CN116952383A - Method for improving temperature measurement precision of wafer by effectively cutting off interference - Google Patents
Method for improving temperature measurement precision of wafer by effectively cutting off interference Download PDFInfo
- Publication number
- CN116952383A CN116952383A CN202310892216.2A CN202310892216A CN116952383A CN 116952383 A CN116952383 A CN 116952383A CN 202310892216 A CN202310892216 A CN 202310892216A CN 116952383 A CN116952383 A CN 116952383A
- Authority
- CN
- China
- Prior art keywords
- wafer
- quartz tube
- temperature measurement
- pyrometer
- notch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000009529 body temperature measurement Methods 0.000 title claims abstract description 28
- 238000005520 cutting process Methods 0.000 title claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000010453 quartz Substances 0.000 claims abstract description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 47
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 25
- 238000011010 flushing procedure Methods 0.000 claims abstract description 18
- 230000006698 induction Effects 0.000 claims abstract description 15
- 238000007789 sealing Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- 230000004044 response Effects 0.000 claims description 9
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 238000002834 transmittance Methods 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 6
- 238000010926 purge Methods 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 21
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000002845 discoloration Methods 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 description 10
- 239000002775 capsule Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0887—Integrating cavities mimicking black bodies, wherein the heat propagation between the black body and the measuring element does not occur within a solid; Use of bodies placed inside the fluid stream for measurement of the temperature of gases; Use of the reemission from a surface, e.g. reflective surface; Emissivity enhancement by multiple reflections
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention discloses a method for improving temperature measurement precision of a wafer by effectively cutting interference, which comprises the wafer or a silicon carbide ring, wherein a notch is arranged on the side edge of the wafer or the silicon carbide ring, a quartz tube and a wafer induction pyrometer with the thickness of 5 mu m are arranged on the notch, the wafer induction pyrometer is arranged on a surface which directly faces the wafer or the silicon carbide ring, the wafer induction pyrometer is used for directly reading the silicon carbide ring with emissivity close to a blackbody, so that the problem that temperature measurement errors are not caused by discoloration when the back surface of the wafer is measured is solved, nitrogen for purifying air is filled in the quartz tube, a nitrogen flushing pipeline communicated with the quartz tube is arranged on the side edge of the quartz tube, more than one lamp is arranged at intervals on the outer side of the wafer or the silicon carbide ring, all lamps are arranged on the same side as the notch, a reflecting surface is arranged below all lamps, and a lens is arranged below the quartz tube. The invention improves the temperature detection precision.
Description
Technical Field
The invention relates to the technical field of soldering paste, in particular to a method for improving the temperature measurement precision of a wafer by effectively cutting off interference.
Background
Among heat treatment techniques required for semiconductor, LED and solar processes, a rapid thermal annealing system (RTA system) of a semiconductor manufacturing process performs a rapid heat treatment apparatus by using a halogen lamp and has the highest performance, but is easily interfered to affect a wafer temperature measurement accuracy because a wafer induction pyrometer receives a wavelength value in various wavelengths emitted as a lamp, i.e., a wavelength value in a 3.3 or 4.5 μm wavelength band, and thus cannot measure an accurate wafer temperature, and its structure receives a 3.3 or 4.5 μm interference wavelength value emitted from a high temperature (e.g., 400 ℃) quartz chamber in the process. To solve this problem, there are generally the following ways:
1. the wafer temperature is measured by subtracting the measurement value of the quartz chamber pyrometer from the measurement value of the wafer sensing pyrometer, so that the wafer sensing pyrometer needs to be selected to select a long wavelength band beyond the Lamp wavelength (0.2-4.7 μm), and the measurement wavelength value of the selected pyrometer must be 100% of the corresponding band wavelengths of the blocking Lamp and the high temperature quartz chamber, but this is not a fundamental solution if a specific wafer sensing pyrometer is selected each time;
2. when a short-wavelength pyrometer is used for measuring temperature, a long-wavelength region (4-5 mu m) emitted by a halogen lamp can cause the problem that a window cannot be used because the long-wavelength pyrometer cannot penetrate quartz, the temperature of a wafer can be directly measured even if the window is not arranged, a lamp tube completely shields a pyrometer temperature measuring error, and a pyrometer with a wider temperature measuring range is selected;
in summary, the pyrometers of AG 3.3 or 4.5 μm each have serious interference drawbacks, and improvements are needed.
Disclosure of Invention
The invention aims to solve the defects of the prior art and provide a dustproof drying heat dissipation device, which solves the problem that the detection precision is affected due to the interference problem of a pyrometer in the prior art.
In order to achieve the above object, the present invention provides a method for improving temperature measurement accuracy of a wafer by effectively cutting interference, including a wafer or a silicon carbide ring, which is characterized in that: the wafer or the silicon carbide ring side is provided with the breach be provided with a quartz capsule and 5 mu m thickness's wafer response pyrometer on the breach, wafer response pyrometer install on the face of direct orientation wafer or silicon carbide ring, utilize the wafer response pyrometer direct reading emissivity to be close the silicon carbide ring of blackbody to this can not lead to temperature measurement error to measure accurate temperature because of discolouring when measuring the wafer back the quartz capsule intussuseption is filled with the nitrogen gas that is used for the air-purifying the quartz capsule side is provided with the nitrogen gas flushing pipeline that communicates with the quartz capsule the outside interval of wafer or silicon carbide ring is provided with more than one lamp, all lamps and breach homonymy setting, and be provided with a reflection of light face in the below of all lamps the quartz capsule below is provided with lens.
Preferably, the quartz tube is a quartz tube blocking long wavelengths of 5 μm or more.
Preferably, the quartz tube is purged by continuously supplying nitrogen.
Preferably, the notch is a window made of a sapphire material with excellent transmittance at a wavelength of 5 mu m and is welded with the quartz tube process cavity to form an integral structure.
Preferably, the notch is made of a sapphire material with the diameter of 12mm and the thickness of 1mm, and is connected with the inner wall of the quartz tube in a welding mode.
Preferably, the nitrogen flushing pipeline and the notch are required to be communicated, and the diameter of the nitrogen flushing pipeline is smaller than that of the notch.
Preferably, a sealing structure is required to be arranged at the joint of the nitrogen flushing pipeline and the nitrogen conveyer.
Preferably, in this embodiment, the notch is of a cylindrical structure, and a sealing ring is disposed at a connection position between an inner wall of the notch and the lens.
Preferably, the notch (2) and the nitrogen flushing pipeline (5) form an L-shaped structure.
The invention also discloses a wafer induction pyrometer prepared by the method for improving the temperature measurement precision of the wafer by effectively cutting off the interference, which is characterized in that the wafer induction pyrometer can more accurately measure the temperature of the wafer or the silicon carbide ring as a measuring object under the condition of 100% interference removal.
The method for improving the temperature measurement precision of the wafer by effectively cutting off the interference has the beneficial effects that:
1. the wafer induction pyrometer (5 mu m) adopted by the invention is installed to be directly oriented to a measuring object, namely a wafer or a silicon carbide ring. The silicon carbide ring with emissivity close to that of a black body (1.0) can be read, so that temperature measurement errors caused by color change can not be generated when the back surface of the wafer is measured, and the accurate temperature can be measured;
2. in order to 100% block the interference from the lamp (0.3-4.7 μm), a quartz tube blocking longer wavelengths than 5 μm needs to be used;
3. to ensure minor errors in measurement values and reproducibility of measurement due to contamination of the pyrometer lens, it is formulated to continuously supply a nitrogen purging operation;
4. the window made of the sapphire material with excellent transmittance at the wavelength of 5 mu m can be welded with the quartz process cavity to form an integrated structure for use, and the window can be effectively applied to processes with important oxygen ppm such as metal annealing and the like;
5. the wafer induction pyrometer designed according to the invention can more accurately measure the temperature of a wafer or silicon carbide ring as a measurement object with 100% interference removal.
Drawings
FIG. 1 is a schematic diagram of a novel wafer sensing pyrometer;
fig. 2 is a partial enlarged view at a of fig. 1.
Fig. 3 is a graph of the IR transmittance of a sapphire window.
Fig. 4 is a table of recipe settings for each parameter at 900 c for 8 seconds.
Fig. 5 is a waveform diagram of the reading and control of the pyrometer at 900 c for 8 seconds.
Fig. 6 is a waveform diagram of setting and control at 900 c and peak exit within 1 second.
Fig. 7 is a graph of a planned distribution control waveform at 750 ℃.
Fig. 8 is a graph of a planned distribution control waveform at 1050 ℃.
In the reference numerals: wafer or silicon carbide ring 1, notch 2, quartz tube 3, wafer sensing pyrometer 4, nitrogen flush pipe 5, lamp 6, reflecting surface 7, lens 8, sealing ring 801.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described in the following in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without inventive faculty, are intended to be within the scope of the present invention, based on the embodiments of the present invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Example 1:
as shown in fig. 1 to 8, the method for improving the temperature measurement accuracy of a wafer by effectively cutting off interference provided in this embodiment includes a wafer or a silicon carbide ring 1, and is characterized in that: the wafer or silicon carbide ring 1 side is provided with breach 2 be provided with a quartz tube 3 and 5 mu m thickness's wafer response pyrometer 4 on breach 2, wafer response pyrometer 4 install on the face of direct orientation wafer or silicon carbide ring 1, utilize wafer response pyrometer 4 direct reading emissivity to be close the carborundum ring of blackbody, so that solve can not lead to temperature measurement error to measure accurate temperature because of discolouring when measuring the wafer back the quartz tube 3 intussuseption is filled with the nitrogen gas that is used for the air-purifying quartz tube 3 the quartz tube 3 side is provided with the nitrogen gas flushing pipeline 5 that communicates with quartz tube 3 the outside interval of wafer or carborundum ring 1 is provided with more than one lamp 6, all lamps 6 and breach 2 homonymy set up, and be provided with a reflection of light face 7 in the below of all lamps 6 quartz tube 3 below is provided with lens 8.
In the present exemplary embodiment, the wafer or silicon carbide ring 1 is installed directly on the measuring object, i.e. the wafer or silicon carbide ring, by means of the wafer induction pyrometer (5 μm) used. In particular, the silicon carbide ring with emissivity close to that of a black body (1.0) can be read, so that temperature measurement errors caused by color change can not be generated when the back surface of the wafer is measured, and the accurate temperature can be measured.
Preferably, the quartz tube 3 is a quartz tube blocking long wavelengths of 5 μm or more.
Preferably, the inside of the quartz tube 3 is purged by continuously supplying nitrogen gas.
Preferably, the notch 2 is a window made of a sapphire material having excellent transmittance at a wavelength of 5 μm and is welded with the process chamber of the quartz tube 3 to form an integral structure.
Preferably, the notch 2 is made of a sapphire material with a diameter of 12mm and a thickness of 1mm, and is connected with the inner wall of the quartz tube 3 by welding, in this embodiment, in the case of the existence of IR in the quartz cavity, it is impossible to exist a long wavelength exceeding 4.9 micrometers, and the pyrometer can measure an accurate temperature by reading the infrared spectrum of a wafer with a wavelength of 5 um.
Preferably, the nitrogen flushing pipe 5 is required to be communicated with the notch 2, and the diameter of the nitrogen flushing pipe 5 is smaller than that of the notch 2.
Preferably, a sealing structure is required to be arranged at the joint of the nitrogen flushing pipeline 5 and the nitrogen conveyer, and in the embodiment of the sealing structure, the sealing structure is further improved at the joint of the nitrogen flushing pipeline 5 and the external nitrogen conveyer, and the sealing structure can be a sealing ring or other sealing structure materials.
Preferably, the notch 2 in this embodiment is in a cylindrical structure, and a sealing ring 801 is disposed at a connection between the inner wall of the notch 2 and the lens 8, and the sealing ring 801 is disposed at a connection between the inner wall of the notch 2 and the lens 8 in this embodiment, so as to further improve the tightness.
Preferably, the inside of the notch 2 and the nitrogen flushing pipe 5 form an L-shaped structure, and in this embodiment, the inside of the notch 2 and the nitrogen flushing pipe 5 are arranged into an L-shaped structure, so that connectivity is further ensured.
The embodiment also discloses a wafer induction pyrometer prepared by the method for improving the temperature measurement precision of the wafer by effectively cutting off the interference, which is characterized in that the wafer induction pyrometer 4 can more accurately measure the temperature of the wafer or the silicon carbide ring 1 as the measurement object under the condition of 100% interference removal.
The specific installation steps of the invention are as follows:
the silicon carbide ring with emissivity close to that of a black body (1.0) is read through the device, so that temperature measurement errors caused by color change can be avoided when the back surface of the wafer is measured, and the temperature detection precision is improved; in addition, in the detection process, in order to ensure the tiny error and measurement reproducibility of the measured value caused by the pollution of the pyrometer lens, the N2 Purger is continuously supplied, and meanwhile, the invention can also be used on a structure that a window made of a sapphire material with excellent transmittance at the wavelength of 5 mu m is welded with a quartz process cavity to form an integral structure, and can be effectively applied to processes of oxygen ppm importance such as metal annealing and the like.
The following table is a specification table of pyrometers used in the present invention
The wafer induction pyrometer (5 mu m) adopted by the invention is installed to be directly oriented to a measuring object, namely a wafer or a silicon carbide ring. In particular, it is possible to read a silicon carbide ring having an emissivity close to that of a black body (1.0), so that a temperature measurement error due to discoloration is not caused when measuring the back surface of a wafer, thereby measuring an accurate temperature, and at the same time, in order to 100% block interference (0.3 to 4.7 [ mu ] m) from a lamp, it is necessary to use a quartz tube blocking a long wavelength of 5 [ mu ] m or more, and in addition, in order to ensure a minute error of a measured value due to contamination of a pyrometer lens and measurement reproducibility, it is formulated to continuously supply a nitrogen purging operation, and in addition, it is also possible to use a window made of a sapphire material having an excellent transmittance at a wavelength of 5 [ mu ] m as a one-piece structure welded with a quartz process chamber, and it is effective in a process in which oxygen ppm such as metal annealing is important.
The wafer induction pyrometer designed according to the invention can more accurately measure the temperature of a wafer or silicon carbide ring as a measurement object with 100% interference removal.
The present invention is not limited to the above embodiments, but is capable of modification and variation in detail, and other modifications and variations can be made by those skilled in the art without departing from the scope of the present invention.
Claims (10)
1. A method for improving the temperature measurement accuracy of a wafer by effectively cutting off interference, comprising a wafer or a silicon carbide ring (1), characterized in that: the wafer or the silicon carbide ring (1) side be provided with breach (2) be provided with a quartz tube (3) and 5 mu m thick wafer response pyrometer (4) on breach (2) the wafer response pyrometer (4) install on the face of direct orientation wafer or silicon carbide ring (1), utilize wafer response pyrometer (4) direct reading emissivity to be close the carborundum ring of blackbody, so can not lead to temperature measurement error to measure accurate temperature because of discolouring when measuring the wafer back quartz tube (3) intussuseption is filled with nitrogen gas that is used for the purge air quartz tube (3) side be provided with nitrogen gas flushing pipeline (5) with quartz tube (3) intercommunication the outside interval of wafer or silicon carbide ring (1) be provided with lamp (6) more than one, all lamps (6) set up with breach (2) homonymy, and be provided with reflection of light face (7) in the below of all lamps (6) quartz tube (3) below is provided with lens (8).
2. The method for improving the temperature measurement accuracy of the wafer by effectively cutting off the interference according to claim 1, wherein the quartz tube (3) is a quartz tube for blocking long wavelengths of more than 5 mu m.
3. Method for improving the temperature measurement accuracy of wafers by effectively cutting off disturbances according to claim 1 or 2 where the quartz tube (3) is purged with a continuous supply of nitrogen.
4. Method for improving the temperature measurement accuracy of wafers by effectively cutting off disturbances according to claim 1 or 2 characterised in that the notch (2) is made of a window made of sapphire material with excellent transmittance at 5 μm wavelength and welded to the process chamber of the quartz tube (3) as a unitary structure.
5. The method for improving the temperature measurement accuracy of the wafer by effectively cutting off the interference according to claim 4, wherein the notch (2) is made of a sapphire material with the diameter of 12mm and the thickness of 1mm and is connected with the inner wall of the quartz tube (3) in a welding mode.
6. The method for improving the temperature measurement accuracy of the wafer by effectively cutting off the interference according to claim 4, wherein the nitrogen flushing pipeline (5) and the notch (2) are required to be communicated, and the diameter of the nitrogen flushing pipeline (5) is smaller than the diameter of the notch (2).
7. The method for improving the temperature measurement accuracy of the wafer by effectively cutting off the interference according to claim 6, wherein a sealing structure is required to be arranged at the joint of the nitrogen flushing pipeline (5) and the nitrogen conveyor.
8. The method for improving the temperature measurement accuracy of the wafer by effectively cutting off the interference according to claim 4, wherein the notch (2) is in a cylindrical structure, and a sealing ring (801) is arranged at the connection part between the inner wall of the notch (2) and the lens (8).
9. The method for improving the temperature measurement accuracy of the wafer by effectively cutting off the interference according to claim 6, wherein the inside of the notch (2) and the nitrogen flushing pipeline (5) form an L-shaped structure.
10. The wafer induction pyrometer prepared by the method for improving the temperature measurement precision of the wafer by effectively cutting off the interference is characterized in that the wafer induction pyrometer (4) can more accurately measure the temperature of the wafer or the silicon carbide ring (1) which is a measuring object under the condition that 100% of interference is removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310892216.2A CN116952383B (en) | 2023-07-20 | 2023-07-20 | Method for improving temperature measurement precision of wafer by effectively cutting off interference |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310892216.2A CN116952383B (en) | 2023-07-20 | 2023-07-20 | Method for improving temperature measurement precision of wafer by effectively cutting off interference |
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| Publication Number | Publication Date |
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| CN116952383A true CN116952383A (en) | 2023-10-27 |
| CN116952383B CN116952383B (en) | 2024-05-03 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118223132A (en) * | 2024-03-29 | 2024-06-21 | 扬州韩思半导体科技有限公司 | Quartz cavity with sapphire window and sapphire pasting method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19748041A1 (en) * | 1997-10-30 | 1998-12-17 | Wacker Siltronic Halbleitermat | Device for measuring and regulating temperature of semiconducting plate |
| CN103502783A (en) * | 2010-12-30 | 2014-01-08 | 维易科仪器公司 | Methods and systems for in-situ pyrometer calibration |
| CN203456424U (en) * | 2013-07-19 | 2014-02-26 | 上海华虹宏力半导体制造有限公司 | Temperature measuring device for rapid heat treatment equipment |
| CN104395998A (en) * | 2012-06-26 | 2015-03-04 | 威科仪器有限公司 | Temperature control for gan based materials |
-
2023
- 2023-07-20 CN CN202310892216.2A patent/CN116952383B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19748041A1 (en) * | 1997-10-30 | 1998-12-17 | Wacker Siltronic Halbleitermat | Device for measuring and regulating temperature of semiconducting plate |
| CN103502783A (en) * | 2010-12-30 | 2014-01-08 | 维易科仪器公司 | Methods and systems for in-situ pyrometer calibration |
| CN104395998A (en) * | 2012-06-26 | 2015-03-04 | 威科仪器有限公司 | Temperature control for gan based materials |
| CN203456424U (en) * | 2013-07-19 | 2014-02-26 | 上海华虹宏力半导体制造有限公司 | Temperature measuring device for rapid heat treatment equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118223132A (en) * | 2024-03-29 | 2024-06-21 | 扬州韩思半导体科技有限公司 | Quartz cavity with sapphire window and sapphire pasting method |
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| Publication number | Publication date |
|---|---|
| CN116952383B (en) | 2024-05-03 |
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