CN116937946A - High-side power supply circuit and power supply method for half-bridge gallium nitride gate driver - Google Patents

High-side power supply circuit and power supply method for half-bridge gallium nitride gate driver Download PDF

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Publication number
CN116937946A
CN116937946A CN202310506138.8A CN202310506138A CN116937946A CN 116937946 A CN116937946 A CN 116937946A CN 202310506138 A CN202310506138 A CN 202310506138A CN 116937946 A CN116937946 A CN 116937946A
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China
Prior art keywords
circuit
voltage
power supply
bootstrap
mos tube
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Pending
Application number
CN202310506138.8A
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Chinese (zh)
Inventor
胡一凡
王勇
王瑛
彭领
孔瀛
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Beijing Microelectronic Technology Institute
Mxtronics Corp
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Beijing Microelectronic Technology Institute
Mxtronics Corp
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Priority to CN202310506138.8A priority Critical patent/CN116937946A/en
Publication of CN116937946A publication Critical patent/CN116937946A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The application belongs to the field of integrated circuits, in particular relates to a high-side power supply circuit and a power supply method for a half-bridge gallium nitride gate driver, and aims to solve the problem of insufficient stability of the existing power supply circuit. The application comprises the following steps: the bootstrap clamp voltage stabilizing circuit and the HS negative bias voltage capability lifting circuit are sequentially connected; the bootstrap clamp voltage stabilizing circuit includes: low voltage level shift circuit, drive circuit, switch PMOS tube, high voltage bootstrap diode D BST1 And a linear voltage regulator; the HS-SCE includes: bootstrap capacitor C BST The three-channel integrated bootstrap sub-circuit, the high-voltage level shift circuit, the RS trigger and the high-side output driving circuit. The application enables a high-side power supplyThe voltage difference between HB and high side ground HS is kept to be 5V, so that the clamping protection of the grid electrode of the GaN device is realized, the power supply of the level shift circuit is prevented from being reduced along with the change of HS through the three-channel integrated circuit, and the HS negative bias resistance of the level shift circuit is improved.

Description

High-side power supply circuit and power supply method for half-bridge gallium nitride gate driver
Technical Field
The application belongs to the field of integrated circuits, and particularly relates to a high-side power supply circuit and a power supply method for a half-bridge gallium nitride gate driver.
Background
The GaN power device has the performance advantages of high frequency and high efficiency, and can meet the application scenes of high frequency, high voltage and high power, so that the GaN power device can gradually replace a silicon-based power device to become a main power device of a power integrated circuit. The various advantages of GaN devices have prompted the development of high frequency high efficiency high performance GaN driver chips.
The high-side power supply circuit is a circuit module for providing power supply voltage for the high-side channel in the enhanced GaN driving chip, and the performance of the high-side power supply circuit has important influence on the power consumption and the reliability of the whole chip. The stability and the safety of the GaN driving chip require that the high-side power supply circuit has high reliability, and the module requires that the high-side power supply circuit promotes the HS negative bias resistance of a propagation signal under the condition of meeting the low-gate-source breakdown voltage characteristic of the GaN device in consideration of the low-gate-source breakdown voltage characteristic and the reverse conduction characteristic of the GaN device so as to ensure that the circuit can have high-reliability switching loss caused by the charge and discharge of a working capacitor and reverse conduction loss caused by reverse conduction, thereby becoming a key technology for promoting the overall efficiency.
Disclosure of Invention
In order to solve the above-mentioned problems in the prior art, that is, the power supply circuit of the half-bridge gallium nitride gate driver in the prior art is susceptible to high-side ground noise, so that the high-voltage level shift circuit transmits an error signal or the device is broken down and damaged and has insufficient stability, the present application provides a high-side power supply circuit for the half-bridge gallium nitride gate driver, which comprises:
the bootstrap clamp voltage stabilizing circuit and the HS negative bias voltage capability lifting circuit are sequentially connected;
the bootstrap clamp voltage stabilizing circuit includes: low voltage level shift circuit, drive circuit, switch PMOS tube, high voltage bootstrap diode D BST1 And a linear voltage regulator;
the HS-negative bias power boost circuit includes: bootstrap capacitor C BST The three-channel integrated bootstrap sub-circuit, the high-voltage level shift circuit, the RS trigger and the high-side output driving circuit;
the bootstrap clamp voltage stabilizing circuit is connected with the high-voltage bootstrap diode D through the high-voltage bootstrap diode D BST1 Simultaneously connected to the bootstrap capacitor C BST And a first end of the linear voltage regulator;
the second end of the linear voltage stabilizer is connected with the three-channel integrated bootstrap sub-circuit of the HS-negative bias voltage capability lifting circuit.
In some preferred embodiments, the bootstrap clamp voltage stabilizing circuit specifically includes:
the low-voltage level displacement circuit comprises a first input end, a second input end and an output end of the low-voltage level displacement circuit, wherein the first input end is used for receiving a low-side input signal, the second input end is used for receiving a fault protection signal, and the output end of the low-voltage level displacement circuit is connected with the input end of the driving circuit;
the output end of the driving circuit is connected with the grid electrode of the switch PMOS tube;
a source electrode of the switch PMOS tube is connected with a low-voltage power supply, and a drain electrode of the switch PMOS tube is connected with the high-voltage bootstrap diode D BST1 Is provided;
high-voltage bootstrap diode D BST１ The output end of (a) is connected to a first common node which is respectively connected with the linear voltage stabilizer and the bootstrap capacitor C BST Is provided.
In some preferred embodiments, the HS negative bias capability promotion circuit specifically includes:
the three-channel integrated bootstrap sub-circuit comprises a high-voltage diode D BST2 A transistor Q1 and a second capacitor; the input end of the high-voltage diode is connected with a second power supply VS, and the high-voltage diode D BST2 The output end of the transistor Q1 is connected with a first common node which is connected with the first end of the high-voltage level displacement circuit; the collector and the base of the triode Q1 are connected with the second end of the linear voltage stabilizer;
the first end of the high-voltage level displacement circuit is connected with the second common node, the first output end of the high-voltage level displacement circuit is connected with the first end of the RS trigger, and the second output end of the high-voltage level displacement circuit is connected with the high-side ground;
the second end of the RS trigger is connected with the second end of the linear voltage stabilizer, the third end of the RS trigger is connected with the first end of the high-side output driving circuit, and the fourth end of the RS trigger is connected with the high-side ground;
the second end of the high-side output driving circuit is connected with the second end of the linear voltage stabilizer, and the grid electrode of the NMOS tube in the GaN power device outside the third end of the high-side output driving circuit;
the first end of the second capacitor is connected with the second end of the linear voltage stabilizer, and the second end of the second capacitor is connected with the high-side ground.
In some preferred embodiments, the transistor Q1 is implemented using bipolar transistors.
In some preferred embodiments, the high voltage level shift circuit specifically includes:
the first MOS tube MP1, the second MOS tube MP2, the third MOS tube MP3, the fourth MOS tube MP4, the fifth MOS tube MP5 and the sixth MOS tube MP6;
the source electrode of the first MOS tube MP1, the source electrode of the second MOS tube MP2, the source electrode of the fifth MOS tube MP5 and the source electrode of the sixth MOS tube MP6 are connected with the emitter electrode of the triode Q1, the grid electrode of the first MOS tube MP1 is simultaneously interconnected with the drain electrode of the second MOS tube MP2, the source electrode of the fourth MOS tube MP4 and the grid electrode of the sixth MOS tube MP6, the drain electrode of the first MOS tube MP1 is simultaneously interconnected with the source electrode of the third MOS tube MP3, the grid electrode of the second MOS tube MP2 and the grid electrode of the fifth MOS tube MP5, and the grid electrode of the third MOS tube MP3 and the grid electrode of the fourth MOS tube MP4 are connected with the high side ground.
In another aspect of the present application, there is provided a high-side power supply method for a half-bridge type gallium nitride gate driver, the method being implemented based on the above-described high-side power supply circuit for a half-bridge type gallium nitride gate driver, the method comprising:
the control end sends out a low-voltage control signal;
the low-voltage level shift circuit converts the low-voltage initial control signal into a drive control signal of 0-VIN potential;
the drive control signal is applied to the grid electrode of the switch PMOS tube through the drive circuit, and the PMOS tube is turned on or turned off according to the potential control signal;
when the switch PMOS tube is conducted, the power supply VIN passes through the high-voltage bootstrap diode D BST1 To bootstrap capacitor C BST Charging;
when the switch PMOS tube is turned off, the charged bootstrap capacitor C BST Supplying power to the linear voltage stabilizer;
the linear voltage regulator generates a voltage-stabilizing output to the second capacitor C HB Charging;
charged second capacitor C HB Providing a first high-side power supply HB to the RS flip-flop and the high-side output driving circuit;
the second power supply VS passes through the high-voltage diode D BST2 Providing a second high-voltage side power supply VB to the high-voltage level shift circuit; the triode Q1 is used for realizing unidirectional conduction from the first high-voltage side power supply HB to the second high-voltage side power supply VB;
turning the first-stage high-voltage side circuit of the high-voltage level shift circuit to a threshold value V th The voltage minimum value associated with the level shift output is associated with only the second high-side power supply VB;
the power supply voltage of the half-bridge gallium nitride gate driver is obtained and output through the RS trigger and the high-side output driving circuit.
The application has the beneficial effects that:
(1) According to the application, through the voltage stabilizing function of the linear voltage stabilizer, the voltage difference between the high-side power supply HB and the high-side ground HS is kept at a constant 5V, so that the clamping protection of the high-side GaN device is realized.
(2) According to the application, the three-channel integrated bootstrap technology is used for supplying power, so that the power supply of the level shift circuit is prevented from falling along with the change of HS, and the node A, B after the level shift is only connected with the PMOS device of the next stage, so that the overturning threshold value of the node A, B is uniquely related to the power supply of the high-voltage side, and the HS negative bias resistance of the level shift circuit is improved.
(3) The high-side power supply circuit applied to the GaN driving chip provided by the application realizes the low-power consumption high-reliability high-side output stage clamping function by utilizing the bootstrap clamping voltage stabilizing circuit, and the HS negative bias voltage lifting circuit greatly enhances the HS negative bias voltage capability of the driving chip, so that the problem of compromise between the power consumption and the reliability of the high-side power supply circuit of the traditional GaN driving chip is solved
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the accompanying drawings in which:
fig. 1 is a circuit diagram of a high-side power supply circuit for a half-bridge gallium nitride gate driver in an embodiment of the application;
FIG. 2 is a circuit diagram of a level shift circuit in an embodiment of the application;
fig. 3 is a voltage variation diagram in an embodiment of the application.
Detailed Description
The application is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the application and are not limiting of the application. It should be noted that, for convenience of description, only the portions related to the present application are shown in the drawings.
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The application will be described in detail below with reference to the drawings in connection with embodiments.
In order to more clearly describe the high-side power supply circuit for the half-bridge gan gate driver according to the present application, the following details of the components and circuit configuration of the embodiment of the present application are described in conjunction with fig. 1.
The high-side power supply circuit for the half-bridge gallium nitride gate driver comprises a bootstrap clamp voltage stabilizing circuit and an HS negative bias voltage capability lifting circuit which are sequentially connected;
the bootstrap clamp voltage stabilizing circuit includes: low voltage level shift circuit, drive circuit, switch PMOS tube, high voltage bootstrap diode D BST1 And a linear voltage regulator;
the bootstrap clamp voltage stabilizing circuit includes: low voltage level shift circuit, drive circuit, switch PMOS tube, high voltage bootstrap diode D BST1 And a linear voltage regulator; the method specifically comprises the following steps: the method specifically comprises the following steps:
in this embodiment, the low-voltage level shift circuit includes a first input end and a second input end, and a low-voltage level shift circuit output end, where the first input end is used to receive a low-side input signal, the second input end is used to receive a fault protection signal, and the output end of the low-voltage level shift circuit is connected to the input end of the driving circuit;
the output end of the driving circuit is connected with the grid electrode of the switch PMOS tube;
a source electrode of the switch PMOS tube is connected with a low-voltage power supply, and a drain electrode of the switch PMOS tube is connected with the high-voltage bootstrap diode D BST1 Is provided; the low-voltage power supply provides the voltage of VIN;
high-voltage bootstrap diode D BST1 The output end of (a) is connected to a first common node which is respectively connected with the linear voltage stabilizer and the bootstrap capacitor C BST Is provided.
The HS-negative bias power boost circuit includes: bootstrap capacitor C BST The three-channel integrated bootstrap sub-circuit, the high-voltage level shift circuit, the RS trigger and the high-side output driving circuit;
the bootstrap clamp voltage stabilizing circuit is connected with the high-voltage bootstrap diode D through the high-voltage bootstrap diode D BST1 Simultaneously connected to the bootstrap capacitor C BST And a first end of the linear voltage regulator;
the second end of the linear voltage stabilizer is connected with the three-channel integrated bootstrap sub-circuit of the HS-negative bias voltage capability lifting circuit.
In this embodiment, the HS negative bias capability promotion circuit specifically includes:
the three-channel integrated bootstrap sub-circuit comprises a high-voltage diode D BST2 A transistor Q1 and a second capacitor; the input end of the high-voltage diode is connected with a second power supply VS, and the high-voltage diode D BST2 The output end of the transistor Q1 is connected with a first common node which is connected with the first end of the high-voltage level displacement circuit; the collector and the base of the triode Q1 are connected with the second end of the linear voltage stabilizer; the transistor Q1 in this embodiment is implemented by a bipolar transistor.
The first end of the high-voltage level displacement circuit is connected with the second common node, the first output end of the high-voltage level displacement circuit is connected with the first end of the RS trigger, and the second output end of the high-voltage level displacement circuit is connected with the high-side ground;
in this embodiment, as shown in fig. 2, the high voltage level shift circuit specifically includes:
the first MOS tube MP1, the second MOS tube MP2, the third MOS tube MP3, the fourth MOS tube MP4, the fifth MOS tube MP5 and the sixth MOS tube MP6;
the source electrode of the first MOS tube MP1, the source electrode of the second MOS tube MP2, the source electrode of the fifth MOS tube MP5 and the source electrode of the sixth MOS tube MP6 are connected with the emitter electrode of the triode Q1, the grid electrode of the first MOS tube MP1 is simultaneously interconnected with the drain electrode of the second MOS tube MP2, the source electrode of the fourth MOS tube MP4 and the grid electrode of the sixth MOS tube MP6, the drain electrode of the first MOS tube MP1 is simultaneously interconnected with the source electrode of the third MOS tube MP3, the grid electrode of the second MOS tube MP2 and the grid electrode of the fifth MOS tube MP5, and the grid electrode of the third MOS tube MP3 and the grid electrode of the fourth MOS tube MP4 are connected with the high side ground.
The second end of the RS trigger is connected with the second end of the linear voltage stabilizer, the third end of the RS trigger is connected with the first end of the high-side output driving circuit, and the fourth end of the RS trigger is connected with the high-side ground;
the second end of the high-side output driving circuit is connected with the second end of the linear voltage stabilizer, and the grid electrode of the NMOS tube in the GaN power device outside the third end of the high-side output driving circuit;
the first end of the second capacitor is connected with the second end of the linear voltage stabilizer, and the second end of the second capacitor is connected with the high-side ground.
A second embodiment of the present application provides a high-side power supply method for a half-bridge gallium nitride gate driver, the method being implemented based on the high-side power supply circuit for a half-bridge gallium nitride gate driver described above, the method comprising:
the control end sends out a low-voltage control signal;
the low-voltage level shift circuit converts the low-voltage initial control signal into a drive control signal of 0-VIN potential; the control signal of the unconverted low voltage is a control signal of 0-5V.
The drive control signal is applied to the grid electrode of the switch PMOS tube through the drive circuit, and the PMOS tube is turned on or turned off according to the potential control signal;
the voltage state of each part of the circuit is shown in fig. 3, when the high-side ground is affected by negative overshoot, the switch PMOS tube is kept closed until the high-side ground is restored to the positive level, so that the device is effectively prevented from being damaged due to overvoltage.
When the switch PMOS tube is conducted, the power supply VIN passes through the high-voltage bootstrap diode D BST1 To bootstrap capacitor C BST Charging; bootstrap capacitor C BST The charge stored thereon is used to power a linear voltage regulator. The first power supply channel in the three-channel integrated bootstrap circuit in this embodiment is that the power supply passes through the switch PMOS and the high-voltage bootstrap diode D BST1 To bootstrap capacitor C BST The charge stored by the bootstrap capacitor provides a power input to the linear voltage regulator.
When the switch PMOS tube is turned off, the charged bootstrap capacitor C BST Supplying power to the linear voltage stabilizer;
the linear voltage regulator generates a voltage-stabilizing output to the second capacitor C HB Charging; the second path is the regulated output generated by the linear voltage regulator to the capacitor C HB ，C HB Meanwhile, the output capacitor of the LDO is also used as an output capacitor of the LDO;
charged second capacitor C HB Providing a first high-side power supply HB to the RS flip-flop and the high-side output driving circuit;
the second power supply VS passes through the high-voltage diode D BST2 Providing a second high-voltage side power supply VB to the high-voltage level shift circuit; the triode Q1 in a diode connection mode realizes unidirectional conduction from the first high-voltage side power supply HB to the second high-voltage side power supply VB; i.e. the third path.
At this time, the voltage obtained by the source of the first MOS transistor MP1, the source of the second MOS transistor MP2, the source of the fifth MOS transistor MP5, and the source of the sixth MOS transistor MP6 shown in fig. 2 is the voltage of the second high-side power supply VB.
Turning the first-stage high-voltage side circuit of the high-voltage level shift circuit to a threshold value V th The voltage minimum value associated with the level shift output is associated with only the second high-side power supply VB; namely, a node A, B node after level displacement in the level displacement module is only connected with a PMOS device of a later stage, so that the turnover threshold value of the node A, B node is only related to a high-voltage side power supply; A. the node B is the output terminal.
The power supply voltage of the half-bridge gallium nitride gate driver is obtained and output through the RS trigger and the high-side output driving circuit.
The bootstrap clamping voltage stabilizing circuit keeps the voltage difference between the high-side power supply HB and the high-side ground HS to be constant 5V through the voltage stabilizing function of the linear voltage stabilizer, thereby realizing the clamping protection of the grid electrode of the high-side GaN device. The HS negative bias voltage capability lifting circuit adopts a three-channel integrated bootstrap technology to supply power, so that the power supply of the level shift circuit is prevented from being reduced along with the change of HS, and the HS negative bias voltage capability of the level shift circuit is improved.
Although the steps are described in the above-described sequential order in the above-described embodiments, it will be appreciated by those skilled in the art that in order to achieve the effects of the present embodiments, the steps need not be performed in such order, and may be performed simultaneously (in parallel) or in reverse order, and such simple variations are within the scope of the present application.
It will be clear to those skilled in the art that, for convenience and brevity of description, the specific working process of the system described above and the related description may refer to the corresponding process in the foregoing method embodiment, which is not repeated here.
It will be clearly understood by those skilled in the art that, for convenience and brevity of description, the specific working process of the storage device and the processing device described above and the related description may refer to the corresponding process in the foregoing method embodiment, which is not repeated herein.
Those of skill in the art will appreciate that the modules, method steps of the examples described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both.
The terms "first," "second," and the like, are used for distinguishing between similar objects and not for describing a particular sequential or chronological order.
The terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus/apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus/apparatus.
Thus far, the technical solution of the present application has been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of protection of the present application is not limited to these specific embodiments. Equivalent modifications and substitutions for related technical features may be made by those skilled in the art without departing from the principles of the present application, and such modifications and substitutions will be within the scope of the present application.

Claims (6)

1. A high side power supply circuit for a half-bridge gallium nitride gate driver, the circuit comprising: the bootstrap clamp voltage stabilizing circuit and the HS negative bias voltage capability lifting circuit are sequentially connected;
the bootstrap clamp voltage stabilizing circuit includes: low voltage level shift circuit, driving circuit, switch PMOS tube, high voltage bootstrap circuitPolar tube D BST1 And a linear voltage regulator;
the HS-negative bias power boost circuit includes: bootstrap capacitor C BST The three-channel integrated bootstrap sub-circuit, the high-voltage level shift circuit, the RS trigger and the high-side output driving circuit;
the bootstrap clamp voltage stabilizing circuit is connected with the high-voltage bootstrap diode D through the high-voltage bootstrap diode D BST1 Simultaneously connected to the bootstrap capacitor C BST And a first end of the linear voltage regulator;
the second end of the linear voltage stabilizer is connected with the three-channel integrated bootstrap sub-circuit of the HS-negative bias voltage capability lifting circuit.
2. The high-side power supply circuit for a half-bridge gallium nitride gate driver of claim 1, wherein the bootstrap clamp voltage regulator circuit specifically comprises:
the low-voltage level displacement circuit comprises a first input end, a second input end and an output end of the low-voltage level displacement circuit, wherein the first input end is used for receiving a low-side input signal, the second input end is used for receiving a fault protection signal, and the output end of the low-voltage level displacement circuit is connected with the input end of the driving circuit;
the output end of the driving circuit is connected with the grid electrode of the switch PMOS tube;
a source electrode of the switch PMOS tube is connected with a low-voltage power supply, and a drain electrode of the switch PMOS tube is connected with the high-voltage bootstrap diode D BST1 Is provided;
high-voltage bootstrap diode D BST1 The output end of (a) is connected to a first common node which is respectively connected with the linear voltage stabilizer and the bootstrap capacitor C BST Is provided.
3. The high side power supply circuit for a half-bridge gallium nitride gate driver of claim 1, wherein the HS negative bias capability boosting circuit specifically comprises:
the three-channel integrated bootstrap sub-circuit comprises a high-voltage diode D BST2 A transistor Q1 and a second capacitor; the input end of the high-voltage diode is connected with a second power supply VS, and the high-voltage diode D BST2 The output end of the transistor Q1 is connected with a first common node which is connected with the first end of the high-voltage level displacement circuit; the collector and the base of the triode Q1 are connected with the second end of the linear voltage stabilizer;
the first end of the high-voltage level displacement circuit is connected with the second common node, the first output end of the high-voltage level displacement circuit is connected with the first end of the RS trigger, and the second output end of the high-voltage level displacement circuit is connected with the high-side ground;
the second end of the RS trigger is connected with the second end of the linear voltage stabilizer, the third end of the RS trigger is connected with the first end of the high-side output driving circuit, and the fourth end of the RS trigger is connected with the high-side ground;
the second end of the high-side output driving circuit is connected with the second end of the linear voltage stabilizer, and the grid electrode of the NMOS tube in the GaN power device outside the third end of the high-side output driving circuit;
the first end of the second capacitor is connected with the second end of the linear voltage stabilizer, and the second end of the second capacitor is connected with the high-side ground.
4. A high side power supply circuit for a half bridge gallium nitride gate driver according to claim 3, wherein the transistor Q1 is implemented with bipolar transistors.
5. A high side power supply circuit for a half bridge gallium nitride gate driver according to claim 3, wherein the high voltage level shift circuit comprises:
the first MOS tube MP1, the second MOS tube MP2, the third MOS tube MP3, the fourth MOS tube MP4, the fifth MOS tube MP5 and the sixth MOS tube MP6;
the source electrode of the first MOS tube MP1, the source electrode of the second MOS tube MP2, the source electrode of the fifth MOS tube MP5 and the source electrode of the sixth MOS tube MP6 are connected with the emitter electrode of the triode Q1, the grid electrode of the first MOS tube MP1 is simultaneously interconnected with the drain electrode of the second MOS tube MP2, the source electrode of the fourth MOS tube MP4 and the grid electrode of the sixth MOS tube MP6, the drain electrode of the first MOS tube MP1 is simultaneously interconnected with the source electrode of the third MOS tube MP3, the grid electrode of the second MOS tube MP2 and the grid electrode of the fifth MOS tube MP5, and the grid electrode of the third MOS tube MP3 and the grid electrode of the fourth MOS tube MP4 are connected with the high side ground.
6. A high-side power supply method for a half-bridge gallium nitride gate driver, characterized in that the method is implemented based on the high-side power supply circuit for a half-bridge gallium nitride gate driver as recited in any one of claims 1 to 5, the method comprising:
the control end sends out a low-voltage control signal;
the low-voltage level shift circuit converts the low-voltage initial control signal into a drive control signal of 0-VIN potential;
the drive control signal is applied to the grid electrode of the switch PMOS tube through the drive circuit, and the PMOS tube is turned on or turned off according to the potential control signal;
when the switch PMOS tube is conducted, the power supply passes through the high-voltage bootstrap diode D BST1 To bootstrap capacitor C BST Charging;
when the switch PMOS tube is turned off, the charged bootstrap capacitor C BST Supplying power to the linear voltage stabilizer;
the linear voltage regulator generates a voltage-stabilizing output to the second capacitor C HB Charging;
charged second capacitor C HB Providing a first high-side power supply HB to the RS flip-flop and the high-side output driving circuit;
the second power supply VS passes through the high-voltage diode D BST2 Providing a second high-voltage side power supply VB to the high-voltage level shift circuit; the triode Q1 is used for realizing unidirectional conduction from the first high-voltage side power supply HB to the second high-voltage side power supply VB;
turning the first-stage high-voltage side circuit of the high-voltage level shift circuit to a threshold value V th The voltage minimum value associated with the level shift output is associated with only the second high-side power supply VB;
the power supply voltage of the half-bridge gallium nitride gate driver is obtained and output through the RS trigger and the high-side output driving circuit.
CN202310506138.8A 2023-05-06 2023-05-06 High-side power supply circuit and power supply method for half-bridge gallium nitride gate driver Pending CN116937946A (en)

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Application Number Priority Date Filing Date Title
CN202310506138.8A CN116937946A (en) 2023-05-06 2023-05-06 High-side power supply circuit and power supply method for half-bridge gallium nitride gate driver

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Application Number Priority Date Filing Date Title
CN202310506138.8A CN116937946A (en) 2023-05-06 2023-05-06 High-side power supply circuit and power supply method for half-bridge gallium nitride gate driver

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CN116937946A true CN116937946A (en) 2023-10-24

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