CN116937310A - Wavelength tunable mid-infrared laser - Google Patents
Wavelength tunable mid-infrared laser Download PDFInfo
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- CN116937310A CN116937310A CN202311072568.XA CN202311072568A CN116937310A CN 116937310 A CN116937310 A CN 116937310A CN 202311072568 A CN202311072568 A CN 202311072568A CN 116937310 A CN116937310 A CN 116937310A
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000004476 mid-IR spectroscopy Methods 0.000 description 2
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- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
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- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1068—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using an acousto-optical device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0057—Temporal shaping, e.g. pulse compression, frequency chirping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0071—Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/1083—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using parametric generation
Abstract
The application provides a wavelength-tunable mid-infrared laser, which comprises the following components in sequence along the light transmission direction: the all-solid-state multi-wavelength laser is used for outputting short-wave infrared pulse lasers with various different wavelengths; the device comprises an etalon component, a laser beam source and a laser beam source, wherein the etalon component is provided with a rotation angle and is used for selectively outputting short-wave infrared pulse laser; the coupling module is used for carrying out beam shaping on the short-wave infrared pulse laser; the first acousto-optic deflection assembly is used for changing the transmission direction of the short-wave infrared pulse laser and injecting the short-wave infrared pulse laser into the optical parametric oscillator; the optical parametric oscillator is used for absorbing the short-wave infrared pulse laser and outputting a plurality of middle infrared pulse lasers with different wavelengths; and the second optical deflection assembly is used for synchronously deflecting the middle infrared pulse laser and realizing the coaxial output of the common aperture of the middle infrared pulse laser. The mid-infrared laser output by the mid-infrared laser has the advantages of wide spectrum coverage range, fast wavelength switching, high repetition frequency, encodable wavelength, coaxial output of common aperture and the like.
Description
Technical Field
The application relates to the technical field of lasers, in particular to a middle infrared laser with tunable wavelength.
Background
The mid-infrared laser is positioned in an atmospheric transmission window, and has very wide application prospect in various fields such as laser medical treatment, environmental monitoring, laser radar, chemical remote sensing, infrared countermeasure and the like. The wavelength-tunable mid-infrared laser means that the wavelength control unit of the mid-infrared laser is adjusted according to the requirement, so that the output wavelength is adjustable between 3 and 5 microns.
Currently, in the research of tunable mid-infrared lasers, an infrared laser based on a periodically poled lithium niobate crystal (PPLN crystal) is one of the important points of research. As shown in fig. 1, a mid-infrared laser in the prior art includes a laser pump source 100, a first coupling system 101, a laser gain crystal 102, a second coupling system 103, a first resonator mirror 104, a periodically poled lithium magnesium oxide doped niobate crystal (MgO: PPLN crystal) 105, a second resonator 106, and a dichroic mirror 107 arranged along an optical path; the main working principle is as follows: the laser pump source 100 excites the laser gain crystal 102 to generate 1064nm continuous laser, and the 1064nm continuous laser is used as input light, and the laser pump passes through multi-period MgO: the PPLN crystal 105 performs nonlinear frequency conversion to output a wavelength-tunable signal laser and an idler laser.
However, the existing mid-infrared lasers still have a number of disadvantages:
firstly, wavelength switching of multi-wavelength middle infrared laser output by a laser is realized by translating a PPLN crystal and adjusting the temperature of the PPLN crystal, so that the precision of a temperature control module of an optical parametric oscillator is required to be high; in addition, in the light transmission process, the crystal damage is easily caused by the translation of the PPLN crystal, and the output quality of laser is affected;
second, the output laser is continuous laser, resulting in extremely low peak power; the continuous laser is required to switch the wavelength of the middle infrared laser in a mechanical mode, so that the tuning speed is low, and the detuning of a resonant cavity and the deterioration of the beam quality in the middle infrared laser are extremely easy to cause;
third, the mid-infrared laser outputs mid-infrared lasers with various different wavelengths without outputting on different light paths, which limits the application of multi-wavelength mid-infrared lasers.
Disclosure of Invention
Aiming at the defects of the prior art, the application provides a middle infrared laser with tunable wavelength, which solves the problems of high accuracy required by a temperature control module, easy damage caused by crystal movement, low wavelength switching speed, narrow tuning spectrum range and the like.
The application provides a wavelength-tunable mid-infrared laser, which comprises the following components in sequence along the light transmission direction:
the all-solid-state multi-wavelength laser is used for outputting short-wave infrared pulse lasers with various different wavelengths; the all-solid-state multi-wavelength laser comprises an etalon component, a laser beam source and a laser beam source, wherein the all-solid-state multi-wavelength laser comprises a rotation angle and is used for selectively outputting the short-wave infrared pulse laser;
the coupling module is used for carrying out beam shaping on the short-wave infrared pulse laser;
the first acousto-optic deflection assembly is used for changing the transmission direction of the short-wave infrared pulse laser and injecting the short-wave infrared pulse laser into the optical parametric oscillator;
the optical parametric oscillator is used for absorbing the short-wave infrared pulse laser and outputting a plurality of middle infrared pulse lasers with different wavelengths;
and the second optical deflection assembly is used for synchronously deflecting the middle infrared pulse laser to realize coaxial output of a common aperture of the middle infrared pulse laser.
Further, the all-solid-state multi-wavelength laser further includes: the laser gain crystal, the polaroid, the acousto-optic Q-switch crystal and the second resonant cavity mirror;
and the pumping source is arranged on the side surface of the laser gain crystal, the acousto-optic driver is connected with the acousto-optic Q-switched crystal, and the signal generator is connected with the acousto-optic driver.
Further, the etalon component is arranged between the acousto-optic Q-switched crystal and the second resonant cavity mirror.
Further, the etalon assembly includes an etalon of one or more different specification parameters.
Further, the first acousto-optic deflection assembly comprises a first acousto-optic deflector and a second acousto-optic deflector which are transparent in a near infrared band and are sequentially arranged along the light transmission direction;
the second acousto-optic deflection assembly includes a third acousto-optic deflector and a fourth acousto-optic deflector disposed in the middle infrared wave Duan Tongguang in order along the light transmission direction.
Further, the mid-infrared laser also includes an angle rotator for controlling the angle of rotation of the etalon assembly.
Further, the etalon assembly is disposed above the angle rotator.
Further, the mid-infrared laser also comprises a control module for generating corresponding control signals and transmitting the control signals to the angle rotator, the first acousto-optic deflection assembly and the second acousto-optic deflection assembly at the same time.
Further, the optical parametric oscillator comprises a third resonant cavity mirror, a nonlinear crystal, a temperature control module and a fourth resonant cavity mirror.
Further, the coupling module includes a negative lens and a positive lens.
In general, by means of the technical solution conceived by the present application, the following beneficial effects can be obtained compared with the prior art:
(1) The application provides a wavelength-tunable mid-infrared laser, which does not need to move the position of a nonlinear crystal and does not need a high-precision temperature control module, and only deflects the angle of pulse laser by rotating the angle of an etalon and utilizing a plurality of acousto-optic deflectors, so that not only is the crystal damage caused by crystal movement avoided, but also the output mid-infrared pulse laser with different wavelengths can be switched at a high speed, the pulse repetition frequency is high, the wavelength tuning speed is high, the tuning precision can reach more than hundred kilohertz compared with the mode of mechanical switching and temperature control, and the damage to the laser crystal is small.
(2) The application provides a wavelength-tunable mid-infrared laser, which uses the laser output by an all-solid-state multi-wavelength laser as pulse laser, avoids the subsequent output of continuous laser and solves the problem of low peak power; in addition, as the output laser is pulse laser and a plurality of acousto-optic deflectors are utilized, the mid-wave infrared laser with various wavelengths can be coaxially output by the common aperture, and the application range of the mid-wave infrared pulse laser with various wavelengths is greatly expanded.
(3) The application provides a wavelength-tunable mid-infrared laser, which realizes the spectrum information coding of mid-infrared pulse laser by performing time sequence coding through a control module, thereby greatly increasing the practicability of the mid-infrared pulse laser.
In a word, the application provides the intermediate infrared laser with tunable wavelength, which has the advantages of low temperature control on the crystal, difficult damage to the crystal, high pulse repetition frequency, high wavelength tuning speed, wide spectrum range, high peak power, coaxial output of a common aperture and the like, and has extremely important significance in expanding the practical application range of the intermediate infrared laser.
Drawings
In order to more clearly illustrate the application or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a mid-IR laser of the prior art;
FIG. 2 is a schematic diagram of a wavelength tunable mid-IR laser according to the present application;
FIG. 3 is a signal timing diagram I of an angle controller, a first acousto-optic deflector, a second acousto-optic deflector, a third acousto-optic deflector and a fourth acousto-optic deflector of a wavelength tunable mid-infrared laser and an output laser pulse timing diagram I provided by the application;
fig. 4 is a signal timing diagram two of an angle controller, a first acousto-optic deflector, a second acousto-optic deflector, a third acousto-optic deflector and a fourth acousto-optic deflector of a wavelength tunable mid-infrared laser and an output laser pulse timing diagram two provided by the application;
fig. 5 is a signal timing diagram three of an angle controller, a first acousto-optic deflector, a second acousto-optic deflector, a third acousto-optic deflector and a fourth acousto-optic deflector of a wavelength tunable mid-infrared laser and an output laser pulse timing diagram three provided by the application;
100-a laser pump source; 101-a first coupling system; 102-a laser gain crystal; 103-a second coupling system; 104-a first resonant cavity mirror; 105-periodically poled magnesium oxide doped lithium niobate crystal (MgO: PPLN crystal); 106-a second resonant cavity; 107-dichroic mirror;
1-a first resonant cavity mirror; 2-laser gain crystal; 3-a pump source; 4-polarizer; 5-acousto-optic Q-switched crystals; 6-acousto-optic driver; 7-a signal generator; 8-an etalon assembly; 9-an angle controller; 10-a second resonant cavity mirror; 11-a coupling module; 12-a first acousto-optic deflector; 13-a control module; 14-a second acoustic deflector; 15-a third resonant cavity mirror; 16-nonlinear crystals; 17-a temperature control module; 18-fourth resonant cavity mirrors; 19-a third acousto-optic deflector; 20-fourth acousto-optic deflector.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be clearly and completely described below with reference to the accompanying drawings and examples of the present application, and it is apparent that the described examples are some, but not all, examples of the present application. In addition, the technical features of the respective embodiments described below may be combined with each other as long as they do not collide with each other.
It should be noted that in the description of embodiments of the present application, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, or circuit that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, or circuit. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method or circuit comprising such elements.
The application provides a wavelength-tunable mid-infrared laser, which comprises an all-solid-state multi-wavelength laser, a coupling module, a first acousto-optic deflection assembly, an optical parametric oscillator and a second acousto-optic deflection assembly, wherein the all-solid-state multi-wavelength laser, the coupling module, the first acousto-optic deflection assembly, the optical parametric oscillator and the second acousto-optic deflection assembly are sequentially arranged along the light transmission direction.
The all-solid-state multi-wavelength laser is used for outputting short-wave infrared pulse lasers with various different wavelengths, and the wavelength range is 1-2 mu m; the all-solid-state multi-wavelength laser comprises an etalon assembly 8, has a rotation angle and comprises one or more etalons with different specification parameters, and is used for selectively outputting short-wave infrared pulse laser.
As an embodiment of the present application, as shown in fig. 2, the all-solid-state multi-wavelength laser further includes a first resonant cavity mirror 1, a laser gain crystal 2, a polarizer 4, an acousto-optic Q-tuning crystal 5, and a second resonant cavity mirror 10 sequentially arranged along the light transmission direction; and a pump source 3 provided on the side of the laser gain crystal, an acousto-optic driver 6 connected to the acousto-optic Q-switching crystal 5, and a signal generator 7 connected to the acousto-optic driver 6.
The first resonant cavity mirror 1 is used as a reflecting mirror of a resonant cavity and is used for guaranteeing the gain effect of laser; the laser gain crystal 2 is doped with rare earth ions and has two or more wavelength emission sections, and is used for absorbing the laser energy of the pumping source 3 and outputting short-wave infrared pulse laser; the pumping source 3 is used for outputting near infrared pulse laser and providing pumping laser energy for the laser gain crystal 2; the polaroid 4 is used for controlling the polarization characteristics of a resonant cavity formed in the pump source 3 so as to ensure that the output laser is polarized laser; the acousto-optic Q-switched crystal 5 is used for generating controllable specific loss in the resonant cavity so as to ensure complete turn-off of the resonant cavity; the acousto-optic driver 6 is used for receiving the pulse signal generated by the signal generator 7 and generating a corresponding radio frequency signal so as to realize driving control of the acousto-optic Q-switched crystal 5; the signal generator 7 is used for generating pulse signals; the second resonator mirror 10 is used as an output mirror of the resonator, and is plated with a partial reflection film matched with the laser gain crystal 2 in emission peak wavelength, so as to ensure the resonance gain of laser.
Further, an etalon assembly 8 is disposed between the acousto-optic Q-switched crystal 5 and the second resonant cavity mirror 10, and includes one or more etalons of different specification parameters for selectively outputting short wave infrared pulse laser light within the cavity.
As an embodiment of the application, the mid-infrared laser further comprises an angle rotator 9 for controlling the rotation angle of the etalon assembly 8. It should be noted that the angle controller is a high-precision electronic control angle controller, and can respectively control one or more etalons to rotate by different angles.
Further, an etalon assembly 8 is arranged above the angle rotator 9; more specifically, the etalon assembly 8 comprises only one etalon, 1mm thick, disposed above the angle rotator 9.
The coupling module 11 is used for carrying out beam shaping on the short-wave infrared pulse laser; as an embodiment of the present application, the coupling module 11 includes a negative lens and a positive lens, and condenses and collimates the output short-wave infrared pulse laser light.
And the first acousto-optic deflection assembly is used for changing the transmission direction of the short-wave infrared pulse laser and injecting the short-wave infrared pulse laser into the optical parametric oscillator.
That is, the first acousto-optic deflection component deflects the received short-wave infrared pulse laser beams with different wavelengths in a pointing manner, so that the short-wave infrared pulse laser beams with different wavelengths are injected into different polarization periods corresponding to the nonlinear crystal 16 in the optical parametric oscillator. As an embodiment of the present application, the first acousto-optic deflection unit includes a first acousto-optic deflector 12 and a second acousto-optic deflector 14 that transmit light in the near infrared band and are disposed in order along the light transmission direction.
The optical parametric oscillator is used for absorbing the short-wave infrared pulse laser, generating optical parametric oscillation and outputting a plurality of intermediate infrared pulse lasers with different wavelengths.
As an embodiment of the present application, the optical parametric oscillator includes a third resonant cavity mirror 15, a nonlinear crystal 16, a temperature control module 17, and a fourth resonant cavity mirror 18.
It should be noted that, the third resonant cavity mirror 15 is coated with an antireflection film of all the wavelength bands of the all solid-state multi-wavelength laser output, a high reflection film corresponding to the signal light wavelength, and a high reflection film corresponding to the idler frequency light wavelength; nonlinear crystal 16 is multicycle MgO: the PPLN crystal, two light-passing surfaces are plated with an antireflection film of all wave bands output by the all-solid-state multi-wavelength laser, an antireflection film corresponding to the signal light wavelength and an antireflection film corresponding to the idler frequency light wavelength; the temperature control module 17 is used for controlling the temperature of the nonlinear crystal 16, and the temperature control precision is 0.1K; the fourth resonant cavity mirror 18 is coated with a high reflection film of all the solid-state multi-wavelength laser output all the wave bands, a high reflection film corresponding to the signal light wavelength and an antireflection film corresponding to the idler light wavelength.
And the second optical deflection assembly is used for synchronously deflecting the middle infrared pulse laser and realizing the coaxial output of the common aperture of the middle infrared pulse laser. As an embodiment of the present application, the second acoustic deflection unit includes the third acoustic deflector 19 and the fourth acoustic deflector 20 disposed in the middle infrared wave Duan Tongguang in this order in the light transmission direction.
As an embodiment of the present application, the mid-infrared laser further includes a control module 13 for generating corresponding control signals and transmitting the control signals to the angle rotator 8, the first acousto-optic deflection assembly and the second acousto-optic deflection assembly simultaneously.
That is, the control module 13 is connected to the angle controller 9 and the first, second, third, and fourth acousto-optic deflectors 12, 14, 19, and 20, respectively. The control module 13 is configured to generate corresponding control signals, and synchronously transmit the control signals to the angle controller 9, the first acousto-optic deflector 12, the second acousto-optic deflector 14, the third acousto-optic deflector 19, and the fourth acousto-optic deflector 20, so as to accurately and synchronously control the angle of the etalon assembly 8 and the frequency of the sound field on each acousto-optic deflector, so that short wave infrared pulse lasers with different wavelengths are injected into different polarization periods corresponding to the nonlinear crystal 16, thereby forming optical parametric oscillation, and finally realizing high-speed wavelength switching, high repetition frequency, wide spectral range, wavelength encoding, and coaxial output of a common aperture of the mid-infrared pulse laser.
When the intermediate infrared laser provided by the application works normally, the all-solid-state multi-wavelength laser outputs high-repetition frequency pumping pulse laser in an acousto-optic Q-switching mode, short-wave infrared pulse laser with different wavelengths is selectively output through changing the angle of the etalon component 8, different voltages are automatically adjusted based on different wavelengths after passing through the first acousto-optic deflection component, so that the short-wave infrared pulse laser forms different deflection angles, the different deflection angles are input into different periods corresponding to the nonlinear crystal 16, optical parametric oscillation is formed, the intermediate infrared pulse laser with different wavelengths is output, and finally the intermediate infrared pulse laser with different wavelengths realizes coaxial output of a common aperture through the first acousto-optic deflection component.
As shown in fig. 2, as a preferred embodiment of the present application, the mid-infrared laser includes a first resonant cavity mirror 1, a laser gain crystal 2, a pump source 3, a polarizing plate 4, an acousto-optic Q crystal 5, an acousto-optic driver 6, a signal generator 7, an etalon assembly 8, a high precision electronic control angle controller 9, a second resonant cavity mirror 10, a coupling module 11, a first acousto-optic deflector 12, a control module 13, a second acoustic optical deflector 14, a first resonant cavity mirror 15, a nonlinear crystal 16, a temperature control module 17, a second resonant cavity mirror 18, a third acousto-optic deflector 19, and a fourth acousto-optic deflector 20, which are sequentially arranged.
Wherein, the first resonant cavity mirror 1 is plated with an antireflection film of 800-816 nm and has a transmittance of more than 98%, a high reflection film of 1319nm and has a reflectance of more than 99%, and a high reflection film of 1064nm and has a reflectance of more than 99%.
The laser gain crystal 2 is neodymium-doped yttrium aluminum garnet crystal, the two sides of the crystal are plated with 800-816 nm antireflection film, the transmittance is greater than 98%, the transmittance of 1319nm antireflection film is greater than 98%, and the transmittance of 1064nm antireflection film is greater than 98%.
Pump source 3 generates pump laser light with a center wavelength of 808 nm.
The polarizing plate 4 may be any one of a dichroic polarizing plate, a thin film polarizing plate, a reflective polarizing plate, a birefringent polarizing plate, and the like.
The acousto-optic Q-switched crystal 5 can transmit light in a wave band of 1-1.7 mu m.
The acousto-optic driver 6 is connected with the acousto-optic Q-switching crystal 5.
The signal generator 7 is connected to the acousto-optic driver 6.
The etalon assembly 8 comprises an etalon having a thickness of 1mm and is placed on the angle controller 9.
The angle controller 9 is a high-precision electric control angle controller. The high-precision electronic control angle controller is used for rapidly rotating the angle of the etalon component and realizing rapid switching of 1064nm/1319nm wavelength laser.
The second resonator mirror 10 is coated with a high reflection film of 800 to 816nm laser light and has a reflectance of more than 99%, a partial reflection film of 1064nm laser light and has a transmittance of 15%, and a partial reflection film of 1319nm laser light and has a transmittance of 10%.
The coupling module 11 comprises a negative lens and a positive lens, and is used for carrying out beam shrinking on the output short-wave infrared pulse laser and collimating the output.
The first acousto-optic deflector 12 and the second acousto-optic deflector 14 are all in 1-2.1 μm wave band light transmission, and are used for synchronously deflecting the directions of the output 1064nm/1319nm wavelength laser, so that the laser after each deflection can be injected into different polarization periods corresponding to the nonlinear crystal (16).
The third acousto-optic deflector 19 and the fourth acousto-optic deflector 20 are all in 3.1-4.9 μm wave band light transmission, and are used for synchronously deflecting the mid-infrared pulse lasers with different wavelengths output by the optical parametric oscillator to realize coaxial output of a common aperture.
The control module 13 generates corresponding control signals and synchronously loads the electrical signals onto the angle controller 9, the first acousto-optic deflector 12, the second acousto-optic deflector 14, the third acousto-optic deflector 19 and the fourth acousto-optic deflector 20.
One side of the third resonant cavity mirror 15 is plated with 1064nm and 1319nm antireflection films, the transmittance is more than 98%, the high-reflection film with the transmittance of 1.3-2.1 μm is more than 99%, and the high-reflection film with the reflectance of 3-5 μm is more than 99%.
Nonlinear crystal 16 is multicycle MgO: PPLN crystals with polarization periods of 29 μm, 30 μm and 31 μm, respectively; the light-transmitting surface is plated with an antireflection film with the thickness of 1.0-2.1 mu m and the transmittance is more than 98 percent, and the antireflection film with the thickness of 3-5 mu m and the transmittance is more than 98 percent.
The temperature set by the temperature control module 17 is 330K.
The fourth resonator mirror 18 is plated with high reflection films of 1064nm and 1319nm and has a reflectance of more than 99%, a high reflection film of 1.3 to 2.1 μm and a reflectance of more than 99%, and an antireflection film of 3 to 5 μm and a transmittance of more than 98%.
When the middle infrared laser works, the pumping source 3 emits light, the pumping light excites the laser gain crystal 2 to generate stimulated radiation, laser with the central wavelength of 1064nm and 1319nm is output, the signal generator 7 loads pulse signals on the acousto-optic driver 6, the acousto-optic driver 6 loads radio frequency signals on the acousto-optic Q-switched crystal 5 to generate specific loss in a cavity, thereby generating high-frequency pulse laser with the central wavelength of 1064nm and 1319nm,
the control module 13 sends out different control signals, and the signals synchronously loaded to the first acousto-optic deflector 12, the second acousto-optic deflector 14, the third acousto-optic deflector 19 and the fourth acousto-optic deflector 20 are also different, so that the corresponding control is also different.
As shown in fig. 3, when the control module 13 sends out the first control signal, the angle controller 9 receives the first control signal, controls the rotation angle of the etalon assembly 8, and increases the loss in the 1064nm laser cavity, so that only 1319nm pulse laser outputs.
The light beam is then condensed and collimated by the coupling module 11.
Meanwhile, the internal driving of the first acousto-optic deflector 12 and the second acousto-optic deflector 14 synchronously receives the corresponding first control signals, and the internal driving respectively generates radio frequency signals with corresponding frequencies: v11, v12, v13, v14, v15 and v16, and converted into ultrasonic waves with specific frequencies, and respectively loaded into the internal crystals of the first acousto-optic deflector 12 and the second acousto-optic deflector 14, so that 1319nm pulse laser is deflected at different angles under corresponding radio frequency signals.
Subsequently, 1319nm pulse lasers deflected at different angles are respectively injected with MgO: in different polarization periods corresponding to the PPLN crystal 14, optical parametric oscillation is generated, so that mid-infrared pulse lasers with the wavelengths of 4.78 mu m, 4.51 mu m and 4.27 mu m are output.
Meanwhile, the internal driving of the third acousto-optic deflector 19 and the fourth acousto-optic deflector 20 synchronously receives the corresponding first control signals, and the internal driving respectively generates radio frequency signals with corresponding frequencies: v17, v18, v19, v20, v21 and v22, and converts the ultrasonic waves into ultrasonic waves with specific frequencies, and the ultrasonic waves are respectively loaded into internal crystals of the third acousto-optic deflector 19 and the fourth acousto-optic deflector 20 to deflect mid-infrared lasers with the wavelengths of 4.78 mu m, 4.51 mu m and 4.27 mu m, so that the mid-infrared pulse lasers with the wavelengths capable of being switched at high speed and coaxially output by a common aperture are finally realized.
As shown in fig. 4, when the control module 13 sends out the second control signal, the angle controller 9 receives the second control signal, controls the rotation angle of the etalon assembly 8, and increases the loss in the 1319nm laser cavity, so that only 1064nm pulse laser light is output.
The light beam is then condensed and collimated by the coupling module 11.
Meanwhile, the internal driving of the first acousto-optic deflector 12 and the second acousto-optic deflector 14 synchronously receives the corresponding second control signals, and the internal driving respectively generates radio frequency signals with corresponding frequencies: v21, v22, v23, v24, v25 and v26, and converted into ultrasonic waves with specific frequencies, and respectively loaded into the internal crystals of the first acousto-optic deflector 12 and the second acousto-optic deflector 14, so that 1064nm pulse laser is deflected at different angles under corresponding radio frequency signals.
Subsequently, 1064nm pulse laser deflected at different angles was injected into MgO: in different polarization periods corresponding to the PPLN crystal 14, optical parametric oscillation is generated, so that mid-infrared pulse lasers with the wavelengths of 3.97 mu m, 3.62 mu m and 3.20 mu m are output.
Meanwhile, the internal driving of the third acousto-optic deflector 19 and the fourth acousto-optic deflector 20 synchronously receives the corresponding second control signals, and the internal driving respectively generates radio frequency signals with corresponding frequencies: v27, v28, v29, v30, v31 and v32, and converts the ultrasonic waves into ultrasonic waves with specific frequencies, and the ultrasonic waves are respectively loaded into the internal crystals of the third acousto-optic deflector 19 and the fourth acousto-optic deflector 20 to deflect the mid-infrared laser with the wavelengths of 3.97 mu m, 3.62 mu m and 3.20 mu m, so that the mid-infrared pulse laser with the wavelengths capable of being switched at high speed and coaxially output by a common aperture is finally realized.
As shown in fig. 5, by performing time sequence coding control on the first control signal and the second control signal, the mid-infrared pulse laser output with the wavelengths of 3.97 μm, 3.62 μm, 3.20 μm, 4.78 μm, 4.51 μm and 4.27 μm can be realized by repeating the above working principles, which are consistent with the above working principles and are not described in detail here.
In a word, the mid-infrared laser provided by the application does not need a high-precision temperature control module, has small damage to a laser crystal, has the advantages of wide mid-infrared spectrum coverage range, high wavelength switching speed, high repetition frequency, encodable wavelength, coaxial output of a common aperture and the like, and greatly expands the practicability of mid-infrared laser.
It should be noted that, for simplicity of description, the foregoing method embodiments are all described as a series of acts, but it should be understood by those skilled in the art that the present application is not limited by the order of acts described, as some steps may be performed in other orders or concurrently in accordance with the present application. Further, those skilled in the art will also appreciate that the embodiments described in the specification are all preferred embodiments, and that the acts and modules referred to are not necessarily required for the present application.
It should be understood that the embodiments described above are merely illustrative, wherein the elements illustrated as separate elements may or may not be physically separate, and elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present application without undue burden.
The foregoing is merely exemplary embodiments of the present disclosure and is not intended to limit the scope of the present disclosure. That is, equivalent changes and modifications are contemplated by the teachings of this disclosure, which fall within the scope of the present disclosure. Embodiments of the present disclosure will be readily apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a scope and spirit of the disclosure being indicated by the claims.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the application and is not intended to limit the application, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the application are intended to be included within the scope of the application.
Claims (10)
1. A wavelength tunable mid-infrared laser comprising, in order along an optical transmission direction:
the all-solid-state multi-wavelength laser is used for outputting short-wave infrared pulse lasers with various different wavelengths; the all-solid-state multi-wavelength laser comprises an etalon component, a laser beam source and a laser beam source, wherein the all-solid-state multi-wavelength laser comprises a rotation angle and is used for selectively outputting the short-wave infrared pulse laser;
the coupling module is used for carrying out beam shaping on the short-wave infrared pulse laser;
the first acousto-optic deflection assembly is used for changing the transmission direction of the short-wave infrared pulse laser and injecting the short-wave infrared pulse laser into the optical parametric oscillator;
the optical parametric oscillator is used for absorbing the short-wave infrared pulse laser and outputting a plurality of middle infrared pulse lasers with different wavelengths;
and the second optical deflection assembly is used for synchronously deflecting the middle infrared pulse laser to realize coaxial output of a common aperture of the middle infrared pulse laser.
2. A wavelength tunable mid-infrared laser as defined in claim 1, wherein said all-solid-state multi-wavelength laser further comprises, in order along the optical transmission direction: the laser gain crystal, the polaroid, the acousto-optic Q-switch crystal and the second resonant cavity mirror;
and the pumping source is arranged on the side surface of the laser gain crystal, the acousto-optic driver is connected with the acousto-optic Q-switched crystal, and the signal generator is connected with the acousto-optic driver.
3. A wavelength tunable mid-infrared laser as defined in claim 2, wherein said etalon assembly is disposed between said acousto-optic Q crystal and said second resonator mirror.
4. A wavelength tunable mid-infrared laser as defined in claim 1, wherein said etalon assembly comprises one or more etalons of different gauge parameters.
5. A wavelength tunable mid-infrared laser as claimed in any one of claims 1 to 4, wherein said first acousto-optic deflector assembly comprises a first acousto-optic deflector and a second acousto-optic deflector which are optically transmissive in the near-infrared band and are sequentially arranged in the optical transmission direction;
the second acousto-optic deflection assembly includes a third acousto-optic deflector and a fourth acousto-optic deflector disposed in the middle infrared wave Duan Tongguang in order along the light transmission direction.
6. A wavelength tunable mid-infrared laser as defined in any one of claims 1 to 4, further comprising an angle rotator for controlling the angle of rotation of said etalon assembly.
7. A wavelength tunable mid-infrared laser as defined in claim 6, wherein said etalon assembly is disposed above said angular rotator.
8. A wavelength tunable mid-infrared laser as defined in claim 6, further comprising a control module for generating corresponding control signals and simultaneously transmitting to said angle rotator, said first acousto-optic deflection assembly and said second acousto-optic deflection assembly.
9. A wavelength tunable mid-infrared laser as claimed in any one of claims 1 to 4 wherein said optical parametric oscillator comprises a third resonant cavity mirror, a nonlinear crystal, a temperature control module and a fourth resonant cavity mirror.
10. A wavelength tunable mid-infrared laser as defined in claim 1, wherein said coupling module includes a negative lens and a positive lens.
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