CN116953461A - 用于监测多个并联连接的半导体开关的方法和设备 - Google Patents

用于监测多个并联连接的半导体开关的方法和设备 Download PDF

Info

Publication number
CN116953461A
CN116953461A CN202310473743.XA CN202310473743A CN116953461A CN 116953461 A CN116953461 A CN 116953461A CN 202310473743 A CN202310473743 A CN 202310473743A CN 116953461 A CN116953461 A CN 116953461A
Authority
CN
China
Prior art keywords
semiconductor switch
semiconductor switches
semiconductor
monitored
load current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310473743.XA
Other languages
English (en)
Chinese (zh)
Inventor
A·克莱因
C·卡默
C·弗里德里希
M·朔贝尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of CN116953461A publication Critical patent/CN116953461A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/327—Testing of circuit interrupters, switches or circuit-breakers
    • G01R31/3277—Testing of circuit interrupters, switches or circuit-breakers of low voltage devices, e.g. domestic or industrial devices, such as motor protections, relays, rotation switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)
CN202310473743.XA 2022-04-27 2023-04-27 用于监测多个并联连接的半导体开关的方法和设备 Pending CN116953461A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102022204075.9 2022-04-27
DE102022204075.9A DE102022204075A1 (de) 2022-04-27 2022-04-27 Verfahren und Vorrichtung zur Überwachung einer Vielzahl parallelgeschalteter Halbleiterschalter

Publications (1)

Publication Number Publication Date
CN116953461A true CN116953461A (zh) 2023-10-27

Family

ID=88306662

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310473743.XA Pending CN116953461A (zh) 2022-04-27 2023-04-27 用于监测多个并联连接的半导体开关的方法和设备

Country Status (4)

Country Link
US (1) US12235321B2 (cg-RX-API-DMAC7.html)
JP (1) JP2023163156A (cg-RX-API-DMAC7.html)
CN (1) CN116953461A (cg-RX-API-DMAC7.html)
DE (1) DE102022204075A1 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102024138847B3 (de) * 2024-12-19 2026-03-26 Schaeffler Technologies AG & Co. KG Verfahren zum Überwachen einer Schaltung, Steuerungsvorrichtung und Schaltung
CN121522439A (zh) * 2025-11-24 2026-02-13 滨州市沾化区通达检测有限公司 一种汽车智能化综合性能检测系统

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015226628A1 (de) 2015-12-23 2017-06-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Stromüberwachung einer Mehrzahl von Halbleiterschaltern
DE102016223511A1 (de) 2016-11-28 2018-05-30 Robert Bosch Gmbh Verfahren zum Erkennen eines Ausfalls eines parallel geschalteten Halbleiters
DE102018114375B4 (de) * 2018-06-15 2024-06-13 Infineon Technologies Ag Leistungselektronikanordnung

Also Published As

Publication number Publication date
JP2023163156A (ja) 2023-11-09
US20230349975A1 (en) 2023-11-02
US12235321B2 (en) 2025-02-25
DE102022204075A1 (de) 2023-11-02

Similar Documents

Publication Publication Date Title
US11169201B2 (en) Diagnostic device and method to establish degradation state of electrical connection in power semiconductor device
CN106301150B (zh) 电驱动系统中功率半导体器件中的温度估计
US11480605B2 (en) Method and apparatus for detecting ageing of a power electronic apparatus comprising a semiconductor component, and power electronic system
CN106291303B (zh) 电力驱动系统中的功率半导体器件的老化的确定
CN100466473C (zh) 并联mosfet的失效预测
Tian et al. Monitoring IGBT's health condition via junction temperature variations
JP6623556B2 (ja) 半導体装置
CN113949327B (zh) 用于操作电动车辆驱动器的功率模块
JP2007502569A (ja) 電力変換回路及び電力制御回路の動作及び回路
US12235321B2 (en) Method and device for monitoring a plurality of parallel-connected semiconductor switches
CN104303063A (zh) 用于测定功率电子装置的半导体器件的温度标定特征曲线的方法和装置
US11923785B2 (en) Power module for the operation of an electric vehicle drive with improved temperature determination of the power semiconductor
Chen et al. Driver Integrated Online R ds-on Monitoring Method for SiC Power Converters
CN112858887B (zh) 用于集成电路封装的分层缺陷检测方法
Krone et al. Advanced condition monitoring system based on on-line semiconductor loss measurements
JP2023163156A5 (cg-RX-API-DMAC7.html)
Sarkany et al. Comparison of different power cycling strategies for accelerated lifetime testing of power devices
US20250020711A1 (en) Method for monitoring a semiconductor switch for failure and inverter switching
CN115598485B (zh) 直流固态断路器的功率管老化测试装置及其测试方法
Brown et al. Turn-off time as a precursor for gate bipolar transistor latch-up faults in electric motor drives
Barón et al. Virtual junction temperature estimation during dynamic power cycling tests
US12607585B2 (en) Method for measuring degradation of thermal resistance between power semiconductor and heat sink, and control device for power semiconductor
Quitadamo et al. A new technique to check the correct mounting of the power module heatsinks
US20220107363A1 (en) Method and device for monitoring connection of semiconductor of power module
US20260106445A1 (en) Electronic fuse device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination