device which comprises a direct current bus energy supplementing power supply, a direct current bus capacitor rapid discharge loop, an IGBT power module, a controller, a heating system and a data acquisition system.
Description
Technical Field
The invention relates to the technical field of power electronics, in particular to an all-condition short circuit test method and device for an IGBT power module.
Background
In recent years, the demands of power electronic technology in the fields of traditional industry, new energy fields, electric automobiles, power grid products and the like are continuously rising, and the core semiconductor full-control power device IGBT is wider and wider in application due to the fact that a control circuit is simple, and switching speed is high. When various internal short circuits or external faults of the power electronic equipment are grounded, according to different short circuit types, time and positions, short circuits of different modes can be generated on the IGBT device, short circuit current can reach 3-6 times of rated current of the IGBT device, at the moment, the IGBT device is subjected to combined action of various stresses such as voltage, current and heat, and if the IGBT device cannot successfully protect and cut off the short circuit current in a short time (generally 10 mu s), the power electronic equipment can be subjected to through discharge, and reliable operation of a system is affected. Therefore, aiming at the field application working condition of the IGBT, a short circuit test platform is built, various possible short circuit working conditions are simulated, and the method has important guiding function for researching the short circuit failure mode of the IGBT and detecting and protecting mechanism and parameter adaptation of the driving protection circuit.
The IGBT short-circuit protection mechanism mainly utilizes the special desaturation phenomenon when the device is short-circuited, and the device is turned off in time by checking the desaturation voltage. The traditional IGBT short circuit test method only focuses on a single short circuit mode of the device body, does not cover different short circuit working conditions comprehensively, and cannot check the short circuit characteristics, protection mechanisms and effectiveness of the IGBT in different current states.
Disclosure of Invention
In order to solve the defects of the traditional IGBT short circuit test method provided by the background technology, the short circuit characteristics of an IGBT device (comprising an anti-parallel freewheeling diode) are fully checked. Short-circuit tests are carried out on the IGBT in different switching states and through-current states, the short-circuit working conditions, short-circuit currents and test principles thereof are perfected and supplemented in a targeted manner on the basis of a traditional test method, and the effectiveness of the short-circuit working condition voltage, the current stress and the protection measures of the IGBT can be comprehensively checked.
In order to achieve the above purpose, the invention is realized by adopting the following technical scheme:
an IGBT power module all-condition short circuit test method comprises the following steps:
the method comprises the following short-circuit test under the working conditions:
1) Short-circuit condition 1: short circuit occurs at the moment when the IGBT is turned on, and the loop inductance value is low;
2) Short circuit condition 2: short circuit occurs at the moment of IGBT turn-on, and the loop inductance value is high;
3) Short circuit condition 3: short circuit occurs in the IGBT through-flow process;
4) Short circuit condition 4: the short circuit occurs in the process of the through flow of the IGBT anti-parallel diode;
the method adopts a short circuit test device to perform all-condition short circuit test on the IGBT power module; the short circuit test device comprises a direct current bus energy supplementing power supply, a direct current bus capacitor rapid discharge loop, an IGBT power module, a controller, a heating system and a data acquisition system; the direct current bus energy supplementing power supply is used for charging a direct current capacitor in the IGBT power module, the direct current bus capacitor rapid discharging loop is used for discharging the direct current capacitor in the IGBT power module, the heating system is used for controlling the temperature of an IGBT short circuit test device, and the data acquisition system is used for testing data of the IGBT power module; the controller is used for controlling the on-off of the IGBT.
Further, the topology of the IGBT power module is a topology with upper and lower bridge arm power device pairs, and comprises a two-level half-bridge topology, a two-level full-bridge topology, a two-level three-phase bridge topology, a three-level half-bridge topology, a three-level full-bridge topology and a three-level three-phase bridge topology.
Further, the method for performing the short-circuit condition 1 test comprises the following steps:
1) Selecting one IGBT in the IGBT power module to be tested as the IGBT to be tested, connecting a first voltage measurement probe of a data acquisition system to the upper end and the lower end of the IGBT to be tested, and connecting a second voltage measurement probe with a driving control end of the IGBT to be tested; the current measuring probe of the data acquisition system is connected with the upper end or the lower end of the IGBT to be measured;
2) Shorting two ends of a series circuit formed by other IGBTs which are communicated with a current circuit of the IGBT to be tested through copper bars;
3) Testing an initial state, wherein IGBTs of all bridge arms are in a low-voltage off state;
4) The other IGBT control ends are kept low-voltage turn-off all the time, the control end of the detected IGBT is driven by the controller to be switched into on by logic drive from low-voltage turn-off, the on pulse width is not more than 10 mu s in principle, and the detected IGBT completes the test of the short-circuit working condition 1.
Further, the method for performing the short-circuit condition 2 test comprises the following steps:
1) Selecting one IGBT in the IGBT power module to be tested as the IGBT to be tested, connecting a first voltage measurement probe of a data acquisition system to the upper end and the lower end of the IGBT to be tested, and connecting a second voltage measurement probe with a driving control end of the IGBT to be tested; the current measuring probe of the data acquisition system is connected with the upper end or the lower end of the IGBT to be measured;
2) Shorting two ends of a series circuit formed by other IGBTs communicated with a current circuit of the IGBT to be tested through mu H order-of-magnitude inductance;
3) Testing an initial state, wherein IGBTs of all bridge arms are in a low-voltage off state;
4) The other IGBT control ends are kept low-voltage turn-off all the time, the control end of the detected IGBT is driven by the controller to be switched into on by logic drive from low-voltage turn-off, the on pulse width is not more than 10 mu s in principle, and the detected IGBT completes the test of the short-circuit working condition 1.
Further, the method for performing the short-circuit condition 3 test comprises the following steps:
1) Selecting one IGBT in the IGBT power module to be tested as the IGBT to be tested, connecting a first voltage measurement probe of a data acquisition system to the upper end and the lower end of the IGBT to be tested, and connecting a second voltage measurement probe with a driving control end of the IGBT to be tested; the current measuring probe of the data acquisition system is connected with the upper end or the lower end of the IGBT to be measured;
2) Shorting two ends of a series loop formed by other IGBTs communicated with a current loop of the IGBT to be tested through a load reactance, wherein the load reactance inductance value depends on direct current voltage and IGBT current value set by a short circuit test;
3) Testing an initial state, wherein IGBTs of all bridge arms are in a low-voltage off state;
4) The IGBT control end to be tested is driven by a logic issued by a controller to be switched from low-voltage off to on, and the on pulse width depends on the DC voltage and the DC current value of the test working condition;
5) After the measured IGBT current value reaches the set requirement, other IGBTs execute the turn-on command; in order to ensure the short-circuit working condition 3 mode of the IGBT to be tested, other IGBT driving parameters are required to be adjusted, the IGBT is ensured to be turned on in the-mu s time, the turn-on time of the IGBT to be tested is started to be timed when other IGBT turn-on commands are issued, the turn-on time is not more than 10 mu s, and the IGBT to be tested completes the short-circuit working condition 3 test.
Further, the method for performing the short-circuit condition 4 test comprises the following steps:
1) Selecting one IGBT in the IGBT power module to be tested as the IGBT to be tested, connecting a first voltage measurement probe of a data acquisition system to the upper end and the lower end of the IGBT to be tested, and connecting a second voltage measurement probe with a driving control end of the IGBT to be tested; the current measuring probe of the data acquisition system is connected with the upper end or the lower end of the IGBT to be measured;
2) Connecting the upper end and the lower end of the IGBT to be tested through a load reactance, wherein the inductance value of the load reactance depends on the direct-current voltage and the diode current value set by a short circuit test;
3) In the initial test state, IGBTs of all bridge arms are in a low-voltage off state,
4) The other IGBTs are firstly controlled by a controller to issue logic drive to be switched from low-voltage off to on, and the on pulse width depends on the through current value of the test working condition;
5) After the current value of the on IGBT reaches the through current value required by setting, other IGBT control ends are driven by a controller to be converted into off by logic, the detected IGBT control ends are driven by the controller to be converted into on by low-voltage off by logic, and load reactance current flows through the detected IGBT anti-parallel diode;
6) After the freewheeling current of the detected IGBT anti-parallel diode reaches a steady state, other IGBT control ends are controlled by a controller to send logic drive to turn on from low-voltage turn-off, in order to ensure that the lower bridge arm keeps the short-circuit working condition 4, other IGBT driving parameters need to be adjusted to ensure that the detected IGBT is turned on within the time of-mu s, the detected IGBT turn-on time starts to be timed when other IGBT turn-on commands are sent, in principle, the detected IGBT anti-parallel diode completes the short-circuit working condition 4 test.
Further, the direct current bus energy supplementing power supply is correspondingly connected with the positive pole and the negative pole of the direct current side of the IGBT power module, and is simultaneously connected with the direct current bus capacitor rapid discharge loop in parallel.
Further, the heating system is connected with the cold plate inside the IGBT power module, and the temperature of the IGBT short circuit test device is controlled.
Further, all IGBT gate control ends are connected with the controller.
The device for realizing the full-working-condition short circuit test method of the IGBT power module comprises a direct-current bus energy supplementing power supply, a direct-current bus capacitor rapid discharge loop, the IGBT power module, a controller, a heating system and a data acquisition system;
the direct current bus energy supplementing power supply is correspondingly connected with the positive and negative poles on the direct current side of the IGBT power module and is connected with the direct current bus capacitor rapid discharge loop in parallel at the same time, and is used for charging the direct current capacitor in the IGBT power module;
the direct current bus capacitor rapid discharge loop is used for discharging the direct current capacitor in the IGBT power module;
the heating system is connected with the cold plate inside the IGBT power module and controls the temperature of the IGBT short circuit test device;
the data acquisition system is used for testing data of the IGBT power module; the system comprises a first voltage measuring probe, a second voltage measuring probe, a current measuring probe and an oscilloscope connected with the first voltage measuring probe and the second voltage measuring probe; the first voltage measuring probe is connected to the upper end and the lower end of the IGBT to be measured, and the second voltage measuring probe is also connected with the driving control end of the IGBT to be measured; the current measuring probe is connected with the upper end or the lower end of the IGBT to be measured;
the controller is connected with gate electrode control ends of all IGBTs and used for controlling the turning on or off of all IGBTs.
Compared with the prior art, the invention has the beneficial effects that:
1) The invention provides an all-condition short circuit test method for an IGBT power module, which comprises a short circuit test condition, a short circuit test topology and a short circuit test device. The method provides a platform for IGBT short-circuit test, can develop research aiming at IGBT short-circuit transient stress and failure mode, and has a guiding effect on the short-circuit characteristics of the power resolution device;
2) The invention provides an all-condition short circuit test method for an IGBT power module, which fully considers and covers possible short circuit conditions of an IGBT under the field operation condition;
3) The invention provides a full-working-condition short circuit test method for an IGBT power module, which fully checks the short circuit characteristics of various short circuit working conditions of an IGBT and an anti-parallel diode, and checks the power device more comprehensively, and has a guiding function on further knowing the short circuit characteristics of the power device, the electrical stress evolution of devices with different short circuit working conditions and the protection function of a driving circuit.
Fig. 1 is a basic block diagram of an IGBT power module short circuit test device of the invention.
Fig. 2 is a schematic diagram of a bridge arm IGBT short circuit condition 1 under a two-level half-bridge topology in the IGBT power module short circuit test method according to the embodiment of the invention;
FIG. 3 is a control logic diagram of FIG. 2;
fig. 4 is a schematic diagram of a bridge arm IGBT short circuit condition 2 under a two-level half-bridge topology in the IGBT power module short circuit test method according to the embodiment of the invention;
FIG. 5 is a control logic diagram of FIG. 4;
fig. 6 is a schematic diagram of a bridge arm IGBT short circuit condition 3 under a two-level half-bridge topology in the IGBT power module short circuit test method according to the embodiment of the invention;
FIG. 7 is a control logic diagram of FIG. 6;
fig. 8 is a schematic diagram of a bridge arm diode short-circuit condition 4 under a two-level half-bridge topology in the short-circuit test method of an IGBT power module according to the embodiment of the invention;
FIG. 9 is a control logic diagram of FIG. 8;
fig. 10 is a schematic diagram of a short circuit condition 1 of an IGBT power module in a bridge arm inner tube IGBT in a three-level half-bridge topology according to an embodiment of the present invention;
FIG. 11 is a control logic diagram of FIG. 10;
fig. 12 is a schematic diagram of a short circuit condition 1 of an IGBT power module according to an embodiment of the present invention, where the IGBT is an outer tube of a bridge arm under a three-level half-bridge topology;
fig. 13 is a control logic diagram of fig. 12.
The short circuit condition of the upper bridge arm IGBT and the lower bridge arm IGBT are in a dual mode.
Detailed Description
The following is a further description of embodiments of the invention, taken in conjunction with the accompanying drawings:
the invention discloses an all-condition short circuit test method for an IGBT power module, which comprises the following steps:
the method comprises the following short-circuit test under the working conditions:
1) Short-circuit condition 1: short circuit occurs at the moment when the IGBT is turned on, and the loop inductance value is low;
2) Short circuit condition 2: short circuit occurs at the moment of IGBT turn-on, and the loop inductance value is high;
3) Short circuit condition 3: short circuit occurs in the IGBT through-flow process;
4) Short circuit condition 4: the short circuit occurs in the process of the through flow of the IGBT anti-parallel diode;
according to the method, a short circuit test device is adopted to perform all-condition short circuit test on the IGBT power module.
As shown in FIG. 1, the method designs a short circuit test device, which comprises a direct current bus energy supplementing power supply, a direct current bus capacitor rapid discharging loop, an IGBT power module, a controller, a heating system, a data acquisition system and the like, wherein:
1) The direct current bus energy supplementing power supply consists of a direct current power supply DC, a series resistor R and an energy supplementing switch S1, and is used for providing voltage support and energy supplementation for a direct current capacitor of an IGBT power module, can randomly adjust the output direct current voltage range, has an output current limiting function, is internally provided with a circuit breaker, and can automatically break after the direct current voltage reaches a test requirement value;
and the direct-current bus energy supplementing power supply is correspondingly connected with the positive pole and the negative pole of the direct-current side of the IGBT power module and is simultaneously connected with the direct-current bus capacitor rapid discharge loop in parallel.
2) The direct current bus capacitor rapid discharge loop is formed by connecting a discharge switch S2 and a resistor R1 in series and is used for discharging the direct current capacitor energy of the IGBT power module after the test is completed and rapidly reducing the capacitor direct current voltage to a safe voltage range.
3) The topology of the IGBT power module is a topology with upper and lower bridge arm power device pairs, and comprises a two-level half-bridge topology, a two-level full-bridge topology, a two-level three-phase bridge topology, a three-level half-bridge topology, a three-level full-bridge topology and a three-level three-phase bridge topology. The IGBT power modules may be of different topologies as described above, including power devices (IGBT/diode pairs), drive circuits, drive voltages selecting appropriate voltage ranges according to device type, short-circuit conditions, cold plates for supporting the power devices, providing external heating system interfaces.
4) The controller can control the on-off logic, the through current, the short circuit pulse width and other time sequence logic of the device according to different short circuit working conditions; all IGBT gate electrode control ends are connected with the controller.
5) The heating system is connected with the cold plate inside the IGBT power module and is used for controlling the temperature of the IGBT short circuit test device;
6) The data acquisition system comprises a voltage measurement probe, a current measurement probe and an oscilloscope and is used for acquiring electric signal data of the IGBT short-circuit test device.
According to the all-condition short circuit test method of the IGBT power module, according to the four different test conditions and test topologies, the on-off logic of the device and the duration of the short circuit pulse width are controlled according to the direct current voltage, the device temperature, the device through current and the like, and the data acquisition system is used for acquiring the electric signal data of the IGBT device.
Further, the method for performing the short-circuit condition 1 test comprises the following steps:
1) Selecting one IGBT in the IGBT power module to be tested as the IGBT to be tested, connecting a first voltage measurement probe of a data acquisition system to the upper end and the lower end of the IGBT to be tested, and connecting a second voltage measurement probe with a driving control end of the IGBT to be tested; the current measuring probe of the data acquisition system is connected with the upper end or the lower end of the IGBT of the lower bridge arm;
2) Shorting two ends of a series circuit formed by other IGBTs which are communicated with a current circuit of the IGBT to be tested through copper bars;
3) Testing an initial state, wherein IGBTs of all bridge arms are in a low-voltage off state;
4) The other IGBT control ends are kept low-voltage turn-off all the time, the control end of the detected IGBT is driven by the controller to be switched into on by logic drive from low-voltage turn-off, the on pulse width is not more than 10 mu s in principle, and the detected IGBT completes the test of the short-circuit working condition 1.
Further, the method for performing the short-circuit condition 2 test comprises the following steps:
1) Selecting one IGBT in the IGBT power module to be tested as the IGBT to be tested, connecting a first voltage measurement probe of a data acquisition system to the upper end and the lower end of the IGBT to be tested, and connecting a second voltage measurement probe with a driving control end of the IGBT to be tested; the current measuring probe of the data acquisition system is connected with the upper end or the lower end of the IGBT to be measured;
2) Shorting two ends of a series circuit formed by other IGBTs communicated with a current circuit of the IGBT to be tested through mu H order-of-magnitude inductance;
3) Testing an initial state, wherein IGBTs of all bridge arms are in a low-voltage off state;
4) The other IGBT control ends are kept low-voltage turn-off all the time, the control end of the detected IGBT is driven by the controller to be switched into on by logic drive from low-voltage turn-off, the on pulse width is not more than 10 mu s in principle, and the detected IGBT completes the test of the short-circuit working condition 1.
Further, the method for performing the short-circuit condition 3 test comprises the following steps:
1) Selecting one IGBT in the IGBT power module to be tested as the IGBT to be tested, connecting a first voltage measurement probe of a data acquisition system to the upper end and the lower end of the IGBT to be tested, and connecting a second voltage measurement probe with a driving control end of the IGBT to be tested; the current measuring probe of the data acquisition system is connected with the upper end or the lower end of the IGBT to be measured;
2) Shorting two ends of a series loop formed by other IGBTs communicated with a current loop of the IGBT to be tested through a load reactance, wherein the load reactance inductance value depends on direct current voltage and IGBT current value set by a short circuit test;
3) Testing an initial state, wherein IGBTs of all bridge arms are in a low-voltage off state;
4) The IGBT control end to be tested is driven by a logic issued by a controller to be switched from low-voltage off to on, and the on pulse width depends on the DC voltage and the DC current value of the test working condition;
5) After the measured IGBT current value reaches the set requirement, other IGBTs execute the turn-on command; in order to ensure the short-circuit working condition 3 mode of the IGBT to be tested, other IGBT driving parameters are required to be adjusted, the IGBT is ensured to be turned on in the-mu s time, the turn-on time of the IGBT to be tested is started to be timed when other IGBT turn-on commands are issued, the turn-on time is not more than 10 mu s, and the IGBT to be tested completes the short-circuit working condition 3 test.
Further, the method for performing the short-circuit condition 4 test comprises the following steps:
1) Selecting one IGBT in the IGBT power module to be tested as the IGBT to be tested, connecting a first voltage measurement probe of a data acquisition system to the upper end and the lower end of the IGBT to be tested, and connecting a second voltage measurement probe with a driving control end of the IGBT to be tested; the current measuring probe of the data acquisition system is connected with the upper end or the lower end of the IGBT to be measured;
2) Connecting the upper end and the lower end of the IGBT to be tested through a load reactance, wherein the inductance value of the load reactance depends on the direct-current voltage and the diode current value set by a short circuit test;
3) In the initial test state, IGBTs of all bridge arms are in a low-voltage off state,
4) The other IGBTs are firstly controlled by a controller to issue logic drive to be switched from low-voltage off to on, and the on pulse width depends on the through current value of the test working condition;
5) After the current value of the on IGBT reaches the through current value required by setting, other IGBT control ends are driven by a controller to be converted into off by logic, the detected IGBT control ends are driven by the controller to be converted into on by low-voltage off by logic, and load reactance current flows through the detected IGBT anti-parallel diode;
6) After the freewheeling current of the detected IGBT anti-parallel diode reaches a steady state, other IGBT control ends are controlled by a controller to send logic drive to turn on from low-voltage turn-off, in order to ensure that the lower bridge arm keeps the short-circuit working condition 4, other IGBT driving parameters need to be adjusted to ensure that the detected IGBT is turned on within the time of-mu s, the detected IGBT turn-on time starts to be timed when other IGBT turn-on commands are sent, in principle, the detected IGBT anti-parallel diode completes the short-circuit working condition 4 test.
[ EXAMPLES ]
The technical features of the different embodiments of the invention described below may be combined with one another as long as they do not conflict with one another.
Example 1: in a typical case of a two-level half-bridge topology, a lower bridge arm IGBT (T2 is a lower bridge arm IGBT in the figure, T1 is an upper bridge arm IGBT) is a measured IGBT:
1. the short circuit condition 1, as shown in fig. 2-3, is tested as follows:
step 1.1: the direct current bus energy supplementing power supply is correspondingly connected with the positive and negative poles on the direct current side of the IGBT power module and is simultaneously connected with the direct current bus capacitor rapid discharge loop in parallel;
step 1.2: the first end (upper end) and the second end (lower end) of the upper bridge arm IGBT are in short circuit through copper bars, the short circuit path is as short as possible, and the equivalent connection inductance is within hundred nH;
step 1.3: setting related parameters according to the test voltage and temperature requirements;
step 1.4: according to the control logic, the corresponding IGBT driving circuit is controlled to execute an on-off command, and the method concretely comprises the following steps:
1) Testing an initial state, wherein the IGBTs of the upper bridge arm and the lower bridge arm are in a low-voltage off state;
2) The IGBT control end of the upper bridge arm always keeps low-voltage turn-off, the IGBT control end of the lower bridge arm is driven by a logic issued by a controller to be converted into on by low-voltage turn-off, the on pulse width is not more than 10 mu s in principle, the IGBT of the lower bridge arm completes a short circuit working condition 1 test, and the device bears relevant electric stress;
step 1.5: the data acquisition system completely records voltage and current waveforms, and evaluates the short-circuit characteristics and the driving short-circuit protection characteristics of the device based on the test data.
2. The short-circuit condition 2, as shown in fig. 4-5, has the following test steps:
step 2.1: the implementation steps are similar to those of the short-circuit working condition 1, only the first end and the second end of the IGBT of the upper bridge arm are required to be connected through a load reactance, the load reactance inductance value is set at mu H level, and the rising rate of the short-circuit current of the IGBT is limited;
step 2.2: other loop connection, control logic and the like are the same as those of the short-circuit working condition 1, the lower bridge arm IGBT completes the short-circuit working condition 2 test, and test data are used for researching the difference between the short-circuit characteristics and the driving protection characteristics of the device under the two short-circuit working conditions.
3. The short-circuit condition 3, as shown in fig. 6-7, is tested as follows:
step 3.1: the implementation steps are similar to the short-circuit working condition 2, and only the first end and the second end of the bridge arm IGBT on the test loop are connected through a load reactance, wherein the load reactance inductance value depends on the direct-current voltage and the IGBT through-current value set by the short-circuit test.
Step 3.2: the controller controls the corresponding IGBT driving circuit to execute the on-off command according to the control logic of the short-circuit working condition 3, and the method specifically comprises the following steps:
1) Testing an initial state, wherein the IGBTs of the upper bridge arm and the lower bridge arm are in a low-voltage off state;
2) The IGBT control end of the lower bridge arm is driven by a logic issued by a controller to be switched from low-voltage off to on, and the on pulse width depends on the direct-current voltage and the on current value of the test working condition;
3) After the current value of the device reaches the set requirement, the IGBT of the upper bridge arm executes an opening command, in order to ensure the short-circuit working condition 3 mode of the IGBT of the lower bridge arm, the driving parameters of the IGBT of the upper bridge arm need to be properly adjusted, the IGBT of the upper bridge arm is ensured to be opened in a very short time, the opening time of the IGBT of the lower bridge arm is timed while the opening command of the IGBT of the upper bridge arm is issued, and in principle, the opening time of the IGBT of the lower bridge arm is not more than 10 mu s, and the IGBT of the lower bridge arm completes the short-circuit working condition 3 test;
step 3.3: the test data are used for researching the difference between the short circuit characteristic and the driving protection characteristic of the device in the short circuit working condition 3 and the working conditions 1 and 2.
4. The short-circuit condition 4, as shown in fig. 8-9, is tested as follows:
step 4.1: the direct current bus energy supplementing power supply is correspondingly connected with the positive and negative poles on the direct current side of the IGBT power module and is simultaneously connected with the direct current bus capacitor rapid discharge loop in parallel;
step 4.2: the first end and the second end of the IGBT of the lower bridge arm are connected through a load reactance, and the inductance value of the load reactance depends on the direct-current voltage and the diode current value set by a short circuit test;
step 4.3: setting related parameters according to the test voltage and temperature requirements;
step 4.4: according to the control logic, the corresponding IGBT driving circuit is controlled to execute an on-off command, and the method concretely comprises the following steps:
1) Testing an initial state, wherein the IGBTs of the upper bridge arm and the lower bridge arm are in a low-voltage off state;
2) The upper bridge arm IGBT is firstly controlled by a controller to issue logic drive to be switched from low-voltage off to on, and the on pulse width depends on the through current value of the test working condition;
3) After the current value of the device reaches the set requirement, the IGBT control end of the upper bridge arm is driven by a logic issued by a controller to be converted into turn-off, the IGBT control end of the lower bridge arm is driven by the logic issued by the controller to be converted into turn-on from low-voltage turn-off, and load reactance current flows through an anti-parallel diode of the IGBT of the lower bridge arm;
4) After reaching a steady state, the control end of the IGBT of the upper bridge arm is switched from low-voltage turn-off to turn-on by the controller, in order to ensure that the lower bridge arm keeps a short-circuit working condition 4, the driving parameters of the IGBT of the upper bridge arm need to be properly adjusted, the IGBT of the upper bridge arm is ensured to be turned on in extreme time, the turn-on time of the IGBT of the lower bridge arm is timed while an on command of the IGBT of the upper bridge arm is issued, in principle, the turn-on time of the IGBT of the lower bridge arm is not more than 10 mu s, and the anti-parallel diode of the IGBT of the lower bridge arm completes a short-circuit working condition 4 test;
step 4.5: the data acquisition system completely records voltage and current waveforms, and evaluates the short-circuit characteristics and the driving short-circuit protection characteristics of the device based on the test data. The test data are used for researching the short circuit characteristics of the device in the short circuit working condition 4, particularly the conversion process and the drive protection characteristics of the short circuit electric stress of the lower bridge arm IGBT and the anti-parallel diode, and the differences between the drive protection characteristics and the working conditions 1, 2 and 3.
Example 2: three-level half-bridge topology typical case:
1. as shown in fig. 10-11, the short-circuit condition 1 of the lower bridge arm IGBT3 (T3 in the drawing) is tested as follows:
step 5.1: the direct current bus energy supplementing power supply is correspondingly connected with the positive and negative poles on the direct current side of the IGBT power module and is simultaneously connected with the direct current bus capacitor rapid discharge loop in parallel;
step 5.2: the first end of the upper bridge arm IGBT1 and the second end of the IGBT2 are in short circuit through copper bars, the short circuit path is as short as possible, and the equivalent connection inductance is within hundred nH;
step 5.3: setting related parameters according to the test voltage and temperature requirements;
step 5.4: according to control logic, a driving pulse control command is issued, wherein the initial state is tested, all IGBTs are in a low-voltage off state, the control ends of IGBT1, IGBT2 and IGBT4 are kept at low-voltage off all the time, the control end of IGBT3 is driven by the logic issued by a controller to be converted into on by low-voltage off, the on pulse width is not more than 10 mu s in principle, short-circuit current passes through a direct-current positive electrode, a lower bridge arm IGBT3 and a clamp diode D6 return to a direct-current midpoint, the lower bridge arm IGBT3 completes a short-circuit working condition 1 test, and the device bears relevant electric stress;
step 5.5: the data acquisition system completely records voltage and current waveforms, and evaluates the three-level multi-device short circuit characteristic and the driving short circuit protection characteristic based on the test data.
2. As shown in fig. 12-13, the short-circuit condition 1 of the lower bridge arm IGBT4 (T4 in the drawing) is tested as follows:
step 6.1: the direct current bus energy supplementing power supply is correspondingly connected with the positive and negative poles on the direct current side of the IGBT power module and is simultaneously connected with the direct current bus capacitor rapid discharge loop in parallel;
step 6.2: the first end of the clamping diode D6 and the first end of the lower bridge arm IGBT4 are in short circuit through copper bars, the short circuit path is as short as possible, and the equivalent connection inductance is within hundred nH;
step 6.3: setting related parameters according to the test voltage and temperature requirements;
step 6.4: according to control logic, a driving pulse control command is issued, wherein an initial state is tested, all IGBTs are in a low-voltage off state, the control ends of an IGBT1, an IGBT2 and an IGBT3 are kept at low-voltage off all the time, the control end of an IGBT4 is driven by the logic issued by a controller to be converted into on by low-voltage off, the on pulse width is not more than 10 mu s in principle, short-circuit current passes through a direct-current midpoint, a lower bridge arm IGBT4 returns to a direct-current cathode, the lower bridge arm IGBT4 completes a short-circuit working condition 1 test, and the device bears related electric stress;
step 6.5: the data acquisition system completely records voltage and current waveforms, and evaluates the short-circuit characteristics and the driving short-circuit protection characteristics of the three-level device based on the test data.
The short-circuit working condition 1 of the three-level upper bridge arm device is completely dual with the short-circuit working condition 1 of the lower bridge arm device. Similarly, other short circuit conditions of the two-level topology are also applicable to the three-level topology.
Note that: if the short-circuit protection function is verified, the IGBT is turned off directly by the short-circuit protection function or is turned off by using an active clamp. If short-circuit protection is not needed temporarily, a fixed pulse turn-off test is needed, and a large resistor (soft turn-off) is used for turning off the IGBT.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that the different dependent claims and the features described herein may be combined in ways other than as described in the original claims. It is also to be understood that features described in connection with separate embodiments may be used in other described embodiments.
The above examples are implemented on the premise of the technical scheme of the present invention, and detailed implementation manners and specific operation processes are given, but the protection scope of the present invention is not limited to the above examples. All other embodiments, which can be made by those skilled in the art without the inventive effort, are intended to be within the scope of the present invention.
Claims (10)
1. The full-working-condition short circuit test method for the IGBT power module is characterized by comprising the following steps of:
the method comprises the following short-circuit test under the working conditions:
1) Short-circuit condition 1: short circuit occurs at the moment when the IGBT is turned on, and the loop inductance value is low;
2) Short circuit condition 2: short circuit occurs at the moment of IGBT turn-on, and the loop inductance value is high;
3) Short circuit condition 3: short circuit occurs in the IGBT through-flow process;
4) Short circuit condition 4: the short circuit occurs in the process of the through flow of the IGBT anti-parallel diode;
the method adopts a short circuit test device to perform all-condition short circuit test on the IGBT power module; the short circuit test device comprises a direct current bus energy supplementing power supply, a direct current bus capacitor rapid discharge loop, an IGBT power module, a controller, a heating system and a data acquisition system; the direct current bus energy supplementing power supply is used for charging a direct current capacitor in the IGBT power module, the direct current bus capacitor rapid discharging loop is used for discharging the direct current capacitor in the IGBT power module, the heating system is used for controlling the temperature of an IGBT short circuit test device, and the data acquisition system is used for testing data of the IGBT power module; the controller is used for controlling the on-off of the IGBT.
2. The method for testing the full-condition short circuit of the IGBT power module according to claim 1, wherein the topology of the IGBT power module is a topology with upper and lower bridge arm power device pairs and comprises a two-level half-bridge topology, a two-level full-bridge topology, a two-level three-phase bridge topology, a three-level half-bridge topology, a three-level full-bridge topology and a three-level three-phase bridge topology.
3. The all-condition short circuit test method for the IGBT power module according to claim 1, wherein the method for carrying out the short circuit condition 1 test comprises the following steps:
1) Selecting one IGBT in the IGBT power module to be tested as the IGBT to be tested, connecting a first voltage measurement probe of a data acquisition system to the upper end and the lower end of the IGBT to be tested, and connecting a second voltage measurement probe with a driving control end of the IGBT to be tested; the current measuring probe of the data acquisition system is connected with the upper end or the lower end of the IGBT to be measured;
2) Shorting two ends of a series circuit formed by other IGBTs which are communicated with a current circuit of the IGBT to be tested through copper bars;
3) Testing an initial state, wherein IGBTs of all bridge arms are in a low-voltage off state;
4) The other IGBT control ends are kept low-voltage turn-off all the time, the control end of the detected IGBT is driven by the controller to be driven by logic to be switched into on by low-voltage turn-off, the on pulse width is not more than 10 mu s, and the detected IGBT completes the test of the short-circuit working condition 1.
4. The method for testing the all-condition short circuit of the IGBT power module according to claim 1, wherein the method for testing the short circuit condition 2 comprises the following steps:
1) Selecting one IGBT in the IGBT power module to be tested as the IGBT to be tested, connecting a first voltage measurement probe of a data acquisition system to the upper end and the lower end of the IGBT to be tested, and connecting a second voltage measurement probe with a driving control end of the IGBT to be tested; the current measuring probe of the data acquisition system is connected with the upper end or the lower end of the IGBT to be measured;
2) Shorting two ends of a series circuit formed by other IGBTs communicated with a current circuit of the IGBT to be tested through mu H order-of-magnitude inductance;
3) Testing an initial state, wherein IGBTs of all bridge arms are in a low-voltage off state;
4) The other IGBT control ends are kept low-voltage turn-off all the time, the control end of the detected IGBT is driven by the controller to be driven by logic to be switched into on by low-voltage turn-off, the on pulse width is not more than 10 mu s, and the detected IGBT completes the test of the short-circuit working condition 1.
5. The method for testing the all-condition short circuit of the IGBT power module according to claim 1, wherein the method for testing the short circuit condition 3 comprises the following steps:
1) Selecting one IGBT in the IGBT power module to be tested as the IGBT to be tested, connecting a first voltage measurement probe of a data acquisition system to the upper end and the lower end of the IGBT to be tested, and connecting a second voltage measurement probe with a driving control end of the IGBT to be tested; the current measuring probe of the data acquisition system is connected with the upper end or the lower end of the IGBT to be measured;
2) Shorting two ends of a series loop formed by other IGBTs communicated with a current loop of the IGBT to be tested through a load reactance, wherein the load reactance inductance value depends on direct current voltage and IGBT current value set by a short circuit test;
3) Testing an initial state, wherein IGBTs of all bridge arms are in a low-voltage off state;
4) The IGBT control end to be tested is driven by a logic issued by a controller to be switched from low-voltage off to on, and the on pulse width depends on the DC voltage and the DC current value of the test working condition;
5) After the measured IGBT current value reaches the set requirement, other IGBTs execute the turn-on command; in order to ensure the short-circuit working condition 3 mode of the IGBT to be tested, other IGBT driving parameters are required to be adjusted, the IGBT is ensured to be turned on in the-mu s time, the turn-on time of the IGBT to be tested is started to be timed when other IGBT turn-on commands are issued, the turn-on time is not more than 10 mu s, and the IGBT to be tested completes the short-circuit working condition 3 test.
6. The method for testing the all-condition short circuit of the IGBT power module according to claim 1, wherein the method for testing the short circuit condition 4 comprises the following steps:
1) Selecting one IGBT in the IGBT power module to be tested as the IGBT to be tested, connecting a first voltage measurement probe of a data acquisition system to the upper end and the lower end of the IGBT to be tested, and connecting a second voltage measurement probe with a driving control end of the IGBT to be tested; the current measuring probe of the data acquisition system is connected with the upper end or the lower end of the IGBT to be measured;
2) Connecting the upper end and the lower end of the IGBT to be tested through a load reactance, wherein the inductance value of the load reactance depends on the direct-current voltage and the diode current value set by a short circuit test;
3) In the initial test state, IGBTs of all bridge arms are in a low-voltage off state,
4) The other IGBTs are firstly controlled by a controller to issue logic drive to be switched from low-voltage off to on, and the on pulse width depends on the through current value of the test working condition;
5) After the current value of the on IGBT reaches the through current value required by setting, other IGBT control ends are driven by a controller to be converted into off by logic, the detected IGBT control ends are driven by the controller to be converted into on by low-voltage off by logic, and load reactance current flows through the detected IGBT anti-parallel diode;
6) After the freewheeling current of the detected IGBT anti-parallel diode reaches a steady state, other IGBT control ends are controlled by a controller to send logic drive to turn on from low-voltage turn-off, in order to ensure that a detected bridge arm keeps a short-circuit working condition 4, other IGBT driving parameters need to be adjusted to ensure that the detected bridge arm is turned on within the time of-mu s, the detected IGBT turn-on time is started to be timed to be not more than 10 mu s while other IGBT turn-on commands are sent, and the detected IGBT anti-parallel diode completes a short-circuit working condition 4 test.
7. The full-working-condition short circuit test method for the IGBT power module according to claim 1, wherein the direct-current bus energy supplementing power supply is correspondingly connected with a direct-current side positive electrode and a direct-current side negative electrode of the IGBT power module and is connected with a direct-current bus capacitor rapid discharging loop in parallel.
8. The all-condition short circuit test method for the IGBT power module according to claim 1, wherein the heating system is connected with an internal cold plate of the IGBT power module, and the temperature of an IGBT short circuit test device is controlled.
9. The all-condition short circuit test method for the IGBT power module according to claim 1, wherein all gate control ends of the IGBT are connected with the controller.
10. The device for realizing the full-working-condition short circuit test method of the IGBT power module according to claim 1 is characterized by comprising a direct-current bus energy supplementing power supply, a direct-current bus capacitor rapid discharge loop, the IGBT power module, a controller, a heating system and a data acquisition system;
the direct current bus energy supplementing power supply is correspondingly connected with the positive and negative poles on the direct current side of the IGBT power module and is connected with the direct current bus capacitor rapid discharge loop in parallel at the same time, and is used for charging the direct current capacitor in the IGBT power module;
the direct current bus capacitor rapid discharge loop is used for discharging the direct current capacitor in the IGBT power module;
the heating system is connected with the cold plate inside the IGBT power module and controls the temperature of the IGBT short circuit test device;
the data acquisition system is used for testing data of the IGBT power module; the system comprises a first voltage measuring probe, a second voltage measuring probe, a current measuring probe and an oscilloscope connected with the first voltage measuring probe and the second voltage measuring probe; the first voltage measuring probe is connected to the upper end and the lower end of the IGBT to be measured, and the second voltage measuring probe is also connected with the driving control end of the IGBT to be measured; the current measuring probe is connected with the upper end or the lower end of the IGBT to be measured;
the controller is connected with gate electrode control ends of all IGBTs and used for controlling the turning on or off of all IGBTs.
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