CN116949426A - Substrate processing device and chamber liner - Google Patents

Substrate processing device and chamber liner Download PDF

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Publication number
CN116949426A
CN116949426A CN202210410374.5A CN202210410374A CN116949426A CN 116949426 A CN116949426 A CN 116949426A CN 202210410374 A CN202210410374 A CN 202210410374A CN 116949426 A CN116949426 A CN 116949426A
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CN
China
Prior art keywords
liner
chamber
substrate
gas
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210410374.5A
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Chinese (zh)
Inventor
庞云玲
姜勇
丛海
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Advanced Micro Fabrication Equipment Inc Shanghai
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Advanced Micro Fabrication Equipment Inc Shanghai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Fabrication Equipment Inc Shanghai filed Critical Advanced Micro Fabrication Equipment Inc Shanghai
Priority to CN202210410374.5A priority Critical patent/CN116949426A/en
Priority to TW112112271A priority patent/TW202343634A/en
Publication of CN116949426A publication Critical patent/CN116949426A/en
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Abstract

The invention provides a substrate processing device and a chamber liner, which are used for processing a substrate. The substrate processing device comprises a chamber, the chamber comprises a chamber liner and a chamber shell, the chamber liner is arranged in a mutually nested mode, the chamber shell is located outside the chamber liner, the whole chamber liner is of a cuboid structure, the chamber liner comprises a liner upper wall and a chamber bottom wall, which are provided with an upper liner opening, and two parallel liner side walls located between the liner upper wall and the liner bottom wall, in the process, the chamber liner forms a square gas distribution space above a substrate, and the transverse width of the square gas distribution space is equal to the distance between the two parallel liner side walls and is larger than the diameter of the substrate. The process gas close to the side wall of the lining is transmitted downstream along the side wall of the lining, and transverse diffusion is not needed to realize laminar flow parts of the process gas, so that the processing uniformity of different radial areas of the substrate is improved.

Description

Substrate processing device and chamber liner
Technical Field
The invention relates to the technical field of semiconductor substrate processing equipment, in particular to a substrate epitaxy processing device and a chamber liner thereof.
Background
At present, the micro-processing of the semiconductor process piece or the substrate is carried out by adopting the process modes such as plasma etching, physical vapor deposition (Physical Vapor Deposition, PVD for short), chemical vapor deposition (Chemical Vapor Deposition, CVD for short) and the like. Micromachining fabrication involves a number of different processes and steps, of which a relatively wide range of chemical vapor deposition processes are employed, which can deposit a variety of materials, typically in high vacuum reaction chambers.
With the ever shrinking feature sizes of semiconductor devices and ever increasing device integration, ever increasing demands are placed on the uniformity of chemical vapor deposited films. Although the performance of the chemical vapor deposition device is greatly improved after multiple updating, the chemical vapor deposition device still has a plurality of defects in the aspect of film deposition uniformity, and particularly, as the size of a substrate is increasingly increased, the conventional vapor deposition method and equipment are difficult to meet the requirement of film uniformity.
In the thin film deposition process, various process conditions affect the uniformity of thin film deposition on the surface of the substrate, such as the direction and distribution of the flow of the reaction gas, the heating temperature field of the substrate, the pressure distribution in the reaction chamber, etc. If the process environment of the reaction area in the reaction chamber is not completely consistent, the film deposited on the surface of the substrate can generate adverse phenomena such as uneven thickness, uneven components, uneven physical characteristics and the like, thereby reducing the yield of the substrate production. Accordingly, improvements to existing chemical vapor deposition apparatus are needed to improve the uniformity of substrate film deposition. Furthermore, for epitaxial growth processes of silicon or silicon germanium materials, since these epitaxial materials are typically the bottom layers of semiconductor devices, the Critical Dimension (CD) is very small, typically only a few nanometers, and cannot withstand high temperatures for long periods of time, which would otherwise result in damage to the semiconductor device, it is necessary to heat the substrate to a temperature sufficient to perform epitaxial growth of the silicon material, such as 600 degrees to 1200 degrees, in a very short period of time. Because of this severe temperature rise requirement, silicon epitaxy processes typically use high power heating lamps to heat substrates located in a reaction chamber through a transparent reaction chamber formed of quartz. Because the pressure in the reaction chamber is far lower than the atmospheric pressure outside the quartz reaction chamber, in order to ensure that the reaction chamber structure is not deformed or broken due to the huge pressure difference between the inside and the outside of the chamber, a substrate processing device with stable air flow and strong pressure resistance is needed to be provided.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a substrate processing apparatus for performing vapor phase epitaxy process processing on a substrate, the processing apparatus comprising:
the chamber comprises a chamber liner and a chamber shell, wherein the chamber liner and the chamber shell are mutually nested, the chamber shell is positioned outside the chamber liner, the whole chamber liner is of a cuboid structure, and comprises a liner upper wall and a liner bottom wall which are provided with an upper liner opening, and two parallel liner side walls positioned between the liner upper wall and the liner bottom wall; the two opposite sides of the inner liner of the chamber are respectively provided with an air inlet end and an air outlet end for supplying process gas;
the upper cover is used for covering the upper lining opening and enclosing a processing space with the cavity;
the substrate bearing device is positioned in the processing space and arranged below the upper cover and is used for bearing the substrate in the process;
the substrate is provided with a square gas distribution space above, the square gas distribution space is provided with a longitudinal direction along the gas flow direction, a transverse direction which is coplanar with the gas flow direction and is perpendicular to the gas flow direction and a height direction which is perpendicular to the substrate, the height of the square gas distribution space is smaller than or equal to the distance between the plane of the substrate and the plane of the upper wall of the lining, and the transverse width of the square gas distribution space is equal to the distance between the two parallel side walls of the lining and is larger than the diameter of the substrate.
Optionally, the air inlet end includes a rectangular air inlet, the air outlet end includes a rectangular air outlet, and the transverse width of the rectangular air inlet is smaller than or equal to the distance between the two parallel inner liner side walls.
Optionally, the chamber liner includes a liner body, and the liner body is disposed from the air inlet end to the air outlet end in an integral structure.
Optionally, the liner bottom wall is provided with a lower liner opening, the chamber housing includes a housing upper wall and a housing bottom wall, and the housing upper wall and the housing bottom wall are respectively provided with an upper housing opening and a lower housing opening corresponding to the upper liner opening and the lower liner opening.
Optionally, the processing device includes a lower cover covering the lower liner opening and the lower outer shell opening.
Optionally, the chamber liner further includes an upper liner ring and a lower liner ring, where the upper liner ring is disposed between the periphery of the upper cover and the upper liner opening to avoid the chamber shell from contacting the processing space, and the lower liner ring is disposed between the periphery of the lower cover and the lower liner opening to avoid the chamber shell from contacting the processing space.
Optionally, during the process, the two parallel liner sidewalls of the liner body guide the process gas on two sides of the square gas distribution space to be transferred in a straight line.
Optionally, the upper cover includes a window area protruding in a direction away from the processing space and an outer edge area surrounding the window area.
Optionally, the lower cover includes a central region protruding away from the processing space, and the central region is provided with a receiving opening for receiving a driving mechanism for driving the substrate carrying device to lift and/or rotate.
Optionally, a gas flow guide is disposed inside the chamber liner adjacent the gas inlet end, the gas flow guide being configured to guide the process gas horizontally to the substrate surface.
Optionally, a preheating ring is disposed around the periphery of the substrate, and the air flow guiding portion is at least partially disposed around the periphery of the preheating ring.
Optionally, the air flow guiding portion includes an air flow guiding surface, and the air flow guiding surface and the upper surface of the substrate are located in the same plane.
Optionally, the gas flow guide divides the process space into a reaction space above the substrate and an operation space below the substrate.
Optionally, the front end of the cavity is connected with an air inlet flange, and a plurality of air inlet channels and rectangular air inlet grooves are arranged in the air inlet flange.
Optionally, the gas inlet flange further comprises a gas baffle dividing the rectangular gas inlet into a process gas inlet located above the gas baffle and an operation port located below the gas baffle.
Optionally, an airflow guiding part is disposed inside the chamber liner, and the airflow guiding part and the upper surface of the gas partition plate are located in the same plane.
Optionally, one of the two parallel side walls of the liner is provided with a liner sheet transferring port for transferring the substrate, and the position of the chamber shell corresponding to the liner sheet transferring port is provided with a shell sheet transferring port.
Optionally, the rectangular air outlet and the rectangular air inlet have the same or different shape and/or size.
Optionally, the chamber liner is made of quartz, and the chamber shell is made of metal.
Optionally, the inner surface of the chamber housing and the outer surface of the chamber liner are in contact with each other or are provided with a certain gap.
Optionally, the chamber shell is provided with a purge gas channel, and the purge gas enters between the chamber shell and the chamber liner through the purge gas channel for purging.
Optionally, the pressure in the process space is greater than or equal to the pressure of the purge gas between the chamber housing and the chamber liner.
Optionally, the processing apparatus comprises a heat exchange system comprising an air cooling system located outside the chamber and a fluid cooling system located inside the chamber enclosure.
Further, the invention also discloses a chamber liner for providing a processing space for substrate processing in a substrate processing device, the chamber liner comprises a liner main body with a square structure, wherein the liner main body comprises a liner upper wall and a liner bottom wall which are provided with an upper liner opening, and two parallel liner side walls connected with the liner upper wall and the liner bottom wall; the inside square space that includes of inside lining main part sets up a rectangle air inlet and a rectangle gas outlet in the both sides that the lining main part is relative, square space's transverse width equals distance between two parallel inside lining lateral walls just is greater than the diameter of substrate.
Optionally, the rectangular air outlet and the rectangular air inlet have the same or different shape and/or size.
Optionally, the liner body is integrally disposed from the rectangular air inlet to the rectangular air outlet.
Optionally, the chamber liner further comprises an upper liner ring, wherein an outer diameter of the upper liner ring matches an inner diameter of the upper liner opening.
Optionally, the chamber liner further comprises a lower liner ring having an outer diameter matching an inner diameter of the lower liner opening.
Optionally, an air flow guiding portion is disposed inside the chamber liner adjacent to the rectangular air inlet, and the air flow guiding portion has an air flow guiding surface parallel to the upper wall.
Optionally, the liner body is provided with a mounting edge at the periphery of the rectangular air inlet.
Optionally, the chamber liner is a quartz material.
The technical scheme of the invention has the advantages that: according to the invention, the chambers are arranged into the chamber lining and the chamber shell which are mutually nested, the metal chamber shell can effectively improve the mechanical strength of the chamber, the cuboid quartz chamber lining can provide a square gas distribution space above the substrate, the distance between the two parallel side walls of the chamber lining is larger than the diameter of the substrate, the transverse width of the square gas distribution space above the substrate is ensured to be larger than the diameter of the substrate, after the process gas enters the processing space, the process gas does not need to be transversely diffused, the whole coverage of the substrate can be realized along the entering airflow direction and downstream transmission, and the film growth uniformity of different radial areas of the substrate is improved. Because the substrate rotates according to a certain speed in the process, compared with the situation that the gas in the edge area of the cylindrical treatment space is easy to be greatly disturbed under the drive of the rotating substrate, the arrangement of the square gas distribution space can reduce the disturbance formed by the gas flow in the edge area when the substrate rotates.
In addition, the upper wall of the chamber liner and the upper wall of the chamber shell are provided with corresponding upper cover openings, the upper cover which allows heat radiation to penetrate is covered on the upper cover openings, the upper cover can be of a dome-shaped design with a certain arch height, the upper cover is carried by the metal chamber shell, the outer edge of the upper cover is fixed above the chamber shell through the clamping ring, the chamber shell and the clamping ring can effectively release transverse pressure born by the upper cover, so that the arch height of the upper cover is smaller, laminar gas distribution in a processing space is kept, and uniformity of substrate processing is guaranteed.
According to the invention, the lining main body structure integrally manufactured from the air inlet end to the air outlet end is adopted, so that the problem of particle pollution possibly caused when a plurality of parts are connected is avoided, and the metal chamber shell with higher mechanical strength is arranged outside the chamber lining, so that the thickness of the chamber lining is designed to be smaller, the reinforcing rib structure is prevented from being designed on the quartz chamber lining, and the processing difficulty and the manufacturing cost of the quartz chamber lining are reduced. The design of the upper lining ring and the lower lining ring isolates the metal chamber shell from the processing space, so that metal pollution is reduced; the purge gas is supplied between the chamber liner and the chamber shell, and the purge gas is prevented from entering the inside of the processing space by controlling the structural design of the inner and outer shells and the pressure of the purge gas in the processing space to be more than or equal to the pressure of the purge gas, so that the particulate matters in the processing space are reduced.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1A is an exploded view of a chamber liner of the present invention;
FIG. 1B is a schematic view of an assembly of a chamber liner according to the present invention;
FIG. 2 is a schematic view of the chamber housing;
FIG. 3 is a schematic view of an air intake device;
FIG. 4 is a schematic view of the structure of the upper cover;
FIG. 5 is a schematic view of the lower cover structure;
FIG. 6A is a schematic perspective view of a chamber assembly;
FIG. 6B is a top view of FIG. 6A;
fig. 7 is a schematic view in section along A-A of fig. 6B.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a processing apparatus for vapor phase epitaxial deposition of a substrate and a chamber liner that provides a processing space for substrate processing. The processing apparatus of the present invention comprises a chamber including a chamber liner 100 and a chamber housing 200 disposed in a nested arrangement outside the chamber liner, wherein the chamber liner 100 and the chamber housing 200 are respectively in a square structure, and when disassembled and assembled, the chamber liner can be separated from the chamber housing like a drawer, thereby facilitating the respective replacement and maintenance.
Fig. 1A and 1B show an exploded view and an assembled structure view of a chamber liner, and fig. 2 shows a structure view of a chamber housing, which will be described in detail below with reference to the accompanying drawings.
In the exploded view of the chamber liner shown in fig. 1A, the chamber liner 100 includes a liner body 110, an upper liner ring 130, and a lower liner ring 150. The liner body 110 has a rectangular parallelepiped structure, and includes an upper wall 101 and a bottom wall 102 parallel to each other, two parallel side walls 103 and 104 between the upper wall 101 and the bottom wall 102, and an air inlet end and an air outlet end. The air inlet end is provided with a rectangular air inlet 112 and a mounting edge 113 positioned at the periphery of the rectangular air inlet 112, the rectangular air inlet comprises a first edge 112a and a second edge 112b which are perpendicular to each other, the first edge 112a is parallel to the upper wall 101, the second edge 112b is perpendicular to the upper wall 101, the air outlet end is provided with a rectangular air outlet 114 which is identical to the rectangular air inlet in one embodiment, and in other embodiments, the air outlet arranged at the air outlet end can be other shapes or rectangular air outlets which are different from the rectangular air inlet in size and/or dimension. The arrangement is such that the interior of the rectangular chamber forms a generally cuboid-shaped processing space, which in other embodiments may be a square-shaped processing space.
Referring to FIG. 1B, in order to describe the process space more clearly, the present invention defines the direction along the air flow as the longitudinal direction of the process space, the process space has a longitudinal length L 1 The treatment space has a transverse width L and is perpendicular to the air flow direction in the same plane 2 And a height direction perpendicular to the upper wall, the processing space having a height H. During the process, a square gas distribution space is formed over the substrate, the square gas distribution space being a part of the process space, having the same longitudinal direction, transverse direction and height direction as the process space. The lateral width of the square gas distribution space is equal to the distance between the two parallel side walls 103 and 104 and is larger than the substrateIs smaller than H in diameter and L in longitudinal length 1 . The square-shaped gas distribution space in this embodiment is a rectangular-parallelepiped-shaped gas distribution space. The height of the square gas distribution space above the substrate is smaller than or equal to the distance between the plane of the substrate and the plane of the upper wall of the lining.
Fig. 2 shows a schematic view of the structure of the chamber housing, and as shown in fig. 2, the shape of the chamber housing 200 matches the shape of the chamber liner 100, and the chamber housing
According to the embodiment shown in fig. 1A and 1B, the air inlet end includes a rectangular air inlet, the rectangular air inlet has a first edge 112a arranged along the transverse direction of the processing space and a second edge 112B arranged along the height direction of the processing space, in this embodiment, in order to realize the process air transmission along the longitudinal direction, the transverse width of the rectangular air inlet 112 is equal to the distance between two parallel lining side walls, and the process air always maintains a cuboid airflow distribution on the surface of the substrate after entering the processing space through the rectangular air inlet. In other embodiments, the rectangular gas inlet may be located at a distance from the edge of the substrate, such that the transverse width and/or height of the rectangular gas inlet is slightly smaller than the transverse width and/or height of the processing space, and the process gas may diffuse through the rectangular gas inlet to a time before reaching the edge of the substrate, to achieve a stable cuboid-shaped gas flow distribution over the substrate. The air inlet width L of the treatment space 2 The diameter of the substrate is larger than that of the substrate, so that the process gas can form uniform laminar flow distribution in the square gas distribution space above the substrate, different radial positions of the substrate can be covered without diffusing along the width direction, and uneven air flow caused by diffusing along the transverse direction on the surface of the substrate after the process gas enters the processing space from the air inlet with smaller size in the prior art is avoided. Ensuring that the gas distribution in the central area and the edge area of the substrate is consistent.
As shown in fig. 1A, the upper wall 101 of the liner body 110 is provided with an upper liner opening 117, the bottom wall 102 is provided with a lower liner opening 119, the upper liner ring 130 is matched with the upper liner opening 117, and the lower liner ring 150 is matched with the lower liner opening 119. The liner body 110, the upper liner ring 130, and the lower liner ring 150 are assembled to form the chamber liner structure shown in FIG. 1B.
In the present invention, an airflow guiding portion 116 is disposed inside the chamber liner 100, and the airflow guiding portion 116 is a flat plate structure having a circular opening and four sides enclosing a rectangle, and includes an airflow guiding surface 116a parallel to the upper wall 101 and the bottom wall 102. The gas flow guide 116 extends from the rectangular gas inlet 112 to the gas outlet end, and an opening 116b is provided in the middle region for exposing the substrate located in the processing space. The gas flow guide 116 has both sides in contact with the sidewalls 103 and 104 of the liner body to achieve horizontal guiding of the gas. The air flow guide 116 divides the processing space into a reaction space above the air flow guide surface and the substrate, and an operation space below the substrate, to achieve processing of the substrate in different processing steps. In further embodiments, the area of the air flow guiding surface near the air inlet end has an air flow guiding surface coplanar with the substrate, and the area near the air outlet end may have an air flow guiding surface that is not coplanar.
The chamber liner 100 and the chamber housing 200 are telescopically arranged to form a chamber, and the chamber housing 200 also comprises a rectangular parallelepiped main structure including a housing upper wall 201 and a housing bottom wall 202 parallel to each other, the housing upper wall 201 being provided with an upper housing opening 217 corresponding to the upper liner opening 117, and the housing bottom wall 202 being provided with a lower housing opening 219 corresponding to the lower liner opening 119. The upper liner opening 117 and the upper shell opening 217 form an upper lid opening, and the lower liner opening 119 and the lower shell opening 219 form a lower lid opening, and in one embodiment, the upper lid opening and the lower lid opening are circular, and the upper lid opening and the lower lid opening correspond up and down, and may have the same or different diameters, and in one embodiment, the diameters of the upper lid opening and the lower lid opening are equal to or greater than the diameter of the substrate.
The chamber shell further comprises an air inlet end and an air outlet end, wherein the air inlet end and the air outlet end are respectively provided with a rectangular air inlet opening 212 and an air outlet opening 214 which are matched with the rectangular air inlet and the air outlet of the chamber liner, in addition, the periphery of the air inlet opening 212 of the chamber shell is provided with a circle of limiting groove 213, and when the chamber liner 100 is installed inside the chamber shell 200, the limiting groove 213 can accommodate the installation edge 113 of the chamber liner, so that the chamber liner 100 and the chamber shell 200 cannot slide with each other.
Because the substrate processing device can generate higher heat in the working process, a cooling system can be arranged in the chamber shell for realizing the temperature control of the chamber, and because the chamber shell is usually made of metal, a fluid medium channel can be conveniently processed in the chamber shell, and the rapid cooling of the chamber can be realized by controlling the flow rate and the type of fluid.
Fig. 3 shows a schematic structure of an air inlet device, the air inlet device comprises an air inlet flange 300, a plurality of air inlet channels 332 and rectangular air inlet grooves 310 are arranged in the air inlet flange, the air inlet channels 332 are arranged in one row or a plurality of rows above the rectangular air inlet grooves, the air inlet channels 332 are connected with an external process gas source, and the air inlet channels in different rows can convey the same process gas or different process gases. In this embodiment, the rectangular air inlet grooves 310 are arranged consecutively along the transverse direction of the processing space shown in fig. 1B, and in other embodiments, the inside of the rectangular air inlet grooves 310 may be arranged into a plurality of sections, so as to realize air flow adjustment on different radial areas of the substrate. The gas inlet flange 300 further includes a gas baffle 316 that divides the rectangular gas inlet slot 310 into a process gas inlet 312 above the gas baffle and an operation port 314 below the gas baffle, the operation port 314 being disposed below the gas baffle in this embodiment for transporting substrates. In other embodiments the substrate transfer port may also be located in a sidewall 103 or 104 of the chamber. The inlet flange 300 is disposed at the front end of the chamber formed by the chamber liner and the chamber housing, the rectangular inlet slot 310 is disposed corresponding to the rectangular inlet 112 of the chamber, in one embodiment, the upper surface of the gas baffle 316 is located in the same plane as the air flow guiding surface 116a of the air flow guiding portion 116 inside the chamber liner, as shown in fig. 3, the process gas inlet 312 is a rectangular opening consecutively disposed along the transverse direction, and the process gas in the inlet channel 332 impinges the gas baffle 316 at a certain flow rate and then spreads transversely in the process gas inlet 312, and then enters the reaction space through the rectangular inlet 112 of the chamber, and flows to the substrate surface through the guiding horizontal of the air flow guiding portion 116.
In other embodiments, the gas flow guides 116 and the gas baffle 316 may also be located in different planes, with the process gases being directed to the substrate surface through the non-coplanar gas flow guides to accommodate different reactor chamber configurations.
Fig. 4 shows a schematic structure of an upper cover 400, which includes a window area 410 allowing heat radiation to pass through and an outer edge area 420 surrounding the window area. An upper lid 400 is disposed over the chamber for covering the upper liner opening 117 and the upper outer shell opening 217. In one embodiment, the window region of the upper cover is a transparent quartz material, the outer edge region is also a quartz material, and the outer edge region can be a transparent or opaque quartz material. In the present invention, the window area 410 of the upper cover 400 has a dome-shaped structure, and the dome-shaped window area is arched to a certain height along the direction away from the processing space, and the dome design can make the upper cover bear a larger pressure difference, so that the upper cover is ensured not to break under the process condition of vacuumizing the processing space after being installed on the opening of the upper cover, and meanwhile, the dome-shaped upper cover can properly reduce the thickness of the upper cover and improve the heat radiation transmittance.
Fig. 5 shows a schematic view of a lower cover, the lower cover 500 comprising a central region 510 and a lower cover peripheral region 520 surrounding the central region. A receiving opening 525 is also provided at the central region 510 of the lower cover 500 for receiving a driving mechanism for supporting the substrate to be lifted. In the epitaxial growth processing apparatus, the central region of the lower cover 500 is also generally required to be transparent to heat radiation, so that the central region 510 is also a transparent quartz material in the present invention, and the outer edge region 520 of the lower cover may be a transparent or opaque quartz material. In the present invention, the window area 510 of the lower cover 500 is also a dome-shaped structure, and the dome-shaped window area is arched to a certain height along the direction away from the processing space, and the dome design can make the upper cover bear a larger pressure difference, so that the lower cover is not broken under the process condition of vacuumizing the processing space after being installed on the opening of the lower cover, and meanwhile, the dome-shaped lower cover can properly reduce the thickness of the lower cover and improve the heat radiation transmittance.
Fig. 6A shows a schematic perspective view of a chamber formed by assembling the chamber liner 100, the chamber housing 200, the air inlet flange 300, and the upper and lower covers 400 and 500 (not shown), fig. 6B shows a top view of the chamber assembled by the above components, and fig. 6A and 6B show that the main body of the semiconductor processing chamber has a rectangular parallelepiped structure, and a rectangular parallelepiped processing space is formed inside the chamber to realize laminar distribution of process gases. In the schematic diagram shown in fig. 6B, the dashed arrows represent the flow of the process gas, and it can be seen that in the processing apparatus of the present invention, the process gas can be horizontally transported along the square gas distribution space surrounded by the parallel liner sidewalls 103 and 104 and the plane where the chamber liner upper wall 101 and the substrate are located, so as to achieve an ideal laminar flow distribution environment. The chamber liner adopts the quartz liner main body which is integrally arranged from the air inlet end to the air outlet end, and the metal chamber shell 200 which is matched with the chamber liner 100 in shape is arranged on the outer surface of the chamber liner, so that the chamber shell made of metal can well bear the external atmospheric pressure, has high mechanical strength, and the chamber liner made of quartz can prevent the reaction of process gas and metal, generate unnecessary metal pollution and ensure the stable performance of the substrate process.
As shown in fig. 6B, the distance M between the gas inlet end of the chamber and the substrate edge preheating ring is smaller than the distance N between the gas outlet end of the chamber and the substrate edge preheating ring, so that the shape of the gas outlet at the gas outlet end has less influence on the gas distribution space forming a cuboid shape.
The substrate processing apparatus of the present invention is mainly used for performing an epitaxial vapor deposition process on a substrate, such as epitaxial growth of silicon or silicon germanium materials on the surface of the substrate, and since these epitaxial materials are usually the bottom layers of semiconductor devices, the Critical Dimension (CD) is extremely small, usually only a few nanometers, and cannot withstand long-term high temperatures, which would otherwise cause damage to the semiconductor devices, it is necessary to heat the substrate to a temperature sufficient for epitaxial growth of silicon or germanium materials in an extremely short time. For this type of process, the industry now commonly uses infrared radiation heating to expose a substrate in a vacuum environment to a source of infrared radiation through a transparent chamber housing. Quartz is a chamber housing material which satisfies light transmittance and is suitable for large-scale industrial production, and has the advantages of high temperature resistance and strong light transmittance, however, because the processing space in the chamber is close to a vacuum environment, the pressure difference between the inside and the outside of the chamber is overlarge, in order to ensure the mechanical strength of the outer wall of the quartz, the outer wall of the quartz needs to be provided with a larger thickness or a reinforcing rib structure, and the larger thickness or the reinforcing rib structure is additionally provided to influence the light transmittance of the quartz, so that the problems of low heat radiation transmittance or uneven heat radiation transmittance occur.
The invention discloses a structure arrangement of a rectangular chamber and a dome-shaped upper cover and a dome-shaped lower cover, wherein the rectangular chamber with an inner layer and an outer layer is provided with a processing space which is approximately cuboid, a square gas distribution space with a certain height is formed above a substrate by arranging two parallel side walls 103 and 104 of a chamber lining main body, the transverse width of the square gas distribution space is larger than the diameter of the substrate, so that laminar flow distribution process gas is provided on the surface of the substrate, transverse diffusion of two side areas is avoided when the process gas flows above the substrate, and the film growth uniformity of different radial areas of the substrate is improved. Because the substrate rotates according to a certain speed in the process, the arrangement of the square gas distribution space can reduce disturbance formed by the gas flow in the edge area when the substrate rotates, and compared with the situation that the gas in the edge area of the cylindrical treatment space is easy to greatly disturb under the drive of the rotating substrate, the technical scheme of the invention can further improve the stability of the gas flow and ensure the uniformity of the film growth in different areas of the substrate. The arched upper cover with a certain height can effectively reduce the thickness of the upper cover and improve the transmittance of infrared radiation. Meanwhile, the arched upper cover 400 is arranged above the chamber, and is fixed with the chamber shell 200 through the outer edge area 420 of the upper cover, so that the pressure bearing effect of the upper cover is good, and the arched height of the upper cover can be reduced.
FIG. 7 is a schematic cross-sectional view taken along the direction A-A of FIG. 6B, and the operation of the present invention will be described in detail with reference to the reaction chamber structure shown in FIG. 7.
In the schematic view shown in fig. 7, the upper lid opening of the chamber is covered by an upper lid 400, and an upper liner ring 130 is disposed between the outer rim region 420 of the upper lid and the upper lid opening; the chamber lower cover opening is covered by the lower cover 500, a lower inner liner ring 150 is arranged between the lower cover outer edge region 520 and the lower cover opening, and the upper inner liner ring 130 and the lower inner liner ring 150 are made of quartz and are used for isolating the metal chamber housing 200 from the processing space so as to prevent the metal chamber housing from reacting with the process gas and generating metal pollution. In the invention, the upper cover outer edge region 420 is fixedly connected with the upper wall of the chamber shell 200 through an upper clamping ring 242, the lower cover outer edge region 520 is fixedly connected with the bottom wall of the chamber shell 200 through a lower clamping ring 252, and the upper clamping ring and the lower clamping ring can release part of transverse pressure of the upper cover and the lower cover, so that the upper cover and the lower cover are not broken when bearing higher internal and external pressure difference. Meanwhile, in order to ensure that the pressure in the processing space is controllable, when the upper cover and the lower cover are installed with the cavity, the installed contact surface can be provided with a sealing ring structure according to the requirement, and the details are not repeated here.
The processing space enclosed inside the chamber liner 100 is divided into an upper reaction space 162 and a lower operation space 164 by the air flow guiding part 116, a substrate carrying device 620 is disposed in the processing space of the chamber, a driving mechanism 610 is disposed below the substrate carrying device 620, and the driving mechanism 610 can drive the substrate carrying device 620 to move up and down or rotate, so as to realize the switching between the process position of the substrate W in the reaction space and the loading and unloading position of the operation space. At least a part of the area of the driving mechanism 610 is located in the accommodating opening 525 of the lower cover, and a preheating ring 630 is arranged at the edge area of the substrate carrying device, so that the preheating ring 630 can heat the flowing process gas in advance, and the process gas reaches the temperature required by the process when reaching the edge area of the substrate, and the epitaxial process is directly performed on the surface of the substrate.
Before the process begins, the substrate carrier 620 is lowered to the process space 164, the substrate is introduced from the port 314 and then placed over the substrate carrier, and the drive mechanism 610 drives the substrate carrier and substrate up to the process position, which is shown in the figure. In the process position, the upper surface of the substrate is positioned within the reaction space 162, and the upper heating element 710 and the lower heating element 720 of the chamber are operated to release infrared radiation to heat the substrate and its peripheral preheat ring 630 through the window region 410 of the upper cover and the central region 510 of the lower cover. Meanwhile, the process gas enters the gas inlet flange 300 through the gas inlet channel 332, the gas inlet channel 332 of the gas inlet flange is perpendicular to the process gas inlet 312, the process gas flows from the outlet of the gas inlet channel 332 to the process gas inlet 312 at a certain flow rate, the gas flow is adjusted from the vertical direction to the horizontal direction under the blocking of the gas baffle 316, and the diffusion mixing of the gas is realized in the adjustment process. The gas baffle 316 and the gas flow guiding part 116 in the chamber liner have the same height and are coplanar with the upper surface of the substrate, the gas flow guiding part 116 guides the process gas to be horizontally transported in the processing space, the process gas can start to perform epitaxial process when being preheated by the preheating ring 630 and reaches the substrate area, and the driving mechanism 610 drives the substrate bearing device to rotate so as to realize uniform epitaxial growth on the substrates in different areas. The process gas after the reaction is flowed out of the process space through the rectangular gas outlet 114.
In this embodiment, the air flow guiding portion 116 extends horizontally from the rectangular air inlet 112 to the rectangular air outlet 114, and in other embodiments, the air flow guiding portion 116 near the rectangular air outlet 114 and the air flow guiding portion 116 near the rectangular air inlet 112 are located in different planes to adapt to different reaction chamber designs.
In the above embodiment, the heating assemblies are disposed above the upper cover 400 and below the lower cover 500, respectively, at this time, the window area 410 of the upper cover and the central area of the lower cover are made of transparent quartz materials, and in other embodiments, the transparent lower cover may not be disposed, and only the substrate W is irradiated by the infrared radiation transmitted by the upper cover 400 to generate a deposition reaction.
In the above embodiment, the substrate transfer port is disposed below the gas partition of the gas inlet flange, in other embodiments, the substrate transfer port may also be disposed on a sidewall of the chamber, such as sidewall 103 or sidewall 104 in fig. 1A, where the substrate transfer port includes a liner transfer port disposed on the liner sidewall and a shell transfer port disposed on the shell of the chamber. The port 314 may be used to deliver dopant gases or gases required by other processes.
The processing device provided by the invention can form a square gas distribution space with the transverse width larger than the diameter of the substrate above the substrate, can effectively avoid the transverse diffusion of process gas, ensures uniform and stable gas flow passing through the central area and the edge area of the substrate, and further performs uniform vapor deposition on the central area and the edge area of the surface of the substrate; the lining main body structure which is integrally manufactured is adopted, so that the problem of particle pollution possibly caused when a plurality of parts are connected is avoided. The metal chamber shell is arranged outside the chamber liner, so that the compression resistance of the chamber can be effectively improved, the upper cover and the lower cover which penetrate through heat radiation are fixed on the metal shell, the pressure born by the upper cover and the lower cover can be effectively released, the arch heights of the upper cover and the lower cover are smaller, laminar gas distribution in a processing space is maintained, and the uniformity of substrate processing is ensured. The design of the upper lining ring and the lower lining ring isolates the metal chamber shell from the processing space, so that metal pollution is reduced.
According to the cavity structure provided by the invention, the outer surface of the cavity lining and the inner surface of the cavity shell can be contacted, and a certain gap can also be arranged. However, with or without contact, gas diffusion is achieved between the chamber liner and the chamber shell, both being of a rigid material. The invention sets the purge gas channel inlet 232 and the purge gas channel outlet 234 on the chamber shell, the purge gas enters between the outer surface of the chamber liner and the inner surface of the chamber shell through the purge gas channel inlet 232, and the cleaning of the particle pollutant between the outer surface of the chamber liner and the inner surface of the chamber shell can be realized by controlling the pressure of the purge gas. In one embodiment, by controlling the pressure within the processing volume to be greater than the pressure of the purge gas between the outer surface of the chamber liner and the inner surface of the chamber housing, the purge gas is effectively prevented from entering the processing volume, reducing contamination of the substrate by particulate contaminants. Compared with the scheme that the purge gas is required to be introduced into the operation space, the method can greatly reduce pollution of particle pollutants to the substrate in the treatment process and after the treatment is finished.
In the substrate processing apparatus of fig. 7, a heat exchange system is further included, which includes a cooling gas system and a fluid cooling system within the metal enclosure, which cooperate to provide temperature control of the substrate processing apparatus.
The semiconductor processing chamber disclosed by the invention is not only suitable for executing a chemical vapor deposition process, but also suitable for other semiconductor processing processes with strict requirements on air flow distribution, and is not repeated here.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.

Claims (32)

1. A substrate processing apparatus for performing vapor phase epitaxy processing on a substrate, comprising:
the chamber comprises a chamber liner and a chamber shell, wherein the chamber liner and the chamber shell are arranged in a mutually telescopic manner, the chamber liner is integrally in a square structure and comprises a liner upper wall and a liner bottom wall, wherein the liner upper wall is provided with an upper liner opening, and two liner side walls are arranged between the liner upper wall and the liner bottom wall and are parallel to each other; the two opposite sides of the inner liner of the chamber are respectively provided with an air inlet end and an air outlet end for supplying process gas;
The upper cover is used for covering the upper lining opening and enclosing a processing space with the cavity;
the substrate bearing device is positioned in the processing space and arranged below the upper cover and is used for bearing the substrate in the process;
the substrate is formed with a square gas distribution space above, the square gas distribution space has a longitudinal direction along the gas flow direction, a transverse direction coplanar with the gas flow direction and perpendicular to the gas flow direction, and a height direction perpendicular to the substrate, and the transverse width of the square gas distribution space is equal to the distance between the two parallel liner side walls and is larger than the diameter of the substrate.
2. The processing apparatus of claim 1, wherein the inlet end comprises a rectangular inlet port and the outlet end comprises a rectangular outlet port, the rectangular inlet port having a lateral width that is less than or equal to the distance between the two parallel liner sidewalls.
3. The processing apparatus of claim 1, wherein the chamber liner comprises a liner body disposed in a unitary structure from the inlet end to the outlet end.
4. The processing apparatus of claim 1 wherein the liner bottom wall defines a lower liner opening, the chamber housing including a housing upper wall and a housing bottom wall, the housing upper wall and housing bottom wall defining upper and lower housing openings corresponding to the upper and lower liner openings, respectively.
5. The processing apparatus of claim 4, wherein the processing apparatus comprises a lower cover covering the lower liner opening and lower shell opening.
6. The processing apparatus of claim 4, wherein the chamber liner further comprises an upper liner ring disposed between the periphery of the upper lid and the upper liner opening for preventing the chamber housing from contacting the processing space and a lower liner ring disposed between the periphery of the lower lid and the lower liner opening for preventing the chamber housing from contacting the processing space.
7. The processing apparatus of claim 1, wherein during processing, two parallel liner sidewalls of the liner body direct the linear transfer of process gas on both sides of the square gas distribution space.
8. The processing apparatus of claim 1, wherein the upper cover includes a window region protruding in a direction away from the processing space and an outer edge region surrounding the window region.
9. The processing apparatus according to claim 5, wherein the lower cover comprises a central region protruding away from the processing space, the central region being provided with a receiving opening for receiving a driving mechanism for driving the substrate carrier up and down and/or in rotation.
10. The processing apparatus of claim 1 wherein an interior of said chamber liner is provided adjacent said gas inlet end with a gas flow guide for directing process gas horizontally to said substrate surface.
11. The processing apparatus of claim 10 wherein a preheat ring is disposed around the periphery of the substrate, the air flow guide being at least partially disposed around the periphery of the preheat ring.
12. The processing apparatus according to claim 10, wherein the air flow guide portion includes an air flow guide surface that is located in the same plane as the upper surface of the substrate.
13. The processing apparatus of claim 10, wherein the gas flow guide divides the processing space into a reaction space above the substrate and an operation space below the substrate.
14. The processing apparatus of claim 10, wherein the front end of the chamber is connected to an intake flange, and wherein a plurality of intake passages and rectangular intake slots are provided in the intake flange.
15. The processing apparatus of claim 14 wherein the gas inlet flange further comprises a gas baffle dividing the rectangular gas inlet slot into a process gas inlet port located above the gas baffle and an operating port located below the gas baffle.
16. The processing apparatus of claim 15 wherein an air flow guide is disposed within the chamber liner, the air flow guide being in the same plane as an upper surface of the gas barrier.
17. The processing apparatus of claim 1 wherein one of said two parallel liner sidewalls is provided with a liner transfer port for substrate transfer and wherein said chamber housing is provided with a housing transfer port corresponding to the position of said liner transfer port.
18. The treatment device of claim 2, wherein the rectangular air outlet and the rectangular air inlet have the same or different shape and/or size.
19. The processing apparatus of claim 1 wherein the chamber liner is quartz and the chamber housing is metal.
20. The processing apparatus of claim 1, wherein an inner surface of the chamber housing and an outer surface of the chamber liner are in contact with each other or are provided with a gap.
21. The processing apparatus of claim 20, wherein the chamber housing is provided with a purge gas passage through which purge gas enters between the chamber housing and the chamber liner for purging.
22. The processing apparatus of claim 21, wherein a pressure within the processing volume during processing is greater than or equal to a pressure of a purge gas between the chamber enclosure and the chamber liner.
23. The processing apparatus of claim 1, wherein the processing apparatus comprises a heat exchange system comprising an air cooling system located outside the chamber and a fluid cooling system located inside the chamber enclosure.
24. The processing apparatus of claim 1 wherein the height of the square gas distribution space is less than or equal to the distance between the plane of the substrate and the plane of the liner upper wall.
25. A chamber liner for providing a processing space for substrate processing in a substrate processing device is characterized by comprising a liner main body with a square structure, wherein the liner main body comprises a liner upper wall and a liner bottom wall which are provided with an upper liner opening, and two parallel liner side walls connected with the liner upper wall and the liner bottom wall; the inside square space that includes of inside lining main part sets up a rectangle air inlet and a rectangle gas outlet in the both sides that the lining main part is relative, square space's transverse width equals distance between two parallel inside lining lateral walls just is greater than the diameter of substrate.
26. The chamber liner of claim 25, wherein the rectangular air outlet and the rectangular air inlet have the same or different shape and/or size.
27. The chamber liner of claim 25, wherein the liner body is integrally disposed from the rectangular inlet port to the rectangular outlet port.
28. The chamber liner of claim 25, further comprising an upper liner ring having an outer diameter matching an inner diameter of the upper liner opening.
29. The chamber liner of claim 25, further comprising a lower liner ring having an outer diameter matching an inner diameter of the lower liner opening.
30. The chamber liner of claim 25, wherein an air flow guide is provided in the interior of the chamber liner adjacent the rectangular air inlet, the air flow guide having an air flow guide surface parallel to the upper wall.
31. The chamber liner of claim 25, wherein the liner body is provided with a mounting rim at the periphery of the rectangular inlet opening.
32. The chamber liner of any one of claims 25 to 31, wherein the chamber liner is a quartz material.
CN202210410374.5A 2022-04-19 2022-04-19 Substrate processing device and chamber liner Pending CN116949426A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202210410374.5A CN116949426A (en) 2022-04-19 2022-04-19 Substrate processing device and chamber liner
TW112112271A TW202343634A (en) 2022-04-19 2023-03-30 Substrate processing device and chamber lining to allow the process gas close to the lining side wall to be transmitted downstream along the lining side wall, and the laminar flow of the process gas can be achieved without needing lateral diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210410374.5A CN116949426A (en) 2022-04-19 2022-04-19 Substrate processing device and chamber liner

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CN116949426A true CN116949426A (en) 2023-10-27

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